Patent application number | Description | Published |
20100088435 | Serial Data Transfer Apparatus - A serial data transfer apparatus includes a transport controller that performs a process of a transport layer, a link controller that performs a process of a link layer, and a physical layer circuit that performs a process of a physical layer. The serial data transfer apparatus transmits and receives data with a destination apparatus via a serial bus. The link controller outputs idle data, which is received from the destination apparatus, to the physical layer circuit, and stops to operate of a unit responsible for generating data to transmit to the destination apparatus while outputting the idle data to the physical layer circuit. This enables to output idle data defined in the standard in an idle period of the serial data transfer apparatus and also reduce the power consumption. | 04-08-2010 |
20110074017 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE AND MULTILAYER WAFER STRUCTURE - Grooves are formed on the front surfaces of first and second semiconductor wafers each including an aggregate of a plurality of semiconductor chips. The grooves each extend on a dicing line set between the semiconductor chips and to have a larger width than the dicing line. Thereafter the first and second semiconductor wafers are arranged so that the front surfaces thereof are opposed to each other, and the space between the first semiconductor wafer and the second semiconductor wafer is sealed with underfill. Thereafter the rear surfaces of the first and second semiconductor wafers are polished until at least the grooves are exposed, and a structure including the first and second semiconductor wafers and the underfill is cut on the dicing line. | 03-31-2011 |
20120077332 | SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE - To divide a semiconductor wafer by stealth dicing, a test pad in a cutting region and an alignment target are collectively arranged along one side in a width direction of the cutting region, and a laser beam for forming a modified region is irradiated to a position away in plane from the test pad and the alignment target Am. In this manner, defects in cutting shape in a cutting process of a semiconductor wafer using stealth dicing can be reduced or prevented. | 03-29-2012 |
20120089757 | SERIAL DATA TRANSFER APPARATUS - A serial data transfer apparatus includes a transport controller that performs a process of a transport layer, a link controller that performs a process of a link layer, and a physical layer circuit that performs a process of a physical layer. The serial data transfer apparatus transmits and receives data with a destination apparatus via a serial bus. The link controller outputs idle data, which is received from the destination apparatus, to the physical layer circuit, and stops to operate of a unit responsible for generating data to transmit to the destination apparatus while outputting the idle data to the physical layer circuit. This enables to output idle data defined in the standard in an idle period of the serial data transfer apparatus and also reduce the power consumption. | 04-12-2012 |
20120184068 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A method includes the steps of: (a) fixing a front surface of a wafer (semiconductor wafer) having the front surface, a plurality of chip regions formed on the front surface, a dicing region formed between the chip regions, and a rear surface opposite to the front surface to the supporting member; (b) in a state of having the wafer fixed to the supporting member, grinding the rear surface of the wafer to expose the rear surface; (c) in a state of having the wafer fixed to the supporting member, dividing the wafer into the chip regions; (d) etching side surfaces of the chip regions to remove crushed layers formed in the step (c) on the side surfaces and obtain a plurality of semiconductor chips. After the steps (e) and (d), the plurality of divided chip regions are peeled off from the supporting member to obtain a plurality of semiconductor chips. | 07-19-2012 |
20120331193 | SERIAL DATA TRANSFER APPARATUS - A serial data transfer apparatus includes a transport controller that performs a process of a transport layer, a link controller that performs a process of a link layer, and a physical layer circuit that performs a process of a physical layer. The serial data transfer apparatus transmits and receives data with a destination apparatus via a serial bus. The link controller outputs idle data, which is received from the destination apparatus, to the physical layer circuit, and stops to operate of a unit responsible for generating data to transmit to the destination apparatus while outputting the idle data to the physical layer circuit. This enables to output idle data defined in the standard in an idle period of the serial data transfer apparatus and also reduce the power consumption. | 12-27-2012 |
20140220740 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE AND MULTILAYER WAFER STRUCTURE - Grooves are formed on the front surfaces of first and second semiconductor wafers each including an aggregate of a plurality of semiconductor chips. The grooves each extend on a dicing line set between the semiconductor chips and to have a larger width than the dicing line. Thereafter the first and second semiconductor wafers are arranged so that the front surfaces thereof are opposed to each other, and the space between the first semiconductor wafer and the second semiconductor wafer is sealed with underfill. Thereafter the rear surfaces of the first and second semiconductor wafers are polished until at least the grooves are exposed, and a structure including the first and second semiconductor wafers and the underfill is cut on the dicing line. | 08-07-2014 |
Patent application number | Description | Published |
20080286948 | Fabrication Method of Semiconductor Integrated Circuit Device - A technique capable of stably releasing chips from a dicing tape, includes grinding a back surface of a semiconductor wafer, while adhering a pressure sensitive adhesive tape to a circuit forming surface of the semiconductor wafer formed with an integrated circuit, to achieve a predetermined thickness and forcibly oxidizing the back surface of the semiconductor wafer. Then, the pressure sensitive adhesive tape adhered to the circuit forming surface of the semiconductor wafer is released, and a dicing tape is adhered to the back surface of the semiconductor wafer. Further, the semiconductor wafer is divided by dicing it into individual chips, and then the back surface of the chip is pressed by way of the dicing tape, thereby releasing the chips from the dicing tape. | 11-20-2008 |
20080318362 | Manufacturing Method of Semiconductor Integrated Circuit Device - After performing rough grinding to the back surface of a semiconductor wafer using the first grinding material (for example, particle size of polish fine powder from #320 to #360) and making the thickness of the semiconductor wafer, for example less than 140 □m, less than 120 □m, or less than 100 □m, the back surface of the semiconductor wafer being performed fine finish grinding using the third grinding material (for example, particle size of polish fine powder from #3000 to #100000), the thickness of the semiconductor wafer becomes, for example less than 100 □m, less than 80 □m, or less than 60 □m, and the relatively thin second crush layer, for example the second crush layer of the thickness of less than 0.5 □m, less than 0.3 □m, or less than 0.1 □m is formed on the back surface of the semiconductor wafer. Thereby, without reducing the die strength of a chip, at the same time permeation of the pollution impurities from the back surface of the semiconductor wafer and further, diffusion of the pollution impurities to the circuit formation surface of the semiconductor wafer are prevented, and the poor characteristic of semiconductor elements is prevented. | 12-25-2008 |
20100308442 | SEMICONDUCTOR DEVICE, SEMICONDUCTOR WAFER AND MANUFACTURING METHOD OF THE SAME - In a state where an adhesive tape is attached onto a main surface of a semiconductor wafer, a trench is formed in a rear surface of the semiconductor wafer. For forming the trench in the rear surface of the semiconductor wafer, after coating a resist film on the rear surface of the semiconductor wafer, the resist film is patterned by using the photolithography technology. The patterning of the resist film is performed so as not to leave the resist film in the region where the trench is to be formed. Then, the trench is formed in a predetermined region of the semiconductor wafer by the dry etching technology using the patterned resist film as a mask. Specifically, the trench is formed in the region near the dicing line. | 12-09-2010 |
Patent application number | Description | Published |
20100308542 | HYDRAULIC CYLINDER - The hydraulic cylinder having a portion on a side of a lip tip end of an annular clearance between an inner circumferential face of a shaft hole of a cylinder and a piston is made up of a minute clearance in order to suppress protrusion of the lip, wherein an annular clearance area for suppressing occurrence of the cavitation and for shortening an axial distance of the annular clearance portion made up of the minute clearance is formed on an opposite side of the annular clearance portion from a mounting groove. | 12-09-2010 |
20110169226 | SEALING SYSTEM - A sealing system is provided which is intended to achieve an improvement in durability. A dust seal is composed of a first dust seal ( | 07-14-2011 |
20110305871 | Sliding Member and Process for Producing the Same - Object: To provide a sliding member with a low friction coefficient in which, when fine dents are formed in a surface of the sliding member by dimpling using a laser, no hard raised portions are gerenrated, and which does not damage a mating member; and to provide a process for producing the sliding member. | 12-15-2011 |
20130026714 | Sealing Device - A sealing device in which a good lubricating oil film is formed along the entire circumference of a sliding surface. The sealing device ( | 01-31-2013 |
20130234398 | SEALING SYSTEM - A sealing system is provided which is intended to achieve an improvement in durability. A dust seal is composed of a first dust seal ( | 09-12-2013 |
Patent application number | Description | Published |
20090117709 | MANUFACTURING METHOD OF SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE - The technology in which lowering of the manufacturing yield of the semiconductor products resulting from contamination impurities can be suppressed is offered. | 05-07-2009 |
20090121337 | SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SEMICONDUCTOR - To divide a semiconductor wafer by stealth dicing, a test pad in a cutting region and an alignment target are collectively arranged along one side in a width direction of the cutting region, and a laser beam for forming a modified region is irradiated to a position away in plane from the test pad and the alignment target Am. In this manner, defects in cutting shape in a cutting process of a semiconductor wafer using stealth dicing can be reduced or prevented. | 05-14-2009 |
20090191667 | SEMICONDUCTOR DEVICE AND A MANUFACTURING METHOD OF THE SAME - A semiconductor device having a structure in which the structure is laminated in many stages is made thin. A reforming area is formed by irradiating a laser beam, where a condensing point is put together with the inside of the semiconductor substrate of a semiconductor wafer. Then, after applying the binding material of liquid state to the back surface of a semiconductor wafer by a spin coating method, this is dried and a solid-like adhesive layer is formed. Then, a semiconductor wafer is divided into each semiconductor chip by making the above-mentioned reforming area into a division origin. By pasting up this semiconductor chip on the main surface of the other semiconductor chip by the adhesive layer of the back surface, a semiconductor device having a structure in which the semiconductor device is laminated in many stages is manufactured. | 07-30-2009 |
20100213594 | SEMICONDUCTOR DEVICE AND A MANUFACTURING METHOD OF THE SAME - A semiconductor device having a structure in which the structure is laminated in many stages is made thin. A reforming area is formed by irradiating a laser beam, where a condensing point is put together with the inside of the semiconductor substrate of a semiconductor wafer. Then, after applying the binding material of liquid state to the back surface of a semiconductor wafer by a spin coating method, this is dried and a solid-like adhesive layer is formed. Then, a semiconductor wafer is divided into each semiconductor chip by making the above-mentioned reforming area into a division origin. By pasting up this semiconductor chip on the main surface of the other semiconductor chip by the adhesive layer of the back surface, a semiconductor device having a structure in which the semiconductor device is laminated in many stages is manufactured. | 08-26-2010 |
20110124180 | SEMICONDUCTOR DEVICE MANUFACTURING METHOD COMPRISING A METAL PATTERN AND LASER MODIFIED REGIONS IN A CUTTING REGION - To divide a semiconductor wafer by stealth dicing, a test pad in a cutting region and an alignment target are collectively arranged along one side in a width direction of the cutting region, and a laser beam for forming a modified region is irradiated to a position away in plane from the test pad and the alignment target Am. In this manner, defects in cutting shape in a cutting process of a semiconductor wafer using stealth dicing can be reduced or prevented. | 05-26-2011 |
20110126899 | OXIDE EVAPORATION MATERIAL, TRANSPARENT CONDUCTING FILM, AND SOLAR CELL - An oxide evaporation material according to the present invention includes a sintered body containing indium oxide as a main component thereof and cerium with a Ce/In atomic ratio of 0.001 to 0.110. The L* value in the CIE 1976 color space is 62 to 95. The oxide evaporation material with the L* value of 62 to 95 has an optimal oxygen amount. Accordingly, even when a small amount of an oxygen gas is introduced into a film-formation vacuum chamber, a transparent conducting film having a low resistance and a high transmittance in the visible to near-infrared region is formed by vacuum deposition methods. Since the amount of the oxygen gas introduced is small, the difference in composition between the film and the evaporation material is made small. This reduces the variations in composition and characteristics among films formed in large quantities. | 06-02-2011 |
20110147676 | OXIDE EVAPORATION MATERIAL AND HIGH-REFRACTIVE-INDEX TRANSPARENT FILM - An oxide evaporation material in the present invention comprises a sintered body containing indium oxide as a main component thereof and cerium with the Ce/In atomic ratio of more than 0.110 and equal to or less than 0.538, and has an L* value of 62 to 95 in the CIE 1976 color space. The oxide evaporation material with the L* value of 62 to 95 has an optimal oxygen amount. Accordingly, even when a small amount of oxygen gas is introduced into a film-formation vacuum chamber, a high-refractive-index transparent film having a refractive index of 2.15 to 2.51 at a wavelength of 550 nm, a low resistance, and a high transmittance in the visible to near-infrared region is formed by vacuum deposition methods. Since the introduced oxygen gas amount is small, the difference in composition between the film and the evaporation material is made small. | 06-23-2011 |
20120279564 | OXIDE EVAPORATION MATERIAL, VAPOR-DEPOSITED THIN FILM, AND SOLAR CELL - Provided are an oxide tablet for vapor deposition (oxide evaporation material), and a vapor-deposited thin film and a solar cell formed using the same. The tablet comprises a sintered body which contains indium oxide as a main component and cerium and which is subjected to no surface grinding after sintering, in which Comp | 11-08-2012 |
20130143359 | SEMICONDUCTOR DEVICE AND A MANUFACTURING METHOD OF THE SAME - A semiconductor device having a structure in which the structure is laminated in many stages is made thin. A reforming area is formed by irradiating a laser beam, where a condensing point is put together with the inside of the semiconductor substrate of a semiconductor wafer. Then, after applying the binding material of liquid state to the back surface of a semiconductor wafer by a spin coating method, this is dried and a solid-like adhesive layer is formed. Then, a semiconductor wafer is divided into each semiconductor chip by making the above-mentioned reforming area into a division origin. By pasting up this semiconductor chip on the main surface of the other semiconductor chip by the adhesive layer of the back surface, a semiconductor device having a structure in which the semiconductor device is laminated in many stages is manufactured. | 06-06-2013 |
20130153024 | MULTILAYER TRANSPARENT ELECTROCONDUCTIVE FILM AND METHOD FOR MANUFACTURING SAME, AS WELL AS THIN-FILM SOLAR CELL AND METHOD FOR MANUFACTURING SAME - A multilayer transparent electroconductive film is obtained by stacking a transparent electroconductive film (II) on a transparent electroconductive film (I), and in this structure, the transparent electroconductive film (I) contains one or more added elements selected from aluminum and gallium, and the content of the added elements is in a range represented by −2.18×[Al]+1.74≦[Ga]≦−1.92×[Al]+6.10. The transparent electroconductive film (II) contains one or more added elements selected from aluminum and gallium, and the content of the added elements is in a range represented by −[Al]+0.30≦[Ga]≦−2.68×[Al]+1.74. In this case, [Al] is the aluminum content expressed as the atomic ratio (%) Al/(Zn+Al) and [Ga] is the gallium content expressed as the atomic ratio (%) Ga/(Zn+Ga). | 06-20-2013 |
20130327395 | OXIDE EVAPORATION MATERIAL, TRANSPARENT CONDUCTING FILM, AND SOLAR CELL - An oxide evaporation material according to the present invention includes a sintered body containing indium oxide as a main component thereof and cerium with a Ce/In atomic ratio of 0.001 to 0.110. The L* value in the CIE 1976 color space is 62 to 95. The oxide evaporation material with the L* value of 62 to 95 has an optimal oxygen amount. Accordingly, even when a small amount of an oxygen gas is introduced into a film-formation vacuum chamber, a transparent conducting film having a low resistance and a high transmittance in the visible to near-infrared region is formed by vacuum deposition methods. Since the amount of the oxygen gas introduced is small, the difference in composition between the film and the evaporation material is made small. This reduces the variations in composition and characteristics among films formed in large quantities. | 12-12-2013 |
20140252643 | SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE - To divide a semiconductor wafer by stealth dicing, a test pad in a cutting region and an alignment target are collectively arranged along one side in a width direction of the cutting region, and a laser beam for forming a modified region is irradiated to a position away in plane from the test pad and the alignment target Am. In this manner, defects in cutting shape in a cutting process of a semiconductor wafer using stealth dicing can be reduced or prevented. | 09-11-2014 |
Patent application number | Description | Published |
20100014178 | Absorption type multi-layer film ND filter - In an absorption type multi-layer film ND filter having a thin substrate and provided thereon first and second absorption type multi-layer films which attenuate transmitted light, the first and second absorption type multi-layer films are constituted of multi-layer films each consisting essentially of dielectric layers formed of SiO | 01-21-2010 |
20110109970 | FILM TYPE LIGHT SHADING PLATE, AND DIAPHRAGM, DIAPHRAGM DEVICE FOR ADJUSTING A LIGHT INTENSITY OR SHUTTER USING THE SAME - The film type light shading plate widely applicable to optical parts in which a light shading thin film having sufficient light shading performance and low reflectivity in the visible range is formed on a resin film of a base substrate, and further a diaphragm for digital camera or digital video camera, a diaphragm device for adjusting a light intensity of projector or a shutter to which said film type light shading plate is applied. The film type light shading plate in which a light shading thin film (B) comprising of a crystalline titanium oxy-carbide film is formed on at least one surface of the resin film substrate (A), characterized in that the light shading thin film (B) has an average optical density of 4.0 or more in wavelength 400 to 800 nm by a carbon content of 0.6 or more as C/Ti atomicity ratio, an oxygen content of 0.2 to 0.6 as O/Ti atomicity ratio, and a total thickness of the light shading thin film (B) of 260 nm or more. | 05-12-2011 |
20110164297 | BLACK COATING FILM AND PRODUCTION METHOD THEREFOR, BLACK LIGHT SHADING PLATE, AND DIAPHRAGM, DIAPHRAGM DEVICE FOR LIGHT INTENSITY ADJUSTMENT, SHUTTER USING THE SAME, AND HEAT RESISTANT LIGHT SHADING TAPE - A heat resistant black coating film which is capable of making the surface of optical members to be low reflection property and black property, a black light shading plate having a resin film using the same as a base substrate, and a diaphragm, a diaphragm device for light intensity adjustment and a shutter using the same, and heat resistant light shading tape. | 07-07-2011 |
Patent application number | Description | Published |
20130199179 | TURBOCHARGER SYSTEM - A turbocharger system for ensuring a sufficient exhaust gas recirculation (“EGR”) amount in all operating conditions, and reducing NOx emission from an engine. The system includes an EGR controller that re-circulates a part of exhaust gas discharged from the engine to an intake side. The turbocharger is a power-assisted turbocharger including an electric motor that assists a drive force of a compressor. The EGR controller controls an amount of exhaust gas recirculated to the intake side so as to inhibit the generation of NOx regardless of an amount of oxygen necessary for combustion of the engine. An electric motor control unit drives the electric motor, by the control of the EGR controller, when the amount of oxygen necessary for the combustion of the engine is deficient. | 08-08-2013 |
20130209291 | TURBOCHARGER SYSTEM - A turbocharger system includes: a high-pressure stage turbocharger including a high-pressure stage turbine disposed on an exhaust passage and driven by exhaust, and a high-pressure stage compressor disposed on an intake passage and driven by a rotational torque of the high-pressure stage turbine; and a low-pressure stage turbocharger including a low-pressure stage turbine disposed on the exhaust passage of a more downstream side than the high-pressure stage turbine and driven by exhaust, and a low-pressure stage compressor disposed on the intake passage of a more upstream side than the high-pressure stage compressor and driven by a rotational torque of the low-pressure stage turbine, wherein the high-pressure stage turbocharger includes an electric motor that assists a drive force of the high-pressure stage compressor. | 08-15-2013 |
20130213036 | ENGINE SYSTEM - An engine system for ensuring a sufficient boost pressure during engine braking and improving a braking force of a compression release brake. The system includes: a compression release brake device that operates a compression release brake to obtain a braking force during engine braking by forcibly opening an exhaust valve and releasing a compressive pressure near a compression top dead center of an engine; a power-assisted turbocharger including a turbine disposed on an exhaust passage of the engine and driven by exhaust, a compressor disposed on an intake passage and driven by a rotational torque of the turbine, and an electric motor that assists a drive force of the compressor; and an electric motor control unit that drives the electric motor when the compressor release brake is operated. | 08-22-2013 |
20130213037 | TURBOCHARGER SYSTEM - A turbocharger system for simultaneously improving a fuel efficiency and obtaining a satisfactory hill start performance due to a downsized engine. The system includes an electric assist turbocharger which includes a turbine disposed in an exhaust passage of an engine and driven by exhaust gas, a compressor disposed in an intake passage and driven by a rotational torque of the turbine, and an electric motor assisting a driving force of the compressor and an electric motor control unit which drives the electric motor when detecting a start operation at a sloping road. | 08-22-2013 |
20130213351 | ENGINE SYSTEM - An engine system capable of immediately restarting an engine upon detecting a driver's reaccelerating operation while an engine speed is decreased by idle-stop control. The system includes an idle-stop control unit which performs the idle-stop control of stopping fuel injection to the engine when the engine idly rotates upon stopping the vehicle by connecting an electric assist turbocharger obtained by the combination of a turbocharger and a motor to an intake and exhaust system of the engine. The idle-stop control unit is configured to restart the engine by resuming the fuel injection to the engine while operating a motor upon detecting the reaccelerating operation during the idle-stop control. | 08-22-2013 |
20130216408 | TURBOCHARGER SYSTEM - A turbocharger system for achieving both improvement of fuel efficiency by engine downsizing and excellent shock loading resistance. The system includes: a power-assisted turbocharger mounted on a vehicle having an accessory and including a turbine disposed on an exhaust passage of an engine and driven by exhaust, a compressor disposed on an intake passage and driven by a rotational torque of the turbine, and an electric motor that assists a drive force of the compressor; and an electric motor control unit that drives the electric motor when the accessory is being driven. | 08-22-2013 |