| Patent application number | Description | Published |
|---|
| 20090055782 | Secure Yield-aware Design Flow with Annotated Design Libraries - A method for designing and manufacturing integrated circuits is provided. The method includes providing a modeling parameter set for manufacturing an integrated circuit; dividing the modeling parameter set into time-dependent data and time-independent data; saving substantially all time-independent data into a design library; and saving substantially all time-dependent data into a design-for-manufacturing (DFM) data kit, wherein the DFM data kit is external to the design library. | 02-26-2009 |
| 20090172617 | Advisory System for Verifying Sensitive Circuits in Chip-Design - A verification system for verifying an integrated circuit design is provided. The verification system includes a functional block finding module configured to identify potential sensitive circuits in the integrated circuit design; and a search module. The search module is configured to find sensitive circuits from the potential sensitive circuits; and verify the sensitive circuits. | 07-02-2009 |
| 20090222785 | METHOD FOR SHAPE AND TIMING EQUIVALENT DIMENSION EXTRACTION - An integrated circuit (IC) design method includes providing an IC layout contour based on an IC design layout of an IC device and IC manufacturing data; generating an effective rectangle layout to represent the IC layout contour; and simulating the IC device using the effective rectangular layout. | 09-03-2009 |
| 20100095253 | TABLE-BASED DFM FOR ACCURATE POST-LAYOUT ANALYSIS - Disclosed is a system and method for integrated circuit designs and post layout analysis. The integrated circuit design method includes providing a plurality of IC devices with various design dimensions; collecting electrical performance data of the IC devices; extracting equivalent dimensions of the IC devices; generating a shape related model to relate the equivalent dimensions to the electrical performance data of the IC devices; and creating a data refinement table using the equivalent dimensions and the electrical performance data. | 04-15-2010 |
| 20100196803 | Methods for Cell Boundary Isolation in Double Patterning Design - A method of designing a double patterning mask set for a layout of a chip includes designing standard cells. In each of the standard cells, all left-boundary patterns are assigned with one of a first indicator and a second indicator, and all right-boundary patterns are assigned with an additional one of the first indicator and the second indicator. The method further includes placing the standard cells in a row of the layout of the chip. Starting from one of the standard cells in the row, indicator changes to the standard cells are propagated throughout the row. All patterns in the standard cells having the first indicator are transferred to a first mask of the double patterning mask set. All patterns in the standard cells having the second indicator are transferred to a second mask of the double patterning mask set. | 08-05-2010 |
| 20100199238 | Systematic Method for Variable Layout Shrink - A method for integrated circuit design includes providing a layout of an integrated circuit; determining key parameters of the integrated circuit; determining target values of the key parameters; and performing a first shrinkage of the layout using a first shrink percentage to generate a shrunk layout. The shrunk layout is evaluated by generating values of the key parameters from the shrunk layout. A portion of the values of the key parameters failing to meet respective ones of the target values is found. Guidelines for tuning manufacturing processes of the shrunk layout are provided, so that the portion of the values of the key parameters can meet the respective ones of the target values. | 08-05-2010 |
| 20100199253 | Routing Method for Double Patterning Design - A method of designing a double patterning mask set includes dividing a chip into a grid comprising grid cells; and laying out a metal layer of the chip. In substantially each of the grid cells, all left-boundary patterns of the metal layer are assigned with a first one of a first indicator and a second indicator, and all right-boundary patterns of the metal layer are assigned with a second one of the first indicator and the second indicator. Starting from one of the grid cells in a row, indicator changes are propagated throughout the row. All patterns in the grid cells are transferred to the double patterning mask set, with all patterns assigned with the first indicator transferred to a first mask of the double patterning mask set, and all patterns assigned with the second indicator transferred to a second mask of the double patterning mask set. | 08-05-2010 |
| 20100205577 | Design Methods for E-Beam Direct Write Lithography - A method of forming integrated circuits for a wafer includes providing an E-Beam direct write (EBDW) system. A grid is generated for the wafer, wherein the grid includes grid lines. An integrated circuit is laid out for the wafer, wherein substantially no sensitive features in the integrated circuit cross the grid lines of the grid. An EBDW is performed on the wafer using the EBDW system. | 08-12-2010 |
| 20100281446 | Integrated Circuit Design using DFM-Enhanced Architecture - Integrated circuit libraries include a first standard cell having a first left boundary and a first right boundary, and a second standard cell having a second left boundary and a second right boundary. The first standard cell and the second standard cell are of a same cell variant. A first active region in the first standard cell has a different length of diffusion than a second active region in the second standard cell. The first active region and the second active region are corresponding active regions represented by a same component of a same circuit diagram representing both the first standard cell and the second standard cell. | 11-04-2010 |
| 20110023002 | DOUBLE PATTERNING FRIENDLY LITHOGRAPHY METHOD AND SYSTEM - A method includes receiving an identification of a plurality of cells to be included in an integrated circuit (IC) layout, including a list of pairs of cells within the plurality of cells to be connected to each other. First routing paths are identified, to connect a maximum number of the pairs of cells using one-dimensional (1-D) routing between cells within those pairs of cells. Second routing paths are selected from a predetermined set of two-dimensional (2-D) routing patterns to connect any of the pairs of cells which cannot be connected by 1-D routing. The first and second routing paths are output to a machine readable storage medium to be read by a control system for controlling a semiconductor fabrication process to fabricate the IC. | 01-27-2011 |
| 20110035717 | Design Optimization for Circuit Migration - An embodiment of the present invention is a computer program product for providing an adjusted electronic representation of an integrated circuit layout. The computer program product has a medium with a computer program embodied thereon. Further, the computer program comprises computer program code for providing full node cells from a full node netlist, computer program code for scaling the full node cells to provide shrink node cells, computer program code for providing a timing performance of the full node cells and the shrink node cells, computer program code for comparing the timing performance of the full node cells to the timing performance of the shrink node cells, and computer program code for providing a first netlist. | 02-10-2011 |
| 20110072405 | Chip-Level ECO Shrink - In a method of forming an integrated circuit, a layout of a chip representation including a first intellectual property (IP) is provided. Cut lines that overlap, and extend out from, edges of the first IP, are generated. The cut lines divide the chip representation into a plurality of circuit regions. The plurality of circuit regions are shifted outward with relative to a position of the first IP to generate a space. The first IP is blown out into the space to generate a blown IP. A direct shrink is then performed. | 03-24-2011 |
| 20110119648 | ROUTING SYSTEM AND METHOD FOR DOUBLE PATTERNING TECHNOLOGY - A method includes receiving an identification of a plurality of circuit components to be included in an IC layout. Data are generated representing a first pattern to connect two of the circuit components. The first pattern has a plurality of segments. At least two of the segments have lengthwise directions perpendicular to each other. At least one pattern-free region is reserved adjacent to at least one of the at least two segments. Data are generated representing one or more additional patterns near the first pattern. None of the additional patterns is formed in the pattern-free region. The first pattern and the additional patterns form a double-patterning compliant set of patterns. The double-patterning compliant set of patterns are output to a machine readable storage medium to be read by a system for controlling a process to fabricate a pair of masks for patterning a semiconductor substrate using double patterning technology. | 05-19-2011 |
| 20110193234 | Methods for Double-Patterning-Compliant Standard Cell Design - A semiconductor chip includes a row of cells, with each of the cells including a VDD line and a VSS line. All VDD lines of the cells are connected as a single VDD line, and all VSS lines of the cells are connected as a single VSS line. No double-patterning full trace having an even number of G0 paths exists in the row of cells, or no double-patterning full trace having an odd number of G0 paths exists in the row of cells. | 08-11-2011 |
| 20110289466 | Table-Based DFM for Accurate Post-Layout Analysis - Disclosed is a system and method for integrated circuit designs and post layout analysis. The integrated circuit design method includes providing a plurality of IC devices with various design dimensions; collecting electrical performance data of the IC devices; extracting equivalent dimensions of the IC devices; generating a shape related model to relate the equivalent dimensions to the electrical performance data of the IC devices; and creating a data refinement table using the equivalent dimensions and the electrical performance data. | 11-24-2011 |
| 20120210279 | DECOMPOSITION AND MARKING OF SEMICONDUCTOR DEVICE DESIGN LAYOUT IN DOUBLE PATTERNING LITHOGRAPHY - Provided is a system and method for assessing a design layout for a semiconductor device level and for determining and designating different features of the design layout to be formed by different photomasks by decomposing the design layout. The features are designated by markings that associate the various device features with the multiple photomasks upon which they will be formed and then produced on a semiconductor device level using double patterning lithography, DPL, techniques. The markings are done at the device level and are included on the electronic file provided by the design house to the photomask foundry. In addition to overlay and critical dimension considerations for the design layout being decomposed, various other device criteria, design criteria processing criteria and their interrelation are taken into account, as well as device environment and the other device layers, when determining and marking the various device features. | 08-16-2012 |
| 20120226479 | Method of Generating RC Technology File - A method of generating resistance-capacitance (RC) technology files is disclosed. The method comprises receiving a plurality of metal schemes from an IC foundry and dividing the plurality of metal schemes into one or more modular RC groups. The method further comprises identifying a modular RC structure; calculating capacitance values of the modular RC structure by means of a field solver; calculating an equivalent dielectric constant and an equivalent height of the RC structure based upon a variety of interconnect layers not having interconnects; calculating an equivalent dielectric constant and an equivalent height for each of the plurality of metal schemes; and deriving capacitance values of each of the plurality of metal schemes from the capacitance values of the modular RC structure. | 09-06-2012 |
| 20120254811 | SYSTEMS AND METHODS FOR CREATING FREQUENCY-DEPENDENT RC EXTRACTION NETLIST - A method includes approximating a physical characteristic of a semiconductor substrate with a frequency-dependent circuit, and creating a technology file for the semiconductor substrate based on the frequency-dependent circuit. The physical characteristic of the semiconductor substrate identified by one of an electromagnetic simulation or a silicon measurement. The technology file is adapted for use by an electronic design automation tool to create a netlist for the semiconductor substrate and is stored in a non-transient computer readable storage medium. | 10-04-2012 |
| 20120256271 | Method and Apparatus for Modeling Multi-terminal MOS Device for LVS and PDK - An apparatus comprises two n-type metal oxide semiconductor (MOS) devices formed next to each other. Each n-type MOS device further includes a pair of face-to-face diodes formed in an isolation ring. A method of modeling the apparatus comprises reusing four-terminal MOS device models in standard cell libraries and combining the four-terminal MOS device model and the isolation ring model into a 4T MOS plus isolation ring model. The method of modeling the apparatus further comprises adding a dummy device between a body contact of the first n-type MOS device and a body contact of the second n-type MOS device. | 10-11-2012 |
| 20120288786 | RC EXTRACTION FOR SINGLE PATTERNING SPACER TECHNIQUE - A method includes performing a place and route operation using an electronic design automation tool to generate a preliminary layout for a photomask to be used to form a circuit pattern of a semiconductor device. The place and route operation is constrained by a plurality of single patterning spacer technique (SPST) routing rules. Dummy conductive fill patterns are emulated within the EDA tool using an RC extraction tool to predict locations and sizes of dummy conductive fill patterns to be added to the preliminary layout of the photomask. An RC timing analysis of the circuit pattern is performed within the EDA tool, based on the preliminary layout and the emulated dummy conductive fill patterns. | 11-15-2012 |
| 20130014070 | SYSTEMS AND METHODS FOR CREATING FREQUENCY-DEPENDENT NETLIST - A method includes creating a technology file including data for an integrated circuit including at least one die coupled to an interposer and a routing between the at least one die and the interposer, b) creating a netlist including data approximating at least one of capacitive or inductive couplings between conductors in the at least one die and in the interposer based on the technology file, c) simulating a performance of the integrated circuit based on the netlist, d) adjusting the routing between the at least one die and the interposer based on the simulation to reduce the at least one of the capacitive or the inductive couplings, and e) repeating steps c) and d) to optimize the at least one of the capacitive or inductive couplings. | 01-10-2013 |
| 20130061186 | MULTI-PATTERNING METHOD - A method includes receiving data representing a layout of a DPT-layer of an integrated circuit generated by a place and route tool. The layout includes a plurality of polygons to be formed in the DPT-layer by a multi-patterning process. First and second ones of the plurality of polygons to be formed using first and second photomasks, respectively are identified. Any intervening polygons along a first path connecting the first polygon to the second polygon, and separator regions between adjacent polygons along the first path are identified. The separator regions have sizes less than a minimum threshold distance between polygons formed on the first photomask. The separator regions are counted. A multi-patterning conflict is identified, if the count of separator regions is even, prior to assigning all remaining ones of the plurality of polygons to the first or second masks. | 03-07-2013 |
| 20130074018 | MULTI-PATTERNING METHOD - A method comprises (a) receiving data representing a layout of a DPT-layer of an integrated circuit generated by a place and route tool, the layout including a plurality of polygons to be formed in the DPT-layer by a multi-patterning process; (b) receiving at least one identification of a subset of the plurality of polygons that are to be formed in the DPT-layer using the same photomask as each other; (c) constructing a graph of the subset of the plurality of polygons and any intervening polygons of the plurality of polygons, where the subset of the plurality of polygons are represented in the graph by a single node, the graph including connections connecting adjacent ones of the polygons in the graph that are positioned within a threshold distance of each other; and (d) identifying a multi-patterning conflict if any subset of the connections form an odd loop. | 03-21-2013 |
| 20130091476 | METHOD AND SYSTEM FOR REPLACING A PATTERN IN A LAYOUT - A received layout identifies a plurality of circuit components to be included in an integrated circuit (IC) layer for double patterning the layer using two photomasks, the layout including a plurality of first patterns to be included in the first photomask and at least one second pattern to be included in the second photomask. A selected one of the first patterns has first and second endpoints, to be replaced by a replacement pattern connecting the first endpoint to a third endpoint. At least one respective keep-out region is provided adjacent to each respective remaining first pattern except for the selected first pattern. Data are generated representing the replacement pattern, such that no part of the replacement pattern is formed in any of the keep-out regions. Data representing the remaining first patterns and the replacement pattern are output. | 04-11-2013 |
| 20130174112 | METHOD OF GENERATING A BIAS-ADJUSTED LAYOUT DESIGN OF A CONDUCTIVE FEATURE AND METHOD OF GENERATING A SIMULATION MODEL OF A PREDEFINED FABRICATION PROCESS - A method of generating a bias-adjusted layout design of a conductive feature includes receiving a layout design of the conductive feature. If a geometry configuration of the layout design is within a first set of predetermined criteria, the bias-adjusted layout design of the conductive feature is generated according to a first layout bias rule. If the geometry configuration of the layout design is within a second set of predetermined criteria, the bias-adjusted layout design of the conductive feature is generated according to a second layout bias rule. | 07-04-2013 |
| 20130191796 | INTEGRATED CIRCUIT LAYOUT MODIFICATION - Methods are disclosed of modifying an integrated circuit (IC) design that utilizes multiple patterning technology (MPT). The methods include configuring a first layout of an integrated circuit, having at least one layer with features to be formed utilizing fabrication by at least two masks. The at least one layer includes a plurality of active cells and a plurality of spare cells. A second layout is configured to re-route the spare cells and active cells, wherein the re-routing utilizes at least a portion of the plurality of spare cells. Fewer than all of the at least two masks are replaced to configure the second layout. | 07-25-2013 |
| 20130205266 | COLORING/GROUPING PATTERNS FOR MULTI-PATTERNING - A method comprises: accessing a persistent, machine readable storage medium containing data representing an integrated circuit (IC) design to be fabricated using multi-patterning; identifying at least one network of conductive patterns configured to transmit signals that substantially impact timing of at least one circuit in the IC; pre-grouping the at least one network of conductive patterns in a first group; and electronically providing data to an electronic design automation (EDA) tool to cause inclusion in a first single photomask of all portions of the patterns within the first group that are to be formed in a single layer of the IC, wherein the single layer is to be multi-patterned using at least two photomasks. | 08-08-2013 |
| 20130227501 | SEMICONDUCTOR DEVICE DESIGN METHOD, SYSTEM AND COMPUTER-READABLE MEDIUM - In a semiconductor device design method performed by at least one processor, first and second electrical components are extracted from a layout of a semiconductor device. The semiconductor device has a semiconductor substrate and the first and second electrical components in the semiconductor substrate. Parasitic parameters of a coupling in the semiconductor substrate between the first and second electrical components are extracted using a first tool. Intrinsic parameters of the first and second electrical components are extracted using a second tool different from the first tool. The extracted parasitic parameters and intrinsic parameters are combined into a model of the semiconductor device. The parasitic parameters of the coupling are extracted based on a model of the coupling included in the second tool. | 08-29-2013 |
| 20130227514 | Method of Generating RC Technology File - A method of generating resistance-capacitance (RC) technology files is disclosed. The method comprises receiving a plurality of metal schemes from an IC foundry and dividing the plurality of metal schemes into one or more modular RC groups. The method further comprises identifying a modular RC structure; calculating capacitance values of the modular RC structure by means of a field solver; calculating an equivalent dielectric constant and an equivalent height of the RC structure based upon a variety of interconnect layers not having interconnects; calculating an equivalent dielectric constant and an equivalent height for each of the plurality of metal schemes; and deriving capacitance values of each of the plurality of metal schemes from the capacitance values of the modular RC structure. | 08-29-2013 |
| 20130239070 | RC EXTRACTION FOR SINGLE PATTERNING SPACER TECHNIQUE - A method includes performing a place and route operation using an electronic design automation tool to generate a preliminary layout for a photomask to be used to form a circuit pattern of a semiconductor device. The place and route operation is constrained by a plurality of single patterning spacer technique (SPST) routing rules. Dummy conductive fill patterns are emulated within the EDA tool using an RC extraction tool to predict locations and sizes of dummy conductive fill patterns to be added to the preliminary layout of the photomask. An RC timing analysis of the circuit pattern is performed within the EDA tool, based on the preliminary layout and the emulated dummy conductive fill patterns. | 09-12-2013 |
| 20130246986 | METHOD OF CIRCUIT DESIGN YIELD ANALYSIS - A method includes (a) generating a set of samples, each sample representing a respective set of semiconductor fabrication process variation values; (b) selecting a first subset of the set of samples based on a probability of the set of semiconductor fabrication process variation values corresponding to each sample; (c) estimating a yield measure for a semiconductor product based on relative sizes of the set of samples and the first subset, without performing a Monte Carlo simulation; and (d) outputting an indication that a design modification is appropriate, if the estimated yield measure is below a specification yield value. | 09-19-2013 |
| 20130254726 | MULTI-PATTERNING METHOD - A method includes receiving data representing a layout of a DPT-layer of an integrated circuit generated by a place and route tool. The layout includes a plurality of polygons to be formed in the DPT-layer by a multi-patterning process. First and second ones of the plurality of polygons to be formed using first and second photomasks, respectively are identified. Any intervening polygons along a first path connecting the first polygon to the second polygon, and separator regions between adjacent polygons along the first path are identified. The separator regions have sizes less than a minimum threshold distance between polygons formed on the first photomask. The separator regions are counted. A multi-patterning conflict is identified, if the count of separator regions is even, prior to assigning all remaining ones of the plurality of polygons to the first or second masks. | 09-26-2013 |
| 20130275927 | RC Corner Solutions for Double Patterning Technology - A method includes determining model parameters for forming an integrated circuit, and generating a techfile using the model parameters. The techfile includes at least two of a C_worst table, a C_best table, and a C_nominal table. The C_worst table stores greatest parasitic capacitances between layout patterns of the integrated circuit when lithography masks comprising the layout patterns shift relative to each other. The C_best table stores smallest parasitic capacitances between the layout patterns when the lithography masks shift relative to each other. The C_nominal table stores nominal parasitic capacitances between the layout patterns when the lithography masks do not shift relative to each other. The techfile is embodied on a tangible non-transitory storage medium. | 10-17-2013 |
| 20130290916 | SYSTEM AND METHOD FOR REDUCING LAYOUT-DEPENDENT EFFECTS - A method includes extracting a first netlist from a first layout of a semiconductor circuit and estimating layout-dependent effect data based on the first netlist. A first simulation of the semiconductor circuit is performed based on the first netlist using an electronic design automation tool, and a second simulation of the semiconductor circuit is performed based on a circuit schematic using the electronic design automation tool. A weight and a sensitivity of the at least one layout-dependent effect are calculated, and the first layout of the semiconductor circuit is adjusted based on the weight and the sensitivity to provide a second layout of the semiconductor circuit. The second layout is stored in a non-transient storage medium. | 10-31-2013 |
| 20140007028 | DISCRETE DEVICE MODELING | 01-02-2014 |
| 20140013292 | STATIC TIMING ANALYSIS METHOD AND SYSTEM CONSIDERING CAPACITIVE COUPLING AND DOUBLE PATTERNING MASK MISALIGNMENT - A method for analyzing an IC design, comprises: using a computer implemented electronic design automation tool to perform a parasitic RC extraction for a layout of the IC design, the parasitic RC extraction outputting for each of a plurality of routing paths, a nominal capacitive coupling, a minimum capacitive coupling and a maximum capacitive coupling, where the minimum and maximum capacitive couplings correspond to circuit patterning in the presence of double patterning mask misalignments; and performing one of a setup time analysis or a hold time analysis of the IC design using a computer implemented static timing analysis tool. For a given flip-flop having a launch path and a capture path, the setup or hold time analyses is performed using the minimum capacitive coupling for one of the launch and capture paths and the maximum capacitive coupling for the other of the launch and capture paths. | 01-09-2014 |
| 20140059504 | METHOD AND SYSTEM FOR REPLACING A PATTERN IN A LAYOUT - A received layout identifies a plurality of circuit components to be included in an integrated circuit (IC) layer for double patterning the layer using two photomasks, the layout including a plurality of first patterns to be included in the first photomask and at least one second pattern to be included in the second photomask. A selected one of the first patterns has first and second endpoints, to be replaced by a replacement pattern connecting the first endpoint to a third endpoint. At least one respective keep-out region is provided adjacent to each respective remaining first pattern except for the selected first pattern. Data are generated representing the replacement pattern, such that no part of the replacement pattern is formed in any of the keep-out regions. Data representing the remaining first patterns and the replacement pattern are output. | 02-27-2014 |
| 20140068537 | STATIC TIMING ANALYSIS METHOD AND SYSTEM CONSIDERING CAPACITIVE COUPLING AND DOUBLE PATTERNING MASK MISALIGNMENT - A method for analyzing an IC design, comprises: using a computer implemented electronic design automation tool to perform a parasitic RC extraction for a layout of the IC design, the parasitic RC extraction outputting for each of a plurality of routing paths, a nominal capacitive coupling, a minimum capacitive coupling and a maximum capacitive coupling, where the minimum and maximum capacitive couplings correspond to circuit patterning in the presence of double patterning mask misalignments; and performing one of a setup time analysis or a hold time analysis of the IC design using a computer implemented static timing analysis tool. For a given flip-flop having a launch path and a capture path, the setup or hold time analyses is performed using the minimum capacitive coupling for one of the launch and capture paths and the maximum capacitive coupling for the other of the launch and capture paths. | 03-06-2014 |
| 20140103545 | SEMICONDUCTOR STRUCTURE AND METHOD OF GENERATING MASKS FOR MAKING INTEGRATED CIRCUIT - A method of generating masks for making an integrated circuit includes determining if a coupling capacitance value of a conductive path of a first and second groups of conductive paths of the integrated circuit is greater than a predetermined threshold value. The determination is performed based on at least a resistance-capacitance extraction result of the conductive path and a predetermined level of mask misalignment. The layout patterns are modified to increase an overall vertical distance between the first group of conductive paths and the second group of conductive paths if the coupling capacitance value is greater than the predetermined threshold value. | 04-17-2014 |
| 20140189623 | PARASITIC COMPONENT LIBRARY AND METHOD FOR EFFICIENT CIRCUIT DESIGN AND SIMULATION USING THE SAME - A method for circuit design includes a parasitic aware library embedded with one or more parameterized cells. The parasitic aware library is used to insert nets representing some but not all parasitic effects of a circuit into a circuit schematic enabling a single circuit schematic to be used for simulation of the circuit, parasitic verification of the circuit and LVS (Layout Versus Schematic) check. Only the single circuit schematic is required for the circuit design process and to form a mask set. Critical paths of the single circuit schematic are identified and parasitic effects are extracted and inserted into the schematic, enabling a pre-estimation of parasitic verification to be carried out and the LVS check to be carried out using a circuit schematic with some parasitic effects prior to the post-layout simulation in which all parasitic components of the layout are included. | 07-03-2014 |
| 20140189635 | SEMICONDUCTOR DEVICE DESIGN METHOD, SYSTEM AND COMPUTER-READABLE MEDIUM - A semiconductor device design system comprising at least one processor is configured to define a resistance-capacitance (RC) extraction tool for determining a distance between first and second through-semiconductor-vias extracted from a layout of a semiconductor device. The semiconductor device has a semiconductor substrate and the first and second through-semiconductor-vias in the semiconductor substrate. The semiconductor device design system comprising the at least one processor is also configured to extract parasitic parameters of a coupling in the semiconductor substrate based on the distance determined by the RC extraction tool and a model of the coupling included in a simulation tool. | 07-03-2014 |
| 20140215428 | DOUBLE PATTERNING TECHNOLOGY (DPT) LAYOUT ROUTING - One or more techniques or systems for determining double patterning technology (DPT) layout routing compliance are provided herein. For example, a layout routing component of a system is configured to assign a pin loop value to a pin loop. In some embodiments, the pin loop value is assigned based on a mask assignment of a pin of the pin loop. In some embodiments, the pin loop value is assigned based on a number of nodes associated with the pin loop. DPT compliance or a DPT violation is determined for the pin loop based on the pin loop value. In this manner, odd loop detection associated with DPT layout routing is provided because a DPT violation results in generation of an additional instance of a net, for example. Detecting an odd loop allows a design to be redesigned before fabrication, where the odd loop would present undesired issues. | 07-31-2014 |
| 20140245242 | VARIATION FACTOR ASSIGNMENT - One or more embodiments of techniques or systems for variation factor assignment for a device are provided herein. In some embodiments, a peripheral environment is determined for a device. A peripheral environment is a layout structure or an instance. When the peripheral environment is the layout structure, a variation factor is assigned to the device based on an architecture associated with the layout structure. When the peripheral environment is the instance, the variation factor is assigned to the device based on a bounding window created for the instance. In this manner, variation factor assignment is provided, such that a first device within a first block of a die has a different variation factor than a second device within a second block of the die, thus giving finer granularity to variation factor assignments. | 08-28-2014 |
| 20140245251 | Design Optimization for Circuit Migration - An embodiment of the present invention is a computer program product for providing an adjusted electronic representation of an integrated circuit layout. The computer program product has a medium with a computer program embodied thereon. Further, the computer program comprises computer program code for providing full node cells from a full node netlist, computer program code for scaling the full node cells to provide shrink node cells, computer program code for providing a timing performance of the full node cells and the shrink node cells, computer program code for comparing the timing performance of the full node cells to the timing performance of the shrink node cells, and computer program code for providing a first netlist. | 08-28-2014 |
| 20140258962 | Parasitic Capacitance Extraction for FinFETs - A method includes generating a three-dimensional table. The table cells of the three-dimensional table comprise normalized parasitic capacitance values selected from the group consisting essentially of normalized poly-to-fin parasitic capacitance values and normalized poly-to-metal-contact parasitic capacitance values of Fin Field-Effect Transistors (FinFETs). The three-dimensional table is indexed by poly-to-metal-contact spacings of the FinFETs, fin-to-fin spacings of the FinFETs, and metal-contact-to-second-poly spacings of the FinFETs. The step of generating the three-dimensional table is performed using a computer. | 09-11-2014 |
| 20140282308 | METHOD OF RADIO-FREQUENCY AND MICROWAVE DEVICE GENERATION - The present disclosure relates to an apparatus and method to generate a device library, along with layout versus schematic (LVS) and parasitic extraction set-up files for connecting with official tools of a design window supported by a process design kit (PDK). The device library comprises passive devices which can be utilized at any point in an end-to-end design flow from pre-layout verification to post-layout verification of an integrated circuit design. The device library allows for a single schematic view for pre-layout verification but also post-layout verification, thus allowing for pole or pin comparison, and prevents double-counting of parasitic effects from passive design elements by directly instantiating a device from the device library for a verification step. An LVS and parasitic extraction graphical user interface (GUI) allows for incorporation of the generated device library into a pre-existing PDK without any modification to the PDK. Other devices and methods are also disclosed. | 09-18-2014 |
| 20140298284 | STANDARD CELL DESIGN LAYOUT - Among other things, one or more techniques and/or systems for performing design layout are provided. In an example, a design layout corresponds to a layout of a standard cell whose connectivity is described by a netlist. For example, the netlist specifies net types for respective vias of the standard cell. One or more connectivity rings are formed within the design layout to provide connectivity for one or more vias of the design layout. For example, a first connectivity ring is generated, such as from mandrel, to connect one or more ring one vias. A second connectivity ring is generated, such as from passive pattern, to connect one or more ring two vias. One or more cuts are generated within the design layout to isolate vias having different net types. In this way, the design layout is self-aligned double patterning (SADP) compliant. | 10-02-2014 |
| 20140304670 | RC Corner Solutions for Double Patterning Technology - A method includes selecting a process corner, determining model parameters for forming an integrated circuit, and generating a file using the model parameters for the process corner. The generating the file is performed using a computer. The file includes at least two of a first capacitance table, a second capacitance table, and a third capacitance table. The first capacitance table stores greatest parasitic capacitances between layout patterns of the integrated circuit when lithography masks including the layout patterns shift relative to each other. The second capacitance table stores smallest parasitic capacitances between the layout patterns when the lithography masks shift relative to each other. The third capacitance table stores nominal parasitic capacitances between the layout patterns when the lithography masks do not shift relative to each other. | 10-09-2014 |
| 20150052493 | METHOD OF GENERATING A SIMULATION MODEL OF A PREDEFINED FABRICATION PROCESS - A method of generating a simulation model of a predefined fabrication process according to a sample conductive feature includes receiving a geometry configuration and layout design of the conductive feature. A circuit-level simulation model of the sample conductive feature based on the geometry configuration of the sample conductive feature is generated. A hardware processor converts the circuit-level simulation model of the sample conductive feature into at least a first layout bias rule corresponding to a first set of predetermined criteria of the layout design and a second layout bias rule, different from the first layout bias rule, corresponding to a second set of predetermined criteria of the layout design. | 02-19-2015 |
| 20150060039 | STRUCTURE AND METHOD FOR COOLING THREE-DIMENSIONAL INTEGRATED CIRCUITS - A structure and method for cooling a three-dimensional integrated circuit (3DIC) are provided. A cooling element is configured for thermal connection to the 3DIC. The cooling element includes a plurality of individually controllable cooling modules disposed at a first plurality of locations relative to the 3DIC. Each of the cooling modules includes a cold pole and a heat sink. The cold pole is configured to absorb heat from the 3DIC. The heat sink is configured to dissipate the heat absorbed by the cold pole and is coupled to the cold pole via an N-type semiconductor element and via a P-type semiconductor element. A temperature sensing element includes a plurality of thermal monitoring elements disposed at a second plurality of locations relative to the 3DIC for measuring temperatures at the second plurality of locations. The measured temperatures control the plurality of cooling modules. | 03-05-2015 |
| 20150074629 | PARASITIC COMPONENT LIBRARY AND METHOD FOR EFFICIENT CIRCUIT DESIGN AND SIMULATION USING THE SAME - A method for circuit design includes a parasitic aware library embedded with one or more parameterized cells. The parasitic aware library is used to insert nets representing some but not all parasitic effects of a circuit into a circuit schematic enabling a single circuit schematic to be used for simulation of the circuit, parasitic verification of the circuit and LVS (Layout Versus Schematic) check. Only the single circuit schematic is required for the circuit design process and to form a mask set. Critical paths of the single circuit schematic are identified and parasitic effects are extracted and inserted into the schematic, enabling a pre-estimation of parasitic verification to be carried out and the LVS check to be carried out using a circuit schematic with some parasitic effects prior to the post-layout simulation in which all parasitic components of the layout are included. | 03-12-2015 |
