Patent application number | Description | Published |
20100297521 | SOLID OXIDE FUEL CELL MANIFOLD AND CORRESPONDING STACK - A fuel cell and a fuel cell stack thereof includes separators, each of which includes a sandwiching section for sandwiching an electrolyte electrode assembly, a bridge and a reactant gas supply section, wherein the sandwiching section has a fuel gas channel and an oxygen-containing gas channel, the bridge has a fuel gas supply channel for supplying the fuel gas to the fuel gas channel and an oxygen-containing gas supply channel for supplying the oxygen-containing gas to the oxygen-containing gas channel, and a fuel gas supply passage for supplying the fuel gas to the fuel gas supply channel and an oxygen-containing gas supply passage for supplying the oxygen-containing gas to the oxygen-containing gas supply channel extend through the reactant gas supply section in the stacking direction. | 11-25-2010 |
20110143238 | FUEL CELL SYSTEM - A casing of a fuel cell system is divided into a fluid supply section, a module section, and an electrical equipment section. A detector, a fuel gas supply apparatus, an oxygen-containing gas supply apparatus, and a water supply apparatus are provided in the fluid supply section. A fuel cell module and a combustor are provided in the module section. A power converter and a control device are provided in the electrical equipment section. The module section is interposed between the fluid supply section and the electrical equipment section. | 06-16-2011 |
20120003561 | FUEL CELL - A fuel cell comprises an electrolyte electrode assembly which includes an anode electrode, a cathode electrode, and an electrolyte; a separator which includes a sandwiching portion; a fuel gas channel which is formed at a first surface of the sandwiching portion, and is covered by the anode electrode; fuel gas outlets which are formed around the fuel gas channel; an oxygen-containing gas channel which is formed at a second surface of the sandwiching portion, and is covered by the cathode electrode; and oxygen-containing gas outlets which are formed around the oxygen-containing gas channel, in which the oxygen-containing gas outlets are formed at phases different from phases of the fuel gas outlets in a thickness direction of the separator. | 01-05-2012 |
20120100452 | FUEL CELL STACK - The present invention provides a fuel cell stack that has a separator arranged between fuel cells, the separator including: a sandwiching section which sandwiches an electrolyte electrode assembly and includes a fuel gas channel and a separately provided oxygen-containing gas channel; a bridge which is connected to the sandwiching section and includes a reactant gas supply channel; a reactant gas supply section which is connected to the bridge and includes a reactant gas supply passage; and a connecting section that connects the sandwiching section to the bridge. | 04-26-2012 |
20120164549 | FUEL CELL - The present invention provides a fuel cell in which an electrolyte electrode assembly having an electrolyte sandwiched between an anode and a cathode is provided between separators, each of the separators including: a sandwiching section which sandwiches an electrolyte electrode assembly and includes a fuel gas channel and a separately provided oxygen-containing gas channel; a bridge which is connected to the sandwiching section and includes a reactant gas supply channel; a reactant gas supply section which is connected to the bridge and includes a reactant gas supply passage; and a connecting section that connects the sandwiching section to the bridge. | 06-28-2012 |
20130029235 | FUEL CELL SYSTEM AND METHOD OF CONTROLLING THE FUEL CELL SYSTEM - A fuel cell system includes a fuel cell module and a condenser apparatus. The condenser apparatus includes a first condenser using an oxygen-containing as a coolant, and a second condenser using hot water stored in a hot water tank as the coolant. Further, the fuel cell system includes a control device for controlling at least one of a flow rate of the exhaust gas supplied to the first condenser and a flow rate of the exhaust gas supplied to the second condenser based on at least any of a water level of the hot water in the hot water tank, a temperature of the hot water in the hot water tank, and a water level of the condensed water in the condenser apparatus. | 01-31-2013 |
20140051000 | FUEL CELL SYSTEM - A fuel cell system control device includes a carbon amount determination unit for determining the carbon amount in fuel gas supplied to a fuel cell stack depending on required output of the stack, a temperature detector unit for detecting temperature of a steam reformer and temperature of an evaporator, an S/C determination unit for determining a range of steam/carbon ratio based on the temperature of the steam reformer, a water supply amount determination unit for determining a range of the water supply amount to the evaporator based on the carbon amount and the steam/carbon ratio, an evaporator operating state determination unit for determining whether the temperature of the evaporator is a temperature determined based on the range of the water supply amount, and a reformer control unit for controlling the steam reformer and a partial oxidation reformer based on the result of the evaporator operating state determination unit. | 02-20-2014 |
20140087280 | FUEL CELL SYSTEM - A fuel cell system includes a fuel cell module and a control device. The control device includes a partial oxidation reformer adjuster, a combustion starter, and a power generator. Based on at least any of the reforming state in the partial oxidation reformer, the combustion state in the exhaust gas combustor and the temperature of the fuel cell stack, the partial oxidation reformer adjuster adjusts the temperature of the partial oxidation reformer, the supply amount of raw fuel, and the supply amount of oxygen-containing gas, the combustion starter starts combustion in the exhaust gas combustor, and the power generator starts power generation in the fuel cell stack. | 03-27-2014 |
Patent application number | Description | Published |
20090048230 | COMPOUNDS AND COMPOSITIONS USEFUL AS CATHEPSIN S INHIBITORS - The present invention relates to the use of a 2-cyanopyrimidine compound of the formula | 02-19-2009 |
20090192148 | Organic Compounds - The invention relates to 3,5-substituted piperidine compounds, these compounds for use in the diagnostic and therapeutic treatment of a warm-blooded animal, especially for the treatment of a disease (=disorder) that depends on activity of renin; the use of a compound of that class for the preparation of a pharmaceutical formulation for the treatment of a disease that depends on activity of renin; the use of a compound of that class in the treatment of a disease that depends on activity of renin; pharmaceutical formulations comprising a 3,5-substituted piperidine compound, and/or a method of treatment comprising administering a 3,5-substituted piperidine compound, a method for the manufacture of a 3,5-substituted piperidine compound, and novel intermediates and partial steps for its synthesis. | 07-30-2009 |
20090312304 | ORGANIC COMPOUNDS - 3,4-substituted piperidine compounds, these compounds for use in the diagnostic and therapeutic treatment of a warm-blooded animal, especially for the treatment of a disease (=disorder) that depends on activity of renin; the use of a compound of that class for the preparation of a pharmaceutical formulation for the treatment of a disease that depends on activity of renin; the use of a compound of that class in the treatment of a disease that depends on activity of renin; pharmaceutical formulations comprising a 3,4-substituted piperidine compound, and/or a method of treatment comprising administering a 3,4-substituted piperidine compound, a method for the manufacture of a 3,4-substituted piperidine compound, and novel intermediates and partial steps for their synthesis are disclosed. The 3,4-disubstituted piperidine compounds have the formula I, | 12-17-2009 |
Patent application number | Description | Published |
20080319018 | ORGANIC COMPOUNDS - The present invention relates to a compound of the formula I | 12-25-2008 |
20100160305 | 3, 4, 5 - Substituted Piperidine Compounds - 3,4,5-substituted piperidine compounds, these compounds for use in the diagnostic and therapeutic treatment of a warm-blooded animal, especially for the treatment of a disease (=disorder) that depends on activity of renin; the use of a compound of that class for the preparation of a pharmaceutical formulation for the treatment of a disease that depends on activity of renin; the use of a compound of that class in the treatment of a disease that depends on activity of renin; pharmaceutical formulations comprising a 3,4,5-substituted piperidine compound, and/or a method of treatment comprising administering a 3,4,5-substituted piperidine compound, a method for the manufacture of a 3,4,5-substituted piperidine compound, and novel intermediates and partial steps for its synthesis. | 06-24-2010 |
20130005770 | ORGANIC COMPOUNDS - The present invention relates to a compound of the formula I | 01-03-2013 |
Patent application number | Description | Published |
20140322895 | METHOD FOR MANUFACTURING A BONDED SOI WAFER - According to the present invention, there is provided a method for manufacturing an SOI wafer having the step of performing a first sacrificial oxidation treatment on the aforementioned bonded SOI wafer in which the delamination has been performed after a first RTA treatment has been performed thereon and then performing a second sacrificial oxidation treatment thereon after a second RTA treatment has been performed thereon, wherein the first and second RTA treatments are performed under a hydrogen gas containing atmosphere and at a temperature of 1100° C. or more, wherein after a thermal oxide film has been formed on the aforementioned SOI layer front surface by performing only thermal oxidation by a batch type heat treating furnace at a temperature of 900° C. or more and 1000° C. or less in the first and second sacrificial oxidation treatments, a treatment for removing the thermal oxide film is performed. | 10-30-2014 |
20150249035 | METHOD FOR MANUFACTURING SOI WAFER - The present invention is a method for manufacturing an SOI wafer, including: implanting one or more gas ion selected from a hydrogen ion and a rare gas ion into a bond wafer composed of a semiconductor single crystal substrate from a surface of the bond wafer to form an ion-implanted layer; bonding the surface from which the ion is implanted into the bond wafer and a surface of a base wafer through an oxide film; and then delaminating the bond wafer at the ion-implanted layer by performing a delamination heat treatment with a heat treatment furnace to form the SOI wafer, wherein after the delamination heat treatment, a temperature of the heat treatment furnace is decreased to 250° C. or less at temperature-decreasing rate of less than 3.0° C./min, and then the SOI wafer and the bond wafer after delamination are taken out from the heat treatment furnace. | 09-03-2015 |
20150340279 | METHOD FOR MANUFACTURING SOI WAFER AND SOI WAFER - The present invention provides a method for manufacturing SOI wafer, wherein, after plasma treatment has been performed on at least one surface of a bonding interface of the bond wafer and a bonding interface of the base wafer, bonding is performed through the oxide film, and the bond wafer is delaminated at the ion implanted layer by the delamination heat treatment comprising a first heat treatment at 250° C. or less for 2 hours or more and a second heat treatment at 400° C. to 450° C. for 30 minutes or more. Thereby, the method of manufacturing the SOI wafer that is small in SOI layer film thickness range, is small in surface roughness of the SOI layer surface, is smooth in shape of a terrace part and has no defects such as voids, blisters and so forth in the SOI layer can be provided. | 11-26-2015 |
Patent application number | Description | Published |
20100112781 | METHOD FOR MANUFACTURING SOI WAFER - The present invention provides a method for manufacturing an SOI wafer, including: a step of preparing a base wafer consisting of a p | 05-06-2010 |
20100112824 | METHOD FOR FORMING SILICON OXIDE FILM OF SOI WAFER - The invention is a method for forming a silicon oxide film of an SOI wafer, the method by which at least thermal oxidation treatment is performed (a process (A)) on an SOI wafer having an oxide film on the back surface and, after the thermal oxidation treatment, heat treatment is additionally performed (a process (B)) in a non-oxidizing atmosphere at a temperature higher than the temperature at which the thermal oxidation treatment was performed, whereby a silicon oxide film is formed on the front surface of an SOI layer. This provides a method for forming a silicon oxide film of an SOI wafer, the method that can prevent an SOI wafer from being warped after thermal oxidation treatment even when an SOI wafer having a thick oxide film on the back surface is used and a silicon oxide film for forming a device is formed by thermal oxidation on the front surface on the SOI layer side, and can reduce exposure failure and adsorption failure caused by warpage of the SOI wafer and enhance yields of device fabrication. | 05-06-2010 |
20100129993 | METHOD FOR MANUFACTURING SOI WAFER - The present invention provides a method for manufacturing an SOI wafer wherein an HCl gas is mixed in a reactive gas at a step of forming a silicon epitaxial layer on an entire surface of an SOI layer of the SOI wafer having an oxide film on a terrace portion. As a result, it is possible to provide the method for manufacturing an SOI wafer that can easily grow the silicon epitaxial layer on the SOI layer of the SOI wafer having the oxide film on the terrace portion, suppress warpage of the SOI wafer to be manufactured, reduce generation of particles even at subsequent steps, e.g., device manufacture, and decrease a cost for manufacturing such an SOI wafer. | 05-27-2010 |
20110281420 | METHOD FOR MANUFACTURING SOI WAFER - A method for manufacturing an SOI wafer including implanting a gas ion into a bond wafer from a surface thereof to form an ion-implanted layer; bonding the ion-implanted surface of the bond wafer to a surface of a base wafer through an insulator film; and delaminating the bond wafer at the ion-implanted layer to manufacture the SOI wafer. The method further includes immersing the bonded wafer prior to the delamination of the bond wafer at the ion-implanted layer into a liquid capable of dissolving the insulator film or exposing the bonded wafer to a gas capable of dissolving the insulator film so that the insulator film located between the bond wafer and the base wafer is etched from an outer circumferential edge toward a center of the bonded wafer. | 11-17-2011 |
20120135584 | METHOD FOR MANUFACTURING SOI WAFER - A method for manufacturing an SOI wafer includes performing a flattening heat treatment on an SOI wafer under an atmosphere containing an argon gas, in which conditions of SOI wafer preparation are set so that a thickness of an SOI layer of the SOI wafer to be subjected to the flattening heat treatment is 1.4 or more times thicker than that of a BOX layer, and the thickness of the SOI layer is reduced to less than a thickness 1.4 times the thickness of the BOX layer by performing a sacrificial oxidation treatment on the SOI layer of the SOI wafer after the flattening heat treatment. | 05-31-2012 |
20130023069 | METHOD FOR CHECKING ION IMPLANTATION CONDITION AND METHOD FOR MANUFACTURING SEMICONDUCTOR WAFER - A method for checking an ion implantation condition when ions are implanted over an entirety of one surface of a semiconductor wafer having an insulator film on the one surface, the method including checking whether the ions are implanted over the entirety of the one surface of the semiconductor wafer by directly or indirectly observing light emitted when the one surface of the semiconductor wafer is irradiated with an ion beam of the implanted ions throughout the ion implantation. | 01-24-2013 |
20130316522 | METHOD FOR MANUFACTURING SOI WAFER - The present invention is directed to a method for manufacturing an SOI wafer, the method by which treatment that removes the outer periphery of a buried oxide film to obtain a structure in which a peripheral end of an SOI layer of an SOI wafer is located outside a peripheral end of the buried oxide film, and, after heat treatment is performed on the SOI wafer in a reducing atmosphere containing hydrogen or an atmosphere containing hydrogen chloride gas, an epitaxial layer is formed on a surface of the SOI layer. As a result, there is provided a method that can manufacture an SOI wafer having a desired SOI layer thickness by performing epitaxial growth without allowing a valley-shaped step to be generated in an SOI wafer with no silicon oxide film in a terrace portion, the SOI wafer fabricated by an ion implantation delamination method. | 11-28-2013 |
20140097523 | METHOD FOR MANUFACTURING BONDED WAFER AND BONDED SOI WAFER - A method for manufacturing a bonded wafer includes: an ion implantation step of using a batch type ion implanter; a bonding step of bonding an ion implanted surface of a bond wafer to a surface of a base wafer directly or through an insulator film; and a delamination step of delaminating the bond wafer at an ion implanted layer, thereby manufacturing a bonded wafer having a thin film on the base wafer, wherein the ion implantation into the bond wafer carried out at the ion implantation step is divided into a plurality of processes, the bond wafer is rotated on its own axis a predetermined rotation angle after each ion implantation, and the next ion implantation is carried out at an arrangement position obtained by the rotation. | 04-10-2014 |
20140186977 | METHOD FOR CALCULATING WARPAGE OF BONDED SOI WAFER AND METHOD FOR MANUFACTURING BONDED SOI WAFER - A method for calculating a warpage of a bonded SOI wafer includes: assuming that the epitaxial growth SOI wafer is a silicon single crystal wafer having the same dopant concentration as dopant concentration of the bond wafer; calculating a warpage A that occurs at the time of performing the epitaxial growth relative to the assumed silicon single crystal wafer; calculating a warpage B caused due to a thickness of the BOX layer of the epitaxial growth SOI wafer; determining a measured value of a warpage of the base wafer before bonding as a warpage C; and calculating a sum of the warpages (A+B+C) as the warpage of the bonded SOI wafer. | 07-03-2014 |
Patent application number | Description | Published |
20090066524 | WATER LEAKAGE MONITORING SYSTEM - A water leakage monitoring system including a water leakage position estimator which includes a periodic data acquiring unit for fetching predetermined-period flow rate pressure data stored in a monitoring device, and for fetching a signal related to a flow rate change and pressure changes expecting a water leakage reaction time calculating unit for calculating a pressure reaction time lag between two pressure changes, a pressure propagation velocity estimating unit for estimating a pressure propagation velocity using the pressure reaction time lag and a distance between two pressure gauges located in a water distribution block stored in a pipeline network map data, and a flow rate change position estimating unit for receiving a signal related to the flow rate change, and estimating a flow rate change position using pressure propagation velocity and a flow meter and pressure gauge locating positions of the pipeline network map data. | 03-12-2009 |
20110278208 | SEAWATER DESALINATION APPARATUS - According to one embodiment, a seawater desalination apparatus includes a pressure sensor configured to measure a pressure of seawater which is supplied to a reverse osmosis membrane that is configured to separate seawater into fresh water and condensed seawater and to discharge the fresh water and the condensed seawater, a sensor configured to measure a flow amount of the fresh water which is discharged from the reverse osmosis membrane, a sensor configured to measure a flow amount of the condensed seawater discharged from the reverse osmosis membrane or a flow amount of the seawater discharged from a booster pump, a sensor configured to measure a flow amount of the seawater which is supplied to a power recovery device, and a controller configured to execute control based on values measured by the sensors. | 11-17-2011 |
20120061300 | MEMBRANE FILTRATION SYSTEM - According to one embodiment, a membrane filtration system includes a raw water tank, a pretreatment membrane module, a raw water feed line, a high-pressure RO membrane module, a high-pressure line, a preceding power recovery unit which pressurize the pretreated water by transmitting the pressure of the concentrate to the pretreated water, a succeeding power recovery unit which pressurize the raw water by transmitting a remaining pressure of the concentrate to the raw water, a concentrate discharge line, a first pressure transmission line communicating to the power recovery unit by being branched from the high-pressure line, a second pressure transmission line communicating to the power recovery unit by being branched from the raw water feed line, and a valve provided in the drain line to regulate a discharge of the concentrate from the power recovery unit in accordance with a pressure loss in the pretreatment membrane module. | 03-15-2012 |
20120067791 | SEAWATER DESALINATION APPARATUS AND CHEMICAL INJECTION APPARATUS - According to one embodiment, a apparatus includes a controller configured to obtain values measured by a first sensor and a second sensor, receive pH target values at the entrance of a first reverse osmosis membrane and at the entrance of a second reverse osmosis membrane, and use a transfer function from the acid injection to pH at the entrance of the first reverse osmosis membrane, a transfer function from the alkaline injection to pH at the entrance of the first reverse osmosis membrane, a transfer function from the acid injection to pH at the entrance of the second reverse osmosis membrane, and a transfer function from the alkaline injection to pH at the entrance of the second reverse osmosis membrane, to control an injection rate of the acid injected from a first injection device and an injection rate of the alkali injected from a second injection device. | 03-22-2012 |
Patent application number | Description | Published |
20100232685 | IMAGE PROCESSING APPARATUS AND METHOD, LEARNING APPARATUS AND METHOD, AND PROGRAM - An image processing apparatus includes: an edge intensity detecting unit configured to detect the edge intensity of an image in increments of blocks having a predetermined size; a parameter setting unit configured to set an edge reference value used for extraction of an edge point that is a pixel used for detection of the blurred degree of the image based on a dynamic range that is difference between the maximum value and the minimum value of the edge intensities; and an edge point extracting unit configured to extract a pixel as the edge point with the edge intensity being equal to or greater than the edge reference value, and also the pixel value of a pixel within a block being included in an edge block that is a block within a predetermined range. | 09-16-2010 |
20100259649 | PHOTOGRAPHING APPARATUS AND METHOD, AND PROGRAM - A photographing apparatus is provided, which includes: a correction data acquiring section that acquires correction data for image correction; a recording section that records the correction data acquired by the correction data acquiring section; a photographing condition acquiring section that acquires image photographing conditions; a retrieving section that retrieves the correction data, corresponding to the photographing conditions acquired by the photographing condition acquiring section, from the correction data recorded in the recording section; and a photographing section that photographs an image on the basis of the correction data retrieved by the retrieving section. | 10-14-2010 |
20110013039 | IMAGE PROCESSING APPARATUS, IMAGE PROCESSING METHOD, AND PROGRAM - An apparatus for improving the quality of a captured image may include a first computing unit, a second computing unit, and an advice generating unit. The first computing unit may be configured to compute a first value representing a first aspect of the quality of a first image. The second computing unit may be configured to compute a second value representing a second aspect of the quality of the first image. The advice generating unit may be configured to generate advice for capturing a second image based on at least one of the first and second computed values. | 01-20-2011 |
20110206282 | Device, Method, and Program for Image Processing - An image processing device includes a subject region detector that detects a subject region from an input image; a cutting unit that cuts an image of the subject region from the input image; a priority calculator that calculates a priority of each of predetermined regions on a boundary with respect to the subject region, for the input image; a retrieval unit that retrieves a region similar to an image of a predetermined region with a top priority from among the priorities, from the input image after the image of the subject region is cut; a recovery unit that recovers the subject region by copying an image of an adjacent region that is adjacent to the region similar to the predetermined region retrieved by the retrieval unit and includes a region corresponding to a region cut as the subject region, and by pasting the image obtained by copying onto the region that is adjacent to the predetermined region with the top priority and cut as the subject region; and a composition unit that combines the image of the subject region cut by the cutting unit with the image with the subject region recovered by the recovery unit. | 08-25-2011 |
20110206294 | Image Processing Apparatus, Image Processing Method, and Program - An image processing apparatus includes: an input image energy map generation unit generating an input image energy map from an input image; a reduced energy map generation unit generating a reduced energy map; a reduction seam search unit searching a reduction seam formed by binding pixels of a path along which a cumulative energy value of energies of pixels is minimum; a partial seam search unit searching a partial seam formed by binding pixels with a minimum cumulative value; an input image energy map update unit updating the input image energy map by inserting and replacing a maximum energy value into the energies corresponding to all of the pixels of the input image on the input image energy map; and a reduction expansion unit reducing or expanding the input image by deleting the pixels forming the partial seam from the input image. | 08-25-2011 |
20110206295 | IMAGE PROCESSING APPARATUS, IMAGE PROCESSING METHOD, AND PROGRAM - An image processing apparatus includes: a subject region detection unit detecting regions of subjects included in an input image; a cropped region setting unit setting a region including all of the regions of the detected subjects as a cropped region; an expansion region addition unit adding an expansion region to expand an end of the cropped region only by a predetermined width; a cutting unit cutting a cut image formed from a cut region including the cropped region and the expansion region from the input image; a subject adaptation size change unit changing a size of an image formed from the cut region by deleting a region where an influence on the subjects is small in the cut image; and an entire image size changing unit changing the size of the entire image changed in size by the subject adaptation size change unit at a predetermined ratio. | 08-25-2011 |
20120070102 | Image Processing Apparatus and Method, and Program - The present invention relates to an image processing apparatus and method, and a program that are capable of more appropriately evaluating the image-capture state of an image. | 03-22-2012 |
20120121173 | IMAGE PROCESSING APPARATUS AND METHOD, AND PROGRAM - The present invention relates to an image processing apparatus and method, and a program that are capable of more easily identifying an area of a subject in an image. | 05-17-2012 |
20130084017 | IMAGE PROCESSING APPARATUS AND METHOD, PROGRAM AND RECORDING MEDIUM - An image processing apparatus includes a motion estimation processing section that detects a motion vector of block units which configure an image from a standard image and a reference image; a motion compensation processing section that produces a motion compensation image by performing motion compensation of the reference image using the motion vector; a difference calculation section that calculates a difference value between pixel values of a pixels of the standard image and pixel values of pixels of the motion compensation image; and a threshold value processing section that determines whether block noise is contained in the motion compensation image of a block unit or not by performing a threshold value processing on the difference value. | 04-04-2013 |
20130084024 | IMAGE PROCESSING APPARATUS, IMAGE PROCESSING METHOD, PROGRAM, AND RECORDING MEDIUM - There is provided an image processing apparatus including a local-motion-compensation-processing unit which generates a local-motion-compensation image by detecting a local motion vector, which is a motion vector for each block forming an image, from a standard image and a reference image, and performing motion compensation on the reference image using the local motion vector, a global-motion-compensation-processing unit which generates a global-motion-compensation image by calculating a global motion vector, which is a motion vector for an entire image between the standard image and the reference image, using the local motion vector, and performing motion compensation on the reference image using the global motion vector, and a blend processing unit which generates a blend-motion-compensation image by combining a pixel value of a pixel in the local-motion-compensation image and a pixel value of a pixel in the global-motion-compensation image based on a noise intensity for a luminance value of an image. | 04-04-2013 |
20140204228 | INFORMATION PROCESSING DEVICE, INFORMATION PROCESSING METHOD, AND IMAGING DEVICE - An amplification detection unit detects an amplification of a motion of an image in a motion correction with respect to the motion of the image generated by the motion, according to motion information which indicates a motion detection result and a frame rate of the image. An information suppressing unit suppresses the motion indicated by the motion information based on the detection result of the amplification detection unit such that the motion of the image is not amplified in the motion correction, and generates corrected motion information used in the motion correction. | 07-24-2014 |
Patent application number | Description | Published |
20120139239 | INVERTER GENERATOR - An inverter generator includes a motor, an electric generator and an ECU generating a pulse at each predetermined rotation angle of the motor. Estimating means estimates an initial electrical angle of alternating voltage produced by the generator from the pulse and calculates a phase shift angle to estimate continuous electrical angle of the alternating voltage. A converter converts the alternating current electric power into direct current electric power under d-q control based on the phase shift angle. An inverter converts the direct current electric power into alternating current output electric power. | 06-07-2012 |
20120139265 | INVERTER GENERATOR - An inverter generator used in combination with a motor and an ECU generating a pulse at each predetermined rotation angle of the motor is comprised of: an electric generator driven by the motor configured to generate alternating current electric power; estimating means for estimating an electrical angle of alternating voltage of the alternating current electric power from the pulse, the estimating means being electrically connected with the ECU; a converter configured to convert the alternating current electric power into direct current electric power, the converter electrically connected with the electric generator and the estimating means; and an inverter configured to convert the direct current electric power into alternating current output electric power, the inverter electrically connected with the converter. | 06-07-2012 |
20120229063 | INVERTER POWER GENERATOR - An inverter power generator includes a current controller | 09-13-2012 |
20120229065 | INVERTER POWER GENERATOR - An inverter includes a voltage command generator generating a voltage command value according to an externally specified voltage value, a PWM signal generator generating a PWM signal according to the voltage command value and frequency command value, and a switching unit generating a three-phase AC power according to the PWM signal. The voltage command generator decreases the voltage command value if the output current increases, to prevent the rotation speed of a prime move from suddenly changing. If the output current exceeds a preset upper current threshold, the voltage command value is clamped at a preset minimum output voltage, thereby securing the minimum output voltage for an increase in the output current. | 09-13-2012 |
20130221879 | METHOD OF CONTROLLING A CURRENT OF A MOTOR AND CONTROL DEVICE OF A MOTOR - The present invention is a control device of a motor, for drawing out a capacity of the motor as much as possible so as to achieve a high-speed high-output performance thereof while securing a stability, including: a converter unit configured to rectify and smooth an AC voltage, and to output a DC main circuit voltage; an inverter unit configured to pass a current for driving the motor, with the use of the main circuit voltage; a current detector configured to detect an armature current passing through the motor; a position detector disposed on the motor, the position detector being configured to detect a motor speed; and a current control unit configured to control, upon reception of a q-axis current command (Iqr), the armature current passing through the motor, by outputting a signal for driving the inverter unit, with the use of data from the current detector and data from the position detector. | 08-29-2013 |
20140328092 | INVERTER DEVICE AND INVERTER GENERATOR - An inverter device includes a voltage command value output unit that outputs a voltage command value, voltage sensors that detect output voltage from a switching circuit, a Fourier transform unit that performs frequency analysis on the output voltage detected by the respective voltage sensors, and a voltage correction value calculation unit that obtains harmonics with respect to a drive frequency of the switching circuit subjected to the frequency analysis by the Fourier transform unit and obtains a voltage correction coefficients for correcting the voltage command value so as to cancel the harmonics. The voltage correction value calculation unit calculates coefficients each for each degree of the harmonics and determines whether the coefficients converges when calculating the coefficients so as to obtain the voltage correction coefficients based on the coefficients which are determined to converge. | 11-06-2014 |
20150357822 | INVERTER ELECTRIC GENERATOR SYSTEM AND INVERTER ELECTRIC GENERATOR THEREOF - An inverter electric generator system is comprised of: master and at least one slave inverter generators, each inverter generator including a communication section, a controller section generating a PWM carrier and an inverter circuit switched by the PWM carrier to generate an alternative current with a controlled voltage and a controlled frequency, the communication sections being mutually connected to exchange a communication data, and the inverter circuits being connected in parallel so as to collect and output the alternative currents as an electric power output, wherein each of the controller sections is configured to synchronize any point of the PWM carrier with any bit of the communication data received by the communication section. The PWM carriers of the master and the slave inverter generators thereby mutually get synchronized. | 12-10-2015 |
Patent application number | Description | Published |
20140272692 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE COMPOSITION, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM USING THE SAME, PATTERN FORMING METHOD, MANUFACTURING METHOD OF ELECTRONIC DEVICE, ELECTRONIC DEVICE AND RESIN - There is provided an actinic ray-sensitive or radiation-sensitive composition comprising (P) a compound having a phenolic hydroxyl group and a group formed by substituting for the hydrogen atom in a phenolic hydroxyl group by a group represented by the specific formula, a resist film formed using the specific actinic ray-sensitive or radiation-sensitive composition, a pattern forming method containing steps of exposing and developing the resist film, a manufacturing method of an electronic device, containing the pattern forming method, and an electronic device manufactured by the specific manufacturing method of an electronic device. | 09-18-2014 |
20150086912 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM AND PATTERN FORMING METHOD USING THE SAME, MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE - There is provided an actinic ray-sensitive or radiation-sensitive resin composition comprising (P) a resin having a repeating unit (A) represented by the specific formula (I) capable of generating an acid on the side chain of the resin upon irradiation with an actinic ray or radiation, and a resist film formed with the actinic ray-sensitive or radiation-sensitive resin composition, and a pattern forming method comprising: exposing the resist film, and developing the exposed resist film, and a method for manufacturing a semiconductor device, containing the pattern forming method, and a semiconductor device manufactured by the manufacturing method of the semiconductor device. | 03-26-2015 |
20150132687 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM USING THE SAME, PATTERN FORMING METHOD, MANUFACTURING METHOD OF ELECTRONIC DEVICE, AND ELECTRONIC DEVICE - There is provided an actinic ray-sensitive or radiation-sensitive resin composition comprising (P) a resin containing a repeating unit represented by the specific formula (1) and a repeating unit represented by the specific formula (A); a resist film formed using the actinic ray-sensitive or radiation-sensitive resin composition; a pattern forming method comprising (i) a step of forming a film from the actinic ray-sensitive or radiation-sensitive resin composition, (ii) a step of exposing the film, and (iii) a step of developing the exposed film by using a developer to form a pattern; a method for manufacturing an electronic device, comprising the pattern forming method, and an electronic device manufactured by the manufacturing method of an electronic device. | 05-14-2015 |
20150132688 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM USING THE SAME, PATTERN FORMING METHOD, MANUFACTURING METHOD OF ELECTRONIC DEVICE, ELECTRONIC DEVICE AND RESIN - There is provided an actinic ray-sensitive or radiation-sensitive resin composition comprising (P) a resin having (a) a repeating unit represented by the specific formula; a resist film formed using the actinic ray-sensitive or radiation-sensitive resin composition; a pattern forming method comprising (i) a step of forming a film by using the actinic ray-sensitive or radiation-sensitive resin composition, (ii) a step of exposing the film, and (iii) a step of developing the exposed film by using a developer to form a pattern; a method for manufacturing an electronic device, comprising the pattern forming method; and an electronic device manufactured by the manufacturing method of an electronic device. | 05-14-2015 |
20150140484 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, USING THE SAME, PATTERN FORMING METHOD, MANUFACTURING METHOD OF ELECTRONIC DEVICE, AND ELECTRONIC DEVICE - There is provided an actinic ray-sensitive or radiation-sensitive resin composition comprising: (A) a resin containing a repeating unit represented by the first specific formula and a repeating unit represented by the second specific formula, wherein the content of the repeating unit represented by the first specific formula is 35 mol % or more based on all repeating units in the resin (A), a resist film formed using the actinic ray-sensitive or radiation-sensitive resin composition. | 05-21-2015 |
20150147688 | PATTERN FORMING METHOD, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, MANUFACTURING METHOD OF ELECTRONIC DEVICE USING THE SAME, AND ELECTRONIC DEVICE - There is provided a pattern forming method comprising (1) a step of forming a film by using an actinic ray-sensitive or radiation-sensitive resin composition containing (P) a resin having a repeating unit represented by the specific formula, (2) a step of exposing the film by using an actinic ray or radiation, and (3) a step of developing the exposed film by using an organic solvent-containing developer to form a negative pattern, wherein the content of the repeating unit represented by the specific formula is 25 mol % or more based on all repeating units in the resin (P). | 05-28-2015 |
20150185610 | PATTERN FORMING METHOD, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, MANUFACTURING METHOD OF ELECTRONIC DEVICE USING THE SAME, AND ELECTRONIC DEVICE - There is provided a pattern forming method comprising, in order, (1) a step of forming a film by using an actinic ray-sensitive or radiation-sensitive resin composition containing (Ab) a resin having specific repeating units, (2) a step of exposing the film by using an electron beam or an extreme-ultraviolet ray, and (3) a step of developing the exposed film by using an organic solvent-containing developer to form a negative pattern. | 07-02-2015 |
20150284492 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE COMPOSITION, RESIST FILM USING THE SAME, PATTERN FORMING METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE - There is provided an actinic ray-sensitive or radiation-sensitive resin composition containing a resin (P) having a repeating unit represented by the following Formula (A) and having at least two of a repeating unit represented by the following Formula (B), a repeating unit represented by the following Formula (C), a repeating unit represented by the following Formula (D) and a repeating unit represented by the following Formula (E). | 10-08-2015 |
20150293446 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE COMPOSITION, RESIST FILM USING THE SAME, PATTERN FORMING METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE - There is provided an actinic ray-sensitive or radiation-sensitive resin composition containing a resin (P) having a repeating unit represented by the following Formula (A) and having at least two of a repeating unit represented by the following Formula (B), a repeating unit represented by the following Formula (C), a repeating unit represented by the following Formula (D) and a repeating unit represented by the following Formula (E). | 10-15-2015 |
20160024005 | COMPOUND, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, AND PATTERN FORMATION METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE USING SAME, AND ELECTRONIC DEVICE - There is provided an actinic ray-sensitive or radiation-sensitive resin composition containing a compound represented by the following formula (1) or (2), and the formula (1) and (2) are defined as herein, | 01-28-2016 |
Patent application number | Description | Published |
20120099181 | ELECTROPHORETIC DISPLAY DEVICE, METHOD OF MANUFACTURING THE SAME, AND ELECTRONIC APPARATUS - An electrophoretic display device includes: a substrate; partition walls which partition a space on the substrate into a plurality of cells; an electrophoretic dispersion liquid with which the plurality of cells on the substrate is filled; a sealing film which is disposed so as to face the substrate with the partition walls interposed therebetween and seals the plurality of cells; and phase separation portions which are partially formed between upper surfaces of the partition walls and the sealing film and in which the electrophoretic dispersion liquid is subjected to phase separation. | 04-26-2012 |
20130265632 | ELECTROPHORETIC PARTICLE, MANUFACTURING METHOD OF ELECTROPHORETIC PARTICLE, ELECTROPHORETIC DISPERSED LIQUID, ELECTROPHORETIC SHEET, ELECTROPHORETIC APPARATUS, AND ELECTRONIC EQUIPMENT - An electrophoretic particle of the invention include: a mother particle; and a covering layer, wherein the covering layer includes a plurality of polymers, each of which includes a polymerization initiator which includes a polymerization initiation group linked to a surface of the mother particle and polymerization parts in which monomers are polymerized from the polymerization initiation group as a starting point, wherein each of the polymer include the polymerization initiator, a first polymerization part, which is coupled to the polymerization initiator, in which first monomers that includes monomers with cross-linking groups are polymerized, and a second polymerization part in which second monomers that does not include monomers with cross-linking groups are polymerized, and the polymers are linked to each other at the cross-linking groups of the first polymerization parts via cross-linking agent. | 10-10-2013 |
20130265633 | ELECTROPHORESIS PARTICLE, METHOD OF MANUFACTURING ELECTROPHORESIS PARTICLE, ELECTROPHORESIS DISPERSION LIQUID, ELECTROPHORESIS SHEET, ELECTROPHORESIS DEVICE AND ELECTRONIC APPARATUS - An electrophoresis particle of the embodiment includes a mother particle and a covering layer which covers at least a part of the mother particle, wherein the covering layer includes a shell which is consisted of an organic polymer and which cellulary engulfs the mother particle and a polymer which is bonded on the surface of the shell and the polymer is one that a monomer has been polymerized using living radical polymerization, setting the polymerization initiating group as the starting point. | 10-10-2013 |
20140355104 | ELECTROPHORETIC PARTICLES, METHOD FOR MANUFACTURING ELECTROPHORETIC PARTICLES, ELECTROPHORESIS DISPERSION, DISPLAY DEVICE, AND ELECTRONIC APPARATUS - There is provided electrophoretic particle which has core particle, and a siloxane-based compound which includes a connecting structure in which a plurality of siloxane bonds are connected in series, and the surface of the core particle includes a first region to which the siloxane-based compound is bonded, and a second region in which charging characteristic derived from the core particle is expressed by exposure of the surface of the core particle. An occupancy rate of the first region on the surface of the core particle is preferably equal to greater than 0.05% and equal to or less than 20%. | 12-04-2014 |
20140376080 | ELECTROPHORETIC PARTICLES, ELECTROPHORETIC DISPERSION LIQUID, DISPLAY SHEET, DISPLAY DEVICE, AND ELECTRONIC EQUIPMENT - Electrophoretic particle include a core particle (mother particle); a siloxane-based compound that is bonded to a surface of the core particle and contains a connection structure in which a plurality of siloxane bonds are serially connected to each other; and a charging group that is an organic group bonded to the surface of the core particle, contains a main skeleton, and has a positive or negative electric charge. It is preferable that the occupancy rate of an area to which the siloxane-based compound is bonded on the surface of the core particle be in the range of 0.05% to 20%. | 12-25-2014 |
20140376081 | ELECTROPHORETIC PARTICLES, ELECTROPHORETIC DISPERSION LIQUID, DISPLAY SHEET, DISPLAY DEVICE, AND ELECTRONIC EQUIPMENT - Electrophoretic particle include a core particle; a siloxane-based compound that is bonded to a surface of the core particle and contains a connection structure in which a plurality of siloxane bonds are serially connected to each other; and a polarizing group that is an organic group bonded to the surface of the core particle, contains a main skeleton and a substituent bonded to the main skeleton, and has unevenly distributed electrons on the particle side of the main skeleton or the opposing side thereof. | 12-25-2014 |
20150205180 | METHOD OF MANUFACTURING ELECTROPHORESIS DISPERSION LIQUID, ELECTROPHORESIS DISPERSION LIQUID, DISPLAY DEVICE AND ELECTRONIC APPARATUS - A method of manufacturing a dispersion medium includes bonding a siloxane compound to the surface of core particles by a precursor of the siloxane compound and the surface of the core particles being reacted in the dispersion medium, and removing the precursor not bonded to the core particles. | 07-23-2015 |
20150232701 | METHOD OF MANUFACTURING ELECTROPHORESIS PARTICLES, ELECTROPHORESIS PARTICLES, ELECTROPHORESIS DISPERSION LIQUID, ELECTROPHORESIS SHEET, ELECTROPHORESIS DEVICE, AND ELECTRONIC APPARATUS - A method of manufacturing electrophoresis particles having base particles exposing first functional groups on surfaces and block copolymers bonded to the base particles, the method including: obtaining the plurality of block copolymers in which dispersion portions formed by polymerizing monomers including side chains contributing to dispersibility in a dispersion medium and bonding portions formed by polymerizing second monomers including second functional groups having reactivity with the first functional group are bonded, by living polymerization; and bonding the bonding portions to the base particles by reacting the first functional groups and the second functional groups so that the block copolymers are bonded to the base particles. | 08-20-2015 |
20150277206 | METHOD FOR PREPARING ELECTROPHORETIC PARTICLE, ELECTROPHORETIC PARTICLE, ELECTROPHORETIC DISPERSION, ELECTROPHORETIC SHEET, ELECTROPHORETIC APPARATUS, AND ELECTRONIC APPLIANCE - Provided is a method for preparing an electrophoretic particle including a particle and a coating layer covering at least a part of the particle, including obtaining the plurality of block copolymers having dispersion portions and crosslinking/adsorbing portions having crosslinking groups and being linked to the dispersion portions; adsorbing the crosslinking/adsorbing portion onto the surface of the particle; and crosslinking the crosslinking groups by a crosslinking agent to link the plurality of block copolymers, thereby forming the coating layer. The dispersion portions are formed by the living polymerization of first monomers having functional groups contributing the dispersibility of the particles into a dispersion medium, and the crosslinking/adsorbing portions are formed by the living polymerization of at least one kind of monomers, and thus provided with adsorbability onto the surface of the particles. | 10-01-2015 |
20150323850 | METHOD FOR PREPARING ELECTROPHORETIC PARTICLES, ELECTROPHORETIC PARTICLES, ELECTROPHORETIC DISPERSION, ELECTROPHORETIC SHEET, ELECTROPHORETIC APPARATUS, AND ELECTRONIC DEVICE - A method for preparing electrophoretic particles includes mixing a first compound (a compound provided with a functional group having reactivity with a hydroxyl group) or a second compound (a compound provided with a functional group having reactivity with a hydroxyl group and a polymer), and a plurality of particles to obtain a mixture, and linking the first compound or the second compound to the surface of the particles. When obtaining the mixture, the content of the first compound or the second compound in the mixture is 75% by weight or more. | 11-12-2015 |
Patent application number | Description | Published |
20080240926 | Cobalt-Free Ni-Base Superalloy - There is provided a Co-free Ni-base superalloy having a composition containing 1.0 to 10.0 wt % of Cr, 0.1 to 3.5 wt % of Mo, 7.5 to 10.0 wt % of W, 4.0 to 8.0 wt % of Al, 12.0 wt % or less of at least one species of Ta, Nb and Ti, 0 to 2.0 wt % of Hf, 0.1 to 5.0 wt % of Re and the remainder comprised of Ni and unavoidable impurities. The Co-free Ni-base superalloy exhibits high composition stability over a long period of time and is excellent in creep properties at high temperature, and also suitable as a turbine blade or turbine vane of atomic power generation in which maintenance for radioactive contamination and so forth are easy. | 10-02-2008 |
20090317288 | Ni-Base Superalloy and Method for Producing the Same - A Ni-base superalloy having a chemical composition comprising Al: 4.5-7.0 wt %, Ta+Nb+Ti: 0.1-4.0 wt %, with Ta being less than 4.0 wt %, Mo: 1.0-8.0 wt %, W: 0.0-10.0 wt %, Re: 2.0-8.0 wt %, Hf: 0.0-1.0 wt %, Cr: 2.0-10.0 wt %, Co: 0.0-15.0 wt %, Ru: 0.0-5.0 wt %, and the balance being Ni and unavoidable impurities, and a method for producing the same are disclosed. The Ni-base superalloy has excellent creep property at high temperature and is suitable for use as a member at high temperature under high stress. | 12-24-2009 |
20100226779 | Ni-Base Superalloy, Method for Producing the Same, and Turbine Blade or Turbine Vane Components - A Ni-base superalloy having a chemical composition comprising Cr: 3.0-5.0 wt %, Co: 5.0-10.0 wt %, Mo: 0.5-3.0 wt %, W: 8.0-10.0 wt %, Ta: 5.0-8.0 wt %, Nb: 3.0 wt % or less, Al: 4.5-6.0 wt %, Ti: 0.1-2.0 wt %, Re: more than 3.0-4.0 wt %, Ru: 0.2-4.0 wt %, Hf: 0.01-0.2 wt %, and the balance being Ni and unavoidable impurities, a method for producing the same, and turbine blade or turbine vane components are disclosed. The Ni-base superalloy has high creep strength and textural stability under high temperature environment, and is excellent in applicability to turbine blade or turbine vane components of large-sized gas turbines. | 09-09-2010 |
20110171057 | NI-BASED SINGLE CRYSTAL SUPER ALLOY - The object of the present invention is to provide an Ni-based single crystal super alloy capable of improving strength by preventing precipitation of a TCP phase at high temperatures. This object is achieved by an Ni-based single crystal super alloy having a composition comprising 5.0-7.0 wt % of Al, 4.0-10.0 wt % of Ta, 1.1-4.5 wt % of Mo, 4.0-10.0 wt % of W, 3.1-8.0 wt % of Re, 0-0.50 wt % of Hf, 2.0-5.0 wt % of Cr, 0-9.9 wt % of Co and 4.1-14.0 wt % of Ru in terms of its weight ratio, with the remainder consisting of Ni and unavoidable impurities. Furthermore, in this Ni-based single crystal super alloy, when lattice constant of matrix is taken to be a1 and lattice constant of precipitation phase is taken to be a2, a2≦0.999a1. | 07-14-2011 |
Patent application number | Description | Published |
20100143182 | Ni-BASED SINGLE CRYSTAL SUPERALLOY - A Ni-based single crystal superalloy according to the invention has, for example, a composition including: 5.0 to 7.0 wt % of Al, 4.0 to 10.0 wt % of Ta, 1.1 to 4.5 wt % of Mo, 4.0 to 10.0 wt % of W, 3.1 to 8.0 wt % of Re, 0.0 to 2.0 wt % of Hf, 2.5 to 8.5 wt % of Cr, 0.0 to 9.9 wt % of Co, 0.0 to 4.0 wt % of Nb, and 1.0 to 14.0 wt % of Ru in terms of weight ratio; and the remainder including Ni and incidental impurities. In addition, the contents of Cr, Hf and Al are preferably set so as to satisfy the equation OP≧108. According to the Ni-based single crystal superalloy of the invention, high creep strength can be maintained and the oxidation resistance can be improved. | 06-10-2010 |
20110142714 | Ni-BASED SINGLE CRYSTAL SUPERALLOY AND COMPONENT OBTAINED FROM THE SAME - Provided is an Ni-based single crystal superalloy wherein the ingredients have a composition containing, as ratio by mass, from 5.0% by mass to 7.0% by mass of Al, from 4.0% by mass to 8.0% by mass of Ta, from 0% by mass to 2.0% by mass of Mo, from 3.0% by mass to 8.0% by mass of W, from 3.0% by mass to 8.0% by mass of Re, from 0% by mass to 0.50% by mass of Hf, from 3.0% by mass to 7.0% by mass of Cr, from 0% by mass to 9.9% by mass of Co and from 1.0% by mass to 10.0% by mass of Ru, with the balance of Ni and inevitable impurities. The alloy prevents TCP phase precipitation at high temperatures, therefore having improved strength at high temperatures and having oxidation resistance at high temperatures. | 06-16-2011 |
20110262299 | Ni-BASED SINGLE CRYSTAL SUPERALLOY AND COMPONENT USING THE SAME AS SUBSTRATE - Provided is an Ni-based single crystal superalloy wherein the ingredients have a composition containing, as ratio by mass, from 5.0% by mass to 7.0% by mass of Al, from 4.0% by mass to 8.0% by mass of Ta, from 0% by mass to 2.0% by mass of Mo, from 3.0% by mass to 8.0% by mass of W, from 3.0% by mass to 8.0% by mass of Re, from 0% by mass to 0.50% by mass of Hf, from 3.0% by mass to 6.0% by mass of Cr, from 0% by mass to 9.9% by mass of Co, from 1.0% by mass to 14.0% by mass of Ru, and from 0.1% by mass to 4.0% by mass of Nb, with the balance of Ni and inevitable impurities. The alloy prevents TCP phase precipitation at high temperatures, therefore having improved strength at high temperatures and having oxidation resistance at high temperatures. | 10-27-2011 |
20120014832 | Ni-BASED SINGLE CRYSTAL SUPERALLOY - The Ni-based single crystal alloy disclosed here is a single crystal and has a chemical composition containing, as % by mass,
| 01-19-2012 |
20130167687 | NICKEL ALLOY - There is provided a nickel alloy having an excellent creep strength as well as high-temperature oxidation resistance. The nickel alloy of the present invention comprises, by mass percent, Cr in a range of 11.5 to 11.9%, Co in a range of 25 to 29%, Mo in a range of 3.4 to 3.7%, W in a range of 1.9 to 2.1%, Ti in a range of 3.9 to 4.4%, Al in a range of 2.9 to 3.2%, C in a range of 0.02 to 0.03%, B in a range of 0.01 to 0.03%, Zr in a range of 0.04 to 0.06%, Ta in a range of 2.1 to 2.2%, Hf in a range of 0.3 to 0.4%, and Nb in a range of 0.5 to 0.8%, the balance being Ni and unavoidable impurities, and contains carbides and borides precipitating in crystal grains and at grain boundaries. | 07-04-2013 |
20130316891 | OXIDE MATRIX COMPOSITE MATERIAL - The oxide matrix composite material is obtained by subjecting a fiber composed of at least one oxide or complex oxide and a matrix composed of at least one oxide or complex oxide to composite formation. For the fiber and the matrix, a component composition is selected such that the fiber and the matrix keep thermodynamic equilibrium to each other in a temperature range not exceeding the melting temperature, and a fiber diameter of the fiber at the time of equilibrium keeps ½ or more of a fiber diameter of the fiber at the start of the composite formation. | 11-28-2013 |
20140373979 | NICKEL-BASED HEAT-RESISTANT SUPERALLOY - Disclosed herein is a nickel-based heat-resistant superalloy produced by a casting and forging method, the nickel-based heat-resistant superalloy comprising 2.0 mass % or more but 25 mass % or less of chromium, 0.2 mass % or more but 7.0 mass % or less of aluminum, 19.5 mass % or more but 55.0 mass % or less of cobalt, [0.17×(mass % of cobalt content−23)+3] mass % or more but [0.17×(mass % of cobalt content−20)+7] mass % or less and 5.1 mass % or more of titanium, and the balance being nickel and inevitable impurities, and being subjected to solution heat treatment at 93% or more but less than 100% of a γ′ solvus temperature. | 12-25-2014 |
20150197833 | Ni-BASED SINGLE CRYSTAL SUPERALLOY - Provided is a Ni-based single crystal superalloy containing
| 07-16-2015 |
Patent application number | Description | Published |
20100210413 | SHIFT CONTROLLER AND SHIFT CONTROL METHOD FOR AUTOMATIC TRANSMISSION MECHANISM - A shift controller for an automatic transmission mechanism is configured such that when the engine is in a driven state in which the engine is driven by a travel inertia force or the like and an accumulated pressure amount of the accumulator is equal to or less than a predetermined threshold, the excessive engine brake force, which is generated due to the accumulation of at least a portion of the hydraulic pressure generated from the mechanical hydraulic pump in the accumulator, is inhibited or reduced by conducting upshifting that relatively decreases the gear ratio of the automatic transmission mechanism. Therefore, the generation of the excessive engine brake force can be inhibited or reduced even when the engine is in the driven state and pressure accumulation is performed. | 08-19-2010 |
20110269583 | HYDRAULIC CONTROL APPARATUS AND HYDRAULIC CONTROL METHOD - If it is determined that a malfunction has occurred in an electrical hydraulic pump and the hydraulic fluid is not supplied to a high hydraulic pressure supplied portion from the electrical hydraulic pump, the hydraulic fluid is supplied to the high hydraulic pressure supplied portion from a mechanical hydraulic pump that usually supplies the hydraulic fluid to a low hydraulic pressure supplied portion. In this case, the hydraulic pressure that is generated by the mechanical hydraulic pump is increased by increasing the output from the engine that drives the mechanical hydraulic pump. | 11-03-2011 |
20140172257 | VEHICLE CONTROL DEVICE - A vehicle control device includes an engine and a clutch configured to connect and disconnect a power transmission path between the engine and a drive wheel according to a supplied hydraulic pressure. The vehicle control device is configured to carry out neutral control that controls the hydraulic pressure supplied to the clutch to an N control study value for placing the clutch in a semi-engaged state while a vehicle stops and inertia control (free-run control, deceleration eco-run control, and N inertia control) that carries out an inertia travelling by releasing the clutch while the vehicle travels. At the time that the inertia control is executed, the vehicle control device controls the hydraulic pressure supplied to the clutch to the same value as the N control study value. | 06-19-2014 |
20140200781 | VEHICLE CONTROL SYSTEM - A vehicle control system includes an internal combustion engine capable of switching an operating state and a non-operating state while a vehicle travels, an engaging device capable of switching an engaged state in which the internal combustion engine is engaged with a driving wheel so that a power can be transmitted therebetween and a release state in which the engagement is released, and a controller configured to control the internal combustion engine and the engaging device based on a vehicle speed parameter as to a traveling speed of the vehicle and a determination parameter different from the vehicle speed parameter, place the engaging device in a release state at the time stop permission conditions of the internal combustion engine as to the determination parameter have been established while the vehicle travels at deceleration. | 07-17-2014 |
Patent application number | Description | Published |
20100052493 | RARE GAS DISCHARGE LAMP APPARATUS - A rare gas discharge lamp apparatus has two or more rare gas discharge lamps aligned in parallel, each of which has a glass bulb that contains rare gas therein and first and second external electrodes that are formed on an outer surface of the glass bulb, extends in a glass bulb length direction, and are arranged apart from each other. The first and second external electrodes are made from metallic foils, and project in an outer length direction of the glass bulb from the respective glass bulbs to form extended portions. In addition, the first external electrode of one of the two or more rare gas discharge lamps and that of another one of the two or more rare gas discharge lamps are joined by a pressure bonding member at the extended portions of the respective first external electrodes. | 03-04-2010 |
20110149590 | Linear light source - A linear light source, in which an LED is arranged at an end portion of an approximately cylindrical light guiding member configured so that an upper portion, which has an approximately circular portion and which includes a light emitting face, a flat lower portion, which includes a light reflection face formed so as to face the upper portion, and side portions which connect the upper portion and the lower portion to each other, are arranged to extend in a longitudinal direction, respectively, and a light diffusion and reflection member provided outside of the light guiding member. | 06-23-2011 |
20110164412 | LED linear light source and reading apparatus - An LED linear light source includes an approximately rod-shaped light guiding member, at an end portion of which an LED is provided. The light guiding member is in an approximately arc shape in a cross sectional view taken perpendicular to an optical axis. The light guiding member has an upper face including a light emission face for emitting light and a lower face including a reflective face, which are arranged in parallel. A diffusing member diffuses light provided on part of an outer circumferential face adjacent to a light entering end face of the light guiding member. A light absorption member is provided in an outside of the light guiding member near at an end portion thereof. | 07-07-2011 |
20150260368 | LIGHT EMITTING MODULE AND LIGHT IRRADIATING APPARATUS - A light emitting module includes: a substrate; at least one light emitting element line including a plurality of light emitting elements that are arrayed on the substrate in a first direction; and at least one sealing lens sealing the at least one light emitting element line, and including a plurality of lens sections. The lens sections each include a spherical light emission surface having a convex shape, and are provided corresponding to the respective light emitting elements and continuous in the first direction. The lens sections each satisfy predetermined expressions (1) and (2). | 09-17-2015 |
Patent application number | Description | Published |
20140125634 | INFORMATION PROCESSING APPARATUS, INFORMATION PROCESSING SYSTEM, INFORMATION PROCESSING METHOD, PROGRAM AND INFORMATION RECORDING MEDIUM - Disclosed herein is an information processing apparatus, including: an image acceptance section configured to accept an image of an operation inputting apparatus picked up by an imaging section; an operation signal acceptance section configured to accept an operation signal representative of an operation for the operation inputting apparatus from the operation inputting apparatus; and a process execution section configured to execute a process in response to the position of the operation inputting apparatus in the image accepted by the image acceptance section and the operation signal accepted by the operation signal acceptance section. | 05-08-2014 |
20140362188 | IMAGE PROCESSING DEVICE, IMAGE PROCESSING SYSTEM, AND IMAGE PROCESSING METHOD - An image processing device includes an image acquirer that acquires data of a shot image obtained by a camera, a depth image acquirer that acquires a depth image obtained by representing a distance of a subject from the camera in the depth direction as a pixel value, and a first object detector that detects a region of an image of a first object from the shot image or the depth image. The image processing device further includes a second object detector that detects a region of an image of a second object based on the region of the image of the first object and the pixel value in the depth image, a clipping region decider that decides a clipping region including at least the regions of the images of the first and second objects, and a display image generator that generates a display image by using the clipping region. | 12-11-2014 |
20150278583 | INFORMATION PROCESSOR - Provided is an information processor which readily permits operation input to be made so as to point a position on a screen when an operation input is received from a user using a captured image obtained by imaging the user. The information processor acquires a captured image including a user's face, identifies the position of the user's face included in the acquired captured image, sets an operation area at a position on the captured image determined in accordance with the identified face position, detects a detection target within the operation area, and receives, as a user-pointed position, a position on the screen corresponding to a relative position of the detected detection target within the operation area. | 10-01-2015 |