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| 20110086288 | FUEL CELL STRUCTURE WITH POROUS METAL PLATE - A fuel cell structure with a porous metal plate includes a membrane electrode assembly (MEA), a first porous metal plate, a metal plate, and a pair of end plates. The first porous metal plate and the metal plate are disposed on opposite outer surfaces of two gas diffusion layers (GDLs) of the MEA, respectively, and have fuel channels contacting with the GDLs. The end plates are arranged on outer surfaces of the first porous metal plate and of the metal plate, respectively, to close cooling-liquid flow channels of the first porous metal plate and of the metal plate. A pressure difference between fuel and cooling liquid within the fuel cell structure pushes the cooling liquid flowing through the cooling-liquid flow channels of the first porous metal plate to seep into the fuel channels spontaneously and hence humidify the fuel automatically, thereby maintaining the reaction efficiency of the fuel cell structure. | 04-14-2011 |
| 20110200906 | PARALLEL FUEL CELL ELECTRICAL POWER SYSTEM - A parallel fuel cell electrical power system is provided. The parallel fuel cell electrical power system includes a plurality of fuel cell electrical power modules and a direct-current bus (DC bus). Each of the fuel cell electrical power modules has a fuel-cell stack, a current switch, and a reverse current protection element. The DC bus electrically connects the output end of the plurality of fuel cell electrical power modules and makes one fuel cell electrical power module electrically connect to another fuel cell electrical power module in parallel, such that the fuel-cell stacks with a fixed power capacity are combined to effectively output a variety of voltages for a load. | 08-18-2011 |
| 20110250517 | GASEOUS FUEL SUPPLY SYSTEM FOR A FUEL CELL - The present invention discloses a gaseous fuel supply system for a fuel cell. The gaseous fuel supply system includes a first valve, a filter element, at least one pressure adjusting element, a first pipeline, a second valve, a flow rate detector, and a check valve. The first valve makes connection to a gaseous fuel supply source, and the filter element makes connection to the outlet of the first valve. The pressure adjusting element controls the gas pressure of fuel gas. The first pipeline makes connection between the pressure adjusting element and the second valve. The flow rate detector and the check valve are made connection sequentially after the second valve. In virtue of the plural detectors used in the gaseous fuel supply source, once an abnormal phenomenon is detected, the first valve and the second valve will be turned off by a control unit to enhance the safety of the fuel cell. | 10-13-2011 |
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| 20110053351 | Solar Cell Defect Passivation Method - The present disclosure passivates solar cell defects. Plasma immersion ion implantation (PIII) is used to repair the defects during or after making the solar cell. Hydrogen ion is implanted into absorption layer with different sums of energy to fill gaps of defects or surface recombination centers. Thus, solar cell defects are diminished and carriers are transferred with improved photovoltaic conversion efficiency. | 03-03-2011 |
| 20130089943 | METHOD OF MANUFACTURING A SOLAR CELL - An embodiment of the present disclosure provides method of manufacturing a solar cell. The method comprises the steps of providing a silicon substrate, forming a P-N junction structure in the silicon substrate, forming an oxide layer for passivating the surface defect of the substrate that has a low reflectivity for AM1.5G solar spectrum, and forming a plurality of metal electrodes on the silicon substrate. | 04-11-2013 |
| 20130314884 | ASSEMBLING METHOD OF DISPLAY DEVICE AND DISPLAY DEVICE - An assembling method of a display device and a display device are provided. The assembling method of the display device includes following steps: providing a first frame, wherein a first display module is disposed at the first frame; providing a bracket, wherein the bracket includes a positioning structure and a second display module is disposed at the bracket; and assembling the bracket and the first frame together via the positioning structure, so that the first display module and the second display module are partly overlapped. | 11-28-2013 |
| 20140042500 | CONTACT STRUCTURE OF SEMICONDUCTOR DEVICE - The disclosure relates to a semiconductor device. An exemplary structure for a contact structure for a semiconductor device comprises a substrate comprising a major surface and a cavity below the major surface; a strained material in the cavity, wherein a lattice constant of the strained material is different from a lattice constant of the substrate; a Ge-containing dielectric layer over the strained material; and a metal layer over the Ge-containing dielectric layer. | 02-13-2014 |
| 20140183633 | Semiconductor Devices and Methods of Manufacture Thereof - Semiconductor devices and methods of manufacture thereof are disclosed. In some embodiments, a method of manufacturing a semiconductor device includes partially manufacturing a fin field effect transistor (FinFET) including a semiconductor fin comprising a first semiconductive material and a second semiconductive material disposed over the first semiconductive material. A top portion of the second semiconductive material of the semiconductor fin is removed, and a top portion of the first semiconductive material is exposed. A top portion first semiconductive material is removed from beneath the second semiconductive material. The first semiconductive material and the second semiconductive material are oxidized, forming a first oxide comprising a first thickness on the first semiconductive material and a second oxide comprising a second thickness on the second semiconductive material, the first thickness being greater than the second thickness. The second oxide is removed from the second semiconductive material, and manufacturing of the FinFET is completed. | 07-03-2014 |
| 20150028389 | SEMICONDUCTOR DEVICES COMPRISING A FIN - A semiconductor device may include a fin disposed over a workpiece. The fin may include: a first semiconductive material disposed over the workpiece; an oxide of the first semiconductive material disposed over the first semiconductive material; a second conductive material disposed over and spaced apart from the oxide of the first semiconductive material; a first insulating material disposed around and lining the second semiconductive material; a conductive material disposed around the first insulating material; and a second insulating material disposed between the oxide of the first semiconductive material and a portion of the conductive material facing the workpiece, the second insulating material further lining sidewalls of the conductive material. | 01-29-2015 |
| 20150097239 | Passivation Structure of Fin Field Effect Transistor - A FinFET comprises a substrate comprising a major surface; a fin structure protruding from the major surface comprising a lower fin portion comprising a first semiconductor material having a first lattice constant; an upper fin portion comprising a second semiconductor material having a second lattice constant greater than the first lattice constant; a middle fin portion comprising a third semiconductor material having a third lattice constant between the first lattice constant and the second lattice constant; and a passivation structure surrounding the fin structure comprising a lower passivation portion surrounding the lower fin portion comprising a first oxynitride of the first semiconductor material; an upper passivation portion surrounding the upper fin portion comprising a second oxynitride of the second semiconductor material; and a middle passivation portion surrounding the middle fin portion comprising a third oxynitride of the third semiconductor material. | 04-09-2015 |
| 20150102386 | Passivated and Faceted for Fin Field Effect Transistor - A fin field effect transistor (FinFET), and a method of forming, is provided. The FinFET has a fin having one or more semiconductor layers epitaxially grown on a substrate. A first passivation layer is formed over the fins, and isolation regions are formed between the fins. An upper portion of the fins are reshaped and a second passivation layer is formed over the reshaped portion. Thereafter, a gate structure may be formed over the fins and source/drain regions may be formed. | 04-16-2015 |
| 20150179768 | Fin Structure of Semiconductor Device - The disclosure relates to a fin field effect transistor (FinFET). An exemplary FinFET comprises a substrate comprising a major surface; a fin structure protruding from the major surface comprising an upper portion comprising a first semiconductor material having a first lattice constant, wherein the upper portion comprises a first substantially vertical portion having a first width and a second substantially vertical portion having a second width less than the first width over the first substantially vertical portion; and a lower portion comprising a second semiconductor material having a second lattice constant less than the first lattice constant, wherein a top surface of the lower portion has a third width less than the first width; and a gate structure covering the second substantially vertical portion. | 06-25-2015 |
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| 20090108757 | ONE-PIECE ORGANIC LIGHT EMITTING DIODE DISPLAY DEVICE WITH AN ENERGY-RECYCLING FEATURE AND HIGH CONTRAST - This invention is an electricity generating organic light-emitting display device (OLED) consisting of vertically stacked layers including an organic light emitting device (OLED), an insulation layer, a solar cell and thin film transistors. The device can reduce the reflection of ambient light, improve the contrast of the signal, and enhance sun-light readability by allowing the ambient light to be absorbed by the solar cells. Furthermore, additional power will be generated by the solar cell through absorption of ambient light and backward emission of OLEDs. The device, without using the polarizer, can exhibit low reflectance characteristics over the visible region and high display contrast. | 04-30-2009 |
| 20100255391 | FUEL CELL STRUCTURE HAVING COMBINED POLAR PLATES AND THE COMBINED POLAR PLATES THEREOF - A fuel cell structure having combined polar plates and the combined polar plate thereof are disclosed. The fuel cell structure includes a membrane electrode assembly, the combined polar plate, and a charge collection plate. The combined polar plate and the charge collection plate are arranged on outer surfaces of the membrane electrode assembly. The combined polar plate includes a non-porous plate and a porous plate. The non-porous plate has a base plate and a frame which together define a recess. A portion of the base plate free of the frame has at least one flow channel. The porous plate is received in the recess and sandwiched between the membrane electrode assembly and the base plate. Pores of the porous plate increase flow rate of fuel, and the flow channel drains water, a product of electrochemical reaction, from the fuel cell structure quickly to enhance performance of power generation. | 10-07-2010 |
| 20130087191 | POINT-CONTACT SOLAR CELL STRUCTURE - A point-contact solar cell structure includes a semiconductor substrate, a front electrode, a first passivation layer, a second passivation layer, and a rear electrode. The semiconductor substrate includes an upper surface, a lower surface, and an emitter layer, a base layer, and a plurality of locally doped regions located between the upper surface and the lower surface. The plurality of locally doped regions is located on the lower surface at intervals. The second passivation layer is located on the lower surface, and has a plurality of openings disposed respectively corresponding to the locally doped regions. The rear electrode is located on one side of the second passivation layer opposite to the semiconductor substrate, and passes through the second passivation layer via the openings to contact the locally doped regions. The width of at least one opening corresponding to the front electrode is greater than that of the remaining openings. | 04-11-2013 |
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| 20100153344 | INFORMATION EXTRACTION METHOD, EXTRACTOR REBUILDING METHOD, AND SYSTEM AND COMPUTER PROGRAM PRODUCT THEREOF - An information extraction method for extracting dynamic information is provided. The method includes using a plurality of information extractors extracting reference values corresponding to the dynamic information from a plurality of information sources, and determining a most reliable value corresponding to the dynamic information based on the reference values. The method further includes determining whether each of the information extractors is abnormal according to the most reliable value and removing the information extractors determined as abnormal. The method further includes rebuilding new information extractors for replacing the removed information extractors. In such a way, reliable dynamic information can be extracted and the information extractors can be maintained for normal operation. | 06-17-2010 |
| 20100153355 | INFORMATION EXTRACTION METHOD, EXTRACTOR REBUILDING METHOD, AND SYSTEM AND COMPUTER PROGRAM PRODUCT THEREOF - An information extraction method for extracting dynamic information is provided. The method includes using a plurality of information extractors extracting reference values corresponding to the dynamic information from a plurality of information sources, and determining a most reliable value corresponding to the dynamic information based on the reference values. The method further includes determining whether each of the information extractors is abnormal according to the most reliable value and removing the information extractors determined as abnormal. The method further includes rebuilding new information extractors for replacing the removed information extractors. In such a way, reliable dynamic information can be extracted and the information extractors can be maintained for normal operation. | 06-17-2010 |
| 20100247773 | ALLOY SUSCEPTOR WITH IMPROVED PROPERTIES FOR FILM DEPOSITION - Provided is a method for processing a wafer that includes providing an alloy susceptor including an exterior surface and a wafer contact surface. The exterior surface of the alloy susceptor is treated to produce a roughness of the exterior surface. The roughened exterior surface of is coated with a ceramic material. The alloy susceptor including the ceramic-coated roughened exterior surface is positioned in a wafer process chamber. A plurality of layers of a film are deposited on the ceramic-coated roughened exterior surface of the alloy susceptor, wherein a first adhesion exists between the plurality of layers of the film and the ceramic material coated on the roughened exterior surface of the alloy susceptor that is greater than a second adhesion that would exist between the plurality of layers of the film and a non-roughened exterior surface of the alloy susceptor without the ceramic material. | 09-30-2010 |
| 20130064973 | Chamber Conditioning Method - A system and method for conditioning a chamber is disclosed. An embodiment comprises utilizing the deposition chamber to deposit a first layer and conditioning the deposition chamber. The conditioning the deposition chamber can be performed by depositing a heterogeneous material over the first layer. The heterogeneous material can cover and encapsulate the first layer, thereby preventing particles of the first layer from breaking off and potentially landing on a substrate during a subsequent processing run. | 03-14-2013 |
| 20130088053 | FOLDABLE FRAME STRUCTURE - A pitman-style foldable frame structure has an innovative and unique assembled design. The frame structure includes foldable panels, a central spindle, lateral frames, oblique connecting rods, a control device, and a central connecting frame. The frame structure offers improvement over the prior art in lowering the material cost and increasing structural support strength and rigidity of the pitman-style foldable frame and achieves practical advancement and better industrial utilization effect. | 04-11-2013 |
| 20130089934 | Material Delivery System and Method - A system and method for controlling saturated vapor pressure of a precursor material is provided. An embodiment comprises generating a calibration curve and utilizing the calibration curve to control a temperature of the precursor material in order to control its saturated vapor pressure. Alternatively, the calibration curve may be substituted for a real time sensor which can take readings in real time and adjust the temperature and saturated vapor pressure based upon the real time readings. | 04-11-2013 |
| 20150099315 | MECHANISMS FOR MONITORING IMPURITY IN HIGH-K DIELECTRIC FILM - Embodiments of mechanisms of monitoring metal impurity in a high-k dielectric film are provided. The method includes forming an interfacial layer over a substrate. The method also includes forming a high-k dielectric film on the interfacial layer, and the interfacial layer and the high-k dielectric film form a stacked structure over the substrate. The method further includes conducting the first thickness measurement on the stacked structure. In addition, the method includes performing a treatment to the stacked structure after the first thickness measurement, and the treatment includes an annealing process. The method also includes conducting the second thickness measurement on the stacked structure after the treatment. | 04-09-2015 |
| 20150129131 | SEMICONDUCTOR PROCESSING APPARATUS AND PRE-CLEAN SYSTEM - A semiconductor processing apparatus includes an electromagnetic generator, an analog signal module, and an electromagnetic shield. The electromagnetic generator is capable of generating an electromagnetic field. The analog signal module is located adjacent to the electromagnetic generator and capable of generating an analog signal. The electromagnetic shield is capable of shielding the analog signal module. The electromagnetic shield includes a plurality of covering plates. Each of the covering plates and the analog signal module are apart from at least a predetermined distance. | 05-14-2015 |
| 20150129414 | PROCESS KIT OF PHYSICAL VAPOR DEPOSITION CHAMBER AND FABRICATING METHOD THEREOF - A physical vapor deposition (PVD) chamber, a process kit of a PVD chamber and a method of fabricating a process kit of a PVD chamber are provided. In various embodiments, the PVD chamber includes a sputtering target, a power supply, a process kit, and a substrate support. The sputtering target has a sputtering surface that is in contact with a process region. The power supply is electrically connected to the sputtering target. The process kit has an inner surface at least partially enclosing the process region, and a liner layer disposed on the inner surface. The substrate support has a substrate receiving surface, wherein the liner layer disposed on the inner surface of the process kit has a surface roughness (Rz), and the surface roughness (Rz) is substantially in a range of 50-200 μm. | 05-14-2015 |
| 20150147892 | METHOD FOR FABRICATING SEMICONDUCTOR STRUCTURE, AND SOLID PRECURSOR DELIVERY SYSTEM - A method for fabricating a semiconductor structure is provided, including: providing a solid precursor having a first average particle size; solving the solid precursor in an organic solvent into an intermediate; recrystallizing the intermediate to form solid granules, wherein the solid granules has a second average particle size larger than the first average particle size; vaporizing the solid granules to form a film-forming gas; and depositing the film-forming gas on a substrate to form a resistance film. A method for modifying a resistance film source in a semiconductor fabrication and a solid precursor delivery system are also provided. The method for fabricating a semiconductor structure in the present disclosure can remove small particles or ultra-small particles from solid precursor, and does not need extra time to dump cracked solid precursor. | 05-28-2015 |
| 20150179483 | PHOTORESIST NOZZLE DEVICE AND PHOTORESIST SUPPLY SYSTEM - Embodiments of a photoresist supply system including a photoresist nozzle device are provided. The photoresist nozzle device includes a tube including a first segment, a curved segment connected to the first segment, and a second segment connected to the curved segment. The photoresist nozzle device also includes a nozzle connected to the second segment. | 06-25-2015 |
| 20150183080 | APPARATUS AND METHOD FOR CHEMICAL MECHANICAL POLISHING - An apparatus for chemical mechanical polishing includes a wafer carrier, a first electrode, a rotatable pedestal, a second electrode, and an electric current detector. The first electrode is disposed at the wafer carrier. The rotatable pedestal is positioned opposite to the wafer carrier in order to perform a polishing operation with the wafer carrier accordingly. The second electrode is disposed at the rotatable pedestal and electrically coupled to the first electrode in order to form a circuit loop. The electric current detector is between the first electrode and the second electrode. | 07-02-2015 |
| 20150191816 | METHOD FOR CONTROLLING EXHAUST FLOW IN WAFER PROCESSING MODULE - Embodiments of mechanisms for processing a wafer are provided. A method for processing a wafer includes placing the wafer into a processing assembly and heating the wafer. The method also includes producing an exhaust flow from the processing assembly via a fluid-conduit assembly. The method further includes detecting an exhaust pressure of the exhaust flow in the fluid-conduit assembly and producing a first signal and a second signal corresponding to the exhaust pressure. In addition, the method includes regulating the exhaust flow in response to the first signal and controlling the processing assembly in response to the second signal. | 07-09-2015 |
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| 20140015621 | BALANCED-TO-UNBALANCED CONVERTER - A balanced-to-unbalanced converter (balun) is provided, including: a converting circuit having a first processing circuit including a first inductor and a first capacitor connected in series, a second processing circuit including a second capacitor and a second inductor connected in series, the second capacitor being electrically connected to the first inductor, and two balanced output ends connected to the first processing circuit and the second processing circuit, respectively; and a preprocessing circuit connected to the converting circuit and including an unbalanced input end for converting real impedance at the unbalanced input end into complex impedance at the balanced output ends. Accordingly, the balun satisfies the need of the wireless communication chips by providing differential signals with complex impedance. This is done by employing the preprocessing circuit in conjunction with the converting circuit to convert an unbalanced signal with real impedance into a balanced signal with complex impedance. | 01-16-2014 |
| 20140204806 | DUPLEXER, CIRCUIT STRUCTURE THEREOF AND RF TRANSCEIVER APPARATUS COMPRISING THE DUPLEXER - A duplexer is provided, which includes a first, a second and a third signal ports; a first filter and a second filter. The first filter has first, second, and third resonant circuits that have first, second and third inductors, respectively. The first, second and third inductors are mutually inductive. The first and third resonant circuits are electrically connected to the first and second signal ports, respectively. The second filter has fourth, fifth and sixth resonant circuits that have fourth, fifth and sixth inductors, respectively. The fourth resonant circuit is connected in series with the first resonant circuit. The fifth inductor and the fourth inductor are mutually inductive. The sixth resonant circuit is electrically connected to the third signal port. The second filter further has a main capacitor connected in series with the fifth and sixth resonant circuits respectively and located therebetween. | 07-24-2014 |
