Patent application number | Description | Published |
20080277692 | SEMICONDUCTOR DEVICE - A semiconductor device includes: a first semiconductor layer made of an Al | 11-13-2008 |
20090200576 | SEMICONDUCTOR DEVICE - A semiconductor device includes: a first semiconductor layer including Al | 08-13-2009 |
20100314666 | NITRIDE SEMICONDUCTOR DEVICE - A nitride semiconductor device includes: a first layer made of a first nitride semiconductor; a second layer provided on the first layer and made of a second nitride semiconductor having a larger band gap than the first nitride semiconductor; a first electrode electrically connected to the second layer; a second electrode provided on the second layer and juxtaposed to the first electrode in a first direction; and a floating electrode provided on the second layer, the floating electrode including: a portion sandwiched by the second electrode in a second direction orthogonal to the first direction; and a portion protruding from the second electrode toward the first electrode. | 12-16-2010 |
20110204380 | NITRIDE-BASED FET - According to an embodiment, in a nitride-based FET, a protrusion portion is formed at an upper portion of an undoped GaN layer by second recess etching. On the protrusion portion, an undoped AlGaN layer is provided which is formed by first recess etching the upper portion of the undoped AlGaN layer. A multilayer portion is composed of the protrusion portion of the undoped GaN layer, the undoped AlGaN layer, and an insulating film. A trench portion is formed by recess etching the insulating film, the undoped AlGaN layer and a surface of the undoped GaN layer. A gate insulating film is formed on the multilayer portion and the trench portion. A gate electrode is formed on the gate insulating film so as to cover the trench portion. A film thickness of the insulting film is set larger than that of the gate insulating film. | 08-25-2011 |
20110272708 | NITRIDE SEMICONDUCTOR DEVICE - According to one embodiment, a nitride semiconductor device includes a first, a second and a third semiconductor layer, a first and a second main electrode and a control electrode. The first layer made of a nitride semiconductor of a first conductivity type is provided on a substrate. The second layer made of a nitride semiconductor of a second conductivity type is provided on the first layer. The third layer made of a nitride semiconductor is provided on the second layer. The first electrode is electrically connected with the second layer. The second electrode is provided at a distance from the first electrode and electrically connected with the second layer. The control electrode is provided within a first trench via an insulating film. The first trench is disposed between the first and the second main electrodes, penetrates the third and the second layers, and reaches the first layer. | 11-10-2011 |
20110309413 | SEMICONDUCTOR DEVICE - A semiconductor device includes: a first semiconductor layer including Al | 12-22-2011 |
20120187413 | NITRIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME - According to one embodiment, a nitride semiconductor device includes a first semiconductor, a second semiconductor layer, a third semiconductor layer, a fourth semiconductor layer, a first electrode, a second electrode and a third electrode. The first, second and fourth semiconductor layers include a nitride semiconductor. The second semiconductor layer is provided on the first semiconductor layer, has a band gap not less than that of the first semiconductor layer. The third semiconductor layer is provided on the second semiconductor layer. The third semiconductor layer is GaN. The fourth semiconductor layer is provided on the third semiconductor layer to have an interspace on a part of the third semiconductor layer, has a band gap not less than that of the second semiconductor layer. The first electrode is provided on a portion of the third semiconductor layer. The fourth semiconductor layer is not provided on the portion. | 07-26-2012 |
20120241751 | NITRIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME - According to one embodiment, a nitride semiconductor device includes a first semiconductor layer, a second semiconductor layer, a first electrode, a second electrode, a third electrode, a first insulating film and a second insulating film. The first semiconductor layer includes a nitride semiconductor. The second semiconductor layer is provided on the first layer, includes a nitride semiconductor, and includes a hole. The first electrode is provided in the hole. The second electrode is provided on the second layer. The third electrode is provided on the second layer so that the first electrode is disposed between the third and second electrodes. The first insulating film is provided between the first electrode and an inner wall of the hole and between the first and second electrodes, and is provided spaced from the third electrode. The second insulating film is provided in contact with the second layer between the first and third electrodes. | 09-27-2012 |
20130062671 | NITRIDE SEMICONDUCTOR DEVICE - A nitride semiconductor device includes a first semiconductor layer, a second semiconductor layer, a conductive substrate, a first electrode, a second electrode, and a control electrode. The second semiconductor layer is directly bonded to the first semiconductor layer. The conductive substrate is provided on and electrically connected to the first semiconductor layer. The first electrode and the second electrode are provided on and electrically connected to a surface of the second semiconductor layer on a side opposite to the first semiconductor layer. The control electrode is provided on the surface of the second semiconductor layer between the first electrode and the second electrode. The first electrode is electrically connected to a drain electrode of a MOSFET formed of Si. The control electrode is electrically connected to a source electrode of the MOSFET. The conductive substrate is electrically connected to a gate electrode of the MOSFET. | 03-14-2013 |
20130069117 | NITRIDE SEMICONDUCTOR DEVICE - A nitride semiconductor device includes a substrate, a first In | 03-21-2013 |
20130153966 | SEMICONDUCTOR DEVICE - A semiconductor device includes: a first semiconductor layer made of an Al | 06-20-2013 |
20130240899 | NITRIDE SEMICONDUCTOR DEVICE - According to one embodiment a nitride semiconductor device includes a first, a second and a third semiconductor layer, a first and a second main electrode and a control electrode. The first layer made of a nitride semiconductor of a first conductivity type is provided on a substrate. The second layer made of a nitride semiconductor of a second conductivity type is provided on the first layer. The third layer made of a nitride semiconductor is provided on the second layer. The first electrode is electrically connected with the second layer. The second electrode is provided at a distance from the first electrode and electrically connected with the second layer. The control electrode is provided within a first trench via an insulating film. The first trench is disposed between the first and the second main electrodes, penetrates the third and the second layers, and reaches the first layer. | 09-19-2013 |
20130248928 | SEMICONDUCTOR DEVICE HAVING NITRIDE LAYERS - According to one embodiment, a semiconductor device having a semiconductor substrate, first to fourth semiconductor layers of nitride, first to third electrodes and a gate electrode is provided. The first semiconductor layer is provided directly on the semiconductor substrate or on the same via a buffer layer. The second semiconductor layer is provided so as to be spaced apart from the first semiconductor layer. The third semiconductor layer is provided on the second semiconductor layer and has a band gap wider than that of the second semiconductor layer. The fourth semiconductor layer insulates the first and second semiconductor layers. The first electrode forms an ohmic junction with the first to the third semiconductor layers. The second electrode is provided on the third semiconductor layer. The gate electrode is provided between the first and the second electrodes. The third electrode forms a Schottky junction with the first semiconductor layer. | 09-26-2013 |
20130248931 | NITRIDE SEMICONDUCTOR DEVICE - According to one embodiment, a nitride semiconductor device has an electroconductive substrate, a first nitride semiconductor layer provided directly on the electroconductive substrate or provided on the electroconductive substrate through a buffer layer and formed of a non-doped nitride semiconductor, a second nitride semiconductor layer provided on the first nitride semiconductor layer and formed of a non-doped or n-type nitride semiconductor having a band gap wider than that of the first nitride semiconductor layer, a heterojunction field effect transistor having a source electrode, a drain electrode, and a gate electrode, a Schottky barrier diode having an anode electrode and a cathode electrode, first and second element isolation insulating layers, and a frame electrode. The frame electrode is electrically connected to the source electrode and the electroconductive substrate, and surrounds outer peripheries of the heterojunction field effect transistor and the Schottky barrier diode. | 09-26-2013 |
20130341641 | RECTIFIER CIRCUIT - A rectifier circuit has a rectifier element and a unipolar field-effect transistor connected in series between a first terminal and a second terminal. The rectifier element comprises a first electrode and a second electrode disposed in a direction of a forward current flowing from the first terminal to the second terminal. The field-effect transistor has a gate electrode having a potential identical to a potential at the first electrode, and a source electrode and a drain electrode connected in series to the rectifier element and passing a current depending on the potential at the gate electrode. A breakdown voltage between the gate electrode and drain electrode of the field-effect transistor in a reverse bias mode, where a potential at the second terminal is higher than a potential at the first terminal, being set higher than a breakdown voltage of the rectifier element. | 12-26-2013 |
20140035004 | SEMICONDUCTOR DEVICE - According to one embodiment, a semiconductor device has a first nitride semiconductor layer, a second nitride semiconductor layer provided on the first nitride semiconductor layer and formed of a non-doped or n-type nitride semiconductor having a band gap wider than that of the first nitride semiconductor layer, a heterojunction field effect transistor having a source electrode, a drain electrode, and a gate electrode, a Schottky barrier diode having an anode electrode and a cathode electrode, and first and second element isolation insulating layers. The first element isolation insulating layer has a first end contacting with the drain electrode and the anode electrode, and a second end located in the first nitride semiconductor layer. The second element isolation insulating layer has a third end contacting with the cathode electrode, and a fourth end located in the first nitride semiconductor layer. | 02-06-2014 |
20140077217 | SEMICONDUCTOR DEVICE - According to one embodiment, a semiconductor device includes a substrate, a first semiconductor region, a second semiconductor region, a first electrode, a first electrode and a conducting section. The substrate includes a conductive region and has a first surface. The first semiconductor region is provided on the first surface side of the substrate and includes Al | 03-20-2014 |
20140077263 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME - According to one embodiment, a semiconductor device includes a first nitride semiconductor layer, a second nitride semiconductor layer, a third nitride semiconductor layer, an insulating film, an ohmic electrode, and a Schottky electrode. A surface region of the third nitride semiconductor layer between the ohmic electrode and the Schottky electrode contains an element heterogeneous with the constituent element of the third nitride semiconductor layer at a higher concentration than a region of the third nitride semiconductor layer of the second nitride semiconductor layer side. | 03-20-2014 |
20140097505 | SEMICONDUCTOR DEVICE HAVING NITRIDE LAYERS - According to one embodiment, a second nitride semiconductor layer is provided on a first nitride semiconductor layer and has a band gap wider than that of the first nitride semiconductor layer. A third nitride semiconductor layer is provided above the second nitride semiconductor layer. A fourth nitride semiconductor layer is provided on the third nitride semiconductor layer and has a band gap wider than that of the third nitride semiconductor layer. A fifth nitride semiconductor layer is provided between the second and the third nitride semiconductor layers. A first electrode contacts the second, the third and the fourth nitride semiconductor layers. A second electrode is provided on the fourth nitride semiconductor layer. A gate electrode is provided on a gate insulating layer between the first and the second electrodes. A third electrode is in contact with the second nitride semiconductor layer. | 04-10-2014 |
20140246700 | NITRIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME - According to one embodiment, a nitride semiconductor device includes a first semiconductor, a second semiconductor layer, a third semiconductor layer, a fourth semiconductor layer, a first electrode, a second electrode and a third electrode. The first, second and fourth semiconductor layers include a nitride semiconductor. The second semiconductor layer is provided on the first semiconductor layer, has a band gap not less than that of the first semiconductor layer. The third semiconductor layer is provided on the second semiconductor layer. The third semiconductor layer is GaN. The fourth semiconductor layer is provided on the third semiconductor layer to have an interspace on a part of the third semiconductor layer, has a band gap not less than that of the second semiconductor layer. The first electrode is provided on a portion of the third semiconductor layer. The fourth semiconductor layer is not provided on the portion. | 09-04-2014 |
20140284610 | SEMICONDUCTOR DEVICE - According to an embodiment, a semiconductor device includes a conductive substrate, a Schottky barrier diode, and a field-effect transistor. The Schottky barrier diode is mounted on the conductive substrate and includes an anode electrode and a cathode electrode. The anode electrode is electrically connected to the conductive substrate. The field-effect transistor is mounted on the conductive substrate and includes a source electrode, a drain electrode, and a gate electrode. The source electrode of the field-effect transistor is electrically connected to the cathode electrode of the Schottky barrier diode. The gate electrode of the field-effect transistor is electrically connected to the anode electrode of the Schottky barrier diode. | 09-25-2014 |