| Patent application number | Description | Published |
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| 20110240956 | Group III nitride semiconductor light-emitting device - The present invention provides a Group III nitride semiconductor light-emitting device whose main surface is a plane which provides an internal electric field of zero, and which exhibits improved emission performance. The light-emitting device includes a sapphire substrate which has, in a surface thereof, a plurality of dents which are arranged in a stripe pattern as viewed from above; an n-contact layer formed on the dented surface of the sapphire substrate; a light-emitting layer formed on the n-contact layer; an electron blocking layer formed on the light-emitting layer; a p-contact layer formed on the electron blocking layer; a p-electrode; and an n-electrode. The electron blocking layer has a thickness of 2 to 8 nm and is formed of Mg-doped AlGaN having an Al compositional proportion of 20 to 30%. | 10-06-2011 |
| 20110244610 | METHOD FOR PRODUCING GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE - The present invention provides a method for producing a Group III nitride semiconductor light-emitting device whose main surface is a plane that provides an internal electric field of zero, and which exhibits improved light extraction performance. In the production method, one surface of an a-plane sapphire substrate is subjected to dry etching, to thereby form an embossment pattern having a plurality of mesas which are arranged in a honeycomb-dot pattern as viewed from above; and an n-type layer, a light-emitting layer, and a p-type layer, each of which is formed of a Group III nitride semiconductor layer having an m-plane main surface, are sequentially stacked on the surface of the sapphire substrate on which the mesas are formed. Subsequently, a p-electrode is formed on the p-type layer, and the p-electrode is bonded to a support substrate via a metal layer. Next, the sapphire substrate is removed through the laser lift-off process. On the thus-exposed surface of the n-type layer is formed an embossment pattern having dents provided through transfer of the mesas of the embossment pattern of the sapphire substrate. Then, the emboss-patterned surface of the n-type layer is subjected to wet etching, to thereby form numerous etched pits. | 10-06-2011 |
| 20120083063 | Method for producing group III nitride semiconductor light-emitting device - A method for producing a Group III nitride semiconductor light-emitting device includes an n-type layer, a light-emitting layer, and a p-type layer, each of the layers being formed of Group III nitride semiconductor, being sequentially deposited via a buffer layer on a textured sapphire substrate. A buried layer is formed of Group III nitride semiconductor on the buffer layer, at a temperature lower by 20° C. to 80° C. than the temperature of 1000° C. to 1200° C. when the n-type layer is deposited on the buried layer. The texture provided on the sapphire substrate may have a depth of 1 μm to 2 μm and a side surface inclined by 40° to 80°. A preventing layer may be formed of GaN at 600° C. to 1050° C. so as to cover the entire top surface of the buffer layer. | 04-05-2012 |
| 20130020608 | GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE - A Group III nitride semiconductor light-emitting device exhibiting reduced contact resistance between a p contact layer and an ITO electrode. The Group III nitride semiconductor light-emitting device has an AlGaN dot-like structure on the p contact layer, and an ITO electrode on the p contact layer and the dot-like structure. The dot-like structure has a structure in which a plurality of AlGaN dots are discretely distributed on the top surface of the p contact layer. The dot-like structure is bonded to oxygen, and oxygen increases on an interface between the p contact layer and the ITO electrode. | 01-24-2013 |
| 20130256687 | GROUP III NITRIDE COMPOUND SEMICONDUCTOR LIGHT EMITTING ELEMENT AND METHOD FOR PRODUCING THE SAME - A group III nitride compound semiconductor light emitting device that inhibits occurrence of dislocation in a strain relaxation layer in forming a group III nitride compound semiconductor layer on a thin GaN substrate, and a method for producing the same are provided. A light emitting device | 10-03-2013 |
| 20130277681 | LIGHT-EMITTING DEVICE - A light-emitting device includes a case including a first substrate and a sidewall on the first substrate, a light-emitting, element that is mounted on the first substrate in a region surrounded by the sidewall and includes a second substrate and a crystal layer, the light-emitting element being formed rectangular in a plane viewed in a direction perpendicular to the first substrate, and a low-refractive-index layer that is located between the light-emitting element and the sidewall and has a smaller refractive index than the second substrate. A side surface along a longitudinal direction of the second substrate is provided with a tapered portion on a side of the first substrate. | 10-24-2013 |
| 20150030046 | Group III Nitride Semiconductor Light-Emitting Device - The present invention provides a Group III nitride semiconductor light-emitting device exhibiting improved emission output. The light-emitting device comprises an n-type contact layer on which an n-electrode is formed, a light-emitting layer, an n-type cladding layer formed between the light-emitting layer and the n-type contact layer. The n-type cladding layer has a structure of at least two layers including a first n-type cladding layer closer to the light-emitting layer and a second n-type cladding layer farther from the light-emitting layer than the first n-type cladding layer. The first n-type cladding layer has a Si concentration higher than that of the second n-type cladding layer, and the first n-type cladding layer has a thickness smaller than that of the second n-type cladding layer. | 01-29-2015 |
| 20150041758 | Group III Nitride Semiconductor Light-Emitting Device - The present invention provides a Group III nitride semiconductor light-emitting device which prevents an increase in driving voltage, and which has low threading dislocation density as a whole. The light-emitting device includes an embossed substrate. The substrate has, on a main surface thereof, a first region in which protrusions are arranged at a small pitch, and second regions in which protrusions are arranged at a large pitch. The second regions correspond to projection areas of a p-pad electrode and an n-pad electrode as viewed through the main surface of the substrate. The first region corresponds to a projection area, as viewed through the main surface of the substrate, of a region in which neither the p-pad electrode nor the n-pad electrode is formed. | 02-12-2015 |
| 20150069419 | Semiconductor Light Emitting Element - A semiconductor light emitting element include a semiconductor layer in which a first semiconductor layer, a second semiconductor layer, and a light emitting layer that is disposed between the first semiconductor layer and the second semiconductor layer are disposed. The first semiconductor layer has a step portion protruding more outwards than the light emitting layer and the second semiconductor layer. A plurality of first recesses is formed on side surfaces of the semiconductor layer not including the light emitting layer along a deposition direction of the semiconductor layer and along a direction intersecting with the deposition direction of the semiconductor layer and a plurality of second recesses is found on side surfaces of the semiconductor layer including the light emitting layer along the deposition direction of the semiconductor layer and along the direction intersecting with the deposition direction of the semiconductor layer. | 03-12-2015 |
