Patent application number | Description | Published |
20080231569 | Electro-optical device, driving circuit and electronic apparatus - It is possible to suppress the voltage amplitudes of data lines and to prevent deterioration in display quality by a simple configuration. | 09-25-2008 |
20090267121 | SOLID-STATE IMAGE PICKUP DEVICE - A solid-state image pickup device is provided which includes a substrate; a transistor formed on the substrate; a photoelectric conversion element including a first electrode connected to a drain or a source of the transistor, a semiconductor layer stacked on the first electrode, and a second electrode stacked on the semiconductor layer; an insulating layer disposed on the second electrode; and a bias line formed on the insulating layer to be connected to the second electrode, in which the insulating layer contains at least an inorganic insulating film, and the bias line is connected to the second electrode via a contact hole formed in the insulating layer, and a side surface of the semiconductor layer is in contact with the inorganic insulating film. | 10-29-2009 |
20090302202 | SOLID-STATE IMAGE PICKUP DEVICE - There is provided a solid-state image pickup device that has a plurality of scanning lines that extends in a predetermined direction, a plurality of data lines that extends in a direction for intersecting the scanning lines, and a plurality of bias lines within an image pickup area on a substrate. For each of a plurality of pixels disposed in positions corresponding to intersections of the plurality of scanning lines and the plurality of data lines, a field effect transistor that is controlled by the scanning line and a photoelectric conversion element that has a electrode electrically connected to the data line through the field effect transistor and a electrode electrically connected to the bias line are formed, and a constant electric potential line for electrostatic protection is formed on the substrate. For each of bias lines, a bias line electrostatic protection circuit having a protection diode. | 12-10-2009 |
20100225568 | ELECTRO-OPTICAL-APPARATUS SUBSTRATE, ELECTRO-OPTICAL APPARATUS AND ELECTRONIC APPLIANCE - An electro-optical-apparatus substrate includes, a substrate, a plurality of scanning lines and a plurality of data lines provided on the substrate, the scanning lines and data lines intersecting each other; a plurality of pixel electrodes provided at intersections of the plurality of scanning lines and the plurality of data lines; and a plurality of semiconductor devices that control on/off switching of the pixel electrodes, each of the plurality of semiconductor devices corresponding to the pixel electrode. At least one semiconductor device among the plurality of semiconductor devices is arranged so as to be at least partially covered by another pixel electrode that is adjacent to one pixel electrode that corresponds to the one semiconductor device when viewed on the substrate in plan view. | 09-09-2010 |
20110101436 | SUBSTRATE FOR SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE, AND ELECTRONIC APPARATUS - A substrate for a semiconductor device includes: a base substrate; a semiconductor layer that has a source region, a drain region, a plurality of channel regions, and at least one intermediate region; a source electrode being in contact with the source region; a drain electrode being in contact with the drain region; a gate electrode that overlaps the plurality of channel regions, the intermediate region, and each of a part of the source electrode and a part of the drain electrode; and a floating electrode being in contact with the intermediate region. The size of an area where the floating electrode and the gate electrode overlap each other is smaller than the sum of the size of an area where the source electrode and the gate electrode overlap each other and the size of an area where the drain electrode and the gate electrode overlap each other. | 05-05-2011 |
20110241003 | ELECTRO-OPTICAL DEVICE SUBSTRATE, ELECTRO-OPTICAL DEVICE, AND ELECTRONIC APPARATUS - In an electro-optical device substrate, first and second pixel switching elements each include a gate electrode formed of a first conductive film, a gate insulation film formed of a first insulation film, a semiconductor layer, a source electrode formed of a second conductive film, and a drain electrode formed of the second conductive film. A first storage capacitor includes a first storage capacitor electrode formed of the second conductive film, a protective film formed of a second insulation film so as to over at least the first storage capacitor electrode, and a pixel electrode formed so as to overlap with the first storage capacitor electrode at least partially with the protective film interposed therebetween. | 10-06-2011 |
20110266599 | SOLID-STATE IMAGE PICKUP DEVICE - A solid-state image pickup device is provided which includes a substrate; a transistor formed on the substrate; a photoelectric conversion element including a first electrode connected to a drain or a source of the transistor, a semiconductor layer stacked on the first electrode, and a second electrode stacked on the semiconductor layer; an insulating layer disposed on the second electrode; and a bias line formed on the insulating layer to be connected to the second electrode, in which the insulating layer contains at least an inorganic insulating film, and the bias line is connected to the second electrode via a contact hole formed in the insulating layer, and a side surface of the semiconductor layer is in contact with the inorganic insulating film. | 11-03-2011 |
20120099181 | ELECTROPHORETIC DISPLAY DEVICE, METHOD OF MANUFACTURING THE SAME, AND ELECTRONIC APPARATUS - An electrophoretic display device includes: a substrate; partition walls which partition a space on the substrate into a plurality of cells; an electrophoretic dispersion liquid with which the plurality of cells on the substrate is filled; a sealing film which is disposed so as to face the substrate with the partition walls interposed therebetween and seals the plurality of cells; and phase separation portions which are partially formed between upper surfaces of the partition walls and the sealing film and in which the electrophoretic dispersion liquid is subjected to phase separation. | 04-26-2012 |
20140016180 | ELECTROPHORETIC MATERIAL, ELECTROPHORESIS DISPLAY DEVICE, AND ELECTRONIC APPARATUS - In an electrophoretic material, first particles which are charged with a first polarity and second particles which are charged with a second polarity are dispersed in a solvent. A volume, which is obtained by dividing a volume of the solvent by a total number of particles, is called free volume, and a radius of a spherical space, which is occupied by sum of an average volume of the particles and the free volume, is called a free volume radius. A first particle average radius is greater than a second particle average radius. A difference between the free volume radius and the first particle average radius is greater than the second particle average radius. An electric charge amount of the second particles is greater than an electric charge amount of the first particles. | 01-16-2014 |
Patent application number | Description | Published |
20080251824 | Semiconductor memory device and manufacturing method thereof - A semiconductor memory device and a manufacturing method thereof are provided which enable cell-contact plugs to be formed at high yields and the yields of semiconductor memory devices to be improved in the manufacturing process. The semiconductor memory device includes: a semiconductor substrate; MOS transistors which are formed on a surface of the semiconductor substrate; a cell-contact plug which is made of poly-silicon film, is located between gates of the MOS transistors, and is connected to a source or a drain of one of the MOS transistors; a pad metal layer which is formed on the cell-contact plug; an interlayer dielectric film which is formed on the pad metal layer; a storage capacitor which is formed on the interlayer dielectric film; and a contact plug which is formed inside an opening which penetrates the interlayer dielectric film, and connects the storage capacitor with the pad metal layer. | 10-16-2008 |
20090061592 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A method of manufacturing the semiconductor device includes forming a first polysilicon film on an active region and an element isolation region made of a dielectric material provided in a semiconductor substrate; forming a hard mask on the first polysilicon film; etching the first polysilicon film, the semiconductor substrate in the active region and the dielectric material in the element isolation region by using the hard mask to form first and second gate trenches in the active region and the element isolation region, respectively; and filling the first and second gate trenches with a second polysilicon film before the hard mask is removed. | 03-05-2009 |
20090085108 | SEMICONDUCTOR DEVICE HAVING CELL TRANSISTOR WITH RECESS CHANNEL STRUCTURE - The present invention provides a semiconductor device comprising: a dual-gate peripheral transistor having a transistor structure of surface channel nMOSFET and a transistor structure of surface channel pMOSFET; and a cell transistor having an nMOSFET structure with a recess channel structure, a gate electrode of the cell transistor having an N-type polysilicon layer which contains of N-type impurities at an approximately constant concentration. | 04-02-2009 |
20090148994 | Method of manufacturing semiconductor device with recess gate transistor - A method of manufacturing a semiconductor device includes forming a plurality of recesses in a semiconductor substrate, forming a gate insulating film in the plurality of recesses, and a plurality of gate electrodes on the gate insulating film in the plurality of recesses, forming an insulating layer on the semiconductor substrate and the plurality of gate electrodes, forming a plurality of contact holes in the insulating layer, the contact holes being formed between adjacent ones of the plurality of gate electrodes, implanting a first impurity into the semiconductor substrate through the plurality of contact holes to form each of source and drain regions in contact with the gate insulating film. | 06-11-2009 |
20100127317 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor device includes a memory cell array region including a plurality of memory cells, an annular groove surrounding the memory cell array region, a protective insulating film covering the inner wall of the annular groove, and a conductor filling the annular groove. | 05-27-2010 |
20110081761 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A method of manufacturing a semiconductor device may include, but is not limited to the following processes. A first recess is formed in a semiconductor substrate to define an active region on the semiconductor substrate. The active region includes a protruding portion of the semiconductor substrate surrounded by the first recess. The protruding portion has a sloped side surface. A first insulating film that fills the first recess is formed. A gate recess is formed in the active region to form a thin film portion that upwardly extends. The thin film portion is positioned between the gate recess and the first insulating film. The thin film portion is a part of the protruding portion. An upper part of the thin film portion is removed by wet-etching to adjust a height of the thin film portion. | 04-07-2011 |
20110266603 | SEMICONDUCTOR DEVICE - A semiconductor device may include, but is not limited to: a semiconductor substrate; a memory capacitor; and a first compensation capacitor. The semiconductor substrate has at least first and second regions. The memory capacitor is positioned over the first region. The memory capacitor may include, but is not limited to: a first lower electrode; and a first dielectric film covering inner and outer surfaces of the first lower electrode. The first compensation capacitor is positioned over the second region. The first compensation capacitor includes, but is not limited to: a second lower electrode; a second dielectric film covering an inner surface of the second lower electrode; and a first insulating film covering an outer surface of the second lower electrode. | 11-03-2011 |
Patent application number | Description | Published |
20080224027 | Display device - A display device according to an embodiment of the invention includes a display panel, a drive circuit that drives the display panel, an illuminating unit that illuminates the display panel, a photosensing section Ls having an ambient light photosensor Ts that senses the brightness of ambient light and a capacitor Cw that is charged with a predetermined reference voltage via a first switch S | 09-18-2008 |
20080297466 | LIQUID CRYSTAL DISPLAY, ELECTRONIC DEVICE, AND METHOD FOR CONTROLLING BRIGHTNESS OF ILLUMINATION UNIT OF LIQUID CRYSTAL DISPLAY - A liquid crystal display according to an embodiment of the present invention includes a liquid crystal display panel, an illumination unit for the liquid crystal display panel, a plurality of photodetectors, and a control unit Cnt to control the brightness of the illumination unit. The photodetectors are TFT ambient light photosensors LS | 12-04-2008 |
20090085854 | DISPLAY UNIT - The invention provides a display unit that has a display area and first and second photodetectors | 04-02-2009 |
20100052713 | DISPLAY DEVICE AND TEST PROBE FOR TESTING DISPLAY DEVICE - A display device is provided with a light detection unit that detects the intensity of ambient light and is capable of automatically controlling the luminosity of an illumination unit and/or the luminosity of the display device on the basis of the intensity of ambient light detected by the light detection unit. Moreover, the display device makes it possible to easily conduct a test on light-sensor characteristics. | 03-04-2010 |
20110024754 | ACTIVE MATRIX SUBSTRATE, ELECTRO-OPTICAL DEVICE, AND ELECTRONIC APPARATUS - An active matrix substrate including: a substrate; a display section having a pixel circuit formed on the substrate; and a protection circuit connected to an interconnection of the display section. The protection circuit has a diode-connected transistor, an insulating layer provided so as to cover the transistor, and a light-shielding layer provided in a region above the insulating layer so as to face at least a channel region in the transistor and electrically connected to at least any one of a gate electrode and a source electrode of the transistor. | 02-03-2011 |
20110134162 | METHOD OF DRIVING ELECTROPHORETIC DISPLAY DEVICE, ELECTROPHORETIC DISPLAY DEVICE, AND ELECTRONIC EQUIPMENT - A method of driving an electrophoretic display device which includs a pair of substrates, an electrophoretic element disposed between the pair of substrates, and a display portion with a plurality of pixels arranged thereon, and has an electrode in which an image signal is input for each pixel, including a reset waveform input process in which, when a display image of the display portion is renewed from a first image to a second image, after displaying the first image and before displaying the second image, a prescribed image signal corresponding to an image different from the second image is input to the electrode. | 06-09-2011 |