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| 20110237009 | LCOS DISPLAY UNIT AND METHOD FOR FORMING THE SAME - An embodiment of the present invention discloses a Liquid Crystal on Silicon (LCOS) display unit, in which a Metal-Insulator-Metal (MIM) capacitor consisting of a micromirror layer, a insulation layer and a light shielding layer is formed by grounding the light shielding layer on a pixel switch circuit layer. Therefore the pixel switch circuit and the capacitor are in vertical distribution, that is, the switch circuit and the capacitor both have an allowable design area of the size of one pixel. Another embodiment of the present invention provides a method for forming a Liquid Crystal on Silicon (LCOS) display unit. | 09-29-2011 |
| 20120009794 | Method for Planarization of Wafer and Method for Formation of Isolation Structure in Top Metal Layer - The invention discloses a planarization method for a wafer having a surface layer with a recess, comprises: forming an etching-resist layer on the surface layer to fill the entire recess; etching the etching-resist layer and the surface layer, till the surface layer outside the recess is flush to or lower than the bottom of the recess, the etching speed of the surface layer being higher than that of the etching-resist layer; removing the etching-resist layer; and etching the surface layer to a predetermined depth. The method can avoid concentric ring recesses on the surface of the wafer resulted from a chemical mechanical polishing (CMP) process in the prior art, and can be used to obtain a wafer surface suitable for optical applications. | 01-12-2012 |
| 20150041948 | SEMICONDUCTOR DEVICE INCLUDING STI STRUCTURE AND METHOD FOR FORMING THE SAME - Semiconductor devices and fabrication methods are disclosed. A mask layer having an opening is formed on a semiconductor substrate. The semiconductor substrate is etched along the opening of the mask layer to form a trench therein. The mask layer is laterally etched from the opening of the mask layer along a top surface of the semiconductor substrate to expose a surface portion of the semiconductor substrate on each side of the opening. A liner oxide layer is formed by a thermal oxidation process on interior surface of the trench and on the exposed surface portion of the semiconductor substrate. The thermal oxidation process is controlled such that an upper corner between the top surface of the semiconductor substrate and the trench is rounded after the liner oxide layer is formed. An insulation layer is formed on the liner oxide layer and fills the trench. | 02-12-2015 |
| 20150179571 | METAL INTERCONNECT STRUCTURES AND FABRICATION METHOD THEREOF - A method is provided for fabricating a metal interconnection structure. The method includes providing a semiconductor substrate having an active region and an isolation structure surrounding the active region; and forming a metal layer on a surface of the semiconductor substrate. The method also includes forming a metal silicide layer on the active region by a reaction of the metal layer and material of the active regions; and forming an inter metal connection layer electrically connecting with the active regions on the isolation structure. Further, the method includes forming a dielectric layer covering the metal silicide layer, the isolation structure and the inter metal connection layer on the semiconductor substrate; and forming a metal contact via electrically connecting with the active region through the inter metal connection layer in the dielectric layer. | 06-25-2015 |
| 20150262820 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A method for manufacturing a semiconductor device may include the following steps: preparing a semiconductor substrate that includes a first substrate region, a second substrate region, and a third substrate region; providing a first mask that overlaps the semiconductor substrate; etching, using the first mask, the first semiconductor substrate to form a trench in each of the substrate regions; providing a second mask that overlaps the semiconductor substrate and includes three openings corresponding to the substrate regions; performing first ion implantation through the three openings to form a P-doped region in each of the substrate regions; performing second ion implantation through the three openings to form an N-doped region in each of the substrate regions; and performing third ion implantation through the three openings to form another N-doped region in each of the substrate regions; and forming an isolation member in each of the trenches. | 09-17-2015 |
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| 20150303115 | MODIFICATION OF A THRESHOLD VOLTAGE OF A TRANSISTOR BY OXYGEN TREATMENT - Methodologies and resulting devices are provided for modified FET threshold voltages. Embodiments include: providing an active region of a transistor on a semiconductor substrate; depositing a workfunction metal on the active region; and modifying a threshold voltage of the transistor by treating the workfunction metal with oxygen. Other embodiments include: providing first and second active regions in a semiconductor substrate for first and second transistors, respectively; forming a first workfunction metal on the first active region; forming a second workfunction metal on the second active region; and modifying a first threshold voltage level of the first transistor, a second threshold voltage level of the second transistor, or a combination thereof by treating the first workfunction metal, second workfunction metal, or a combination thereof with oxygen, wherein the second threshold voltage level is greater than the first threshold voltage level. | 10-22-2015 |
| 20150380409 | THRESHOLD VOLTAGE CONTROL FOR MIXED-TYPE NON-PLANAR SEMICONDUCTOR DEVICES - A range of lowest, low and regular threshold voltages are provided to three p-type devices and three n-type devices co-fabricated on a same substrate. For the p-type devices, the range is achieved for the lowest using an additional thick layer of a p-type work function metal in a gate structure and oxidizing it, the low Vt is achieved with the thick p-type work function metal alone, and the regular Vt is achieved with a thinner layer of the p-type work function metal. For the n-type devices, the lowest Vt is achieved by implanting tantalum nitride with arsenic, argon, silicon or germanium and not adding any of the additional p-type work function metal in the gate structure, the low Vt is achieved by not adding the additional p-type work function metal, and the regular Vt is achieved with a thinnest layer of the p-type work function metal. | 12-31-2015 |
| 20160049400 | THRESHOLD VOLTAGE CONTROL FOR MIXED-TYPE NON-PLANAR SEMICONDUCTOR DEVICES - A range of lowest, low and regular threshold voltages are provided to three p-type devices and three n-type devices co-fabricated on a same substrate. For the p-type devices, the range is achieved for the lowest using an additional thick layer of a p-type work function metal in a gate structure and oxidizing it, the low Vt is achieved with the thick p-type work function metal alone, and the regular Vt is achieved with a thinner layer of the p-type work function metal. For the n-type devices, the lowest Vt is achieved by implanting tantalum nitride with arsenic, argon, silicon or germanium and not adding any of the additional p-type work function metal in the gate structure, the low Vt is achieved by not adding the additional p-type work function metal, and the regular Vt is achieved with a thinnest layer of the p-type work function metal. | 02-18-2016 |
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| 20130017158 | Oral Care Compositions Comprising Phytic AcidAANM HOKE II; Steven HamiltonAACI West ChesterAAST OHAACO USAAGP HOKE II; Steven Hamilton West Chester OH USAANM STRAND; RossAACI BeijingAACO CNAAGP STRAND; Ross Beijing CNAANM WANG; XiaoliAACI BeijingAACO CNAAGP WANG; Xiaoli Beijing CNAANM ZHANG; YiqunAACI BeijingAACO CNAAGP ZHANG; Yiqun Beijing CN - An oral care composition comprising a stannous ion source and/or a zinc ion source; a phytic acid or a phytic acid salt or mixtures thereof; characterised in that the phytic acid or phytic acid salt has an average IPn of greater than 5.2. In a composition which comprises stannous, there is a decrease in soluble stannous whilst maintaining an equivalent efficacy to a composition comprising a higher level of soluble stannous and efficacy is observed for avoiding stain and astringency problems. When zinc ions are present, it has been surprisingly found that a decrease in soluble zinc can provide an equivalent antimicrobial efficacy to a composition comprising a greater level of soluble zinc. | 01-17-2013 |
| 20140377188 | Oral Composition Indicative Of Proper Tooth Cleaning - The present invention provides an oral care composition, containing at least 0.5% by weight of silica agglomerates, wherein each of the silica agglomerates has: (i) an overall particle size from 200 μm to 2000 μm, and (ii) a crush strength from 0.1N to 5N. The silica particles that make up the silica agglomerate can have an average particle size from 1 μm to 50 μm. The composition can have a viscosity from 10 to 90 BKU. The present invention also provides a method of encouraging proper tooth cleaning by administering the oral care composition of the present invention to a subject's tooth surface. The present invention further provides the use of a silica agglomerate in manufacturing an oral care composition for encouraging proper tooth cleaning | 12-25-2014 |
| 20140377194 | Stain-Proof Oral Care Composition - The present invention provides an oral care composition containing (a) a zinc citrate; and (b) a surface-active organophosphate compound. The present invention also relates to a method of preventing a stain from depositing on a tooth surface or other oral surfaces. The present invention further relates to a method of demonstrating stain-proof efficacy of an oral care composition, as well as a demonstration product comprising a substrate coated with hydroxyapatite. | 12-25-2014 |
| 20140377315 | Oral Composition Indicative Of Proper Tooth Cleaning - The present invention provides an oral care composition for encouraging proper tooth cleaning, containing particulate materials which can be breakable under a brushing action with a brushing force from 0.1N to 5N. The particulate materials can have a particle size distribution characterized by (1) a change ratio of mean particle size before and after the brushing action is at least 20%, (2) a change ratio of D90 before and after the brushing action is at least 20%, (3) at least 5% of the particulate materials have a particle size greater than 200 μm before the brushing action, and (4) no more than 30% of the particulate materials have a particle size greater than 200 μm after the brushing action. The oral care composition can have a viscosity ranging from 10 to 90 BKU. | 12-25-2014 |
