Patent application number | Description | Published |
20100234205 | TiO2-containing quartz glass substrate - An object of the present invention is to provide a TiO | 09-16-2010 |
20110089612 | TIO2-CONTAINING QUARTZ GLASS SUBSTRATE - An object of the present invention is to provide a TiO | 04-21-2011 |
20110165504 | REFLECTIVE MASK BLANK FOR EUV LITHOGRAPHY, PROCESS FOR PRODUCING THE SAME AND MASK FOR EUV LITHOGRAPHY - Provision of an EUV mask whereby influence of EUV reflected light from an absorber film surface in the peripheral portion of a mask pattern region is suppressed at a time of carrying out EUV lithography; an EUV mask blank to be employed for producing the above EUV mask; and a process for producing the EUV mask blank. | 07-07-2011 |
20120196208 | MULTILAYER MIRROR FOR EUV LITHOGRAPHY AND PROCESS FOR ITS PRODUCTION - Provided are a multilayer mirror for EUVL in which deterioration in reflectivity due to oxidation of a Ru protective layer is prevented, and a process for its production. A multilayer mirror for EUV lithography comprising a substrate, and a reflective layer for reflecting EUV light and a protective layer for protecting the reflective layer, formed in this order on the substrate, wherein the reflective layer is a Mo/Si multilayer reflective film, the protective layer is a Ru layer or a Ru compound layer, and an intermediate layer containing from 0.5 to 25 at % of nitrogen and from 75 to 99.5 at % of Si is formed between the reflective layer and the protective layer. | 08-02-2012 |
20120231378 | REFLECTIVE LAYER-EQUIPPED SUBSTRATE FOR EUV LITHOGRAPHY, REFLECTIVE MASK BLANK FOR EUV LITHOGRAPHY, REFLECTIVE MASK FOR EUV LITHOGRAPHY, AND PROCESS FOR PRODUCTION OF THE REFLECTIVE LAYER-EQUIPPED SUBSTRATE - Provided are an EUV mask blank in which deterioration in reflectivity due to oxidation of a Ru protective layer is prevented, a reflective layer-equipped substrate to be used for producing the EUV mask blank, and a process for producing the reflective layer-equipped substrate. A reflective layer-equipped substrate for EUV lithography comprising a substrate, and a reflective layer for reflecting EUV light and a protective layer for protecting the reflective layer, formed in this order on the substrate, wherein the reflective layer is a Mo/Si multilayer reflective film, the protective layer is a Ru layer or a Ru compound layer, and an intermediate layer containing from 0.5 to 25 at % of nitrogen and from 75 to 99.5 at % of Si is formed between the reflective layer and the protective layer. | 09-13-2012 |
20130011773 | OPTICAL MEMBER BASE MATERIAL FOR EUV LITHOGRAPHY, AND METHOD FOR PRODUCING SAME - The present invention relates to a method for producing an optical member base material for EUVL, comprising performing the following in this order to obtain an optical member base material for EUVL: a preliminary-polishing step of preliminarily polishing a film forming surface and a back surface of the film forming surface of a glass substrate; a measuring step of measuring a total thickness distribution and a flatness of the glass substrate; and a corrective-polishing step of locally polishing only the back surface of the glass substrate depending on the measurement result of the measuring step. | 01-10-2013 |
20140186753 | REFLECTING MASK BLANK, METHOD FOR MANUFACTURING REFLECTIVE MASK BLANK AND METHOD FOR QUALITY CONTROL FOR REFLECTIVE MASK BLANK - The present invention relates to a reflective mask blank containing in this order, a substrate, a multilayer reflective film that reflects exposure light, and an absorber layer that absorbs the exposure light, in which the reflective mask blank further contains a fiducial mark indicating a reference position of the multilayer reflective film, which is formed in a concave shape or in a convex shape on a surface of the multilayer reflective film or on a surface of one layer formed between the multilayer reflective film and the absorber layer, and the fiducial mark is formed so as to have a reflectivity different from an area surrounding the fiducial mark with respect to a light with a prescribed wavelength and is transferred to a layer formed on the fiducial mark. | 07-03-2014 |