Patent application number | Description | Published |
20100123505 | ULTRA-LOW VOLTAGE LEVEL SHIFTING CIRCUIT - A voltage level shifting circuit for an integrated circuit system having an internal low voltage power supply (VCCL) and an external high voltage power supply (VCCH) is disclosed, the voltage level shifting circuit comprises a pair of cross coupled PMOS transistors connected to the VCCH, a NMOS transistor with a source connected to a ground (VSS) and a gate connected to a first signal swinging between the VCCL and the VSS, and a first blocking device coupled between the drain of the first PMOS transistor and a drain of the first NMOS transistor, the first blocking device being configured to conduct active current when the first signal is in static state or transitions from a logic HIGH to a logic LOW, and the first blocking device being configured to shut off active current when the first signal transitions from the logic LOW to the logic HIGH. | 05-20-2010 |
20100124099 | 8T LOW LEAKAGE SRAM CELL - This invention discloses a static random access memory (SRAM) cell comprising a pair of cross-coupled inverters having a storage node, and a NMOS transistor having a gate terminal, a first and a second source/drain terminal connected to the storage node, a read word-line (RWL) and a read bit-line (RBL), respectively, the RWL and RBL being activated during a read operation and not being activated during any write operation. | 05-20-2010 |
20100238753 | INTEGRATED CIRCUITS, SYSTEMS, AND METHODS FOR REDUCING LEAKAGE CURRENTS IN A RETENTION MODE - An integrated circuit includes at least one memory array for storing data. A first switch is coupled with the memory array. A first power line is coupled with the first switch. The first power line is operable to supply a first power voltage. A second switch is coupled with the memory array. A second power line is coupled with the second switch. The second power line is operable to supply a second power voltage for retaining the data during a retention mode. A third power line is coupled with the memory array. The third power line is capable of providing a third power voltage. | 09-23-2010 |
20100278002 | CIRCUIT AND METHOD OF PROVIDING CURRENT COMPENSATION - Some embodiments regard a method comprising: during a leakage sampling phase, recognizing a voltage level dropped due to a leakage current associated with a signal linestoring the voltage level; and during a reading phase, using the voltage level to provide an amount of compensation current to the signal line. | 11-04-2010 |
20110187414 | PBTI TOLERANT CIRCUIT DESIGN - In an embodiment related to a sense amplifier, the sense amplifier includes a cross latch includes a pair of nodes, a first pair of transistors, a second pair of transistors, a third node, and a circuit. The pair of nodes includes a first node and a second node configured to store data for the sense amplifier. The second pair of transistors includes a first NMOS transistor and a second NMOS transistor. A first gate of the first NMOS transistor is coupled to the first node, and a second gate of the second NMOS transistor is coupled to the second node. The third node is coupled to a first source of the first NMOS transistor and a second source of the second NMOS transistor. When appropriate, the circuit is configured to provide a voltage level to the third node. | 08-04-2011 |
20110199847 | SENSE AMPLIFIER WITH LOW SENSING MARGIN AND HIGH DEVICE VARIATION TOLERANCE - In an embodiment related to a sense amplifier, the sense amplifier includes a pair of transistors (e.g., transistors P | 08-18-2011 |
20120147688 | INTEGRATED CIRCUITS, SYSTEMS, AND METHODS FOR REDUCING LEAKAGE CURRENTS IN A RETENTION MODE - An integrated circuit includes at least one memory array for storing data. A first switch is coupled with the memory array. A first power line is coupled with the first switch. The first power line is operable to supply a first power voltage. A second switch is coupled with the memory array. A second power line is coupled with the second switch. The second power line is operable to supply a second power voltage for retaining the data during a retention mode. A third power line is coupled with the memory array. The third power line is capable of providing a third power voltage. | 06-14-2012 |
20120306537 | ULTRA-LOW VOLTAGE LEVEL SHIFTING CIRCUIT - A voltage level shifter having an internal low voltage power supply (VCCL) and an external high voltage power supply (VCCH) includes a first PMOS transistor and a second PMOS transistor each with a source connected to the VCCH, a gate of the first PMOS transistor being coupled to a drain of the second PMOS transistor, and a gate of the second PMOS transistor being coupled to a drain of the first PMOS transistor. The voltage level shifter further includes a first NMOS transistor with a source connected to a ground (VSS) and a gate connected to a first signal swinging between the VCCL and the VSS, and a first blocking device coupled between the drain of the first PMOS transistor and a drain of the first NMOS transistor, such that the voltage level shifter can operate at a lower VCCL. | 12-06-2012 |
20130028008 | INTEGRATED CIRCUITS, SYSTEMS, AND METHODS FOR REDUCING LEAKAGE CURRENTS IN A RETENTION MODE - A memory array including at least one cross-latched pair of transistors for storing data. The memory array further includes a first power line for supplying a first reference voltage and a second power line for supplying a second reference voltage. The memory array further includes a first switch having a first output coupled with the at least one cross-latched pair of transistors for selectively connecting the at least one cross-latched pair of transistors to the first power line. The memory array further includes a second switch having a second output coupled with the at least one cross-latched pair of transistors for selectively connecting the at least one cross-latched pair of transistors to the second power line. The first output is coupled to the second output. | 01-31-2013 |
20140269024 | MEMORY DEVICE AND METHOD FOR WRITING THEREFOR - A method of writing a memory cell includes, during a write cycle, causing a voltage level at a power terminal of the memory cell to change from a supply voltage level toward a first voltage level. The voltage level at the power terminal of the memory cell is maintained at the first voltage level for a first predetermined duration. The voltage level at the power terminal of the memory cell is maintained at a second voltage level for a second predetermined duration, where the second voltage level is between the first voltage level and the supply voltage level. During the write cycle, the voltage level at the power terminal of the memory cell is caused to change from the first voltage level toward the supply voltage level. | 09-18-2014 |
Patent application number | Description | Published |
20110292754 | MEMORY WORD-LINE DRIVER HAVING REDUCED POWER CONSUMPTION - A word-line driving circuit for driving a word-line in a memory array includes a NAND circuit having a pair of address inputs and an output, an output inverter circuit having an inverter power supply node, an input coupled to the output of the NAND circuit and an output for providing a word line signal, a power gate coupled between a first power supply node and the inverter power supply node, and a control circuit coupled to the power gate. The control circuit controls the power gate to place the word line driver circuit in active or standby mode in response to the output of the NAND circuit. | 12-01-2011 |
20110299809 | Optical Clock Signal Distribution Using Through-Silicon Vias - An integrated circuit structure includes a semiconductor chip including a front surface and a back surface; a via extending from the back surface of the semiconductor chip into the semiconductor chip, wherein the via is light transparent; and a photon detector in the semiconductor chip and exposed to the via. | 12-08-2011 |
20120037997 | METHOD AND APPARATUS FOR WORD LINE DRIVER WITH DECREASED GATE RESISTANCE - A semiconductor device comprises first, second, and third. The first conductor is a gate conductor formed above an oxide region over a substrate and having a contact. The second conductor is coupled to the contact and extends across a width of the oxide region. The second conductor has a lower resistance than the gate conductor. The third conductor is a word line conductor. The second conductor is routed to not intersect the word line conductor. | 02-16-2012 |
20120056656 | LEVEL SHIFTER - A level shifter includes first and second NMOS transistors with gates connected to inverted circuit and circuit inputs, respectively, sources connected to the ground, and drains connected to circuit and inverted circuit outputs, respectively. First and second PMOS transistors have their gates connected to the inverted circuit and circuit outputs, respectively, and sources connected to the high voltage supply. A third PMOS transistor of the multiple independent gate type has its source connected to the drain of the first PMOS transistor, drain and back-gate connected to the circuit output, and front-gate connected to the inverted circuit input. A fourth PMOS transistor of the multiple independent gate type has its source connected to the drain of the second PMOS transistor, drain and back-gate connected to the inverted circuit output, and front-gate connected to the circuit input. | 03-08-2012 |
20120181707 | Distributed Metal Routing - A system and method for a distributed metal routing is disclosed. An embodiment comprises a metal_0 layer with a metal_1 layer overlying the metal_0 layer. The metal_1 layer comprises separate parallel lines, with lines having different signals being distributed across the metal_1 layer. Such a layout decreases the parasitic resistance within the metal_0 layer as it decreases the distance current travels. Additionally, the distributed layout in metal_1 allows connections to be made to a metal_2 layer without the need for a hammer head connection of vias. | 07-19-2012 |
20120195106 | SRAM Timing Cell Apparatus and Methods - Apparatus and methods for providing SRAM timing tracking cell circuits are disclosed. In an embodiment, an apparatus comprises an SRAM array comprising static random access memory cells arranged in rows and columns; a plurality of word lines each coupled to memory cells along one of the rows; a clock generation circuit for outputting clock signals; a word line generation circuit for generating a pulse on the plurality of word lines responsive to one of the clock signals and for ending the pulse responsive to one of the clock signals; and a tracking cell for receiving a clock signal and for outputting a word line pulse end signal to the clock generation circuit, following an SRAM tracking time; wherein the tracking cell further comprises SRAM tracking circuits positioned in the SRAM array and coupled in series to provide a signal indicating the SRAM tracking time. Methods for SRAM timing are disclosed. | 08-02-2012 |
20120258592 | Layouts of POLY Cut Openings Overlapping Active Regions - A method of forming integrated circuits includes forming a mask layer over a gate electrode line, wherein the gate electrode line is over a well region of a semiconductor substrate; forming an opening in the mask layer, wherein a portion of the gate electrode line and a well pickup region of the well region are exposed through the opening; and removing the portion of the gate electrode line through the opening. | 10-11-2012 |
20120313177 | Multiple Finger Structure - A multiple finger structure comprises a plurality of active regions placed between a pair of dummy POLY lines. The active regions comprise a plurality of multiple fingered NMOS transistors, which are part of a sense amplifier of an SRAM memory circuit. The drain and source of each multiple fingered NMOS transistor have an SiP/SiC epitaxial growth region. The active regions extend and overlap with the dummy POLY lines. The overlap between the active regions and the dummy POLY lines helps to reduce edge imperfection at the edge of the active regions. | 12-13-2012 |
20120327704 | SEMICONDUCTOR MEMORIES - A semiconductor memory includes a bit cell having first and inverters forming a latch. First and second transistors are respectively coupled to first and second storage nodes of the latch and to first and second write bit lines. Each of the first and second transistors has a respective gate coupled to a first node. Third and fourth transistors are coupled together in series at the first node and are disposed between a write word line and a first voltage source. Each of the first and second transistors has a respective gate coupled to a first control line. A fifth transistor has a source coupled to a second voltage source, a drain coupled to at least one of the inverters of the latch, and a gate coupled to the first node. A read port is coupled to a first read bit line and to the second storage node of the latch. | 12-27-2012 |
20120327730 | SRAM Differential Voltage Sensing Apparatus - An SRAM differential voltage sensing apparatus is coupled to a memory circuit. The memory circuit comprises a memory bank, a plurality of bit lines, a plurality of data lines coupled to the plurality of bit lines via a plurality of transmission gates and a sense amplifier. When the sense amplifier operates in a characterization mode, the transmission gates and pre-charge circuits are turned off. The differential voltage sensing apparatus applies a characterization signal to the sense amplifier and obtains the parameters of the memory circuit through a trial and error process. | 12-27-2012 |
20130010544 | LEAKAGE-AWARE KEEPER FOR SEMICONDUCTOR MEMORY - A circuit includes a first circuit configured to sense a leakage of a first bit line and output a first signal in response, and a second circuit configured to receive the first signal output from the first circuit and in response supply current to a second bit line for maintaining a voltage level of the second bit line. | 01-10-2013 |
20130148438 | TRACKING CELL AND METHOD FOR SEMICONDUCTOR MEMORIES - A semiconductor memory includes a memory array having at least one bit line, a tracking bit line, and a global tracking circuit. The tracking bit line is configured to emulate a voltage transition of the at least one bit line. The global tracking circuit is configured to generate a timing signal for generating a negative voltage with respect to ground on the at least one bit line of the memory array. | 06-13-2013 |
20130176062 | TIME DELAY CIRCUIT AND METHOD OF GENERATING TIME DELAYED SIGNAL - A delay circuit includes an input port, an output port, a first delay circuit block, a second delay circuit block, and an inverter module. The first delay circuit block is coupled to the input port and configured to generate an intermediate signal by applying a first delay to an input signal. The inverter module has an input terminal and an output terminal. The input terminal of the inverter module is coupled to the first delay circuit block, and the inverter module is configured to generate an inverted intermediate signal at the output terminal. The second delay circuit block is coupled to the output terminal of the inverter module and configured to generate a delayed signal by applying a second delay to the inverted intermediate signal. | 07-11-2013 |
20130188433 | MEMORY CIRCUIT AND METHOD OF WRITING DATUM TO MEMORY CIRCUIT - A circuit includes a first node, a second node, a memory cell, a first data line, a second data line, and a write driver. The memory cell is coupled to the first node and the second node and powered by a first voltage at the first node and a second voltage at the second node. The first data line and the second data line are coupled to the memory cell. The write driver has a third node carrying a third voltage less than the first voltage during a write operation. The write deriver is coupled to the first data line and the second data line and configured to, during a write operation, selectively coupling one of the first data line and the second data line to the third node and coupling the other one of the first data line and the second data line to the first node. | 07-25-2013 |
20130242644 | MEMORY CELL AND MEMORY ARRAY - A memory cell includes a first, second, and third columns of devices. The first column of devices includes a first pull-down transistor, a second pull-down transistor, a first switch, and a second switch. The second column of devices includes a third pull-down transistor, a fourth pull-down transistor, a third switch, and a fourth switch. The third column of devices includes a first pull-up transistor, and a second pull-up transistor. The first pull-up transistor, the first pull-down transistor, and the third pull-down transistor are connected as a first inverter, and the second pull-up transistor, the second pull-down transistor, and the fourth pull-down transistor are connected as a second inverter. The first inverter and the second inverter are cross-coupled. The first switch, the second switch, the third switch, and the fourth switch are coupled with output terminals of the first and second inverters. | 09-19-2013 |
20130263065 | PRE-COLORED METHODOLOGY OF MULTIPLE PATTERNING - Some embodiments relate to a method for pre-coloring data within an integrated chip layout to avoid overlay errors that result from mask misalignment during multiple patterning lithography. The method may be performed by generating a graphical IC layout file containing an integrated chip layout having a plurality of IC shapes. The IC shapes within the graphical IC layout file are assigned a color during decomposition. The IC shapes are further pre-colored in a manner that deliberately assigns the pre-colored data to a same mask. During mask building data associated with IC shapes that have been pre-colored is automatically sent to a same mask, regardless of the colors that are assigned to the shapes. Therefore, the pre-colored shapes are not assigned to a masked based upon a decomposition, but rather based upon the pre-coloring. By assigning IC shapes to a same mask through pre-coloring, overlay errors can be reduced. | 10-03-2013 |
20130263066 | Pre-Colored Methodology of Multiple Patterning - Some embodiments relate to a method of pre-coloring word lines and control lines within an SRAM integrated chip design to avoid timing delays that result from processing variations introduced through multiple patterning lithography processes. The method is performed by generating a graphical IC layout file having an SRAM circuit with a plurality of word lines and Y-control lines. The word lines and Y-control lines are assigned a color during decomposition. The word lines and Y-control lines are further pre-colored in a manner that deliberately assigns the pre-colored data to a same mask. Therefore, during mask building, data associated with pre-colored word and Y-control lines is sent to a same mask, regardless of the colors that are assigned to the data. By assigning word and Y-control lines to a same mask through pre-coloring, processing variations between the word and Y-control lines are minimized, thereby mitigating timing variations in an SRAM circuit. | 10-03-2013 |
20140022852 | DATA INVERSION FOR DUAL-PORT MEMORY - A semiconductor memory includes first and second memory storage latches each including first and second ports. A first pair of bit lines is coupled to the first ports, and a second pair of bit lines is coupled to the second ports. The first and second pairs of bit lines are twisted between the first and second memory storage latches. A first sense amplifier is coupled to the first pair of bit lines for outputting data, and a second sense amplifier is coupled to the second pair of bit lines for outputting an intermediate data signal. Output logic circuitry is coupled to an output of the second sense amplifier and is configured to output data based on the intermediate data signal and a control signal that identifies if the data is being read from the first memory storage latch or from the second memory storage latch. | 01-23-2014 |
20140068531 | PRE-COLORED METHODOLOGY OF MULTIPLE PATTERNING - Some embodiments relate to a method for pre-coloring data within an integrated chip layout to avoid overlay errors that result from mask misalignment during multiple patterning lithography. The method may be performed by generating a graphical IC layout file containing an integrated chip layout having a plurality of IC shapes. The IC shapes within the graphical IC layout file are assigned a color during decomposition. The IC shapes are further pre-colored in a manner that deliberately assigns the pre-colored data to a same mask. During mask building data associated with IC shapes that have been pre-colored is automatically sent to a same mask, regardless of the colors that are assigned to the shapes. Therefore, the pre-colored shapes are not assigned to a masked based upon a decomposition, but rather based upon the pre-coloring. By assigning IC shapes to a same mask through pre-coloring, overlay errors can be reduced. | 03-06-2014 |
20140073124 | EDGE DEVICES LAYOUT FOR IMPROVED PERFORMANCE - A method includes forming a first plurality of fingers over an active area of a semiconductor substrate. Each of the first plurality of fingers has a respective length that extends in a direction that is parallel to width direction of the active area. The first plurality of fingers form at least one gate of at least one transistor having a source and a drain formed by a portion of the active area. A first dummy polysilicon structure is formed over a portion of the active area between an outer one of the first plurality of fingers and a first edge of the semiconductor substrate. A second dummy polysilicon structure is over the semiconductor substrate between the first dummy polysilicon structure and the first edge of the semiconductor substrate. | 03-13-2014 |
20140133219 | Power Line Lowering for Write Assisted Control Scheme - Some embodiments of the present disclosure relate to a memory array having a cell voltage generator configured to provide a cell voltage header to a plurality of memory cells. The cell voltage generator is connected to the memory cells by way of supply voltage line and controls a supply voltage of the memory cells. The cell voltage generator has a pull-down element coupled between a control node of the supply voltage line and a ground terminal, and a one or more pull-up elements connected in parallel between the control node and a cell voltage source. A control unit is configured to provide one or more variable valued pull-up enable signals to input nodes of the pull-up elements. The variable valued pull-up enable signals operate the pull-up elements to selectively connect the supply voltage line from the cell voltage source to provide a cell voltage header with a high slew rate. | 05-15-2014 |
20140185363 | BIT CELL INTERNAL VOLTAGE CONTROL - Among other things, techniques for facilitating a write operation to a bit cell are provided. A pulse generator initializes lowering of an internal voltage level associated with a bit cell that is to be written to by a write operation. In this way, the bit cell is placed into a writeable voltage state, such that a potential of the bit cell can be overcome by the write operation. A voltage detector sends a reset signal to the pulse generator based upon the pulse generator lowering the internal voltage level past a reset trigger level. Responsive to receiving the reset signal, the pulse generator initializes charging of the internal voltage level to an original voltage level. In this way, the lowering of the internal voltage level is controlled so that one or more other bit cells are not affected (e.g., suffer data retention failure) by the relatively lower internal voltage level. | 07-03-2014 |
20140201692 | PRE-COLORED METHODOLOGY OF MULTIPLE PATTERNING - Some embodiments relate to a system that pre-colors word lines and control lines within a memory cell to avoid timing delays that result from processing variations introduced through multiple patterning lithography processes. The system has a memory element that stores a graphical IC layout with a memory circuit having layout features including a plurality of word lines and a plurality of Y-control lines. A pre-coloring element pre-colors one or more of the plurality of word lines and Y-control lines, to indicate that pre-colored word lines and Y-control lines are to be formed on a same mask of a multiple mask set used for a multiple patterning lithography process. A decomposition element assigns different colors to uncolored layout features of the memory circuit, to indicate that different colored memory features are to be formed on different masks of the multiple mask set. | 07-17-2014 |
20140211578 | BOOSTED READ WRITE WORD LINE - One or more techniques or systems for boosting a read word line (RWL) or a write word line (WWL) of a two port synchronous random access memory (SRAM) bit cell array are provided herein. In some embodiments, a boosted control block is configured to generate a boosted word line signal configured to operate a RWL, a WWL, or a read write word line (RWWL). In some embodiments, the boosted word line signal includes a first stage and a second stage. For example, the first stage is associated with a first stage voltage level at a positive supply voltage (Vdd) voltage level and the second stage is associated with a second stage voltage level above the Vdd voltage level. In this manner, a read or write operation is boosted for an SRAM bit cell, because the second stage boosts a corresponding transistor in the SRAM bit cell, for example. | 07-31-2014 |
20150015335 | SENSE AMPLIFIER LAYOUT FOR FINFET TECHNOLOGY - A sense amplifier (SA) comprises a semiconductor substrate having an oxide definition (OD) region, a pair of SA sensing devices, a SA enabling device, and a sense amplifier enabling signal (SAE) line for carrying an SAE signal. The pair of SA sensing devices have the same poly gate length Lg as the SA enabling device, and they all share the same OD region. When enabled, the SAE signal turns on the SA enabling device to discharge one of the pair of SA sensing devices for data read from the sense amplifier. | 01-15-2015 |
20150063040 | THREE DIMENSIONAL CROSS-ACCESS DUAL-PORT BIT CELL DESIGN - A semiconductor memory comprises a dual-port memory array having a plurality of cross-access dual-port bit cells arranged in a plurality of rows and a plurality of columns, wherein each of the plurality of cross-access dual-port bit cells has two cross-access ports for read and write of one or more bits of data to the cross-access dual port bit cell. The semiconductor memory further comprises a pair of word lines associated with at least one of the plurality of rows of the dual-port memory array, wherein the pair of word lines is configured to carry a pair of row selection signals for enabling one or more read and write operations on one or more cross-access dual-port bit cells in the row. The semiconductor memory further comprises a pair of column selection lines associated with at least one of the plurality of columns of the dual port memory array, wherein the pair of column selection lines is configured to carry a pair of column selection signals for enabling the cross-access dual-port bit cells in the column during the read and write operations. | 03-05-2015 |
20150085556 | THREE DIMENSIONAL DUAL-PORT BIT CELL AND METHOD OF USING SAME - A three dimensional dual-port bit cell generally comprises a first portion disposed on a first tier, wherein the first portion includes a plurality of port elements. The dual-port bit cell also includes a second portion disposed on a second tier that is vertically stacked with respect to the first tier using at least one via, wherein the second portion includes a latch. | 03-26-2015 |
20150085567 | THREE-DIMENSIONAL TWO-PORT BIT CELL - A semiconductor memory includes a read port array disposed on a first layer of a three-dimensional integrated circuit and a bit cell array disposed on a second layer of the three-dimensional integrated circuit. The second layer being vertically positioned above or below the first layer. At least one bit cell of the bit cell array is coupled to at least one read port cell of the read port array by a via extending from the first layer to the second layer. | 03-26-2015 |