Patent application number | Description | Published |
20100188541 | SOLID-STATE IMAGE CAPTURING DEVICE, METHOD OF DRIVING SOLID-STATE IMAGE CAPTURING DEVICE, AND IMAGE CAPTURING APPARATUS - A solid-state image capturing device includes: a pixel array unit including plural pixels each converting light selectively incident through a mechanical shutter into charges to be stored in a storage portion and having an overflow path through which charges exceeding a saturation charge amount are discharged; and a driving unit starting an exposure by simultaneously resetting all pixels of the pixel array unit, maintaining the overflow path in an opened state during the exposure period, and closing the overflow path during a period while signals are read from the pixels after ending the exposure by closing the mechanical shutter. | 07-29-2010 |
20110102620 | SOLID-STATE IMAGING DEVICE, MANUFACTURING METHOD THEREOF, CAMERA, AND ELECTRONIC DEVICE - A solid-state imaging device is provided, which includes a photodiode having a first conductivity type semiconductor area that is dividedly formed for each pixel; a first conductivity type transfer gate electrode formed on the semiconductor substrate via a gate insulating layer in an area neighboring the photodiode, and transmitting signal charges generated and accumulated in the photodiode; a signal reading unit reading a voltage which corresponds to the signal charge or the signal charge; and an inversion layer induction electrode formed on the semiconductor substrate via the gate insulating layer in an area covering a portion or the whole of the photodiode, and composed of a conductor or a semiconductor having a work function. An inversion layer is induced, which is formed by accumulating a second conductivity type carrier on a surface of the inversion layer induction electrode side of the semiconductor area through the inversion layer induction electrode. | 05-05-2011 |
20110121371 | SOLID-STATE IMAGING DEVICE, METHOD OF MANUFACTURING SAME, AND ELECTRONIC APPARATUS - A solid-state imaging device includes a plurality of photoelectric conversion units configured to receive light and generate signal charge, the plurality of photoelectric conversion units being provided in such a manner as to correspond to a plurality of pixels in a pixel area of a semiconductor substrate; and pixel transistors configured to output the signal charge generated by the photoelectric conversion units as electrical signals. Each of the pixel transistors includes at least a transfer transistor that transfers the signal charge generated in the photoelectric conversion unit to a floating diffusion corresponding to a drain. A gate electrode of the transfer transistor is formed in such a manner as to extend with a gate insulating film in between from a channel formed area to a portion where the photoelectric conversion unit has been formed on the surface of the semiconductor substrate. | 05-26-2011 |
20110211103 | SOLID-STATE IMAGE PICKUP APPARATUS, DRIVING METHOD FOR SOLID-STATE IMAGE PICKUP APPARATUS AND ELECTRONIC DEVICE - A solid-state imaging device with a photodiode, a first charge accumulation region electronically connected to the photodiode, a second charge accumulation region electronically connected to the photodiode, where a charge generated in the photodiode is distributed into the first charge accumulation region and the second charge accumulation region based on an amount of charge. | 09-01-2011 |
20120080726 | SOLID-STATE IMAGING DEVICE, METHOD OF MANUFACTURING THE SAME, AND ELECTRONIC DEVICE - Disclosed herein is a solid-state imaging device including: a semiconductor layer including a photoelectric conversion section receiving incident light and generating a signal charge; and a light absorbing section for absorbing transmitted light transmitted by the photoelectric conversion section and having a longer wavelength than light absorbed by the photoelectric conversion section, the transmitted light being included in the incident light, the light absorbing section being disposed on a side of another surface of the semiconductor layer on an opposite side from one surface of the semiconductor layer, the incident light being made incident on the one surface of the semiconductor layer. | 04-05-2012 |
20120153125 | SOLID-STATE IMAGE PICKUP DEVICE, METHOD OF DRIVING SOLID-STATE IMAGE PICKUP DEVICE, AND ELECTRONIC INSTRUMENT - A CMOS image sensor has an image array as a matrix of unit pixels each including at least a photodiode, a memory for holding a charge stored in the photodiode, a floating diffusion region for converting the charge in the memory into a voltage, a first transfer gate for transferring the charge from the photodiode to the memory, a second transfer gate for transferring the charge from the memory to the floating diffusion region, and a resetting transistor for resetting the charge in the floating diffusion region. The unit pixels are driven to set the potential of a potential barrier at a boundary between the memory and the floating diffusion region to a potential such that a charge overflowing the memory is transferred to the floating diffusion region, when the first transfer gate is turned on. The CMOS image sensor operates in a global shutter mode for capturing moving images. | 06-21-2012 |
20130188079 | SOLID-STATE IMAGE SENSOR, SIGNAL PROCESSING METHOD AND ELECTRONIC APPARATUS - There is provided a solid-state image sensor including pixels each at least including light receiving parts receiving light to generate charge, a transfer part transferring the charge accumulated in the light receiving parts, and memory parts holding the charge transferred via the transfer part, and a predetermined number of elements shared by the plurality of pixels, the predetermined number of elements being for outputting a pixel signal at a level corresponding to the charge, wherein one or some of the plurality of pixels is/are a correction pixel(s) outputting a correction pixel signal used for correcting a pixel signal outputted from pixels other than the one or some of the plurality of pixels, and one or some of the predetermined number of elements is/are formed on a wiring layer side of the light receiving parts included in the correction pixel(s). | 07-25-2013 |
20130200479 | SOLID-STATE IMAGING DEVICE, METHOD OF PRODUCING SOLID-STATE IMAGING DEVICE AND ELECTRONIC APPARATUS - There is provided a solid-state imaging device including a pixel array portion in which multiple unit pixels are arranged on a semiconductor substrate, the multiple unit pixels each including a photoelectric conversion portion generating and accumulating a light charge based on a quantity of received light and a charge accumulation portion accumulating the light charge, wherein at least part of an electrode closer to an incidence side on which light enters the unit pixel of the charge accumulation portion, is formed with a metal film functioning as a light blocking film. | 08-08-2013 |
20140077058 | SOLID-STATE IMAGE SENSOR, CONTROL METHOD FOR THE SAME, AND ELECTRONIC DEVICE - There is provided a solid-state image sensor including a plurality of unit pixels each including a photoelectric transducer generating a charge corresponding to an amount of incident light and accumulating the charge therein, a first transfer gate transferring the charge accumulated in the photoelectric transducer, a charge holding region where the charge is held, a second transfer gate transferring the charge, a floating diffusion region where the charge is held to be read out as a signal, a charge discharging gate transferring the charge to a charge discharging part, and a structure including an overflow path formed in a boundary portion between the photoelectric transducer and the charge holding region. | 03-20-2014 |
20140077059 | SOLID STATE IMAGING DEVICE, DRIVING METHOD OF SOLID STATE IMAGING DEVICE, AND ELECTRONIC DEVICE - There is provided a solid state imaging device including a photoelectric conversion unit that performs photoelectric conversion of converting incident light into charges and accumulates the charges, a charge-voltage conversion unit that converts the charges which have been subjected to the photoelectric conversion by the photoelectric conversion unit into a voltage, a charge transfer unit that transfers charges to the charge-voltage conversion unit, a charge reset unit that resets charges of the charge-voltage conversion unit, and a driving unit that performs driving such that a potential of a drain of the charge reset unit is controlled so that the charges are accumulated in the photoelectric conversion unit and the charge-voltage conversion unit up to a saturation level, and then the photoelectric conversion unit is subject to light exposure. | 03-20-2014 |
20140084143 | SOLID-STATE IMAGING DEVICE, METHOD FOR DRIVING THE SAME, METHOD FOR MANUFACTURING THE SAME, AND ELECTRONIC DEVICE - A solid-state imaging device includes a photoelectric conversion section configured to generate photocharges and a transfer gate that transfers the photocharges to a semiconductor region. A method for driving a unit pixel includes a step of accumulating photocharges in a photoelectric conversion section and a step of accumulating the photocharges in a semiconductor region. A method of forming a solid-state imaging device includes implanting ions into a well layer through an opening in a mask, implanting additional ions into the well layer through an opening in another mask, and implanting other ions into the well layer through an opening in yet another mask. An electronic device includes the solid-state imaging device. | 03-27-2014 |
20140242745 | SOLID-STATE IMAGING DEVICE, METHOD OF MANUFACTURING SAME, AND ELECTRONIC APPARATUS - A solid-state imaging device includes a plurality of photoelectric conversion units configured to receive light and generate signal charge, the plurality of photoelectric conversion units being provided in such a manner as to correspond to a plurality of pixels in a pixel area of a semiconductor substrate; and pixel transistors configured to output the signal charge generated by the photoelectric conversion units as electrical signals. Each of the pixel transistors includes at least a transfer transistor that transfers the signal charge generated in the photoelectric conversion unit to a floating diffusion corresponding to a drain. A gate electrode of the transfer transistor is formed in such a manner as to extend with a gate insulating film in between from a channel formed area to a portion where the photoelectric conversion unit has been formed on the surface of the semiconductor substrate. | 08-28-2014 |
20150041871 | SOLID-STATE IMAGING DEVICE, MANUFACTURING METHOD THEREOF, CAMERA, AND ELECTRONIC DEVICE - A solid-state imaging device is provided, which includes a photodiode having a first conductivity type semiconductor area that is dividedly formed for each pixel; a first conductivity type transfer gate electrode formed on the semiconductor substrate via a gate insulating layer in an area neighboring the photodiode, and transmitting signal charges generated and accumulated in the photodiode; a signal reading unit reading a voltage which corresponds to the signal charge or the signal charge; and an inversion layer induction electrode formed on the semiconductor substrate via the gate insulating layer in an area covering a portion or the whole of the photodiode, and composed of a conductor or a semiconductor having a work function. An inversion layer is induced, which is formed by accumulating a second conductivity type carrier on a surface of the inversion layer induction electrode side of the semiconductor area through the inversion layer induction electrode. | 02-12-2015 |