Patent application number | Description | Published |
20090146681 | METHOD AND APPARATUS FOR ESTIMATING RESISTANCE AND CAPACITANCE OF METAL INTERCONNECTS - Techniques for estimating resistance and capacitance of metal interconnects are described. An apparatus may include an interconnect, a set of pads, a set of isolation circuits, and a test circuit. The set of pads may be coupled to the interconnect and used for simultaneously applying a current through the interconnect and measuring a voltage across the interconnect. The current and voltage may be used to estimate the resistance of the interconnect. The test circuit may charge and discharge the interconnect to estimate the capacitance of the interconnect. The isolation circuits may isolate the pads from the interconnect when the test circuit charges and discharges the interconnect. The apparatus may further include another interconnect, another set of pads, and another set of isolation circuits that may be coupled in a mirror manner. Resistance and/or capacitance mismatch between the two interconnects may be accurately estimated. | 06-11-2009 |
20120211812 | HIGH-SPEED HIGH-POWER SEMICONDUCTOR DEVICES - High-speed high-power semiconductor devices are disclosed. In an exemplary design, a high-speed high-power semiconductor device includes a source, a drain to provide an output signal, and an active gate to receive an input signal. The semiconductor device further includes at least one field gate located between the active gate and the drain, at least one shallow trench isolation (STI) strip formed transverse to the at least one field gate, and at least one drain active strip formed parallel to, and alternating with, the at least one STI strip. The semiconductor device may be modeled by a combination of an active FET and a MOS varactor. The active gate controls the active FET, and the at least one field gate controls the MOS varactor. The semiconductor device has a low on resistance and can handle a high voltage. | 08-23-2012 |
20140131885 | HARD MACRO HAVING BLOCKAGE SITES, INTEGRATED CIRCUIT INCLUDING SAME AND METHOD OF ROUTING THROUGH A HARD MACRO - A hard macro includes a periphery defining a hard macro area and having a top and a bottom and a hard macro thickness from the top to the bottom, the hard macro including a plurality of vias extending through the hard macro thickness from the top to bottom. Also an integrated circuit having a top layer, a bottom layer and at least one middle layer, the top layer including a top layer conductive trace, the middle layer including a hard macro and the bottom layer including a bottom layer conductive trace, wherein the top layer conductive trace is connected to the bottom layer conductive trace by a via extending through the hard macro. | 05-15-2014 |
20140145347 | CLOCK DISTRIBUTION NETWORK FOR 3D INTEGRATED CIRCUIT - Exemplary embodiments of the invention are directed to systems and method for designing a clock distribution network for an integrated circuit. The embodiments identify critical sources of clock skew, tightly control the timing of the clock and build that timing into the overall clock distribution network and integrated circuit design. The disclosed embodiments separate the clock distribution network (CDN), i.e., clock generation circuitry, wiring, buffering and registers, from the rest of the logic to improve the clock tree design and reduce the area footprint. In one embodiment, the CDN is separated to a separate tier of a 3D integrated circuit, and the CDN is connected to the logic tier(s) via high-density inter-tier vias. The embodiments are particularly advantageous for implementation with monolithic 3D integrated circuits. | 05-29-2014 |
20140146630 | DATA TRANSFER ACROSS POWER DOMAINS - The disclosed embodiments comprise a multi-stage circuit operating across different power domains. The multi-stage circuit may be implemented as a master-slave flip-flop circuit integrated with a level shifter that transfers data across different power domains. The master and slave stages of the flip-flop may be split across two tiers of a 3D IC and may include (i) a level shifter across different power domain integrated within the flip-flop circuit, (ii) reduced one-state writing delays by a self-induced power collapsing technique, (iii) splitting flip-flop power supplies in different tiers using monolithic 3D IC technology, and (iv) cross power domain data transfer between 3D IC tiers. | 05-29-2014 |
20140149958 | 3D FLOORPLANNING USING 2D AND 3D BLOCKS - The disclosed embodiments are directed to systems and method for floorplanning an integrated circuit design using a mix of 2D and 3D blocks that provide a significant improvement over existing 3D design methodologies. The disclosed embodiments provide better floorplan solutions that further minimize wirelength and improve the overall power/performance envelope of the designs. The disclosed methodology may be used to construct new 3D IP blocks to be used in designs that are built using monolithic 3D integration technology. | 05-29-2014 |
20140252306 | MONOLITHIC THREE DIMENSIONAL INTEGRATION OF SEMICONDUCTOR INTEGRATED CIRCUITS - A three-dimensional integrated circuit comprising top tier nanowire transistors formed on a bottom tier of CMOS transistors, with inter-tier vias, intra-tier vias, and metal layers to connect together the various CMOS transistors and nanowire transistors. The top tier first begins as lightly doped regions on a first wafer, with an oxide layer formed over the regions. Hydrogen ion implantation forms a cleavage interface. The first wafer is flipped and oxide bonded to a second wafer having CMOS devices, and the cleavage interface is thermally activated so that a portion of the lightly doped regions remains bonded to the bottom tier. Nanowire transistors are formed in the top tier layer. The sources and drains for the top tier nanowire transistors are formed by in-situ doping during epitaxial growth. After oxide bonding, the remaining process steps are performed at low temperatures so as not to damage the metal interconnects. | 09-11-2014 |
20140253196 | FLIP-FLOPS IN A MONOLITHIC THREE-DIMENSIONAL (3D) INTEGRATED CIRCUIT (IC) (3DIC) AND RELATED METHODS - Flip-flops in a monolithic three-dimensional (3D) integrated circuit (IC)(3DIC) and related method are disclosed. In one embodiment, a single clock source is provided for the 3DIC and distributed to elements within the 3DIC. Delay is provided to clock paths by selectively controllable flip-flops to help provide synchronous operation. In certain embodiments, 3D flip-flop are provided that include a master latch disposed in a first tier of a 3DIC. The master latch is configured to receive a flip-flop input and a clock input, the master latch configured to provide a master latch output. The 3D flip-flop also includes at least one slave latch disposed in at least one additional tier of the 3DIC, the at least one slave latch configured to provide a 3DIC flip-flop output. The 3D flip-flop also includes at least one monolithic intertier via (MIV) coupling the master latch output to an input of the slave latch. | 09-11-2014 |
20140269022 | THREE-DIMENSIONAL (3D) MEMORY CELL SEPARATION AMONG 3D INTEGRATED CIRCUIT (IC) TIERS, AND RELATED 3D INTEGRATED CIRCUITS (3DICS), 3DIC PROCESSOR CORES, AND METHODS - A three-dimensional (3D) memory cell separation among 3D integrated circuit (IC) (3DIC) tiers is disclosed. Related 3DICs, 3DIC processor cores, and methods are also disclosed. In embodiments disclosed herein, memory read access ports of a memory block are separated from a memory cell in different tiers of a 3DIC. 3DICs achieve higher device packing density, lower interconnect delays, and lower costs. In this manner, different supply voltages can be provided for the read access ports and the memory cell to be able to lower supply voltage for the read access ports. Static noise margins and read/write noise margins in the memory cell may be provided as a result. Providing multiple power supply rails inside a non-separated memory block that increases area can also be avoided. | 09-18-2014 |
20150019802 | MONOLITHIC THREE DIMENSIONAL (3D) RANDOM ACCESS MEMORY (RAM) ARRAY ARCHITECTURE WITH BITCELL AND LOGIC PARTITIONING - A monolithic three dimensional (3D) memory cell array architecture with bitcell and logic partitioning is disclosed. A 3D integrated circuit (IC) (3DIC) is proposed which folds or otherwise stacks elements of the memory cells into different tiers within the 3DIC. Each tier of the 3DIC has memory cells as well as access logic including global block control logic therein. By positioning the access logic and global block control logic in each tier with the memory cells, the length of the bit and word lines for each memory call are shortened, allowing for reduced supply voltages as well as generally reducing the overall footprint of the memory device. | 01-15-2015 |
20150022250 | MONOLITHIC THREE DIMENSIONAL (3D) FLIP-FLOPS WITH MINIMAL CLOCK SKEW AND RELATED SYSTEMS AND METHODS - Monolithic three dimensional (3D) flip-flops with minimal clock skew and related systems and methods are disclosed. The present disclosure provides a 3D integrated circuit (IC) (3DIC) that has a flop spread across at least two tiers of the 3DIC. The flop is split across tiers with transistor partitioning in such a way that keeps all the clock related devices at the same tier, thus potentially giving better setup, hold and clock-to-q margin. In particular, a first tier of the 3DIC has the master latch, slave latch, and clock circuit. A second tier has the input circuit and the output circuit. | 01-22-2015 |
20150022262 | COMPLETE SYSTEM-ON-CHIP (SOC) USING MONOLITHIC THREE DIMENSIONAL (3D) INTEGRATED CIRCUIT (IC) (3DIC) TECHNOLOGY - Embodiments disclosed in the detailed description include a complete system-on-chip (SOC) solution using monolithic three dimensional (3D) integrated circuit (IC) (3DIC) integration technology. The present disclosure includes example of the ability to customize layers within a monolithic 3DIC and the accompanying short interconnections possible between tiers through monolithic intertier vias (MIV) to create a system on a chip. In particular, different tiers of the 3DIC are constructed to support different functionality and comply with differing design criteria. Thus, the 3DIC can have an analog layer, layers with higher voltage threshold, layers with lower leakage current, layers of different material to implement components that need different base materials and the like. Unlike the stacked dies, the upper layers may be the same size as the lower layers because no external wiring connections are required. | 01-22-2015 |