Patent application number | Description | Published |
20090087736 | SEALED BATTERY - A sealed battery including: an electrode assembly | 04-02-2009 |
20110148744 | PLASMA DISPLAY PANEL - A first aim of the present invention is to provide a PDP capable of stably delivering favorable image display performance and being driven with low power, by improving the surface layer to improve secondary electron emission characteristics and charge retention characteristics. A second aim of the present invention is to provide a PDP capable of displaying high-definition images even when the PDP is driven at high speed by preventing the discharge delay during driving. In order to achieve these aims, the surface layer (protective film) | 06-23-2011 |
20110165818 | METHOD FOR PRODUCING PLASMA DISPLAY PANEL - Provided is a manufacturing method that allows even a PDP having high-definition cells to exhibit excellent image display performance with reduced power consumption by effectively preventing impurities from adhering to the protective layer. Specifically, in a pre-baking step, a back substrate | 07-07-2011 |
20110298363 | PLASMA DISPLAY PANEL - A first aim of the present invention is to provide a PDP capable of stably delivering favorable image display performance and being driven with low power, by improving the surface layer to improve secondary electron emission characteristics and charge retention characteristics. A second aim of the present invention is to provide a PDP, in addition to having the above-mentioned effects, capable of reducing an aging time. In order to achieve these aims, a crystalline film of a film thickness of approximately 1 μm is disposed as a surface layer (protective film) | 12-08-2011 |
20130015762 | PLASMA DISPLAY PANELAANM Fukui; YusukeAACI OsakaAACO JPAAGP Fukui; Yusuke Osaka JPAANM Nishitani; MikihikoAACI NaraAACO JPAAGP Nishitani; Mikihiko Nara JPAANM Sakai; MasahiroAACI KyotoAACO JPAAGP Sakai; Masahiro Kyoto JPAANM Okafuji; MichikoAACI OsakaAACO JPAAGP Okafuji; Michiko Osaka JPAANM Okui; YayoiAACI OsakaAACO JPAAGP Okui; Yayoi Osaka JPAANM Honda; YosukeAACI NaraAACO JPAAGP Honda; Yosuke Nara JPAANM Yamauchi; YasuhiroAACI OsakaAACO JPAAGP Yamauchi; Yasuhiro Osaka JPAANM Inoue; OsamuAACI OsakaAACO JPAAGP Inoue; Osamu Osaka JPAANM Asano; HiroshiAACI OsakaAACO JPAAGP Asano; Hiroshi Osaka JP - There is provided a PDP in which the structure of the periphery of a protective film is improved, excellent secondary electron emission property is exhibited, and improved efficiency and increased life can be expected. There is further provided a PDP in which occurrence of a discharge delay at the time of driving is prevented, and exhibition of high quality image display performance can be expected even in a high definition PDP that is driven at a high speed. Specifically, a crystalline film containing Sr in CeO | 01-17-2013 |
20130095352 | NON-AQUEOUS ELECTROLYTE SECONDARY BATTERY - A non-aqueous electrolyte secondary battery has a pressure-sensitive elastic element reliably operating at a desired operating pressure. The battery includes an outer can having an opening; an electrode assembly which is housed in the outer can and comprises a positive electrode having a positive electrode current collector and a negative electrode having a negative electrode current collector; a sealing plate sealing the opening; an external electrode terminal whose one end is engaged with the throughhole of the sealing plate and whose other end projects outside the sealing plate; and a pressure-sensitive elastic element which is disposed inside the sealing plate in the battery and deforms in accordance with an increase in the gas pressure in the battery, the external electrode terminal. The external electrode terminal includes therein a hole connecting the outside of the battery and the space in contact with the outer side of pressure-sensitive elastic element. | 04-18-2013 |
20140264328 | SEMICONDUCTOR ELEMENT - Provided is a semiconductor element including a p-type semiconductor layer that is used in combination with an n-type ZnO-based semiconductor layer, and that can be formed, even at relatively low temperature, to have a small thickness, high crystallinity, and surface smoothness. The semiconductor element is expected to achieve high performance when used for a large-screen display. Specifically, the semiconductor element includes: a glass substrate; a lower electrode; a ZnO active layer (n-type semiconductor layer) having a thickness of 2 um to 4 um; a p-type ZnNiO layer (first p-type semiconductor layer) made of a p-type semiconductor material of Zn | 09-18-2014 |