Patent application number | Description | Published |
20100153344 | INFORMATION EXTRACTION METHOD, EXTRACTOR REBUILDING METHOD, AND SYSTEM AND COMPUTER PROGRAM PRODUCT THEREOF - An information extraction method for extracting dynamic information is provided. The method includes using a plurality of information extractors extracting reference values corresponding to the dynamic information from a plurality of information sources, and determining a most reliable value corresponding to the dynamic information based on the reference values. The method further includes determining whether each of the information extractors is abnormal according to the most reliable value and removing the information extractors determined as abnormal. The method further includes rebuilding new information extractors for replacing the removed information extractors. In such a way, reliable dynamic information can be extracted and the information extractors can be maintained for normal operation. | 06-17-2010 |
20100153355 | INFORMATION EXTRACTION METHOD, EXTRACTOR REBUILDING METHOD, AND SYSTEM AND COMPUTER PROGRAM PRODUCT THEREOF - An information extraction method for extracting dynamic information is provided. The method includes using a plurality of information extractors extracting reference values corresponding to the dynamic information from a plurality of information sources, and determining a most reliable value corresponding to the dynamic information based on the reference values. The method further includes determining whether each of the information extractors is abnormal according to the most reliable value and removing the information extractors determined as abnormal. The method further includes rebuilding new information extractors for replacing the removed information extractors. In such a way, reliable dynamic information can be extracted and the information extractors can be maintained for normal operation. | 06-17-2010 |
20100247773 | ALLOY SUSCEPTOR WITH IMPROVED PROPERTIES FOR FILM DEPOSITION - Provided is a method for processing a wafer that includes providing an alloy susceptor including an exterior surface and a wafer contact surface. The exterior surface of the alloy susceptor is treated to produce a roughness of the exterior surface. The roughened exterior surface of is coated with a ceramic material. The alloy susceptor including the ceramic-coated roughened exterior surface is positioned in a wafer process chamber. A plurality of layers of a film are deposited on the ceramic-coated roughened exterior surface of the alloy susceptor, wherein a first adhesion exists between the plurality of layers of the film and the ceramic material coated on the roughened exterior surface of the alloy susceptor that is greater than a second adhesion that would exist between the plurality of layers of the film and a non-roughened exterior surface of the alloy susceptor without the ceramic material. | 09-30-2010 |
20130064973 | Chamber Conditioning Method - A system and method for conditioning a chamber is disclosed. An embodiment comprises utilizing the deposition chamber to deposit a first layer and conditioning the deposition chamber. The conditioning the deposition chamber can be performed by depositing a heterogeneous material over the first layer. The heterogeneous material can cover and encapsulate the first layer, thereby preventing particles of the first layer from breaking off and potentially landing on a substrate during a subsequent processing run. | 03-14-2013 |
20130088053 | FOLDABLE FRAME STRUCTURE - A pitman-style foldable frame structure has an innovative and unique assembled design. The frame structure includes foldable panels, a central spindle, lateral frames, oblique connecting rods, a control device, and a central connecting frame. The frame structure offers improvement over the prior art in lowering the material cost and increasing structural support strength and rigidity of the pitman-style foldable frame and achieves practical advancement and better industrial utilization effect. | 04-11-2013 |
20130089934 | Material Delivery System and Method - A system and method for controlling saturated vapor pressure of a precursor material is provided. An embodiment comprises generating a calibration curve and utilizing the calibration curve to control a temperature of the precursor material in order to control its saturated vapor pressure. Alternatively, the calibration curve may be substituted for a real time sensor which can take readings in real time and adjust the temperature and saturated vapor pressure based upon the real time readings. | 04-11-2013 |
20150099315 | MECHANISMS FOR MONITORING IMPURITY IN HIGH-K DIELECTRIC FILM - Embodiments of mechanisms of monitoring metal impurity in a high-k dielectric film are provided. The method includes forming an interfacial layer over a substrate. The method also includes forming a high-k dielectric film on the interfacial layer, and the interfacial layer and the high-k dielectric film form a stacked structure over the substrate. The method further includes conducting the first thickness measurement on the stacked structure. In addition, the method includes performing a treatment to the stacked structure after the first thickness measurement, and the treatment includes an annealing process. The method also includes conducting the second thickness measurement on the stacked structure after the treatment. | 04-09-2015 |
20150129131 | SEMICONDUCTOR PROCESSING APPARATUS AND PRE-CLEAN SYSTEM - A semiconductor processing apparatus includes an electromagnetic generator, an analog signal module, and an electromagnetic shield. The electromagnetic generator is capable of generating an electromagnetic field. The analog signal module is located adjacent to the electromagnetic generator and capable of generating an analog signal. The electromagnetic shield is capable of shielding the analog signal module. The electromagnetic shield includes a plurality of covering plates. Each of the covering plates and the analog signal module are apart from at least a predetermined distance. | 05-14-2015 |
20150129414 | PROCESS KIT OF PHYSICAL VAPOR DEPOSITION CHAMBER AND FABRICATING METHOD THEREOF - A physical vapor deposition (PVD) chamber, a process kit of a PVD chamber and a method of fabricating a process kit of a PVD chamber are provided. In various embodiments, the PVD chamber includes a sputtering target, a power supply, a process kit, and a substrate support. The sputtering target has a sputtering surface that is in contact with a process region. The power supply is electrically connected to the sputtering target. The process kit has an inner surface at least partially enclosing the process region, and a liner layer disposed on the inner surface. The substrate support has a substrate receiving surface, wherein the liner layer disposed on the inner surface of the process kit has a surface roughness (Rz), and the surface roughness (Rz) is substantially in a range of 50-200 μm. | 05-14-2015 |