Patent application number | Description | Published |
20090310072 | LIQUID CRYSTAL DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME - A liquid crystal display device includes a gate line placed on an array substrate, a pixel electrode in a comb teeth shape, a common electrode in a comb teeth shape that generates an in-plane electric field with the pixel electrode, an alignment layer that has an alignment direction inclined at a predetermined rubbing angle β with respect to a vertical direction perpendicular to the gate line, and two sections (upper pixel and lower pixel) where a direction of response of liquid crystals is different. The comb teeth of the pixel electrode and the common electrode are inclined at a predetermined electrode angle α with respect to the vertical direction in each of the two sections, and the electrode angle α and the rubbing angle β satisfy conditions of |α|>|β| and 90°−|α−β|≧45° in each of the two sections. | 12-17-2009 |
20090322995 | LIQUID CRYSTAL DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME - A liquid crystal display device includes an alignment layer having an alignment direction inclined at an angle α where 0°<α<90° with respect to an extending direction of a gate line, a pixel electrode, and a common electrode placed opposite to the pixel electrode with an insulating layer interposed therebetween. One of the pixel electrode and the common electrode has a slit for generating a fringe electric field to liquid crystals with the other of the pixel electrode and the common electrode. The slit includes a first slit lying in the alignment direction or a direction perpendicular to the alignment direction, and a plurality of second slits and a plurality of third slits respectively inclined at an angle ±θ with respect to the first slit. | 12-31-2009 |
20100296042 | LIQUID CRYSTAL DISPLAY DEVICE - A liquid crystal device according to an embodiment of the present invention includes: a first substrate including a slit electrode that has slit-like apertures to form line-like patterns substantially in a same direction as either source wires or gate wires; a second substrate including a light shielding film that extends in a same direction as the line-like patterns of the slit electrode, and that has an overlap area with either the source wires or the gate wires, and that is arranged that color filter films are partitioned to prevent color mixture when displayed in a single color. A non-opposed area to the light shielding film is formed at an end of the slit electrode in a width direction that a transmittance may not be reduced due to the light shielding film in the areas where the light shielding film and the slit electrode are arranged in an overlapped manner. | 11-25-2010 |
20120133865 | LIQUID CRYSTAL DISPLAY PANEL AND LIQUID CRYSTAL DISPLAY DEVICE - A liquid crystal display panel includes switching elements, transparent pixel electrodes, and a transparent common electrode having a predetermined area overlapped with an upper layer of the transparent pixel electrode through an insulating film and driving liquid crystal with the transparent pixel electrode. In plane view, a shading layer covers at least one part of a conductive pattern where a light leakage occurs in front view by an alignment defect of the liquid crystal near a non-permeable conductive pattern disposed in the display region at the time of black display, and has eaves more protruding than the conductive pattern. The transparent common electrode is provided to overlap with the conductive pattern arranged to overlap with the light-shielding layer having the eaves in a side of the liquid crystal and to protrude compared with the light-shielding layer having the eaves in a planar view. | 05-31-2012 |
20120249913 | LIQUID CRYSTAL DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME - A liquid crystal display device includes an alignment layer having an alignment direction inclined at an angle α where 0°<α<90° with respect to an extending direction of a gate line, a pixel electrode, and a common electrode placed opposite to the pixel electrode with an insulating layer interposed therebetween. One of the pixel electrode and the common electrode has a slit for generating a fringe electric field to liquid crystals with the other of the pixel electrode and the common electrode. The slit includes a first slit lying in the alignment direction or a direction perpendicular to the alignment direction, and a plurality of second slits and a plurality of third slits respectively inclined at an angle ±θ with respect to the first slit. | 10-04-2012 |
20130155347 | LIQUID CRYSTAL DISPLAY DEVICE - A liquid crystal display device includes: a display panel which includes a TFT array substrate and a CF substrate arranged as opposed to each other, and a liquid crystal held therebetween; and a front panel which is adhered to a front surface side of the display panel with a resin layer interposed therebetween. A display region of the display panel is provided with main spacers formed on the CF substrate and making contact with the TFT array substrate, and sub-spacers formed on the CF substrate and not reaching the TFT array substrate. A ratio of a total contact area of the main spacers and the TFT array substrate with respect to an area of the display region of the liquid crystal panel is equal to or smaller than 0.02%. | 06-20-2013 |
20140160401 | LIQUID CRYSTAL DISPLAY PANEL - A liquid crystal display panel includes signal lines, scanning lines, a common line, and a planarizing film covering the lines. Pattern edge portions of a pixel electrode are arranged to be overlaid above edge portions of the signal lines and the scanning lines. Further, slits being openings formed at the pixel electrode are formed line-symmetrically to each other relative to a reference line which is the extending direction of the common line arranged to cross the center portion of a pixel part. | 06-12-2014 |
20150153621 | LIQUID CRYSTAL DISPLAY PANEL AND LIQUID CRYSTAL DISPLAY DEVICE - A liquid crystal display panel includes switching elements, transparent pixel electrodes, and a transparent common electrode having a predetermined area overlapped with an upper layer of the transparent pixel electrode through an insulating film and driving liquid crystal with the transparent pixel electrode. In plane view, a shading layer covers at least one part of a conductive pattern where a light leakage occurs in front view by an alignment defect of the liquid crystal near a non-permeable conductive pattern disposed in the display region at the time of black display, and has eaves more protruding than the conductive pattern. The transparent common electrode is provided to overlap with the conductive pattern arranged to overlap with the light-shielding layer having the eaves in a side of the liquid crystal and to protrude compared with the light-shielding layer having the eaves in a planar view. | 06-04-2015 |
20150226994 | LIQUID CRYSTAL DISPLAY APPARATUS - A liquid crystal display apparatus that controls liquid crystals with a pixel structure having a red pixel, a green pixel, a blue pixel, and a white pixel as a basic unit. Voltage-transmittance characteristics of the liquid crystals corresponding to the white pixel are different from voltage-transmittance characteristics of the liquid crystals corresponding to each of the red pixel, the green pixel, and the blue pixel. | 08-13-2015 |
20160091762 | LIQUID CRYSTAL PANEL, LIQUID CRYSTAL DISPLAY DEVICE INCLUDING LIQUID CRYSTAL PANEL, AND METHOD OF MANUFACTURING LIQUID CRYSTAL PANEL - A pretilt angle of a liquid crystal molecule on the side of an array substrate is formed such that the liquid crystal molecule goes away from the array substrate in a direction to the left when viewed from a position facing a display surface of a liquid crystal panel. The pretilt angle on the side of a counter substrate is formed such that the liquid crystal molecule goes away from the counter substrate in a direction to the right when viewed from a position facing the display surface. The directions to the left and the right define a direction X corresponding to a horizontal direction of the liquid crystal panel. A direction of a delay phase axis of a biaxial phase difference film is arranged in a position rotated anticlockwise in an angular range from over 0° to 1° from the direction X. | 03-31-2016 |
Patent application number | Description | Published |
20110236283 | NOx REMOVAL CATALYST FOR HIGH-TEMPERATURE FLUE GAS, MANUFACTURING METHOD THEREOF, AND NOx REMOVAL METHOD FOR HIGH-TEMPERATURE FLUE GAS - A NOx removal catalyst for high-temperature flue gas according to the present invention is a NOx removal catalyst for high-temperature flue gas that contains nitrogen oxide in which tungsten oxide with the number of molecular layers of tungsten oxide (WO | 09-29-2011 |
20120294789 | CO SHIFT CATALYST, CO SHIFT REACTOR, AND METHOD FOR PURIFYING GASIFIED GAS - A CO shift catalyst according to the present invention is one that reforms carbon monoxide (CO) in gas. The CO shift catalyst includes: active ingredients including one of molybdenum (Mo) and iron (Fe) as a main ingredient and one of nickel (Ni) and ruthenium (Ru) as an accessory ingredient; and one or at least two oxides of titanium (Ti), zirconium (Zr), and cerium (Ce) as a carrier supporting the active ingredients. The CO shift catalyst can be used for a CO shift reactor | 11-22-2012 |
20130287665 | CARRIER FOR NOx REDUCTION CATALYST - A NOx reduction catalyst carrier yields a NOx reduction catalyst with an improved permissible dose of poisoning substances such as arsenic. More specifically, the present invention relates to a NOx reduction catalyst carrier comprising TiO | 10-31-2013 |
20140080695 | EXHAUST GAS TREATMENT CATALYST AND METHOD FOR REGENERATING THE SAME - Provided are an exhaust gas treatment catalyst for denitrifying an exhaust gas including sulfur oxides and vanadium discharged from a heavy oil combustion boiler, including: a support comprising any one or all of titanium oxide and silica wherein a content of silica is from 10% to 20%, and an active component supported in the support and comprising one selected from the group consisting of vanadium and tungsten. | 03-20-2014 |
20140329668 | NOx REMOVAL CATALYST FOR HIGH-TEMPERATURE FLUE GAS, MANUFACTURING METHOD THEREOF, AND NOx REMOVAL METHOD FOR HIGH-TEMPERATURE FLUE GAS - A NOx removal catalyst for high-temperature flue gas according to the present invention is a NOx removal catalyst for high-temperature flue gas that contains nitrogen oxide in which tungsten oxide with the number of molecular layers of tungsten oxide (WO | 11-06-2014 |
20140346403 | CARBON MONOXIDE SHIFT REACTION APPARATUS AND CARBON MONOXIDE SHIFT REACTION METHOD - A CO shift reaction apparatus is configured to suppress degradation of catalytic activity of a CO shift catalyst containing molybdenum and prolong the life of the catalyst. A CO shift reaction method uses the CO shift reaction apparatus. The CO shift reaction apparatus is configured to reform carbon monoxide contained in gas and includes a CO shift catalyst containing molybdenum; a reactor at least comprising: a gas inlet for introducing gas; a CO shift catalyst layer filled with the CO shift catalyst and through which the introduced gas passes; and a gas outlet for discharging the gas which has passed through the CO shift catalyst layer; and cooling means configured to cool the CO shift catalyst layer. | 11-27-2014 |
20140369915 | CATALYST FOR HYDROLYSIS OF CARBONYL SULFIDE AND HYDROGEN CYANIDE AND USE OF TITANIUM DIOXIDE-BASED COMPOSITION - Provided are a catalyst for hydrolysis and use of a titanium dioxide-based composition which are capable of removing COS and HCN simultaneously at high degradation percentages. The catalyst for hydrolysis is a catalyst for hydrolysis of carbonyl sulfide and hydrogen cyanide, having at least: an active component containing, as a main component, at least one metal selected from the group consisting of barium, nickel, ruthenium, cobalt, and molybdenum; and a titanium dioxide-based support supporting the active component. | 12-18-2014 |
20150291898 | CO SHIFT CATALYST, CO SHIFT REACTOR, AND METHOD FOR PURIFYING GASIFICATION GAS - Provided is a CO shift catalyst that reforms carbon monoxide (CO) in a gas. The CO shift catalyst includes an active component containing either molybdenum (Mo) or iron (Fe) as a main component, and either nickel (Ni) or ruthenium (Ru) as an accessory component, and a carrier which carries the active component and consists of one or two or more kinds of oxides of titanium (Ti), zirconium (Zr), and cerium (Ce). A temperature during catalyst manufacturing firing is set to 600° C. or higher, and an average pore size of the carrier is set to 300 Å or more. | 10-15-2015 |
20150291899 | CO SHIFT CATALYST, CO SHIFT REACTOR, AND METHOD FOR PURIFYING GASIFICATION GAS - Provided is a CO shift catalyst that reforms carbon monoxide (CO) in a gas. The CO shift catalyst includes: an active component including either molybdenum (Mo) or iron (Fe) as a main component, and either nickel (Ni) or ruthenium (Ru) as an accessory component; a promoter component including any one kind of component selected from the group consisting of calcium (Ca), potassium (K), sodium (Na), phosphorus (P), and magnesium (Mg); and a carrier which carries the active component and the promoter component, and includes one or more kinds of oxides of titanium (Ti), zirconium (Zr), and cerium (Ce). | 10-15-2015 |
20150299592 | CO SHIFT CATALYST, CO SHIFT REACTOR, AND METHOD FOR PURIFYING GASIFICATION GAS - Provided is a CO shift catalyst that reforms carbon monoxide (CO) in a gas. The CO shift catalyst includes: an active component including either molybdenum (Mo) or iron (Fe) as a main component, and either nickel (Ni) or ruthenium (Ru) as an accessory component; and a carrier which carries the active component, and includes a composite oxide of two or more kinds of elements selected from the group consisting of titanium (Ti), zirconium (Zr), cerium (Ce), silica (Si), aluminum (Al), and lanthanum (La). | 10-22-2015 |
20160002032 | CARBON MONOXIDE SHIFT REACTION APPARATUS AND CARBON MONOXIDE SHIFT CONVERSION METHOD - A carbon monoxide (CO) Shift reaction apparatus and a CO shift conversion method are capable of increasing the service life of a CO shift catalyst and reducing loss of energy. The CC) shift reaction apparatus includes a plurality of CO shift reaction units in which a plurality of CO shift catalysts haying mutually different active-temperature regions are arranged in a gas flow direction. | 01-07-2016 |
20160032202 | CO SHIFT CATALYST, CO SHIFT REACTION APPARATUS, AND METHOD FOR PURIFYING GASIFIED GAS - A CO shift catalyst according to the present invention reforms carbon monoxide (CO) in gas. The CO shift catalyst has one of molybdenum (Mo) or iron (Fe) as a main component and has an active ingredient having one of nickel (Ni) or ruthenium (Ru) as an accessory component and one or two or more kinds of oxides from among titanium (Ti), zirconium (Zr), and cerium (Ce) for supporting the active ingredient as a support. The temperature at the time of manufacturing and firing the catalyst is equal to or higher than 550° C. | 02-04-2016 |
Patent application number | Description | Published |
20090022643 | SO3 REDUCTION CATALYST FOR PURIFYING AN EXHAUST GAS, PREPARATION PROCESS THEREOF, AND EXHAUST GAS PURIFYING METHOD USING THE CATALYST - To provide an SO | 01-22-2009 |
20090317672 | CO CONVERSION CATALYST FOR USE IN FUEL CELL IN DSS OPERATION, METHOD FOR PRODUCING THE SAME, AND FUEL CELL SYSTEM - To provide a CO conversion catalyst for use in a fuel cell in a DSS operation, which includes a Cu—Al-Ox catalyst, in which the Cu—Al-Ox catalyst has a boehmite phase formed in at least a part of the Cu—Al-Ox catalyst. The CO conversion catalyst has an improved degree of dispersion of Cu metal by the boehmite phase formed therein, and hence can be prevented from sintering of copper caused due to steam, thereby achieving improved durability with respect to the function as the CO conversion catalyst. | 12-24-2009 |
20110082028 | MERCURY OXIDATION CATALYST AND METHOD FOR PRODUCING THE SAME - A highly durable mercury oxidation catalyst contains V | 04-07-2011 |
20120027659 | CO SHIFT CATALYST, CO SHIFT REACTOR, AND METHOD FOR PURIFYING GASIFIED GAS - A CO shift catalyst according to the present invention reforms carbon monoxide (CO) contained in gas. The CO shift catalyst is prepared from one or both of molybdenum (Mo) and cobalt (Co) as an active ingredient and an oxide of one of, or a mixture or a compound of, titanium (Ti), silicon (Si), zirconium (Zr), and cerium (Ce) as a carrier for supporting the active ingredient. The CO shift catalyst can be used in a halogen-resistant CO shift reactor ( | 02-02-2012 |
20120058036 | CO SHIFT CATALYST, METHOD FOR MANUFACTURING THE SAME, AND CO SHIFT REACTOR USING CO SHIFT CATALYST - A CO shift catalyst according to the present invention reforms carbon monoxide (CO) and is prepared from one or a mixture of platinum (Pt), ruthenium (Ru), iridium (Ir), and rhodium (Rh) as an active ingredient and at least one of titanium (Ti), aluminum (Al), zirconium (Zr), and cerium (Ce) as a carrier for supporting the active ingredient. The CO shift catalyst can be used in a halogen-resistant CO shift reactor ( | 03-08-2012 |
20120171097 | CATALYST FOR TREATING EXHAUST GASES, METHOD FOR PRODUCING THE SAME, AND METHOD FOR TREATING EXHAUST GASES - A catalyst for treating exhaust gases containing nitrogen monoxide, carbon monoxide and volatile organic compounds includes a plurality of layers, an upper layer of which has an active component contained uniformly therein and a lower layer of which has no active component contained therein. The catalyst is obtained through the steps of: forming the lower layer by coating the surface of substrate with a slurry of a porous inorganic compound, followed by drying; and forming the upper layer, which is to be the top surface of the catalyst, by coating the surface of the lower layer with a slurry of a porous inorganic compound that has the active component composed of one or more precious metals supported thereon, followed by drying. The oxidation power of the resulting catalyst is enhanced without increasing the amount of precious metal supported thereon. | 07-05-2012 |
Patent application number | Description | Published |
20100121621 | FRACTURE PREDICTION METHOD, PROCESSING DEVICE, PROGRAM PRODUCT AND RECORDING MEDIUM - When discretizing an analysis target part into plural elements and performing analysis, sheet thickness reduction rate or maximum principal strain at an equivalent position including a same element is compared by either a manner of combining two adjacent elements after the analysis or a manner of changing an element discretization size with two types and performing the analysis, and the element where the difference is large is extracted as a fracture risk portion. | 05-13-2010 |
20110172803 | FORMING SIMULATION METHOD, FORMING SIMULATOR, PROGRAM AND RECORDING MEDIUM THEREFOR, AND SIMULATION-BASED FORMING METHOD - A forming simulation method of an elastic-plastic material, which includes: calculating an element equivalent nodal force vector from stress tensor using a finite element method for one or a plurality of finite elements of a target configuration of the elastic-plastic material; and calculating the total equivalent nodal force vector of areas by integrating the element equivalent nodal force vector for the calculated one or more finite elements over all the areas or specified areas of the elastic-plastic material. | 07-14-2011 |
20120035890 | FORMING SIMULATION METHOD, FORMING SIMULATION APPARATUS, FORMING SIMULATION PROGRAM, AND RECORDING MEDIUM - The present invention provides a press forming simulation method using a finite element method for a sheet metal, in which a deformation state of a pressing tool is represented with high accuracy by superimposing at least one natural mode, for the surface shape of the pressing tool, in a no-load state. | 02-09-2012 |
20130006543 | FRACTURE DETERMINATION METHOD, FRACTURE DETERMINATION APPARATUS, PROGRAM, AND COMPUTER READABLE RECORDING MEDIUM - A fracture determination method for determining a fracture of a metal structure includes, when a fracture determination target portion has returned from a plastic state to an elastic state, given that a stress when the portion returned to the elastic state is (x, y)=(σ | 01-03-2013 |
20140021709 | METALLIC HOLLOW COLUMNAR MEMBER - A metallic hollow columnar member with a polygonal cross-section having at least five vertices and sides extending between the vertices, is disclosed. The polygonal cross-section is divided by two vertices (A, B) with small inside angles into two perimeter segments with a perimeter comprising one or more sides, and at least one of the two perimeter segments contains at least four sides. The respective inside angles of at least three vertices (V(i)) included in the perimeter segment which includes the at least four sides are equal to or less than 180°, the distance (SS(i)) between each of the at least three vertices (V(i)) and a straight line (L) connecting the two vertices (A, B) is shorter than ½ of the distance between the two vertices (A, B), and the inside angle of the vertex (C) with the smallest inside angle among the at least three vertices (V(i)) is larger than the inside angles of the two vertices (A, B). Vertices (VI) are present on the perimeter segment including the at least four sides, respectively between the vertex (C) with the smallest inside angle among the at least three vertices (V(i)) and one (A) of the two vertices (A, B), and between the vertex (C) with the smallest inside angle and the other (B) of the two vertices (A, B), said vertices (VI) having inside angles larger than the inside angle of the vertex (C) with the smallest inside angle. | 01-23-2014 |
20140170440 | HIGH STRENGTH STEEL SHEET AND HIGH STRENGTH GALVANIZED STEEL SHEET EXCELLENT IN SHAPEABILITY AND METHODS OF PRODUCTION OF SAME - High strength steel sheet which secures tensile maximum strength 900 MPa or more high strength while having excellent shapeability, which high strength steel sheet which is excellent in shapeability characterized by having a predetermined composition of ingredients, by the steel sheet structure including a ferrite phase and martensite phase, by the ratio of Cu particles incoherent with the bcc iron being 15% or more with respect to the Cu particles as a whole, by a density of Cu particles in the ferrite phase being 1.0×10 | 06-19-2014 |
20140182349 | PRESS FORMING METHOD AND VEHICLE COMPONENT - Disclosed is a press forming method press forming a workpiece between a die and a punch, while pushing the punch into the die by means of a relative motion of the die and the punch, the method includes: producing an intermediate molding ( | 07-03-2014 |
20140212684 | HIGH-STRENGTH GALVANIZED STEEL SHEET EXCELLENT IN BENDABILITY AND MANUFACTURING METHOD THEREOF - The present invention provides a high-strength galvanized steel sheet with maximum tensile strength of 900 MPa or more. The high-strength galvanized steel sheet has an alloyed galvanized layer formed on a surface of a base steel sheet containing predetermined amounts of C, Si, Mn, P, S, Al, N, O with a balance being constituted of iron and inevitable impurities, in which in a structure of the base steel sheet, retained austenite is limited to 8% or less in volume fraction, kurtosis K* of the hardness distribution between 2% hardness and 98% hardness is −0.30 or less, a ratio between Vickers hardness of surface layer of the base steel sheet and Vickers hardness of ¼ thickness of the base steel sheet is 0.35 to 0.70, and a content of iron in the alloyed galvanized layer is 8 to 12% in mass %. | 07-31-2014 |
20150175208 | VEHICLE FRAME MEMBER STRUCTURE WITH EXCELLENT IMPACT RESISTANCE PERFORMANCE - A vehicle frame member structure has a closed cross-sectional structure including a pair of first wall portions, and a pair of second wall portions connected to the pair of the first wall portions, in which first beads are provided on the pair of first wall portions along a circumferential direction of the closed cross-sectional structure, a second bead is provided on either of the pair of second wall portions along the closed cross-sectional circumferential direction on a line extending from the first bead in the circumferential direction, the first and second beads are connected in two corner portions between the first wall portions and the second wall portion, a recessed embossed portion is provided in a connection portion of the first and second beads in at least one of the corner portions, and the sheet thickness of the embossed portion is larger than that of the first or second wall portion. | 06-25-2015 |
20150203948 | COLD ROLLED STEEL SHEET, ELECTROGALVANIZED COLD-ROLLED STEEL SHEET, HOT-DIP GALVANIZED COLD-ROLLED STEEL SHEET, ALLOYED HOT-DIP GALVANIZED COLD ROLLED STEEL SHEET, AND MANUFACTURING METHODS OF THE SAME - A cold-rolled steel sheet containing: in mass %, C: 0.0005 to 0.0045%; Mn: 0.80 to 2.50%; Ti: 0.002 to 0.150%; B: 0.0005 to 0.01%, in which (1) Expression is satisfied, and a balance being composed of iron and impurities, in which at the position of ¼ thickness of a sheet thickness, a random intensity ratio (A) of the {332}<110> orientation is 3 or less, a random intensity ratio (B) of the {557}<9 16 5> orientation and a random intensity ratio (C) of the {111}<112> orientation are both 7 or more, and {(B)/(A) 5} and {(B)>(C)} are satisfied. | 07-23-2015 |
Patent application number | Description | Published |
20130059463 | CRYOGENIC CABLE TERMINATION CONNECTOR - A cryogenic cable termination connector having a small heat inflow from the outside and stable electrical insulation properties. The cryogenic cable termination connector includes a lead-out conductor led out from a site at a very low temperature to a site at room temperature via a liquid refrigerant layer, a refrigerant gas layer, and an oil layer. The lead-out conductor includes a capacitor-cone insulator in which plural metal foils for dividing an electric field from a high voltage level down to the ground voltage level are stacked through an insulator. Among electric field tilting portions in which voltage changes gradually from the high voltage level to the ground voltage level, an electric field tilting portion positioned at a lower part is located in the liquid refrigerant layer and an electric field tilting portion positioned at an upper part is located in the oil layer. | 03-07-2013 |
20130102474 | TERMINAL STRUCTURE OF SUPERCONDUCTING CABLE CONDUCTOR AND TERMINAL MEMBER USED THEREIN - In a terminal structure of a superconducting cable conductor, a terminal portion of the superconducting cable conductor is connected with a terminal member of a good conductor. The terminal portion includes a superconducting layer disposed on an outer periphery of a central support; and an insulating layer surrounding the superconducting layer. The insulating layer and the superconducting layer are partially removed to expose the central support and the superconducting layer in this order from an end of the superconducting cable conductor. The terminal member includes a metal sleeve which includes a first cylindrical portion whose inner surface is in close contact with an exposed portion of the central support; a second cylindrical portion which is soldered around an exposed portion of the superconducting layer; and a third cylindrical portion into which the insulating layer is inserted. | 04-25-2013 |
20130165326 | SUPERCONDUCTING CABLE LINE - In a superconducting cable line in which a superconducting cable is connected to a terminal connecting part or an intermediate connecting part, an offset part in which a superconducting cable is laid in a curved-shape is provided near the terminal connecting part or the intermediate connecting part. Further, when it is assumed that the superconducting cable is movable in the offset part, an external tube of the superconducting cable is fixed such that a maximum amplitude part which maximizes the amount of movement of the superconducting cable following thermal expansion and contraction of a cable core becomes immovable. | 06-27-2013 |
20130196857 | SUPERCONDUCTING CABLE - An AC superconducting cable with an insulating layer on the external circumference of a conductor, and wherein: the insulating layer includes a first insulating layer, a second insulating layer and a third insulating layer, from the inside layer to the outside layer; the insulating layer is impregnated with liquid nitrogen; the product of the dielectric constant ∈ | 08-01-2013 |
20130199821 | FIXATION STRUCTURE OF SUPERCONDUCTING CABLE AND FIXATION STRUCTURE OF SUPERCONDUCTING CABLE LINE - A fixation structure for fixing a superconducting cable including a cable core and a thermal insulation tube. The fixation structure includes a fixation box connected to the thermal insulation tube, including a hollow thermal insulation structure, and through which the cable core is passed, a fixation body for fixing the cable core on the inner wall of the fixation box, and a diameter-expanded reinforcement layer that is an electrical insulation layer that has a diameter decreasing toward both ends and is formed on the cable core. A refrigerant flows through the inside of the inner wall of the fixation box. The cable core is fixed on the inner wall with the fixation body through the diameter-expanded reinforcement layer. The structure implements a simple and low-cost fixation structure appropriate for an electric field design. | 08-08-2013 |
20140027141 | TERMINAL CONNECTING PART OF SUPERCONDUCTING CABLE - A terminal connecting part has: a low temperature container which is filled with a cooling medium; a conductor current lead which has one end immersed in the cooling medium and the other end led to a normal temperature part; and a conductor movable connecting terminal which electrically connects a superconductive conductor layer and the conductor current lead of a superconducting cable. The superconductive conductor layer of the superconducting cable which is stripped stepwise from a front end is connected to the conductor current lead through the conductor movable connecting terminal. The cable core of the superconducting cable is movable in a longitudinal direction and is rotatable in a circumferential direction while maintaining electrical connection between the superconductive conductor layer and the conductor current lead. The cable core is horizontally supported in the low temperature container. | 01-30-2014 |
Patent application number | Description | Published |
20130101731 | METHOD OF MANUFACTURING PIEZOELECTRIC ELEMENT, METHOD OF MANUFACTURING LIQUID EJECTION HEAD, AND METHOD OF MANUFACTURING LIQUID EJECTING APPARATUS - A method of manufacturing a piezoelectric element includes a process of forming on the surface of an electrode having lanthanum nickel preferentially aligned in (100) plane, at least on a surface thereof; a process of applying a precursor solution including at least Bi, Ba, Fe, and Ti onto the surface of the electrode, and a process of crystallizing the applied precursor solution to form the piezoelectric layer including a perovskite oxide preferentially aligned in (100) plane. | 04-25-2013 |
20150084151 | PHOTOELECTRIC CONVERSION ELEMENT AND METHOD OF MANUFACTURING THE SAME - A photoelectric conversion element includes a first electrode, a ferroelectric layer provided on the first electrode, and a second electrode provided on the ferroelectric layer, the second electrode being a transparent electrode, and a pn junction being formed between the ferroelectric layer and the first electrode or the second electrode. | 03-26-2015 |
20150276493 | THERMOELECTRIC CONVERSION ELEMENT, LIGHT DETECTION DEVICE, ELECTRONIC APPARATUS - A thermoelectric conversion element includes a pair of electrodes and a pyroelectric material, which is a ferroelectric layer, sandwiched between the pair of electrodes. The pyroelectric material includes at least Bi (bismuth), La (lanthanum), and Fe (iron). The molar fraction of La in a Bi/La site in the crystal structure of the pyroelectric material is 0.15 or more and 0.20 or less. Such a thermoelectric conversion element, and a light detection device and electronic apparatus which include the thermoelectric conversion element have a good pyroelectric function without including Pb (lead). | 10-01-2015 |
20160005950 | PIEZOELECTRIC ELEMENT, PIEZOELECTRIC ACTUATOR DEVICE, LIQUID EJECTING HEAD, LIQUID EJECTING APPARATUS, AND ULTRASONIC MEASURING APPARATUS - Provided is a piezoelectric element in which a first electrode, a piezoelectric layer, and a second electrode are sequentially stacked on a substrate, the piezoelectric layer being formed of composite oxide having a perovskite structure which contains at least Pb, Nb, and Ti, in which the piezoelectric layer has a tetragonal crystal structure, the crystal is oriented to {100} against the substrate, and regions are mixed in a crystal lattice, each region including a (100) plane and a (001) plane which are orthogonal to a stacking direction, and the composite oxide of the piezoelectric layer is represented by the following general expression. | 01-07-2016 |
20160097682 | PYROELECTRIC MATERIAL, MANUFACTURING METHOD OF PYROELECTRIC MATERIAL, PYROELECTRIC ELEMENT, MANUFACTURING METHOD OF PYROELECTRIC ELEMENT, THERMOELECTRIC CONVERSION ELEMENT, MANUFACTURING METHOD OF THERMOELECTRIC CONVERSION ELEMENT, THERMAL PHOTODETECTOR, MANUFACTURING METHOD OF THERMAL PHOTODETECTOR, AND ELECTRONIC INSTRUMENT - A pyroelectric material is constituted with an oxide containing iron, manganese, bismuth, and lanthanum, in which a ratio of the number of the manganese atoms to the sum of the number of the iron atoms, the number of the manganese atoms, and the number of titanium atoms is equal to or greater than 1.0 at % and equal to or less than 2.0 at %, and a ratio of the number of the titanium atoms to the sum of the number of the iron atoms, the number of the manganese atoms, and the number of the titanium atoms is equal to or greater than 0 at % and equal to or less than 4.0 at %. | 04-07-2016 |
20160111628 | PIEZOELECTRIC ELEMENT, METHOD FOR MANUFACTURING THE SAME, AND PIEZOELECTRIC ELEMENT-APPLIED DEVICE - A piezoelectric element has, from a substrate side, a first electrode, a piezoelectric layer containing a composite oxide of an ABO | 04-21-2016 |
Patent application number | Description | Published |
20110043574 | DROPLET EJECTING HEAD, DROPLET EJECTING APPARATUS, PIEZOELECTRIC DEVICE, AND CERAMIC - A droplet ejecting head including: a pressure chamber connected to a nozzle hole; and a piezoelectric device having ceramic member provided with an electrode. The ceramic member is made from a solid solution containing bismuth ferrate, bismuth potassium titanate, and bismuth manganate. | 02-24-2011 |
20110102514 | LIQUID EJECTING APPARATUS - Provided is a liquid ejecting apparatus which comprises a pressure generation chamber, a piezoelectric element, and a driving unit which supplies a driving signal to the piezoelectric element. The piezoelectric layer shows electric field induced phase transition and when among voltages at which the piezoelectric layer shows the electric field induced phase transition a voltage having a higher absolute value is defined as V | 05-05-2011 |
20110102517 | LIQUID-EJECTING HEAD, LIQUID-EJECTING APPARATUS, PIEZOELECTRIC ELEMENT, AND PIEZOELECTRIC MATERIAL - A liquid-ejecting head includes a pressure-generating chamber communicating with a nozzle opening, and a piezoelectric element. The piezoelectric layer contains a perovskite complex oxide containing Bi, La, Fe, and Mn and is ferroelectric. | 05-05-2011 |
20110102518 | LIQUID-EJECTING HEAD, LIQUID-EJECTING APPARATUS, PIEZOELECTRIC ELEMENT, AND PIEZOELECTRIC MATERIAL - A liquid-ejecting head includes a pressure-generating chamber communicating with a nozzle opening, and a piezoelectric element. The piezoelectric element has piezoelectric layer contains a perovskite complex oxide containing Bi, La, Fe, and Mn and can undergo electric-field-induced phase transition. | 05-05-2011 |
20110164095 | METHODS FOR MANUFACTURING LIQUID EJECTING HEAD AND PIEZOELECTRIC ELEMENT, LIQUID EJECTING HEAD, LIQUID EJECTING APPARATUS, AND PIEZOELECTRIC ELEMENT - A method for manufacturing a piezoelectric element comprising forming a titanium film containing titanium; forming a platinum film containing platinum on the titanium film; forming a piezoelectric precursor film containing bismuth, lanthanum, iron and manganese on the platinum film; crystallizing the piezoelectric precursor film to form a piezoelectric layer by firing the piezoelectric precursor film in an atmosphere of an inert gas; and forming an electrode on the piezoelectric layer. | 07-07-2011 |
20110216135 | LIQUID-EJECTING HEAD AND LIQUID-EJECTING APPARATUS - A liquid-ejecting head includes a pressure-generating chamber communicating with a nozzle opening and includes a piezoelectric element including a piezoelectric layer and electrodes. The piezoelectric layer contains bismuth sodium potassium titanate and satisfies the inequality 0≦P | 09-08-2011 |
20110220734 | LIQUID EJECTING HEAD AND LIQUID EJECTING APPARATUS - A liquid ejecting head includes a plate which is composed of a material containing silicon, a titanium oxide layer which is disposed above the plate, a bismuth-containing layer which is disposed above the titanium oxide layer and contains bismuth, a first electrode which is disposed above the bismuth-containing layer and composed of platinum, a piezoelectric layer which is disposed above the first electrode and composed of a piezoelectric material containing at least bismuth, and a second electrode which is disposed above the piezoelectric layer. | 09-15-2011 |
20110221830 | LIQUID EJECTING HEAD AND LIQUID EJECTING APPARATUS - A liquid ejecting head comprises a pressure-generating chamber communicating with a nozzle opening and a piezoelectric element including a piezoelectric layer and electrodes. The piezoelectric layer is composed of a compound oxide having a perovskite structure and containing bismuth, ferrate, manganese, potassium and titanium. | 09-15-2011 |
20110221831 | LIQUID EJECTION HEAD - A liquid ejection head, comprises a pressure generation chamber communicating with a nozzle opening and a piezoelectric element having a piezoelectric layer and an electrodes. The piezoelectric layer is a perovskite type complex oxide containing bismuth, iron, and cerium. The piezoelectric layer contains the cerium in a proportion of 0.01 mol % or more and 0.13 mol % or lower based on the total amount of the bismuth and the cerium. | 09-15-2011 |
20110221833 | LIQUID EJECTING HEAD, LIQUID EJECTING APPARATUS, AND PIEZOELECTRIC ELEMENT - A piezoelectric element includes a piezoelectric layer, and an electrode provided on the piezoelectric layer. The piezoelectric layer is composed of a compound oxide having a perovskite structure and containing bismuth lanthanum ferrate manganate and barium titanate. The molar ratio of the barium titanate to the total amount of the bismuth lanthanum ferrate manganate and the barium titanate is 0.09 or more and 0.29 or less. A liquid ejecting head includes a pressure-generating chamber communicating with a nozzle opening, and a piezoelectric element as described above. A liquid ejecting apparatus includes the above-described liquid ejecting head. | 09-15-2011 |
20120162320 | PIEZOELECTRIC ELEMENT, LIQUID EJECTING HEAD, AND LIQUID EJECTING APPARATUS - A piezoelectric element comprises a piezoelectric layer and an electrode provided to the piezoelectric layer. The piezoelectric layer is made of complex oxide having a Perovskite-type structure containing bismuth and iron, and the complex oxide includes at least one kind of a first doping element selected from the group consisting of sodium, potassium, calcium, strontium and barium and a second doping element formed from cerium. | 06-28-2012 |
20120182357 | PIEZOELECTRIC ELEMENT, LIQUID EJECTING HEAD, AND LIQUID EJECTING APPARATUS - A piezoelectric element comprises a piezoelectric layer consisting of a complex oxide having a perovskite structure containing bismuth and iron and electrodes provided to the piezoelectric layer. The complex oxide further contains a first dopant element that is at least one selected from the group consisting of sodium, potassium, calcium, strontium and barium, and a second dopant element that is cerium. | 07-19-2012 |
20120182358 | PIEZOELECTRIC ELEMENT, LIQUID EJECTING HEAD, AND LIQUID EJECTING APPARATUS - A piezoelectric element comprises a piezoelectric layer and an electrode which is provided with the piezoelectric layer. The piezoelectric layer comprises a complex oxide which has a perovskite structure including bismuth, iron, a first dopant element which is at least one type selected from a group formed from sodium, potassium, calcium, and strontium, and a second dopant element which is at least one type selected from a group formed from manganese, titanium, vanadium, niobium, and tin. | 07-19-2012 |
20120182359 | PIEZOELECTRIC ELEMENT, LIQUID EJECTING HEAD, AND LIQUID EJECTING APPARATUS - A piezoelectric element comprises a piezoelectric layer consisting a complex oxide having a perovskite structure containing bismuth and iron and electrodes provided to the piezoelectric layer. The complex oxide further contains a first dopant element that is magnesium and a second dopant element that is at least one of manganese, titanium, vanadium, niobium and tin. | 07-19-2012 |
20120182361 | PIEZOELECTRIC ELEMENT, LIQUID EJECTING HEAD, AND LIQUID EJECTING APPARATUS - A piezoelectric element comprises a piezoelectric layer consisting a complex oxide having a perovskite structure containing bismuth and iron and electrodes provided to the piezoelectric layer. The complex oxide further contains a first dopant element that is at least one of magnesium and zinc and a second dopant element that is cerium. | 07-19-2012 |
20140055531 | LIQUID EJECTING HEAD AND LIQUID EJECTING APPARATUS - A liquid ejecting head includes a plate which is composed of a material containing silicon, a titanium oxide layer which is disposed above the plate, a bismuth-containing layer which is disposed above the titanium oxide layer and contains bismuth, a first electrode which is disposed above the bismuth-containing layer and composed of platinum, a piezoelectric layer which is disposed above the first electrode and composed of a piezoelectric material containing at least bismuth, and a second electrode which is disposed above the piezoelectric layer. | 02-27-2014 |
20140097724 | LIQUID-EJECTING HEAD, LIQUID-EJECTING APPARATUS, PIEZOELECTRIC ELEMENT, AND PIEZOELECTRIC MATERIAL - A liquid-ejecting head includes a pressure-generating chamber communicating with a nozzle opening, and a piezoelectric element. The piezoelectric layer contains a perovskite complex oxide containing Bi, La, Fe, and Mn and is ferroelectric. | 04-10-2014 |
20140103780 | LIQUID-EJECTING HEAD, LIQUID-EJECTING APPARATUS, PIEZOELECTRIC ELEMENT, AND PIEZOELECTRIC MATERIAL - A liquid-ejecting head includes a pressure-generating chamber communicating with a nozzle opening, and a piezoelectric element. The piezoelectric element has piezoelectric layer contains a perovskite complex oxide containing Bi, La, Fe, and Mn and can undergo electric-field-induced phase transition. | 04-17-2014 |
20140111581 | LIQUID EJECTING APPARATUS - Provided is a liquid ejecting apparatus which comprises a pressure generation chamber, a piezoelectric element, and a driving unit which supplies a driving signal to the piezoelectric element. The piezoelectric layer shows electric field induced phase transition and when among voltages at which the piezoelectric layer shows the electric field induced phase transition a voltage having a higher absolute value is defined as V | 04-24-2014 |
20140146111 | LIQUID EJECTION HEAD - A liquid ejection head, comprises a pressure generation chamber communicating with a nozzle opening and a piezoelectric element having a piezoelectric layer and an electrodes. The piezoelectric layer is a perovskite type complex oxide containing bismuth, iron, and cerium. The piezoelectric layer contains the cerium in a proportion of 0.01 molar ratio or more and 0.13 molar ratio or lower based on the total amount of the bismuth and the cerium. | 05-29-2014 |
20140232794 | LIQUID-EJECTING HEAD AND LIQUID-EJECTING APPARATUS - A liquid-ejecting head includes a pressure-generating chamber communicating with a nozzle opening and includes a piezoelectric element including a piezoelectric layer and electrodes. The piezoelectric layer contains bismuth sodium potassium titanate and satisfies the inequality 0≦P | 08-21-2014 |
20140284480 | INFRARED SENSOR AND HEAT SENSING ELEMENT - An infrared sensor includes a heat sensing element, the heat sensing element includes a first electrode, a second electrode and a dielectric film formed between the first electrode and the second electrode. The heat sensing element senses heat based on a change of a resistance value. The dielectric film includes at least Bi and Fe. | 09-25-2014 |
20150129765 | INFRARED SENSOR, HEAT SENSING ELEMENT, AND HEAT SENSING METHOD USING THE SAME - An infrared sensor includes a heat sensing element in which a first electrode, a dielectric film, and a second electrode are sequentially laminated; and an electric charge detection device. The dielectric film represents antiferroelectricity and has a spontaneous polarization in a predetermined measurement environment. The electric charge detection device calculates an amount of relaxation current flowing by a change of the spontaneous polarization, and senses heat of the heat sensing element based on temperature dependence of the amount of relaxation current. | 05-14-2015 |
20150145926 | LIQUID EJECTING HEAD, LIQUID EJECTING APPARATUS, AND PIEZOELECTRIC ELEMENT - Provided is A piezoelectric element comprising a first electrode; a piezoelectric body layer provided on the first electrode, the piezoelectric body layer including 50 mol % or more of at least bismuth and iron, and the piezoelectric body layer having a current-time curve obtained by applying a voltage to the first electrode and the second electrode including a plurality of inflection points; and a second electrode provided on the piezoelectric body layer. | 05-28-2015 |