Patent application number | Description | Published |
20080203454 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - To provide a semiconductor device having a memory element, and which is manufactured by a simplified manufacturing process. A method of manufacturing a semiconductor device includes, forming a first insulating film to cover a first semiconductor film and a second semiconductor film; forming a first conductive film and a second conductive film over the first semiconductor film and the second semiconductor film, respectively, with the first insulating film interposed therebetween; forming a second insulating film to cover the first conductive film; forming a third conductive film selectively over the first conductive film which is formed over the first semiconductor film, with the second insulating film interposed therebetween, and doping the first semiconductor film with an impurity element with the third conductive film serving as a mask and doping the second semiconductor film with the impurity element through the second conductive film. | 08-28-2008 |
20080290393 | Nonvolatile semiconductor memory device and manufacturing method thereof, semiconductor device and manufacturing method thereof, and manufacturing method of insulating film - An object is to provide a technique to manufacture an insulating film having excellent film characteristics. In particular, an object is to provide a technique to manufacture a dense insulating film with a high withstand voltage. Moreover, an object is to provide a technique to manufacture an insulating film with few electron traps. An insulating film including oxygen is subjected to plasma treatment using a high frequency under the conditions where the electron density is 1×10 | 11-27-2008 |
20100055896 | SEMICONDUCTOR DEVICE - It is an object of the present invention to provide a volatile organic memory in which data can be written other than during manufacturing and falsification by rewriting can be prevented, and to provide a semiconductor device including such an organic memory. It is a feature of the invention that a semiconductor device includes a plurality of bit lines extending in a first direction; a plurality of word lines extending in a second direction different from the first direction; a memory cell array including a plurality of memory cells each provided at one of intersections of the bit lines and the word lines; and memory elements provided in the memory cells, wherein the memory elements include bit lines, an organic compound layer, and the word lines, and the organic compound layer includes a layer in which an inorganic compound and an organic compound are mixed. | 03-04-2010 |
20100149851 | MEMORY DEVICE AND MANUFACTURING METHOD THE SAME - A semiconductor device that can transmit and receive data without contact is popular partly as some railway passes, electronic money cards, and the like; however, it has been a prime task to provide an inexpensive semiconductor device for further popularization. In view of the above current conditions, a semiconductor device of the present invention includes a memory with a simple structure for providing an inexpensive semiconductor device and a manufacturing method thereof. A memory element included in the memory includes a layer containing an organic compound, and a source electrode or a drain electrode of a TFT provided in the memory element portion is used as a conductive layer which forms a bit line of the memory element. | 06-17-2010 |
20100273302 | MEMORY DEVICE AND MANUFACTURING METHOD THEREOF - As for a memory element implemented in a semiconductor device typified by an RFID, it is an object of the present invention to reduce manufacturing steps and to provide a memory element and a memory circuit having the element with reduced cost. It is a feature of the present invention that a memory element sandwiched between electrodes has an organic compound, and an electrode connected to a semiconductor element controlling the memory element functions as an electrode of the memory element. In addition, an extremely thin semiconductor film formed on an insulated surface is used for the memory element; therefore cost can be reduced. | 10-28-2010 |
20110210412 | MEMORY ELEMENT, MEMORY DEVICE, AND SEMICONDUCTOR DEVICE - On object of the invention is to provide a nonvolatile memory device, in which data can be added to the memory device after a manufacturing process and forgery and the like by rewriting can be prevented, and a semiconductor device including the memory device. Another object of the invention is to provide a highly-reliable, inexpensive, and nonvolatile memory device and a semiconductor device including the memory device. A memory element includes a first conductive layer, a second conductive layer, a first insulating layer with a thickness of 0.1 nm or more and 4 nm or less being in contact with the first conductive layer, and an organic compound layer interposed between the first conductive layer, the first insulating layer, and the second conductive layer. | 09-01-2011 |
20110227139 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD THEREOF, SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF, AND MANUFACTURING METHOD OF INSULATING FILM - An object is to provide a technique to manufacture an insulating film having excellent film characteristics. In particular, an object is to provide a technique to manufacture a dense insulating film with a high withstand voltage. Moreover, an object is to provide a technique to manufacture an insulating film with few electron traps. An insulating film including oxygen is subjected to plasma treatment using a high frequency under the conditions where the electron density is 1×10 | 09-22-2011 |
20110263087 | Semiconductor Device and Manufacturing Method Thereof - A semiconductor device which is formed in a self-aligned manner without causing a problem of misalignment in forming a control gate electrode and in which a leak between the control gate electrode and a floating gate electrode is not generated, and a manufacturing method of the semiconductor device are provided. A semiconductor device includes a semiconductor film, a first gate insulating film over the semiconductor film, a floating gate electrode over the first gate insulating film, a second gate insulating film which covers the floating gate electrode, and a control gate electrode over the second gate insulating film. The control gate electrode is formed so as to cover the floating gate electrode with the second gate insulating film interposed therebetween, the control gate electrode is provided with a sidewall, and the sidewall is formed on a stepped portion of the control gate electrode, generated due to the floating gate electrode. | 10-27-2011 |
20110272752 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - To provide a semiconductor device having a memory element, and which is manufactured by a simplified manufacturing process. A method of manufacturing a semiconductor device includes, forming a first insulating film to cover a first semiconductor film and a second semiconductor film; forming a first conductive film and a second conductive film over the first semiconductor film and the second semiconductor film, respectively, with the first insulating film interposed therebetween; forming a second insulating film to cover the first conductive film; forming a third conductive film selectively over the first conductive film which is formed over the first semiconductor film, with the second insulating film interposed therebetween, and doping the first semiconductor film with an impurity element with the third conductive film serving as a mask and doping the second semiconductor film with the impurity element through the second conductive film. | 11-10-2011 |
20120108029 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - It is an object of the present invention to provide a technique in which a high-performance and high reliable memory device and a semiconductor device provided with the memory device are manufactured at low cost with high yield. The semiconductor device includes an organic compound layer including an insulator over a first conductive layer and a second conductive layer over the organic compound layer including an insulator. Further, the semiconductor device is manufactured by forming a first conductive layer, discharging a composition of an insulator and an organic compound over the first conductive layer to form an organic compound layer including an insulator, and forming a second conductive layer over the organic compound layer including an insulator. | 05-03-2012 |
20120273778 | MEMORY DEVICE AND MANUFACTURING METHOD THE SAME - A semiconductor device that can transmit and receive data without contact is popular partly as some railway passes, electronic money cards, and the like; however, it has been a prime task to provide an inexpensive semiconductor device for further popularization. In view of the above current conditions, a semiconductor device of the present invention includes a memory with a simple structure for providing an inexpensive semiconductor device and a manufacturing method thereof. A memory element included in the memory includes a layer containing an organic compound, and a source electrode or a drain electrode of a TFT provided in the memory element portion is used as a conductive layer which forms a bit line of the memory element. | 11-01-2012 |
20140014953 | MEMORY DEVICE AND MANUFACTURING METHOD THE SAME - A semiconductor device that can transmit and receive data without contact is popular partly as some railway passes, electronic money cards, and the like; however, it has been a prime task to provide an inexpensive semiconductor device for further popularization. In view of the above current conditions, a semiconductor device of the present invention includes a memory with a simple structure for providing an inexpensive semiconductor device and a manufacturing method thereof. A memory element included in the memory includes a layer containing an organic compound, and a source electrode or a drain electrode of a TFT provided in the memory element portion is used as a conductive layer which forms a bit line of the memory element. | 01-16-2014 |
20140151861 | Managing Method of Building Material and Wireless Chip Applied to the Method - A lot of buildings have been built while it is concerned that a building material is used fraudulently. Therefore, the present invention provides a managing method of the material and a system thereof. The present invention provides a managing method including a step of attaching a sheet including a plurality of memories to each surface of a plurality of materials, a step of dividing the plurality of materials with the sheet in accordance with data in the memory, a step of constructing a building by using the divided material in accordance with the data in the memory, and a step of checking the data on the constructed building, which is stored in the plurality of memories. | 06-05-2014 |
20140346505 | MEMORY DEVICE AND MANUFACTURING METHOD THE SAME - A semiconductor device that can transmit and receive data without contact is popular partly as some railway passes, electronic money cards, and the like; however, it has been a prime task to provide an inexpensive semiconductor device for further popularization. In view of the above current conditions, a semiconductor device of the present invention includes a memory with a simple structure for providing an inexpensive semiconductor device and a manufacturing method thereof. A memory element included in the memory includes a layer containing an organic compound, and a source electrode or a drain electrode of a TFT provided in the memory element portion is used as a conductive layer which forms a bit line of the memory element. | 11-27-2014 |
Patent application number | Description | Published |
20090278188 | NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE - To reduce the writing and erasing voltages of a memory transistor without increasing the area of a memory cell, and to reduce the area of a memory cell without increasing the writing and erasing voltages. The memory cell includes a memory transistor having a first island-shaped semiconductor region, a floating gate and a control gate. In addition, a second island-shaped semiconductor region is formed under the floating gate with an insulating film interposed therebetween. Since the second island-shaped semiconductor region is electrically connected to the control gate, a capacitance is formed between the second island-shaped semiconductor region and the floating gate. This capacitance contributes to an increase in the coupling ratio of the memory transistor, which makes it possible to increase the coupling ratio without increasing the area of the memory cell. Furthermore, the area of the memory cell can be reduced without reducing the coupling ratio. | 11-12-2009 |
20090283812 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD THEREOF - An object is to suppress reading error even in the case where writing and erasing are repeatedly performed. Further, another object is to reduce writing voltage and erasing voltage while increase in the area of a memory transistor is suppressed. A floating gate and a control gate are provided with an insulating film interposed therebetween over a first semiconductor layer for writing operation and erasing operation and a second semiconductor layer for reading operation which are provided over a substrate; injection and release of electrons to and from the floating gate are performed using the first semiconductor layer; and reading is performed using the second semiconductor layer. | 11-19-2009 |
20100213531 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME - A nonvolatile memory element which is provided with a floating gate electrode and a high withstand voltage transistor which is provided with a thick gate insulating film are formed over one substrate without increase in a driving voltage of the nonvolatile memory element. A stacked film of a first insulating film and a second insulating film is formed between an island-like semiconductor region and a floating gate electrode of the nonvolatile memory element and between an island-like semiconductor region and a gate electrode of the transistor. The first insulating film overlapping with the floating gate electrode is removed, and the insulating film between the island-like semiconductor region and the floating gate electrode is formed thinner than the gate insulating film of the transistor. The transistor includes a conductive film which is formed in the same layer as the floating gate electrode and a conductive film which is formed in the same layer as a control gate electrode, and these two conductive films are electrically connected to each other and function as the gate electrodes of the transistor. | 08-26-2010 |
20110308590 | Photoelectric Conversion Device and Energy Conversion Layer for Photoelectric Conversion Device - A novel photoelectric conversion device in which energy of light can be effectively utilized and performance can be improved is provided. A photoelectric conversion device includes a photoelectric conversion element and an energy conversion layer provided on a light-receiving side of a photoelectric conversion layer included in the photoelectric conversion element. The energy conversion layer includes a plurality of first layers and a plurality of second layers. The first layer and the second layer are alternately stacked. The thickness of the first layer is greater than or equal to 0.5 nm and less than or equal to 10 nm, and the thickness of the second layer is greater than or equal to 0.5 nm and less than or equal to 10 nm. The second layer can be formed using a material having a larger energy band gap than that of a material used for the first layer. | 12-22-2011 |
Patent application number | Description | Published |
20080210932 | Memory Element, Memory Device, and Semiconductor Device - On object of the invention is to provide a non-volatile memory device, in which data can be added to the memory device after a manufacturing process and forgery and the like by rewriting can be prevented, and a semiconductor device including the memory device. Another object of the invention is to provide a highly-reliable, inexpensive, and nonvolatile memory device and a semiconductor device including the memory device. A memory element includes a first conductive layer, a second conductive layer, a first insulating layer with a thickness of 0.1 nm or more and 4 nm or less being in contact with the first conductive layer, and an organic compound layer interposed between the first conductive layer, the first insulating layer, and the second conductive layer. | 09-04-2008 |
20090065769 | Semiconductor device amd method for manufacturing the same - It is an object of the present invention to provide a technique in which a high-performance and high reliable memory device and a semi-conductor device provided with the memory device are manufactured at low cost with high yield. The semiconductor device includes an organic compound layer including an insulator over a first conductive layer and a second conductive layer over the organic compound layer including an insulator. Further, the semiconductor device is manufactured by forming a first conductive layer, discharging a composition of an insulator and an organic compound over the first conductive layer to form an organic compound layer including an insulator, and forming a second conductive layer over the organic compound layer including an insulator. | 03-12-2009 |
20090140231 | Semiconductor device and method of manufacturing the same - It is an object of the present invention to provide a technique in which a high-performance and highly reliable semiconductor device can be manufactured at low cost with high yield. A memory device according to the present invention has a first conductive layer including a plurality of insulators, an organic compound layer over the first conductive layer including the insulators, and a second conductive layer over the organic compound layer. | 06-04-2009 |
Patent application number | Description | Published |
20110308568 | Photoelectric Conversion Device - A photoelectric conversion device includes a first cell including a photoelectric conversion layer, a second cell over the first cell including a photoelectric conversion layer formed of a material having a wider band gap than that of the first cell, first and second electrodes under a surface of the first cell which is opposite to the second cell, and a third electrode over a surface of the second cell which is opposite to the first cell. The first and second cells each include a p-n or p-i-n junction, the first and second cells are in contact with each other and a p-n junction is formed in a contact portion therebetween, the first cell is electrically connected to the first and second electrodes to form a back contact structure, and the second cell is electrically connected to the third electrode. | 12-22-2011 |
20120118352 | PHOTOELECTRIC CONVERSION MODULE AND PHOTOELECTRIC CONVERSION DEVICE - A reflection member is provided for a space between photoelectric conversion cells or a periphery of the photoelectric conversion cells, which is the place not provided with the photoelectric conversion cell, so that a peak portion of the reflection member is higher than a surface of the photoelectric conversion cells. Accordingly; light having entered the space between the photoelectric conversion cells or the periphery of the photoelectric conversion cells, which does not contribute to power generation under normal circumstances, can be guided to the photoelectric conversion cell through reflection by the reflection member. Note that since the peak portion of the reflection member is higher than the surface of the photoelectric conversion cells, sunlight can be guided to the photoelectric conversion cell through one-time reflection, whereby the object can be achieved. | 05-17-2012 |
20120217566 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD THEREOF - An object is to suppress reading error even in the case where writing and erasing are repeatedly performed. Further, another object is to reduce writing voltage and erasing voltage while increase in the area of a memory transistor is suppressed. A floating gate and a control gate are provided with an insulating film interposed therebetween over a first semiconductor layer for writing operation and erasing operation and a second semiconductor layer for reading operation which are provided over a substrate; injection and release of electrons to and from the floating gate are performed using the first semiconductor layer; and reading is performed using the second semiconductor layer. | 08-30-2012 |
20120234392 | PHOTOELECTRIC CONVERSION DEVICE - A photoelectric conversion device with high open-circuit voltage and high conversion efficiency is provided. A photoelectric conversion device including a p-n junction is formed by stacking a first semiconductor layer having p-type conductivity, a second semiconductor layer having p-type conductivity, and a third semiconductor layer having n-type conductivity between a pair of electrodes. The first semiconductor layer is a compound semiconductor layer, and the second semiconductor layer is formed using an organic compound and an inorganic compound. A material having a high hole-transport property is used as the organic compound, and a transition metal oxide having an electron-accepting property is used as the inorganic compound. | 09-20-2012 |
20130056715 | PHOTOELECTRIC CONVERSION DEVICE - To provide a photoelectric conversion device which has little light loss caused by light absorption in a window layer, the photoelectric conversion device includes a first electrode, a first semiconductor layer formed over the first electrode, a second semiconductor layer formed over the first semiconductor layer, a third semiconductor layer formed over the second semiconductor layer, and a second electrode formed over the third semiconductor layer; and the first semiconductor layer is a light-transmitting semiconductor layer containing an organic compound and an inorganic compound, and the second semiconductor layer and the third semiconductor layer are each a semiconductor layer containing an organic compound. | 03-07-2013 |
20130119374 | PHOTOELECTRIC CONVERSION DEVICE - To provide a photoelectric conversion device which has little light loss caused by light absorption in a window layer and has favorable electric characteristics. The photoelectric conversion device includes, between a pair of electrodes, a light-transmitting semiconductor layer which has one conductivity type and serves as a window layer, and a silicon semiconductor substrate having a conductivity type for forming a p-n junction or a silicon semiconductor layer having a conductivity type for forming a p-i-n junction. The light-transmitting semiconductor layer can be formed using an inorganic compound containing, as its main component, an oxide of a metal belonging to any of Groups 4 to 8 of the periodic table. The band gap of the metal oxide is greater than or equal to 2 eV. | 05-16-2013 |
20130180577 | PHOTOELECTRIC CONVERSION DEVICE - To provide a photoelectric conversion device including a passivation film in which an opening for connection to an electrode does not need to be provided. The photoelectric conversion device includes, between a pair of electrodes, a silicon substrate having p-type conductivity; a silicon semiconductor layer having n-type conductivity which is provided over one surface of the silicon substrate and in contact with one of the pair of electrodes; and an oxide semiconductor layer having p-type conductivity which is provided over the other surface of the silicon substrate and in contact with the other of the pair of electrodes. The oxide semiconductor layer is formed using an inorganic compound which contains an oxide of a metal belonging to any of Groups 4 to 8 in the periodic table as its main component and whose band gap is greater than or equal to 2 eV. | 07-18-2013 |
20130214271 | P-Type Semiconductor Material and Semiconductor Device - An oxide semiconductor material having p-type conductivity and a semiconductor device using the oxide semiconductor material are provided. The oxide semiconductor material having p-type conductivity can be provided using a molybdenum oxide material containing molybdenum oxide (MoO | 08-22-2013 |