Patent application number | Description | Published |
20100105192 | Method of Manufacturing Semiconductor Device and Substrate Processing Apparatus - A method of manufacturing a semiconductor device includes: forming an oxide film having a predetermined film thickness on a substrate by repeating a process of forming a predetermined element-containing layer on the substrate by supplying source gas containing a predetermined element into a process vessel accommodating the substrate, and a process of changing the predetermined element-containing layer to an oxide layer by supplying oxygen-containing gas and hydrogen-containing gas into the process vessel that is set below atmospheric pressure, wherein the oxygen-containing gas is oxygen gas or ozone gas, the hydrogen-containing gas is hydrogen gas or deuterium gas, and the temperature of the substrate is in a range from 400° C. or more to 700° C. or less in the process of forming the oxide film. | 04-29-2010 |
20110076857 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SUBSTRATE PROCESSING APPARATUS - Provided is a method of manufacturing a semiconductor device. The method includes: loading a substrate into a process vessel; performing a process to form an oxide, nitride, or oxynitride film on the substrate by alternately repeating: (a) forming a layer containing a predetermined element on the substrate by supplying and exhausting first and second source gases containing the element into and from the process vessel; and (b) changing the layer containing the element into an oxide, nitride, or oxynitride layer by supplying and exhausting reaction gas different from the first and second source gases into and from the process vessel; and unloading the substrate from the process vessel. The first source gas is more reactive than the second source gas, and an amount of the first source gas supplied into the process vessel is set to be less than that of the second source gas supplied into the process vessel. | 03-31-2011 |
20120045905 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, METHOD OF PROCESSING SUBSTRATE AND SUBSTRATE PROCESSING APPARATUS - Provided is a method of manufacturing a semiconductor device. The method includes: loading a substrate into a process vessel; performing a process to form an film on the substrate by alternately repeating: (a) forming a layer containing an element on the substrate by supplying at least two types of source gases into the process vessel, each of the at least two types of source gases containing the element, and (b) changing the layer containing the element by supplying reaction gas into the process vessel, the reaction gas being different from the at least two types of source gases; and unloading the processed substrate from the process vessel. | 02-23-2012 |
20130052836 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, METHOD FOR PROCESSING SUBSTRATE AND SUBSTRATE PROCESSING APPARATUS - There is provided a method for manufacturing a semiconductor device, including forming an insulating film having a prescribed composition and a prescribed film thickness on a substrate by alternately performing the following steps prescribed number of times: supplying one of the sources of a chlorosilane-based source and an aminosilane-based source to a substrate in a processing chamber, and thereafter supplying the other source, to form a first layer containing silicon, nitrogen, and carbon on the substrate; and supplying a reactive gas different from each of the sources, to the substrate in the processing chamber, to modify the first layer and form a second layer. | 02-28-2013 |
Patent application number | Description | Published |
20110124204 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, METHOD OF PROCESSING SUBSTRATE, AND SUBSTRATE PROCESSING APPARATUS - A semiconductor device manufacturing method includes: forming a layer on a substrate by supplying source gas into a process vessel; changing the layer into an oxide layer by supplying gases containing oxygen and hydrogen into the process vessel heated and kept lower than atmospheric pressure; and forming an oxide film on the substrate by alternately repeating the forming of the layer and the changing of the layer while purging an inside of the process vessel therebetween. In the forming of the layer, the source gas is supplied toward the substrate through a nozzle at a side of the substrate, and inert or hydrogen-containing gas is supplied together with the source gas through the nozzle toward the substrate, such that the velocity of the source gas flowing parallel to the substrate is greater than the velocity of the inert gas flowing parallel to the substrate in the purging of the process vessel. | 05-26-2011 |
20110130011 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, METHOD OF PROCESSING SUBSTRATE, AND SUBSTRATE PROCESSING APPARATUS - Provided is a method of manufacturing a semiconductor device. The method includes: (a) forming an oxide film having a predetermined thickness on a substrate by alternately repeating: (a-1) forming a layer containing a predetermined element on the substrate by supplying a source gas containing the predetermined element into a process vessel accommodating the substrate and exhausting the source gas from the process vessel; and (a-2) changing the layer containing the predetermined element into an oxide layer by supplying an oxygen-containing gas and an hydrogen-containing gas into the process vessel, wherein inside of the process vessel is under a heated atmosphere having a pressure lower than an atmospheric pressure; and exhausting the oxygen-containing gas and the hydrogen-containing gas from the process vessel; and (b) modifying the oxide film formed on the substrate by supplying the oxygen-containing gas and the hydrogen-containing gas into the process vessel, wherein the inside of the process vessel is under the heated atmosphere having the pressure lower than the atmospheric pressure, and exhausting the oxygen-containing gas and the hydrogen-containing gas from the process vessel. | 06-02-2011 |
20110318940 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, METHOD OF PROCESSING SUBSTRATE, AND SUBSTRATE PROCESSING APPARATUS - A method of manufacturing a semiconductor device includes forming a layer containing a predetermined element on a substrate by supplying a source gas containing the predetermined element into a process vessel and exhausting the source gas from the process vessel to cause a chemical vapor deposition (CVD) reaction. A nitrogen-containing gas is supplied into the process vessel and then exhausted, changing the layer containing the predetermined element into a nitride layer. This process is repeated to form a nitride film on the substrate. The process vessel is purged by supplying an inert gas into the process vessel and exhausting the inert gas from the process vessel between forming the layer containing the predetermined element and changing the layer containing the predetermined element into the nitride layer. | 12-29-2011 |
20120220137 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND METHOD OF PROCESSING SUBSTRATE AND SUBSTRATE PROCESSING APPARATUS - In a low-temperature, a silicon nitride film having a low in-film chlorine (Cl) content and a high resistance to hydrogen fluoride (HF) is formed. The formation of the silicon nitride film includes (a) supplying a monochlorosilane (SiH | 08-30-2012 |
20130019804 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SUBSTRATE PROCESSING APPARATUS - Provided is a substrate processing apparatus. The apparatus includes: a process vessel, a heater, a source gas supply system, an oxygen-containing gas supply system, a hydrogen-containing gas supply system, a pressure regulator, and a controller. The controller is configured to control the parts so as to perform: (a) forming an oxide film on a substrate by alternately repeating: (a-1) forming a layer by supplying a source gas into the process vessel accommodating the substrate; and (a-2) changing the layer into an oxide layer by supplying an oxygen-containing gas and an hydrogen-containing gas into the process vessel, the inside of the process vessel being under a heated atmosphere having a low pressure; and (b) modifying the oxide film formed on the substrate by supplying the oxygen-containing gas and the hydrogen-containing gas into the process vessel, the inside of the process vessel being under the heated atmosphere having the low pressure. | 01-24-2013 |
20130059451 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SUBSTRATE PROCESSING APPARATAUS - A method of manufacturing a semiconductor device, the method comprising: forming an oxide film on a substrate by alternately repeating: (a) forming an element-containing layer on the substrate by supplying a source gas containing an element into a process vessel accommodating the substrate; and (b) changing the element-containing layer to an oxide layer by supplying an oxygen-containing gas and a hydrogen-containing gas into the process vessel having an inside pressure lower than atmospheric pressure, reacting the oxygen-containing gas with the hydrogen-containing gas to generate an atomic oxygen, and oxidizing the element-containing layer by the atomic oxygen. | 03-07-2013 |
20130072027 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING METHOD, SUBSTRATE PROCESSING APPARATUS AND NON-TRANSITORY COMPUTER READABLE RECORDING MEDIUM - Provided is a method of manufacturing a semiconductor device having a structure in which an oxide film and a nitride film are stacked. The method includes forming a stacked film having an oxide film and a nitride film stacked therein on a substrate in a processing container by alternately performing a first cycle and a second cycle a predetermined number of times, the first cycle comprising forming the oxide film by supplying a source gas, a nitriding gas and an oxidizing gas to the substrate in the processing container a predetermined number of times, and the second cycle comprising forming the nitride film by supplying the source gas and the nitriding gas to the substrate in the processing container a predetermined number of times, wherein the forming of the oxide film and the forming of the nitride film are consecutively performed while retaining a temperature of the substrate constant. | 03-21-2013 |
20140318451 | SUBSTRATE PROCESSING APPARATUS - A substrate processing apparatus capable of forming an oxide film on a substrate by forming a layer on the substrate by supplying a source gas into a process vessel accommodating the substrate via the first nozzle, and simultaneously supplying an oxygen-containing gas through a second nozzle and a hydrogen-containing gas through a first nozzle into the process vessel having an inside pressure thereof lower than atmospheric pressure; mixing and reacting the oxygen-containing gas with the hydrogen-containing gas in a non-plasma atmosphere within the process vessel to generate atomic oxygen; and oxidizing the layer with the atomic oxygen to change the layer into an oxide layer is disclosed. | 10-30-2014 |