Patent application number | Description | Published |
20080197780 | PLASMA PROCESSING APPARATUS - A plasma processing apparatus includes a first high frequency power for outputting a first high frequency, electrically connected to a first electrode disposed inside a depressurizable processing chamber; a heater power supply electrically connected to a heating element provided in the first electrode via filter circuits for reducing noise of the first high frequency. The plasma processing apparatus further includes air core primary inductors provided in primary stages of the filter circuits when seen from the heating element; and a grounded conductive case for surrounding or accommodating the primary inductors. | 08-21-2008 |
20080236492 | PLASMA PROCESSING APPARATUS - In a plasma processing apparatus comprising an evacuable processing chamber, a first electrode disposed in the processing chamber via an insulating body and a second electrode disposed in the processing chamber to face the first electrode, a central conductor and a peripheral conductor are embedded in a main surface of the first electrode via an insulating material while being separately disposed at an electrode central portion and an electrode peripheral portion, respectively. A first radio frequency leaking unit leaks a first radio frequency power applied to the first electrode from a first radio frequency power supply through at least one of the central conductor and the peripheral conductor by a desired current amount. | 10-02-2008 |
20080236753 | PLASMA PROCESSING APPARATUS - A plasma processing apparatus includes a processing chamber; a high frequency electrode provided in the processing chamber; a high frequency power supply for applying a high frequency power to the high frequency electrode; a facing electrode attached to the processing chamber in an electrically floating state; and a facing ground potential portion provided around the facing electrode. The apparatus further includes an impedance controller for variably controlling an impedance of a high frequency power transmitting pass extending from the facing electrode to a ground potential; a processing gas supply unit for supplying a processing gas into a processing space between the high frequency electrode and the facing electrode, and the facing ground potential portion; and a dielectric plate arranged within the processing chamber for covering a surface of the facing ground potential portion. | 10-02-2008 |
20080238440 | MEASURING SYSTEM - A measuring system measuring an impedance of an object to be measured, including an impedance measuring instrument; a casing formed of a grounded conductor and capable of locating the object to be measured therein; and a radially-shaped electrode connected to the impedance measuring instrument and capable of being connected to the object to be measured. | 10-02-2008 |
20080277062 | Plasma Processor - This invention includes a first filter ( | 11-13-2008 |
20090126634 | PLASMA PROCESSING APPARATUS - A plasma processing apparatus includes a processing chamber; a first electrode for mounting thereon a target substrate in the processing chamber; a second electrode which faces the first electrode obliquely or in parallel thereto to form a high frequency discharging capacitor; a processing gas supply unit for supplying a processing gas to a processing space in the processing chamber; a first high frequency power supply for applying a first high frequency power to at least one of the first and the second electrode to generate a plasma by injecting the processing gas into the processing space; and an electrode position varying mechanism for varying a position of the second electrode in a predetermined direction to vary a capacitance of the capacitor. The apparatus further includes a dielectric partition wall for separating the processing space from an electrode moving space surrounding the second electrode and the electrode position varying mechanism. | 05-21-2009 |
20090126871 | PLASMA PROCESSING APPARATUS - A plasma processing apparatus includes a vacuum evacuable processing chamber; a first electrode for mounting thereon a substrate to be processed in the processing chamber; a second electrode facing the first electrode in parallel in the processing chamber; and a processing gas supply unit for supplying a processing gas to a processing space between the first and the second electrode. The apparatus further includes a first high frequency power supply for applying a first high frequency power for generating a plasma of the processing gas to at least one of the first and the second electrode; and a cavity plasma generation unit, having a cavity formed in one of the first and the second electrode, for generating a plasma of a discharging gas in the cavity. | 05-21-2009 |
20090133839 | PLASMA PROCESSING APPARATUS - A plasma processing apparatus includes a processing chamber, a first radio frequency power supply for outputting a first radio frequency power, the first radio frequency power supply being electrically connected to a first electrode arranged in the processing chamber, a heater power supply for supplying electric power to a heating element provided in the first electrode, first and second power supply lines for electrically interconnecting the heating element and the heater power supply, and a filter circuit provided in the first and second power supply lines for attenuating radio frequency noises coming from the heating element. The filter circuit includes a first and a second air-core coil respectively provided on the first and the second power supply line at an initial stage of the filter circuit when viewed from the heating element, the air-core coils being in a coaxial relationship with each other and having substantially the same winding length. | 05-28-2009 |
20090237496 | SUBSTRATE FOR OBSERVATION AND OBSERVATION SYSTEM - An observation substrate for observation capable of observing an overall plasma emission distribution. An observation wafer for observing a plasma emission state in a processing space of a process module of a substrate processing system includes a base and a plurality of image pickup units disposed on a surface of the base facing the processing space. Each of the image pickup units includes a lens and an image pickup device having a memory for storing a picked-up image. | 09-24-2009 |
20090241992 | CLEANING SUBSTRATE AND CLEANING METHOD - A cleaning substrate that can prevent a decrease in the operating rate of a substrate processing apparatus. The cleaning substrate that cleans the interior of a chamber in the substrate processing apparatus has a removal mechanism that removes foreign matter in the chamber. | 10-01-2009 |
20100126668 | PLASMA PROCESSING APPARATUS AND METHOD - An apparatus includes an upper electrode and a lower electrode for supporting a wafer disposed opposite each other within a process chamber. A first RF power supply configured to apply a first RF power having a relatively higher frequency is connected to the upper electrode. A second RF power supply configured to apply a second RF power having a relatively lower frequency is connected to the lower electrode. A variable DC power supply is connected to the upper electrode. A process gas is supplied into the process chamber while any one of application voltage, application current, and application power from the variable DC power supply to the upper electrode is controlled, to generate plasma of the process gas so as to perform plasma etching. | 05-27-2010 |
20100252198 | PLASMA PROCESSING APPARATUS AND METHOD - In a plasma processing apparatus in which a radio-frequency power from a radio-frequency power source is supplied to an electrode disposed in a process vessel, to thereby generate, in the process vessel, plasma with which a substrate is processed, a chemical component emitting member which is caused to emit a chemical component necessary for processing the substrate into the process vessel by entrance of ions in the plasma generated in the process vessel is provided in the process vessel in an exposed state, and an impedance varying circuit varying impedance on the chemical component emitting member side of the plasma generated in the process vessel to frequency of the radio-frequency power source is connected to the chemical component emitting member. | 10-07-2010 |
20110174440 | PLASMA PROCESSING APPARATUS - A plasma processing apparatus includes a vacuum evacuable processing chamber; a first electrode for mounting thereon a substrate to be processed in the processing chamber; a second electrode facing the first electrode in parallel in the processing chamber; and a processing gas supply unit for supplying a processing gas to a processing space between the first and the second electrode. The apparatus further includes a first high frequency power supply for applying a first high frequency power for generating a plasma of the processing gas to at least one of the first and the second electrode; and a cavity plasma generation unit, having a cavity formed in one of the first and the second electrode, for generating a plasma of a discharging gas in the cavity. | 07-21-2011 |
20110214815 | PLASMA PROCESSING APPARATUS AND METHOD - An apparatus includes an upper electrode and a lower electrode for supporting a wafer disposed opposite each other within a process chamber. A first RF power supply configured to apply a first RF power having a relatively higher frequency, and a second RF power supply configured to apply a second RF power having a relatively lower frequency is connected to the lower electrode. A variable DC power supply is connected to the upper electrode. A process gas is supplied into the process chamber to generate plasma of the process gas so as to perform plasma etching. | 09-08-2011 |
20110272097 | PLASMA PROCESSING APPARATUS AND METHOD - A plasma etching apparatus includes an upper electrode and a lower electrode, between which plasma of a process gas is generated to perform plasma etching on a wafer W. The apparatus further comprises a cooling ring disposed around the wafer, a correction ring disposed around the cooling ring, and a variable DC power supply directly connected to the correction ring, the DC voltage being preset to provide the correction ring with a negative bias, relative to ground potential, for attracting ions in the plasma and to increase temperature of the correction ring to compensate for a decrease in temperature of a space near the edge of the target substrate due to the cooling ring. | 11-10-2011 |
20120145324 | PLASMA PROCESSING APPARATUS AND METHOD - An apparatus includes an upper electrode and a lower electrode for supporting a wafer disposed opposite each other within a process chamber. A first RF power supply configured to apply a first RF power having a relatively higher frequency is connected to the upper electrode. A second RF power supply configured to apply a second RF power having a relatively lower frequency is connected to the lower electrode. A variable DC power supply is connected to the upper electrode. A process gas is supplied into the process chamber while any one of application voltage, application current, and application power from the variable DC power supply to the upper electrode is controlled, to generate plasma of the process gas so as to perform plasma etching. | 06-14-2012 |
20120168083 | PLASMA PROCESSING APPARATUS - In a plasma processing apparatus including a vacuum-evacuable processing chamber, a first lower electrode for supporting a substrate to be processed thereon is disposed in the processing chamber and an upper electrode is disposed above the first lower electrode to face the first lower electrode. Further, a second lower electrode is disposed under the first lower electrode while being electrically isolated from the first lower electrode. A processing gas supply unit supplies a processing gas into a space between the upper electrode and the first lower electrode. A first high frequency power supply unit applies a first high frequency power of a first frequency to the first lower electrode, and a second high frequency power supply unit applies a second high frequency power of a second frequency higher than the first frequency to the second lower electrode. | 07-05-2012 |
20120204904 | CLEANING SUBSTRATE AND CLEANING METHOD - A cleaning substrate that can prevent a decrease in the operating rate of a substrate processing apparatus. The cleaning substrate that cleans the interior of a chamber in the substrate processing apparatus has a removal mechanism that removes foreign matter in the chamber. | 08-16-2012 |
20140124139 | PLASMA PROCESSING APPARATUS AND METHOD - A plasma processing apparatus includes a first and second electrodes disposed on upper and lower sides and opposite each other within a process container, a first RF power application unit and a DC power supply both connected to the first electrode, and second and third radio frequency power application units both connected to the second electrode. A conductive member is disposed within the process container and grounded to release through plasma a current caused by a DC voltage applied from the DC power supply. The conductive member is supported by a first shield part around the second electrode and laterally protruding therefrom at a position between the mount face of the second electrode and an exhaust plate for the conductive member to be exposed to the plasma. The conductive member is grounded through a conductive internal body of the first shield part. | 05-08-2014 |
20140326409 | PLASMA PROCESSING APPARATUS AND METHOD - An apparatus includes an upper electrode and a lower electrode for supporting a wafer disposed opposite each other within a process chamber. A first RF power supply configured to apply a first RF power having a relatively higher frequency is connected to the upper electrode. A second RF power supply configured to apply a second RF power having a relatively lower frequency is connected to the lower electrode. A variable DC power supply is connected to the upper electrode. A process gas is supplied into the process chamber while any one of application voltage, application current, and application power from the variable DC power supply to the upper electrode is controlled, to generate plasma of the process gas so as to perform plasma etching. | 11-06-2014 |