Patent application number | Description | Published |
20140027748 | ORGANIC ELECTROLUMINESCENCE DEVICE AND METHOD OF FABRICATING THE SAME - An organic EL device includes: a reflective electrode; a transparent electrode opposite the reflective electrode; an organic layer including a light-emitting layer between the reflective electrode and transparent electrode; and a low refractive index layer between the reflective electrode and light-emitting layer. The low refractive index layer has a function of transporting/injecting electrons/holes, and has a lower refractive index than the light-emitting layer. Distance between the surface of the reflective electrode and a central light-emitting position of the light-emitting layer is 300 nm or less. Furthermore, Δn×d/λ≦−0.009 and Δn×d/λ≦−0.02 are satisfied when the reflective electrode comprises Al and Ag, respectively, where: λ denotes the central light-emitting wavelength of light generated in the light-emitting layer; Δn denotes the refractive index difference between the low refractive index layer and the light-emitting layer, with the refractive index of the light-emitting layer as reference; and d denotes the thickness of the low refractive index layer. | 01-30-2014 |
20140203700 | LIGHT EMITTING DEVICE AND LIGHT SHEET - A light-emitting device disclosed herein includes: an emission layer; a diffraction grating structure including a diffraction grating; and a diffusion layer having a structure for diffusing light which is transmitted from one face to another face. The light going out from the emission layer has a central wavelength λ. The diffraction grating has a period p which is not less than 1.0λ and not more than 3.5λ. The diffusion layer has a haze of 80% or more and a total light transmittance of 80% or less. | 07-24-2014 |
20150085494 | OPTICAL SHEET, LIGHT-EMITTING DEVICE, METHOD FOR MANUFACTURING OPTICAL SHEET, AND METHOD FOR MANUFACTURING LIGHT-EMITTING DEVICE - A light-diffusing layer is provided for diffusing incident light by diffracting at least a portion of the incident light, and the diffuse light diffused by the light-diffusing layer is diffused about a direction different from the emission direction of non-diffused light that passes through the light-diffusing layer without being diffused. | 03-26-2015 |
20150179977 | LIGHT-EMITTING DEVICE - A light-emitting device includes: a light-emitting element including a transparent electrode, a reflecting electrode, and an organic layer that includes a light-emitting layer; a transparent multilayer body including a low-refractive-index layer and a high-refractive-index layer, the high-refractive-index layer being provided in contact with the transparent electrode; a first uneven structure at an interface between the low-refractive-index layer and the high-refractive-index layer, the first uneven structure including depressions and projections, a height of each of the projections relative to the depressions being 400 nm or more; and a second uneven structure at an interface between the reflecting electrode and the organic layer, the second uneven structure including depressions and projections, a height of each of the projections relative to the depressions in the second uneven structure being 20 nm or more and 100 nm or less. | 06-25-2015 |
20150249183 | LIGHT-EMITTING DEVICE AND LIGHT-EMITTING APPARATUS - A light-emitting device includes a photoluminescent layer that emits light containing first light, a light-transmissive layer located on or near the photoluminescent layer, and one or more reflectors. A submicron structure is defined on at least one of the photoluminescent layer and the light-transmissive layer. The one or more reflector are located outside the submicron structure. The submicron structure includes at least projections or recesses and satisfies the following relationship: | 09-03-2015 |
20150249186 | LIGHT-EMITTING DEVICE AND LIGHT-EMITTING APPARATUS - A light-emitting device includes a photoluminescent layer that emits light containing first light, and a light-transmissive layer located on or near the photoluminescent layer. A submicron structure is defined on at least one of the photoluminescent layer and the light-transmissive layer. The submicron structure includes at least projections or recesses. The submicron structure has spatial frequency components distributed at least from more than 0 to 2/D | 09-03-2015 |
20150249187 | LIGHT-EMITTING DEVICE AND LIGHT-EMITTING APPARATUS - A light-emitting device includes a photoluminescent layer that emits light containing first light, a light-transmissive layer located on or near the photoluminescent layer, a low-refractive-index layer and a high-refractive-index layer. A submicron structure is defined on the photoluminescent layer and/or the light-transmissive layer. The low-refractive-index layer is located on or near the photoluminescent layer so that the photoluminescent layer is located between the low-refractive-index layer and light-transmissive layer. The high-refractive-index layer is located on or near the low-refractive-index layer so that the low-refractive-index layer is located between the high-refractive-index layer and the photoluminescent layer. The submicron structure includes at least projections or recesses and satisfies the following relationship: | 09-03-2015 |
20160049562 | LIGHT-EMITTING DEVICE - An illuminator includes a light-emitting element and a light extraction sheet which transmits light occurring from the light-emitting element. The light-emitting element includes a first electrode having a light transmitting property, a second electrode, and an emission layer between the first and second electrodes. The light extraction sheet includes a light-transmitting substrate having a first principal face and a second principal face, a first light extraction structure on the first principal face side of the light-transmitting substrate, and a second light extraction structure on the second principal face side of the light-transmitting substrate. The first light extraction structure includes a low-refractive index layer and a high-refractive index layer. The second light extraction structure is arranged so that light which is transmitted through the light-transmitting substrate and arrives at an incident angle of 40 degrees to 60 degrees has an average transmittance of 42% or more. | 02-18-2016 |