Patent application number | Description | Published |
20100009508 | Methods of fabricating stack type capacitors of semiconductor devices - Provided are methods of fabricating capacitors of semiconductor devices, the methods including: forming a lower electrode on a semiconductor substrate, performing a pre-process operation on the lower electrode for suppressing deterioration of the lower electrode during a process, forming a dielectric layer on the lower electrode using a source gas and an ozone gas, and forming an upper electrode on the dielectric layer, wherein the pre-process operation and the forming of the dielectric layer may be performed in one device capable of atomic layer deposition. | 01-14-2010 |
20100240191 | METHOD OF FORMING SEMICONDUCTOR DEVICE HAVING A CAPACITOR - A method of forming a semiconductor device includes forming a lower electrode layer on a substrate, forming a surface oxide layer on the lower electrode layer, partially removing the lower electrode layer to form a lower electrode, removing the surface oxide layer to expose the lower electrode, forming a capacitor dielectric layer on the lower electrode, and forming an upper electrode on the capacitor dielectric layer. | 09-23-2010 |
20120012176 | SOLAR CELL AND METHOD OF MANUFACTURING THE SAME - A solar cell includes a substrate, a doped pattern, a contact layer, and an electrode. The substrate includes a first surface onto which sunlight is incident and a second surface facing the first surface. The doped pattern is formed on the second surface of the substrate and the contact layer is formed on the doped pattern. The electrode is formed on the contact layer and is electrically connected to the doped pattern. Accordingly, a contact resistance between the substrate and the electrode may be decreased, so that the doped pattern and the electrode may be uniformly formed and a power efficiency of the solar cell may be improved. | 01-19-2012 |
20120107997 | METHOD OF MANUFACTURING SOLAR CELL - In a method of manufacturing a solar cell, a first dopant layer is formed on a lower surface of a substrate and a diffusion-preventing layer is formed on an upper surface of the substrate. Then, the first dopant layer is patterned to expose portions of the lower surface of the substrate, and a second dopant layer is formed on the exposed portion of the lower surface of the substrate. A third dopant layer is formed on the diffusion-preventing layer, and the substrate is heated to diffuse dopants from the first, second, and third dopant layers into the substrate, thereby forming semiconductor areas in the substrate. | 05-03-2012 |
20120273040 | Solar Cell and Manufacturing Method Thereof - A method for forming a doped region in a solar cell includes preparing a first and second surface of a substrate, forming a first doped region doped with a first dopant in a part of the first surface, forming a silicon oxide layer on the first surface, the silicon oxide layer including a first silicon oxide layer on the first doped region and having a first thickness, and a second silicon oxide layer on a portion of the first surface undoped by the first dopant and having a second thickness that is less than the first thickness, implanting a second dopant from outside the first surface into the first silicon oxide layer and the second silicon oxide layer, and forming a second doped region adjacent the first doped region by performing heat treatment on the first silicon oxide layer, the second silicon oxide layer, and the substrate. | 11-01-2012 |
20130087192 | PHOTOVOLTAIC DEVICE - A photovoltaic device, and a method of fabricating the same are provided. Here, a base portion and an emitter portion are formed on a surface of a semiconductor substrate. An insulation layer is formed on the base portion and the emitter portion. The insulation layer has a plurality of vias to partially expose the base portion and the emitter portion. A first electrode is formed to contact a region of the emitter portion through at least one of the vias, and a second electrode is formed to contact a region of the base portion through at least another one of the vias. Then, a dicing line is set at a bus electrode portion of the second electrode, and the semiconductor substrate is split into at least two photovoltaic devices at the base portion along the dicing line. | 04-11-2013 |
20130092224 | PHOTOELECTRIC DEVICE - A photoelectric device includes a first semiconductor structure and a second semiconductor structure on a substrate, and the first semiconductor structure includes a different conductivity type from the second semiconductor structure. The photoelectric device also includes a first electrode on the first semiconductor structure and a second electrode on the second semiconductor structure, and an interlayer insulating structure adjacent to the second semiconductor structure. The interlayer insulating structure separates the first semiconductor structure from the second semiconductor structure and separates the first semiconductor structure from the second electrode. | 04-18-2013 |
20130104974 | SOLAR CELL AND MANUFACTURING METHOD THEREOF | 05-02-2013 |
20130112253 | SOLAR CELL - A solar cell including a first conductive type semiconductor substrate; a first intrinsic semiconductor layer on a front surface of the semiconductor substrate; a first conductive type first semiconductor layer on at least one surface of the first intrinsic semiconductor layer; a second conductive type second semiconductor layer on a back surface of the semiconductor substrate; a second intrinsic semiconductor layer between the second semiconductor layer and the semiconductor substrate; a first conductive type third semiconductor layer on the back surface of the semiconductor substrate, the third semiconductor layer being spaced apart from the second semiconductor layer; and a third intrinsic semiconductor layer between the third semiconductor layer and the semiconductor substrate. | 05-09-2013 |
20130125964 | SOLAR CELL AND MANUFACTURING METHOD THEREOF - A solar cell including a crystalline semiconductor substrate having a first conductive type; a first doping layer on a front surface of the substrate and being doped with a first conductive type impurity; a front surface antireflection film on the front surface of the substrate; a back surface antireflection film on a back surface of the substrate; an intrinsic semiconductor layer, an emitter, and a first auxiliary electrode stacked on the back surface antireflection film and the substrate; a second doping layer on the back surface of the substrate and being doped with the first impurity; an insulating film on the substrate and including an opening overlying the second doping layer; a second auxiliary electrode in the opening and overlying the second doping layer; a first electrode on the first auxiliary electrode; and a second electrode on the second auxiliary electrode and being separated from the first electrode. | 05-23-2013 |
20130133729 | SOLAR CELL AND MANUFACTURING METHOD THEREOF - A solar cell includes a semiconductor substrate, a first intrinsic semiconductor layer and a second intrinsic semiconductor layer on the semiconductor substrate, the first intrinsic semiconductor layer and the second intrinsic semiconductor layer being spaced apart from each other, a first conductive semiconductor layer and a second conductive semiconductor layer respectively disposed on the first intrinsic semiconductor layer and the second intrinsic semiconductor layer, and a first electrode and a second electrode, each including a bottom layer on the first conductive semiconductor layer and the second conductive semiconductor layer, respectively, the bottom layer including a transparent conductive oxide, and an intermediate layer on the bottom layer, the intermediate layer being including copper. | 05-30-2013 |
20130228218 | THIN FILM TYPE SOLAR CELL AND FABRICATION METHOD THEREOF - A method of fabricating a solar cell includes forming a doped portion having a first conductive type on a semiconductor substrate, growing an oxide layer on the semiconductor substrate, forming a plurality of recess portions in the oxide layer, further growing the oxide layer on the semiconductor substrate, forming a doped portion having a second conductive type on areas of the semiconductor substrate corresponding to the recess portions, forming a first conductive electrode electrically coupled to the doped portion having the first conductive type, and forming a second conductive electrode on the semiconductor substrate and electrically coupled to the doped portion having the second conductive type, wherein a gap between the doped portions having the first and second conductive types corresponds to a width of the oxide layer formed by further growing the oxide layer. | 09-05-2013 |
20130267059 | METHOD OF MANUFACTURING PHOTOELECTRIC DEVICE - A method of manufacturing a photoelectric device, the method including: forming a first semiconductor layer on a semiconductor substrate through a first ion implantation; forming a second semiconductor layer having an inverted conductive type on a part of the first semiconductor layer through a second ion implantation; and performing thermal processing to restore lattice damage of the semiconductor substrate and activate a dopant into which ion implanted. | 10-10-2013 |
20140137931 | SOLAR CELL AND METHOD OF MANUFACTURING THE SAME - A solar cell having improved electric energy generation efficiency and a method of manufacturing the solar cell. The solar cell includes a substrate, a rear electrode layer on the substrate and comprising a first rear electrode and a second rear electrode spaced from each other, a window electrode layer on the rear electrode layer and comprising a first window electrode electrically coupled to the second rear electrode at a contact region on the second rear electrode, a light-absorbing layer between the rear electrode layer and the window electrode layer, and an insulating layer on a first portion of the second rear electrode, wherein the first portion is between an edge of the second rear electrode facing the first rear electrode and the contact region. | 05-22-2014 |
20140360551 | PHOTOELECTRIC MODULE AND METHOD OF MANUFACTURING THE SAME - A photoelectric module includes a substrate, a first photoelectric conversion unit that is formed on the substrate and has a first light-receiving surface, and a second photoelectric conversion unit that is formed under the substrate and has a second light-receiving surface, wherein a front electrode of the second photoelectric conversion unit has a thickness smaller than that of a front electrode of the first photoelectric conversion unit. Also, the photoelectric module is a dual-side light-receiving photoelectric module having light-receiving surfaces on and under the substrate, and the first and second photoelectric conversion units respectively formed on the upper and lower surfaces of the substrate are differently designed to compensate for an intensity difference of incident light. Methods of manufacturing the dual-side light-receiving photoelectric module are provided. | 12-11-2014 |
20150026599 | PORTABLE TERMINAL AND METHOD FOR CONTROLLING EXTERNAL APPARATUS THEREOF - A portable terminal and a method for controlling an external apparatus thereof are provided. The method for controlling an external apparatus of a portable terminal according to an embodiment of the present disclosure includes display, when an application to perform chatting with a user of another portable terminal is executed, a chatting screen including at least one icon corresponding to an external apparatus, obtaining, when one of the at least one icon is selected, information regarding an external apparatus corresponding to the selected one icon, and transmitting the information regarding the external apparatus to the other portable terminal. | 01-22-2015 |