Patent application number | Description | Published |
20100029524 | GREASE - Grease which includes a base oil containing at least 50% by mass of a specific diester compound of a glycol with a branched carboxylic acid, and a specific diurea compound as a thickener. The grease is excellent in low-temperature performance and has low oil separation tendency. In particular, when used in a rotation transmission device having a built-in one-way clutch, the grease can provide satisfactory clutch engagement performance (intermeshing) at low temperatures and is less apt to cause oil separation under high centrifugal force. | 02-04-2010 |
20100035779 | GREASE - A grease which comprises a base oil containing at least 50% by mass of a diester compound having a total carbon number of 28 to 40 and represented by the general formula (I): | 02-11-2010 |
20130116158 | LUBRICANT COMPOSITIONS AND ROLLING DEVICE - The lubricant compositions of the invention include a saturated fatty acid triglyceride as a lubricating ingredient and further contain an antioxidant or a thickener which is magnesium stearate or calcium stearate. Consequently, the lubricant compositions are harmless even when eaten, have excellent lubricity, and impose little burden on the environment. The rolling device of the invention not only imposes little burden on the environment because the device is lubricated with either of these lubricant compositions, but also has excellent durability. | 05-09-2013 |
Patent application number | Description | Published |
20090265577 | Method of managing paths for an externally-connected storage system and method of detecting a fault site - Provided is a method of controlling a computer system that includes: a computer; a first storage device connected to the computer via a first path and a second path; and a second storage device externally-connected to the first storage system via a third path and connected to the computer via a fourth path, the first storage device providing a first storage area to the computer, the second storage device including a second storage area corresponding to the first storage area, the method including: judging whether or not a fault has occurred in at least one of the first to fourth paths; selecting, a path used for access to the first or second storage area; and transmitting the access request for the first or second storage area by using the selected path. Accordingly, in the computer system, an application can be prevented from being stopped despite a fault in a path. | 10-22-2009 |
20100115154 | INFORMATION PROCESSING SYSTEM AND METHOD OF ALLOCATING I/O TO PATHS IN SAME - Provided is an information processing system that communicates with a storage apparatus through a plurality of paths P | 05-06-2010 |
20140359212 | COMPUTER SYSTEM AND DATA INPUT/OUTPUT METHOD - A storage apparatus includes multiple ports communicable with a server, multiple processor cores and multiple LUs (Logical Units). For each port, a port responsible core, which is a processor core to accept an I/O request received by the port, is specified. For each LU, an LU responsible core, which is a processor core responsible for I/O, is specified. The LU responsible core may be dynamically changed. The server periodically acquires identification information about the LU responsible cores from the storage apparatus. When transmitting an I/O request, the server selects a non-cross call path, which is such a path that the LU responsible core and the port responsible core are the same processor core, from among multiple paths to an I/O destination LU, which is an LU specified by the transmission target I/O request, and transmits the transmission target I/O request via the selected path. | 12-04-2014 |
Patent application number | Description | Published |
20140065491 | SECONDARY BATTERY - A secondary battery which includes a positive electrode and a negative electrode, wherein the negative electrode has a negative electrode collector and a negative electrode active material layer, and the negative electrode collector has a base material which is formed of aluminum foil and an resin film which has a thickness of 0.01 to 5 μm and does not allow a nonaqueous electrolyte to permeate therethrough. | 03-06-2014 |
20150086850 | ANODE FOR SECONDARY BATTERY, METHOD FOR PRODUCING SAME, AND SECONDARY BATTERY - In this anode for a secondary battery, method for producing same, and secondary battery, an anode active material is laminated on a surface of a metal foil, the anode active material contains at least titanium dioxide, and the titanium dioxide contains a Brookite crystal phase and contains an amorphous phase in a ratio of 1 vol % to 20 vol %. | 03-26-2015 |
20150093649 | METHOD OF PRODUCING CURRENT COLLECTOR FOR ELECTROCHEMICAL ELEMENT, METHOD OF PRODUCING ELECTRODE FOR ELECTROCHEMICAL ELEMENT, CURRENT COLLECTOR FOR ELECTROCHEMICAL ELEMENT, ELECTROCHEMICAL ELEMENT, AND COATING LIQUID FOR FABRICATING CURRENT COLLECTOR FOR ELECTROCHEMICAL ELEMENT - An object of the present invention is to provide a method of producing a current collector for an electrochemical element that enable rapid charging and discharging with low internal resistance. The method of producing a current collector for an electrochemical element in the present invention has a step for coating a coating liquid onto a metal foil, the coating liquid containing at least one substance selected from the group consisting of methyl cellulose, ethyl cellulose, hydroxyethyl cellulose, hydroxypropyl cellulose, hydroxyethyl methyl cellulose, hydroxyethyl ethyl cellulose, hydroxypropyl methyl cellulose, hydroxyethyl starch, hydroxypropyl starch, dextrin, pullulan, dextran, guar gum and hydroxypropyl guar gum; an organic acid having valence of two or more or a derivative thereof, carbon particles and an organic solvent, followed by removing the organic solvent and forming a coating layer on the metal foil. | 04-02-2015 |
20150213967 | ELECTRIC STORAGE DEVICE AND METHOD FOR PRODUCING THE SAME - An electricity storage device including at least one electrode having one metal tab lead and plural electrode plates. The electrode plate includes a metal foil, an undercoat layer formed on one surface or both surfaces of the metal foil, and an active material layer formed on a surface of the undercoat layer. The undercoat layer includes a carbon material and the undercoat layer has a coating weight per unit area of one surface of 0.01 to 3 g/m | 07-30-2015 |
20150255788 | NEGATIVE ELECTRODE FOR SECONDARY BATTERY AND SECONDARY BATTERY - An object of the present invention is to provide a secondary battery capable of rapid charging and discharging at a high current, in which, even when a titanium-containing oxide is used as a negative electrode active material, the internal resistance and impedance of the secondary battery are low without adding a material, which does not contribute to electrical capacity, such as a conductive assistant to a negative electrode active material layer in a large amount. Provided is a negative electrode for a secondary battery including: metal foil; and a negative electrode active material layer that is formed on a single surface or both surfaces of the metal foil and includes a titanium-containing oxide as a negative electrode active material, in which a film containing a conductive material is formed between the metal foil and the negative electrode active material layer. | 09-10-2015 |
20150287983 | METHOD FOR PRODUCING ANODE ACTIVE MATERIAL FOR SECONDARY BATTERY, ANODE ACTIVE MATERIAL FOR SECONDARY BATTERY, METHOD FOR PRODUCING ANODE FOR SECONDARY BATTERY, ANODE FOR SECONDARY BATTERY, AND SECONDARY BATTERY - This method for producing an anode active material for a secondary battery is provided with a step for forming titanium dioxide by means of hydrolysis by adding a titanium-containing compound to an acidic aqueous solution, and furthermore, by means of adding a compound containing an alkaline earth metal and a condensed phosphate, the surface of the titanium dioxide is covered by the condensed phosphate containing the alkaline earth metal in a manner so that the amount of elemental phosphorus atoms and the amount of alkaline earth metal are each in the range of 0.1 to 10 mass % with respect to the mass of titanium dioxide, thus synthesizing the anode active material ( | 10-08-2015 |
Patent application number | Description | Published |
20080223434 | SOLAR CELL AND PROCESS FOR PRODUCING THE SAME - The present invention provides a solar cell that is useful for industry and has high photoelectric conversion efficiency and a method of manufacturing the same. A solar cell according to an aspect of the invention includes: a substrate; a buffer layer that is formed on the substrate and is composed of a group-III nitride semiconductor; and a group-III nitride semiconductor layer (p-type layer/an n-type layer) that has a p-n junction therein and is formed on the buffer layer. At least one of the buffer layer and the group-III nitride semiconductor layer having the p-n junction therein has a compound semiconductor layer formed by a sputtering method. | 09-18-2008 |
20090205707 | SOLAR CELL AND METHOD FOR PRODUCING THE SAME - The object of the present invention is to provide a solar cell which is industrially beneficial and has high light conversion efficiency; and a method for producing a solar cell; and the present invention provides a solar cell comprising a substrate, a power generation layer for converting received light into electrical power, a translucent electrode, and another electrode, when light travels through each member from a first surface thereof, a surface opposite to the first surface is defined as a second surface, the power generation layer is formed at a second surface side of the substrate, the translucent electrode is formed on one surface of the power generation layer, and another electrode is formed on the other surface of the power generation layer, wherein the translucent electrode comprises hexagonal In | 08-20-2009 |
20100261308 | SOLAR CELL AND PROCESS FOR PRODUCING THE SAME - The present invention provides a method of manufacturing a solar cell, comprising forming a buffer layer comprising a group-III nitride semiconductor on a substrate using a sputtering method, and forming a group-III nitride semiconductor layer and electrodes on the buffer layer. The group-III nitride semiconductor layer is formed on the buffer layer by at least one selected from the group consisting of the sputtering method, a MOCVD method, an MBE method, a CBE method, and an MLE method, and the electrodes are formed on the group-III nitride semiconductor layer. | 10-14-2010 |
Patent application number | Description | Published |
20130196230 | COATING SOLUTION, ELECTRIC COLLECTOR, AND METHOD FOR PRODUCING ELECTRIC COLLECTOR - A coating solution comprising (A) water or a mixed solvent of water and an organic solvent, (B) an electrical conducting material, and (C) at least one selected from the group consisting of polysaccharides and polysaccharide derivatives as essential components, and (D) at least one selected from the group consisting of a polybasic organic acid and a polybasic organic acid derivative as an optional component, wherein mass W | 08-01-2013 |
20130295458 | CURRENT COLLECTOR - A current collector wherein Layer a comprising electrically conductive particles such as electrically conductive carbon; a binding agent such as chitosan, chitin and the like; and organic acid such as trimellitic anhydride, pyromellitic anhydride, 1,2,3,4-butanetetracarboxylic acid and the like is provided on one or both surfaces of a metal foil such as an aluminum foil, a copper foil and the like, and the coverage of the electrically conductive particles is 50 to 100%, and the thickness of the Layer a is 5 μm or less. An electrode wherein Layer b comprising an electrode active material is provided on a surface having the Layer a of the current collector. An electrochemical element comprising the electrode. | 11-07-2013 |
20130323589 | CURRENT COLLECTOR - A current collector for an electrochemical element including an aluminum foil showing a peak in the range between 945 cm | 12-05-2013 |
Patent application number | Description | Published |
20090263112 | HEAT TREATMENT APPARATUS AND METHOD FOR HEATING SUBSTRATE BY LIGHT IRRADIATION - In light-irradiation heating with a total irradiation time of one second or less, two-stage irradiation is performed, including a first stage of light irradiation of a semiconductor wafer, which irradiation produces an output waveform that reaches a peak at a given emission output; and a second stage of supplemental light irradiation of the semiconductor wafer, which irradiation is started after the peak, producing an emission output smaller than the above given emission output. The emission output in the second stage is two thirds or less than the above given emission output at the peak. The first-stage light-irradiation time is between 0.1 and 10 milliseconds, and the second-stage light-irradiation time is 5 milliseconds or more. This allows the temperature of the semiconductor wafer even at a somewhat greater depth below the surface to be raised to some extent while allowing the surface temperature to be maintained at a generally constant processing temperature. | 10-22-2009 |
20090285568 | HEAT TREATMENT APPARATUS AND METHOD FOR HEATING SUBSTRATE BY PHOTO-IRRADIATION - In photo-irradiation heating with a total photo-irradiation time of one second or less, after initial photo-irradiation of a semiconductor wafer is performed while increasing an emission output to a target value, succeeding photo-irradiation of the semiconductor wafer is performed while maintaining the emission output within a range of plus or minus 20% from the target value. The photo-irradiation time for the initial photo-irradiation ranges from 0.1 to 10 milliseconds, and the photo-irradiation time for the succeeding photo-irradiation ranges from 5 milliseconds to less than one second. This allows the temperature of the semiconductor wafer even at a somewhat greater depth below the surface to be raised to some extent while allowing the surface temperature to be maintained at a generally constant processing temperature, thus achieving both the activation of implanted ions and the repair of introduced defects without any thermal damage to the semiconductor wafer. | 11-19-2009 |
20120057855 | Heat Treatment Apparatus Emitting Flash of Light - Flash lamps connected to short-pulse circuits and flash lamps connected to long-pulse circuits are alternately arranged in a line. The duration of light emission from the flash lamps connected to the long-pulse circuits is longer than the duration of light emission from the flash lamps connected to the short-pulse circuits. A superimposing of a flash of light with a high peak intensity from the flash lamps that emit light for a short time and a flash of light with a gentle peak from the flash lamps that emit light for a long time can increase the temperature of even a deep portion of a substrate to an activation temperature or more without heating a shallow portion near the substrate surface more than necessary. This achieves the activation of deep junctions without causing substrate warpage or cracking. | 03-08-2012 |
20120061374 | Heat Treatment Apparatus Emitting Flash of Light - Flash lamps connected to short-pulse circuits and flash lamps connected to long-pulse circuits are alternately arranged in a line. The duration of light emission from the flash lamps connected to the long-pulse circuits is longer than the duration of light emission from the flash lamps connected to the short-pulse circuits. A superimposing of a flash of light with a high peak intensity from the flash lamps that emit light for a short time and a flash of light with a gentle peak from the flash lamps that emit light for a long time can increase the temperature of even a deep portion of a substrate to an activation temperature or more without heating a shallow portion near the substrate surface more than necessary. This achieves the activation of deep junctions without causing substrate warpage or cracking. | 03-15-2012 |
20120063751 | Heat Treatment Apparatus Emitting Flash of Light - Flash lamps connected to short-pulse circuits and flash lamps connected to long-pulse circuits are alternately arranged in a line. The duration of light emission from the flash lamps connected to the long-pulse circuits is longer than the duration of light emission from the flash lamps connected to the short-pulse circuits. A superimposing of a flash of light with a high peak intensity from the flash lamps that emit light for a short time and a flash of light with a gentle peak from the flash lamps that emit light for a long time can increase the temperature of even a deep portion of a substrate to an activation temperature or more without heating a shallow portion near the substrate surface more than necessary. This achieves the activation of deep junctions without causing substrate warpage or cracking. | 03-15-2012 |
20120114316 | HEAT TREATMENT APPARATUS AND METHOD FOR HEATING SUBSTRATE BY LIGHT IRRADIATION - In light-irradiation heating with a total irradiation time of one second or less, two-stage irradiation is performed, including a first stage of light irradiation of a semiconductor wafer, which irradiation produces an output waveform that reaches a peak at a given emission output; and a second stage of supplemental light irradiation of the semiconductor wafer, which irradiation is started after the peak, producing an emission output smaller than the above given emission output. The emission output in the second stage is two thirds or less than the above given emission output at the peak. The first-stage light-irradiation time is between 0.1 and 10 milliseconds, and the second-stage light-irradiation time is 5 milliseconds or more. | 05-10-2012 |
20130043229 | HEAT TREATMENT APPARATUS AND METHOD FOR HEATING SUBSTRATE BY LIGHT IRRADIATION - In light-irradiation heating with a total irradiation time of one second or less, two-stage irradiation is performed, including a first stage of light irradiation of a semiconductor wafer, which irradiation produces an output waveform that reaches a peak at a given emission output; and a second stage of supplemental light irradiation of the semiconductor wafer, which irradiation is started after the peak, producing an emission output smaller than the above given emission output. The emission output in the second stage is two thirds or less than the above given emission output at the peak. The first-stage light-irradiation time is between 0.1 and 10 milliseconds, and the second-stage light-irradiation time is 5 milliseconds or more. This allows the temperature of the semiconductor wafer even at a somewhat greater depth below the surface to be raised to some extent while allowing the surface temperature to be maintained at a generally constant processing temperature. | 02-21-2013 |
20140162467 | HEAT TREATMENT APPARATUS EMITTING FLASH OF LIGHT - Flash lamps connected to short-pulse circuits and flash lamps connected to long-pulse circuits are alternately arranged in a line. The duration of light emission from the flash lamps connected to the long-pulse circuits is longer than the duration of light emission from the flash lamps connected to the short-pulse circuits. A superimposing of a flash of light with a high peak intensity from the flash lamps that emit light for a short time and a flash of light with a gentle peak from the flash lamps that emit light for a long time can increase the temperature of even a deep portion of a substrate to an activation temperature or more without heating a shallow portion near the substrate surface more than necessary. This achieves the activation of deep junctions without causing substrate warpage or cracking. | 06-12-2014 |
Patent application number | Description | Published |
20110262115 | HEAT TREATMENT METHOD AND HEAT TREATMENT APPARATUS FOR HEATING SUBSTRATE BY EMITTING FLASHING LIGHT - A first flash heating is performed in which a flash lamp emits a first flashing light to a semiconductor wafer having been heated to a first preheating temperature equal to or lower than 650 degrees C. by a light emission from a halogen lamp so that the temperature of a surface of the semiconductor wafer reaches 1000 degrees C. or higher. Then, a second flash heating is performed in which a second flashing light is emitted to the semiconductor wafer having been further heated by a light emission of the halogen lamp. Performing the first flash heating can suppress diffusion of impurity in the subsequent second flash heating. In the second flash heating, the impurity is activated and introduced crystal defects are recovered. | 10-27-2011 |
20120238110 | HEAT TREATMENT METHOD AND HEAT TREATMENT APPARATUS FOR HEATING SUBSTRATE BY IRRADIATING SUBSTRATE WITH FLASH OF LIGHT - The first flash irradiation is performed on a semiconductor wafer preheated to 500° C. to heat a front surface of the semiconductor wafer. Thereafter, the second flash irradiation is performed to reheat the front surface of the semiconductor wafer before the temperature of the front surface of the semiconductor wafer becomes equal to the temperature of a back surface of the semiconductor wafer. Thus, the second flash irradiation is performed before the temperature of the front surface of the semiconductor wafer falls. Even if less energy is consumable by the second flash irradiation, the efficiency of heating of the front surface of the semiconductor wafer resulting from each iteration of the flash irradiation is improved. | 09-20-2012 |
20120244725 | HEAT TREATMENT METHOD AND HEAT TREATMENT APPARATUS FOR HEATING SUBSTRATE BY IRRADIATING SUBSTRATE WITH LIGHT - First irradiation which causes an emission output from a flash lamp to reach its maximum value over a time period in the range of 1 to 20 milliseconds is performed to increase the temperature of a front surface of a semiconductor wafer from a preheating temperature to a target temperature for a time period in the range of 1 to 20 milliseconds. This achieves the activation of the impurities. Subsequently, second irradiation which gradually decreases the emission output from the maximum value over a time period in the range of 3 to 50 milliseconds is performed to maintain the temperature of the front surface within a ±25° C. range around the target temperature for a time period in the range of 3 to 50 milliseconds. This prevents the occurrence of process-induced damage while suppressing the diffusion of the impurities. | 09-27-2012 |
20130078822 | HEAT TREATMENT METHOD FOR HEATING SUBSTRATE BY IRRADIATING SUBSTRATE WITH FLASH OF LIGHT - First flash irradiation from flash lamps is performed on an upper surface of a semiconductor wafer supported on a temperature equalizing ring of a holder to cause the semiconductor wafer to jump up from the temperature equalizing ring into midair. While the semiconductor wafer is in midair above the temperature equalizing ring, second flash irradiation from the flash lamps is performed on the upper surface of the semiconductor wafer to increase the temperature of the upper surface of the semiconductor wafer to a treatment temperature. Cracking in the semiconductor wafer is prevented because the second flash irradiation is performed while the semiconductor wafer is in midair and subject to no restraints. | 03-28-2013 |
20130259457 | HEAT TREATMENT APPARATUS FOR HEATING SUBSTRATE BY IRRADIATING SUBSTRATE WITH FLASH OF LIGHT - Three support members made of silicon carbide are provided fixedly on an inner periphery of the support ring. The support members are inclined at an angle in the range of 15 to 30 degrees with respect to a horizontal plane. With an outer peripheral edge of a semiconductor wafer supported by the three support members, a heating treatment is performed by irradiating the semiconductor wafer with halogen light from halogen lamps. Silicon carbide absorbs the halogen light better than quartz. The support members support the outer peripheral edge of the semiconductor wafer in point contacting relationship, so that the contact between a holder and the semiconductor wafer is minimized. This minimizes the disorder of the temperature distribution of the semiconductor wafer due to the support members to achieve the uniform heating of the semiconductor wafer. | 10-03-2013 |
20130260546 | HEAT TREATMENT APPARATUS AND HEAT TREATMENT METHOD FOR HEATING SUBSTRATE BY IRRADIATING SUBSTRATE WITH FLASH OF LIGHT - After the completion of the transport of a semiconductor wafer into a chamber, the flow rate of nitrogen gas supplied into the chamber is decreased. In this state, a preheating treatment and flash irradiation are performed. The flow rate of nitrogen gas supplied into the chamber is increased when the temperature of the front surface of the semiconductor wafer is decreased to become equal to the temperature of the back surface thereof after reaching its maximum temperature by the irradiation of the substrate with a flash of light. Thereafter, the supply flow rate of nitrogen gas is maintained at a constant value until the semiconductor wafer is transported out of the chamber. This achieves the reduction in particles deposited on the semiconductor wafer while suppressing adverse effects resulting from the nonuniform in-plane temperature distribution of the semiconductor wafer. | 10-03-2013 |
20140161429 | THERMAL PROCESSING APPARATUS AND THERMAL PROCESSING METHOD FOR HEATING SUBSTRATE BY LIGHT IRRADIATION - A susceptor that holds a semiconductor wafer placed thereon is capable of moving up and down inside a chamber. For preheating with a halogen lamp, the susceptor moves to a preheating position. The preheating position is a height of the susceptor that achieves the most uniform in-plane illumination distribution of light emitted from the halogen lamp and applied to the semiconductor wafer. After the preheating is finished, the susceptor moves to a flash heating position for irradiation with a flash from a flash lamp. The flash heating position is a height of the susceptor that achieves the most uniform in-plane illumination distribution of a flash emitted from the flash lamp and applied to the semiconductor wafer. | 06-12-2014 |
20140270734 | LIGHT IRRADIATION TYPE HEAT TREATMENT APPARATUS AND HEAT TREATMENT METHOD - Four wafer pins are fixed in a chamber and spaced at intervals of 90 degrees. Four support pins are provided in a wafer pocket of a susceptor and spaced at intervals of 90 degrees. The four wafer pins and the four support pins are disposed concyclically in an alternating manner at intervals of 45 degrees. When halogen lamps irradiate a semiconductor wafer with light to heat the semiconductor wafer, the susceptor is moved upwardly and downwardly, so that the semiconductor wafer is shifted between the wafer pins and the support pins. This eliminates the occurrence of a problem such that the quartz pins which are relatively low in temperature are continuously kept in contact with particular places of the semiconductor wafer to improve the uniformity of the in-plane temperature distribution of the semiconductor wafer. | 09-18-2014 |
20140329340 | HEAT TREATMENT METHOD AND HEAT TREATMENT APPARATUS - After a substrate implanted with impurities is heated to a preheating temperature, the front surface of the substrate is heated to a target temperature by irradiating the front surface of the substrate with a flash of light. Further, the flash irradiation is continued to maintain the temperature of the front surface near the target temperature for a predetermined time period. At this time, a flash irradiation time period in the flash heating step is made longer than a heat conduction time period required for heat conduction from the front surface of the substrate to the back surface thereof, and a difference in temperature between the front and back surfaces of the substrate is controlled to be always not more than one-half of an increased temperature from the preheating temperature to the target temperature during the flash irradiation. This alleviates the concentration of stresses resulting from a difference in thermal expansion between the front and back surfaces of the substrate to thereby prevent the cracking of the substrate. | 11-06-2014 |
20150311080 | HEAT TREATMENT METHOD AND HEAT TREATMENT APPARATUS FOR HEATING SUBSTRATE BY EMITTING FLASHING LIGHT - A first flash heating is performed in which a flash lamp emits a first flashing light to a semiconductor wafer having been heated to a first preheating temperature equal to or lower than 650 degrees C. by a light emission from a halogen lamp so that the temperature of a surface of the semiconductor wafer reaches 1000 degrees C. or higher. Then, a second flash heating is performed in which a second flashing light is emitted to the semiconductor wafer having been further heated by a light emission of the halogen lamp. Performing the first flash heating can suppress diffusion of impurity in the subsequent second flash heating. In the second flash heating, the impurity is activated and introduced crystal defects are recovered. | 10-29-2015 |
Patent application number | Description | Published |
20090095521 | CIRCUIT BOARD AND METHOD OF MANUFACTURING THE SAME - A circuit board has plated through holes which are laid out with a fine pitch and meets requirements relating to characteristics such as the thermal expansion coefficient of the circuit board. A method of manufacturing a circuit board includes: a step of forming a core portion by thermal compression bonding prepregs which include first fibers that conduct electricity and second fibers that do not conduct electricity, which have the second fibers disposed at positions where plated through holes will pass through, and which are impregnated with resin; a step of forming through holes at positions in the core portion where the second fibers are disposed; and a step of forming a conductive layer on inner surfaces of the through holes to form plated through holes at positions that do not interfere with the first fibers and thereby produce a core substrate. | 04-16-2009 |
20090146112 | COMPOSITE MATERIAL AND METHOD OF PRODUCING THE SAME - The composite material, which comprises carbon materials and resin, is capable of giving original characteristics of the carbon materials, e.g., carbon fibers, in case of, for example, being used in a circuit board having a core section including carbon fibers. The composite material of the present invention comprises: the carbon materials, which are composed of graphite or materials having graphite structures; and resin. Surfaces of the carbon materials are modified. The resin and the carbon materials are chemically or physically bonded. | 06-11-2009 |
20090151985 | METHOD OF DICING A CIRCUIT BOARD SHEET AND PACKAGE CIRCUIT BOARD - When package circuit boards are formed by dicing a circuit board sheet with a core substrate that conducts electricity, conductive material is not exposed from the outer side surfaces of the package circuit boards, thereby preventing electrical shorting of the package circuit boards. A method of dicing a circuit board sheet includes: a step of forming a circuit board sheet by forming a core portion that includes a conductive material and providing a wiring layer on the surface of the core portion; a step of forming concave channels in a thickness direction of the circuit board sheet from one surface of the circuit board sheet so as to pass through at least the core portion; a step of forming an insulating cover layer on a surface of the wiring layer and inside the concave channels; and a step of dicing the circuit board sheet within widths of the concave channels with positions of the concave channels as dicing positions. | 06-18-2009 |
20100051323 | PRINTED WIRING BOARD AND CONDUCTIVE WIRING LAYER - A printed wiring board with an insulating layer formed of an insulating material and a conductive wiring layer formed on a front surface of the insulating layer. The conductive wiring layer has a conductor and a filler. The filler is embedded in the conductor. The filler has a coefficient of thermal expansion smaller than the conductor. | 03-04-2010 |
20100122843 | CIRCUIT BOARD AND METHOD OF MANUFACTURING THE SAME - A circuit board has plated through holes which are laid out with a fine pitch and meets requirements relating to characteristics such as strength and thermal expansion coefficient. A method of manufacturing a circuit board includes: a step of forming a core portion by thermal compression bonding prepregs formed by disposing carbon fibers so as to produce openings at positions where plated through holes will pass through and impregnating the carbon fibers with resin; a step of forming through holes that pass inside the openings at positions of the openings in the core portion; and a step of forming a conductive layer on inner surfaces of the through holes to form plated through holes at positions that do not interfere with the carbon fibers and thereby produce a core substrate. | 05-20-2010 |
Patent application number | Description | Published |
20130249233 | ACCOMMODATION STRUCTURE FOR SADDLE TYPE VEHICLE - An accommodation structure for a saddle type vehicle wherein the accommodation space can be expanded by a simple and easy configuration. An opening is provided in a rear wall of an accommodation box that is opened and closed by an occupant's seat. Further, a sub-accommodation box is provided that is in the form of a box open in a forward direction and is mounted so as to close up the opening and be swollen rearwardly farther than the opening. | 09-26-2013 |
20130249238 | WINDBREAK STRUCTURE FOR SADDLE TYPE VEHICLE - A windbreak structure for a saddle type vehicle to provide an increase in the windshield effect behind a leg shield. Exhaust ports for letting a flow of air from the front of a vehicle body rearwardly are provided at a side end portion of a leg shield. Further, sideward covering portions are provided that serve as exhaust air guide portions that extend rearwardly on the inner side in a vehicle widthwise direction of the exhaust port. | 09-26-2013 |
20130249239 | AIR GUIDE STRUCTURE FOR SADDLE TYPE VEHICLE - An air guide structure for a saddle type vehicle for reducing the influence of a negative pressure on a rider. In an air guide structure for a motorcycle wherein a windscreen for the protection against air is provided on a front cover provided at a front portion of a vehicle body such that air is guided to the rear of the windscreen on the vehicle body to reduce a negative pressure to be generated behind the windscreen, an inlet port is provided between a central portion of a front end of the windscreen and the front cover. Further, a stepped portion that is formed stepwise in the forward and backward direction on an upper face of the front cover in the inside of the inlet port is provided, and a sectoral recessed portion is provided at a central portion of the stepped portion in the vehicle widthwise direction. | 09-26-2013 |
20130320696 | BODY COVER STRUCTURE FOR SADDLE-RIDE TYPE VEHICLE - A body cover structure for saddle-ride type vehicles that enables enhancement of the user's comfort while increasing the rigidity of covering members constituting a center tunnel part. Step floors are configured of forward inclined parts disposed ahead of the floors in a forward rising shape, horizontal parts disposed either substantially horizontally or in a rearwardly rising shape behind these forward inclined parts, and bent parts connecting the forward inclined parts and the horizontal parts. The middle covers are provided on the lower edges thereof with downwardly extending parts extending toward the bent parts. | 12-05-2013 |
20130320697 | WINDSHIELD STRUCTURE FOR SADDLE-RIDE TYPE VEHICLE - A windshield structure for a saddle-ride type vehicle to enhance a windshield effect by reducing a vacuum behind a leg shield and in the lateral center of the vehicle. The windshield structure for the saddle-ride type vehicle includes a front storage box that may be opened and closed that is provided in a surface of the leg shield on a side of a seat. A bottom covering portion is formed integrally with the leg shield and is formed to cover the front storage box from below. The bottom covering portion for covering the front storage box from below is formed with air discharge ports for releasing a flow of air from a front side of a vehicle body to a rear side of the leg shield. | 12-05-2013 |
20140062119 | LID LOCK STRUCTURE FOR SADDLE TYPE VEHICLE - A lid lock structure for a saddle type vehicle that can achieve a reduction in the weight of a vehicle body cover while a lock member is attached to a vehicle body cover side. The lid lock structure for a saddle type vehicle includes a lock member capable of locking a lid in a closed state that is fixed to an upper inner cover and placed on upper frames below the upper inner cover. | 03-06-2014 |
Patent application number | Description | Published |
20080240645 | OPTICAL INTEGRATED CIRCUIT AND OPTICAL INTEGRATED CIRCUIT MODULE - An optical integrated circuit | 10-02-2008 |
20080254566 | SURFACE-EMISSION SEMICONDUCTOR LASER DEVICE - A surface-emitting semiconductor laser device includes a semi-insulating substrate, a layer structure with a bottom multilayer reflector, an n-type cladding layer, an active layer structure for emitting laser, a p-type cladding layer and a top multilayer reflector with a dielectric material, consecutively formed on the semi-insulating substrate, the active layer structure, the p-type cladding layer and the top multilayer reflector, configuring a mesa post formed on a portion of the n-type cladding layer, the p-type cladding layer or the p-type multilayer reflector. The surface-emitting semiconductor laser includes a p-side electrode formed on another portion of the p-type cladding layer, and an n-side electrode formed on another portion of the n-type cladding layer. The n-side electrode includes a substantially uniform Au film and AuGeNi film or AuGe film consecutively formed on the n-type cladding layer, and an alloy is formed between said Au film and said AuGeNi film or AuGe film. | 10-16-2008 |
20080298420 | Surface emitting semiconductor laser element - A surface emitting laser is provided with an upper reflecting mirror having a photonic crystal structure with a point defect at the center, and emits a laser beam from the side of a lower reflecting mirror. An upper electrode is formed on the point defect at the center, and element resistance is reduced. A material transparent to a wavelength of the laser beam is used for a substrate. The emission efficiency is improved by reducing the element resistance of the photonic crystal surface emitting laser. | 12-04-2008 |
20090168829 | VERTICAL-CAVITY SURFACE-EMITTING LASER - A vertical-cavity surface-emitting laser (VCSEL) includes a substrate, and a layer structure including a first reflector, an active layer, and a second reflector, which are consecutively layered on the substrate, and a plurality of holes arranged in a two-dimensional structure periodically within a layer plane except for a specified area of the layer structure, wherein a pair of holes sandwiching therebetween the specific area and opposing each other have a dimension or shape different from the dimension or shape of others of the holes. | 07-02-2009 |
20100111468 | OPTICAL INTEGRATED CIRCUIT AND OPTICAL INTEGRATED CIRCUIT MODULE - An optical integrated circuit includes a planar lightwave circuit, and a semiconductor element, which are fixed at one contact surface. A semiconductor optical amplifier (SOA) and a turnaround waveguide having a turnaround portion are formed on a semiconductor substrate. The turnaround waveguide is turned around on the second substrate and is connected to an output port of the SOA. An input port and an output port of the turnaround waveguide are optically coupled at the contact surface with an input port and an output port of the optical waveguides respectively. | 05-06-2010 |
20100245987 | SEMICONDUCTOR OPTICAL AMPLIFIER - It is desirable to provide a semiconductor optical amplifier from which it becomes able to obtain a higher output power. A semiconductor optical amplifier in comprises an active wave guiding layer which comprises a passive core region that is formed of a semiconductor, and active cladding regions that are located at both sides of the passive core region and each of that is comprised of an active layer which is formed of a semiconductor and which has an index of refraction to be lower than that of the passive core region, wherein a light is wave guided with being amplified in the active wave guiding layer. Moreover, it is desirable for the active wave guiding layer to be formed of a compound semiconductor, and to be formed by integrating the passive core region and the active cladding regions to be monolithic on to a substrate that is formed of a compound semiconductor by making use of a process of a butt joint growth. | 09-30-2010 |
20130121632 | SOA-PLC HYBRID INTEGRATED POLARIZATION DIVERSITY CIRCUIT AND METHOD FOR MANUFACTURING THE SAME - The invention of the present application provides an SOA-PLC hybrid integrated polarization diversity circuit including a PLC-PBS chip and an SOA-COS whose respective waveguides are coupled to each other. The PLC-PBS chip includes: first and second optical waveguides; a Mach-Zehnder interferometer circuit; and a half-wave plate placed in the first optical waveguide which TM mode light is split into. The SOA-COS includes: a third optical waveguide connected to the first optical waveguide; a fourth optical waveguide connected to the second optical waveguide; and an SOA formed in at least one of the third and fourth optical waveguides. One end of the third optical waveguide and one end of the fourth optical waveguide are connected to a U-turn optical waveguide, the one ends being not connected to the first optical waveguide and the second optical waveguide, respectively. | 05-16-2013 |
20140078580 | OPTICAL AMPLIFIER DEVICE - An optical amplifier device comprising an input/output section that inputs incident light and outputs emission light; a polarized light splitting section that causes a polarized light component of the incident light input from the input/output section to branch, and outputs first polarization mode light having a first polarization and second polarization mode light having a second polarization different from the first polarization; a polarization converting section that receives the first polarization mode light, converts the first polarization to the second polarization, and outputs first polarization converted light; and an optical amplifying section that amplifies the first polarization converted light input to one end of a waveguide, outputs the resulting amplified first polarization converted light from another end of the waveguide, amplifies the second polarization mode light input to the other end of the waveguide, and outputs the resulting amplified second polarization mode light from the one end of the waveguide. | 03-20-2014 |
Patent application number | Description | Published |
20120258686 | COMMUNICATION SYSTEM - A femto cell base station includes a generating part that generates a SIP message including a terminal ID of a radio terminal and a check request for the terminal ID at a predetermined time, and a first transmitting part that transmits the SIP message generated by the generating part to a higher level apparatus in the communication system. | 10-11-2012 |
20120258743 | FEMTOCELL BASE STATION, GATEWAY SYSTEM, MAP-GW APPARATUS, COMMUNICATION SYSTEM, CONTROL METHOD, AND PROGRAM - A femtocell base station (FAP) converts, when information concerning a SMS is received from UE (User Equipment), the received information concerning the SMS into a SIP (Session Initiation Protocol) message including the received information concerning the SMS and transmits the converted SIP message to the core network side. The femtocell base station converts, when a SIP message including information concerning the SMS is received from the core network side, the information concerning the SMS included in the received SIP message into a message that can be recognized by the UE and transmits the converted information concerning the SMS to the UE. | 10-11-2012 |
20120270529 | COMMUNICATION SYSTEM AND APPARATUS FOR PROVIDING SUPPLEMENTARY SERVICE IN FEMTO CELL - When a femto cell base station used for a communication system provided with a function of providing a predetermined supplementary service receives first information indicating supplementary service control from a radio terminal, the femto cell base station converts the received information to a SIP (Session Initiation Protocol) message including the first information and transmits the SIP message to a higher apparatus in the communication system. | 10-25-2012 |
Patent application number | Description | Published |
20110269420 | COMMUNICATION SYSTEM, FEMTO BASE STATION, CALL SESSION CONTROL SERVER, HOME SUBSCRIBER SERVER, COMMUNICATION METHOD, AND PROGRAM - A communication system of the present invention is a communication system connected to a public communication network including emergency organization communication apparatus ( | 11-03-2011 |
20110269483 | COMMUNICATION SYSTEM, FEMTO ACCESS POINT AND COMMUNICATION METHOD - A Femto Access Point includes determination means for determining whether or not called side user equipment is accommodated in the Femto Access Point; and communication control means for, if the determination means has determined that the called side user equipment is accommodated in the Femto Access Point, sending out a Ring Back Tone to calling side user equipment. | 11-03-2011 |
20120021736 | FEMTO CELL BASE STATION, COMMUNICATION CONTROL APPARATUS, COMMUNICATION SYSTEM, CONTROL METHOD AND PROGRAM - The femto cell base station is a femto cell base station that connects a UE (User Equipment) to a core network side and includes storing means and control means. The storing means retains subscriber information of the UE visiting an area under control of the femto cell base station. The control means deletes the subscriber information of the UE, that is removed from the control of the femto cell base station, from the storing means. | 01-26-2012 |
20150201315 | COMMUNICATION SYSTEM AND APPARATUS FOR PROVIDING SUPPLEMENTARY SERVICE IN FEMTO CELL - When a femto cell base station used for a communication system provided with a function of providing a predetermined supplementary service receives first information indicating supplementary service control from a radio terminal, the femto cell base station converts the received information to a SIP (Session Initiation Protocol) message including the first information and transmits the SIP message to a higher apparatus in the communication system. | 07-16-2015 |
Patent application number | Description | Published |
20110120563 | GAS SUPPLY SYSTEM, SUBSTRATE PROCESSING APPARATUS AND GAS SUPPLY METHOD - A gas supply system for supplying a gas into a processing chamber for processing a substrate to be processed includes: a processing gas supply unit; a processing gas supply line; a first and a second branch line; a branch flow control unit; an additional gas supply unit; an additional gas supply line; and a control unit. The control unit performs, before processing the substrate to be processed, a processing gas supply control and an additional gas supply control by using the processing gas supply unit and the additional gas supply unit, respectively, wherein the additional gas supply control includes a control that supplies the additional gas at an initial flow rate greater than a set flow rate and then at the set flow rate after a lapse of a period of time. | 05-26-2011 |
20110171830 | SUBSTRATE PROCESSING METHOD, SYSTEM AND PROGRAM - A substrate processing method is used for a substrate processing system having a substrate processing device and a substrate transfer device. The substrate processing method includes a substrate transfer step of transferring a substrate and a substrate processing step of performing a predetermined process on the substrate. The substrate transfer step and the substrate processing step include a plurality of operations, and at least two operations among the plurality of the operations are performed simultaneously. Preferably, the substrate processing device includes an accommodating chamber, a mounting table placed in the accommodating chamber to be mounted thereon the substrate, and a heat transfer gas supply line for supplying a heat transfer gas to a space between the substrate mounted on the mounting table and the mounting table. | 07-14-2011 |
20110224818 | SUBSTRATE PROCESSING APPARATUS, METHOD FOR MODIFYING SUBSTRATE PROCESSING CONDITIONS AND STORAGE MEDIUM - A substrate processing apparatus includes a setting unit for setting substrate processing conditions for a substrate in a substrate processing unit for performing a process on the substrate; a detection unit for detecting an abnormality of the substrate processing unit while the substrate processing unit performs the process on the substrate under the substrate processing conditions; a stopping unit for stopping the process on the substrate of the substrate processing unit if the abnormality is detected; and a modifying unit for modifying the substrate processing conditions for a substrate on which the process is stopped to be performed by the stopping unit. Further, a method for modifying substrate processing conditions includes the steps of setting processing conditions; detecting an abnormality of the substrate processing unit; stopping the process if the abnormality is detected; and modifying the processing conditions for a substrate on which the process is stopped. | 09-15-2011 |
20120292290 | SUBSTRATE PROCESSING METHOD, SYSTEM AND PROGRAM - A substrate processing method is used for a substrate processing system having a substrate processing device and a substrate transfer device. The substrate processing method includes a substrate transfer step of transferring a substrate and a substrate processing step of performing a predetermined process on the substrate. The substrate transfer step and the substrate processing step include a plurality of operations, and at least two operations among the plurality of the operations are performed simultaneously. Preferably, the substrate processing device includes an accommodating chamber, a mounting table placed in the accommodating chamber to be mounted thereon the substrate, and a heat transfer gas supply line for supplying a heat transfer gas to a space between the substrate mounted on the mounting table and the mounting table. | 11-22-2012 |
Patent application number | Description | Published |
20110012465 | INTERIOR PERMANENT MAGNET ROTOR, ELECTRIC MOTOR USING THE SAME AND ELECTRIC DEVICE | 01-20-2011 |
20140306626 | MOTOR DRIVING DEVICE AND BRUSHLESS MOTOR - A motor driving device of the present invention is a motor driving device that incorporates so-called vector control of controlling a current applied to a motor winding in accordance with the position of a rotor. The motor driving device receives the input of a duty command value from a host controller via a command input port, for example. The motor driving device obtains a current command or a speed command as a command value such that the input duty command value is equal to the duty of a drive pulse output from an inverter. Then, the motor driving device performs vector control based on the obtained command value. | 10-16-2014 |
20150064023 | MOTOR CONTROLLER AND MOTOR CONTROL METHOD - A motor controller of the present invention comprises units which obtain information indicative of a motor speed (ω) and information indicative of motor torque (T), an air flow calculation section which calculates an air flow (Q) of a fan based on the motor speed (ω) and the motor torque (T); and a speed command generation section which generates a speed command (ω*) of a motor such that the air flow (Q) coincides with the predetermined air flow command (Q*). | 03-05-2015 |
20150233380 | MOTOR CONTROL DEVICE, MOTOR CONTROL METHOD, AND BLOWER APPARATUS - A motor control device which controls a motor for driving a blower unit, comprises: a target motor output calculating section which calculates a target motor output which causes an air flow of air supplied from the blower unit to coincide with a target air flow; and an operation command generating section which obtains the motor output of the motor, and generates a command for controlling a physical amount of the motor such that the motor output coincides with the target motor output based on a result of comparison between the motor output and the target motor output; and the target motor output calculating section is configured to calculate the target motor output as a product of a polynomial of variables derived by dividing the target air flow by the motor speed, and a cube of the motor speed. | 08-20-2015 |
Patent application number | Description | Published |
20120115619 | DAMPER MECHANISM - In this damper mechanism, when small fluctuations in torque input to the damper mechanism occur, small hysteresis torque is produced as a result of pressure contact between a radial plate and a first friction section. Consequently, the small torque fluctuations can be damped between the radial plate and the first friction region of the damper mechanism and can be output to an input shaft. In addition, along the direction of relative rotation of an annular plate and the radial plate, the friction coefficients of the annular plate and the radial plate become larger as the torsion angles of both plates become larger. Therefore, even when torque fluctuations become large, the hysteresis torque can be produced in accordance with the magnitude of the torque fluctuations. | 05-10-2012 |
20130073134 | VEHICLE CONTROL DEVICE AND VEHICLE CONTROL METHOD - HV-ECU executes a program including a step of executing rattling noise avoidance control when an engine operating point falls within a rattling noise producing range and when a requested torque Treq | 03-21-2013 |
20130190962 | POWERTRAIN, METHOD FOR CONTROLLING POWERTRAIN, AND DEVICE FOR CONTROLLING POWERTRAIN - A powertrain includes: an engine provided with a plurality of cylinders; a first motor generator coupled to an output shaft of the engine; and an ECU for controlling them. When misfire in the engine is detected, the output shaft of the engine is rotated by driving the first motor generator with ignition and supply of fuel to the engine being suspended. | 07-25-2013 |
20140335998 | POWER TRANSMISSION DEVICE FOR VEHICLE - A vehicle power transmission device is disposed on a hybrid vehicle having an engine and an electric motor, the vehicle power transmission device includes a first member having one of outer circumferential teeth disposed around one axial center or inner circumferential teeth meshing with the outer circumferential teeth and a second member having the other teeth, the inner circumferential teeth and the outer circumferential teeth meshes with each other to limit relative rotation around the one axial center between the first member and the second member, the relative rotation between the first member and the second member is limited to transmit torque of the electric motor to drive wheels. | 11-13-2014 |