Patent application number | Description | Published |
20090030631 | METHOD FOR ENHANCING THE MEASUREMENT CAPABILITY OF MULTI-PARAMETER INSPECTION SYSTEMS - A method for improving the measurement capability of multi-parameter inspection systems includes performing a measuring procedure to acquire a measured signature of a sample, calculating weighting factors representing a correlation between structural parameters of the sample by using a weighting algorithm, transforming the weighting factors into a sampling function by using a transforming rule, updating the measured signature to form an updated measured signature and generating a plurality of updated nominal signatures according to the sampling function, and comparing the updated measured signature and the updated nominal signatures to determine the structural parameters of the sample. | 01-29-2009 |
20090079969 | Method and apparatus for scatterfield microscopical measurement - A method and an apparatus are disclosed for scatterfield microscopical measurement. The method integrates a scatterometer and a bright-field microscope for enabling the measurement precision to be better than the optical diffraction limit. With the aforesaid method and apparatus, a detection beam is generated by performing a process on a uniform light using an LCoS (liquid crystal on silicon) or a DMD (digital micro-mirror device) which is to directed to image on the back focal plane of an object to be measured, and then scattered beams resulting from the detection beam on the object's surface are focused on a plane to form an optical signal which is to be detected by an array-type detection device. The detection beam can be oriented by the modulation device to illuminate on the object at a number of different angles, by which zero order or higher order diffraction intensities at different positions of the plane at different incident angles can be collected. | 03-26-2009 |
20090116035 | Structure and method for overlay measurement - A structure for overlay measurement is provided in the present invention, using the diffraction characteristics on the boundary portion between two microstructures formed on each of two material layers. The optical intensity distribution on the boundary portion between microstructures formed on the two overlaid material layers respectively are measured by an optical microscope to obtain the overlay error between the two overlaid material layers. In addition, the present invention also provides a method for overlay measurement using the structure for overlay measurement, wherein a merit relation based on the optical intensity distribution on the boundary portion between different microstructures is determined. The merit relation can be used to analyze the overlay error to improve the efficiency and accuracy of on-line error measurement. | 05-07-2009 |
20090313589 | METHOD FOR DESIGNING OVERLAY TARGETS AND METHOD AND SYSTEM FOR MEASURING OVERLAY ERROR USING THE SAME - A method for designing an overlay target comprises selecting a plurality of overlay target pairs having different overlay errors or offsets, calculating a deviation of the simulated diffraction spectrum for each overlay target pair, selecting a plurality of sensitive overlay target pairs by taking the deviation of the simulated diffraction spectrum into consideration, selecting an objective overlay target pair from the sensitive overlay target pairs by taking the influence of the structural parameters to the simulated diffraction spectrum into consideration, and designing the overlay target pair based on the structural parameter of the objective overlay target pair. | 12-17-2009 |
20100007881 | SCATTERFIELD MICROSCOPICAL MEASURING METHOD AND APPARATUS - The present invention provides a scatterfield microscopical measuring method and apparatus, which combine scatterfield detecting technology into microscopical device so that the microscopical device is capable of measuring the sample whose dimension is under the limit of optical diffraction. The scatterfield microscopical measuring apparatus is capable of being controlled to focus uniform and collimated light beam on back focal plane of an objective lens disposed above the sample. By changing the position of the focus position on the back focal plane, it is capable of being adjusted to change the incident angle with respect to the sample. | 01-14-2010 |
20100053627 | REFLECTIVE SCATTEROMETER - A reflective scatterometer capable of measuring a sample is provided. The reflective scatterometer includes a paraboloid mirror, a light source, a first reflector, a second reflector and a detector. The paraboloid mirror has an optical axis and a parabolic surface, wherein the sample is disposed on the focal point of the parabolic surface and the normal direction of the sample is parallel with the optical axis. A collimated beam generated from the light source is reflected by the first reflector to the parabolic surface and then is reflected by the parabolic surface to the sample to form a first diffracted beam. The first diffracted beam is reflected by the parabolic surface to the second reflector and is then reflected by the second reflector to the detector. | 03-04-2010 |
20110131538 | METHOD FOR DESIGNING TWO-DIMENSIONAL ARRAY OVERLAY TARGETS AND METHOD AND SYSTEM FOR MEASURING OVERLAY ERRORS USING THE SAME - A method for designing a two-dimensional array overlay target comprises the steps of: selecting a plurality of two dimensional array overlay targets having different overlay errors; calculating a deviation of a simulated diffraction spectrum for each two-dimensional array overlay target; selecting an error-independent overlay target by taking the deviations of the simulated diffraction spectra into consideration; and designing a two dimensional array overlay target based on structural parameters of the error-independent overlay target. | 06-02-2011 |
20110154272 | METHOD FOR DESIGNING TWO-DIMENSIONAL ARRAY OVERLAY TARGET SETS AND METHOD AND SYSTEM FOR MEASURING OVERLAY ERRORS USING THE SAME - A method for designing a two-dimensional array overlay target set comprises the steps of: selecting a plurality of two-dimensional array overlay target sets having different overlay errors; calculating a deviation of a simulated diffraction spectra for each two-dimensional array overlay target set; selecting a sensitive overlay target set by taking the deviations of the simulated diffraction spectra into consideration; and designing a two-dimensional array overlay target set based on the structural parameters of the sensitive overlay target set. | 06-23-2011 |
20110172974 | SYSTEM AND METHOD FOR VIA STRUCTURE MEASUREMENT - A system for via structure measurement is disclosed. The system comprises a reflectometer, a simulation unit and a comparing unit. The reflectometer is configured to collect a measured diffraction spectrum of at least a via. The simulation unit is configured to provide simulated diffraction spectrums of the at least a via. The comparing unit is configured to determine at least a depth and at least a bottom profile of the at least a via by comparing the collected diffraction spectrum and the simulated diffraction spectrums. | 07-14-2011 |
20110320986 | METHOD FOR DESIGNING OVERLAY TARGETS AND METHOD AND SYSTEM FOR MEASURING OVERLAY ERROR USING THE SAME - A method for designing an overlay target comprises selecting a plurality of overlay target pairs having different overlay errors or offsets, calculating a deviation of the simulated diffraction spectrum for each overlay target pair, selecting a plurality of sensitive overlay target pairs by taking the deviation of the simulated diffraction spectrum into consideration, selecting an objective overlay target pair from the sensitive overlay target pairs by taking the influence of the structural parameters to the simulated diffraction spectrum into consideration, and designing the overlay target pair based on the structural parameter of the objective overlay target pair. | 12-29-2011 |
20120147171 | METHOD FOR MEASURING VIA BOTTOM PROFILE - A method for measuring a via bottom profile is disclosed for obtaining a profile of a bottom of a via in a front side of a substrate. In this method, an infrared (IR) light source is transmitted from the back of the substrate to the bottom of the via through an objective by using an IR-microscope, and lights scattered from the bottom of the via are acquired by an image capturing device to generate an image, where the image displays a diameter ( | 06-14-2012 |
20120197592 | SYSTEM, METHOD AND COMPUTER READABLE MEDIUM FOR THROUGH SILICON VIA STRUCTURE MEASUREMENT - A system for through silicon via (TSV) structure measurement comprises a reflectometer, and a computing unit. The reflectometer emits a broadband light beam to at least a TSV structure and receives a reflection spectrum of at least a TSV structure. The computing unit is coupled with the reflectometer and determines the depth of the TSV structure in accordance with the reflection spectrum. | 08-02-2012 |
20120290239 | THIN METAL FILM MEASUREMENT METHOD - A thin metal film measurement method is disclosed. The method includes the following steps. A respective capacitance is measured before and after a thin metal film is formed. The thickness of the thin metal film is calculated according to the variation of the capacitance. In an embodiment, the capacitance is measured respectively by a capacitance measuring module before and after the thin metal film is formed so as to calculate the thickness of the thin metal film. In another embodiment, a pair of capacitance measuring modules opposite at up and down sides is applied to measure the capacitance before and after the thin metal film is formed so as to calculate the thickness of the thin metal film. | 11-15-2012 |
20140085640 | MEASUREMENT SYSTEMS AND MEASUREMENT METHODS - A measurement system is provided to measure a hole of a target, including a light source generation unit, a capturing unit and a processing unit. The light source generation unit generates a light source and focuses the light source on a plurality of different height planes. The capturing unit captures a plurality of images scattered from the plurality of different height planes. The processing unit obtains boundaries of the hole on the plurality of different height planes according to the plurality of images, samples image intensities of different azimuth angles on the boundaries of the hole on each of the plurality of different height planes to generate a plurality of sampling values, and develops a sidewall image of the hole according to the plurality of sampling values, the plurality of different height planes and the different azimuth angles. | 03-27-2014 |
20140333936 | THICKNESS MEASURING SYSTEM AND METHOD FOR A BONDING LAYER - In a thickness measuring system for a bonding layer according to an exemplary embodiment, an optical element changes the wavelength of a first light source to enable at least one second light source propagating through a bonding layer to be incident to an object, wherein the bonding layer has an upper interface and a lower interface that are attached to the object; and an optical image capturing and analysis unit receives a plurality of reflected lights from the upper and the lower interfaces to capture a plurality of interference images of different wavelengths, and analyzes the intensity of the plurality of interference images to compute the thickness information of the bonding layer. | 11-13-2014 |