Patent application number | Description | Published |
20090098658 | Microchip and Method of Using the Same - A microchip includes fluid circuits therein, formed by uniting together at least a first substrate that is a transparent substrate and a second substrate having grooves provided at the substrate surface and/or through holes penetrating in a thickness direction. The fluid circuits include a liquid reagent receptacle unit to store a liquid reagent, a quantification unit to quantify the liquid reagent or specimen, and an overflow liquid storage unit connected to the quantification unit to store the liquid reagent or specimen overflowing from the quantification unit during quantification. There is also provided a method of using the microchip. | 04-16-2009 |
20090111675 | Microchip and Method of Using the Same - A microchip including a first substrate with a groove formed on a substrate surface or a pass-through hole passing in a thickness direction of the substrate, and one or more second substrates laminated on a surface of the first substrate; the microchip including an optical measurement cuvette consisting of a space configured by the groove or the pass-through hole, and a substrate surface of the second substrate; wherein a side wall surface of the second substrate is positioned on an inner side than a side wall surface of the first substrate in at least one part of a side wall surface of the microchip, and a method of using the same are provided. | 04-30-2009 |
20090232708 | Microchip - A microchip is provided, in which dead space provided only for holding excess fluid is made smaller. The microchip is formed by joining at least a first substrate with a trench formed on the substrate surface and a second substrate, and it has a fluid circuit formed by the trench and a surface of the second substrate facing the first substrate. The first substrate and/or the second substrate has a projection for moving fluid and/or air in a direction opposite to the direction of gravity during an operation of the microchip, and the projection is provided near an end portion of a through hole and/or an air vent. | 09-17-2009 |
20100158757 | CHIP USING METHOD AND TEST CHIP - A measuring chip is configured for separating and measuring a target component in a sample by rotation around first and second axes of rotation. The measuring chip includes a centrifugal separation tube that centrifugally separates the target component from the sample by rotating the measuring chip around the first axis of rotation; a first holding section installed in the bottom of the centrifugal separation tube, wherein non-target components other than the target component in the sample are introduced therein by rotation around the first axis of rotation, and the first holding section holds the non-target components during rotation around the second axis of rotation; and a measuring section connected to one end of the centrifugal separation tube that measures the non-target components introduced from the centrifugal separation tube by rotation around the second axis of rotation. | 06-24-2010 |
20130115148 | Microchip and Method of Using the Same - A microchip including a first substrate with a groove formed on a substrate surface or a pass-through hole passing in a thickness direction of the substrate, and one or more second substrates laminated on a surface of the first substrate; the microchip including an optical measurement cuvette consisting of a space configured by the groove or the pass-through hole, and a substrate surface of the second substrate; wherein a side wall surface of the second substrate is positioned on an inner side than a side wall surface of the first substrate in at least one part of a side wall surface of the microchip, and a method of using the same are provided. | 05-09-2013 |
20130195719 | Microchip and Method of Using the Same - A microchip includes fluid circuits therein, formed by uniting together at least a first substrate that is a transparent substrate and a second substrate having grooves provided at the substrate surface and/or through holes penetrating in a thickness direction. The fluid circuits include a liquid reagent receptacle unit to store a liquid reagent, a quantification unit to quantify the liquid reagent or specimen, and an overflow liquid storage unit connected to the quantification unit to store the liquid reagent or specimen overflowing from the quantification unit during quantification. There is also provided a method of using the microchip. | 08-01-2013 |
Patent application number | Description | Published |
20100271572 | LIQUID CRYSTAL DISPLAY DEVICE AND METHOD FOR MANUFACTURING THE SAME - A liquid crystal display device includes a polarizer plate attached to at least one of outer surfaces opposed to the inner surfaces of a counter substrate and an array substrate. A liquid crystal layer is interposed between the inner surfaces. Active areas are formed on the respective array substrate and the counter substrate to form a plurality of pixels in a matrix by a shield element. The shield element is formed to surround the active area on the counter substrate and extending to a corner portion of the counter substrate. A polarizer plate fiducial mark including a first mark formed on the counter substrate by the same material as the shield layer and a second mark formed of an aperture made in the shield layer is formed to check alignment error of the attached polarizer plate. | 10-28-2010 |
20110187951 | LIQUID CRYSTAL DISPLAY DEVICE - In one embodiment, a liquid crystal display device includes a first insulating substrate and a second insulating substrate opposing the first insulating substrate. An electric power supply line formed along a perimeter of the first insulating substrate, and an electric power supply pad is arranged at a corner portion of the first insulating substrate apart from the electric power supply line. A plurality of signal lines are formed crossing between the electric power supply line and the electric power supply pad. An insulating layer covers the signal lines, and a connection electrode is arranged on the insulating layer for connecting the electric power supply line and the electric power supply pad. At least one slit is formed in the connection electrode extending in a direction so as to cross the signal lines. An electrically conductive element connects the electric power supply pad with a counter electrode. | 08-04-2011 |
20140111756 | LIQUID CRYSTAL DISPLAY DEVICE - An array substrate includes a circumference wiring along with a periphery of an active area. A seal element is arranged surrounding the active area and forming a liquid crystal injecting mouth, and a seal material seals the liquid crystal injecting mouth. The circumference wiring is located in the liquid crystal injecting mouth and extends in a first direction. The circumference wiring includes a first wiring portion formed of a plurality of straight line portions, a second wiring portion in the shape of a grid formed of a plurality of straight line portions and a third wiring portion formed of a plurality of straight line portions. The respective straight line portions of the first, second and third wiring portions are connected along the first direction in the liquid crystal injecting mouth. | 04-24-2014 |
Patent application number | Description | Published |
20090040457 | PLASTIC LENS AND MANUFACTURING METHOD OF PLASTIC LENS - A plastic lens includes: a plastic lens base material; a hard coat layer formed on the plastic lens base material; an organic antireflection film formed on the hard coat layer; and a primer layer between the plastic lens base material and the hard coat layer. The plastic lens base material contains at least a sulfur atom. The hard coat layer contains at least: fine metal oxide particles containing a titanium oxide having a rutile-type crystalline structure; and an organosilicon compound represented by a general formula of R | 02-12-2009 |
20090043025 | COATING MATERIAL COMPOSITE AND COATED ARTICLE - It is aimed at providing a coating material composite capable of having a lower refractive index and keeping higher antiscratching property, antifouling property, chemical resistance, and anticrack property even when the coating material composite is used to form a coating on a malleable substrate such as plastic substrates and exposed to high temperatures upon formation of the coating and after formation of the coating. | 02-12-2009 |
20130122279 | TRANSPARENT CONDUCTIVE FILM, SUBSTRATE WITH TRANSPARENT CONDUCTIVE FILM, AND ORGANIC ELECTROLUMINESCENCE ELEMENT USING THE SAME - A transparent conductive film includes a first transparent resin layer including a plurality of thin metallic wires, a second transparent resin layer containing a conductive polymer, and a third transparent resin layer provided between the first transparent resin layer and the second transparent resin layer. The second transparent resin layer contains a resin which is soluble in water, and the third transparent resin layer contains a resin which is insoluble in water or has water resistance. The third transparent resin layer can suppress mixing of the second transparent resin layer with the first transparent resin layer and can make the second transparent resin layer less likely to be damaged by the first transparent resin layer. Therefore, a surface of the second transparent resin layer is made smooth and electrical conductivity is made uniform. | 05-16-2013 |
Patent application number | Description | Published |
20090065145 | Plasma Processing Apparatus And Method Capable Of Adjusting Temperature Within Sample Table - A plasma processing apparatus includes a processing chamber disposed within a vacuum vessel for forming therein a plasma, a sample table disposed beneath the processing chamber for mounting on its upper surface a workpiece to be processed, an electrode disposed within the sample table for allowing application of high frequency power for adjustment of a surface potential of the workpiece, a passage disposed within the sample table for causing a refrigerant to flow therein, and a control device for adjusting a temperature of the refrigerant flowing in the passage. The workpiece is processed using a plasma created within the processing chamber under application of the high frequency power. Before application of the high frequency power, the control device starts to adjust the temperature of the refrigerant based on information of the high frequency power so that it has a predetermined value. | 03-12-2009 |
20090078563 | Plasma Processing Apparatus And Method Capable of Adjusting Temperature Within Sample Table - A plasma processing method includes mounting a workpiece to be processed on an upper surface of a sample table disposed at a lower portion of an interior of a processing chamber disposed within a vacuum vessel and processing the workpiece by use of plasma formed within the processing chamber while applying thereto a first high frequency power for adjustment of a surface potential of the workpiece which is disposed on the sample table. The method further includes starting, prior to application of the first high frequency power, to adjust a temperature of a heat exchange medium flowing in a passage disposed inside of the sample table so as to have a predetermined value based on information of this high frequency power. | 03-26-2009 |
20140102640 | PLASMA PROCESSING APPARATUS - A plasma processing apparatus having a stable plasma generation under wide-ranging process conditions, and superior in uniformity and reproducibility, comprises an upper electrode | 04-17-2014 |
20140202995 | PLASMA HEAT TREATMENT APPARATUS - A plasma heat treatment apparatus, provided for enabling a control of temperature distribution within electrode surfaces, without accompanying an increase of an electric power to be inputted therein, even in case when heating is made on a sample to be heated, having a large diameter thereof, with applying plasma, comprises a treatment chamber | 07-24-2014 |
20140305915 | HEAT TREATMENT APPARATUS - A heat treatment apparatus, for enabling stable plasma discharge, with preventing desorption of silicon from silicon carbonite suppressing an amount of discharge of thermions therefrom, comprises a treatment chamber for heating a heating sample therein, a plate-shaped upper electrode, being disposed in the treatment chamber, a plate-shaped lower electrode, facing to the upper electrode and for producing plasma between the upper electrode, and a gas supplying means for supplying a gas into the treatment chamber, wherein the upper electrode and the lower electrode are made of a base material of silicon carbonite, and each being covered by a carbon film around thereof. | 10-16-2014 |
20150156856 | HEAT TREATMENT APPARATUS - A heat treatment apparatus includes a heat treatment chamber to conduct heat treatment of a heated sample, a planar first electrode disposed in the heat treatment chamber, a planar second electrode to create plasma in a space between the first and second electrodes and to heat the heated sample, a radio-frequency power source to supply the first electrode with radio-frequency power to create the plasma, and a sample stage opposing the first electrode with the second electrode placed between the first electrode and the sample stage, to mount thereon the heated sample, wherein the first electrode is lower in thermal emissivity than the second electrode. | 06-04-2015 |
20150243486 | PLASMA PROCESSING APPARATUS - In a plasma processing apparatus including an upper electrode arranged above a sample stage on which a sample to be processed in a processing chamber is mounted to supply an electric field, and a high frequency power supply to output first high frequency power to form the electric field to the upper electrode, an insulating layer has an impedance smaller than the impedance of the feeding path for bias or the feeding path for electrostatic chuck and a current of the first high frequency power flows through a circuit that passes through the conductive plate and a member constituting an inner sidewall surface of the processing chamber from the upper electrode via the top surface of the sample stage to return to the high frequency power supply. | 08-27-2015 |
Patent application number | Description | Published |
20090184421 | SEMICONDUCTOR DEVICE WITH HIGH RELIABILITY AND MANUFACTURING METHOD THEREOF - A semiconductor device is provided, which includes a substrate, an insulator film formed over the substrate, and plural metal wirings with different widths containing copper as a main component and an impurity which is different from copper. The plural metal wirings includes a first metal wiring having a concentration profile where the concentration of the impurity metal increases from the center part of the stacking direction to the surface and the second metal wiring having a concentration profile where the concentration of the impurity metal decreases from the bottom surface of the stacking direction to the surface. Moreover, the width of the second metal wiring may be larger than the width of the first metal wiring. | 07-23-2009 |
20090265155 | Method of predicting reliability of semiconductor device, reliability prediction system using the same and storage medium storing program causing computer to execute the same - An initial reliability of a semiconductor device is predicted before the design layout of a semiconductor product. A method of predicting the reliability of a semiconductor device according to the present invention: calculates the defect density of a plurality of wiring patterns on a wafer; extracts the critical area of a series of library elements formed of wiring patterns based on the defect density to determine the critical area value of each library element; determines a failure probability by wiring pattern from the result of a reliability test of the wiring pattern to form a correlation model from an expected value in which a defect is generated and which is obtained from the defect density and the failure probability of each wiring pattern; calculates the failure probability of each library element from the critical area value and the function of the correlation model; designs a layout of a semiconductor product with two library elements or more out of a series of the library elements combined together and calculates the reliability of the designed semiconductor device in consideration of the failure probability of the library elements combined together. | 10-22-2009 |
20100095258 | Wiring layout method of integrated circuit and computer-readable medium storing a program executed by a computer to execute the same - A wiring layout method includes designing a layout of a power wiring for an integrated circuit; designing a layout of plural signal wirings for the integrated circuit; comparing the signal frequency; classifying the signal wirings; calculating an evaluation value of a temperature rise; and modifying the layouts of the integrated circuit. | 04-15-2010 |
20120025403 | DESIGN APPARATUS OF SEMICONDUCTOR DEVICE, DESIGN METHOD OF SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE - A design method of a semiconductor device includes four steps. The first step is of arranging grid wiring which includes a plurality of wiring lines arranged in parallel to each other and a plurality of vias connecting the plurality of wiring lines with each other. The second step is of arranging a plurality of internal circuits connected to the grid wiring. The third step is of calculating a current density of a current flowing in the grid wiring by the plurality of internal circuits. The fourth step is of dividing each of the plurality of wiring lines into portions each having a wiring length such that electromigration corresponding to the current density is suppressed. | 02-02-2012 |
20120181615 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE - A distance between a contact and a gate electrode can be measured efficiently. Conversion data indicating a correlation between the distance between the first gate electrode and the first contact and a magnitude of a leakage current amount is prepared in advance. The leakage current amount between the first gate electrode and the first contact is measured, and the measured leakage current amount is converted into the distance between the first gate electrode and the first contact by using the conversion data. Then, a superposition error between an exposure process for forming the first gate electrode and an exposure process for forming the first contact can be measured from a difference between the measured value of the distance between the first gate electrode and the first contact and a design value of the distance. | 07-19-2012 |
20120181694 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - The semiconductor device includes an interlayer insulating film, a wiring provided in the interlayer insulating film, and a SiN film provided over the interlayer insulating film and over the wiring. The peak positions of Si—N bonds of the SiN film, which are measured by FTIR, are within the range of 845 cm | 07-19-2012 |
20120231623 | METHOD OF MANUFACTURING A HIGH-RELIABILITY SEMICONDUCTOR DEVICE - A semiconductor device is provided, which includes a substrate, an insulator film formed over the substrate, and plural metal wirings with different widths containing copper as a main component and an impurity which is different from copper. The plural metal wirings includes a first metal wiring having a concentration profile where the concentration of the impurity metal increases from the center part of the stacking direction to the surface and the second metal wiring having a concentration profile where the concentration of the impurity metal decreases from the bottom surface of the stacking direction to the surface. Moreover, the width of the second metal wiring may be larger than the width of the first metal wiring. | 09-13-2012 |
20130221520 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A semiconductor chip SC includes an electrode pad PAD. A Cu pillar PIL is formed on the electrode pad PAD. In addition, an interconnect substrate INT includes a connection terminal TER. The connection terminal TER contains Cu. For example, the connection terminal TER is formed of Cu, and is formed, for example, in a land shape. However, the connection terminal TER may not be formed in a land shape. The Cu pillar PIL and the connection terminal TER are connected to each other through a solder layer SOL. The solder layer SOL contains Sn. A Ni layer NIL is formed on either the Cu pillar PIL or the connection terminal TER. The minimum value L of the thickness of the solder layer SOL is equal to or less than 20 μm. | 08-29-2013 |
Patent application number | Description | Published |
20100127156 | Two dimensional solid-state image pickup device - A two-dimensional solid-state image pickup device includes a plurality of pixel regions arranged in a two-dimensional matrix in X and Y directions. Each of the pixel regions includes at least a light-receiving element, and a light-condensing element. The light-condensing element is a sub-wavelength lens including protrusions each having a size equivalent to or smaller than a wavelength of an electromagnetic wave incident on the light-receiving element. Each of the protrusions has a rounded edge. | 05-27-2010 |
20100171854 | Solid-state imaging device - A solid-state imaging device includes: a light-receiving element making a photoelectric conversion and being disposed in each of a plurality of pixels, wherein a honeycomb structure in which a predetermined pixel is surrounded with six pixels neighboring the predetermined pixel out of the plurality of pixels or a structure in which one to three pixels out of the six neighboring pixels are omitted from the honeycomb structure is used as a basic unit. | 07-08-2010 |
20100176280 | OPTICAL ELEMENT AND SOLID-STATE IMAGING DEVICE - An optical element includes a first filter having the function to transmit a component at a lower frequency than a first cutoff frequency in incident light, a second filter having the function to transmit a component at a higher frequency than a second cutoff frequency in the incident light, and a light-receiving element for photoelectrically converting the components transmitted through the first filter and the second filter in the incident light. A metal optical filter composed of a conductor thin film is used as at least one of the first filter and the second filter. | 07-15-2010 |
20100282945 | TWO-DIMENSIONAL SOLID-STATE IMAGE CAPTURE DEVICE AND POLARIZATION-LIGHT DATA PROCESSING METHOD THEREFOR - A two-dimensional solid-state image capture device includes pixel areas arranged in a two-dimensional matrix, each pixel area being constituted by multiple sub-pixel regions, each sub-pixel region having a photoelectric conversion element. A polarization member is disposed at a light incident side of at least one of the sub-pixel regions constituting each pixel area. The polarization member has strip-shaped conductive light-shielding material layers and slit areas, provided between the strip-shaped conductive light-shielding material layers. Each sub-pixel region further has a wiring layer for controlling an operation of the photoelectric conversion element, and the polarization member and the wiring layer are made of the same material and are disposed on the same virtual plane. | 11-11-2010 |
20100295143 | TWO-DIMENSIONAL SOLID-STATE IMAGING DEVICE - A two-dimensional solid-state imaging device includes: pixel regions arranged in a two-dimensional matrix, wherein each pixel region has a plurality of subpixel regions, a metal layer with an opening of an opening size smaller than the wavelength of an incoming electromagnetic wave and a photoelectric conversion element are arranged with an insulating film interposed therebetween, at least one photoelectric conversion element is arranged in the opening provided at a portion of the metal layer in each subpixel region, a projection image of the opening is included in a light receiving region of the photoelectric conversion element, the opening is arrayed so as to cause a resonance state based on surface plasmon polariton excited by the incoming electromagnetic wave, and near-field light generated near the opening in the resonance state is converted to an electrical signal by the photoelectric conversion element. | 11-25-2010 |
20120292521 | TWO-DIMENSIONAL SOLID-STATE IMAGING DEVICE - A camera system with a two-dimensional solid-state imaging device having pixel regions arranged in a two-dimensional matrix, wherein each pixel region has a plurality of subpixel regions, a metal layer with an opening of an opening size smaller than the wavelength of an incoming electromagnetic wave and a photoelectric conversion element are arranged with an insulating film interposed therebetween, at least one photoelectric conversion element is arranged in the opening provided at a portion of the metal layer in each subpixel region, a projection image of the opening is included in a light receiving region of the photoelectric conversion element, the opening is arrayed so as to cause a resonance state based on surface plasmon polariton excited by the incoming electromagnetic wave, and near-field light generated near the opening in the resonance state is converted to an electrical signal by the photoelectric conversion element. | 11-22-2012 |
20140191113 | SYSTEM AND METHOD FOR COLOR IMAGING WITH INTEGRATED PLASMONIC COLOR FILTERS - A device for color imaging including an optical sensor having light sensitive pixels with a metal film disposed over the light sensitive pixels. The metal film has a group of nano-holes arranged over the pixels according to a periodic lattice formation and is configured to pass light of a preselected first range of wavelengths. The group of nano-holes arranged over an adjoining group of pixels is configured to pass light having ranges of wavelengths different from the first range of wavelengths. | 07-10-2014 |
20140253756 | TWO-DIMENSIONAL SOLID-STATE IMAGE CAPTURE DEVICE AND POLARIZATION-LIGHT DATA PROCESSING METHOD THEREFOR - A two-dimensional solid-state image capture device includes pixel areas arranged in a two-dimensional matrix, each pixel area being constituted by multiple sub-pixel regions, each sub-pixel region having a photoelectric conversion element. A polarization member is disposed at a light incident side of at least one of the sub-pixel regions constituting each pixel area. The polarization member has strip-shaped conductive light-shielding material layers and slit areas, provided between the strip-shaped conductive light-shielding material layers. Each sub-pixel region further has a wiring layer for controlling an operation of the photoelectric conversion element, and the polarization member and the wiring layer are made of the same material and are disposed on the same virtual plane. | 09-11-2014 |
Patent application number | Description | Published |
20120057055 | Imaging device and imaging apparatus - An imaging device includes: an imaging area in which a plurality of pixels used to acquire an image are provided; a spectrum area in which a plurality of pixels used to acquire a color spectrum are provided; and a filter that is formed above the pixels provided in the spectrum area and allows an electromagnetic wave with a desired wavelength to pass, wherein the filter is formed of a plasmon resonator that is a conductive metal structure having an unevenness structure at a predetermined pitch, and the imaging area and the spectrum area are provided on a single chip. | 03-08-2012 |
20120061553 | Imaging device and imaging apparatus - An imaging device includes: a photoelectric conversion layer in which photoelectric conversion devices that convert received light into charge are arranged in a planar fashion; and a conductor structure layer provided on an upper surface or a lower surface of the photoelectric conversion layer and formed by stacking plural conductor layers having conductor metals with concavo-concave structures at predetermined periodic intervals within a plane in parallel to light receiving surfaces of the photoelectric conversion devices. | 03-15-2012 |
20140146207 | SOLID-STATE IMAGE SENSOR, AND IMAGING SYSTEM - The present technology relates to solid-state image sensor and an imaging system which are capable of providing a solid-state image sensor and an imaging system which are capable of realizing a spectroscopic/imaging device for visible/near-infrared light having a high sensitivity and high wavelength resolution, and of achieving two-dimensional spectrum mapping with high spatial resolution. There are provided a two-dimensional pixel array, and a plurality of types of filters that are arranged facing a pixel region of the two-dimensional pixel array, the filters each including a spectrum function and a periodic fine pattern shorter than a wavelength to be detected, wherein each of the filters forms a unit which is larger than the photoelectric conversion device of each pixel on the two-dimensional pixel array, where one type of filter is arranged for a plurality of adjacent photoelectric conversion device groups, wherein the plurality of types of filters are arranged for adjacent unit groups to form a filter bank, and wherein the filter banks are arranged in a unit of N×M, where N and M are integers of one or more, facing the pixel region of the two-dimensional pixel array. | 05-29-2014 |
Patent application number | Description | Published |
20110031593 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND SEMICONDUCTOR DEVICE - There are provided a method of manufacturing a semiconductor device, a substrate processing apparatus, and a semiconductor device. The method allows rapid formation of a conductive film, which has a low concentration of impurities permeated from a source owing to its dense structure, and a low resistivity. The method is performed by simultaneously supplying two or more kinds of sources into a processing chamber to form a film on a substrate placed in the processing chamber. The method comprises: performing a first source supply process by supplying at least one kind of source into the processing chamber at a first supply flow rate; and performing a second source supply process by supplying the at least one kind of source into the processing chamber at a second supply flow rate different from the first supply flow rate. | 02-10-2011 |
20110059600 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, CLEANING METHOD, AND SUBSTRATE PROCESSING APPARATUS - It is possible to efficiently remove deposited materials such as a conductive film or insulting film adhered to parts such as the inner wall of a processing chamber and a substrate supporting tool disposed in the processing chamber. There is provided a method of manufacturing a semiconductor device. The method comprises: loading a substrate into a processing chamber; forming a conductive film or an insulating film on the substrate by supplying a plurality of source gases into the processing chamber; unloading the substrate from the processing chamber; and modifying a conductive film or an insulating film adhered to the processing chamber by supplying a modifying gas into the processing chamber. After performing a cycle of the loading, the forming, the unloading, and the modifying processes a plurality of times, the modified conductive film or the modified insulating film adhered to the processing chamber is removed from the processing chamber by supplying a cleaning gas into the processing chamber. | 03-10-2011 |
20110212623 | Substrate treatment device - It is intended to provide a substrate treatment device capable of adjusting both of a growth speed and an etching speed in a selective epitaxial growth, avoiding particle generation from nozzles, and achieving good etching characteristics. A substrate treatment device for selectively growing an epitaxial film on a surface of a substrate by alternately supplying a raw material gas containing silicon and an etching gas to a treatment chamber, the substrate treatment device being provided with a substrate support member for supporting the substrate in the treatment chamber, a heating member provided outside the treatment chamber for heating the substrate and an atmosphere of the treatment chamber, a gas supply system provided inside the treatment chamber, and a discharge port opened on the treatment chamber, wherein the gas supply system comprises first gas supply nozzles for supplying the raw material gas and second gas supply nozzles for supplying the etching gas. | 09-01-2011 |
20110290182 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, CLEANING METHOD, AND SUBSTRATE PROCESSING APPARATUS - It is possible to efficiently remove deposited materials such as a conductive film or insulting film adhered to parts such as the inner wall of a processing chamber and a substrate supporting tool disposed in the processing chamber. There is provided a method of manufacturing a semiconductor device. The method comprises: loading a substrate into a processing chamber; forming a conductive film or an insulating film on the substrate by supplying a plurality of source gases into the processing chamber; unloading the substrate from the processing chamber; and modifying a conductive film or an insulating film adhered to the processing chamber by supplying a modifying gas into the processing chamber. After performing a cycle of the loading, the forming, the unloading, and the modifying processes a plurality of times, the modified conductive film or the modified insulating film adhered to the processing chamber is removed from the processing chamber by supplying a cleaning gas into the processing chamber. | 12-01-2011 |
20140080317 | MEHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND SUBSTRATE PROCESSING APPARATUS - A stress of a film formed on a substrate can be reduced. A method of manufacturing a semiconductor device includes: forming a film on the substrate by supplying a process gas to the substrate while heating the substrate to a first temperature; controlling a stress to the film by changing a stress value of the film formed on the substrate, by supplying a plasma-excited process gas to the substrate while changing a temperature of the substrate to a second temperature different from the first temperature; and unloading the substrate from the processor chamber. | 03-20-2014 |
20150262816 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SUBSTRATE PROCESSING APPARATUS - There are provided a method of manufacturing a semiconductor device, a substrate processing apparatus, and a semiconductor device. The method allows rapid formation of a conductive film, which has a low concentration of impurities permeated from a source owing to its dense structure, and a low resistivity. The method is performed by simultaneously supplying two or more kinds of sources into a processing chamber to form a film on a substrate placed in the processing chamber. The method comprises: performing a first source supply process by supplying at least one kind of source into the processing chamber at a first supply flow rate; and performing a second source supply process by supplying the at least one kind of source into the processing chamber at a second supply flow rate different from the first supply flow rate. | 09-17-2015 |
Patent application number | Description | Published |
20090104740 | Semiconductor device producing method - Disclosed is a producing method of a semiconductor device, including: loading a silicon substrate into a processing chamber, the silicon substrate having a silicon nitride film or a silicon oxide film on at least a portion of a surface thereof and a silicon surface being exposed from the surface; and alternately repeating a first introducing at least a silane-compound gas into the processing chamber and a second introducing at least etching gas a plurality of times to selectively grow an epitaxial film on the silicon surface, wherein the alternate repeating is started with the second introducing prior to the first introducing. | 04-23-2009 |
20110183519 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SUBSTRATE PROCESSING APPARATUS - A method of manufacturing a semiconductor device and a substrate processing apparatus capable of providing a TiN film that is higher in quality than a TiN film formed by a conventional CVD method at a higher film-forming rate, that is, with a higher productivity than a TiN film formed by an ALD method. The method includes steps of: (a) loading a substrate into a processing chamber; (b) forming a predetermined film on the substrate by simultaneously supplying the first processing gas and the second processing gas into the processing chamber; (c) stopping the supply of the first processing gas and the second processing gas and removing the first processing gas and the second processing gas remaining in the processing chamber; (d) modifying the film formed on the substrate by supplying the second processing gas into the processing chamber after the step (c); and (e) unloading the substrate from the processing chamber, wherein, in the step (b), a time period for supplying the second processing gas into the processing chamber is longer than a time period for supplying the first processing gas into the processing chamber. | 07-28-2011 |
20110186984 | SUBSTRATE PROCESSING APPARATUS AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - Provided are a substrate processing apparatus and a method of manufacturing a semiconductor device which are able to form a conductive film, which is dense, includes a low concentration of source-derived impurities and has low resistivity, at a higher film-forming rate. The substrate processing apparatus includes a processing chamber configured to stack and accommodate a plurality of substrates; a first processing gas supply system configured to supply a first processing gas into the processing chamber; a second processing gas supply system configured to supply a second processing gas into the processing chamber; and a control unit configured to control the first processing gas supply system and the second processing gas supply system. Here, at least one of the first processing gas supply system and the second processing gas supply system includes two nozzles which are vertically arranged in a stacking direction of the substrates and have different shapes, and the control unit is configured to supply at least one of the first processing gas and the second processing gas into the processing chamber through the two nozzles having different shapes when films are formed on the substrates by supplying the first processing gas and the second processing gas into the processing chamber at pulses having different film-forming rates. | 08-04-2011 |
20120108077 | SUBSTRATE PROCESSING APPARATUS AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD - Disclosed is a substrate processing apparatus that includes: a substrate supporting member that supports a substrate; a processing chamber capable of housing the substrate supporting member; a rotating mechanism that rotates the substrate supporting member; a carrying mechanism that carries out the substrate supporting member from the processing chamber; a material gas supply system that supplies material gas into the processing chamber; a nitrogen-containing-gas supply system that supplies nitrogen containing gas into the processing chamber; and a controller that controls the material gas supply system, the nitrogen-containing-gas supply system, the carrying mechanism, and the rotating mechanism, after forming a nitride film on the substrate by using the material gas and the nitrogen containing gas, to carry out the substrate supporting member that supports the substrate while being rotated from the processing chamber. | 05-03-2012 |
20120214300 | SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SUBSTRATE PROCESSING APPARATUS - Provided are a semiconductor device manufacturing method and a substrate processing apparatus that are capable of increasing a work function of a film to be formed, in comparison with a related art. A cycle including (a) supplying a metal-containing gas into a processing chamber where a substrate is accommodated (b) supplying a nitrogen-containing gas into the processing chamber; and (c) supplying one of an oxygen-containing gas, a halogen-containing gas and a combination thereof into the processing chamber, is performed a plurality of times to form a metal-containing film on the substrate. | 08-23-2012 |
20140162454 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SUBSTRATE PROCESSING APPARATUS - Provided is a method of manufacturing a semiconductor device. The method includes (a) loading a substrate into a processing chamber; (b) starting a supply of a first processing gas into the processing chamber; (c) starting a supply of a second processing gas into the processing chamber during the supply of the first processing gas; (d) stopping the supply of the second processing gas during the supply of the first processing gas; (e) stopping the supply of the first processing gas after performing the step (d); (f) removing the first processing gas and the second processing gas remaining after performing the step (e) from the processing chamber; and (g) unloading the substrate from the processing chamber. | 06-12-2014 |
20150225852 | METHOD OF FORMING METAL-CONTAINING FILM - Provided are a semiconductor device manufacturing method and a substrate processing apparatus that are capable of increasing a work function of a film to be formed, in comparison with a related art. The method comprises: (a) supplying a metal-containing gas simultaneously with one selected from the group consisting of an oxygen-containing gas, a halogen-containing gas and combinations thereof into a processing chamber accommodating the substrate; and (b) supplying a nitrogen-containing gas with one of the oxygen-containing gas, the halogen-containing gas and the combinations thereof into the processing chamber. | 08-13-2015 |
Patent application number | Description | Published |
20120126646 | INTERMEDIATE CONNECTION MEMBER, STATOR AND MOTOR - An intermediate connection member which electrically connects an output terminal of a bus bar installed inside a motor case with an external connection terminal located in a distance from the output terminal. The intermediate connection member preferably includes both of a terminal member which is connected to the output terminal and a connecting line which is connected to the external connection terminal. The connecting line is defined by binding a plurality of wire rods together. | 05-24-2012 |
20120286593 | STATOR AND MOTOR - A stator is compatible with a variety of wiring configurations and possesses excellent versatility, while also preventing an increase in the size of a busbar unit. The stator includes a plurality of stator segments joined together to assume a cylindrical shape. Each stator segment includes a core segment including a core back portion and a tooth portion; a coil including a pair of coil wire terminals; an insulating layer arranged between the coil and the tooth portion; and a resin layer arranged to have the entire coil except for the coil wire terminals embedded therein. The resin layers of the stator segments include a supporting structure defined therein to allow a wiring member to be connected with any of the coil wire terminals to be attached to and removed from the stator. | 11-15-2012 |
20120293024 | STATOR SEGMENT AND MOTOR - A stator segment arranged to define a portion of an annular stator includes a core segment including a core back portion arranged to extend in a circumferential direction of the stator, and a tooth portion arranged to extend from the core back portion in a radial direction of the stator; a coil wound around the tooth portion and including a pair of coil wire terminals; an insulating layer arranged between the coil and the tooth portion; and a resin layer arranged to seal the entire coil except for the pair of coil wire terminals. Circumferential end walls of the resin layer are arranged circumferentially inward of circumferential end walls of the core back portion. | 11-22-2012 |
20130119808 | MOTOR - A rotary unit of a motor includes a shaft, a ring-shaped plate, a rotor core defined by a plurality of core pieces, and a plurality of magnets arranged along the circumferential direction. The core pieces and the magnets are alternately arranged in the circumferential direction. The ring-shaped plate and the respective core pieces are fixed to each other by combining the recesses provided in one of the ring-shaped plate and the respective core pieces and the protrusions provided in the other of the ring-shaped plate and the respective core pieces or combining a first through-hole provided in the ring-shaped plate and a protrusion provided in each of the core pieces. The core pieces are fixed to the ring-shaped plate without having to provide a through-hole in each of the core pieces. This reduces a magnetic resistance of each of the core pieces. | 05-16-2013 |
20130169106 | SINGLE-PHASE INDUCTION MOTOR - A single-phase induction motor in which coils are wound around a plurality of teeth by a concentrated winding method is constructed such that an area of a smallest of all cross-sections of a core back element taken along planes which are parallel or substantially parallel to an axial direction is about 0.90 or more times an area of the smallest of all cross-sections of the teeth taken along planes which are parallel or substantially parallel to the axial direction, to prevent or minimize leakage of the magnetic flux. | 07-04-2013 |
20130181569 | BUS BAR, MOTOR, AND PROCESS FOR PRODUCING THESE - A bus bar which electrically connects end portions of a plurality of conductive lines and a method for manufacturing the bus bar are such that an intermediate region of a single wire rod is folded to define a plurality of terminal forming portions extending to a lateral direction of the wire rod. The whole wire rod including the terminal forming portion is rolled. The rolled wire rod is bent into a certain shape. | 07-18-2013 |
20130193800 | ARMATURE AND MOTOR - An insulator of an armature includes an upper resin member and a lower resin member. Each of the upper and lower resin members includes decreased thickness portions. Axial positions of the decreased thickness portions of the upper and lower resin members are arranged to overlap at least partially with each other. Each of the upper and lower resin members further includes a rib arranged to project from a corresponding one of the decreased thickness portions. The rib improves the strength of the corresponding decreased thickness portion and reduces the likelihood that any of the decreased thickness portions of the upper and lower resin members will be damaged when the two members are fitted to each other. | 08-01-2013 |
20130221770 | ARMATURE AND MOTOR INCLUDING ARMATURE - An armature includes an insulator mounted on a tooth portion around which a conducting wire is wound. A pair of a first member and a second member, which are combined so as to abut each other, is provided. The first member includes a first end wall which covers an upper side end in the axial direction of the tooth portion and a pair of first side walls which partially cover both side portions of the tooth portion. A first overlap portion is provided on a tip portion of the first side wall. A plurality of ribs extending so as to be parallel or substantially parallel to the winding direction of the conducting wire is disposed on an outer surface of the first overlap portion. | 08-29-2013 |
20130257183 | STATOR PORTION OF MOLDED MOTOR, AND MOLDED MOTOR INCLUDING THE SAME - A stator portion of a molded motor includes a plurality of windings, a wiring board, and a resin arranged to cover at least a surface of each winding. The wiring board includes a through hole extending through the wiring board in an axial direction. The through hole is arranged axially opposite to any winding to facilitate discharge of air out of a gap between the wiring board and the winding during a molding process, while the distance between the wiring board and each opposed winding is short in the stator portion of the molded motor. The resin is thus continuously arranged in gaps between the windings and the gap between the wiring board and each opposed winding. | 10-03-2013 |
20140126956 | SOLDER JOINT STRUCTURE AND SOLDER JOINING METHOD - A solder joint structure includes a metal pin in the shape of a prism or a circular or substantially circular cylinder; an aluminum wire including a wound portion wound around the metal pin; and a solder layer arranged to join the metal pin and at least one portion of the wound portion to each other. The at least one portion of the wound portion includes a deformed surface resulting from a partial disappearance or elimination of the aluminum wire in a cross-section perpendicular or substantially perpendicular to a direction in which the aluminum wire extends, and the solder layer is directly and closely adhered to the deformed surface. | 05-08-2014 |
20140346918 | MOTOR AND METHOD OF MANUFACTURING MOTOR - A stationary portion of a motor includes a stator core, insulators, and coils. The stator core includes a core back having an annular shape, and a plurality of teeth extending radially inward from the core back. A radially inner end portion of each tooth has a circumferential width substantially equal to or smaller than a circumferential width of a remaining portion of the tooth. The core back includes a protruding portion protruding radially inward between adjacent teeth, a cut extending radially outward from the protruding portion, and a through hole extending in an axial direction through the core back defined at a radially outer end portion of the cut. The protruding portion increases a radial dimension of the core back to achieve a reduction in magnetic reluctance in the vicinity of the cut. | 11-27-2014 |
20150008769 | MOTOR AND METHOD OF MANUFACTURING MOTOR - A stationary portion of a motor includes resin bodies including an inner and outer resin portion arranged between a tooth and a coil and between the tooth and an insulator. The outer resin portion covers circumferentially outer sides and axially outer sides of the coil. The inner and outer resin portions are continuous with each other through a connecting resin portion. The insulator includes an opening portion arranged to extend along circumferential side surfaces of the tooth. The inner resin portion is arranged to contact the circumferential side surfaces of the tooth and a conducting wire in the opening portion. Heat generated in the coil is transferred to the tooth through the resin body such that a large area of a path along which the heat is transferred from the coil to the tooth is secured. | 01-08-2015 |