Yasuda, Kanagawa
Atsushi Yasuda, Kanagawa JP
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20100308349 | LIGHT-EMITTING DIODE, METHOD FOR MAKING LIGHT-EMITTING DIODE, INTEGRATED LIGHT-EMITTING DIODE AND METHOD FOR MAKING INTEGRATED LIGHT-EMITTING DIODE, METHOD FOR GROWING A NITRIDE-BASED III-V GROUP COMPOUND SEMICONDUCTOR, LIGHT SOURCE CELL UNIT, LIGHT-EMITTING DIODE BACKLIGHT, AND LIGHT-EMITTING DIODE DISPLAY AND ELECTRONIC DEVICE - A light-emitting diode with (a) a substrate having at least one recessed portion on one main surface; (b) a sixth nitride-based III-V group compound semiconductor layer grown on the substrate without forming a space in the recessed portion; and (c) a third nitride-based III-V group compound semiconductor layer of a first conduction type, an active layer and a fourth nitride-based III-V group compound semiconductor layer of a second conduction type formed over the sixth nitride-based III-V group compound semiconductor layer, wherein, a dislocation occurring, in the sixth nitride-based III-V group compound semiconductor layer, from an interface with a bottom surface of the recessed portion in a direction vertical to the one main surface arrives at an inclined face or its vicinity of a triangle having the bottom surface of the recessed portion as a base and bends in a direction parallel to the one main surface. | 12-09-2010 |
Eiichi Yasuda, Kanagawa JP
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20090114520 | Method of Producing Charcoal - A novel method of producing charcoal. The method of producing charcoal comprises treating an organic material with iodine followed by the carbonization treatment. The organic material is desirably an organic material stemming from the biomass. The treatment with iodine is desirably conducted by bringing an iodine vapor into contact with the organic material. Further, the treatment with iodine is desirably conducted by heating a container which contains the organic material and iodine. The temperature in the treatment with iodine is desirably in a range of not lower than 50° C. but not higher than a decomposition temperature of the organic material. Further, the carbonization treatment is desirably a heat treatment conducted in an inert gas atmosphere or in vacuum. | 05-07-2009 |
Gentaro Yasuda, Kanagawa JP
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20140308733 | METHOD FOR INDUCING GERMINATION OF SPORE FORMING BACTERIUM - The present application relates to a method for inducing germination of a spore forming bacterium, specifically, a method for inducing germination of a spore forming bacterium, comprising: using one or more compounds having a phenolic backbone to induce germination of a spore forming bacterium selected from the group consisting of the genus | 10-16-2014 |
20150079059 | METHOD FOR STERILIZING DOMESTIC ANIMAL LITTER BY MICROORGANISM - This invention relates to a sterilization agent for livestock bedding or a composting accelerator for organic waste or livestock bedding, comprising at least one | 03-19-2015 |
Hidefumi Yasuda, Kanagawa JP
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20150048410 | SEMICONDUCTOR LIGHT EMITTING DEVICE - According to one embodiment, in a semiconductor light emitting device, a first electrode is provided on a first surface of the semiconductor laminated body including a light emitting layer. A joint metal layer is provided on a second surface of the semiconductor laminated body opposed to the first surface of the semiconductor laminated body. A bonding metal layer covers a first surface of the joint metal layer on a side opposite to the semiconductor laminated body and is provided on a side of the second surface of the semiconductor laminated body. A substrate provided with a second electrode is bonded to the bonding metal layer. A layer having an etching resistance property to an etchant for etching the semiconductor laminated body is formed on a side of the surface of the bonding metal layer facing to the semiconductor laminated body. | 02-19-2015 |
20160118541 | SEMICONDUCTOR LIGHT EMITTING DEVICE - According to one embodiment, in a semiconductor light emitting device, a first electrode is provided on a first surface of the semiconductor laminated body including a light emitting layer. A joint metal layer is provided on a second surface of the semiconductor laminated body opposed to the first surface of the semiconductor laminated body. A bonding metal layer covers a first surface of the joint metal layer on a side opposite to the semiconductor laminated body and is provided on a side of the second surface of the semiconductor laminated body. A substrate provided with a second electrode is bonded to the bonding metal layer. A layer having an etching resistance property to an etchant for etching the semiconductor laminated body is formed on a side of the surface of the bonding metal layer facing to the semiconductor laminated body. | 04-28-2016 |
Hideki Yasuda, Kanagawa JP
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20100196713 | FINE PARTICLES AND METHOD FOR PRODUCING THE SAME - To provide a method for producing fine particles, including: forming on a surface of a base material a concavo-convex pattern made by arranging a plurality of convex portions on the surface; forming fine particles made of a fine particle material on at least part of the concavo-convex pattern; and releasing the formed fine particles from the concavo-convex pattern. | 08-05-2010 |
20130235120 | STRUCTURE BODY HAVING LIQUID-REPELLENT SURFACE, NOZZLE PLATE OF INKJET HEAD, AND METHOD OF CLEANING STRUCTURE BODY AND NOZZLE PLATE - A structure body has a liquid-repellent surface exhibiting repellency to a liquid. The structure body includes: a substrate which has a base surface; and a plurality of projections which are arranged on the base surface of the substrate. The projections have a characteristic angle defined as an angle between a lateral surface of each of the projections and a plane that intersects with the lateral surface and is parallel to the base surface, the angle being taken inside the projection on the lateral surface and in a side of the base surface on the plane. The characteristic angle of the projections is smaller than 90° and is smaller than a reference angle that is separately determined as a static contact angle of the liquid with respect to a reference surface that is smooth and has a chemical state identical to a chemical state of the lateral surface of the projection. | 09-12-2013 |
Hideyo Yasuda, Kanagawa JP
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20090215641 | Gene involved in occurrence/recurrence of hcv-positive hepatocelluar carcinoma - The present invention relates to a method for screening a gene involved in early recurrence of HCV-positive hepatocellular carcinoma associated with chronic hepatitis, comprising: determining an expression level of a gene in a noncancerous site from each of early and late recurrent cases of HCV-positive hepatocellular carcinoma associated with chronic hepatitis; and selecting a gene whose expression is increased in the early recurrent case compared with that in the late recurrent case. The present invention can provide a gene involved in recurrence of hepatocellular carcinoma. | 08-27-2009 |
20090285960 | WHEAT HAVING NEW STARCH AND METHOD FOR PRODUCING IT - The object of the present invention is to provide a wheat which accumulates a starch with a novel property by controlling the expression of the enzymes described in claims. | 11-19-2009 |
Hiroaki Yasuda, Kanagawa JP
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20120075449 | ENDOSCOPE DEVICE - The endoscope device includes a light source control section that controls emission of a narrow band light from a first light source section and a wide band light from a second light source section and light emission amounts of the narrow and wide band light, an imaging section that captures an image of a subject using returned light from the subject, a light amount calculating section that calculates a capturing light amount, a light amount ratio calculating section that calculates a ratio between light emission amounts of the narrow and wide band light, and an image processing section that performs a predetermined image processing. The light source control section controls the light emission amounts in accordance with the capturing light amount and the image processing section changes an image processing condition for adjusting a color tint in accordance with the ratio. | 03-29-2012 |
20120101348 | ELECTRONIC ENDOSCOPE SYSTEM HAVING PROCESSOR DEVICE, AND METHOD FOR PROCESSING ENDOSCOPIC IMAGE - White light and excitation light are applied to an internal body part. An electronic endoscope captures a normal image of the internal body part irradiated with the white light, and a special image of autofluorescence emitted from living body tissue of the internal body part irradiated with the excitation light. An object distance detector detects an object distance between a CCD and an inspection area of the internal body part based on the normal image. A binning processing section applies a binning process to the special image. There are two types of binning processes, i.e. an intensity adjustment process and a resolution adjustment process. In the intensity adjustment process, the binning number is increased with increase in the object distance. In the resolution adjustment process, the binning number is decreased with increase in the object distance. Which process to perform is determined by operation on a processing type selector. | 04-26-2012 |
20140241500 | RADIATION BLOCKING UNIT, RADIOGRAPHIC IMAGING APPARATUS, AND RADIOGRAPHIC IMAGING METHOD - The present invention provides a radiation blocking unit including: an attachment member that is attachable between sources and an object table surface to which radiation from a radiation source and visible light from a visible light source are emitted, the sources including the radiation source and the visible light source; a radiation blocking portion, disposed on the attachment member, that transmits the illuminated visible light to an overlapping incidence region on the object table surface in which an incidence region of the radiation and an incidence region of the visible light overlap, and that blocks the irradiated radiation outside the overlapping incidence region; and a visible light blocking portion, disposed on the attachment member, that transmits the irradiated radiation to the overlapping incidence region, and blocks the illuminated visible light outside the overlapping incidence region. | 08-28-2014 |
Hiroki Yasuda, Kanagawa JP
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20130043137 | NOVEL COMPOUND AND USE THEREOF - Provided is a copper plating technique that enables the filling of high aspect-ratio via-holes and through-holes in semiconductor substrates such as silicon substrates, organic material substrates or ceramic substrates. The disclosed technique involves a tertiary amine compound, which is obtained by reacting a heterocyclic compound with the epoxy group of a glycidyl ether group of a compound that has three or more glycidyl ether groups, and a quaternary amine compound thereof, as well as a copper plating additive, a copper plating bath, and a copper plating method employing the compounds. | 02-21-2013 |
20160137673 | SILICON OLIGOMER AND PRODUCTION METHOD THEREFOR - An object of the present invention is to provide a silicon oligomer having a novel function that has not been achieved by a conventional condensation product of water and a tetraalkoxysilane. Provided are a silicon oligomer represented by the following formula (I) and a production method therefor: | 05-19-2016 |
Kaoru Yasuda, Kanagawa JP
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20110290398 | PNEUMATIC TIRE FOR PASSENGER CAR AND METHOD OF MANUFACTURING THE SAME - A pneumatic tire for a passenger car includes a belt layer and a belt cover layer formed by winding a steel cord member in the tire circumference direction on the outer peripheral side of the belt layer. The steel cord member has a structure in which element wires made of steel and having a diameter smaller than 0.18 mm are twisted together to form each strand and the strands are twisted together in the same direction as the direction of twisting of the element wires. The twist pitch on each of the strands is smaller than the twist pitch on the steel cord member, the twist pitch on the strand is 1.0 mm to 2.1 mm, and the twist pitch on the steel cord member is 2.0 mm to 5.25 mm. | 12-01-2011 |
20130206302 | PNEUMATIC TIRE - The present invention provides a pneumatic tire by which workability when molding a tire and tire durability performance can be enhanced without increasing tire weight when providing a reinforcing layer formed by aligning a plurality of monofilament steel wires and embedding this plurality of monofilament steel wires in rubber. The pneumatic tire of the present invention includes a reinforcing layer formed by aligning a plurality of monofilament steel wires and embedding said monofilament steel wires in rubber. Each of the monofilament steel wires is provided with twisting around an axis thereof, and a wire surface twisting angle θ with respect to an axial direction of the monofilament steel wires is not less than 1°. | 08-15-2013 |
Katsuhiro Yasuda, Kanagawa JP
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20110193631 | AMPLIFIER - According to embodiments, in a case that a source voltage is lowered and a potential difference between the source voltage and a ripple terminal voltage is below a constant potential difference, the ripple terminal voltage is lowered until the ripple terminal voltage reaches a first threshold value when a lowered value of the source voltage is equal to or larger than a predetermined voltage that exceeds the first threshold value by the constant potential difference, and the ripple terminal voltage is lowered until the ripple terminal voltage reaches a second threshold value smaller than the first threshold value when the lowered value of the source voltage is below the predetermined voltage. | 08-11-2011 |
Kazuhiro Yasuda, Kanagawa JP
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20100047654 | FUEL CELL SYSTEM - The fuel cell system of liquid fuel direct supply type includes an proton-conductive solid polymer film as an electrolyte, a cell part containing an anode and a cathode disposed to face each other with the proton-conductive solid polymer film intervening therebetween, a filter for removing metallic ions from a liquid fuel, a fuel supplying line for supplying the liquid fuel to the cell part through the filter, and an oxygen supplying line for supplying oxygen to the cell part, and the filter contains an inorganic ion exchange material. | 02-25-2010 |
Kazunori Yasuda, Kanagawa JP
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20100189130 | Data processing apparatus and method and encoding device - A data processing apparatus able to start decoding at a timing earlier than the conventional timing and able to reduce the storage capacity required for a storing means for storing the encoded data until a decoding side decodes the input encoded data in comparison with the conventional storage capacity, which apparatus selects frame data from frame data f( | 07-29-2010 |
Keigo Yasuda, Kanagawa JP
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20100294380 | SOLENOID-DRIVEN FLOW CONTROL VALVE - A working fluid flow rate flowing from a second port ( | 11-25-2010 |
Keizo Yasuda, Kanagawa JP
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20110317196 | PRINT/COPY CONTROL SYSTEM - A print/copy control system including a processing unit which includes a first unit that receives a set of print/copy conditions selected by a user, a second unit that receives a standard set of print/copy conditions of an image forming device designated by the user, a third unit that receives other selectable sets of print/copy conditions of the image forming device, and a display unit that displays a listing of each of the standard set of print/copy conditions of the image forming device, the set of print/copy conditions selected by the user, and the other selectable sets of print/copy conditions of the image forming device for comparison. | 12-29-2011 |
Kenichi Yasuda, Kanagawa JP
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20110020565 | DRYING METHOD AND DEVICE - According to one aspect of the present invention, a drying device which dries a coating film formed on a substrate with hot air, including an infrared radiator which heats the coating film at a temperature equal to or lower than the temperature of the hot air is provided. The hot air drying device includes the infrared radiator which heats the coating film. Accordingly, the temperature of the coating film in the initial drying stage can be quickly raised by the infrared radiator in comparison with a case in which the coating film is dried only with the hot air. Also, since the infrared radiator heats the coating film at a temperature equal to or lower than the hot air temperature, there is no risk of reducing the quality of the coating film by overheating the coating film. Accordingly, energy consumption can be reduced, and the drying speed can be increased. Any member may be used as the infrared radiator as long as the member can radiate infrared rays to heat the coating film at a low temperature equal to or lower than the hot air temperature. For example, a panel infrared heater may be employed. | 01-27-2011 |
20120100294 | COATED FILM MANUFACTURING METHOD AND COATING MACHINE - A coated film manufacturing method and a coating machine are provided which can prevent deformation of a die coater due to evaporation of a coating liquid and prevent surface deficiency occurring when starting the coating. A coating machine is prepared which includes a die coater having a manifold, a slot communicating with the manifold, and a lip face formed at an end of the slot, a heat-insulating plate being disposed in a region below the lip face of the die coater and having a tapered top end portion, and a depressurizing chamber being disposed upstream in a web conveying direction from the die coater. The coating machine is made to stand by at a position for forming a clearance greater than a predetermined clearance between the coating machine and the web at the time of coating while flowing the coating liquid from the die coater. | 04-26-2012 |
20150192704 | METHOD FOR PRODUCING OPTICAL FILM - The method for producing an optical film includes a film-curing step of curing the coating to form a liquid crystal layer by supporting a second surface of the transparent support by a back-up roller while heating, and irradiating the coating with ultraviolet light, wherein, when an reaching temperature of the transparent support in curing of the coating is set to 80° C. or higher, and P [N/m | 07-09-2015 |
Koichi Yasuda, Kanagawa JP
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20140037921 | OPTICAL INFORMATION RECORDING MEDIUM AND LAMINATE FOR OPTICAL INFORMATION RECORDING MEDIUM - An optical information recording medium includes multiple laminated resin layers. At least one of interfaces between the resin layers has a refractive index which gradually changes in a thickness direction of the resin layers. | 02-06-2014 |
20140050877 | OPTICAL INFORMATION RECORDING MEDIUM AND OPTICAL INFORMATION RECORDING MEDIUM LAMINATE - There is provided an optical information recording medium including a plurality of laminated resin layers, and an inorganic layer that is formed in an interface between the resin layers. Storage elastic moduli are different when the interface is assumed to be a boundary. An information signal is recorded in the interface. | 02-20-2014 |
Kosuke Yasuda, Kanagawa JP
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20160139169 | SEMICONDUCTOR DEVICE, PORTABLE TERMINAL DEVICE, AND OPERATION DETECTING METHOD - A semiconductor device in provided, the semiconductor device including an input unit to which an acceleration signal representing acceleration is input from an acceleration detecting unit installed in a portable terminal device, and a detection unit which detects that a tap operation is performed on the portable terminal device, in a case in which the acceleration signal input to the input unit reaches both of a first threshold value set on the positive side and a second threshold value set on the negative side and a period until the acceleration signal exceeds any one of the first threshold value and the second threshold value and then exceeds the other threshold value is equal to or more than a predetermined first period and is equal to or less than a second period larger than the first period. | 05-19-2016 |
Kotaro Yasuda, Kanagawa JP
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20100045901 | OPTICAL FILM AND RETARDATION SHEET, AND LIQUID CRYSTAL COMPOUND - A compound of formula (1): wherein A | 02-25-2010 |
20100208175 | LIQUID-CRYSTAL DISPLAY DEVICE - Disclosed is a liquid-crystal display device comprising a polarizing plate comprising a polarizing element and a thermoplastic-resin film which comprises a lactone ring-having polymer and satisfies the following formulas (I) and (II): (I) 0=|Re(630)|=10, and |Rth(630)|=25 (II) |Re(400)−Re(700)|=10, and |Rth(400)−Rth(700)|=35 wherein Re(?) means retardation (nm) in plane at a wavelength ? nm; and Re(?) means retardation (nm) along the thickness direction at a wavelength ? nm. | 08-19-2010 |
Kouichi Yasuda, Kanagawa JP
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20130007781 | MULTILAYER OPTICAL RECORDING MEDIUM - An optical recording medium is provided. The optical recording medium includes a multilayer including an N (N≦5) number of interfaces capable of reflecting incident light. | 01-03-2013 |
Koutarou Yasuda, Kanagawa JP
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20090244446 | LIQUID CRYSTAL DISPLAY DEVICE - A liquid crystal display device containing a first polarizing plate, a first retardation film, a liquid crystal cell, a second retardation film, and a second polarizing plate in this order from a light incident side, wherein an absorption axis of the first polarizing plate and an absorption axis of the second polarizing plate are orthogonal to each other, and wherein the first retardation film is configured to change a polarization state of light to a state of a fixed point before the light enters the liquid crystal cell so as to allow the liquid crystal cell transmit the light having the polarization state of the fixed point | 10-01-2009 |
Kyounei Yasuda, Kanagawa JP
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20080239680 | METHOD OF FORMING BURIED WIRING LINES, AND SUBSTRATE AND DISPLAY DEVICE USING THE SAME - An method of forming buried wiring lines makes it possible not to limit usable materials for an insulative plate to those having excellent heat resistance and to improve the corrosion resistance of the terminals provided for the buried wiring lines. The surface of an insulative plate is selectively etched using a mask formed on the surface, thereby forming grooves in the surface. A metallic nanoparticle ink is placed over the whole surface of the plate to fill the grooves with the ink, where the mask is being left. The ink is heated for preliminary curing to form a metallic nanoparticle ink film. The part of the film placed on the mask is selectively removed by detaching the mask, thereby leaving the remainder of the film in the grooves. The remaining film in the grooves is heated for main curing, thereby forming desired buried wiring lines. | 10-02-2008 |
Megumi Yasuda, Kanagawa JP
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20120092432 | IMAGE FORMING DEVICE, IMAGE FORMING SYSTEM, AND STORAGE MEDIUM THAT STORES A CONTROL PROGRAM OF AN IMAGE FORMING DEVICE - An image forming device is provided. The image forming device includes: a forming component that forms an index, at a formation position, on a recording medium that is conveyed in a first direction and passes the formation position; an acquiring component that acquires measurement results, from a measuring component, of a width, along a second direction that intersects the first direction, of the recording medium; and a formation control component that carries out control that causes the index to be formed by the forming component at a position that is at one end portion side, along the second direction, of the recording medium, and that is apart, along the second direction and by a distance corresponding to the width acquired by the acquiring component, from a formation reference position that is set at another end portion side, along the second direction, of the recording medium, is provided. | 04-19-2012 |
Mikita Yasuda, Kanagawa JP
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20110167106 | COMMUNICATION TERMINAL APPARATUS, PROGRAM, INFORMATION PROCESSING SYSTEM, AND METADATA PROVIDING SERVER - There is provided a communication terminal apparatus including a position information acquisition section which acquires position information indicating a current position, a velocity calculation section which calculates a moving velocity based on variations in amount and time of the position information acquired by the position information acquisition section, and a metadata acquisition section which determines a reference point to be a reference of an acquisition area of position metadata based on the position information and the moving velocity, determines an area size indicating a size of the acquisition area depending on the moving velocity, and acquires position metadata within an acquisition area specified based on the reference point and the area size from a metadata providing server that provides position metadata. | 07-07-2011 |
20110307169 | Information Processing Apparatus, Information Processing Method, Information Processing System, and Program - There is provided an information processing apparatus including a map matching section configured to extract, based on a result obtained by measuring a position of a user, a candidate for a road along which the user is proceeding, and a selection section configured to select a road along which the user is proceeding from among candidates for the road, based on an analysis result obtained by recognizing a character written on a signpost included in a video in which a view in a travelling direction of the user is shot. | 12-15-2011 |
20150350283 | CONTENT SERVER, CONTENT DISTRIBUTION METHOD, CONTENT DISTRIBUTION SYSTEM, CLIENT DEVICE, AND CONTENT ACQUISITION - There is provided a content server including a storage unit configured to store a plurality of encoded data obtained by encoding same contents at different bit rates, and a communication unit configured to transmit a data file including access information related to a part of encoded data among the plurality of encoded data to a client device, and transmit encoded data requested by the client device based on the data file to the client device. | 12-03-2015 |
Naohiro Yasuda, Kanagawa JP
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20090002778 | Image processing apparatus, image reading apparatus, and image processing system - An image reading apparatus scans an original and generates image data of the original, sequentially transmits the image data while scanning the original, detects a predetermined particular image from the image data, and transmits a detection result of detecting the particular image. An image processing apparatus receives the image data and the detection result from the image reading apparatus, stores the image data in a storage unit, determines whether the detection result is received, and when it is determined that the detection result is received, restricts usage of the image data stored in the storage unit. | 01-01-2009 |
Reiko Yasuda, Kanagawa JP
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20130072491 | PROPHYLACTIC OR THERAPEUTIC AGENT FOR DIABETES OR OBESITY - An object is to provide a CaSR agonist agent that has excellent CaSR agonist effects, and particularly, a pharmaceutical product that can prevent or remedy diabetes or obesity by the effect of CaSR activation. The aforementioned object is achieved by a composition that contains a compound represented by the following General Formula (I) or a salt thereof (refer to the Description for the definitions of the symbols used in the formula). | 03-21-2013 |
Ryoichi Yasuda, Kanagawa JP
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20100078639 | THIN FILM SEMICONDUCTOR DEVICE FABRICATION METHOD AND THIN FILM SEMICONDUCTOR DEVICE - The present invention provides a method for making a thin film semiconductor device having a bottom-gate, bottom-contact-type thin film transistor structure finer in size with satisfactory characteristics, in which the interface between a gate insulating film and a thin film semiconductor layer can be maintained at satisfactory conditions without being affected by formation of source/drain electrodes. A first gate insulating film ( | 04-01-2010 |
20100264404 | ORGANIC ELECTRONIC DEVICE, METHOD FOR PRODUCTION THEREOF, AND ORGANIC SEMICONDUCTOR MOLECULE - An organic electronic device which has stable physical properties and which allows easy production is provided. The organic electronic device has a conductive path including fine particles, a first organic semiconductor molecule which has a first conductive type and binds at least two of the fine particles together, and a second organic semiconductor molecule which has a second conductive type and is captured in a state of noncovalent bond in a molecule recognition site that exists among the fine particles. | 10-21-2010 |
Ryouhei Yasuda, Kanagawa JP
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20140118247 | CONTROL APPARATUS, CONTROL METHOD, PROGRAM, INPUT SIGNAL RECEIVING APPARATUS, OPERATION INPUT APPARATUS, AND INPUT SYSTEM - There is provided a control apparatus including an input signal receiving unit that receives a first input signal generated in accordance with an operation on a first operation receiving unit provided on a first surface of an operation input apparatus and a second input signal generated in accordance with an operation on a second operation receiving unit provided on a second surface, which is different from the first surface, of the operation input apparatus, an opposing information acquisition unit that acquires opposing information indicating which surface of the first surface and the second surface is opposed to an operator of the operation input apparatus, and a processing controller that changes one of first processing corresponding to the first input signal and second processing corresponding to the second input signal based on the acquired opposing information. | 05-01-2014 |
20150116473 | INFORMATION PROCESSING APPARATUS, INFORMATION PROCESSING METHOD, AND PROGRAM - An information processing apparatus including an evaluation value calculation unit configured to calculate an evaluation value for each range identified based on information about a position of a line of sight of a user and range information indicating the range of calculating the evaluation value concerning the line of sight. | 04-30-2015 |
20150154000 | INFORMATION PROCESSING DEVICE, INFORMATION PROCESSING METHOD, AND PROGRAM - There is provided an information processing device including a user interface unit which receives a user's operation, a playback control unit which performs an editing process on content playback control information, depending on the user's operation received by the user interface unit, and controls an operation of playing back content based on the content playback control information, and a display unit which displays a played-back image of the content. | 06-04-2015 |
20150253939 | INFORMATION PROCESSING APPARATUS AND INFORMATION PROCESSING METHOD - There is provided an information processing apparatus including a line-of-sight position acquisition unit configured to acquire a line-of-sight position of a user, a state control unit configured to perform a transition to an active state in response to a first operation performed by the user, the active state being capable of selecting an object by the user through a line of sight of the user, and a processing unit configured to determine an object corresponding to the acquired line-of-sight position as a selected object in response to a second operation performed by the user subsequent to the first operation. | 09-10-2015 |
Ryouichi Yasuda, Kanagawa JP
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20130134427 | TRANSISTOR, DISPLAY, AND ELECTRONIC APPARATUS - A transistor includes: a gate electrode; a semiconductor layer facing the gate electrode with an insulating layer in between; a pair of source-drain electrodes electrically connected to the semiconductor layer; and a contact layer provided in a moving path of carriers between each of the pair of source-drain electrodes and the semiconductor layer, the contact layer having end surfaces covered with the source-drain electrode. | 05-30-2013 |
20130277650 | SIGNAL TRANSMISSION UNIT, DISPLAY UNIT, AND ELECTRONIC APPARATUS - An electronic apparatus (for example a display unit) including an active region (for example a display region) and a peripheral region. In the active region are disposed: active units (for example pixel circuit), a first wiring line connected to an active unit, a second wiring line connected to an active unit, and a third wiring line disposed in a different layer than the second wiring line and connected to the second wiring line. The first wiring line and the third wiring line extend out of the active region into the peripheral region, and exit the display region on a same side of the display region. A first peripheral circuit for communicating with the first wiring line and a second peripheral circuit for communicating with the second wiring line are disposed in the peripheral region, and the third wiring line is connected to the second peripheral circuit. | 10-24-2013 |
20140239286 | DRIVING CIRCUIT BOARD, METHOD OF MANUFACTURING THE SAME, DISPLAY UNIT, AND ELECTRONIC APPARATUS - There are provided a driving circuit board and a method of manufacturing the same as well as a display unit and an electronic apparatus in which a number of forming steps is small and usage efficiency of materials is improved. The display unit according to the present disclosure includes: a pair of source-drain electrodes; an organic semiconductor layer forming a channel region, and provided in contact with the source-drain electrodes; an insulating layer formed of one or more layers, the insulating layer having a through hole penetrating to the source-drain electrodes, and the insulating layer being provided on the organic semiconductor layer and the source-drain electrodes; a gate electrode provided at a position corresponding to the channel region; and a pixel electrode electrically connected to the source-drain electrodes through the through hole, the pixel electrode being made of a same material as the gate electrode with a same film thickness as the gate electrode, and the pixel electrode being provided on the insulating layer. | 08-28-2014 |
20150179707 | TRANSISTOR, DISPLAY, AND ELECTRIC APPARATUS - A transistor includes: a gate electrode; a semiconductor layer facing the gate electrode with an insulating layer in between; a pair of source-drain electrodes electrically connected to the semiconductor layer; and a contact layer provided in a moving path of carriers between each of the pair of source-drain electrodes and the semiconductor layer, the contact layer having end surfaces covered with the source-drain electrode. | 06-25-2015 |
20160087231 | DRIVING CIRCUIT BOARD, METHOD OF MANUFACTURING THE SAME, DISPLAY UNIT, AND ELECTRONIC APPARATUS - There are provided a driving circuit board and a method of manufacturing the same as well as a display unit and an electronic apparatus in which a number of forming steps is small and usage efficiency of materials is improved. The display unit includes: a pair of source-drain electrodes; an organic semiconductor layer forming a channel region in contact with the source-drain electrodes; an insulating layer f having a through hole penetrating to the source-drain electrodes, and the insulating layer on the organic semiconductor layer and the source-drain electrodes; a gate electrode provided at a position corresponding to the channel region; and a pixel electrode electrically connected to the source-drain electrodes through the through hole, the pixel electrode being made of a same material as the gate electrode with a same film thickness as the gate electrode, and the pixel electrode on the insulating layer. | 03-24-2016 |
Shingo Yasuda, Kanagawa JP
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20090247260 | Drawing Machine and Game Apparatus Using the Same - The present invention provides a drawing machine and a game apparatus using the same by which it is easier to give the participants of the drawing an impression like drawing is carried out fairly when the computer drawing in which a winning-probability of each of drawing-objects is changed is carried out. | 10-01-2009 |
Shuichiro Yasuda, Kanagawa JP
Patent application number | Description | Published |
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20090173930 | MEMORY ELEMENT AND MEMORY DEVICE - A memory device of a resistance variation type, in which data retaining characteristic at the time of writing is improved, is provided. The memory device includes: a plurality of memory elements in which a memory layer is provided between a first electrode and a second electrode so that data is written or erased in accordance with a variation in electrical characteristics of the memory layer; and pulse applying means applying a voltage pulse or a current pulse selectively to the plurality of memory elements. The memory layer includes an ion source layer including an ionic-conduction material and at least one kind of metallic element, and the ion source layer further contains oxygen. | 07-09-2009 |
20100195371 | MEMORY ELEMENT AND MEMORY DEVICE - The capability of retaining a resistance value of a stored state and an erased state is improved in a resistance variation-type memory device. A memory layer | 08-05-2010 |
20100254178 | STORAGE DEVICE AND INFORMATION RE-RECORDING METHOD - A storage device capable of reducing a number of cycles necessary for a verify at a time of multi-value recording is provided. An initial value of a potential difference VCG between a gate and a source of a switching transistor at the time of the verify is set to a value varied in accordance with a resistance value level of multi-value information. In the case where a writing side performs a 3-value recording, when “01” is the information, an initial value VGS | 10-07-2010 |
20100259967 | MEMORY CELL - A memory cell is provided, in which a resistance value is appropriately controlled, thereby a variable resistance element may be applied with a voltage necessary for changing the element into a high or low resistance state. A storage element | 10-14-2010 |
20100259968 | STORAGE DEVICE AND INFORMATION RERECORDING METHOD - A storage device that improves ability of adjusting a resistance value level in recording and enables stable verification control is provided. VWL supplied from a second power source to a control terminal of a transistor is increased (increase portion: ΔVWL) for every rerecording by verification control by a WL adjustment circuit. In the case where a variable resistive element is able to record multiple values, ΔVWL is a value variable for every resistance value level of multiple value information. That is, ΔVWL is a value variable according to magnitude relation of a variation range of recording resistance of the variable resistive element due to a current. In the region where the variation range of the recording resistance is large (source-gate voltage VGS of the transistor is small), ΔVWL is small, while in the region where the variation range of the recording resistance is small (VGS is large), ΔVWL is large. | 10-14-2010 |
20110095255 | MEMORY DEVICE AND FABRICATION PROCESS THEREOF - A memory device that includes a resistive-change memory element, the memory device includes: a first memory element that includes a first resistive-change layer and a first electrode connected to the first resistive-change layer; and a second memory element that includes a second resistive-change layer and a second electrode connected to the second resistive-change layer, wherein at least one of the thickness and the material of the second resistive-change layer and the area of the second electrode in contact with the second resistive-change layer is different from the corresponding one of the thickness and the material of the first resistive-change layer and the area of the first electrode in contact with the first resistive-change layer. | 04-28-2011 |
20110149635 | STORAGE DEVICE AND INFORMATION RERECORDING METHOD - A storage device capable of decreasing the number of voltages necessitating control and decreasing peripheral circuit size is provided. A first pulse voltage (VBLR) is supplied from a first power source through a bit line BLR to an electrode of a variable resistive element. A second pulse voltage (VWL) for selecting a cell is supplied from a second power source through a word line WL to a control terminal of a transistor. A third pulse voltage (VBLT) is supplied from a third power source though a bit line BLT to a second input/output terminal of the transistor. At the time of rewriting information, the voltage value (VBLT) of the third power source is adjusted by an adjustment circuit. Thereby, a cell voltage and a cell current are changed (decreased or increased). | 06-23-2011 |
20110155987 | MEMORY ELEMENT AND MEMORY DEVICE - A memory element capable of simultaneously satisfying the number of repeating operation times and a low-voltage operation characteristic which are in a tradeoff relation is provided. The memory element has a high-resistivity layer and an ion source layer between a bottom electrode and a top electrode. The high-resistivity layer is made of an oxide containing Te. Any of elements other than Te such as Al, Zr, Ta, Hf, Si, Ge, Ni, Co, Cu, and Au may be added. In the case of adding Al to Te and also adding Cu and Zr, the composition ratio of the high-resistivity layer is preferably adjusted in the ranges of 30≦Te≦100 atomic %, 0≦Al≦70 atomic %, and 0≦Cu+Zr≦36 atomic % except for oxygen. The ion source layer is made of at least one kind of metal elements and at least one kind of chalcogen elements of Te, S, and Se. | 06-30-2011 |
20110155988 | MEMORY ELEMENT AND MEMORY DEVICE - Provided are a memory element and a memory device. A memory layer is provided with an ion source layer. The ion source layer includes Zr (zirconium), Cu (copper), and Al (aluminum) as a metal element together with an ion conductive material such as S (sulfur), Se (selenium), and Te (tellurium) (chalcogen element). The amount of Al in the ion source layer is 30 to 50 atomic percent. The amount of Zr is preferably 7.5 to 25 atomic percent, and more preferably, the composition ratio of Zr to the chalcogen element in total included in the ion source layer (=Zr (atomic percent)/chalcogen element in total (atomic percent)) falls within a range from 0.2 to 0.74. | 06-30-2011 |
20110175049 | MEMORY COMPONENT AND MEMORY DEVICE - A memory component includes: a first electrode; a memory layer; and a second electrode in this order, wherein the memory layer includes a high resistance layer which includes tellurium (Te) as the chief component among anion components and is formed on the first electrode side; and an ion source layer which includes at least one kind of metal element and at least one kind of chalcogen element among tellurium (Te), sulfur (S) and selenium (Se) and is formed on the second electrode side. | 07-21-2011 |
20110194329 | MEMORY COMPONENT, MEMORY DEVICE, AND METHOD OF OPERATING MEMORY DEVICE - A memory component includes: a first electrode; a memory layer; and a second electrode which are provided in that order, wherein the memory layer includes an ion source layer containing aluminum (Al) together with at least one chalcogen element selected from the group consisting of tellurium (Te), sulfur (S), and selenium (Se), and a resistance variable layer provided between the ion source layer and the first electrode and containing an aluminum oxide and at least one of a transition metal oxide and a transition metal oxynitride having a lower resistance than the aluminum oxide. | 08-11-2011 |
20120008369 | MEMORY ELEMENT AND DRIVE METHOD FOR THE SAME, AND MEMORY DEVICE - A memory element capable of increasing capacity with an improvement of distribution of resistance in the high-resistance state, a drive method therefor, and a memory device are provided. The memory element includes first and second electrodes, and a plurality of resistance change elements electrically connected in series between the first and second electrodes, whose resistance values are reversibly changeable in response to application of a voltage to the first and second electrodes, and changeable to the same resistance state relative to the voltage application. | 01-12-2012 |
20120008370 | MEMORY ELEMENT AND MEMORY DEVICE - A memory element and a memory device with improved controllability over resistance change by applied voltage are provided. The memory element includes a first electrode, a memory layer, and a second electrode in this order. The memory layer includes a resistance change layer provided on the first electrode side, and an ion source layer provided on the second electrode side and is higher in resistance value than the resistance change layer. A resistance value of the resistance change layer is changeable in response to a composition change by applied voltage to the first and second electrodes | 01-12-2012 |
20120068146 | MEMORY ELEMENT AND MEMORY DEVICE - There are provided a memory element and a memory device with a smaller range of element-to-element variation of electrical characteristics. The memory element includes a first electrode, a memory layer, and a second layer in this order. The memory layer includes a resistance change layer including a plurality of layers varying in diffusion coefficient of mobile atoms, and an ion source layer disposed between the resistance change layer and the second electrode. | 03-22-2012 |
20120069631 | MEMORY ELEMENT AND MEMORY DEVICE - A memory device of a resistance variation type, in which data retaining characteristic at the time of writing is improved, is provided. The memory device includes: a plurality of memory elements in which a memory layer is provided between a first electrode and a second electrode so that data is written or erased in accordance with a variation in electrical characteristics of the memory layer; and pulse applying means applying a voltage pulse or a current pulse selectively to the plurality of memory elements. The memory layer includes an ion source layer including an ionic-conduction material and at least one kind of metallic element, and the ion source layer further contains oxygen. | 03-22-2012 |
20120145987 | MEMORY ELEMENT AND METHOD OF MANUFACTURING THE SAME, AND MEMORY DEVICE - A memory element with reduced degradation of memory characteristics that is caused by deterioration of a memory layer, a method of manufacturing the memory element, and a memory device are provided. The memory element includes a first electrode, a memory layer, and a second electrode in this order. The memory layer includes a resistance change layer containing fluoride, and an ion source layer disposed between the resistance change layer and the second electrode. | 06-14-2012 |
20120218808 | MEMORY ELEMENT AND MEMORY DEVICE - There are provided a memory element and a memory device with improved repetition characteristics during operations at a low voltage and current. The memory element includes a first electrode, a memory layer, and a second electrode in this order. The memory layer includes a resistance change layer disposed on the first electrode side, and an ion source layer disposed on the second electrode side, and having a resistivity of 2.8 mΩcm or higher but lower than 1 Ωcm. | 08-30-2012 |
20120236625 | MEMORY ELEMENT AND MEMORY DEVICE - There are provided a memory element and a memory device with improved writing and erasing characteristics during operations at a low voltage and a low current. The memory element includes a first electrode, a memory layer, and a second electrode in this order. The memory layer includes a resistance change layer provided on the first electrode side, an ion source layer provided on the second electrode side, an intermediate layer provided between the resistance change layer and the ion source layer, and a barrier layer provided at least either between the ion source layer and the intermediate layer, or between the intermediate layer and the resistance change layer, and the barrier layer containing a transition metal or a nitride thereof. | 09-20-2012 |
20120294063 | MEMORY ELEMENT AND MEMORY DEVICE - There are provided a memory element and a memory device excellently operating at a low current, and having the satisfactory retention characteristics. The memory element includes a first electrode, a memory layer, and a second electrode in this order. The memory layer includes a resistance change layer disposed on the first electrode side, and being in a single- or multi-layer structure including a layer containing a highest percentage of tellurium (Te) as an anionic component, and an ion source layer disposed on the second electrode side, and containing a metallic element and one or more chalcogen elements including tellurium (Te), sulfur (S), and selenium (Se) with aluminum (Al) of 27.7 atomic % or more but 47.4 atomic % or less. | 11-22-2012 |
20120314479 | MEMORY ELEMENT AND MEMORY DEVICE - A memory element includes: a memory layer disposed between a first electrode and a second electrode. The memory layer includes: an ion source layer containing one or more metallic elements, and one or more chalcogen elements of tellurium (Te), sulfur (S), and selenium (Se); and a resistance change layer disposed between the ion source layer and the first electrode, the resistance change layer including a layer which includes tellurium and nitrogen (N) and is in contact with the ion source layer. | 12-13-2012 |
20130001496 | MEMORY ELEMENT, METHOD OF MANUFACTURING THE SAME, AND MEMORY DEVICE - A memory element includes: a first electrode, a memory layer, and a second electrode in this order. The memory layer includes a resistance change layer provided on the first electrode side, and an ion source layer containing one or more of metallic elements, and the ion source layer being provided on the second electrode side. The ion source layer includes a first ion source layer and a second ion source layer, the first ion source layer containing one or more of chalcogen elements of tellurium (Te), sulfur (S), and selenium (Se) and being provided on the resistance change layer side, and the second ion source layer containing the chalcogen element with a content different from a content in the first ion source layer and being provided on the second electrode side. | 01-03-2013 |
20130001497 | MEMORY ELEMENT, METHOD OF MANUFACTURING THE SAME, AND MEMORY DEVICE - A memory element, including: a first electrode, a memory layer, and a second electrode in this order. The memory layer includes a resistance change layer containing an oxide, and the resistance change layer being provided on the first electrode side, and an ion source layer in a stacking structure of two or more of a unit ion source layer, the unit ion source layer including a first layer and a second layer, the first layer containing one or more of chalcogen elements of tellurium (Te), sulfur (S), and selenium (Se) and an easy-to-move element that is easy to move in the memory layer, and having a density distribution of the easy-to-move element from the first electrode to the second electrode, and the second layer containing a difficult-to-move element that is difficult to move in the memory layer. | 01-03-2013 |
20130240818 | MEMORY COMPONENT, MEMORY DEVICE, AND METHOD OF OPERATING MEMORY DEVICE - A memory component including first and second electrodes with a memory layer therebetween, the memory layer having first and second memory layers, the first memory layer containing aluminum and a chalcogen element of tellurium, the second memory layer between the first memory layer and the first electrode and containing an aluminum oxide and at least one of a transition metal oxide and a transition metal oxynitride having a lower resistance than the aluminum oxide. | 09-19-2013 |
20130299765 | MEMORY DEVICE AND FABRICATION PROCESS THEREOF - A resistive-change memory element-containing memory device including: a first memory element that includes a first resistive-change layer and a first electrode connected to the first resistive-change layer; and a second memory element that includes a second resistive-change layer and a second electrode connected to the second resistive-change layer, wherein at least one of the thickness and the material of the second resistive-change layer and the area of the second electrode in contact with the second resistive-change layer is different from the corresponding one of the thickness and the material of the first resistive-change layer and the area of the first electrode in contact with the first resistive-change layer. | 11-14-2013 |
20140008600 | MEMORY ELEMENT AND MEMORY DEVICE - A memory element capable of simultaneously satisfying the number of repeating operation times and a low-voltage operation characteristic which are in a tradeoff relation is provided. The memory element has a high-resistivity layer and an ion source layer between a bottom electrode and a top electrode. The high-resistivity layer is made of an oxide containing Te. Any of elements other than Te such as Al, Zr, Ta, Hf, Si, Ge, Ni, Co, Cu, and Au may be added. In the case of adding Al to Te and also adding Cu and Zr, the composition ratio of the high-resistivity layer is preferably adjusted in the ranges of 30≦Te≦100 atomic %, 0≦Al ≦70 atomic %, and 0≦Cu+Zr≦36 atomic % except for oxygen. The ion source layer is made of at least one kind of metal elements and at least one kind of chalcogen elements of Te, S, and Se. | 01-09-2014 |
20140021434 | MEMORY ELEMENT AND MEMORY DEVICE - A memory element and a memory device, the memory element including a first electrode, a memory layer, and a second electrode in this order. The memory layer includes a resistance change layer provided on the first electrode side, and an ion source layer provided on the second electrode side and is higher in resistance value than the resistance change layer. A resistance value of the resistance change layer is changeable in response to a composition change by applied voltage to the first and second electrodes | 01-23-2014 |
20140084235 | MEMORY COMPONENT AND MEMORY DEVICE - A memory component having a first electrode; a second electrode; and a memory layer between the first and second electrodes. The memory layer includes (a) on a first electrode side thereof, a high resistance layer that is composed of a plurality of layers, at least one of the plurality of layers including tellurium (Te) as the chief component among anion components, and (b) on a second electrode side thereof, an ion source layer with at least one kind of metal element and at least one kind of chalcogen element selected from the group consisting of tellurium (Te), sulfur (S) and selenium (Se). The memory component is configured to change a resistance of the high resistance layer in accordance with a voltage or current pulse stress applied between the first and second electrodes. | 03-27-2014 |
20140183437 | MEMORY ELEMENT AND MEMORY DEVICE - A memory element with a first electrode, a memory layer, and a second electrode in this order. The memory layer includes a resistance change layer provided on the first electrode side, an ion source layer provided on the second electrode side, an intermediate layer provided between the resistance change layer and the ion source layer, and a barrier layer provided at least either between the ion source layer and the intermediate layer, or between the intermediate layer and the resistance change layer. | 07-03-2014 |
20140183438 | MEMORY COMPONENT, MEMORY DEVICE, AND METHOD OF OPERATING MEMORY DEVICE - A memory component including first and second electrodes with a memory layer therebetween, the memory layer having first and second memory layers, the first memory layer containing aluminum and a chalcogen element of tellurium, the second memory layer between the first memory layer and the first electrode and containing an aluminum oxide and at least one of a transition metal oxide and a transition metal oxynitride having a lower resistance than the aluminum oxide. | 07-03-2014 |
20140376301 | MEMORY ELEMENT AND MEMORY DEVICE - A memory element includes: a memory layer disposed between a first electrode and a second electrode. The memory layer includes: an ion source layer containing one or more metallic elements, and one or more chalcogen elements of tellurium (Te), sulfur (S), and selenium (Se); and a resistance change layer disposed between the ion source layer and the first electrode, the resistance change layer including a layer which includes tellurium and nitrogen (N) and is in contact with the ion source layer. | 12-25-2014 |
20150072499 | MEMORY ELEMENT WITH ION SOURCE LAYER AND MEMORY DEVICE - A method of making memory element, including: a first electrode, a memory layer, and a second electrode in this order. The memory layer includes a resistance change layer containing an oxide, and the resistance change layer being provided on the first electrode side, and an ion source layer in a stacking structure of two or more of a unit ion source layer, the unit ion source layer including a first layer and a second layer, the first layer containing one or more of chalcogen elements of tellurium (Te), sulfur (S), and selenium (Se) and an easy-to-move element that is easy to move in the memory layer, and having a density distribution of the easy-to-move element from the first electrode to the second electrode, and the second layer containing a difficult-to-move element that is difficult to move in the memory layer. | 03-12-2015 |
20160079528 | MEMORY COMPONENT, MEMORY DEVICE, AND METHOD OF OPERATING MEMORY DEVICE - A memory component including first and second electrodes with a memory layer therebetween, the memory layer having first and second memory layers, the first memory layer containing aluminum and a chalcogen element of tellurium, the second memory layer between the first memory layer and the first electrode and containing an aluminum oxide and at least one of a transition metal oxide and a transition metal oxynitride having a lower resistance than the aluminum oxide. | 03-17-2016 |
Takahiro Yasuda, Kanagawa JP
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20150336751 | LEVITATION AIR PLATE - To provide a levitation air plate that can be easily manufactured and can float a substance being conveyed such as a glass while maintaining its high rigidity and controlling a floating amount in high accuracy. A levitation air plate | 11-26-2015 |
Takayasu Yasuda, Kanagawa JP
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20090130344 | COMPOSITION, FILM AND LIQUID CRYSTAL DISPLAY - A novel composition is disclosed. The composition comprises, at least, a polymer material and inorganic fine particles having adsorbed thereto molecules having at least one adsorptive group to the inorganic fine particle and a group capable of forming a liquid crystal core. A film made of the composition is also disclosed. | 05-21-2009 |
20120180697 | CELLULOSE ACYLATE FILM, RETARDATION FILM, POLARIZER AND LIQUID-CRYSTAL DISPLAY DEVICE - Provide is a cellulose acylate film, of which the environmental humidity-dependent retardation change is small and which, when stuck to a polarizer and used in high-temperature and high-humidity environments, is effective for preventing the polarizing element from being deteriorated. A cellulose acylate film, which contains a hydrogen-bonding compound satisfying the following requirements (A) to (C), and at least one hydrophobizing agent selected from a polyalcohol ester-base hydrophobizing agent, a polycondensate ester-base hydrophobizing agent and a carbohydrate derivative-base hydrophobizing agent: (A) the compound has both a hydrogen-bonding donor part and a hydrogen-bonding acceptor part in one molecule, (B) the value computed by dividing the molecular weight of the compound by the total number of the hydrogen-bonding donor number and the hydrogen-bonding acceptor number in the compound is from 30 to 65, and (C) the total number of the aromatic ring structures in the compound is from 1 to 3. | 07-19-2012 |
20140318413 | CELLULOSE ACYLATE FILM, RETARDATION FILM, POLARIZER AND LIQUID-CRYSTAL DISPLAY DEVICE - Provide is a cellulose acylate film, of which the environmental humidity-dependent retardation change is small and which, when stuck to a polarizer and used in high-temperature and high-humidity environments, is effective for preventing the polarizing element from being deteriorated. A cellulose acylate film, which contains a hydrogen-bonding compound satisfying the following requirements (A) to (C), and at least one hydrophobizing agent selected from a polyalcohol ester-base hydrophobizing agent, a polycondensate ester-base hydrophobizing agent and a carbohydrate derivative-base hydrophobizing agent: (A) the compound has both a hydrogen-bonding donor part and a hydrogen-bonding acceptor part in one molecule, (B) the value computed by dividing the molecular weight of the compound by the total number of the hydrogen-bonding donor number and the hydrogen-bonding acceptor number in the compound is from 30 to 65, and (C) the total number of the aromatic ring structures in the compound is from 1 to 3. | 10-30-2014 |
Takehiko Yasuda, Kanagawa JP
Takeshi Yasuda, Kanagawa JP
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20110052229 | IMAGE FORMING APPARATUS - An image forming apparatus includes an image carrier and a detection unit. The image carrier is stretched around a plurality of rolls. The detection unit detects a density of a toner image formed on the image carrier, based on an amount of regularly reflected light from a surface of the image carrier. A detection length where the detection unit performs the detection in a movement direction of the image carrier is longer than a length, in the movement direction of the image carrier, of a deformation area where a deformation of the image carrier is caused. | 03-03-2011 |
Tetsutaro Yasuda, Kanagawa JP
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20140312557 | SHEET FEEDER AND IMAGE FORMING APPARATUS INCORPORATING SAME - A sheet feeder, which is incorporated in an image forming apparatus, includes an endless attraction belt that is rotatably disposed facing a top surface of a sheet stack, a belt charger to attract an uppermost sheet of the sheet stack, and a sheet separator to press the attraction belt against the sheet stack, bend a contact region to which the uppermost sheet is attracted and contacted to the attraction belt, and separate the uppermost sheet from a subsequent sheet or other sheet of the sheet stack. In this configuration, a curvature of a contact surface of the sheet separator with respect to the attraction belt is changeable. | 10-23-2014 |
Toshihiro Yasuda, Kanagawa JP
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20120144641 | JET PUMP MEASUREMENT PIPE REPAIR METHOD - In a jet pump measurement pipe repair method according to the present embodiment, a breakage part of a measurement pipe horizontally fixed to a lower part of a jet pump provided in reactor water in a reactor pressure vessel is repaired. The method has: a step of cutting and removing the measurement pipe including the breakage part; a step of retaining a connection pipe for connecting the remaining measurement pipe on the jet pump by means of a clamp; and a step of connecting ends of the remaining measurement pipe by means of the connection pipe. | 06-14-2012 |
Toshikazu Yasuda, Kanagawa JP
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20130280617 | GEL ELECTRODE SECONDARY CELL - A gel electrolyte secondary cell in which discharge capacity loss can be suppressed even with the use of a graphitized carbonaceous material of a small particle size as a negative electrode material to assure low impedance, superior cell voltage and load characteristics and high charging/discharging efficiency. To this end, a graphitized carbonaceous material prepared by firing meso-carbon micro-beads is used as a material for a negative electrode. | 10-24-2013 |
20140162134 | GEL ELECTRODE SECONDARY CELL - A gel electrolyte secondary cell includes a positive electrode, a negative electrode and a gel electrolyte. The negative electrode includes a current collector, and a mixture of powders of a graphite carbonaceous material and a binder. The powders of the graphite carbonaceous material include sintered meso-carbon micro-beads. The gel electrolyte includes an electrolyte salt, a non-aqueous solvent and a high-molecular weight material. The non-aqueous solvent includes propylene carbonate and ethylene carbonate. A content of propylene carbonate ranges from 35 mol % to 75 mol %. The binder is in an amount 1 to 20 wt % based on total weight of the powders of the graphite carbonaceous material. The meso-carbon micro-beads can suitably decrease the impedance and the discharge capacity loss, thereby increasing the discharging capacity and/or charging/discharging efficiency of the gel electrolyte secondary cell. | 06-12-2014 |
Tsukasa Yasuda, Kanagawa JP
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20110057922 | DRIVE DEVICE AND DISPLAY DEVICE - A drive device according to the present invention includes a plurality of output amplifier circuits that are connected in parallel, a bias wire that supplies a bias voltage from a bias voltage supply source to the plurality of output amplifier circuits, a power supply wire that supplies a power supply voltage from a power supply voltage supply source to the plurality of output amplifier circuits, and a correction unit that superposes an offset voltage on the bias voltage so that a voltage difference between the power supply voltage and the bias voltage supplied to the plurality of output amplifier circuits is to be desirable. | 03-10-2011 |
20110204497 | Semiconductor integrated circuit and method for manufacturing the same - A semiconductor integrated circuit having a semiconductor chip mounted over a tape- or film-like substrate, the semiconductor integrated circuit having a higher strength against bending, as well as a method for manufacturing the semiconductor integrated circuit, are disclosed. The semiconductor integrated circuit comprises a bendable tape-like substrate, the tape-like substrate including external terminals, internal terminals provided for coupling to a rectangular semiconductor chip, and wiring lines for coupling the internal terminals and the external terminals with each other; and a reinforcing member for reinforcing the semiconductor chip over the tape-like substrate in a longitudinal direction of the semiconductor chip, the semiconductor chip and the reinforcing member being sealed with resin. | 08-25-2011 |
Yasunori Yasuda, Kanagawa JP
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20090064145 | Computer System and Method for Activating Basic Program Therein - A computer system capable of executing a basic program for providing a program execution environment. The system has a storage device for storing data that is necessary to the basic program during startup, and, for each basic program, configuration data that indicates information relating to data necessary during startup. In the computer system, data relating to the basic program that is to be started is read from the storage device setting, data necessary during startup is acquired from the storage device on the basis of information written in the configuration data, the data necessary during startup is stored in memory space that is in the memory device and that can be accessed from the basic program that is to be started, and a process for starting the designated basic program is executed. | 03-05-2009 |
20130311765 | INFORMATION PROCESSING APPARATUS, DATA GENERATION METHOD, INFORMATION PROCESSING METHOD, AND INFORMATION PROCESSING SYSTEM - A differencing generator generates difference data between a first data set and a second data set. An encryption unit encrypts data. An electronic signature generator generates the electronic signature of data. A transmission data generator generates transmission data. The encryption unit encrypts the difference data generated by the differencing generator so as to generate encrypted difference data. The transmission data generator generates transmission data containing both the encrypted difference data generated by the encryption unit and the electronic signature of the second data set as generated by the electronic signature generator. | 11-21-2013 |
Yoshiteru Yasuda, Kanagawa JP
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20100150482 | LOW-FRICTION SLIDE MEMBER, PRODUCTION APPARATUS THEREFOR AND PROCESS FOR PRODUCING THE SAME - According to one aspect of the present invention, there is provided a low-friction sliding member having a sliding surface slidable relative to an opposing member via an oil, wherein the sliding surface has a plurality of texture groups, each of the texture groups consists of at least two adjacent fine recesses having portions aligned to each other in either a sliding direction or oil flow direction; a distance between the texture groups is larger than a distance between the adjacent recesses; and the texture groups is distributed uniformly over the sliding surface. | 06-17-2010 |
Yoshiyuki Yasuda, Kanagawa JP
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20110261685 | RADIO COMMUNICATION SYSTEM AND UPPER NODE - A radio communication system provides a first call type in which a radio resource is allocated to a call in time division and a second call type in which the radio resource is allocated according to a transmission rate. The radio communication system includes a measurement unit measuring a usage result of the first call type and a usage result of the second call type; and a setting unit setting a first usage result priority level as a priority level of the first call type based on the usage result of the first call type upon receipt of the first call type and setting a second usage result priority level as a priority level of the second call type based on the usage result of the second call type upon receipt of the second call type. The first usage result priority level is applied independently of a congestion state of a radio communication section. The second usage result priority level is applied according to the congestion state of the radio communication section. | 10-27-2011 |
20120039306 | RADIO COMMUNICATION SYSTEM, RADIO BASE STATION, AND RADIO COMMUNICATION METHOD - A mobile communication system comprises: a data amount measurement unit ( | 02-16-2012 |
Yu Yasuda, Kanagawa JP
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20110048097 | METHOD OF MANUFACTURING OUTWARDLY FLANGED METAL MEMBER - There is provided a method of manufacturing an outwardly flanged metal member, by which a metal member having outward flange portions which extend radially outwardly from a plurality of positions along a circumferential direction on an outer peripheral surface can be formed without a flash, or with a reduced amount of a flash. While surrounding a periphery of a metal blank | 03-03-2011 |
Yusuke Yasuda, Kanagawa JP
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20150207445 | SEMICONDUCTOR DEVICE AND DRIVING APPARATUS - In a drive system using a single synchronous motor which is not paired with a synchronous generator, even if a failure occurs in an analog angle data converter for detecting the rotation angle of the synchronous motor, the driving of the synchronous motor can be continued in a temporal emergency manner. In addition to an analog angle data converter for converting an analog sense signal which is output from a rotation angle sensor of a synchronous motor to digital angle data, a digital angle data converter for converting digital data generated by an analog-to-digital converter to digital angle data is provided. In the case where the analog angle data converter fails, digital rotation angle data used for control of the drive circuit which generates a motor drive control signal for the synchronous motor is switched from data generated by the analog angle data converter to data generated by converting conversion result data of the analog sense signal by the analog-to-digital converter, by the digital angle data converter. | 07-23-2015 |
Yuu Yasuda, Kanagawa JP
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20090263065 | BEARING UNIT RACEWAY RING MEMBER, BEARING UNIT, AND METHOD AND APPARATUS FOR MANUFACTURING BEARING UNIT RACEWAY RING MEMBER - There is provided a bearing unit including one raceway ring | 10-22-2009 |
20100011582 | Process for Manufacturing a Bearing Ring Member as a Constituent of a Rolling Bearing Unit for Wheel Support - This invention provided a manufacturing method to process a small-diameter step section | 01-21-2010 |
20100058591 | METHOD FOR MANUFACTURING A BEARING RING MEMBER - The present invention provides a manufacturing method of a bearing ring member such as an outer ring comprising an installation portion on the outer peripheral surface and a double row of outer-ring raceways on the inner peripheral surface, in which a raw material is processed to obtain a final stage intermediate member through a first upsetting process, a forward-backward extrusion process, a second upsetting process, a burr removing process, and a punching process, wherein a movable die which leaves a stationary die in the final step is used in the second upsetting process, and the excess metal material is moved toward outside in the radial direction to a portion which become the installation section and a burr formation section, exposing a high pure metal material at least in a portion where the load of rolling bodies acts so as to ensure the rolling fatigue life of the both of outer-ring raceways. | 03-11-2010 |