Yoondong
Yoondong Cho, Gwangmyeong-Si KR
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20140217373 | FLEXIBLE DISPLAY SUBSTRATE, FLEXIBLE ORGANIC LIGHT EMITTING DISPLAY DEVICE AND METHOD FOR MANUFACTURING THE SAME - A flexible display substrate, a flexible organic light emitting display device, and a method of manufacturing the same are provided. The flexible display substrate comprises a flexible substrate including a display area and a non-display area extending from the display area, a first wire formed on the display area of the flexible substrate, and a second wire formed on the non-display area of the flexible substrate, wherein at least a part of the non-display area of the flexible substrate is curved in a bending direction, and the second wire formed on at least a part of the non-display area of the flexible substrate includes a first portion formed to extend in a first direction and a second portion formed to extend in a second direction. | 08-07-2014 |
Yoondong Kim, Yongin-Si KR
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20110156843 | PRINTED CIRCUIT BOARD AND TRANSMITTING/RECEIVING MODULE INCLUDING THE SAME - A printed circuit board and a transmitting/receiving module including the same are disclosed. The printed circuit board in accordance with an embodiment of the present invention can include a substrate, a first transmission line, which is formed on one surface of the substrate and transmits an inputted data signal, and a second transmission line, which is capacitively connected to the first transmission line. Here, the first transmission line and the second transmission line transmit an ascending edge and a descending edge of the inputted data signal. | 06-30-2011 |
20120161896 | FREQUENCY TUNABLE BALUN CIRCUIT - Disclosed herein is a frequency tunable balun circuit including: first and second balanced terminals having balanced signals outputted therefrom or inputted thereto, the balanced signals having the same magnitude and a predetermined phase difference; a first transmission line maintaining a predetermined phase difference between the first and second balanced terminals; a first inductor connected in series between the first transmission line and an unbalanced terminal having an unbalanced signal inputted thereto or outputted therefrom; a first tunable capacitive device connected in series between the unbalanced terminal and the second balanced terminal; a second transmission line connected between the first inductor and the first varacter diode; and a second tunable capacitive device connected in parallel with the second transmission line. The frequency tunable balun circuit may easily tune an operating frequency, while improving impedance matching characteristics, signal transmission loss characteristics, and signal isolation characteristics. | 06-28-2012 |
Yoondong Park, Yongin-Si KR
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20100128509 | Three-Dimensional Semiconductor Devices and Methods of Operating the Same - Provided are a three-dimensional semiconductor device and a method of operating the same. The three-dimensional semiconductor device includes: a plurality of word line structures on a substrate; active semiconductor patterns between the plurality of word line structures; and information storage elements between the plurality of word line structures and the active semiconductor patterns. Each of the plurality of word line structures includes a plurality of word lines spaced apart from each other and stacked, and the active semiconductor patterns include electrode regions and channel regions, the electrode regions and the channel regions having different conductive types and being alternately arranged. | 05-27-2010 |
20100172182 | Nonvolatile memory device and method for operating the same - Disclosed is a nonvolatile memory device which includes a plurality of cell array layers stacked on a semiconductor substrate. Each of the plurality of cell array layers includes a plurality of strings. Each of the plurality of strings has string and ground select transistors and a plurality of memory cells connected in series between the string and ground select transistors. A common source line is on each of the plurality of cell array layers. Each common source line is connected with first sides of the plurality of strings on a corresponding cell array layer. A plurality of bit lines is connected with second sides of the plurality of strings disposed on the cell array layers and arranged in the vertical direction to the semiconductor substrate. A plurality of word lines is connected with the plurality of memory cells. | 07-08-2010 |
20110038197 | VARIABLE RESISTANCE MEMORY AND MEMORY SYSTEM INCLUDING THE SAME - A variable resistance memory array includes at least one variable resistance memory cell, wherein each variable resistance memory cell includes a well having a first type; and a cell structure on the well, the cell structure including a structure having a second type different from the first type and a variable resistance layer on the structure. | 02-17-2011 |
20110108897 | IMAGE SENSOR - An image sensor includes an active region including a photoelectric conversion region and a floating diffusion region, which are separated from each other, defined by a device isolation region on a semiconductor substrate, and a transfer transistor including a first sub-gate provided on an upper surface of the semiconductor substrate and a second sub-gate extending within a recessed portion of the semiconductor substrate on the active region between the photoelectric conversion region and the floating diffusion region, wherein the photoelectric conversion region includes a plurality of photoelectric conversion elements, which vertically overlap each other within the semiconductor substrate and are spaced apart from the recessed portion. | 05-12-2011 |
Yoondong Park, Seoul KR
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20100202206 | NON-VOLATILE MEMORY DEVICES INCLUDING VERTICAL NAND CHANNELS AND METHODS OF FORMING THE SAME - A non-volatile memory device can include a plurality of immediately adjacent offset vertical NAND channels that are electrically coupled to a single upper select gate line or to a single lower select gate line of the non-volatile memory device. | 08-12-2010 |