Patent application number | Description | Published |
20110155433 | WIRING BOARD CAPABLE OF CONTAINING FUNCTIONAL ELEMENT AND METHOD FOR MANUFACTURING SAME - A wiring board is configured by stacking one or more conductor wiring layers and one or more insulating resin layers and comprising one or more metal vias configured to penetrate the insulating resin layer, wherein the boundary surface between the metal via and the insulating resin layer has a concavo-convex boundary cross-section structure in which the metal via and the insulating resin layer are engaged with each other. | 06-30-2011 |
20110175213 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor device includes: at least one semiconductor element having electrode terminals; a metal plate supporting the semiconductor element; and a wiring board covering the semiconductor element and including a plurality of insulating layers and wiring layers alternately stacked and external connection terminals on a surface, the wiring layers being electrically connected to each other by vias. The electrode terminals and the external connection terminals are electrically connected via at least one of the wiring layers and the vias. At least one of the electrode terminals, the is wiring layers, and the vias is electrically connected to the metal plate. | 07-21-2011 |
20120068359 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A semiconductor device comprises: a core substrate; at least one insulating layer and at least one wiring layer which are disposed on each of a first surface of the core substrate and a second surface opposite to the first surface; a via(s) which is disposed in each of the insulating layer and the core substrate, and connects the wiring layers to each other; a semiconductor element, mounted on the first surface of the core substrate, with a surface for forming an electrode terminal(s) facing up; and a connecting portion(s) which penetrates the insulating layer disposed on the first surface and directly connects the electrode terminal of the semiconductor element and the wiring layer disposed on the first surface. A minimum wiring pitch of the wiring layer directly connected to the connecting portion is smaller than that of any of the wiring layer(s) disposed on the second surface. | 03-22-2012 |
20120133052 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor device includes an embedding layer in which one or more semiconductor element(s) is embedded and one or more interconnect layers as well as one or more insulation layers on one or both sides of the embedding layer. The embedding layer includes a woven cloth formed by reinforcement fibers. The woven cloth has an opening on its site embedding the semiconductor element. The opening is arranged so that direction of the reinforcement fibers will have a preset angle with respect to a direction of a side of or a tangent to at least a portion of the opening, the preset angle being other than a square angle or a zero angle (parallelism). | 05-31-2012 |
20120319254 | WIRING BOARD WITH BUILT-IN SEMICONDUCTOR ELEMENT - A wiring board including a built-in semiconductor element includes the semiconductor element, a peripheral insulating layer covering an outer peripheral side surface of the semiconductor element, an upper surface-side wiring provided on an upper surface side of the wiring board, and a lower surface-side wiring provided on a lower surface side of the wiring board. The semiconductor element includes a first wiring structure layer including a first wiring and a first insulating layer alternately provided on a semiconductor substrate, and a second wiring structure layer including a second wiring and a second insulating layer alternately provided on the first wiring structure layer. The upper surface-side wiring includes a wiring electrically connected to the first wiring via the second wiring. The second wiring is thicker than the first wiring and thinner than the upper surface-side wiring. The second insulating layer is formed of a resin material and is thicker than the first insulating layer. | 12-20-2012 |
20130026653 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - In a manufacturing method of a semiconductor device incorporating a semiconductor element in a multilayered wiring structure including a plurality of wiring layers and insulating layers, a semiconductor element is mounted on a silicon support body whose thickness is reduced to a desired thickness and which are equipped with a plurality of through-vias running through in the thickness direction; an insulating layer is formed to embed the semiconductor element; then, a plurality of wiring layers is formed on the opposite surfaces of the silicon support body in connection with the semiconductor element. Thus, it is possible to reduce warping which occurs in proximity to the semiconductor element in manufacturing, thus improving a warping profile in the entirety of a semiconductor device. Additionally, it is possible to prevent semiconductor elements from becoming useless, improve a yield rate, and produce a thin-type semiconductor device with high-density packaging property. | 01-31-2013 |
20130050967 | FUNCTIONAL DEVICE-EMBEDDED SUBSTRATE - An object of the present invention is to provide a functional device-embedded substrate that can be thinned and suppress occurrence of warpage. The present invention provides a functional device-embedded substrate including at least a functional device including an electrode terminal, and a covering insulating layer covering at least an electrode terminal surface and a side surface of the functional device, the functional device-embedded substrate including a first pillar structure around the functional device inside the covering insulating layer, the first pillar structure including a material having a thermal expansion coefficient between thermal expansion coefficients of the functional device and the covering insulating layer, wherein the first pillar structure is arranged at a position where a shortest distance from a side surface of the functional device to a side surface of the first pillar structure is smaller than a thickness of the functional device. | 02-28-2013 |
20130088841 | SUBSTRATE WITH BUILT-IN FUNCTIONAL ELEMENT - The present invention has an object to provide a substrate with a built-in functional element, including the functional element above a metal plate, in which crosstalk noise between signal wirings can be reduced and higher characteristic impedance matching can be achieved. An aspect of the present invention provides a substrate with a built-in functional element, including: a metal plate that includes a concave portion and serves as a ground; the functional element that is placed in the concave portion and includes an electrode terminal; a first insulating layer that covers the functional element and is placed in contact with the metal plate; a first wiring layer including first signal wiring that is opposite the metal plate with the first insulating layer being interposed therebetween; a second insulating layer that covers the first wiring layer; and a ground layer formed of a ground plane that is opposite the first wiring layer with the second insulating layer being interposed therebetween. | 04-11-2013 |
20130127037 | SEMICONDUCTOR DEVICE BUILT-IN SUBSTRATE - An object of the present invention is to provide a semiconductor device built-in substrate, which can be made thin and can suppress occurrence of warpage. The present invention provides a semiconductor substrate which is featured by including a first semiconductor device serving as a substrate, a second semiconductor device placed on the circuit surface side of the first semiconductor device in the state where the circuit surfaces of the first and second semiconductor devices are placed to face in the same direction, and an insulating layer incorporating therein the second semiconductor device, and which is featured in that a heat dissipation layer is formed at least between the first semiconductor device and the second semiconductor device, and in that the heat dissipation layer is formed on the first semiconductor device so as to extend up to the outside of the second semiconductor device. | 05-23-2013 |
20140024177 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor device includes: at least one semiconductor element having electrode terminals; a metal plate supporting the semiconductor element; and a wiring board covering the semiconductor element and including a plurality of insulating layers and wiring layers alternately stacked and external connection terminals on a surface, the wiring layers being electrically connected to each other by vias. The electrode terminals and the external connection terminals are electrically connected via at least one of the wiring layers and the vias. At least one of the electrode terminals, the wiring layers, and the vias is electrically connected to the metal plate. | 01-23-2014 |
20150034373 | WIRING STRUCTURE AND MANUFACTURING METHOD THEREOF - A wiring structure includes a substrate, a convexoconcave absorption layer including a convexoconcave portion on the substrate, a conductive layer pattern on at least a concave portion of the convexoconcave absorption layer, and an insulating layer pattern over the conductive layer pattern and the convexoconcave absorption layer, on at least the concave portion. This configuration provides a wiring structure and a manufacturing method thereof which enable to form fine multilayer wiring using microcontact printing or the like. | 02-05-2015 |