Patent application number | Description | Published |
20080284722 | ELECTROPHORETIC DISPLAY DEVICE - An electrophoretic display device is constituted by a first substrate and a second substrate which are disposed with a spacing therebetween, a partition wall disposed in the spacing, electrophoretic particles sealed in a closed space defined by the first and second substrates and the partition wall, a first electrode disposed at a side surface of the closed space, and a second electrode disposed at a bottom surface of the closed space. In the electrophoretic display device, a distribution state of the electrophoretic particles is changed to effect display, and the first electrode has an area substantially equal to or larger than an area of the second electrode. | 11-20-2008 |
20080303774 | Display Apparatus - A display apparatus includes a substrate having a metal layer, a plurality of scanning signal lines and a plurality of data signal lines which intersect with each other and are disposed on the substrate, a display device which has a display element located at an intersecting position of the scanning and data signal lines and is driven by a voltage signal supplied to the scanning and data signal lines, a plurality of coils disposed in parallel with each other on the substrate, and a circuit for detecting currents passing through the plurality of coils by the action of electromagnetic induction of an electromagnetic wave locally generated at a surface of the display device to determine a generation position of the electromagnetic wave by a position of the coils through which the currents pass. The metal layer as a substrate material is a thin electroconductive metal plate which is flexible and not readily broken. | 12-11-2008 |
20090091257 | DISPLAY APPARATUS AND METHOD OF PRODUCING THE SAME - A display apparatus includes a display substrate having an element isolation film surrounding peripheral edges of a plurality of first electrodes, and a laminated area composed of a second electrode and auxiliary electrodes and disposed on the element isolation film. Each of the auxiliary electrode is composed of first auxiliary electrodes arranged in a broken line pattern, and second auxiliary electrodes provided on the first auxiliary electrodes so as to cover areas where the first auxiliary electrodes are not provided. A wiring interval between auxiliary electrodes is smaller than a wiring length of an auxiliary electrode, and the film thickness of each of the first auxiliary electrodes is in the range of 5 to 30 nm. | 04-09-2009 |
20090140258 | TRANSISTOR AND DISPLAY AND METHOD OF DRIVING THE SAME - A field-effect transistor including an electrically conductive substrate; a first insulating film coating the electrically conductive substrate; a gate electrode disposed on the electrically conductive substrate with the first insulating film interposed therebetween; a source electrode; a drain electrode opposing the source electrode with the channel therebetween; a second insulating film covering the gate electrode; and a semiconductor layer having a width larger than a width of the gate electrode in the channel width direction and being partly provided on the gate electrode with the second insulating film interposed therebetween so that the gate electrode, the second insulating film, and the semiconductor layer are laminated in the channel. | 06-04-2009 |
20100078627 | ORGANIC LIGHT-EMITTING DEVICE - The organic light-emitting device of the present invention includes: a substrate; a plurality of organic light-emitting elements formed on the substrate; and an element isolation layer formed between the plurality of organic light-emitting elements, each of the elements having: on the substrate in mentioned order, a first electrode patterned for each of the organic light-emitting elements, an organic compound layer patterned for each of the organic light-emitting elements, and a second electrode; the element isolation layer formed across a space between the plurality of first electrodes to cover the ends of the first electrodes, and having an opening at a portion corresponding to the organic light-emitting elements, and at least a portion of the clement isolation layer in contact with the organic compound layer is formed of an inorganic material. | 04-01-2010 |
Patent application number | Description | Published |
20100303115 | METHOD FOR MANUFACTURING SEMICONDUCTOR LASER DIODE - A method for manufacturing an LD is disclosed. The LD has a striped structure including an optical active region. The striped structure is buried with resin, typically benzo-cyclo-butene (BCB). The method to form an opening in the BCB layer has tri-steps etching of the RIE. First step etches the BCB layer partially by a mixed gas of CF | 12-02-2010 |
20120094415 | METHOD FOR PRODUCING SEMICONDUCTOR OPTICAL DEVICE AND SEMICONDUCTOR OPTICAL DEVICE - A method for producing a semiconductor optical device includes the steps of forming a semiconductor region including a ridge structure on a substrate; forming an insulating film on the semiconductor region; forming a non-photosensitive resin region on the insulating film, forming a first mask that defines a scribe area; forming the scribe area by etching using the first mask; after removing the first mask, forming an insulating layer by etching the insulating film, forming an electrode on the ridge structure and the non-photosensitive resin region to produce a substrate product; forming a scribe line on a surface of the semiconductor region in the scribe area of the substrate product; and cutting the product along the scribe line to form a semiconductor laser bar. | 04-19-2012 |
20130012001 | METHOD FOR PRODUCING SEMICONDUCTOR OPTICAL DEVICE - A method for producing a semiconductor optical device includes the steps of growing a semiconductor stacked layer including an etch stop layer and a plurality of semiconductor layers on a major surface of a substrate; forming a mask layer on a top surface of the semiconductor stacked layer so that a tip portion of each of protrusions that protrude from the top surface among protrusions generated in the step of growing the semiconductor stacked layer is exposed; etching the protrusion by wet etching using the mask layer; after etching the protrusion by wet etching, removing the protrusion by dry etching; and removing the mask layer from the top surface, after removing the protrusion by dry etching. | 01-10-2013 |
20140348196 | SEMICONDUCTOR OPTICAL DEVICE ASSEMBLY - A semiconductor optical device assembly includes a quantum cascade laser including first to fifth portions; and a sub-mount having a mount surface including first to third areas, the first area and the third area supporting the first portion and the fifth portion of the quantum cascade laser. The quantum cascade laser includes a substrate having a main surface; a semiconductor mesa disposed on the main surface in the third portion, the semiconductor mesa including a light emitting layer; and an electrode disposed on a surface in the first to fifth portions of quantum cascade laser, the electrode being in contact with an upper surface of the semiconductor mesa. The quantum cascade laser is mounted on the sub-mount with a gap formed between a surface of the electrode of the third portion of the quantum cascade laser and the second area of the sub-mount. | 11-27-2014 |