Patent application number | Description | Published |
20120306073 | Connector Design for Packaging Integrated Circuits - A device includes a top dielectric layer having a top surface. A metal pillar has a portion over the top surface of the top dielectric layer. A non-wetting layer is formed on a sidewall of the metal pillar, wherein the non-wetting layer is not wettable to the molten solder. A solder region is disposed over and electrically coupled to the metal pillar. | 12-06-2012 |
20120306080 | Packaging Structures and Methods - A package component is free from active devices therein. The package component includes a substrate, a through-via in the substrate, a top dielectric layer over the substrate, and a metal pillar having a top surface over a top surface of the top dielectric layer. The metal pillar is electrically coupled to the through-via. A diffusion barrier is over the top surface of the metal pillar. A solder cap is disposed over the diffusion barrier. | 12-06-2012 |
20130026620 | SELF-ALIGNING CONDUCTIVE BUMP STRUCTURE AND METHOD OF MAKING THE SAME - The disclosure relates to a conductive bump structure of a semiconductor device. An exemplary structure for a semiconductor device comprises a substrate comprising a major surface and conductive bumps distributed over the major surface of the substrate. Each of a first subset of the conductive bumps comprise a regular body, and each of a second subset of the conductive bumps comprise a ring-shaped body. | 01-31-2013 |
20130122700 | Multi-Die Stacking Using Bumps with Different Sizes - A device includes a first die having a first side and a second side opposite to first side, the first side includes a first region and a second region, and a first metal bump of a first horizontal size formed on the first region of the first side of the first die. A second die is bonded to the first metal bump at the first side of the first die. A dielectric layer is formed over the first side of the first die and includes a first portion directly over the second die, a second portion covering the second die. A second metal bump of a second horizontal size greater than the first horizontal size is formed on the second region of the first side of the first die. An electrical component is bonded to the first side of the first die through the second metal bump. | 05-16-2013 |
20130175694 | Packages and Method of Forming the Same - A method includes forming a dielectric layer over a substrate, forming an interconnect structure over the dielectric layer, and bonding a die to the interconnect structure. The substrate is then removed, and the dielectric layer is patterned. Connectors are formed at a surface of the dielectric layer, wherein the connectors are electrically coupled to the die. | 07-11-2013 |
20130199577 | Flux Residue Cleaning System and Method - A flux residue cleaning system includes first and second immersion chambers, first and second spray chambers, and a drying chamber. The first immersion chamber softens an outer region of a flux residue formed around microbumps interposed between a wafer and a die when the wafer is immersed in a first chemical. The first spray chamber removes the outer region of the flux residue when the wafer is impinged upon by a first chemical spray in order to expose an inner region of the flux residue. The second immersion chamber softens the inner region of the flux residue when the wafer is immersed in a second chemical. The second spray chamber removes the inner region of the flux residue when the wafer is impinged upon by a second chemical spray in order to clean the wafer to a predetermined standard. The drying chamber dries the wafer. | 08-08-2013 |
20130309813 | Embedded 3D Interposer Structure - A device includes an interposer, which includes a substrate; and at least one dielectric layer over the substrate. A plurality of through-substrate vias (TSVs) penetrate through the substrate. A first metal bump is in the at least one dielectric layer and electrically coupled to the plurality of TSVs. A second metal bump is over the at least one dielectric layer. A die is embedded in the at least one dielectric layer and bonded to the first metal bump. | 11-21-2013 |
20140038405 | Packaging Structures and Methods with a Metal Pillar - A package component is free from active devices therein. The package component includes a substrate, a through-via in the substrate, a top dielectric layer over the substrate, and a metal pillar having a top surface over a top surface of the top dielectric layer. The metal pillar is electrically coupled to the through-via. A diffusion barrier is over the top surface of the metal pillar. A solder cap is disposed over the diffusion barrier. | 02-06-2014 |
20140110836 | Packaging Devices, Methods of Manufacture Thereof, and Packaging Methods - Packaging devices, methods of manufacture thereof, and packaging methods for semiconductor devices are disclosed. In one embodiment, a packaging device includes a substrate including an integrated circuit die mounting region. An underfill material flow prevention feature is disposed around the integrated circuit die mounting region. | 04-24-2014 |
20140131864 | Connector Design for Packaging Integrated Circuits - A device includes a top dielectric layer having a top surface. A metal pillar has a portion over the top surface of the top dielectric layer. A non-wetting layer is formed on a sidewall of the metal pillar, wherein the non-wetting layer is not wettable to the molten solder. A solder region is disposed over and electrically coupled to the metal pillar. | 05-15-2014 |
20140210074 | Semiconductor Devices, Methods of Manufacture Thereof, and Semiconductor Device Packages - Semiconductor devices, methods of manufacture thereof, and semiconductor device packages are disclosed. In one embodiment, a semiconductor device includes an insulating material layer having openings on a surface of a substrate. One or more insertion bumps are disposed over the insulating material layer. The semiconductor device includes signal bumps having portions that are not disposed over the insulating material layer. | 07-31-2014 |
20140332033 | Flux Residue Cleaning System and Method - A flux residue cleaning system includes first and second immersion chambers, first and second spray chambers, and a drying chamber. The first immersion chamber softens an outer region of a flux residue formed around microbumps interposed between a wafer and a die when the wafer is immersed in a first chemical. The first spray chamber removes the outer region of the flux residue when the wafer is impinged upon by a first chemical spray in order to expose an inner region of the flux residue. The second immersion chamber softens the inner region of the flux residue when the wafer is immersed in a second chemical. The second spray chamber removes the inner region of the flux residue when the wafer is impinged upon by a second chemical spray in order to clean the wafer to a predetermined standard. The drying chamber dries the wafer. | 11-13-2014 |
20150014863 | Dam Structure for Enhancing Joint Yield in Bonding Processes - A package structure includes a bottom package component, a top package component overlying and bonded to the bottom package component, and a dam between the bottom package component and the top package component. The dam has a top surface attached to a bottom surface of the top package component, and a bottom surface spaced apart from a top surface of the bottom package component. | 01-15-2015 |