Patent application number | Description | Published |
20080242030 | METHOD FOR MANUFACTURING FIN TRANSISTOR THAT PREVENTS ETCHING LOSS OF A SPIN-ON-GLASS INSULATION LAYER - A method for manufacturing a fin transistor includes forming a trench by etching a semiconductor substrate. A flowable insulation layer is filled in the trench to form a field insulation layer defining an active region. The portion of the flowable insulation layer coming into contact with a gate forming region is etched so as to protrude the gate forming region in the active region. A protective layer over the semiconductor substrate is formed to fill the portion of the etched flowable insulation layer. The portion of the protective layer formed over the active region is removed to expose the active region of the semiconductor substrate. The exposed active region of the semiconductor substrate is cleaned. The protective layer remaining on the portion of the etched flowable insulation layer is removed. Gates are formed over the protruded gate forming regions in the active region. | 10-02-2008 |
20100035429 | METHOD FOR FABRICATING SEMICONDUCTOR DEVICE - A fabricating method of a polysilicon layer is disclosed which can be applied for fabricating a semiconductor device such as a SRAM and so on. The method for fabricating the semiconductor device includes the steps of: forming a transistor included in the semiconductor device on a semi conductor substrate forming an insulating layer on the transistor; forming contact holes, through which a region of the transistor is exposed, by selectively removing the insulating layer forming a silicon layer in the contact holes forming a metal layer on the insulating layer and the silicon layer; forming a metal suicide layer through heat treatment of the silicon layer and the metal layer; removing the metal layer; forming an amorphous silicon layer on the insulating layer and the metal suicide layer; and forming a polysilicon layer through heat treatment of the amorphous silicon layer | 02-11-2010 |
20110003450 | METHOD FOR MANUFACTURING SEMICONDUTOR DEVICE WITH STRAINED CHANNEL - A method for forming a semiconductor device includes forming a gate pattern over a silicon substrate, forming gate spacers over both sidewalls of the gate pattern, forming a dummy gate spacer over a sidewall of each one of the gate spacers, forming a recess region having inclined sidewalls extending in a direction to a channel region under the gate pattern by recess-etching the silicon substrate, filling the recess region with an epitaxial film, which becomes a source region or a drain region, through a selective epitaxial growth process, and removing the dummy gate spacer. | 01-06-2011 |
20110073940 | SEMICONDUCTOR DEVICE WITH ONE-SIDE-CONTACT AND METHOD FOR FABRICATING THE SAME - A method for fabricating a semiconductor device includes forming a first conductive layer doped with an impurity for forming a cell junction over a semiconductor substrate, forming a second conductive layer over the first conductive layer, forming a plurality of active regions by etching the second conductive layer and the first conductive layer, the plurality of the active regions being separated from one another by trenches, forming a side contact connected to a sidewall of the first conductive layer, and forming a plurality of metal bit lines each connected to the side contact and filling a portion of each trench. | 03-31-2011 |
20110107968 | SEMICONDUCTOR MANUFACTURING APPARATUS - A semiconductor manufacturing apparatus includes: a reaction chamber for providing an airtight process space; a boat for loading/unloading a pair of semiconductor substrates into/from the reaction chamber, wherein the boat includes susceptors and rotary tables to be rotatably supported by a plurality of supporting rollers, each semiconductor substrate being mounted onto each susceptor and each susceptor being mounted onto each rotary table, respectively; heaters, arranged at backsides of the semiconductor substrates, for performing an epitaxial process in the reaction chamber; a process gas nozzle, installed to encircle an upper fringe of the semiconductor substrates; an exhaust gas nozzle, installed to encircle a lower fringe of the semiconductor substrates; and a purge gas nozzle for supplying a purge gas capable of preventing an outer wall of the process gas nozzle from being deposited, wherein the purge gas nozzle is arranged near to the process gas nozzle. | 05-12-2011 |
20110139216 | SOLAR CELL AND METHOD FOR MANUFACTURING SAME - A solar cell and a manufacturing method thereof are disclosed. The solar cell in accordance with the present invention includes a substrate | 06-16-2011 |
20110189843 | PLASMA DOPING METHOD AND METHOD FOR FABRICATING SEMICONDUCTOR DEVICE USING THE SAME - A doping method that forms a doped region at a desired location of a three-dimensional (3D) conductive structure, controls the doping depth and doping dose of the doped region relatively easily, has a shallow doping depth, and prevents a floating body effect. A semiconductor device is fabricated using the same doping method. The method includes, forming a conductive structure having a sidewall, exposing a portion of the sidewall of the conductive structure, and forming a doped region in the exposed portion of the sidewall by performing a plasma doping process. | 08-04-2011 |
20110212591 | METHOD FOR FABRICATING TRANSISTOR OF SEMICONDUCTOR DEVICE - A method for fabricating a transistor of a semiconductor device includes: forming a gate pattern over a substrate; forming a junction region by performing an on implantation process onto the substrate at opposite sides of the gate pattern; performing a solid phase epitaxial (SPE) process on the junction region at a temperature approximately ranging from 770° C. to 850° C.; and performing a rapid thermal annealing (RTA) process on the junction region. | 09-01-2011 |
20120122600 | BILLIARD BALL AND METHOD FOR MANUFACTURING SAME - The present invention relates to a billiard ball, comprising: a main body, the outer surface of which has at least one design groove; a designed member which is arranged in the design groove and which has a design; and a transparent resin which fills the design groove, thereby continuously showing an advertisement design, which has been formed on the billiard ball, during a game of billiards, thus achieving maximized advertising effects. | 05-17-2012 |
20130102118 | SEMICONDUCTOR DEVICE WITH ONE-SIDE-CONTACT AND METHOD FOR FABRICATING THE SAME - A method for fabricating a semiconductor device includes forming a first conductive layer doped with an impurity for forming a cell junction over a semiconductor substrate, forming a second layer over the first conductive layer, forming a plurality of active regions by etching the second layer and the first conductive layer, the plurality of the active regions being separated from one another by trenches, forming a side contact connected to a sidewall of the first conductive layer, and forming a plurality of metal bit lines each connected to the side contact and filling a portion of each trench. | 04-25-2013 |
20130119464 | SEMICONDUCTOR DEVICE WITH ONE-SIDE-CONTACT AND METHOD FOR FABRICATING THE SAME - A method for fabricating a semiconductor device includes forming a first conductive layer doped with an impurity for forming a cell junction over a semiconductor substrate, forming a second layer over the first conductive layer, forming a plurality of active regions by etching the second layer and the first conductive layer, the plurality of the active regions being separated from one another by trenches, forming a side contact connected to a sidewall of the first conductive layer, and forming a plurality of metal bit lines each connected to the side contact and filling a portion of each trench. | 05-16-2013 |
20130334670 | SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF - A semiconductor device and a fabrication method thereof are provided. The semiconductor device includes a first type semiconductor layer doped with an N type ion, a second type semiconductor layer formed over the first type semiconductor layer, and a silicon germanium (SiGe) layer doped with a P type ion formed over the second type semiconductor layer. | 12-19-2013 |
20140052008 | HYPERTENSION MONITORING AND NOTIFICATION DEVICE BASED ON CONTEXT INFORMATION - Disclosed is a hypertension monitoring and notification device based on context information, which includes a data gain and storage unit for storing bio information of a user, context data, and weather and health information; a user context analysis unit for deducing context information of the user from the bio information and the context data to analyze context necessary for measuring hypertension; a specific hypertension analysis unit for analyzing specific hypertension using the context information; a blood pressure grade analysis unit for determining a blood pressure grade via the analyzed context information to deduce blood pressure signal light information and to transmit a recommendation content; and a result output and notification unit for outputting and notifying the user and the doctor of the bio information, the blood pressure signal light information, the specific hypertension information, and the context information. | 02-20-2014 |
20140054532 | ACCESS DEVICE, FABRICATION METHOD THEREOF, AND SEMICONDUCTOR MEMORY DEVICE HAVING THE SAME - An access device having a reduced height and capable of suppressing leakage current, a method of fabricating the same, and a semiconductor memory device including the same, are provided. The access device may include a stacked structure including a first-type semiconductor layer having a first dopant, a second-type semiconductor layer having a second dopant, and a third-type semiconductor layer. A first counter-doping layer, having a counter-dopant to the first dopant, is interposed between the first-type semiconductor layer and the third-type semiconductor layer. A second counter-doping layer, having a counter-dopant to the second dopant, is interposed between the third-type semiconductor layer and the second-type semiconductor layer. | 02-27-2014 |
20140170828 | PLASMA DOPING METHOD AND METHOD FOR FABRICATING SEMICONDUCTOR DEVICE USING THE SAME - A doping method that forms a doped region at a desired location of a three-dimensional (3D) conductive structure, controls the doping depth and doping dose of the doped region relatively easily, has a shallow doping depth, and prevents a floating body effect. A semiconductor device is fabricated using the same doping method. The method includes, forming a conductive structure having a sidewall, exposing a portion of the sidewall of the conductive structure, and forming a doped region in the exposed portion of the sidewall by performing a plasma doping process. | 06-19-2014 |
20140179069 | FABRICATION METHOD OF SEMICONDUCTOR APPARATUS - A method of fabricating a semiconductor apparatus includes forming an insulating layer on a semiconductor substrate, forming a source post in the insulating layer, and forming a semiconductor layer over the source post and the insulating layer. | 06-26-2014 |
20140322886 | RESISTIVE MEMORY DEVICE AND FABRICATION METHOD THEREOF - A resistive memory device and a fabrication method thereof are provided. The resistive memory device includes a variable resistive layer formed on a semiconductor substrate in which a bottom structure is formed, a lower electrode formed on the variable resistive layer, a switching unit formed on the lower electrode, and an upper electrode formed on the switching unit. | 10-30-2014 |