Yong-Soo Kim
Yong-Soo Kim, Gyengnam KR
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20100331381 | Substituted Phenylureas and Phenylamides as Vanilloid Receptor Ligands - The invention relates to substituted phenylureas and phenylamides, to processes for the preparation thereof, to pharmaceutical compositions containing these compounds and also to the use of these compounds for preparing pharmaceutical compositions. | 12-30-2010 |
20110003795 | Substituted Aromatic Carboxamide and Urea Derivatives as Vanilloid Receptor Ligands - The invention relates to substituted aromatic carboxamide and urea derivatives, to processes for the preparation thereof, to pharmaceutical compositions containing these compounds and also to the use of these compounds for preparing pharmaceutical compositions. | 01-06-2011 |
20120258946 | Substituted Phenylureas and Phenylamides as Vanilloid Receptor Ligands - Substituted phenylureas and phenylamides, processes for their preparation, pharmaceutical compositions containing these compounds, and the use of these compounds for preparing pharmaceutical compositions. | 10-11-2012 |
20140142143 | Substituted Phenylureas and Phenylamides as Vanilloid Receptor Ligands - The invention relates to substituted phenylureas and phenylamides, to processes for the preparation thereof, to pharmaceutical compositions containing these compounds and also to the use of these compounds for preparing pharmaceutical compositions. | 05-22-2014 |
20150099728 | Substituted Phenylureas and Phenylamides as Vanilloid Receptor Ligands - Substituted phenylureas and phenylamides, processes for their preparation, pharmaceutical compositions containing these compounds, and the use of these compounds for preparing pharmaceutical compositions. | 04-09-2015 |
Yong-Soo Kim, Gyeonggi-Do KR
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20100155818 | VERTICAL CHANNEL TYPE NONVOLATILE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME - A method for fabricating, a vertical channel type nonvolatile memory device includes: alternately forming a plurality of sacrificial layers and a plurality of interlayer dielectric layers over a semiconductor substrate; etching the sacrificial layers and the interlayer dielectric layers to form a plurality of first openings for channel each of which exposes the substrate; filling the first openings to form a plurality of channels protruding from the semiconductor substrate; etching the sacrificial layers and the interlayer dielectric layers to form second openings for removal of the sacrificial layers between the channels; exposing sidewalls of the channels by removing the sacrificial layers exposed by the second openings; and forming a tunnel insulation layer, a charge trap layer, a charge blocking layer, and a conductive layer for gate electrode on the exposed sidewalls of the channels. | 06-24-2010 |
20100309256 | PRINTER INK CARTRIDGE TYPE CONNECTOR - Provided is an electrical connector for a print ink cartridge. The electrical connector includes a housing including a thin protrusion having a rectangle shape on one side portion thereof, a plurality of pin grooves spaced apart predetermined intervals from each in one side lower portion of the protrusion, a plurality of format ribs spaced apart predetermined intervals from each other in the other side of the protrusion, and coupling bosses having a wedge shape separately protruding on both sides of each of the ribs, a connection terminal serving as a torsion spring, the connecting terminal including a pin connector inserted into each of the pin grooves of the housing and fixed in a straight line orientation, a wound coupling insert fitted onto each of the coupling bosses to give elasticity thereto, a parallel extending from the coupling insert and along each of the ribs, a bend bent at a front end of the parallel, and a socket connector bent in a state where the socket connector is connected to the bend, the socket connector being connected to an external socket, and a cover integrally fixed to the housing by a plurality of coupling hooks disposed on the housing, the cover including pine connector grooves pressing the pin connector of the coupling terminal in a downward direction in a side surface of the cover. | 12-09-2010 |
20130175603 | VERTICAL CHANNEL TYPE NONVOLATILE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME - A method for fabricating a vertical channel type nonvolatile memory device includes: alternately forming a plurality of sacrificial layers and a plurality of interlayer dielectric layers over a semiconductor substrate; etching the sacrificial layers and the interlayer dielectric layers to form a plurality of first openings for channel each of which exposes the substrate; filling the first openings to form a plurality of channels protruding from the semiconductor substrate; etching the sacrificial layers and the interlayer dielectric layers to form second openings for removal of the sacrificial layers between the channels; exposing side walls of the channels by removing the sacrificial layers exposed by the second openings; and forming a tunnel insulation layer, a charge trap layer, a charge blocking layer, and a conductive layer for gate electrode on the exposed sidewalls of the channels. | 07-11-2013 |
20140223080 | NON-VOLATILE MEMORY DEVICE, ELECTRONIC CONTROL SYSTEM, AND METHOD OF OPERATING THE NON-VOLATILE MEMORY DEVICE - Provided are a non-volatile memory device, an electronic control system, and a method of operating the non-volatile memory device. A non-volatile memory device according to an embodiment of the present invention includes a first NAND cell array including a first group of pages, and a second NAND cell array including a second group of pages. A plurality of X-decoders are at least one-to-one connected to the first and second NAND cell arrays. A control logic controls the plurality of X-decoders to simultaneously sense data of a first page corresponding to a start address from among the first group of pages, and data of a second page subsequent to the first page from among the second group of pages. | 08-07-2014 |
Yong-Soo Kim, Pohang KR
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20100310149 | DEVICE AND METHOD FOR DETECTING THE JOINTED PARTS OF STRIP IN AN ENDLESS HOT ROLLING PROCESS - There are provided a device and method for detecting joint parts of a steel strip in an endless hot rolling process. The device for detecting joint parts of a steel strip in an endless hot rolling process includes an image signal collection block receiving image signals, each having information on gray level pixels of a steel strip, from a charge coupled device (CCD) camera; an edge line detection block receiving the image signals from the image signal collection block to detect an edge line of the steel strip; a profile calculation block receiving information on the detection of the edge line from the edge line detection block to calculate the sum of gray levels up to an edge line of the steel strip in a traverse direction of the steel strip when the edge line is detected by the edge line detection block; a joint part judgement block receiving information on the sum of the gray levels, which shows a current profile value, from the profile calculation block to judge the edge line as a joint part when a ratio of a mean value of the current profile and a mean value of the previous profile is less than a predetermined value; and an output block receiving information on the judgement of the edge line as the joint part from the joint part judgement block to output a joint part-detecting signal when the edge line is judged to be a joint part. | 12-09-2010 |
Yong-Soo Kim, Seoul KR
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20100265614 | SERVO PATTERN WRITING METHOD OF HARD DISK DRIVE - A method of writing a servo pattern in a hard disk drive includes manufacturing a master pattern, and writing the reference servo pattern to the disk by using the master pattern and a magnet for magnetizing the disk. The master pattern includes a plurality of ammonite cycles that have substantially the same pattern as the reference servo pattern and are radially formed from the outside toward the inside of the disk. A final servo pattern may be written using the reference servo pattern. | 10-21-2010 |
20110181977 | METHOD OF WRITING SERVO PATTERN TO DISK OF A HARD DISK DRIVE AND HARD DISK DRIVE CONFIGURED TO PERFORM THE METHOD - A method of writing a servo pattern of a hard disk drive includes measuring the speed of a head of the hard disk drive by reading a basic servo pattern written to only select ones of the data tracks of the disk, realizing a feedforward current profile when the difference between the actual speed of the head and a target speed of the head is within a predetermined range, and writing a reference servo pattern using the realized feedforward current profile. A final servo pattern is then written using the reference servo pattern. | 07-28-2011 |
20110181983 | METHOD OF CENTERING A DISK OF HARD DISK DRIVE - A method of centering a disk of a hard disk drive includes arranging a disk on an upper end portion of a hub on which a plurality of disks are rotatably assembled, and assembling the disk on the hub by vibrating the hub. Accordingly, the disks and/or spacers may be easily assembled on the hub, a time of centering may be relatively much reduced, and a superior centering quality may be obtained. | 07-28-2011 |
20150192463 | APPARATUS AND METHOD FOR CALIBRATING EXTREME ULTRAVIOLET SPECTROMETER - Provided are an apparatus and method for calibrating an extreme ultraviolet (EUV) spectrometer in which a wavelength of a spectrum of EUV light used for EUV lithography and mask inspection technology can be measured accurately. | 07-09-2015 |
20150346029 | APPARATUS AND METHOD FOR EXTREME ULTRAVIOLET SPECTROMETER CALIBRATION - Disclosed are herein an apparatus and method for extreme ultraviolet (EUV) spectroscope calibration. The apparatus for EUV spectroscope calibration includes an EUV generating module, an Al filter, a diffraction grating, a CCD camera, a spectrum conversion module, and a control module that compares a wavelength value corresponding to a maximum peak among peaks of the spectrum depending on the order of the EUV light converted from the spectrum conversion module with a predetermined reference wavelength value depending on an order of high-order harmonics to calculate a difference value with the closest reference wavelength value, and controls the spectrum depending on the order of the EUV light converted from the spectrum conversion module to be moved in a direction of wavelength axis by the calculated difference value. Thus, it is possible to accurately measure a wavelength of a spectrum of EUV light used in EUV exposure technology and mask inspection technology. | 12-03-2015 |
Yong-Soo Kim, Icheon-Si KR
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20090236656 | SEMICONDUCTOR DEVICE HAVING VERTICAL CHANNEL TRANSISTOR AND METHOD FOR FABRICATING THE SAME - A semiconductor device having a substrate; a plurality of pillar structures, wherein each pillar structure includes an active pillar disposed over the substrate; a gate electrode surrounding an outer wall of the active pillar; an interlayer dielectric (ILD) layer insulating adjacent pillar structures; a gate contact penetrating the ILD layer and configured to connect to a sidewall of the gate electrode; and a word line connected to the gate contact. | 09-24-2009 |
20090273018 | NONVOLATILE MEMORY DEVICE WITH MULTIPLE BLOCKING LAYERS AND METHOD OF FABRICATING THE SAME - A nonvolatile memory device with a blocking layer controlling the transfer of electric charges in a charge storage layer includes the blocking layer having a first blocking layer in contact with the charge storage layer and a second blocking layer over the first blocking layer, wherein the first blocking layer has a greater energy band gap than the second blocking layer and the second blocking layer has a greater permittivity than the first blocking layer. | 11-05-2009 |
20090325369 | Semiconductor device and method of fabricating the same - A method of fabricating a semiconductor device includes forming a gate dielectric on a substrate, forming a gate structure on the gate dielectric, the gate structure comprising a stacked layer of a silicon layer and a metal layer, selectively etching the gate structure to form a gate pattern, forming a capping layer surrounding the gate pattern, plasma-treating the capping layer, and performing a gate reoxidation process | 12-31-2009 |
20110165769 | NONVOLATILE MEMORY DEVICE WITH MULTIPLE BLOCKING LAYERS AND METHOD OF FABRICATING THE SAME - A nonvolatile memory device with a blocking layer controlling the transfer of electric charges in a charge storage layer includes the blocking layer having a first blocking layer in contact with the charge storage layer and a second blocking layer over the first blocking layer, wherein the first blocking layer has a greater energy band gap than the second blocking layer and the second blocking layer has a greater permittivity than the first blocking layer. | 07-07-2011 |
20110250746 | NONVOLATILE MEMORY DEVICE WITH MULTIPLE BLOCKING LAYERS AND METHOD OF FABRICATING THE SAME - A nonvolatile memory device with a blocking layer controlling the transfer of electric charges in a charge storage layer includes the blocking layer having a first blocking layer in contact with the charge storage layer and a second blocking layer over the first blocking layer, wherein the first blocking layer has a greater energy band gap than the second blocking layer and the second blocking layer has a greater permittivity than the first blocking layer. | 10-13-2011 |
20140252458 | SEMICONDUCTOR DEVICE HAVING VERTICAL CHANNEL TRANSISTOR AND METHOD FOR FABRICATING THE SAME - A semiconductor device having a substrate; a plurality of pillar structures, wherein each pillar structure includes an active pillar disposed over the substrate; a gate electrode surrounding an outer wall of the active pillar; an interlayer dielectric (ILD) layer insulating adjacent pillar structures; a gate contact penetrating the ILD layer and configured to connect to a sidewall of the gate electrode; and a word line connected to the gate contact. | 09-11-2014 |
Yong-Soo Kim, Ichon-Do KR
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20110186920 | SEMICONDUCTOR DEVICE WITH GATE STACK STRUCTURE - A semiconductor device includes a first conductive layer, a first intermediate structure over the first conductive layer, a second intermediate structure over the first intermediate structure, and a second conductive layer over the second intermediate structure. The first intermediate structure includes a metal silicide layer and a nitrogen containing metal layer. The second intermediate structure includes at least a nitrogen containing metal silicide layer. | 08-04-2011 |
Yong-Soo Kim, Pohang-Si KR
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20120267015 | Non-Oriented Electrical Steel Sheet Having Superior Magnetic Properties and a Production Method Therefor - Provided are: a non-oriented electrical steel sheet having outstanding magnetic properties and comprising, as percentages by weight, from 1.0 to 3.0% of Al, from 0.5 to 2.5% of Si, from 0.5 to 2.0% of Mn, from 0.001 to 0.004% of N, from 0.0005 to 0.004% of S and a balance of Fe and other unavoidably incorporated impurities, wherein the Al, Mn, N and S are included so as to satisfy the compositional formulae {[Al]+[Mn]}≦3.5, 0.002≦{[N]+[S]}≦0.006, 300≦{([Al]+[Mn])/([N]+[S])}≦1,400; and a production method therefor. By optimising the Al, Si, Mn, N and S added components in this way, the distribution density of coarse inclusions is increased, thereby making it possible to improve crystal-grain growth properties and domain wall mobility and so produce the highest grade of non-oriented electrical steel sheet having superior magnetic properties, low hardness, and superior customer workability and productivity. | 10-25-2012 |
20130167987 | Low Iron Loss High Strength Non-Oriented Electromagnetic Steel Sheet and Method for Manufacturing Same - Provided is a low iron loss high strength non-oriented electromagnetic steel sheet and a method for manufacturing the same. The method comprises hot-rolling a slab comprising 0.005 weight % or less of C, 4.0 weight % or less of Si, 0.1 weight % or less of P, 0.03 weight % or less of S, 0.1 to 2.0 weight % of Mn, 0.3 to 2.0 weight % of Al, 0.003 weight % or less of N, 0.005 weight % or less of Ti, the remainder being Fe and unavoidable impurities, cold-rolling the slab, and finally annealing the slab such that the fractional area of the non-recrystallization tissue at the cross sectional surface of the steel sheet is 50% or lower (not including 0%). | 07-04-2013 |
Yong-Soo Kim, Gangwon-Do KR
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20140107487 | ULTRASOUND SYSTEM AND METHOD FOR AUTOMATICALLY ACTIVATING ULTRASOUND PROBE BASED ON MOTION OF THE ULTRASOUND PROBE - Provided are an ultrasound system and method for automatically activating an ultrasound probe based on motion of the ultrasound probe. The ultrasound system includes an ultrasound probe for transmitting an ultrasound signal to an object and receiving an ultrasound echo signal reflected from the object; a sensing unit for sensing the ultrasound probe and generating sensing information corresponding to motion of the ultrasound probe; and an automatic activation unit for activating the ultrasound probe based on the sensing information. | 04-17-2014 |
20140164965 | ULTRASOUND APPARATUS AND METHOD OF INPUTTING INFORMATION INTO SAME - In an ultrasound apparatus comprising a user input unit for receiving a touch input, provided are a method and apparatus for receiving an input from a user for setting a gain value, determining a coordinate matching mode between the user input unit and an output unit, and adjusting a gain value of ultrasound data based on the user input and the coordinate matching mode. In addition, provided are a method and apparatus for applying a compensation value for ultrasound data, through a user input. | 06-12-2014 |
Yong-Soo Kim, Paju-Si KR
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20160136937 | Pressure-Sensing Stages For Lamination Systems - A lamination system ( | 05-19-2016 |