Patent application number | Description | Published |
20080295585 | Tweezer-Equipped Scanning Probe Microscope and Transfer Method - A tweezer-equipped scanning probe microscope comprises a first arm with a probing portion, a second arm that moves along an opening direction or a closing direction relative to the first arm, an electrostatic actuator that drives the second arm along the opening direction or the closing direction based upon an opening/closing drive voltage applied thereto, an amplifier that induces self-oscillation in the electrostatic actuator by using an electrically equivalent circuit accompanying the electrostatic actuator as a feedback circuit and causes the second arm to vibrate through the self-oscillation, and a vibration state detection unit that detects a change of vibration state of the second arm as the second arm contacts an object. | 12-04-2008 |
20080314131 | SAMPLE MANIPULATING APPARATUS - There is provided a sample manipulating apparatus | 12-25-2008 |
20090000365 | AFM Tweezers, Method for Producing AFM Tweezers, and Scanning Probe Microscope - AFM tweezers includes: a first probe that comprises a triangular prism member having a ridge, a tip of which is usable as a probe tip in a scanning probe microscope; a second probe that comprises a triangular prism member provided so as to open/close with respect to the first probe. The first probe and the second probe are juxtaposed such that a predetermined peripheral surface of the triangular prism member of the first probe and a predetermined peripheral surface of the triangular prism member of the second probe face substantially in parallel to each other, and the first probe formed of a notch that prevents interference with a sample when the sample is scanned by the tip of the ridge. | 01-01-2009 |
20090188011 | TWEEZERS SYSTEM FOR SCANNING PROBE MICROSCOPE, SCANNING PROBE MICROSCOPE APPARATUS AND METHOD OF REMOVING DUST - To enable to freely interchange a front end shape of a work in accordance with an object of, for example, removing a dust or the like, in addition thereto, even in a case of contaminating a work, to be able to easily deal therewith, and to be able to recognize a defect even when, for example, operated by an operator of a beginner without being governed by a technique of the operator, a tweezers constituted by two arms having probes arranged opposedly to a sample integrated to a scanning probe microscope and constituting an object of observation or working respectively at front ends thereof, and a plurality of kinds of interchanging works one of the plurality of kinds of which is selectively grasped by the tweezers are provided. As the interchanging works, there are an observing stylus work, a work for a contact hole, a corner moving work, a cutting work, a spatula shape work. | 07-23-2009 |
20090206855 | Conductivity measuring apparatus and conductivity measuring method - The present invention is a conductivity measuring device comprising that two terminals tweezer having two probes of a observing probe and a grasping probe arranged contiguously along the face which is parallel to a sample support face. Two terminals of a tweezer are pressed while adjusts pressing force to a sample surface, it is galvanized between two terminal tweezer, and conductivity is determined making a current between the two terminals tweezers. | 08-20-2009 |
20120227139 | FRICTION FORCE MICROSCOPE - Provided is a friction force microscope that can measure a friction force by a cantilever in a quantitative manner. The friction force microscope includes a friction force calculating mechanism that calculates an effective probe height and a torsional spring constant of the cantilever from bending sensitivity determined from displacement information in a bending direction of the cantilever and torsional sensitivity determined from displacement information in a torsional direction of the cantilever, respectively, so as to use the calculated values for calculating the friction force. | 09-06-2012 |
Patent application number | Description | Published |
20100065928 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - In one aspect of the present invention, a semiconductor device may include a first semiconductor layer of a first conductivity type and having a main surface that has a first plane orientation, a second semiconductor layer of the first conductivity type and having a main surface that has a second plane orientation different from the first plane orientation, the second semiconductor layer being directly provided on the first semiconductor layer, a third semiconductor layer having a main surface that has the first plane orientation, and being formed on the first semiconductor layer and on a side face of the second semiconductor layer, a gate electrode formed on the second semiconductor layer via a gate insulating film, first impurity diffusion regions of a second conductivity type, and being formed in the second semiconductor layer so that the gate electrode is located on a region sandwiched in a gate length direction between the first impurity diffusion regions, the first impurity diffusion regions extending to an interface between the first and second semiconductor layers, and second impurity diffusion regions of a second conductivity type, and being formed so as to extend from the third semiconductor layers to the first semiconductor layer, respectively, so that both the first impurity diffusion regions is sandwiched in the gate length direction between the second impurity diffusion regions. | 03-18-2010 |
20100230721 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - In one aspect of the present invention, a semiconductor device may include a gate electrode formed on a gate insulation film on a main surface of a semiconductor substrate of a first conductivity type; source/drain regions formed to sandwich a channel region formed below the gate electrode, the source/drain regions having a structure in which a first semiconductor layer and a second semiconductor layer are stacked in this order, the first semiconductor layer containing a first element and an impurity of a second conductivity type that are forgiving strain to the channel region, and containing a second element that is for suppressing a diffusion of the impurity of the second conductivity type, the second semiconductor layer containing the first element and the impurity of the second conductivity type; and source/drain extension regions adjacent to the channel region, the extension regions extending respectively from the second semiconductor layers. | 09-16-2010 |
Patent application number | Description | Published |
20150255510 | SEMICONDUCTOR DEVICE - According to one embodiment, a first transistor includes a first semiconductor region, a second semiconductor region, a third semiconductor region, a first gate insulating film, and a first gate electrode. The first semiconductor region is provided in a first semiconductor layer extending in a second direction substantially perpendicular to the surface of the semiconductor substrate from the first line. The second semiconductor region is provided above the first semiconductor region in the first semiconductor layer. The third semiconductor region is provided above the second semiconductor region in the first semiconductor layer. The first gate insulating film covers a first side face of the first semiconductor layer. The first gate electrode covers the first side face of the first semiconductor layer through the first gate insulating film. The first transistor has an asymmetrical structure with respect to a center face of the second semiconductor region in the second direction. | 09-10-2015 |
20150270312 | SEMICONDUCTOR DEVICE - According to an embodiment, a semiconductor device includes at least two control electrodes, a plurality of semiconductor layers and an insulating film. Each control electrode extends in a first direction. The semiconductor layers are provided between the control electrodes, and arranged in the first direction. Each semiconductor layer extends in a second direction orthogonal to the first direction. The insulating film covers side surfaces of the semiconductor layers, and is disposed between the control electrodes. Each semiconductor layer has a side surface that includes at least one curved surface swelling in a direction from a center of the semiconductor layer to the insulating film. | 09-24-2015 |
20150340605 | INTEGRATED CIRCUIT DEVICE - An integrated circuit device according to an embodiment includes two electrodes and two semiconductor layers. The two electrodes extend in a first direction. The two semiconductor layers are placed between the two electrodes, are spaced from each other in the first direction, and extend in a second direction orthogonal to the first direction. The two electrodes include extending parts extending out so as to come close to each other. In a cross section orthogonal to the second direction, the extending parts extend into a region interposed between a pair of tangent lines. The pair of tangent lines tangent to both the two semiconductor layers and do not cross each other. | 11-26-2015 |
20150349252 | INTEGRATED CIRCUIT DEVICE - An integrated circuit device according to an embodiment includes an electrode extending in a first direction, two semiconductor members spaced from each other in the first direction and extending in a second direction crossing the first direction, an insulating film placed between each of the two semiconductor members and the electrode and made of a first insulating material, and a first dielectric member placed between the two semiconductor members and made of a second insulating material having a higher permittivity than the first insulating material. | 12-03-2015 |
20150357379 | SEMICONDUCTOR DEVICE - According to an embodiment, a semiconductor device includes two electrodes extending in a first direction, a semiconductor layer provided between the two electrodes, an insulating film disposed between the two electrodes. The two electrodes are arranged in a second direction intersecting the first direction. The semiconductor layer extends in a third direction orthogonal to the first direction and the second direction. The insulating film covers a side surface of the semiconductor layer opposite to one of the two electrodes. The semiconductor layer has a shape in a cross section perpendicular to the third direction such that a width in the first direction at a center of the cross section is narrower than a width, in the first direction, of the side surface. | 12-10-2015 |
Patent application number | Description | Published |
20110127484 | RESISTANCE CHANGE MEMORY AND MANUFACTURING METHOD THEREOF - According to one embodiment, a resistance change memory includes a first interconnect extending in a first direction, a second interconnect extending in a second direction intersecting with the first direction, and a cell unit which is provided between the first interconnect and the second interconnect. The cell unit includes a non-ohmic element and a memory element. The non-ohmic element includes a first silicon layer of an n-conductivity type and a conducting layer in contact with a first face of the first silicon layer. The memory element stores data according to a reversible change of a resistance state. The first silicon layer includes a first element and a second element as donor. | 06-02-2011 |
20110233500 | SEMICONDUCTOR MEMORY DEVICE INCLUDING MEMORY CELL HAVING RECTIFYING ELEMENT AND SWITCHING ELEMENT - According to one embodiment, a semiconductor memory device includes a first conductive line, a second conductive line, a rectifying element, a switching element, a first side wall film and a second side wall film. The first conductive line extends in a first direction. The second conductive line extends in a second direction crossing the first direction. The rectifying element is connected between the first and second conductive lines. The switching element is connected in series with the rectifying element between the first and second conductive lines. The first side wall film is formed on a side surface of the rectifying element. The second side wall film is formed on a side surface of at least one of the first and second conductive lines. At least one of a film type and a film thickness of the second side wall film is different from that of the first side wall film. | 09-29-2011 |
20120145986 | SEMICONDUCTOR MEMORY DEVICE - A memory cell comprises a diode layer, a variable resistance layer, a first electrode layer. The diode layer functions as a rectifier element. The variable resistance layer functions as a variable resistance element. The first electrode layer is provided between the variable resistance layer and the diode layer. The first electrode layer comprises a titanium nitride layer configured by titanium nitride. Where a first ratio is defined as a ratio of titanium atoms to nitrogen atoms in a first region in the titanium nitride layer and a second ratio is defined as a ratio of titanium atoms to nitrogen atoms in a second region which is in the titanium nitride layer and is nearer to the variable resistance layer than is the first region, the second ratio is larger than the first ratio. | 06-14-2012 |
20120313065 | SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor memory device includes a cell array layer including a first wire, a memory cell stacked on the first wire, and a second wire formed on the memory cell. The memory cell includes a variable resistance element and a current control element The current control element includes a first conductivity-type semiconductor into which a first impurity is doped, an i-type semiconductor in contact with the first conductivity-type semiconductor, a second conductivity-type semiconductor into which a second impurity is doped, and an impact ionization acceleration unit being formed between the i-type semiconductor and one of the first conductivity-type semiconductor and the second conductivity-type semiconductor. | 12-13-2012 |
20130277640 | NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME - A non-volatile semiconductor memory device includes a cell array layer including a first wire, one or more memory cells stacked on the first wire, and a second wire formed on the memory cell so as to cross the first wire, wherein the memory cell includes a current rectifying element and a variable resistance element, and an atomic composition ratio of nitrogen is higher than that of oxygen in a part of a sidewall of the current rectifying element. | 10-24-2013 |
20140003127 | SEMICONDUCTOR MEMORY DEVICE | 01-02-2014 |
20140003128 | SEMICONDUCTOR MEMORY DEVICE | 01-02-2014 |
20140021436 | SEMICONDUCTOR MEMORY DEVICE - A memory cell comprises a diode layer, a variable resistance layer, a first electrode layer. The diode layer functions as a rectifier element. The variable resistance layer functions as a variable resistance element. The first electrode layer is provided between the variable resistance layer and the diode layer. The first electrode layer comprises a titanium nitride layer configured by titanium nitride. Where a first ratio is defined as a ratio of titanium atoms to nitrogen atoms in a first region in the titanium nitride layer and a second ratio is defined as a ratio of titanium atoms to nitrogen atoms in a second region which is in the titanium nitride layer and is nearer to the variable resistance layer than is the first region, the second ratio is larger than the first ratio. | 01-23-2014 |
20140347911 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE - A nonvolatile semiconductor memory device according to an embodiment comprises a memory cell block that includes a memory cell array, the memory cell array including: a plurality of first lines; a plurality of second lines intersecting the plurality of first lines; and a memory cell that is provided at each of intersections of the plurality of first lines and the plurality of second lines and includes a variable resistance element, the memory cell array further including a protective resistance film that is provided respectively at each of the intersections of the plurality of first lines and the plurality of second lines and that is connected in series with the memory cell and ohmically contacts the memory cell, and the protective resistance film being configured from a material having a resistivity of 1˜100 Ω·cm. | 11-27-2014 |
20150092473 | SEMICONDUCTOR MEMORY DEVICE - A semiconductor memory device according to an embodiment includes: a memory cell array including a plurality of first lines, a plurality of second lines, and memory cells disposed at each of intersections of the first lines and the second lines; and a control circuit configured to apply a first voltage to a selected first line, apply a second voltage having a voltage value which is smaller than that of the first voltage to a selected second line, and apply a third voltage and a fourth voltage to a non-selected first line and a non-selected second line, respectively. The control circuit is configured to apply a fifth voltage to one of the non-selected first lines that is adjacent to the selected first line, and apply a sixth voltage to one of the non-selected second lines that is adjacent to the selected second line. | 04-02-2015 |
20150124516 | SEMICONDUCTOR MEMORY DEVICE - A semiconductor memory device according to an embodiment includes a memory cell array including memory cells, the memory cells each configured having a current rectifier element and a variable resistance element connected in series therein. Each of the memory cells has formed on a side surface thereof: a first insulating film provided on a side surface of the current rectifier element and the variable resistance element and having a composition ratio of a non-silicon element to silicon which is a first value; a silicon oxide film provided on a side surface of the first insulating film; and a second insulating film provided on a side surface of the silicon oxide film and having a composition ratio of a non-silicon element to silicon which is a second value. The first value is smaller than the second value. | 05-07-2015 |
Patent application number | Description | Published |
20100112801 | Method of manufacturing semiconductor device - A method of manufacturing a semiconductor device is disclosed which comprises forming a gate structure on a major surface of a semiconductor substrate with a gate insulating film interposed therebetween, forming a first insulating film to cover top and side surfaces of the gate structure and the major surface of the semiconductor substrate, reforming portions of the first insulating film which cover the top surface of the gate structure and the major surface of the semiconductor substrate by an anisotropic plasma process using a gas not containing fluorine, and removing the reformed portions of the first insulating film. | 05-06-2010 |
20100244154 | SEMICONDUCTOR DEVICE INCLUDING MISFET - A semiconductor device includes a semiconductor substrate, a gate insulating film, a gate electrode, a source/drain layer, and a germanide layer. The gate insulating film is formed on the semiconductor substrate. The gate electrode is formed on the gate insulating film. The source/drain layer is formed on both sides of the gate electrode, contains silicon germanium, and has a germanium layer in a surface layer portion. The germanide layer is formed on the germanium layer of the source/drain layer. | 09-30-2010 |
20100321979 | RESISTANCE CHANGE MEMORY - A resistance change memory includes a first conductive line extending in a first direction, a second conductive line extending in a second direction which is crossed to the first direction, a cell unit including a memory element and a rectification connected in series between the first and second conductive lines, and a control circuit which is connected to both of the first and second conductive lines. The control circuit controls a value of voltage which is applied to the memory element to change a resistance of the memory element reversibly between first and second values. The rectification includes a p-type semiconductor layer, an n-type semiconductor layer and an intrinsic semiconductor layer therebetween. The rectification has a first diffusion prevention area in the intrinsic semiconductor layer. | 12-23-2010 |
20110147691 | SEMICONDUCTOR MEMORY DEVICE USING VARIABLE RESISTANCE ELEMENT OR PHASE-CHANGE ELEMENT AS MEMORY DEVICE - A semiconductor memory device includes a first conductive line, a second conductive line, a cell unit, a silicon nitride film and a double-sidewall film. The first conductive line extends in a first direction. The second conductive line extends in a second direction crossing the first direction. The cell unit includes a phase-change film and a rectifier element connected in series with each other between the first conductive line and the second conductive line. The silicon nitride film is formed on a side surface of the phase-change film. The double-sidewall film includes a silicon oxide film and the silicon nitride film formed on a side surface of the rectifier element. | 06-23-2011 |
20110227017 | SEMICONDUCTOR MEMORY DEVICE INCLUDING VARIABLE RESISTANCE ELEMENT OR PHASE-CHANGE ELEMENT - According to one embodiment, a semiconductor memory device includes a first conductive line, a second conductive line, a cell unit, a silicon nitride film, and an insulating film. The first conductive line extends in a first direction. The second conductive line extends in a second direction crossing the first direction. The cell unit includes a phase-change film and a diode including a p-type semiconductor layer and an n-type semiconductor layer. The cell unit is connected in series between the first conductive line and the second conductive line. The silicon nitride film is formed on a side surface of the phase-change film. The insulating film is formed on a side surface of the diode and has a smaller amount of charge trapping than the silicon nitride film. | 09-22-2011 |
20110233507 | RESISTANCE CHANGE MEMORY AND METHOD OF MANUFACTURING THE SAME - According to one embodiment, a resistance change memory includes a first interconnect line extending in a first direction, a second interconnect line extending in a second direction intersecting with the first direction, a cell unit which is provided at the intersection of the first interconnect line and the second interconnect line and which includes a memory element and a non-ohmic element that are connected in series. The non-ohmic element has a first semiconductor layer which includes at least one diffusion buffering region and a conductive layer adjacent to the first semiconductor layer. The diffusion buffering region is different in crystal structure from a semiconductor region except for the diffusion buffering region in the first semiconductor layer. | 09-29-2011 |
20130062589 | RESISTANCE CHANGE MEMORY - A resistance change memory includes a first conductive line extending in a first direction, a second conductive line extending in a second direction which is crossed to the first direction, a cell unit including a memory element and a rectification connected in series between the first and second conductive lines, and a control circuit which is connected to both of the first and second conductive lines. The control circuit controls a value of voltage which is applied to the memory element to change a resistance of the memory element reversibly between first and second values. The rectification includes a p-type semiconductor layer, an n-type semiconductor layer and an intrinsic semiconductor layer therebetween. The rectification has a first diffusion prevention area in the intrinsic semiconductor layer. | 03-14-2013 |
20130163323 | SEMICONDUCTOR MEMORY DEVICE USING VARIABLE RESISTANCE ELEMENT OR PHASE-CHANGE ELEMENT AS MEMORY DEVICE - A semiconductor memory device includes a first conductive line, a second conductive line, a cell unit, a silicon nitride film and a double-sidewall film. The first conductive line extends in a first direction. The second conductive line extends in a second direction crossing the first direction. The cell unit includes a phase-change film and a rectifier element connected in series with each other between the first conductive line and the second conductive line. The silicon nitride film is formed on a side surface of the phase-change film. The double-sidewall film includes a silicon oxide film and the silicon nitride film formed on a side surface of the rectifier element. | 06-27-2013 |
20130292627 | RESISTANCE CHANGE MEMORY AND METHOD OF MANUFACTURING THE SAME - According to one embodiment, a resistance change memory includes a first interconnect line extending in a first direction, a second interconnect line extending in a second direction intersecting with the first direction, a cell unit which is provided at the intersection of the first interconnect line and the second interconnect line and which includes a memory element and a non-ohmic element that are connected in series. The non-ohmic element has a first semiconductor layer which includes at least one diffusion buffering region and a conductive layer adjacent to the first semiconductor layer. The diffusion buffering region is different in crystal structure from a semiconductor region except for the diffusion buffering region in the first semiconductor layer. | 11-07-2013 |
Patent application number | Description | Published |
20120288121 | ACOUSTIC CONTROL DEVICE - A DSP performs a sound volume adjustment processing that adjusts a playback sound volume in accordance with a signal level of acoustic data in acoustic contents. Further, when the DSP detects that the acoustic data is switched, the DSP initializes the adjustment to perform a reset processing that performs adjustment in accordance with the acoustic data which is a new playback target. When the changing instruction of the playback position of the acoustic data is accepted, an audio microcomputer instructs the DSP to perform the reset processing. | 11-15-2012 |
20120294461 | SOUND EQUIPMENT, VOLUME CORRECTING APPARATUS, AND VOLUME CORRECTING METHOD - Sound equipment is configured to average an average value of a signal level at each predetermined frequency band of a sound signal at a different averaging time, to weight the average value calculated at a different averaging time by using an individual weighting value, to obtain a representative value based on a weighted average value, to determine a gain of a sound signal based on an obtained representative value, to correct a volume based on the corresponding gain, and to correct a volume based on the gain. The representative value is obtained by selecting the average value at which a gain becomes minimum within each weighted average value. The averaging performs at least a first averaging using the averaging time corresponding to the sound signal that the signal level changes rapidly, and a second averaging using the averaging time longer than the averaging time of the first averaging. | 11-22-2012 |
20120296459 | AUDIO APPARATUS - An audio apparatus according to an embodiment includes an audio signal receiving unit, a music gap signal receiving unit, a playback unit, and a determining unit. The audio signal receiving unit receives an audio signal in which successive multiple music data are contained in a single block of data. The determining unit determines a boundary of the music data on the basis of the time at which the music gap signal that indicates the boundary of the music data by the music gap signal receiving unit and the duration of a silent period in the audio signal that is played back by the playback unit. | 11-22-2012 |
Patent application number | Description | Published |
20110236283 | NOx REMOVAL CATALYST FOR HIGH-TEMPERATURE FLUE GAS, MANUFACTURING METHOD THEREOF, AND NOx REMOVAL METHOD FOR HIGH-TEMPERATURE FLUE GAS - A NOx removal catalyst for high-temperature flue gas according to the present invention is a NOx removal catalyst for high-temperature flue gas that contains nitrogen oxide in which tungsten oxide with the number of molecular layers of tungsten oxide (WO | 09-29-2011 |
20120294789 | CO SHIFT CATALYST, CO SHIFT REACTOR, AND METHOD FOR PURIFYING GASIFIED GAS - A CO shift catalyst according to the present invention is one that reforms carbon monoxide (CO) in gas. The CO shift catalyst includes: active ingredients including one of molybdenum (Mo) and iron (Fe) as a main ingredient and one of nickel (Ni) and ruthenium (Ru) as an accessory ingredient; and one or at least two oxides of titanium (Ti), zirconium (Zr), and cerium (Ce) as a carrier supporting the active ingredients. The CO shift catalyst can be used for a CO shift reactor | 11-22-2012 |
20140208767 | FUEL SUPPLY SYSTEM, SCRAMJET ENGINE AND METHOD FOR OPERATING THE SAME - In order to stably use a catalyst for pyrolysis and supply a reformed fuel, the fuel supply system includes a fuel reforming section which pyrolyses a hydrocarbon system fuel by the heat of the combustion chamber to generate the reformed fuel. The fuel reforming section includes a preheat vaporization section provided on the combustion chamber, and a decomposition reaction section that is provided on the preheat vaporization section and includes the catalyst for pyrolysis. The preheat vaporization section heats the fuel, the decomposition reaction section pyrolyses the heated fuel to generate the reformed fuel, and the fuel reforming section supplies the reformed fuel to the combustion chamber. The reforming catalyst includes a zeolitic catalyst. | 07-31-2014 |
20140329668 | NOx REMOVAL CATALYST FOR HIGH-TEMPERATURE FLUE GAS, MANUFACTURING METHOD THEREOF, AND NOx REMOVAL METHOD FOR HIGH-TEMPERATURE FLUE GAS - A NOx removal catalyst for high-temperature flue gas according to the present invention is a NOx removal catalyst for high-temperature flue gas that contains nitrogen oxide in which tungsten oxide with the number of molecular layers of tungsten oxide (WO | 11-06-2014 |
20140346403 | CARBON MONOXIDE SHIFT REACTION APPARATUS AND CARBON MONOXIDE SHIFT REACTION METHOD - A CO shift reaction apparatus is configured to suppress degradation of catalytic activity of a CO shift catalyst containing molybdenum and prolong the life of the catalyst. A CO shift reaction method uses the CO shift reaction apparatus. The CO shift reaction apparatus is configured to reform carbon monoxide contained in gas and includes a CO shift catalyst containing molybdenum; a reactor at least comprising: a gas inlet for introducing gas; a CO shift catalyst layer filled with the CO shift catalyst and through which the introduced gas passes; and a gas outlet for discharging the gas which has passed through the CO shift catalyst layer; and cooling means configured to cool the CO shift catalyst layer. | 11-27-2014 |
20140369915 | CATALYST FOR HYDROLYSIS OF CARBONYL SULFIDE AND HYDROGEN CYANIDE AND USE OF TITANIUM DIOXIDE-BASED COMPOSITION - Provided are a catalyst for hydrolysis and use of a titanium dioxide-based composition which are capable of removing COS and HCN simultaneously at high degradation percentages. The catalyst for hydrolysis is a catalyst for hydrolysis of carbonyl sulfide and hydrogen cyanide, having at least: an active component containing, as a main component, at least one metal selected from the group consisting of barium, nickel, ruthenium, cobalt, and molybdenum; and a titanium dioxide-based support supporting the active component. | 12-18-2014 |
20150291898 | CO SHIFT CATALYST, CO SHIFT REACTOR, AND METHOD FOR PURIFYING GASIFICATION GAS - Provided is a CO shift catalyst that reforms carbon monoxide (CO) in a gas. The CO shift catalyst includes an active component containing either molybdenum (Mo) or iron (Fe) as a main component, and either nickel (Ni) or ruthenium (Ru) as an accessory component, and a carrier which carries the active component and consists of one or two or more kinds of oxides of titanium (Ti), zirconium (Zr), and cerium (Ce). A temperature during catalyst manufacturing firing is set to 600° C. or higher, and an average pore size of the carrier is set to 300 Å or more. | 10-15-2015 |
20150291899 | CO SHIFT CATALYST, CO SHIFT REACTOR, AND METHOD FOR PURIFYING GASIFICATION GAS - Provided is a CO shift catalyst that reforms carbon monoxide (CO) in a gas. The CO shift catalyst includes: an active component including either molybdenum (Mo) or iron (Fe) as a main component, and either nickel (Ni) or ruthenium (Ru) as an accessory component; a promoter component including any one kind of component selected from the group consisting of calcium (Ca), potassium (K), sodium (Na), phosphorus (P), and magnesium (Mg); and a carrier which carries the active component and the promoter component, and includes one or more kinds of oxides of titanium (Ti), zirconium (Zr), and cerium (Ce). | 10-15-2015 |
20150299592 | CO SHIFT CATALYST, CO SHIFT REACTOR, AND METHOD FOR PURIFYING GASIFICATION GAS - Provided is a CO shift catalyst that reforms carbon monoxide (CO) in a gas. The CO shift catalyst includes: an active component including either molybdenum (Mo) or iron (Fe) as a main component, and either nickel (Ni) or ruthenium (Ru) as an accessory component; and a carrier which carries the active component, and includes a composite oxide of two or more kinds of elements selected from the group consisting of titanium (Ti), zirconium (Zr), cerium (Ce), silica (Si), aluminum (Al), and lanthanum (La). | 10-22-2015 |
20160032202 | CO SHIFT CATALYST, CO SHIFT REACTION APPARATUS, AND METHOD FOR PURIFYING GASIFIED GAS - A CO shift catalyst according to the present invention reforms carbon monoxide (CO) in gas. The CO shift catalyst has one of molybdenum (Mo) or iron (Fe) as a main component and has an active ingredient having one of nickel (Ni) or ruthenium (Ru) as an accessory component and one or two or more kinds of oxides from among titanium (Ti), zirconium (Zr), and cerium (Ce) for supporting the active ingredient as a support. The temperature at the time of manufacturing and firing the catalyst is equal to or higher than 550° C. | 02-04-2016 |
Patent application number | Description | Published |
20090317672 | CO CONVERSION CATALYST FOR USE IN FUEL CELL IN DSS OPERATION, METHOD FOR PRODUCING THE SAME, AND FUEL CELL SYSTEM - To provide a CO conversion catalyst for use in a fuel cell in a DSS operation, which includes a Cu—Al-Ox catalyst, in which the Cu—Al-Ox catalyst has a boehmite phase formed in at least a part of the Cu—Al-Ox catalyst. The CO conversion catalyst has an improved degree of dispersion of Cu metal by the boehmite phase formed therein, and hence can be prevented from sintering of copper caused due to steam, thereby achieving improved durability with respect to the function as the CO conversion catalyst. | 12-24-2009 |
20120027659 | CO SHIFT CATALYST, CO SHIFT REACTOR, AND METHOD FOR PURIFYING GASIFIED GAS - A CO shift catalyst according to the present invention reforms carbon monoxide (CO) contained in gas. The CO shift catalyst is prepared from one or both of molybdenum (Mo) and cobalt (Co) as an active ingredient and an oxide of one of, or a mixture or a compound of, titanium (Ti), silicon (Si), zirconium (Zr), and cerium (Ce) as a carrier for supporting the active ingredient. The CO shift catalyst can be used in a halogen-resistant CO shift reactor ( | 02-02-2012 |
20120058036 | CO SHIFT CATALYST, METHOD FOR MANUFACTURING THE SAME, AND CO SHIFT REACTOR USING CO SHIFT CATALYST - A CO shift catalyst according to the present invention reforms carbon monoxide (CO) and is prepared from one or a mixture of platinum (Pt), ruthenium (Ru), iridium (Ir), and rhodium (Rh) as an active ingredient and at least one of titanium (Ti), aluminum (Al), zirconium (Zr), and cerium (Ce) as a carrier for supporting the active ingredient. The CO shift catalyst can be used in a halogen-resistant CO shift reactor ( | 03-08-2012 |
Patent application number | Description | Published |
20100211269 | MOTION CONTROL DEVICE OF VEHICLE - A motion control device of a vehicle comprises: a steering angle controller which controls a steering angle of a steering wheel so that an actual turning control variable becomes a target turning control variable; and a braking force controller which controls a vehicle braking force so that the actual turning control variable becomes the target turning control variable. The braking force controller selectively uses, as a steering angle signal for control, a first steering angle signal which reflects a steering angle compensation quantity compensated by the steering angle controller at the time of the oversteering of the vehicle is reflected, and a second steering angle signal which does not reflect the steering angle compensation quantity. | 08-19-2010 |
20100211271 | MOTION CONTROL DEVICE OF VEHICLE - A motion control device of a vehicle comprises: a steering angle controller which controls a steering angle of a steered wheel so that an actual turning controlling variable becomes a target turning controlling variable; and a braking force controller which controls a vehicle braking force so that the actual turning controlling variable becomes the target turning controlling variable. The control of the steering angle controller is stopped by detecting a timing with which the braking force controller detects an oversteering state of the vehicle to start a braking force control. | 08-19-2010 |
20100268420 | MOTION CONTROL DEVICE FOR VEHICLE - A motion control device for a vehicle, including a braking means for applying a brake torque to a wheel of the vehicle and maintaining a traveling stability of the vehicle by controlling the braking means, the motion control device for the vehicle, includes a steering angular velocity obtaining means for obtaining a steering angular velocity of the vehicle, a yaw angular acceleration obtaining means for obtaining a yaw angular acceleration of the vehicle, and a control means for controlling the brake torque on the basis of the steering angular velocity and the yaw angular acceleration. | 10-21-2010 |
20140136070 | MOTION CONTROL DEVICE FOR VEHICLE - A motion control device for a vehicle, including a braking means for applying a brake torque to a wheel of the vehicle and maintaining a traveling stability of the vehicle by controlling the braking means, the motion control device for the vehicle, includes a steering angular velocity obtaining means for obtaining a steering angular velocity of the vehicle, a yaw angular acceleration obtaining means for obtaining a yaw angular acceleration of the vehicle, and a control means for controlling the brake torque on the basis of the steering angular velocity and the yaw angular acceleration. | 05-15-2014 |