Patent application number | Description | Published |
20090014710 | NONVOLATILE MEMORY ELEMENT, NONVOLATILE MEMORY APPARATUS, AND METHOD OF MANUFACTURE THEREOF - A lower electrode layer | 01-15-2009 |
20100061142 | MEMORY ELEMENT AND MEMORY APPARATUS - Memory elements ( | 03-11-2010 |
20100090193 | NONVOLATILE MEMORY ELEMENT ARRAY AND MANUFACTURING METHOD THEREOF - A lower electrode ( | 04-15-2010 |
20100190313 | METHOD FOR MANUFACTURING NONVOLATILE STORAGE ELEMENT AND METHOD FOR MANUFACTURING NONVOLATILE STORAGE DEVICE - A method for manufacturing a nonvolatile storage element that minimizes shape shift between an upper electrode and a lower electrode, and which includes: depositing, in sequence, a connecting electrode layer which is conductive, a lower electrode layer and a variable resistance layer which are made of a non-noble metal nitride and are conductive, an upper electrode layer made of noble metal, and a mask layer; forming the mask layer, into a predetermined shape; forming the upper electrode layer, the variable resistance layer, and the lower electrode layer into the predetermined shape by etching using the mask layer as a mask; and removing, simultaneously, the mask and a region of the connecting electrode layer that has been exposed by the etching. | 07-29-2010 |
20100200852 | NONVOLATILE MEMORY ELEMENT, NONVOLATILE MEMORY APPARATUS, AND METHOD OF MANUFACTURE THEREOF - A lower electrode layer | 08-12-2010 |
20100225438 | VARIABLE RESISTANCE ELEMENT, SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING VARIABLE RESISTANCE ELEMENT - A method for manufacturing a variable resistance element includes the steps of: depositing a variable resistance material ( | 09-09-2010 |
20100237313 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD THEREOF - A nonvolatile semiconductor memory device of the present invention includes a substrate ( | 09-23-2010 |
20100264392 | NONVOLATILE MEMORY APPARATUS AND MANUFACTURING METHOD THEREOF - A nonvolatile memory device includes via holes ( | 10-21-2010 |
20100283026 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD THEREOF - A first wire layer ( | 11-11-2010 |
20110114912 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD THEREOF - A nonvolatile semiconductor memory device ( | 05-19-2011 |
20110220861 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD THEREOF - A nonvolatile semiconductor memory device which can achieve miniaturization and a larger capacity in a cross-point structure in which memory cells are formed inside contact holes at cross points of word lines and bit lines, respectively, and a manufacturing method thereof are provided. A nonvolatile semiconductor memory device comprises a substrate; a plurality of stripe-shaped lower copper wires ( | 09-15-2011 |
20110220862 | RESISTANCE VARIABLE ELEMENT AND RESISTANCE VARIABLE MEMORY DEVICE - A resistance variable element ( | 09-15-2011 |
20110220863 | NONVOLATILE MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME - To realize miniaturization and increased capacity of memories by lowering break voltage for causing resistance change and suppressing variation in break voltage. | 09-15-2011 |
20110233511 | NONVOLATILE MEMORY ELEMENT AND MANUFACTURING METHOD THEREOF - A nonvolatile memory element ( | 09-29-2011 |
20120063201 | NONVOLATILE MEMORY ELEMENT, PRODUCTION METHOD THEREFOR, DESIGN SUPPORT METHOD THEREFOR, AND NONVOLATILE MEMORY DEVICE - A nonvolatile memory element which can be initialized at low voltage includes a variable resistance layer ( | 03-15-2012 |
20120068148 | NONVOLATILE MEMORY ELEMENT AND FABRICATION METHOD FOR NONVOLATILE MEMORY ELEMENT - A variable resistance nonvolatile memory element capable of suppressing a variation in resistance values is provided. A nonvolatile memory element according to the present invention includes: a silicon substrate ( | 03-22-2012 |
20120091425 | NONVOLATILE MEMORY DEVICE AND MANUFACTURING METHOD THEREOF - A nonvolatile memory device ( | 04-19-2012 |
20120097915 | NONVOLATILE MEMORY DEVICE AND MANUFACTURING METHOD THEREOF - There are provided a resistance variable nonvolatile memory device which changes its resistance stably at low voltages and is suitable for a miniaturized configuration, and a manufacturing method thereof. The nonvolatile memory device comprises: a substrate ( | 04-26-2012 |
20120238055 | METHOD FOR MANUFACTURING NONVOLATILE SEMICONDUCTOR MEMORY ELEMENT - An object of the present invention is to provide a method for manufacturing a variable resistance nonvolatile semiconductor memory element which can operate at a low voltage and high speed when initial breakdown is caused, and inhibit oxidization of a contact plug. The method for manufacturing the variable resistance nonvolatile semiconductor memory element, which includes a bottom electrode, a variable resistance layer, and a top electrode which are formed above a contact plug, includes oxidizing to insulate an end portion of the variable resistance layer prior to forming a bottom electrode by patterning a first conductive film. | 09-20-2012 |
20120252184 | VARIABLE RESISTANCE ELEMENT AND MANUFACTURING METHOD THEREOF - A variable resistance element comprises, when M is a transition metal element, O is oxygen, and x and y are positive numbers satisfying y>x; a lower electrode; a first oxide layer formed on the lower electrode and comprising MO | 10-04-2012 |
20120298945 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD THEREOF - A nonvolatile semiconductor memory device of the present invention includes a substrate ( | 11-29-2012 |
20130015423 | METHOD FOR MANUFACTURING NONVOLATILE SEMICONDUCTOR MEMORY ELEMENT, AND NONVOLATILE SEMICONDUCTOR MEMORY ELEMENTAANM Mikawa; TakumiAACI ShigaAACO JPAAGP Mikawa; Takumi Shiga JPAANM Hayakawa; YukioAACI KyotoAACO JPAAGP Hayakawa; Yukio Kyoto JPAANM Kawashima; YoshioAACI OsakaAACO JPAAGP Kawashima; Yoshio Osaka JPAANM Ninomiya; TakekiAACI OsakaAACO JPAAGP Ninomiya; Takeki Osaka JP - Provided is a method for manufacturing a variable resistance nonvolatile semiconductor memory element, and a nonvolatile semiconductor memory element which make it possible to operate at a low voltage and high speed when initial breakdown is caused, and exhibit favorable diode element characteristics. The method for manufacturing the nonvolatile semiconductor memory element includes, after forming a top electrode of a variable resistance element and at least before forming a top electrode of an MSM diode element, oxidizing to insulate a portion of a variable resistance film in a region around an end face of a variable resistance layer. | 01-17-2013 |
20130092893 | NONVOLATILE MEMORY ELEMENT AND METHOD FOR MANUFACTURING SAME - The method includes: forming a lower electrode layer above a substrate; forming a variable resistance layer on the lower electrode layer; forming an upper electrode layer on the variable resistance layer; forming a hard mask layer on the upper electrode layer; forming a photoresist mask on the hard mask layer; forming a hard mask by performing etching on the hard mask layer using the photoresist mask; and forming a nonvolatile memory element by performing etching on the upper electrode layer, the variable resistance layer, and the lower electrode layer, using the hard mask. In the forming of a photoresist mask, the photoresist mask is formed to have corner portions which recede toward the center portion in planar view. | 04-18-2013 |
20130112936 | RESISTANCE CHANGE ELEMENT AND MANUFACTURING METHOD THEREFOR - A variable resistance element including: a first electrode; a second electrode; and a variable resistance layer having a resistance value which reversibly changes according to electrical signals applied, wherein the variable resistance layer includes a first variable resistance layer comprising a first oxygen-deficient transition metal oxide, and a second variable resistance layer comprising a second transition metal oxide having a degree of oxygen deficiency lower than a degree of oxygen deficiency of the first transition metal oxide layer, the second electrode has a single needle-shaped part at the interface with the second variable resistance layer, and the second variable resistance layer is interposed between the first variable resistance layer and the second electrode, is in contact with the first variable resistance layer and the second electrode, and covers the needle-shaped part. | 05-09-2013 |
20130119344 | NONVOLATILE STORAGE ELEMENT AND METHOD FOR MANUFACTURING SAME - A variable resistance nonvolatile storage element includes: a first electrode; a second electrode; and a variable resistance layer having a resistance value that reversibly changes based on an electrical signal applied between the electrodes, wherein the variable resistance layer has a structure formed by stacking a first transition metal oxide layer, a second transition metal oxide layer, and a third transition metal oxide layer in this order, the first transition metal oxide layer having a composition expressed as MO | 05-16-2013 |
20130140514 | NONVOLATILE MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME - A nonvolatile memory device includes a substrate, a lower electrode formed above said substrate, a second variable resistance layer formed above said lower electrode and comprising a second transitional metal oxide, a first variable resistance layer formed above said second variable resistance layer and comprising a first transitional metal oxide having an oxygen content that is lower than an oxygen content of the second transitional metal oxide, and an upper electrode formed above said first variable resistance layer. A step is formed in an interface between said lower electrode and said second variable resistance layer. The second variable resistance layer is formed covering the step and has a bend above the step. | 06-06-2013 |
20130140515 | NONVOLATILE MEMORY ELEMENT AND METHOD OF MANUFACTURING THE SAME - A method of manufacturing a nonvolatile memory element, the method including: forming a first lower electrode layer, a current steering layer, and a first upper electrode layer; forming a second lower electrode layer, a variable resistance layer, and a second upper electrode layer on the first upper electrode layer; patterning the second upper electrode layer, the variable resistance layer, and the lower electrode layer; patterning the first upper electrode layer, the current steering layer, and first lower electrode layer to form a current steering element, using the second lower electrode layer as a mask by use of etching which is performed on the second lower electrode layer at an etching rate lower than at least etching rates at which the second upper electrode layer and the variable resistance layer are etched; and forming a variable resistance element which has an area smaller than the area of the current steering element. | 06-06-2013 |
20130149815 | NONVOLATILE MEMORY ELEMENT MANUFACTURING METHOD AND NONVOLATILE MEMORY ELEMENT - A method of manufacturing a nonvolatile memory element includes: forming a first conductive film above a substrate; forming, above the first conductive film, a first metal oxide layer and a second metal oxide layer having different degrees of oxygen deficiency and a second conductive film; forming a second electrode by patterning the second conductive film; forming a variable resistance layer by patterning the first metal oxide layer and the second metal oxide layer; removing a side portion of the variable resistance layer in a surface parallel to a main surface of the substrate to a position that is further inward than an edge of the second electrode; and forming a first electrode by patterning the first conductive film after or during the removing. | 06-13-2013 |
20140024197 | NONVOLATILE STORAGE ELEMENT AND METHOD OF MANUFACTURING THEREOF - A method of manufacturing a variable resistance nonvolatile memory element includes: forming a lower electrode layer above a substrate; forming, on the lower electrode layer, a variable resistance layer including an oxygen-deficient transition metal oxide; forming an upper electrode layer on the variable resistance layer; and forming a patterned mask on the upper electrode layer and etching the upper electrode layer, the variable resistance layer, and the lower electrode layer using the patterned mask, wherein in the etching, at least the variable resistance layer is etched using an etching gas containing bromine. | 01-23-2014 |
20140063913 | NON-VOLATILE MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME - A non-volatile memory device includes: a memory cell array including a plurality of memory cells each including a variable resistance element and a first current steering element; and a current steering element parameter generation circuit. The current steering element parameter generation circuit includes: a third line placed between a substrate and a second interlayer dielectric; a fourth line placed above the second interlayer dielectric; and a second current steering element which is connected between the third line and the fourth line without the variable resistance element being interposed therebetween when the variable resistance element is removed between the third line and the fourth line and has the same non-linear current steering characteristics as the first current steering element. | 03-06-2014 |
20140097396 | NON-VOLATILE MEMORY DEVICE AND MANUFACTURING METHOD THEREOF - A non-volatile memory device of the present invention comprises a first electrode; a variable resistance layer formed on and above the first electrode; a second electrode formed on and above the variable resistance layer; a side wall protective layer having an insulativity and covering a side wall of the first electrode, a side wall of the variable resistance layer and a side wall of the second electrode; and an electrically-conductive layer connected to the second electrode; the non-volatile memory device including a connection layer which is provided between the second electrode and the electrically-conductive layer to connect the second electrode and the electrically-conductive layer to each other, and comprises an electrically-conductive material different from a material constituting the electrically-conductive layer; | 04-10-2014 |
20140098595 | NON-VOLATILE MEMORY DEVICE - A non-volatile memory device includes: a memory cell array including a plurality of memory cells each including a first variable resistance element and a first current steering element and a parameter generation circuit including a reference cell including a second variable resistance element and a second current steering element having the same current density-voltage characteristic as that of the first current steering element, wherein a conductive shorting layer for causing short-circuiting between the electrodes is formed on the side surfaces of the second variable resistance element. | 04-10-2014 |
20140110659 | NONVOLATILE MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME - A method of manufacturing a nonvolatile memory device includes: forming a first electrode; forming, above the first electrode, a metal oxide material layer including a first metal oxide; forming a mask above part of the metal oxide material layer main surface; forming, in a region of the metal oxide material layer not covered by the mask, a high oxygen concentration region including a second metal oxide having a lower degree of oxygen deficiency than the first metal oxide; removing the mask; forming, above a first variable resistance layer including the high oxygen concentration region and a low oxygen concentration region that is a region of the metal oxide material layer other than the high oxygen concentration region, a second variable resistance layer including a third metal oxide having a lower degree of oxygen deficiency than the first metal oxide; and forming a second electrode above the second variable resistance layer. | 04-24-2014 |
20140113430 | METHOD OF MANUFACTURING SEMICONDUCTOR MEMORY DEVICE - A method of manufacturing a semiconductor device according to the present invention includes: forming a lower electrode above a substrate; forming, above the lower electrode, a first variable resistance layer comprising a first metal oxide; forming a step region in the first variable resistance layer by collision of ions excited by plasma; removing residue of the first variable resistance layer created in the forming of the step region; forming a second variable resistance layer which covers the step region of the first variable resistance layer, comprises a second metal oxide having a degree of oxygen deficiency lower than a degree of oxygen deficiency of the first metal oxide, and has a bend on a step formed along an edge of the step region; and forming an upper electrode above the second variable resistance layer. | 04-24-2014 |
20140145136 | NON-VOLATILE MEMORY DEVICE AND MANUFACTURING METHOD THEREOF - A non-volatile memory device of the present invention comprises a first electrode; a variable resistance layer formed on and above the first electrode; a second electrode formed on and above the variable resistance layer; a side wall protective layer having an insulativity and covering a side wall of the first electrode, a side wall of the variable resistance layer and a side wall of the second electrode; and an electrically-conductive layer which is in contact with the second electrode; wherein the electrically-conductive layer covers an entire of the second electrode and at least a portion of the side wall protective layer located outward relative to the second electrode, when viewed from a thickness direction; and the side wall protective layer extends across the second electrode to a position above an upper end of the second electrode such that an upper end of the side wall protective layer is located above the upper end of the second electrode, when viewed from a side. | 05-29-2014 |
20140175369 | MANUFACTURING METHOD OF NONVOLATILE MEMORY DEVICE AND NONVOLATILE MEMORY DEVICE - A method of manufacturing a non-volatile memory device comprises: forming a first electrode layer; a variable resistance material layer, a second electrode layer; and a hard mask layer, forming a first resist mask extending in a first direction on the hard mask layer; forming a first hard mask extending in the first direction by etching the hard mask layer using the first resist mask; forming a second resist mask extending in a second direction, on the first hard mask such that the width of the second resist mask is greater than the width of the first resist mask; forming a second hard mask by etching the first hard mask using the second resist mask; and forming a variable resistance element by patterning, by etching the second electrode layer, the variable resistance material layer and the first electrode layer using the second hard mask. | 06-26-2014 |
20140203234 | VARIABLE RESISTANCE NONVOLATILE MEMORY ELEMENT AND METHOD OF MANUFACTURING THE SAME - A variable resistance nonvolatile memory element includes: first and second electrode layers; a first variable resistance layer between the first and second electrode layers; and a second variable resistance layer between the second electrode layer and the first variable resistance layer and having a higher resistance value than the first variable resistance layer. When viewed in a direction perpendicular to the major surface of the second variable resistance layer, an outline of the second variable resistance layer is located inwardly of the outline of any one of the second electrode layer and the first variable resistance layer, and an outline of a face of the second variable resistance layer, the face being in contact with the first variable resistance layer is located inwardly of an outline of a face of the first variable resistance layer, the face being in contact with the second variable resistance layer. | 07-24-2014 |
20140264249 | NONVOLATILE MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME - A nonvolatile memory device includes a plurality of nonvolatile memory elements each having an upper electrode, a variable resistance layer, and a lower electrode; a first insulating layer embedding the plurality of nonvolatile memory elements, and ranging from a lowermost part of the lower electrode to a position higher than an uppermost part of the upper electrode in each of the nonvolatile memory elements; a second insulating layer being formed on the first insulating layer, and having an average size of vacancies larger than an average size of vacancies included in the first insulating layer, or having an average carbon concentration higher than an average carbon concentration of the first insulating layer; and a conductive layer penetrating the second insulating layer and a part of the first insulating layer and being connected to at least one of the upper electrodes included in the nonvolatile memory elements. | 09-18-2014 |