Patent application number | Description | Published |
20130189533 | RESIST UNDERLAYER FILM FORMING COMPOSITION FOR LITHOGRAPHY CONTAINING POLYETHER STRUCTURE-CONTAINING RESIN - There is provided a resist underlayer film forming composition for forming a resist underlayer film providing heat resistance properties and hardmask characteristics. A resist underlayer film forming composition for lithography, comprising: a polymer containing a unit structure of Formula (1): | 07-25-2013 |
20130280913 | COMPOSITION FOR FORMING A RESIST UNDERLAYER FILM INCLUDING HYDROXYL GROUP-CONTAINING CARBAZOLE NOVOLAC RESIN - There is provided a composition for forming a resist underlayer film having heat resistance for use in a lithography process in semiconductor device production. A composition for forming a resist underlayer film, comprising a polymer that contains a unit structure of formula (1) and a unit structure of formula (2) in a proportion of 3 to 97:97 to 3 in molar ratio: | 10-24-2013 |
20140106570 | COMPOSITION FOR FORMING ORGANIC HARD MASK LAYER FOR USE IN LITHOGRAPHY CONTAINING POLYMER HAVING ACRYLAMIDE STRUCTURE - Whereas, conventionally, ashing had been used at the time of removal, the present invention provides a material for forming an organic hard mask that can be removed by an alkaline aqueous solution, and thus can be expected to reduce damage to the substrate at the time of the removal. A composition for forming an organic hard mask layer comprising: a polymer (A) including a structural unit of Formula (1) and a structural unit of Formula (2); a crosslinkable compound (B) including at least two of blocked isocyanate groups, methylol groups, or C | 04-17-2014 |
20140235059 | DIARYLAMINE NOVOLAC RESIN - A novel diarylamine novolac resin such as a phenylnaphthylamine novolac resin, and further a resist underlayer film-forming composition in which the resin is used in a lithography process for manufacturing a semiconductor device. A polymer including a unit structure (A) of Formula (1): | 08-21-2014 |
20140235060 | RESIST UNDERLAYER FILM-FORMING COMPOSITION WHICH CONTAINS ALICYCLIC SKELETON-CONTAINING CARBAZOLE RESIN - There is provided a resist underlayer film used in lithography process that has a high n value and a low k value, and can effectively reduce reflection of light having a wavelength of 193 nm from the substrate in a three-layer process in which the resist underlayer film is used in combination with a silicon-containing intermediate layer. A resist underlayer film-forming composition used in lithography process including: a polymer containing a unit structure including a product obtained by reaction of a condensed heterocyclic compound and a bicyclo ring compound. The condensed heterocyclic compound is a carbazole compound or a substituted carbazole compound. The bicyclo ring compound is dicyclopentadiene, substituted dicyclopentadiene, tetracyclo[4.4.0.1 | 08-21-2014 |
20150044876 | RESIST UNDERLAYER FILM FORMING COMPOSITION CONTAINING PHENYLINDOLE-CONTAINING NOVOLAC RESIN - A composition for forming a resist underlayer film having heat resistance, which is used for a lithography process of semiconductor device production. A resist underlayer film forming composition including a polymer having a unit structure of Formula (1): | 02-12-2015 |
20150184018 | RESIST UNDERLAYER FILM FORMING COMPOSITION THAT CONTAINS NOVOLAC RESIN HAVING POLYNUCLEAR PHENOL - There is provided a composition for forming a resist underlayer film which has high dry-etching resistance and wiggling resistance, and achieves excellent planarizing properties for a semiconductor substrate surface having level differences or irregular portions. A resist underlayer film-forming composition including a phenol novolac resin that is obtained by causing a compound that has at least three phenolic groups, in which each of the phenolic groups has a structure bonded to a tertiary carbon atom or has a structure bonded to a quaternary carbon atom to which a methyl group binds, to react with an aromatic aldehyde or an aromatic ketone in the presence of an acid catalyst. The phenol novolac resin preferably contains a unit structure of Formula (1), a unit structure of Formula (2), a unit structure of Formula (3), a unit structure of Formula (4), or a combination of these unit structures: | 07-02-2015 |
20150194312 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE USING ORGANIC UNDERLAYER FILM FORMING COMPOSITION FOR SOLVENT DEVELOPMENT LITHOGRAPHY PROCESS - A method of manufacturing a semiconductor device by use of an underlayer film material can form a good pattern without deteriorating the resolution limit. A method of manufacturing a semiconductor device, including: forming an organic underlayer film on a semiconductor substrate; forming an inorganic hard mask on organic underlayer film; forming a resist film on inorganic hard mask; performing irradiation of light or electron beam and solvent development to form a resist pattern; etching inorganic hard mask using resist pattern; etching organic underlayer film using patterned inorganic hard mask; and processing semiconductor substrate using patterned organic underlayer film, wherein the organic underlayer film is an organic underlayer film obtained by applying and heating an organic underlayer film forming composition containing a compound including an organic group having a functional group selected from group consisting of epoxy group, isocyanate group, blocked isocyanate group, and benzocyclobutene ring group, and an organic solvent. | 07-09-2015 |