Patent application number | Description | Published |
20080213158 | Apparatus for production of crystal of group III element nitride and process for producing crystal of group III element nitride - A manufacturing apparatus of Group III nitride crystals and a method for manufacturing Group III nitride crystals are provided, by which high quality crystals can be manufactured. For instance, crystals are grown using the apparatus of the present invention as follows. A crystal raw material ( | 09-04-2008 |
20080315231 | LIGHT SOURCE, OPTICAL PICKUP, AND ELECTRONIC APPARATUS - A light source of the present invention includes: a semiconductor light emitting device which has a light emitting face and emits light from part of the light emitting face; a container which has a light transmitting window for transmitting the light and accommodates the semiconductor light emitting device; and a gettering portion for performing gettering of a material containing at least one of carbon and silicon. The gettering portion is positioned, in the container, in a region other than the part of the light emitting face of the semiconductor light emitting device. | 12-25-2008 |
20090002265 | Image Display Device and Image Display System - An image display device and an image display system which can establish visible light communication without interfering with an image displayed at a predetermined frame rate are provided. A controller | 01-01-2009 |
20090194763 | SEMICONDUCTOR ELEMENT, METHOD FOR MANUFACTURING THE SEMICONDUCTOR ELEMENT, ELECTRONIC DEVICE AND METHOD FOR MANUFACTURING THE ELECTRONIC DEVICE - A manufacturing method of a semiconductor element provided with a semiconductor layer containing a crystal of an organic semiconductor material of the invention includes the steps of (i) forming a frame ( | 08-06-2009 |
20090205561 | METHOD FOR PRODUCING SILICON CARBIDE (SiC) CRYSTAL AND SILICON CARBIDE (SiC) CRYSTAL OBTAINED BY THE SAME - A production method is provided that enables to produce a large-sized bulk silicon carbide (SiC) crystal of high quality at low cost. A large-sized bulk silicon carbide (SiC) crystal of high quality can be obtained at a lower temperature by reacting silicon (Si) and carbon (C) produced from a lithium carbide such as dilithium acetylide (Li | 08-20-2009 |
20090294909 | N-type group III nitride-based compound semiconductor and production method therefor - An object of the present invention is to realize, by the flux process, the production of a high-quality n-type semiconductor crystal having high concentration of electrons. The method of the invention for producing an n-type Group III nitride-based compound semiconductor by the flux process, the method including preparing a melt by melting at least a Group III element by use of a flux; supplying a nitrogen-containing gas to the melt; and growing an n-type Group III nitride-based compound semiconductor crystal on a seed crystal from the melt. In the method, carbon and germanium are dissolved in the melt, and germanium is incorporated as a donor into the semiconductor crystal, to thereby produce an n-type semiconductor crystal. | 12-03-2009 |
20100020291 | 2-DIMENSIONAL IMAGE DISPLAY DEVICE, ILLUMINATION LIGHT SOURCE AND EXPOSURE ILLUMINATION DEVICE - A 2-dimensional beam scan unit ( | 01-28-2010 |
20100078606 | PROCESS FOR PRODUCING GROUP III ELEMENT NITRIDE CRYSTAL, AND GROUP-III ELEMENT NITRIDE CRYSTAL - A method for producing a high-quality group-III element nitride crystal at a high crystal growth rate, and a group-III element nitride crystal are provided. The method includes the steps of placing a group-III element, an alkali metal, and a seed crystal of group-III element nitride in a crystal growth vessel, pressurizing and heating the crystal growth vessel in an atmosphere of nitrogen-containing gas, and causing the group-III element and nitrogen to react with each other in a melt of the group-III element, the alkali metal and the nitrogen so that a group-III element nitride crystal is grown using the seed crystal as a nucleus. A hydrocarbon having a boiling point higher than the melting point of the alkali metal is added before the pressurization and heating of the crystal growth vessel. | 04-01-2010 |
20100230713 | SEMICONDUCTOR LIGHT EMITTING ELEMENT, GROUP III NITRIDE SEMICONDUCTOR SUBSTRATE AND METHOD FOR MANUFACTURING SUCH GROUP III NITRIDE SEMICONDUCTOR SUBSTRATE - An object of the present invention is to obtain, with respect to a semiconductor light-emitting element using a group III nitride semiconductor substrate, a semiconductor light-emitting element having an excellent light extraction property by selecting a specific substrate dopant and controlling the concentration thereof. The semiconductor light-emitting element comprises a substrate composed of a group III nitride semiconductor comprising germanium (Ge) as a dopant, an n-type semiconductor layer composed of a group III nitride semiconductor formed on the substrate, an active layer composed of a group III nitride semiconductor formed on the n-type semiconductor layer, and a p-type semiconductor layer composed of a group III nitride semiconductor formed on the active layer in which the substrate has a germanium (Ge) concentration of 2×10 | 09-16-2010 |
20100247418 | Method for producing group III nitride semiconductor - An object of the present invention is to effectively add Ge in the production of GaN through the Na flux method. In a crucible, a seed crystal substrate is placed such that one end of the substrate remains on the support base, whereby the seed crystal substrate remains tilted with respect to the bottom surface of the crucible, and gallium solid and germanium solid are placed in the space between the seed crystal substrate and the bottom surface of the crucible. Then, sodium solid is placed on the seed crystal substrate. Through employment of this arrangement, when a GaN crystal is grown on the seed crystal substrate through the Na flux method, germanium is dissolved in molten gallium before formation of a sodium-germanium alloy. Thus, the GaN crystal can be effectively doped with Ge. | 09-30-2010 |
20110012070 | GROUP-III ELEMENT NITRIDE CRYSTAL PRODUCING METHOD AND GROUP-III ELEMENT NITRIDE CRYSTAL - A method for producing a high-quality group-III element nitride crystal at a high crystal growth rate, and a group-III element nitride crystal are provided. The method includes the steps of placing a group-III element, an alkali metal, and a seed crystal of group-III element nitride in a crystal growth vessel, pressurizing and heating the crystal growth vessel in an atmosphere of nitrogen-containing gas, and causing the group-III element and nitrogen to react with each other in a melt of the group-III element, the alkali metal and the nitrogen so that a group-III element nitride crystal is grown using the seed crystal as a nucleus. A hydrocarbon having a boiling point higher than the melting point of the alkali metal is added before the pressurization and heating of the crystal growth vessel. | 01-20-2011 |
20110018911 | IMAGE DISPLAY DEVICE AND IMAGE DISPLAY SYSTEM - An image display device and an image display system which can establish visible light communication without interfering with an image displayed at a predetermined frame rate are provided. A controller | 01-27-2011 |
20110292350 | 2-DIMENSIONAL IMAGE DISPLAY DEVICE, ILLUMINATION LIGHT SOURCE AND EXPOSURE ILLUMINATION DEVICE - A 2-dimensional beam scan unit reflects emission beams from a red laser light source, a green laser light source and a blue laser light source and scans in a 2-dimensional direction. Diffusion plates diffuse the respective light beams scanned in the 2-dimensional direction to introduce them to corresponding spatial light modulation elements. The respective spatial light modulation elements modulate the respective lights in accordance with video signals of the respective colors. A dichroic prism multiplexes the lights of the three colors after the modulation and introduces the multiplexed lights to a projection lens so that a color image is displayed on a screen. Since the 2-dimensional light emitted from the beam scan unit is diffused to illuminate the spatial light modulation element, it is possible to change the optical axis of the beam emerging from the light diffusion member for irradiating the spatial light modulation element moment by moment, thereby effectively suppressing speckle noise. | 12-01-2011 |
20120003446 | NITRIDE CRYSTAL AND METHOD FOR PRODUCING THE SAME - A nitride crystal which encircles an outer periphery of a seed crystal, the nitride crystal in an embodiment includes: a first partial region, and a second partial region that has optical characteristics different from those of the first partial region and has optical characteristics which indicate the crystal orientation. | 01-05-2012 |
20120137961 | METHOD FOR GROWING SINGLE CRYSTAL OF GROUP III METAL NITRIDE AND REACTION VESSEL FOR USE IN SAME - Materials of a nitride single crystal of a metal belonging to III group and a flux are contained in a crucible, which is contained in a reaction container, the reaction container is contained in an outer container, the outer container is contained in a pressure container, and nitrogen-containing atmosphere is supplied into the outer container and melt is generated in the crucible to grow a nitride single crystal of a metal belonging to III group. The reaction container includes a main body containing the crucible and a lid. The main body includes a side wall having a fitting face and a groove opening at the fitting face and a bottom wall. The lid has an upper plate part including a contact face for the fitting face of the main body and a flange part extending from the upper plate part and surrounding an outer side of said side wall. | 06-07-2012 |
20120168695 | GROUP-III ELEMENT NITRIDE CRYSTAL PRODUCING METHOD AND GROUP-III ELEMENT NITRIDE CRYSTAL - A method for producing a high-quality group-III element nitride crystal at a high crystal growth rate, and a group-III element nitride crystal are provided. The method includes the steps of placing a group-III element, an alkali metal, and a seed crystal of group-III element nitride in a crystal growth vessel, pressurizing and heating the crystal growth vessel in an atmosphere of nitrogen-containing gas, and causing the group-III element and nitrogen to react with each other in a melt of the group-III element, the alkali metal and the nitrogen so that a group-III element nitride crystal is grown using the seed crystal as a nucleus. A hydrocarbon having a boiling point higher than the melting point of the alkali metal is added before the pressurization and heating of the crystal growth vessel. | 07-05-2012 |
20120183006 | OPTICAL DEVICE, LASER BEAM SOURCE, LASER APPARATUS AND METHOD OF PRODUCING OPTICAL DEVICE - After forming domain inverted layers | 07-19-2012 |
20140030549 | GROUP III ELEMENT NITRIDE CRYSTAL PRODUCING METHOD AND GROUP-III ELEMENT NITRIDE CRYSTAL - A method for producing a high-quality group-III element nitride crystal at a high crystal growth rate, and a group-III element nitride crystal are provided. The method includes the steps of placing a group-III element, an alkali metal, and a seed crystal of group-III element nitride in a crystal growth vessel, pressurizing and heating the crystal growth vessel in an atmosphere of nitrogen-containing gas, and causing the group-III element and nitrogen to react with each other in a melt of the group-III element, the alkali metal and the nitrogen so that a group-III element nitride crystal is grown using the seed crystal as a nucleus. A hydrocarbon having a boiling point higher than the melting point of the alkali metal is added before the pressurization and heating of the crystal growth vessel. | 01-30-2014 |