Patent application number | Description | Published |
20090103595 | Device and method for transmitting/receiving pulse signal - A pulse signal transmitting/receiving device is provided. The device includes a signal generating module for generating a transmitting signal including an amplitude-modulated chirp signal, and a reference signal including a chirp signal having a frequency that changes similarly to that of the transmitting signal, a transmitting module for transmitting a pulse having approximately the same waveform as that of the transmitting signal, a receiving module for receiving an echo signal that is the transmitting pulse reflected from a detection target object, a compensating module for extending a dynamic range of the echo signal received by the receiving module, and a pulse compressing module for outputting a pulse-compressed echo signal, wherein the pulse compression is performed by a correlation calculation between the echo signal having the dynamic range extended by the compensating module, and the reference signal. | 04-23-2009 |
20090201766 | UNDERWATER DETECTOR - The present disclosure provides an underwater detector including a power source for applying a predetermined voltage, a voltage control circuit for controlling the voltage based on a control signal, a gate signal generating module for outputting a gate signal, a switching circuit for outputting a reference signal based on the voltage controlled by the voltage control circuit and the gate signal outputted from the gate signal generating module, and a transducer for transmitting an ultrasonic signal underwater, an envelope of which being controlled based on a waveform of the control signal by being applied with the reference signal. | 08-13-2009 |
20100309753 | FISH FINDER - This disclosure provides a fish finder, which includes a transmission module and a reception module, for outputting an ultrasonic wave underwater, receiving an echo, and outputting a reception signal corresponding to an intensity of the received echo, a control module for generating echo data corresponding to a depth based on the reception signal, a display module for displaying the echo data, and a user interface for receiving a user's operation. The control module causes the display module to display the echo data so that the echo data is displayed in two or more display screens. At least one display screen displays an area having a color different from a background color. A part of the echo data at a depth range corresponding to a height of the area is displayed in the other display screen so as to expand the echo data in a depth direction. The user interface specifies a position and a size of the area via the user's operation. | 12-09-2010 |
20110187579 | METHOD AND DEVICE FOR TRANSMISSION, METHOD AND DEVICE FOR RECEPTION, AND METHOD AND DEVICE FOR DETECTING TARGET OBJECT - This disclosure provides a transmission device, which includes a signal generating module for generating two or more kinds of pulse-shaped signals of mutually different pulse widths, and an antenna for emitting the pulse-shaped signals to the exterior. For the two or more kinds of pulse-shaped signals generated by the signal generating module, an order of two or more kinds of pulse-shaped signals included in a predetermined time frame differs from an order of two or more kinds of pulse-shaped signals included in a different time frame. | 08-04-2011 |
20120139773 | DETECTION DEVICE, DETECTING METHOD AND DETECTION PROGRAM - This disclosure provides a device, which includes a transceiver for outputting a reception signal according to an echo intensity of a transmission signal, a reception signal monitoring module for monitoring an intensity of the reception signal based on a saturation condition, and a transmitting condition setting module for controlling a transmitting power according to the intensity of the reception signal monitored by the reception signal monitoring module. | 06-07-2012 |
20130342381 | SIGNAL PROCESSING DEVICE, SIGNAL PROCESSING METHOD, COMPUTER READABLE MEDIA STORING SIGNAL PROCESSING PROGRAM AND RADAR APPARATUS - A signal processing device is provided. The device includes a signal input unit for receiving reception signals obtained from transmission signals reflecting on one or more objects, a pulse compressor for pulse compressing the reception signals, an interference detector for detecting a reception signal caused by interference, from the pulse-compressed reception signals, a signal level controlling module for controlling a level of the detected reception signal, and an interpolation processing module for interpolating the level-controlled reception signal in an azimuth direction. | 12-26-2013 |
20140118184 | RADAR DEVICE AND VELOCITY CALCULATION METHOD - It is an object of the present invention to provide a radar device and a velocity calculation method with which velocity can be calculated more accurately. A radar device | 05-01-2014 |
Patent application number | Description | Published |
20090296789 | TRANSCEIVING DEVICE OF PULSE SIGNAL - A transceiving device includes a transmission signal generating module for generating a transmission signal that is frequency-modulated by a predetermined frequency sweep width, a transceiver module for transmitting a pulse signal having substantially the same waveform as a waveform of the transmission signal and receiving an echo signal corresponding to the transmission signal from a detection range, and a pulse-compression filter for pulse-compressing the echo signal received by the transceiver module. The pulse-compression filter has an input/output characteristic. The characteristic has, when the pulse-compression filter is inputted with an input signal having substantially the same waveform as the waveform of the transmission signal, a window function shape such that a phase spectrum of an output signal corresponding to the input signal is linear and an amplitude spectrum of the output signal does not have a frequency component other than a frequency band with which a frequency sweep is carried out. | 12-03-2009 |
20090303835 | UNDERWATER DETECTION DEVICE - An underwater detection device includes a transceiver module for transmitting underwater an ultrasonic pulse signal that is frequency-modulated and receiving an echo signal corresponding to the transmitted signal, a pulse compression module for pulse-compressing the signal received by the transceiver module and outputting a signal pulse-compressed, a suppression range determining module for determining a suppression range where a range side lobe suppression process is performed for the pulse-compressed signal, an echo determining module for determining whether the data of the pulse-compressed signal at each depth corresponding to a range side lobe, a suppression value determining module for determining a suppression value for the data of the pulse-compressed signal at each depth, a suppression conducting module for performing a calculation to suppress the range side lobe based on the suppression value for the data determined to be data of the pulse-compressed signal corresponding to the range side lobe by the echo determining module among a plurality of data of the pulse-compressed signals that fall into the suppression range, and a display processing module for generating a signal for display based on the signal outputted from the suppression conducting module to display a generated signal as detected information. | 12-10-2009 |
20110298633 | UNDERWATER DETECTION DEVICE - An underwater detection device includes a transceiver module for transmitting underwater an ultrasonic pulse signal that is frequency-modulated and receiving an echo signal corresponding to the transmitted signal, a pulse compression module for pulse-compressing the signal received by the transceiver module and outputting a signal pulse-compressed, a suppression range determining module for determining a suppression range where a range side lobe suppression process is performed for the pulse-compressed signal, an echo determining module for determining whether the data of the pulse-compressed signal at each depth corresponding to a range side lobe, a suppression value determining module for determining a suppression value for the data of the pulse-compressed signal at each depth, a suppression conducting module for performing a calculation to suppress the range side lobe based on the suppression value for the data determined to be data of the pulse-compressed signal corresponding to the range side lobe by the echo determining module among a plurality of data of the pulse-compressed signals that fall into the suppression range, and a display processing module for generating a signal for display based on the signal outputted from the suppression conducting module to display a generated signal as detected information. | 12-08-2011 |
20130342388 | APPARATUS AND METHOD FOR DETECTING TARGET OBJECT - A target object detection apparatus is provided. The apparatus includes a transmitter, a receiver, a threshold determiner, a parameter setter, a parameter selector, and a timing controller. The transmitter repeatedly transmits a transmission pulse at a transmission timing. The receiver receives a reception signal at a reception timing set based on the transmission timing. The threshold determiner determines whether an amplitude value of the reception signal exceeds a predetermined threshold at every sampling point and counts the number of sampling points at which the amplitude value of the reception signal exceeds the threshold. The parameter setter sets a plurality of different parameters for controlling the transmission timing. The parameter selector selects the parameter from the parameter settings, to minimize the number of sampling points counted by the threshold determiner. The timing controller controls the transmission timing, based on the parameter selected by the parameter selector. | 12-26-2013 |
20140062760 | SIGNAL PROCESSING DEVICE, RADAR APPARATUS, TARGET OBJECT METHOD - A signal processing device is provided. The device includes an echo signal input unit for receiving echo signals resulted from transmission signals reflected on an object. The transmission signals are transmitted from a transmission source at transmission timings at predetermined time intervals, at least one of the transmission timings shifted from the other timings in time. The device includes a complex reception signal generator for generating complex reception signals, a phase calculator for calculating a phase change amount of the complex reception signals with respect to a reference phase, a phase corrector for phase-correcting the complex reception signals and outputting the corrected signals, and a Doppler processor for performing Doppler processing on the corrected signals and outputting the Doppler-processed signals as Doppler echo signals of the object. | 03-06-2014 |
Patent application number | Description | Published |
20090085843 | ELECTRONIC DEVICE, MANUFACTURING METHOD OF THE SAME AND ELECTRONIC APPARATUS - Disclosed herein is an electronic device including, an active matrix region, a short-circuit line, electrostatic protection elements, and a light-shielding film. | 04-02-2009 |
20090101905 | DISPLAY UNIT AND METHOD OF MANUFACTURING THE SAME - A display unit includes, on an insulating substrate, a plurality of wirings formed to extend in different directions, a thin-film transistor, and a display element. At least one of the plurality of wirings is a divided wiring having a crossing portion formed at an intersection with the other of the plurality of wirings, and a main portion which is formed in a layer same as the other of the plurality of wirings with an insulating film in between and which is electrically connected to the crossing portion via an conductive connection provided in the insulating film. At least one of the main portion and the crossing portion includes a first layer and a second layer stacked in order from the insulating substrate side, the second layer being in direct contact with the first layer and made of a material of a higher melting point than the first layer. | 04-23-2009 |
20090153046 | DISPLAY DEVICE AND METHOD FOR PRODUCTION THEREOF - A display device having a plurality of driving elements and wiring parts electrically connected to the driving parts, the display device includes: a plurality of first electrodes which are formed in correspondence to each driving element on the driving elements and the wiring parts; a plurality of light-emitting parts which are each formed on the first electrodes; a common second electrode which is formed from a material that transmits light from the light-emitting part and is formed on the light-emitting parts; auxiliary wiring parts with a lower resistance than the second electrodes; and contact parts which are formed in laminate structure from a plurality of conductive layers and which electrically connect the second electrodes and the auxiliary wirings with each other, with at least the lowermost conductive layer of the conductive layers of the contact parts being in direct contact with the second electrode. | 06-18-2009 |
20090284144 | DISPLAY UNIT - A display unit capable of preventing breaking of a second electrode and decreasing a leakage current through an organic layer is provided. The display unit includes a plurality of organic light emitting devices over a flat substrate. Each of the plurality of organic light emitting devices has a first electrode, an insulating film having an aperture correspondingly to the first electrode, an organic layer formed at least on the first electrode in the aperture and composed of a plurality of layers including a light emitting layer, and a second electrode sequentially. The insulating film has a low taper section having a tilt angle formed by a side face of the aperture and a flat face of the substrate that is smaller than a tilt angle of the other section of a circumference of the aperture in part of the circumference of the aperture. | 11-19-2009 |
20100265223 | DISPLAY DEVICE AND DISPLAY UNIT - A display device capable of improving the view angle characteristics without deteriorating the outside light contrast and a display unit using it are provided. The display device includes a first electrode, an organic layer including a light emitting layer and a second electrode sequentially over a substrate, and having a resonator structure in which light generated in the light emitting layer is resonated between a first end and a second end. An end face of the first electrode on the light emitting layer side is the first end having a step shape. A distance adjustment layer that fills in the step shape and has a flat surface on the second electrode side is provided between the first electrode and the second electrode, and thereby the second end is planarized, and an optical distance between the first end and the second end is varied according to the step shape. | 10-21-2010 |
20120241733 | DISPLAY DEVICE, MANUFACTURING METHOD OF THE SAME AND ELECTRONIC EQUIPMENT HAVING THE SAME - Disclosed herein is a display device including a semiconductor layer, a gate electrode, a source/drain electrode layer, and an organic electric field light-emitting element. The semiconductor layer is provided on a substrate and made of an oxide semiconductor. The gate electrode is provided above a selective first region of the semiconductor layer with a gate insulating film sandwiched therebetween. The source/drain electrode layer is adapted to serve as a source or drain and electrically connected to a second region of the semiconductor layer adjacent to the first region thereof. Also, the organic electric field light-emitting element is provided above a third region of the semiconductor layer different from the first and second region thereof, the organic electric field light-emitting element having a region for the third region that is driven as a pixel electrode. | 09-27-2012 |
20130187164 | THIN-FILM TRANSISTOR, METHOD OF MANUFACTURING THE SAME, DISPLAY UNIT, AND ELECTRONIC APPARATUS - There are provided a thin-film transistor suppressing influence of light and having stable characteristics, and a method of manufacturing the thin-film transistor, as well as a display unit and an electronic apparatus. The thin-film transistor includes: a gate electrode; an oxide semiconductor film having a channel region that faces the gate electrode; and a protective film covering at least the channel region and containing an aluminum lower oxide (Al | 07-25-2013 |
20130256638 | DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME, METHOD OF REPAIRING DISPLAY DEVICE, AND ELECTRONIC APPARATUS - A display device includes light emitting elements that are arranged in a two-dimensional matrix, in which the light emitting elements include a drive circuit which is provided on a substrate, a first insulating layer which covers the drive circuit and the substrate, a light emitting portion in which a first electrode, an organic layer having a light emitting layer, and a second electrode are laminated, and a second insulating layer which covers the first electrode. | 10-03-2013 |
Patent application number | Description | Published |
20110049601 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - According to one embodiment, a semiconductor device includes a substrate, conductive members, an interlayer insulating film, and a plurality of contacts. The conductive members are provided in an upper portion of the substrate or above the substrate to extend in one direction. The interlayer insulating film is provided on the substrate and the conductive members. The plurality of contacts is provided in the interlayer insulating film. In a first region on the substrate, the contacts are located at some of lattice points of an imaginary first lattice. In a second region on the substrate, the contacts are located at some of lattice points of an imaginary second lattice. The second lattice is different from the first lattice. Each of the first lattice and the second lattice includes some of the lattice points located on the conductive members or on an extension region extended in the one direction of the conductive members. A position of each of the lattice points located on the conductive members and the extension region in the one direction is periodically displaced based on every n consecutively-arranged conductive members (n is a natural number). | 03-03-2011 |
20110072402 | PHOTOMASK DESIGNING METHOD AND PHOTOMASK DESIGNING PROGRAM - In one embodiment, a photomask designing method for creating a pattern layout having an assist pattern placed around a design pattern is disclosed. The method can place a plurality of evaluation points around the design pattern and set an evaluation index for imaging properties of the design pattern on an imaging surface. The method can combine a light intensity distribution of the design pattern with light intensity distributions of the evaluation points to obtain a light intensity distribution on the imaging surface and evaluate the light intensity distribution on the imaging surface using the evaluation index to determine a region having an effective evaluation point placed. In addition, the method can determine a placement condition for the assist pattern based on the region where the effective evaluation point is placed and place the assist pattern around the design pattern based on the placement condition to create the pattern layout. | 03-24-2011 |
20120064732 | Method for Determining Position of Auxiliary Pattern, Method for Manufacturing Photomask, and Method for Manufacturing Semiconductor Device - According to one embodiment, a method is disclosed for determining position of an auxiliary pattern on a photomask. The method can include generating a first set for each of three or more imaging positions of an exposure optical system. The method can include generating a second set for each of the three or more imaging positions by inverse Fourier transforming each of the first set. The method can include calculating a second order differential with respect to the imaging position of an index indicating amplitude of light belonging to the second set. In addition, the method can include extracting a position where the second order differential assumes an extremal value on an imaging plane of the exposure optical system. At least part of positions on the photomask each corresponding to the position assuming the extremal value on the imaging plane is used as a formation position of the auxiliary pattern. | 03-15-2012 |
20120070985 | EXPOSURE METHOD AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - According to one embodiment, an exposure method is disclosed. The method can include applying light to a photomask by an illumination. The method can include converging diffracted beams emitted from the photomask by a lens. In addition, the method can include imaging a plurality of point images on an exposure surface. On the photomask, a light transmitting region is formed at a lattice point represented by nonorthogonal unit cell vectors, and in the illumination, a light emitting region is set so that three or more of the diffracted beams pass through positions equidistant from center of a pupil of the lens. | 03-22-2012 |
20140242498 | PRODUCTION METHOD AND EVALUATION APPARATUS FOR MASK LAYOUT - According to one embodiment, a production method for a mask layout of an exposure mask includes evaluating a candidate layout by comparison between an imaged image group and a reference image group. The imaged image group is composed of a plurality of imaged images of patterns formed by performing lithography under a plurality of levels of exposure condition using the candidate layout. The reference image group is composed of a plurality of reference images produced by simulation on assumption of a plurality of levels of the exposure condition. | 08-28-2014 |
20140252639 | INTEGRATED CIRCUIT DEVICE, METHOD FOR PRODUCING MASK LAYOUT, AND PROGRAM FOR PRODUCING MASK LAYOUT - According to one embodiment, a method for producing a mask layout of an exposure mask for forming wiring of an integrated circuit device, includes estimating shape of the wiring formed based on an edge of a pattern included in an initial layout of the exposure mask. The method includes modifying shape of the edge if the estimated shape of the wiring does not satisfy a requirement. | 09-11-2014 |
20140287350 | EXPOSURE TOLERANCE ESTIMATION METHOD AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - According to one embodiment, an exposure tolerance estimation method is disclosed. The method can include setting a plurality of regions along a first surface of a substrate. The method can form a plurality of patterns for estimation by performing exposure on each of the regions using at least three levels of exposure condition using an exposure mask. The method can measure dimensions of the patterns for estimation and find relationships between the exposure condition and the dimensions. The method can select a first region from the regions. In the first region, a first dimension of a first pattern for estimation formed by exposure using a first exposure condition of an intermediate level out of the at least three levels falls within a previously set range. In addition, the method can calculate an exposure tolerance from a relationship between the first exposure condition and the first dimension. | 09-25-2014 |
Patent application number | Description | Published |
20080229841 | Strain Sensor - A fixing member is composed of an upper washer and a lower washer; and a sensor substrate is sandwiched and held with these upper and lower washers. A strain-detecting element is disposed on the sensor substrate. A strain sensor as configured above is fixed onto a measurement target via the fixing member. Accordingly, the strain sensor does not generate an output signal when no external force is applied, demonstrating stable characteristics. | 09-25-2008 |
20080245157 | Distortion Detector - A strain detector includes a bridge circuit having at least two strain resistance elements, a substrate, a first fixed member, and a second fixed member. The substrate has a circuit portion electrically connected to the strain resistance elements. The strain resistance elements are arranged on the substrate. The first fixed member is fixed to a center of an area, where an outer periphery of the area is set at a position at which the strain resistance elements are arranged. The second fixed member is fixed outside the position, where the strain resistance elements are arranged at the substrate. A center of an axis of the first fixed member, a center of an axis of the second fixed member, and the center of the area are positioned on a straight line, and the first fixed member and the second fixed member are arranged on two mutually opposed surfaces of the substrate. | 10-09-2008 |
20090049930 | STRAIN DETECTOR - It is aimed to provide a strain detector having a fewer number of mounting parts and high operation efficiency and usability. The strain detector is provided with a cylindrical strain generator to be strained upon receiving a load, a resistor element which is arranged on the outer circumferential surface of the strain generator and whose resistance varies depending on the amount of strain, a signal processing circuit connected with the resistor element and screw portions arranged above and below the strain generator to sandwich the strain generator. The strain generator and the screw portions are integrated. | 02-26-2009 |
20110179869 | ANGULAR VELOCITY SENSOR ELEMENT, ANGULAR VELOCITY SENSOR AND ANGULAR VELOCITY SENSOR UNIT BOTH USING ANGULAR VELOCITY SENSOR ELEMENT, AND SIGNAL DETECTING METHOD FOR ANGULAR VELOCITY SENSOR UNIT - The angular velocity sensor of the present invention has one end connected to holding section and the other end connected to weighting section. According to the angular velocity sensor, driving arm has a dog-leg structure of arms extending in a direction perpendicular to a connecting direction of holding section and weighting section. | 07-28-2011 |
20120067125 | PHYSICAL QUANTITY SENSOR - A physical quantity sensor includes a beam-like vibrating body and a fixing part supporting both ends of the beam-like vibrating body. A driving element is formed on a central portion of the beam-like vibrating body, and feedback elements are formed on both ends. A physical quantity acting on the beam-like vibrating body is detected by causing natural vibration in the beam-like vibrating body and detecting a natural frequency of the vibrating body. This enables reliable detection of a physical quantity, such as a strain or load, acting on an object. | 03-22-2012 |
Patent application number | Description | Published |
20100053358 | IMAGE CAPTURING APPARATUS AND METHOD FOR CONTROLLING THE SAME - An image capturing apparatus is provided that is capable of performing both object detection using image recognition and object detection using movement detection on successively captured images. In the image capturing apparatus, the reliability of the result of the object detection using image recognition is evaluated based on the previous detection results. If it is determined that the reliability is high, execution of the object detection using movement detection is determined. If it is determined that the reliability is low, non-execution of the object detection using movement detection is determined. With this configuration, the object region can be tracked appropriately. | 03-04-2010 |
20120194689 | IMAGE-CAPTURING APPARATUS AND CONTROL METHOD OF THE IMAGE-CAPTURING APPARATUS - Suppression of a flicker and appreciated AF accuracy are both taken into account in a program diagram for AF for determining shooting conditions for capturing an image for executing an auto-focus detection process in a moving image/still image continuous shooting mode for recording a still image and moving images of a predetermined period just before the still image capturing. Specifically, in a sector of low luminance in which ISO sensitivity is not a minimum value, a shutter speed that can suppress the flicker is set, and then the ISO sensitivity is reduced to the minimum value to allow obtaining a moving image with the suppression of the flicker. | 08-02-2012 |
20120242838 | IMAGE CAPTURING APPARATUS AND METHOD FOR CONTROLLING THE SAME - An image capturing apparatus is provided that is capable of performing both object detection using image recognition and object detection using movement detection on successively captured images. In the image capturing apparatus, the reliability of the result of the object detection using image recognition is evaluated based on the previous detection results. If it is determined that the reliability is high, execution of the object detection using movement detection is determined. If it is determined that the reliability is low, non-execution of the object detection using movement detection is determined. With this configuration, the object region can be tracked appropriately. | 09-27-2012 |
20140176612 | IMAGE PROCESSING APPARATUS, IMAGE CAPTURING APPARATUS, IMAGE PROCESSING METHOD, AND STORAGE MEDIUM - Provided is an image processing apparatus that determines crop positions for an image including a plurality of objects in a preferred manner. This image processing apparatus specifies object regions from the image, and sets a plurality of crop region candidates for each of the specified object regions. The image processing apparatus selects a predetermined number of crop regions from among the plurality of crop region candidates based on evaluation values obtained for the plurality of crop region candidates and on similarities among the plurality of crop region candidates. | 06-26-2014 |
20140176754 | IMAGE CAPTURING APPARATUS AND CONTROL METHOD THEREOF - An image capturing apparatus comprises a photometry unit which detects a luminance of an object; a determining unit which determines, based on a result of photometry at a first exposure, whether to perform autoexposure bracketing that captures a plurality of images at different exposures; a calculating unit which calculates an exposure change amount that is different from the first exposure used when performing the autoexposure bracketing; a correcting unit which corrects the calculated exposure change amount based on a result of photometry at a second exposure that is different from the first exposure; and a shooting control unit which shoots an image at the exposure change amount calculated by the calculating unit or the exposure change amount corrected by the correcting unit. | 06-26-2014 |
Patent application number | Description | Published |
20090008789 | Method of manufacturing micro tunnel-junction circuit and micro tunnel-junction circuit - A method of manufacturing a micro tunnel-junction circuit capable of remarkably relieving the limitation of a circuit pattern to be manufactured and remarkably relieving the limitation of a metallic material to be used. In the method, a three-layer structure is formed by laminating a first metal, an insulator, and a second metal on a substrate in this order, a narrow wall part is formed by cutting the three-layer structure in the depth direction by using a converging ion beam, at least one laterally passed through-hole is formed in the wall part by using the converging ion beam, and at least one recessed portion positioned adjacent to the hole is formed by cutting the upper surface of the wall part in the depth direction. The hole is a through-hole starting at the position of the head of the second metal to the position of the head of the substrate and the recessed part is formed to be recessed from the upper surface of the wall part into the first metal. | 01-08-2009 |
20130312802 | THERMOELECTRIC CONVERTER ELEMENT, METHOD OF MANUFACTURING THERMOELECTRIC CONVERTER ELEMENT, AND THERMOELECTRIC CONVERSION METHOD - An object of the present invention is to provide a low-cost thermoelectric converter element having high productivity and excellent conversion efficiency. A thermoelectric converter element according to the present invention includes a substrate | 11-28-2013 |
20140048115 | POSITION DETECTION DEVICE - A position detection device includes a thermoelectric conversion portion which includes a magnetic layer and a plurality of electrodes. The magnetic layer has magnetization. The plurality of electrodes are formed of a material having spin-orbit interaction, and are formed on the magnetic layer so as to extend in a direction which intersects with the magnetization direction of the magnetic layer. When an arbitrary location on the layer-surface of the magnetic layer is heated, the thermoelectric conversion portion modulates the effective temperature in the magnetic layer and induces a spin Seebeck effect. As a result, the thermoelectric conversion portion generates, from the plurality of electrodes, a voltage corresponding to the heated position as position information. | 02-20-2014 |
20140096810 | THERMOELECTRIC CONVERSION DEVICE - A thermoelectric conversion device includes: a substrate; two magnetic layers having a fixed magnetization direction with respect to the substrate; and at least one electrode including a material having a spin orbit interaction, wherein a gap (or dielectric layer of low thermal conductivity) is provided between the magnetic layers. A thickness of the gap (or dielectric layer) is of a distance within the range at that a magnetic dipole interaction is exerted, and a film thickness of the magnetic layers is of about a characteristic length determined by diffusion or the like of a magnetic excitation. | 04-10-2014 |
20140182645 | THERMOELECTRIC CONVERSION ELEMENT AND THERMOELECTRIC CONVERSION METHOD - Provided is a thermoelectric conversion element capable of converting both a temperature gradient in an in-plane direction and a temperature gradient in a direction perpendicular to plane into electric power at the same time. The thermoelectric conversion element includes: a substrate; a magnetic film provided on the substrate and formed of a polycrystalline magnetic insulator material that is magnetizable in a predetermined direction having a component parallel to a film surface; and electrodes provided to the magnetic film and made of a material having a spin orbit interaction. The thermoelectric conversion element is configured to be capable of outputting a temperature gradient perpendicular to a surface of the magnetic film as a potential difference in a surface of one of the electrodes and outputting a temperature gradient parallel to the surface of the magnetic film as a potential difference between the electrodes. | 07-03-2014 |
Patent application number | Description | Published |
20080277692 | SEMICONDUCTOR DEVICE - A semiconductor device includes: a first semiconductor layer made of an Al | 11-13-2008 |
20090200576 | SEMICONDUCTOR DEVICE - A semiconductor device includes: a first semiconductor layer including Al | 08-13-2009 |
20100314666 | NITRIDE SEMICONDUCTOR DEVICE - A nitride semiconductor device includes: a first layer made of a first nitride semiconductor; a second layer provided on the first layer and made of a second nitride semiconductor having a larger band gap than the first nitride semiconductor; a first electrode electrically connected to the second layer; a second electrode provided on the second layer and juxtaposed to the first electrode in a first direction; and a floating electrode provided on the second layer, the floating electrode including: a portion sandwiched by the second electrode in a second direction orthogonal to the first direction; and a portion protruding from the second electrode toward the first electrode. | 12-16-2010 |
20110204380 | NITRIDE-BASED FET - According to an embodiment, in a nitride-based FET, a protrusion portion is formed at an upper portion of an undoped GaN layer by second recess etching. On the protrusion portion, an undoped AlGaN layer is provided which is formed by first recess etching the upper portion of the undoped AlGaN layer. A multilayer portion is composed of the protrusion portion of the undoped GaN layer, the undoped AlGaN layer, and an insulating film. A trench portion is formed by recess etching the insulating film, the undoped AlGaN layer and a surface of the undoped GaN layer. A gate insulating film is formed on the multilayer portion and the trench portion. A gate electrode is formed on the gate insulating film so as to cover the trench portion. A film thickness of the insulting film is set larger than that of the gate insulating film. | 08-25-2011 |
20110272708 | NITRIDE SEMICONDUCTOR DEVICE - According to one embodiment, a nitride semiconductor device includes a first, a second and a third semiconductor layer, a first and a second main electrode and a control electrode. The first layer made of a nitride semiconductor of a first conductivity type is provided on a substrate. The second layer made of a nitride semiconductor of a second conductivity type is provided on the first layer. The third layer made of a nitride semiconductor is provided on the second layer. The first electrode is electrically connected with the second layer. The second electrode is provided at a distance from the first electrode and electrically connected with the second layer. The control electrode is provided within a first trench via an insulating film. The first trench is disposed between the first and the second main electrodes, penetrates the third and the second layers, and reaches the first layer. | 11-10-2011 |
20110309413 | SEMICONDUCTOR DEVICE - A semiconductor device includes: a first semiconductor layer including Al | 12-22-2011 |
20120187413 | NITRIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME - According to one embodiment, a nitride semiconductor device includes a first semiconductor, a second semiconductor layer, a third semiconductor layer, a fourth semiconductor layer, a first electrode, a second electrode and a third electrode. The first, second and fourth semiconductor layers include a nitride semiconductor. The second semiconductor layer is provided on the first semiconductor layer, has a band gap not less than that of the first semiconductor layer. The third semiconductor layer is provided on the second semiconductor layer. The third semiconductor layer is GaN. The fourth semiconductor layer is provided on the third semiconductor layer to have an interspace on a part of the third semiconductor layer, has a band gap not less than that of the second semiconductor layer. The first electrode is provided on a portion of the third semiconductor layer. The fourth semiconductor layer is not provided on the portion. | 07-26-2012 |
20120241751 | NITRIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME - According to one embodiment, a nitride semiconductor device includes a first semiconductor layer, a second semiconductor layer, a first electrode, a second electrode, a third electrode, a first insulating film and a second insulating film. The first semiconductor layer includes a nitride semiconductor. The second semiconductor layer is provided on the first layer, includes a nitride semiconductor, and includes a hole. The first electrode is provided in the hole. The second electrode is provided on the second layer. The third electrode is provided on the second layer so that the first electrode is disposed between the third and second electrodes. The first insulating film is provided between the first electrode and an inner wall of the hole and between the first and second electrodes, and is provided spaced from the third electrode. The second insulating film is provided in contact with the second layer between the first and third electrodes. | 09-27-2012 |
20130062671 | NITRIDE SEMICONDUCTOR DEVICE - A nitride semiconductor device includes a first semiconductor layer, a second semiconductor layer, a conductive substrate, a first electrode, a second electrode, and a control electrode. The second semiconductor layer is directly bonded to the first semiconductor layer. The conductive substrate is provided on and electrically connected to the first semiconductor layer. The first electrode and the second electrode are provided on and electrically connected to a surface of the second semiconductor layer on a side opposite to the first semiconductor layer. The control electrode is provided on the surface of the second semiconductor layer between the first electrode and the second electrode. The first electrode is electrically connected to a drain electrode of a MOSFET formed of Si. The control electrode is electrically connected to a source electrode of the MOSFET. The conductive substrate is electrically connected to a gate electrode of the MOSFET. | 03-14-2013 |
20130069117 | NITRIDE SEMICONDUCTOR DEVICE - A nitride semiconductor device includes a substrate, a first In | 03-21-2013 |
20130153966 | SEMICONDUCTOR DEVICE - A semiconductor device includes: a first semiconductor layer made of an Al | 06-20-2013 |
20130240899 | NITRIDE SEMICONDUCTOR DEVICE - According to one embodiment a nitride semiconductor device includes a first, a second and a third semiconductor layer, a first and a second main electrode and a control electrode. The first layer made of a nitride semiconductor of a first conductivity type is provided on a substrate. The second layer made of a nitride semiconductor of a second conductivity type is provided on the first layer. The third layer made of a nitride semiconductor is provided on the second layer. The first electrode is electrically connected with the second layer. The second electrode is provided at a distance from the first electrode and electrically connected with the second layer. The control electrode is provided within a first trench via an insulating film. The first trench is disposed between the first and the second main electrodes, penetrates the third and the second layers, and reaches the first layer. | 09-19-2013 |
20130248928 | SEMICONDUCTOR DEVICE HAVING NITRIDE LAYERS - According to one embodiment, a semiconductor device having a semiconductor substrate, first to fourth semiconductor layers of nitride, first to third electrodes and a gate electrode is provided. The first semiconductor layer is provided directly on the semiconductor substrate or on the same via a buffer layer. The second semiconductor layer is provided so as to be spaced apart from the first semiconductor layer. The third semiconductor layer is provided on the second semiconductor layer and has a band gap wider than that of the second semiconductor layer. The fourth semiconductor layer insulates the first and second semiconductor layers. The first electrode forms an ohmic junction with the first to the third semiconductor layers. The second electrode is provided on the third semiconductor layer. The gate electrode is provided between the first and the second electrodes. The third electrode forms a Schottky junction with the first semiconductor layer. | 09-26-2013 |
20130248931 | NITRIDE SEMICONDUCTOR DEVICE - According to one embodiment, a nitride semiconductor device has an electroconductive substrate, a first nitride semiconductor layer provided directly on the electroconductive substrate or provided on the electroconductive substrate through a buffer layer and formed of a non-doped nitride semiconductor, a second nitride semiconductor layer provided on the first nitride semiconductor layer and formed of a non-doped or n-type nitride semiconductor having a band gap wider than that of the first nitride semiconductor layer, a heterojunction field effect transistor having a source electrode, a drain electrode, and a gate electrode, a Schottky barrier diode having an anode electrode and a cathode electrode, first and second element isolation insulating layers, and a frame electrode. The frame electrode is electrically connected to the source electrode and the electroconductive substrate, and surrounds outer peripheries of the heterojunction field effect transistor and the Schottky barrier diode. | 09-26-2013 |
20130341641 | RECTIFIER CIRCUIT - A rectifier circuit has a rectifier element and a unipolar field-effect transistor connected in series between a first terminal and a second terminal. The rectifier element comprises a first electrode and a second electrode disposed in a direction of a forward current flowing from the first terminal to the second terminal. The field-effect transistor has a gate electrode having a potential identical to a potential at the first electrode, and a source electrode and a drain electrode connected in series to the rectifier element and passing a current depending on the potential at the gate electrode. A breakdown voltage between the gate electrode and drain electrode of the field-effect transistor in a reverse bias mode, where a potential at the second terminal is higher than a potential at the first terminal, being set higher than a breakdown voltage of the rectifier element. | 12-26-2013 |
20140035004 | SEMICONDUCTOR DEVICE - According to one embodiment, a semiconductor device has a first nitride semiconductor layer, a second nitride semiconductor layer provided on the first nitride semiconductor layer and formed of a non-doped or n-type nitride semiconductor having a band gap wider than that of the first nitride semiconductor layer, a heterojunction field effect transistor having a source electrode, a drain electrode, and a gate electrode, a Schottky barrier diode having an anode electrode and a cathode electrode, and first and second element isolation insulating layers. The first element isolation insulating layer has a first end contacting with the drain electrode and the anode electrode, and a second end located in the first nitride semiconductor layer. The second element isolation insulating layer has a third end contacting with the cathode electrode, and a fourth end located in the first nitride semiconductor layer. | 02-06-2014 |
20140077217 | SEMICONDUCTOR DEVICE - According to one embodiment, a semiconductor device includes a substrate, a first semiconductor region, a second semiconductor region, a first electrode, a first electrode and a conducting section. The substrate includes a conductive region and has a first surface. The first semiconductor region is provided on the first surface side of the substrate and includes Al | 03-20-2014 |
20140077263 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME - According to one embodiment, a semiconductor device includes a first nitride semiconductor layer, a second nitride semiconductor layer, a third nitride semiconductor layer, an insulating film, an ohmic electrode, and a Schottky electrode. A surface region of the third nitride semiconductor layer between the ohmic electrode and the Schottky electrode contains an element heterogeneous with the constituent element of the third nitride semiconductor layer at a higher concentration than a region of the third nitride semiconductor layer of the second nitride semiconductor layer side. | 03-20-2014 |
20140097505 | SEMICONDUCTOR DEVICE HAVING NITRIDE LAYERS - According to one embodiment, a second nitride semiconductor layer is provided on a first nitride semiconductor layer and has a band gap wider than that of the first nitride semiconductor layer. A third nitride semiconductor layer is provided above the second nitride semiconductor layer. A fourth nitride semiconductor layer is provided on the third nitride semiconductor layer and has a band gap wider than that of the third nitride semiconductor layer. A fifth nitride semiconductor layer is provided between the second and the third nitride semiconductor layers. A first electrode contacts the second, the third and the fourth nitride semiconductor layers. A second electrode is provided on the fourth nitride semiconductor layer. A gate electrode is provided on a gate insulating layer between the first and the second electrodes. A third electrode is in contact with the second nitride semiconductor layer. | 04-10-2014 |
20140246700 | NITRIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME - According to one embodiment, a nitride semiconductor device includes a first semiconductor, a second semiconductor layer, a third semiconductor layer, a fourth semiconductor layer, a first electrode, a second electrode and a third electrode. The first, second and fourth semiconductor layers include a nitride semiconductor. The second semiconductor layer is provided on the first semiconductor layer, has a band gap not less than that of the first semiconductor layer. The third semiconductor layer is provided on the second semiconductor layer. The third semiconductor layer is GaN. The fourth semiconductor layer is provided on the third semiconductor layer to have an interspace on a part of the third semiconductor layer, has a band gap not less than that of the second semiconductor layer. The first electrode is provided on a portion of the third semiconductor layer. The fourth semiconductor layer is not provided on the portion. | 09-04-2014 |
20140284610 | SEMICONDUCTOR DEVICE - According to an embodiment, a semiconductor device includes a conductive substrate, a Schottky barrier diode, and a field-effect transistor. The Schottky barrier diode is mounted on the conductive substrate and includes an anode electrode and a cathode electrode. The anode electrode is electrically connected to the conductive substrate. The field-effect transistor is mounted on the conductive substrate and includes a source electrode, a drain electrode, and a gate electrode. The source electrode of the field-effect transistor is electrically connected to the cathode electrode of the Schottky barrier diode. The gate electrode of the field-effect transistor is electrically connected to the anode electrode of the Schottky barrier diode. | 09-25-2014 |
Patent application number | Description | Published |
20100188631 | DISPLAY PANEL - A liquid crystal display panel includes an active matrix substrate, a counter substrate, a liquid crystal layer, and a sealant. The counter electrode is opposed to the active matrix substrate. The liquid crystal layer is provided between the active matrix substrate and the counter substrate. The sealant, which surrounds the liquid crystal layer between the active matrix substrate and the counter substrate, joins the active matrix substrate and the counter substrate and seals the liquid crystal layer. A portion of the surface on the liquid crystal layer side of the active matrix substrate which is located at the periphery of the liquid crystal display panel is flat. | 07-29-2010 |
20110037936 | DISPLAY PANEL - A liquid crystal display panel includes an active matrix substrate, a counter substrate, a liquid crystal layer, and a sealant. The counter electrode is opposed to the active matrix substrate. The liquid crystal layer is provided between the active matrix substrate and the counter substrate. The sealant, which surrounds the liquid crystal layer between the active matrix substrate and the counter substrate, joins the active matrix substrate and the counter substrate and seals the liquid crystal layer. A portion of the surface on the liquid crystal layer side of the active matrix substrate which is located at the periphery of the liquid crystal display panel is flat. | 02-17-2011 |
20110043744 | DISPLAY PANEL - A liquid crystal display panel includes an active matrix substrate, a counter substrate, a liquid crystal layer, and a sealant. The counter electrode is opposed to the active matrix substrate. The liquid crystal layer is provided between the active matrix substrate and the counter substrate. The sealant, which surrounds the liquid crystal layer between the active matrix substrate and the counter substrate, joins the active matrix substrate and the counter substrate and seals the liquid crystal layer. A portion of the surface on the liquid crystal layer side of the active matrix substrate which is located at the periphery of the liquid crystal display panel is flat. | 02-24-2011 |
20110149199 | LIQUID CRYSTAL DISPLAY DEVICE - A liquid crystal display device includes a TFT substrate and a CF substrate arranged to face each other and a liquid crystal layer sandwiched therebetween, wherein a plurality of first supports are arranged to extend from one of the substrates to reach the other substrate and a plurality of second supports, which are shorter than the first supports, are arranged to extend from one of the substrates to the other substrate. | 06-23-2011 |
20120200220 | DISPLAY PANEL - A liquid crystal display panel includes an active matrix substrate, a counter substrate, a liquid crystal layer, and a sealant. The counter electrode is opposed to the active matrix substrate. The liquid crystal layer is provided between the active matrix substrate and the counter substrate. The sealant, which surrounds the liquid crystal layer between the active matrix substrate and the counter substrate, joins the active matrix substrate and the counter substrate and seals the liquid crystal layer. A portion of the surface on the liquid crystal layer side of the active matrix substrate which is located at the periphery of the liquid crystal display panel is flat. | 08-09-2012 |
Patent application number | Description | Published |
20110178157 | MODULATION OF HSP47 EXPRESSION - Provided herein are compositions, methods and kits for modulating expression of target genes, particularly heat shock protein 47 (hsp47). The compositions, methods and kits may include nucleic acid molecules (for example, short interfering nucleic acid (siNA), short interfering RNA (siRNA), double-stranded RNA (dsRNA), micro-RNA (miRNA) or short hairpin RNA (shRNA)) that modulate a gene encoding hsp47, for example, the gene encoding human hsp47. The composition and methods disclosed herein may also be used in treating conditions and disorders associated with hsp47 such as liver fibrosis, pulmonary fibrosis, peritoneal fibrosis and kidney fibrosis. | 07-21-2011 |
20120142754 | MODULATION OF TIMP1 AND TIMP2 EXPRESSION - Provided herein are compositions, methods and kits for modulating expression of target genes, particularly of tissue inhibitor of metalloproteinase 1 and of tissue inhibitor of metalloproteinase 2 (TIMP1 and TIMP2, respectively). The compositions, methods and kits may include nucleic acid molecules (for example, short interfering nucleic acid (siNA), short interfering RNA (siRNA), double-stranded RNA (dsRNA), micro-RNA (miRNA) or short hairpin RNA (shRNA)) that modulate a gene encoding TIMP1 and TIMP2, for example, the gene encoding human TIMP1 and TIMP2. The composition and methods disclosed herein may also be used in treating conditions and disorders associated with TIMP1 and TIMP2 including fibrotic diseases and disorders including liver fibrosis, pulmonary fibrosis, peritoneal fibrosis and kidney fibrosis. | 06-07-2012 |
20130030034 | MODULATION OF TIMP1 AND TIMP2 EXPRESSION - Provided herein are compositions, methods and kits for modulating expression of target genes, particularly of tissue inhibitor of metalloproteinase 1 and of tissue inhibitor of metalloproteinase 2 (TIMP1 and TIMP2, respectively). The compositions, methods and kits may include nucleic acid molecules (for example, short interfering nucleic acid (siNA), short interfering RNA (siRNA), double-stranded RNA (dsRNA), micro-RNA (miRNA) or short hairpin RNA (shRNA)) that modulate a gene encoding TIMP1 and TIMP2, for example, the gene encoding human TIMP1 and TIMP2. The composition and methods disclosed herein may also be used in treating conditions and disorders associated with TIMP1 and TIMP2 including fibrotic diseases and disorders including liver fibrosis, pulmonary fibrosis, peritoneal fibrosis and kidney fibrosis. | 01-31-2013 |
20140235695 | MODULATION OF HSP47 EXPRESSION - Provided herein are compositions, methods and kits for modulating expression of target genes, particularly heat shock protein 47 (hsp47). The compositions, methods and kits may include nucleic acid molecules (for example, short interfering nucleic acid (siNA), short interfering RNA (siRNA), double-stranded RNA (dsRNA), micro-RNA (miRNA) or short hairpin RNA (shRNA)) that modulate a gene encoding hsp47, for example, the gene encoding human hsp47. The composition and methods disclosed herein may also be used in treating conditions and disorders associated with hsp47 such as liver fibrosis, pulmonary fibrosis, peritoneal fibrosis and kidney fibrosis. | 08-21-2014 |