Patent application number | Description | Published |
20100142751 | METHOD AND APPARATUS FOR ANALYZING PANICLE STRUCTURE - An analysis apparatus that analyzes a branching structure of a panicle includes an image capturing unit that captures a panicle image; a portion extracting unit that extracts branches and seed grains from the panicle image; a branching-state determination unit that determines a branching state of the branches; and a data file that has a tree structure corresponding to the branching state of the branches, wherein the branching-state determination unit stores the branching state of the branches in the data file. | 06-10-2010 |
20150259659 | METHOD FOR OBTAINING NATURAL VARIANT OF ENZYME AND SUPER THERMOSTABLE CELLOBIOHYDROLASE - A method for selectively obtaining a natural variant of an enzyme having activity includes (1) a step of detecting an ORF sequence of a protein having enzyme activity from a genome database including base sequences of metagenomic DNA of environmental microbiota; (2) a step of obtaining at least one PCR clone including the ORF sequence having a full length, a partial sequence of the ORF sequence, or a base sequence encoding an amino acid sequence which is formed by deletion, substitution, or addition of at least one amino acid residue in an amino acid sequence encoded by the ORF sequence, by performing PCR cloning on at least one metagenomic DNA of the environmental microbiota by using a primer designed based on the ORF sequence; (3) a step of determining a base sequence and an amino acid sequence which is encoded by the base sequence for each PCR clone obtained in the step (2); and (4) a step of selecting a natural variant of an enzyme having activity by measuring enzyme activity of proteins encoded by each PCR clone obtained in the step (2). | 09-17-2015 |
20150259660 | THERMOSTABLE CELLOBIOHYDROLASE AND AMINO ACID SUBSTITUTED VARIANT THEREOF - A thermostable cellobiohydrolase including a cellobiohydrolase catalytic domain, the cellobiohydrolase catalytic domain including:
| 09-17-2015 |
20160024486 | THERMOSTABLE XYLANASE BELONGING TO GH FAMILY 10 - A thermostable xylanase including a xylanase catalytic domain, the xylanase catalytic domain including:
| 01-28-2016 |
20160032265 | THERMOSTABLE BETA-XYLOSIDASE BELONGING TO GH FAMILY 3 - A thermostable β-xylosidase including a β-xylosidase catalytic domain, the β-xylosidase catalytic domain including:
| 02-04-2016 |
20160053246 | THERMOSTABLE CELLOBIOHYDROLASE - The thermostable cellobiohydrolase of the present invention is a polypeptide which has cellobiohydrolase activity at least under conditions of a temperature of 75° C. and a pH of 5.5, and which includes a polypeptide including an amino acid sequence represented by SEQ ID NO: 1, 3, 5, or 7, a polypeptide including an amino acid sequence in which one or several amino acids are deleted, substituted, or added in an amino acid sequence represented by SEQ ID NO: 1, 3, 5, or 7, or a polypeptide including an amino acid sequence having 80% or greater but less than 100% sequence identity with an amino acid sequence represented by SEQ ID NO: 1, 3, 5, or 7. | 02-25-2016 |
20160060666 | THERMOSTABLE XYLANASE BELONGING TO GH FAMILY 10 - A thermostable xylanase having a xylanase catalytic domain including: (A) a polypeptide including the amino acid sequence represented by SEQ ID NO: 1, (B) a polypeptide including an amino acid sequence in which at least one amino acid has been deleted, substituted, or added in the amino acid sequence represented by SEQ ID NO: 1, and having xylanase activity at least under conditions of 85° C. and pH 6.0, or (C) a polypeptide including an amino acid sequence having 80% or greater sequence identity with the amino acid sequence represented by SEQ ID NO: 1, and having xylanase activity at least under conditions of 85° C. and pH 6.0. | 03-03-2016 |
20160076015 | THERMOSTABLE BETA-GLUCOSIDASE - A thermostable β-glucosidase including a β-glucosidase catalytic domain, the β-glucosidase catalytic domain including:
| 03-17-2016 |
20160076016 | THERMOSTABLE BETA-GLUCOSIDASE - A thermostable β-glucosidase including a β-glucosidase catalytic domain, the β-glucosidase catalytic domain including:
| 03-17-2016 |
20160076017 | THERMOSTABLE BETA-XYLOSIDASE BELONGING TO GH FAMILY 3 - A thermostable β-xylosidase, having a β-xylosidase catalytic domain including: (A) a polypeptide including the amino acid sequence represented by SEQ ID NO: 1, 3 or 5, (B) a polypeptide including an amino acid sequence in which at least one amino acid has been deleted, substituted, or added in the amino acid sequence represented by SEQ ID NO: 1, 3 or 5, and having hydrolysis activity against a substrate of p-nitrophenyl-β-D-xylopyranoside at least under conditions of 80° C. and pH 4.0, or (C) a polypeptide including an amino acid sequence having 80% or greater sequence identity with the amino acid sequence represented by SEQ ID NO: 1, 3 or 5, and having hydrolysis activity against a substrate of p-nitrophenyl-β-D-xylopyranoside at least under conditions of 80° C. and pH 4.0. | 03-17-2016 |
20160108385 | HYPERTHERMOSTABLE ENDOGLUCANASE BELONGING TO GH FAMILY 12 - A hyperthermostable endoglucanase including an endoglucanase catalytic domain, the endoglucanase catalytic domain including:
| 04-21-2016 |
20160122791 | HYPERTHERMOSTABLE ENDOGLUCANASE BELONGING TO GH FAMILY 12 - A hyperthermostable endoglucanase including an endoglucanase catalytic domain, the endoglucanase catalytic domain including:
| 05-05-2016 |
Patent application number | Description | Published |
20110071266 | Curable Organopolysiloxane Composition, Method of Curing Thereof, Semiconductor Device, And Adhesion Promotor - A curable organopolysiloxane composition comprising an organopolysiloxane containing alkenyl groups and phenyl groups, an organohydrogenpolysiloxane, a copolymer of a vinyl monomer and a vinyl monomer with hydrosilyl groups, and a platinum catalyst; a curing process that consists of two or more stages of thermal curing; an optical semiconductor device that has a light-transmitting portion made from a cured body of the aforementioned composition; and an adhesion promoter that consists of a copolymer of a vinyl monomer and a vinyl monomer with hydrosilyl groups. | 03-24-2011 |
20110086989 | Organopolysiloxane, Method of Manufacturing Thereof, Curable Silicone Composition, And Cured Product Thereof - A curable organopolysiloxane composition comprising: (A) an novel organopolysiloxane represented by the following average structural formula: R | 04-14-2011 |
20110092647 | Curable Organopolysiloxane Composition And Cured Product Thereof - A curable organopolysiloxane composition comprising: (A) a solvent-soluble organopolysiloxane obtained by conducting a hydrosilylation reaction between (i) an organopolysiloxane represented by the following average structural formula: R | 04-21-2011 |
20110118413 | SILICON-CONTAINING POLYMER, METHOD OF MANUFACTURING THEREOF, AND CURABLE POLYMER COMPOSITION - A silicon-containing polymer represented by the following average unit formula: (O2/2SiR1-R2-C6H4-R2-SiR1O2/2)x [R3 SiO(4-a)/2]y(R4O1/2)z (wherein R | 05-19-2011 |
20110143025 | Method Of Manufacturing A Layered Silicone Composite Material - A method of manufacturing a layered silicone composite material comprising the steps of: applying a second addition-curable organopolysiloxane composition that contains a second adhesion promoter onto a first silicone layer that is formed by curing a first addition-curable organopolysiloxane composition containing a first adhesion promoter and where the first silicone layer has a hardness of less than JIS A 50; and forming a second silicone layer that has hardness of JIS A 50 or more by curing said second addition-curable organopolysiloxane composition. | 06-16-2011 |
20120205580 | Emulsion, Its Manufacturing Method And Silicone Oil Composition - This invention relates to a silicone oil emulsion that contains cross-linked silicone particles in drops of silicone oil which have an average particle diameter of 0.1 to 500 μm and are dispersed in water, wherein the silicone oil contains epoxy groups, acryl groups, methacryl groups, silicon-bonded alkoxy groups, or silicon-bonded hydroxyl groups but is free of silicon-bonded hydrogen atoms and alkenyl groups, said cross-linked silicone particles is formed by a hydrosilation reaction. Furthermore, this invention also relates to a silicone oil composition obtained by removing water from said emulsion. | 08-16-2012 |
20120232202 | Cross-Linkable Silicone Composition, Emulsion Thereof And Method Of Manufactering - An emulsion of a silicone oil that contains cross-linked silicone particles in droplets of a silicone oil which are dispersed in water, wherein the aforementioned silicone oil is an organopolysiloxane having in its molecule at least two alkenyl groups, and wherein the cross-linked silicone particles are formed by a hydrosilation reaction; and a cross-linkable silicone composition comprising (I) a silicone composition obtained by removing water from the aforementioned emulsion, (II) an organopolysiloxane that contains in its molecule at least two silicon-bonded hydrogen atoms; and (III) a hydrosilation catalyst. | 09-13-2012 |
20120237581 | Method Of Producing A Silicone Powder-Containing Oil Composition - The present invention relates to a method of producing a silicone powder-containing oil composition, characterized by removing the water from a water-based emulsion of a silicone powder-containing oil composition while stirring this emulsion under reduced pressure with a stirring apparatus that has at least a stirring means that rotates at low speed along the inner wall of a container and a stirring means that rotates at high speed in the interior of the container. | 09-20-2012 |
20120301524 | SILICONE OIL EMULSION, METHOD OF PRODUCING SAME, AND SILICONE OIL COMPOSITION - To provide a silicone oil emulsion that can improve the properties of cosmetic materials and that contains crosslinked silicone particles in water-dispersed silicone oil droplets; a method of producing this silicone oil emulsion; and a silicone oil composition thereof. This invention is a silicone oil emulsion comprising crosslinked silicone particles having an average particle size of 0.05 to 100 μm in silicone oil droplets that are dispersed in water and that have an average particle size of 0.1 to 500 μm wherein the silicone oil is an alkyl-modified silicone oil that has a silicon-bonded alkyl group having at least 4 carbons and the crosslinked silicone particles preferably have a silicon-bonded alkyl group having at least 4 carbons. Also, a silicone oil composition as provided by removing the water from this silicone oil emulsion. | 11-29-2012 |
20120301525 | SILICONE OIL EMULSION, METHOD OF PRODUCING SAME, AND SILICONE OIL COMPOSITION - This invention is related to a silicone oil emulsion comprising silicon-containing crosslinked particles in silicone oil droplets that are dispersed in water and have an average particle size of 0.1 to 500 μm wherein the silicon-containing crosslinked particles have an average particle size of 0.05 to 100 μm and are provided by the crosslinking of a crosslinkable composition comprising at least (A) a silicon-free organic compound that has at least two aliphatically unsaturated bonds in each molecule, (B) a silicon-containing organic compound that has at least two silicon-bonded hydrogen atoms in each molecule, and (C) a hydrosilylation reaction catalyst. The inventive silicone oil emulsion is characterized in that the silicone oil is an alkyl-modified silicone oil that has a silicon-bonded alkyl group having at least 4 carbons. This invention is also related to a silicone oil composition as provided by removing the water from this silicone oil emulsion. | 11-29-2012 |
20130338265 | Curable Epoxy Resin Composition - To provide a curable epoxy resin composition that exhibits excellent fluidity during molding without having adverse effects on the physical properties of the cured material. A curable epoxy resin composition, containing (I) a curable epoxy resin, and (II) an epoxy functional group- and aromatic hydrocarbon group-containing organopolysiloxane having an epoxy equivalent weight of 3,000 or lower, a content of aromatic hydrocarbon groups of 45 to 80% by weight (mass), and a glass transition point of less than 0° C. | 12-19-2013 |
20140191161 | Curable Silicon Composition, Cured Product Thereof, And Optical Semiconductor Device - A hydrosilylation curable silicone composition that forms a cured product with a high refractive index, high transparency, excellent heat resistance, and excellent flexibility, the hydrosilylation curable silicone composition comprising, as a main component, an organopolysiloxane represented by the following average unit formula: | 07-10-2014 |
20150072139 | Release Film, Compression Molding Method, And Compression Molding Apparatus - The present invention relates to a release film used by being interposed between a molding material and a mold when the molding material is compression molded using the mold in order to form a sealing material or reflective frame material for an optical semiconductor element, or a lens, wherein the release film comprises a silicone-based cured product layer ( | 03-12-2015 |
20150252221 | Curable Silicone Composition, Cured Product Thereof, And Optical Semiconductor - The present invention relates to a curable silicone composition comprising: (A) an organopolysiloxane having at least two alkenyl groups in a molecule and represented by the average unit formula; (B) a straight chain organopolysiloxane having at least two alkenyl groups in a molecule and having no silicon-bonded hydrogen atoms; (C) an organosiloxane i) represented by the general formula, an organopolysiloxane (C | 09-10-2015 |
20150329681 | Organopolysiloxane, Curable Silicone Composition, Cured Product Thereof, And Optical Semiconductor - The present invention relates to a curable silicone composition comprising: (A) an organopolysiloxane represented by a specific average unit formula, (B) an optional straight-chain organopolysiloxane having at least two alkenyl groups and not having any silicon-bonded hydrogen atoms in a molecule, (C) an organopolysiloxane having at least two silicon-bonded hydrogen atoms in a molecule, and (D) a hydrosilylation reaction catalyst. The curable silicone composition has high reactivity and forms a cured product with low gas permeability. | 11-19-2015 |
20150344636 | Curable Silicone Composition, Cured Product Thereof, And Optical Semiconductor Device - The present invention relates to a curable silicone composition comprising: (A) an organopolysiloxane resin having at least two alkenyl groups in a molecule; (B) a straight-chain organopolysiloxane having at least two alkenyl groups and not having silicon-bonded hydrogen atoms in a molecule; (C) an organopolysiloxane having a condensed polycyclic aromatic group or a group including a condensed polycyclic aromatic group; and (D) a hydrosilylation reaction catalyst. The curable silicone composition has excellent handling and processability and can form a cured product with a high refractive index and low gas permeability. | 12-03-2015 |
20150344692 | Curable Silicone Composition, Cured Product Thereof, And Optical Semiconductor Device - The present invention relates to a curable silicone composition comprising: (A) an organopolysiloxane resin having at least two alkenyl groups in a molecule; (B) an organopolysiloxane represented by a general formula; (C) an organosiloxane (C | 12-03-2015 |
20150344735 | Curable Silicone Composition, Cured Product Thereof, And Optical Semiconductor Device - The present invention relates to a curable silicone composition comprising: (A) an alkenyl group-containing organopolysiloxane having a condensed polycyclic aromatic group or a group containing a condensed polycyclic aromatic group; (B) an organopolysiloxane resin having at least two alkenyl groups in a molecule; (C) an organosiloxane (C | 12-03-2015 |
20150376344 | Curable Silicone Composition, Cured Product Thereof, And Optical Semiconductor Device - This invention relates to a curable silicone composition comprising: (A) a straight-chain organopolysiloxane having at least two alkenyl groups in a molecule; (B) an organopolysiloxane represented by the following average unit formula: (R | 12-31-2015 |
Patent application number | Description | Published |
20080237301 | Solder preform and a process for its manufacture - A mixed mother alloy is prepared from a solder mixture comprising a pyrolyzable flux and high melting point metal particles, the mixed mother alloy is charged into a large amount of molten solder and stirred, and a billet is prepared. The billet can then be extruded, rolled, and punched to form a pellet or a washer, for example. | 10-02-2008 |
20100273025 | BRAZING METHOD AND BRAZED STRUCTURE - A brazing method which provides a braze joint having excellent corrosion resistance and a brazed structure including such a braze joint includes assembling a first member and a second member to be joined into a temporary assembly, the first member including a base plate made of a ferrous material and a diffusion suppressing layer laminated on the base plate and composed of a N—Cr alloy essentially including not less than about 15% and not greater than about 40% of Cr, the second member being disposed on the diffusion suppressing layer of the first member with intervention of a brazing material of a Cu—Ni alloy essentially including not less than about 10% and not greater than about 20% of Ni, and maintaining the temporary assembly at a temperature of not less than about 1,200° C. to fuse the brazing material and diffuse Ni atoms and Cr atoms into the fused brazing material from the diffusion suppressing layer to form the braze joint, causing the resulting brazing material of the braze joint to have an increased melting point due to the increase of the Ni and Cr contents of the braze joint to self-solidify the braze joint, and then cooling the resulting assembly. | 10-28-2010 |
20110068149 | Solder preform and a process for its manufacture - A mixed mother alloy is prepared from a solder mixture comprising a pyrolyzable flux and high melting point metal particles, the mixed mother alloy is charged into a large amount of molten solder and stirred, and a billet is prepared. The billet can then be extruded, rolled, and punched to form a pellet or a washer, for example. | 03-24-2011 |
Patent application number | Description | Published |
20110198002 | HIGH-STRENGTH GALVANIZED STEEL SHEET WITH EXCELLENT FORMABILITY AND METHOD FOR MANUFACTURING THE SAME - A high-strength galvanized steel sheet has excellent mechanical properties such as a TS of 1200 MPa or more, an El of 13% or more, and a hole expansion ratio of 50% or more and a method for manufacturing the same. A high-strength galvanized steel sheet excellent in formability contains 0.05% to 0.5% C, 0.01% to 2.5% Si, 0.5% to 3.5% Mn, 0.003% to 0.100% P, 0.02% or less S, and 0.010% to 0.5% Al on a mass basis, the remainder being Fe and unavoidable impurities, and has a microstructure which contains 0% to 10% ferrite, 0% to 10% martensite, and 60% to 95% tempered martensite on an area basis as determined by structure observation and which further contains 5% to 20% retained austenite as determined by X-ray diffractometry. | 08-18-2011 |
20130202801 | PRODUCTION METHOD OF HOT ROLLED STEEL SHEET AND PRODUCTION METHOD OF HOT-DIP GALVANIZED STEEL SHEET - A method for producing a hot rolled steel sheet includes a slab heating step of heating a steel slab in a slab heating furnace, a step of hot-rolling the heated steel slab in a rough rolling mill to form a strip and a finish rolling mill, and a coiling step of coiling the strip around a coiler. The atmosphere in steps from the slab heating step to the coiling step is a non-oxidizing atmosphere. The slab steel contains C: 0.01-0.15%, Si: 0.1-1.8%, Mn: 1.0-2.7%, Al: 0.01-1.5%, P: 0.005-0.025%, and S: 0.01% or less, by mass. A hot-dip galvanized steel sheet is produced by pickling the hot rolled steel sheet to remove mill scale, or by pickling the sheet and further cold-rolling the sheet, and subsequently by subjecting the resultant to hot-dip galvanizing. | 08-08-2013 |
20140314616 | HOT-ROLLED STEEL SHEET FOR HIGH-STRENGTH GALVANIZED STEEL SHEET OR HIGH-STRENGTH GALVANNEALED STEEL SHEET AND METHOD FOR MANUFACTURING THE SAME (AS AMENDED) - Provided is a hot-rolled steel sheet having a composition containing 0.04 mass percent to 0.20 mass percent C, 0.7 mass percent to 2.3 mass percent Si, 0.8 mass percent to 2.8 mass percent Mn, 0.1 mass percent or less P, 0.01 mass percent or less S, 0.1 mass percent or less Al, and 0.008 mass percent or less N, the remainder being Fe and inevitable impurities. Internal oxides containing one or more selected from the group consisting of Si, Mn, and Fe are present at grain boundaries and in grains in a base metal. The internal oxides present at the grain boundaries in the base metal are located within 5 μm from the surface of the base metal. The difference between the depths at which the internal oxides are formed in the cross direction of the steel sheet is 2 μm or less. | 10-23-2014 |
20140377584 | HIGH-STRENGTH HOT-DIPPED GALVANIZED STEEL SHEET HAVING EXCELLENT FORMABILITY AND IMPACT RESISTANCE, AND METHOD FOR PRODUCING SAME - A galvanized steel sheet has a composition containing, by mass %, C: 0.05% or more and 0.5% or less, Si: 0.01% or more and 2.5% or less, Mn: 0.5% or more and 3.5% or less, P: 0.003% or more and 0.100% or less, S: 0.02% or less, Al: 0.010% or more and 0.5% or less, B: 0.0002% or more and 0.005% or less, Ti: 0.05% or less, a relationship of Ti>4N being satisfied, and the balance comprising Fe and inevitable impurities, and a microstructure containing 60% or more and 95% or less of tempered martensite in terms of area ratio and 5% or more and 20% or less of retained austenite in terms of area ratio, or further containing 10% or less (including 0%) of ferrite in terms of area ratio and/or 10% or less (including 0%) of martensite in terms of area ratio, the tempered martensite having an average grain diameter of 5 μm or less. | 12-25-2014 |
20150017474 | HIGH STRENGTH GALVANIZED STEEL SHEET AND METHOD FOR MANUFACTURING THE SAME - A high strength galvanized steel sheet has a composition including, C: 0.02% or more and 0.30% or less, Si: 0.01% or more and 2.5% or less, Mn: 0.1% or more and 3.0% or less, P: 0.003% or more and 0.08% or less, S: 0.01% or less, Al: 0.001% or more and 0.20% or less, Ti: 0.03% or more and 0.40% or less and the balance being Fe and inevitable impurities, and a zinc-coated layer having a coating weight per surface of 20 g/m | 01-15-2015 |
20150184273 | GALVANNEALED STEEL SHEET WITH EXCELLENT ANTI-POWDERING PROPERTY (AS AMENDED) - Provided is a galvannealed steel sheet with excellent anti-powdering property when press forming is performed, without controlling the contents of chemical elements in steel which are effective for strengthening a steel sheet, such as Si and P, to be low in order to achieve required material properties and without increasing cost due to, for example, processes being complicated. A galvannealed steel sheet with excellent anti-powdering property has a coated layer taking in grains of a base steel sheet such that the grains constitute 2.0% or more and 15.0% or less of the coated layer in terms of cross section area ratio. | 07-02-2015 |
20150315692 | METHOD FOR MANUFACTURING GALVANIZED STEEL SHEET - A method for manufacturing a galvanized steel sheet includes heating a base steel sheet in a heating zone such that the surface of the base steel sheet is heated at a temperature of 600° C. or higher and 790° C. or lower while a furnace temperature T° C. in the heating zone of an annealing furnace is controlled based on the water vapor partial pressure P | 11-05-2015 |
Patent application number | Description | Published |
20120018060 | HIGH-STRENGTH GALVANIZED STEEL SHEET AND METHOD FOR MANUFACTURING THE SAME - Provided is a method for manufacturing a high-strength galvanized steel sheet, made from a steel sheet containing Si and/or Mn, having excellent exfoliation resistance during heavy machining. When a steel sheet containing 0.01% to 0.18% C, 0.02% to 2.0% Si, 1.0% to 3.0% Mn, 0.001% to 1.0% Al, 0.005% to 0.060% P, and 0.01% or less S on a mass basis, the remainder being Fe and unavoidable impurities, is annealed and galvanized in a continuous galvanizing line, a temperature region with a furnace temperature of A° C. to B° C. (600≦A≦780 and 800≦B≦900) is performed at an atmosphere dew-point temperature of −5° C. or higher in a heating process. | 01-26-2012 |
20120325376 | HIGH-STRENGTH COLD-ROLLED STEEL SHEET AND METHOD FOR PRODUCING THE SAME - A high-strength cold-rolled steel sheet having high chemical convertibility and a tensile strength of 590 MPa or more and a method for producing such a steel sheet are provided. The steel sheet contains, in terms of percent by mass, C: 0.05 to 0.3%, Si: 0.6 to 3.0%, Mn: 1.0 to 3.0%, P: 0.1% or less, S: 0.05% or less, Al: 0.01 to 1%, N: 0.01% or less, and the balance being Fe and unavoidable impurities. The coverage ratio of reduced iron on a steel sheet surface is 40% or more. In order to produce such a steel sheet, an oxidation treatment is performed after cold rolling. Subsequently, annealing is conducted in a furnace in a 1 to 10 vol % H | 12-27-2012 |
20130174946 | HIGH STRENGTH STEEL SHEET AND METHOD FOR MANUFACTURING THE SAME - A method for manufacturing such steel sheet includes continuous annealing of a steel sheet which includes, in terms of mass %, C at 0.01 to 0.18%, Si at 0.4 to 2.0%, Mn at 1.0 to 3.0%, Al at 0.001 to 1.0%, P at 0.005 to 0.060% and S at ≦0.01%, the balance being represented by Fe and inevitable impurities, in such a manner that the dew point of the atmosphere is controlled to become not more than −45° C. during the course of soaking when the annealing furnace inside temperature is in the range of not less than 820° C. and not more than 1000° C. as well as that the dew point of the atmosphere is controlled to become not more than −45° C. during the course of cooling when the annealing furnace inside temperature is in the range of not less than 750° C. | 07-11-2013 |
20130306203 | HIGH STRENGTH STEEL SHEET AND METHOD FOR MANUFACTURING THE SAME - The invention provides a high strength steel sheet which exhibits excellent chemical convertibility and corrosion resistance after electrodeposition coating even in the case where the steel sheet has a high Si content, and a method for manufacturing such steel sheets. The method includes continuous annealing of a steel sheet which includes, in terms of mass %, C at 0.01 to 0.18%, Si at 0.4 to 2.0%, Mn at 1.0 to 3.0%, Al at 0.001 to 1.0%, P at 0.005 to 0.060% and S at ≦0.01%, the balance being represented by Fe and inevitable impurities, while controlling the dew-point temperature of the atmosphere to become not more than −40° C. when the annealing furnace inside temperature is in the range of not less than 750° C. | 11-21-2013 |
20130327452 | HIGH STRENGTH STEEL SHEET AND METHOD FOR MANUFACTURING THE SAME - The invention provides a high strength steel sheet which exhibits excellent chemical convertibility and corrosion resistance after electrodeposition coating even in the case where the steel sheet has a high Si content, and a method for manufacturing such steel sheets. The method includes continuous annealing of a steel sheet which includes, in terms of mass %, C at 0.01 to 0.18%, Si at 0.4 to 2.0%, Mn at 1.0 to 3.0%, Al at 0.001 to 1.0%, P at 0.005 to 0.060% and S at ≦0.01%, the balance being represented by Fe and inevitable impurities, while controlling the dew-point temperature of the atmosphere to become not less than −10° C. when the heating furnace inside temperature is in the range of not less than A° C. and not more than B° C. during the course of heating (A: 600≦A≦780, B: 800≦B≦900). | 12-12-2013 |
Patent application number | Description | Published |
20100112377 | GALVANIZED HIGH STRENGTH STEEL SHEET AND METHOD FOR PRODUCING THEREOF - A high-strength galvanized steel sheet is provided which has a tensile strength of a level of about 590 MPa and superior formability, including a coating with good appearance. The galvanized steel sheet includes a base steel and a galvanized coating layer formed over the surface of the base steel. The galvanized steel sheet has a chemical composition containing 0.005% to 0.12% of C, 0.7% to 2.7% of Si, 0.5% to 2.8% of Mn, 0.1% or less of P, 0.07% or less of S, 1.0% or less of Al, 0.008% or less of N, and the balance being Fe and inevitable impurities on a mass basis, and a microstructure constituted of at least 90% of ferrite and 2% to 10% of martensite on an area basis. The ferrite has a Vickers hardness of 120 or more on average, and an inclusion is precipitated from the grain boundary with a length of 50% or less relative to the entire length of the grain boundary in the surface layer of the base steel with a depth of 3 μm from the interface between the coating layer and the base steel. | 05-06-2010 |
20120090737 | HIGH-STRENGTH HOT-DIP GALVANIZED STEEL SHEET AND METHOD FOR PRODUCING SAME - A method for producing a high-strength hot-dip galvanized steel sheet includes a steel sheet containing, in percent by mass, 0.01% to 0.18% of C, 0.02% to 2.0% of Si, 1.0% to 3.0% of Mn, 0.001% to 1.0% of Al, 0.005% to 0.060% of P, 0.01% or less of S, and the balance being Fe and incidental impurities, and a galvanized coating layer on each surface of the steel sheet with a coating weight of 20 to 120 g/m | 04-19-2012 |
20120118438 | HIGH-STRENGTH GALVANNEALED STEEL SHEET HAVING EXCELLENT FORMABILITY AND FATIGUE RESISTANCE AND METHOD FOR MANUFACTURING THE SAME - The present invention provides a high-strength galvanized steel sheet having excellent ductility, stretch flangeability, and fatigue resistance, and a method for manufacturing the same. A high-strength galvannealed steel sheet having excellent formability and fatigue resistance is characterized in that the steel sheet is composed of steel having a composition containing, by % by mass, C: 0.05% to 0.3%, Si: 0.5% to 2.5%, Mn: 1.0% to 3.5%, P: 0.003% to 0.100%, S: 0.02% or less, Al: 0.010% to 0.1%, and the balance including iron and unavoidable impurities, and the steel sheet has a microstructure containing 50% or more of ferrite, 5% to 35% of martensite, and 2% to 15% of pearlite in terms of an area ratio, the martensite having an average gain size of 3 μm or less and an average distance of 5 μm or less between adjacent martensite grains. | 05-17-2012 |
20140174608 | METHOD FOR MANUFACTURING HIGH STRENGTH GALVANIZED STEEL SHEET HAVING EXCELLENT STABILITY OF MECHANICAL PROPERTIES, FORMABILITY, AND COATING APPEARANCE - A method of manufacturing a high strength galvanized steel sheet has a first heating step including heating to 400° C. to 750° C. in an atmosphere containing O | 06-26-2014 |
20140220382 | HIGH STRENGTH GALVANIZED STEEL SHEET EXCELLENT IN TERMS OF COATING ADHESIVENESS AND METHOD FOR MANUFACTURING THE SAME - A high strength galvanized steel sheet excellent in coating adhesiveness is made from a base material that is a high strength steel sheet containing Si, Mn, and Cr. A method includes performing an oxidation treatment on steel containing Si, Mn, and Cr in an oxidation furnace under the condition that a selected exit temperature T, reduction annealing and a galvanizing treatment, or optionally, further an alloying treatment under conditions that heating is performed at a temperature of 460° C. or higher and 600° C. or lower for an alloying treatment time of 10 seconds or more and 60 seconds or less. | 08-07-2014 |
Patent application number | Description | Published |
20100104891 | ZINC-PLATED HIGH-TENSION STEEL SHEET EXCELLENT IN PRESS FORMABILITY AND METHOD FOR PRODUCTION THEREOF - A high-strength galvanized steel sheet having excellent formability contains as a chemical component of steel on a mass percent basis: 0.05% to 0.3% of C; more than 0.60% to 2.0% of Si; 0.50% to 3.50% of Mn; 0.003% to 0.100% of P; 0.010% or less of S; 0.010% to 0.06% of Al; 0.007% or less of N; and the balance including Fe and inevitable impurities, and in the microstructure of the steel sheet, the standard deviation of nano-hardness is 1.50 GPa or less. | 04-29-2010 |
20100314009 | HIGH STRENGTH GALVANIZED STEEL SHEET EXCELLENT IN FORMABILITY AND METHOD FOR MANUFACTURING THE SAME - A high strength galvanized steel sheet having a TS of 780 MPa or more and exhibiting excellent stretch frangeability and bendability and a method for manufacturing the same are provided. The component composition contains C: 0.05% to 0.15%, Si: 0.8% to 2.5%, Mn: 1.5% to 3.0%, P: 0.001% to 0.05%, S: 0.0001% to 0.01%, Al: 0.001% to 0.1%, N: 0.0005% to 0.01%, Cr: 0.1% to 1.0%, Ti: 0.0005% to 0.1%, B: 0.0003% to 0.003%, and the remainder composed of iron and incidental impurities, on a percent by mass basis. The microstructure includes 30% or more of ferrite phase and 30% or more, and 70% or less of martensite phase on an areal fraction basis, wherein regarding the above-described martensite phase, the proportion of a tempered martensite phase is 20% or more relative to the whole martensite phase and the proportion of a martensite phase having a grain diameter of 1 μm or less is 10% or less relative to the whole martensite phase. | 12-16-2010 |
20110008546 | PROCESSES FOR PRODUCING HIGH-STRENGTH HOT-DIP GALVANIZED STEEL SHEET AND HIGH-STRENGTH GALVANNEALED STEEL SHEET - A method for manufacturing a high strength hot-dip galvanized steel sheet includes: heating a steel sheet in a CGL, the steel sheet including on a mass percent basis, as chemical components, 0.005% to 0.12% of C, 0.7% to 1.8% of Si, 0.5% to 2.8% of Mn, 0.1% or less of P, 0.07% or less of S, 1.0% or less of Al, 0.008% or less of N, and the balance being Fe and incidental impurities; annealing at 700-940° C. for 15-600 seconds; cooling to 440-550° C. at 3° C./s or more; dipping the steel sheet at 440-550° C. into a hot-dip galvanizing bath at a temperature of 440 to 500° C. for 200 seconds or less to perform hot-dip galvanizing. By the method described above, a high strength hot-dip galvanized steel sheet having a tensile strength level of 590 MPa, which has good coating appearance and superior formability, is obtained. | 01-13-2011 |
20110139315 | HIGH STRENGTH GALVANIZED STEEL SHEET WITH EXCELLENT FORMABILITY AND METHOD FOR MANUFACTURING THE SAME - A high-strength galvanized steel sheet has a TS of at least 590 MPa and excellent ductility and stretch flangeability and a method for manufacturing the high-strength galvanized steel sheet. The galvanized steel sheet contains, on the basis of mass percent, C: 0.05% to 0.3%, Si: 0.01% to 2.5%, Mn: 0.5% to 3.5%, P: 0.003% to 0.100% or less, S: 0.02% or less, and Al: 0.010% to 1.5%. The total of Si and Al is 0.5% to 2.5%. The remainder are iron and incidental impurities, contain 20% or more of ferrite phase, 10% or less of martensite phase, and 10% to 60% of tempered martensite, on the basis of area percent, and 3% to 10% of retained austenite phase on the basis of volume fraction. The retained austenite has an average grain size of 2.0 μm or less. | 06-16-2011 |
20140182748 | METHOD FOR MANUFACTURING HIGH STRENGTH GALVANIZED STEEL SHEET WITH EXCELLENT FORMABILITY - A method of manufacturing a high-strength galvanized steel sheet includes hot-rolling a slab to form a steel sheet; during continuous annealing, heating the steel sheet to a temperature of 750° C. to 900° C. at an average heating rate of at least 10° C./s at a temperature of 500° C. to an A | 07-03-2014 |
20140209217 | HIGH-STRENGTH GALVANNEALED STEEL SHEET HAVING EXCELLENT FORMABILITY AND FATIGUE RESISTANCE AND METHOD FOR MANUFACTURING THE SAME - The present invention provides a high-strength galvanized steel sheet having excellent ductility, stretch flangeability, and fatigue resistance, and a method for manufacturing the same. A high-strength galvannealed steel sheet having excellent formability and fatigue resistance is characterized in that the steel sheet is composed of steel having a composition containing, by % by mass, C: 0.05% to 0.3%, Si: 0.5% to 2.5%, Mn: 1.0% to 3.5%, P: 0.003% to 0.100%, S: 0.02% or less, Al: 0.010% to 0.1%, and the balance including iron and unavoidable impurities, and the steel sheet has a microstructure containing 50% or more of ferrite, 5% to 35% of martensite, and 2% to 15% of pearlite in terms of an area ratio, the martensite having an average gain size of 3 μm or less and an average distance of 5 μm or less between adjacent martensite grains. | 07-31-2014 |
20140342182 | GALVANNEALED STEEL SHEET HAVING HIGH CORROSION RESISTANCE AFTER PAINTING - A galvannealed steel sheet having high corrosion resistance after painting, includes, on a mass percent basis, C: 0.05% to 0.30%, Si: 1.0% to 3.0%, Mn: 0.5% to 3.0%, Al: 0.01% to 3.00%, S: 0.001% to 0.010%, and P: 0.001% to 0.100% as chemical components, the remainder being Fe and incidental impurities, wherein the steel sheet includes a galvannealed layer on a surface thereof, the galvannealed layer containing Fe: 7% to 15% and Al: 0.02% to 0.30% and a remainder being Zn and incidental impurities, the percentage of exposed Zn metal of the galvannealed layer surface being 20% or more. | 11-20-2014 |
20150337427 | HOT DIP GALVANIZED STEEL SHEET - A hot dip galvanized steel sheet includes a steel sheet, a hot dip galvanizing layer, and an intermetallic compound, in which the steel sheet has a chemical composition containing, by mass %, C: 0.03% or more and 0.70% or less, Si: 0.10% or less, Mn: 0.5% or more and 0.9% or less, P: 0.020% or more and 0.050% or less, S: 0.010% or less, Nb: 0.010% or more and 0.035% or less, N: 0.005% or less, Al: 0.10% or less, and the balance being Fe and inevitable impurities, in which the hot dip galvanizing layer contains 0.3% or more and 0.6% or less of Al, and in which the intermetallic compound contains 0.12 gm | 11-26-2015 |
20160102379 | METHOD FOR MANUFACTURING HIGH-STRENGTH GALVANNEALED STEEL SHEET - There is provided a method for manufacturing a high-strength galvannealed steel sheet having excellent coating adhesiveness and corrosion resistance whose base material is a high-strength steel sheet containing Si and Mn. The method includes performing an oxidation treatment on a steel sheet including Si and Mn in a first zone having an atmosphere of an oxygen concentration, thereafter performing an oxidation treatment in a second zone having an atmosphere of an oxygen concentration, thereafter performing reduction annealing and galvanizing, and further performing an alloying treatment by heating the galvanized steel sheet. | 04-14-2016 |
Patent application number | Description | Published |
20090312987 | Ambient Light Sensor and Electronic Equipment - An ambient light sensor ( | 12-17-2009 |
20110260629 | Illuminance Sensor, and Electronic Equipment and Semiconductor Device Using the Same - In an illuminance sensor, a photoelectric converter ( | 10-27-2011 |
20120206414 | MOBILE DEVICE - Disclosed is a mobile device comprising an acceleration detection unit for detecting acceleration relative to the device; a condition identification unit; and a power supply controller which determines, from a combination of the output of the acceleration detection unit and the output of the condition identification unit, whether or not to begin to supply power to the device. | 08-16-2012 |
20150076642 | PHOTODETECTION DEVICE AND SENSOR PACKAGE - A photodetection device of the present invention includes a semiconductor substrate which is defined such that a first light-receiving portion and a second light-receiving portion are spaced from one another, and an optical filter which is formed on the semiconductor substrate, and includes a first filter which is disposed so as to cover the first light-receiving portion, to selectively allow an optic element in a first wavelength band to transmit through, and a second filter which is disposed so as to cover the second light-receiving portion, to selectively allow an optic element in a second wavelength band different from the first wavelength band, to transmit through, and the optical filter has a filter laminated structure which is defined such that edge portions of the first filter and the second filter overlap one another on a boundary region between the first light-receiving portion and the second light-receiving portion. | 03-19-2015 |
20150083915 | OPTICAL SENSOR DEVICE - An optical sensor device includes at least two light receiving units in which a plurality of types of light receiving elements is integrated in the same vertical structure. In addition, the optical sensor device further includes a switch unit configured to select at least one of the light receiving elements in each of the light receiving units in a time-division manner. | 03-26-2015 |
20150084904 | Mobile Device - Disclosed is a mobile device comprising an acceleration detection unit for detecting acceleration relative to the device; a condition identification unit; and a power supply controller which determines, from a combination of the output of the acceleration detection unit and the output of the condition identification unit, whether or not to begin to supply power to the device. | 03-26-2015 |
20160005779 | PHOTODETECTION DEVICE AND SENSOR PACKAGE - A photodetection device of the present invention includes a semiconductor substrate which is defined such that a first light-receiving portion and a second light-receiving portion are spaced from one another, and an optical filter which is formed on the semiconductor substrate, and includes a first filter which is disposed so as to cover the first light-receiving portion, to selectively allow an optic element in a first wavelength band to transmit through, and a second filter which is disposed so as to cover the second light-receiving portion, to selectively allow an optic element in a second wavelength band different from the first wavelength band, to transmit through, and the optical filter has a filter laminated structure which is defined such that edge portions of the first filter and the second filter overlap one another on a boundary region between the first light-receiving portion and the second light-receiving portion. | 01-07-2016 |
20160113585 | Pulse Wave Sensor and Semiconductor Module - A pulse wave sensor includes: a white LED emitting white light to a human body; a G sensor converting, into a first electrical signal, green light included in light emitted from the white LED and reflected within the human body; an R sensor converting, into a second electrical signal, red light included in the light emitted from the white LED and reflected within the human body; and an arithmetic control unit configured to generate a signal showing a heart rate based on a level difference between the first electrical signal and the second electrical signal. Therefore, a distance between the G sensor and the R sensor does not have to be increased, so that an apparatus can be reduced in size. | 04-28-2016 |
Patent application number | Description | Published |
20090218578 | SEMICONDUCTOR DEVICE - A semiconductor device comprises an AlN layer, a GaN layer, and an AlGaN layer sequentially formed on a semiconductor substrate. A first opening extends through said GaN layer and said AlGaN layer and exposes part of an upper surface of the AlN layer. A second opening extends through the semiconductor substrate and exposes a part of a lower surface of the AlN layer, in a location facing the first opening. A upper electrode is exposed on an upper surface of the AlN layer in the first opening; and a lower electrode is disposed on a lower surface of the AlN layer in the second opening. | 09-03-2009 |
20100244041 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - An isolation layer for suppressing a leakage current is provided at least between a channel layer and a buffer layer formed under the channel layer in the buffer layer. | 09-30-2010 |
20110006351 | SEMICONDUCTOR DEVICE - A semiconductor device includes: a semiconductor substrate; an impurity-doped region at a top surface of the semiconductor substrate; an insulating region located around the impurity-doped region on the top surface of the semiconductor substrate; a gate electrode on the impurity-doped region; a first electrode and a second electrode located on the impurity-doped region, sandwiching the gate electrode; a first pad located on the insulating region and connected to the gate electrode; a second pad facing the first pad across the impurity-doped region, on the insulating region, and connected to the second electrode; and a conductor located between the first electrode and the second pad on the insulating region. | 01-13-2011 |
20130056875 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor device includes: a semiconductor substrate having a main surface; an electrode in a device region on the main surface; a metal wiring on the main surface and having a first end connected to the electrode; an electrode pad outside the device region and spaced from the metal wiring; an air gap between the main surface and an air gap forming film on the main surface, enveloping the first end of the metal wiring and the electrode, and having a first opening; a resin closing the first opening and covering a second end of the metal wiring; a liquid repellent film facing the air gap and increasing contact angle of the resin, when liquid, relative to contact angles on the semiconductor substrate and the air gap forming film; and a metal film connecting the metal wiring to the electrode pad through a second opening located in the resin. | 03-07-2013 |
20140077280 | SEMICONDUCTOR DEVICE - A semiconductor device includes: a substrate; a semiconductor element on the substrate; an interconnection on the substrate and electrically connected to the semiconductor element; a window frame member on the substrate, surrounding the semiconductor element, and in contact with the interconnection; and a sealing window bonded to the window frame member and encapsulating the semiconductor element. The window frame member is a low melting glass and has a sheet resistance of 10 | 03-20-2014 |
20140134835 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A method of manufacturing a semiconductor device includes forming a first layer on a semiconductor layer, forming a second layer on the first layer, forming a patterned mask on the second layer, etching and removing a portion of the second layer that is not covered by the patterned mask, wet etching the first layer to a width which is less than the width of the patterned mask, after the wet etching, forming an insulating layer on the semiconductor layer, removing the first layer and the second layer to form an opening in the insulating layer, and forming a gate electrode on a surface of the semiconductor layer exposed through the opening. | 05-15-2014 |
20140175615 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A method for manufacturing a semiconductor device includes: forming a semiconductor element on a main surface of a substrate; forming a low melting glass film having a melting point of 450° C. or less on the main surface and the semiconductor element; heat treating the substrate while pressing the low melting glass film toward the main surface of the substrate with a pressurizing jig that is insulating or semi-insulating, and sintering the low melting glass film; and leaving the pressurizing jig on the low melting glass film after sintering the low melting glass film. | 06-26-2014 |
20140353674 | SEMICONDUCTOR DEVICE - A semiconductor device includes a substrate, a buffer layer of GaN containing at least one of Fe and C and disposed on the substrate, a channel layer of GaN disposed on the buffer layer and through which electrons travel, an electron supply layer disposed on the channel layer and producing a two-dimensional electron gas in the channel layer, a gate electrode, a drain electrode, and a source electrode. Recovery time of a drain current of the semiconductor device is no more than 5 seconds, where the recovery time is defined as the period of time after the semiconductor device is stopped from outputting high frequency power until the change in the drain current, after the stopping of the semiconductor device, reaches 95% of the change in the drain current occurring during the first 10 seconds after the stopping of the semiconductor device. | 12-04-2014 |
20150054137 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor device includes a semiconductor substrate having opposed main and back surfaces; first and second electrodes in a device region of the substrate, and spaced apart from each other; a metal film on the main surface and joined to the second electrode; an air gap between part of the main surface and the metal film, enveloping the first electrode, and having an opening; a cured resin closing the opening; a liquid repellent film increasing contact angle of the resin, relative to contact angles on the substrate and the metal film; a first metal film joined to the metal film, covering the metal film and the cured resin, and joined to an outer peripheral region of the substrate, at a periphery of the device region; and a second metal film on the back surface and connected to the first electrode through a via hole penetrating the substrate. | 02-26-2015 |
20150243530 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A plurality of semiconductor element is formed on a substrate. A plurality of sealing windows and a support portion supporting the plurality of sealing windows are formed on a SOI substrate. The SOI substrate is pressured against the substrate by using a pressurizing member and the plurality of sealing windows of the SOI substrate is bonded to the substrate via a low melting point glass member arranged around the plurality of semiconductor elements. The support portion is separated from the plurality of sealing windows bonded to the substrate. | 08-27-2015 |