Patent application number | Description | Published |
20090072349 | Semiconductor device and method of manufacturing the same - Example embodiments provide a semiconductor device and a method of manufacturing the same. A semiconductor device according to example embodiments may include a lower electrode including a first lower electrode and a second lower electrode, and the second lower electrode may be formed on at least a part of the first lower electrode using a material different from the first lower electrode. A dielectric film may be formed on at least a part of the second lower electrode and a first upper electrode may be formed on the dielectric film. | 03-19-2009 |
20090072350 | SEMICONDUCTOR DEVICES HAVING A CONTACT PLUG AND FABRICATION METHODS THEREOF - Provided are a semiconductor device and a method of fabricating the same. The semiconductor device includes an insulating layer that is formed on a supporting layer and has a contact hole. A first contact plug is formed on an inner wall and bottom of the contact hole. A second contact plug buries the contact hole and is formed on the first contact plug. A conductive layer is connected to the first contact plug and the second contact plug. The bottom thickness of the first contact plug formed on the bottom of the contact hole is thicker than the inner wall thickness of the first contact plug formed on the inner wall of the contact hole. | 03-19-2009 |
20090130457 | DIELECTRIC STRUCTURE - A dielectric structure includes a first dielectric layer, a buffer oxide layer and a second dielectric layer. The lower dielectric layer has a material having a perovskite structure including titanium and is formed on a substrate. The buffer oxide layer is formed on the first dielectric layer. The second dielectric layer has a perovskite structure including titanium and is formed on the buffer oxide layer. | 05-21-2009 |
20090258470 | Method of Manufacturing a Semiconductor Device Using an Atomic Layer Deposition Process - Methods of manufacturing a semiconductor device include forming an absorption layer on a surface of a substrate by exposing the surface of the substrate to a first reaction gas at a first temperature. A metal oxide layer is then formed on the surface of the substrate by exposing the absorption layer to a second reaction gas at a second temperature. The first reaction gas may include a precursor containing zirconium (e.g., tetrakis(ethylmethylamino)zirconium) and the second reaction gas may include an oxidizing agent. | 10-15-2009 |
20100196592 | METHODS OF FABRICATING CAPACITORS INCLUDING LOW-TEMPERATURE CAPPING LAYERS - In a method of fabricating a capacitor, a lower electrode is formed, and a dielectric layer is formed on the lower electrode. An upper electrode is foamed on the dielectric layer opposite the lower electrode. A low-temperature capping layer is formed on the upper electrode at a temperature of less than about 300° C. Related devices and fabrication methods are also discussed. | 08-05-2010 |
20100203725 | Methods of fabricating semiconductor devices and semiconductor devices including a contact plug processed by rapid thermal annealing - A method of fabricating a semiconductor device includes depositing tungsten on an insulating layer in which a contact hole is formed by chemical vapor deposition (CVD), performing chemical mechanical planarization (CMP) on the tungsten to expose the insulating layer and form a tungsten contact plug, and performing rapid thermal oxidation (RTO) on the tungsten contact plug in an oxygen atmosphere such that the tungsten expands volumetrically into tungsten oxide (W | 08-12-2010 |
20100209595 | Methods of Forming Strontium Ruthenate Thin Films and Methods of Manufacturing Capacitors Including the Same - In a method of forming a strontium ruthenate thin film using water vapor as an oxidizing agent, a strontium source and a ruthenium source are used. The strontium source includes a cyclopentadienyl (Cp) ligand, an alkoxide ligand, an alkyl ligand, an amide ligand or a halide ligand, and the ruthenium source includes a beta diketonate ligand. | 08-19-2010 |
20110237043 | METHOD FOR MANUFACTURING CAPACITOR OF SEMICONDUCTOR DEVICE AND CAPACITOR OF SEMICONDUCTOR DEVICE MANUFACTURED THEREBY - A method of manufacturing a capacitor of a semiconductor device includes forming a high-k dielectric pattern on a semiconductor substrate, the high-k dielectric pattern having a pillar shape including a hole therein, forming a lower electrode in the hole of the high-k dielectric pattern, locally forming a blocking insulating pattern on an upper surface of the lower electrode, and forming an upper electrode covering the high-k dielectric pattern and the blocking insulating pattern. | 09-29-2011 |
20110242727 | CAPACITOR - A capacitor may include a lower electrode structure, a dielectric layer and an upper electrode structure. The lower electrode structure may include a first lower pattern, a first deformation-preventing layer pattern and a second lower pattern. The first lower pattern may have a cylindrical shape. The first deformation-preventing layer pattern may be formed on an inner surface of the first lower pattern. The second lower pattern may be formed on the first deformation-preventing layer pattern. The dielectric layer may be formed on the lower electrode structure. The upper electrode structure may be formed on the dielectric layer. Thus, the capacitor may have a high capacitance and improved electrical characteristics. | 10-06-2011 |
20120086014 | Semiconductor Device Having Glue Layer And Supporter - A plurality of metal patterns are disposed on a substrate. A support structure is provided between the plurality of metal patterns. The support structure has a supporter and a glue layer. Each of the plurality of metal patterns has a greater vertical length than a horizontal length on the substrate when viewed from a cross-sectional view. The supporter has a band gap energy of at least 4.5eV. The glue layer is in contact with the plurality of metal patterns. The supporter and the glue layer are formed of different materials. | 04-12-2012 |
20120119327 | CAPACITOR AND SEMICONDUCTOR DEVICE INCLUDING A CAPACITOR - A capacitor in a semiconductor memory device comprises a lower electrode on a substrate that is formed of a conductive metal oxide having a rutile crystalline structure, a titanium oxide dielectric layer on the lower electrode that has a rutile crystalline structure and includes impurities for reducing a leakage current, and an upper electrode on the titanium oxide dielectric layer. A method of forming a capacitor in a semiconductor device comprise steps of forming a lower electrode on a substrate that includes a conductive metal oxide having a rutile crystalline structure, forming a titanium oxide dielectric layer on the lower electrode that has a rutile crystalline structure and impurities for reducing a leakage current, and forming an upper electrode on the titanium oxide dielectric layer. | 05-17-2012 |
20120264271 | METHOD OF FORMING A CAPACITOR AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE USING THE SAME - A capacitor is fabricated by forming a mold layer of a silicon based material that is not an oxide of silicon, e.g., polysilicon or doped polysilicon, on a substrate, forming an opening through the mold layer, forming a barrier layer pattern along the sides of the opening, subsequently forming a lower electrode in the opening, then removing the mold layer and the barrier layer pattern, and finally sequentially forming dielectric layer and an upper electrode on the lower electrode. | 10-18-2012 |
20130217203 | CAPACITOR, METHOD OF FORMING A CAPACITOR, SEMICONDUCTOR DEVICE INCLUDING A CAPACITOR AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE - A capacitor in a semiconductor memory device comprises a lower electrode on a substrate that is formed of a conductive metal oxide having a rutile crystalline structure, a titanium oxide dielectric layer on the lower electrode that has a rutile crystalline structure and includes impurities for reducing a leakage current, and an upper electrode on the titanium oxide dielectric layer. A method of forming a capacitor in a semiconductor device comprise steps of forming a lower electrode on a substrate that includes a conductive metal oxide having a rutile crystalline structure, forming a titanium oxide dielectric layer on the lower electrode that has a rutile crystalline structure and impurities for reducing a leakage current, and forming an upper electrode on the titanium oxide dielectric layer. | 08-22-2013 |
20140145306 | SEMICONDUCTOR DEVICE HAVING GLUE LAYER AND SUPPORTER - A plurality of metal patterns are disposed on a substrate. A support structure is provided between the plurality of metal patterns. The support structure has a supporter and a glue layer. Each of the plurality of metal patterns has a greater vertical length than a horizontal length on the substrate when viewed from a cross-sectional view. The supporter has a band gap energy of at least 4.5 eV. The glue layer is in contact with the plurality of metal patterns. The supporter and the glue layer are formed of different materials. | 05-29-2014 |
20150076658 | Semiconductor Device Including Capacitor and Method of Manufacturing the Same - A semiconductor device includes a lower electrode including at least one of a noble metal and a conductive noble metal oxide, a dielectric layer disposed on the lower electrode and including titanium oxide, a protection insulating layer disposed on the dielectric layer and including tantalum oxide and a barrier oxide, and an upper electrode disposed on the protection insulating layer. | 03-19-2015 |