Patent application number | Description | Published |
20090255555 | Advanced cleaning process using integrated momentum transfer and controlled cavitation - A method and apparatus for cleaning a workpiece are disclosed. A gas and cleaning solution are supplied to an atomizing nozzle which atomizes the cleaning solution and sprays the top surface of a workpiece with an atomized spray. A liquid having a controlled gas content is flowed to the top surface of the workpiece from a rinse nozzle. Megasonic energy is applied from the backside of the workpiece. | 10-15-2009 |
20110312157 | WAFER DICING USING FEMTOSECOND-BASED LASER AND PLASMA ETCH - Methods of dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. A method includes forming a mask above the semiconductor wafer. The mask is composed of a layer covering and protecting the integrated circuits. The mask is patterned with a femtosecond-based laser scribing process to provide a patterned mask with gaps. The patterning exposes regions of the semiconductor wafer between the integrated circuits. The semiconductor wafer is then etched through the gaps in the patterned mask to singulate the integrated circuits. | 12-22-2011 |
20120322233 | WATER SOLUBLE MASK FOR SUBSTRATE DICING BY LASER AND PLASMA ETCH - Methods of dicing substrates having a plurality of ICs. A method includes forming a mask comprising a water soluble material layer over the semiconductor substrate. The mask is patterned with a femtosecond laser scribing process to provide a patterned mask with gaps. The patterning exposes regions of the substrate between the ICs. The substrate is then etched through the gaps in the patterned mask to singulate the IC and the water soluble material layer washed off. | 12-20-2012 |
20120322234 | IN-SITU DEPOSITED MASK LAYER FOR DEVICE SINGULATION BY LASER SCRIBING AND PLASMA ETCH - Methods of dicing substrates by both laser scribing and plasma etching. A method includes forming an in-situ mask with a plasma etch chamber by accumulating a thickness of plasma deposited polymer to protect IC bump surfaces from a subsequent plasma etch. Second mask materials, such as a water soluble mask material may be utilized along with the plasma deposited polymer. At least some portion of the mask is patterned with a femtosecond laser scribing process to provide a patterned mask with trenches. The patterning exposing regions of the substrate between the ICs in which the substrate is plasma etched to singulate the IC and the water soluble material layer washed off. | 12-20-2012 |
20120322235 | WAFER DICING USING HYBRID GALVANIC LASER SCRIBING PROCESS WITH PLASMA ETCH - Methods of dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. A method includes forming a mask above the semiconductor wafer. The mask is composed of a layer covering and protecting the integrated circuits. The mask is patterned with a galvanic laser scribing process to provide a patterned mask with gaps. The patterning exposes regions of the semiconductor wafer between the integrated circuits. The semiconductor wafer is then etched through the gaps in the patterned mask to singulate the integrated circuits. | 12-20-2012 |
20120322236 | WAFER DICING USING PULSE TRAIN LASER WITH MULTIPLE-PULSE BURSTS AND PLASMA ETCH - Methods of dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. A method includes forming a mask above the semiconductor wafer. The mask is composed of a layer covering and protecting the integrated circuits. The mask is patterned with a pulse train laser scribing process using multiple-pulse bursts to provide a patterned mask with gaps. The patterning exposes regions of the semiconductor wafer between the integrated circuits. The semiconductor wafer is then etched through the gaps in the patterned mask to singulate the integrated circuits. | 12-20-2012 |
20120322237 | LASER AND PLASMA ETCH WAFER DICING USING PHYSICALLY-REMOVABLE MASK - Methods of dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. A method includes forming a mask above the semiconductor wafer. The mask covers and protects the integrated circuits. The mask is patterned with a laser scribing process to provide a patterned mask with gaps. The patterning exposes regions of the semiconductor wafer between the integrated circuits. The semiconductor wafer is then etched through the gaps in the patterned mask to form singulated integrated circuits. The patterned mask is then separated from the singulated integrated circuits. | 12-20-2012 |
20120322238 | LASER AND PLASMA ETCH WAFER DICING USING WATER-SOLUBLE DIE ATTACH FILM - Methods of dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. A method includes forming a mask above the semiconductor wafer. The semiconductor wafer is disposed on a water-soluble die attach film. The mask covers and protects the integrated circuits. The mask is patterned with a laser scribing process to provide a patterned mask with gaps. The patterning exposes regions of the semiconductor wafer between the integrated circuits. The semiconductor wafer is then etched through the gaps in the patterned mask to form singulated integrated circuits. The water-soluble die attach film is then patterned with an aqueous solution. | 12-20-2012 |
20120322239 | HYBRID LASER AND PLASMA ETCH WAFER DICING USING SUBSTRATE CARRIER - Methods of dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. A method includes forming a mask above the semiconductor wafer, the mask composed of a layer covering and protecting the integrated circuits. The semiconductor wafer is supported by a substrate carrier. The mask is then patterned with a laser scribing process to provide a patterned mask with gaps, exposing regions of the semiconductor wafer between the integrated circuits. The semiconductor wafer is then etched through the gaps in the patterned mask to singulate the integrated circuits while supported by the substrate carrier. | 12-20-2012 |
20120322242 | MULTI-STEP AND ASYMMETRICALLY SHAPED LASER BEAM SCRIBING - Methods of dicing substrates by both laser scribing and plasma etching. A method includes laser ablating material layers, the ablating leading with a first irradiance and following with a second irradiance, lower than the first. Multiple passes of a beam adjusted to have different fluence level or multiple laser beams having various fluence levels may be utilized to ablate mask and IC layers to expose a substrate with the first fluence level and then clean off redeposited materials from the trench bottom with the second fluence level. A laser scribe apparatus employing a beam splitter may provide first and second beams of different fluence from a single laser. | 12-20-2012 |
20130005152 | INCREASED DEPOSITION EFFICIENCY AND HIGHER CHAMBER CONDUCTANCE WITH SOURCE POWER INCREASE IN AN INDUCTIVELY COUPLED PLASMA (ICP) CHAMBER - Embodiments described herein generally relate to a substrate processing system and related methods, such as an etching/deposition method. The method comprises (A) depositing a protective layer on a first layer disposed on a substrate in an etch reactor, wherein a plasma source power of 4,500 Watts or greater is applied while depositing the protective layer, (B) etching the protective layer in the etch reactor, wherein the plasma source power of 4,500 Watts or greater is applied while etching the protective layer, and (C) etching the first layer in the etch reactor, wherein the plasma source power of 4,500 Watts or greater is applied while etching the first layer, wherein a time for the depositing a protective layer (A) comprises less than 30% of a total cycle time for the depositing a protective layer (A), the etching the protective layer (B), and the etching the first layer (C). | 01-03-2013 |
20130017668 | WAFER DICING USING HYBRID SPLIT-BEAM LASER SCRIBING PROCESS WITH PLASMA ETCHAANM Lei; Wei-ShengAACI San JoseAAST CAAACO USAAGP Lei; Wei-Sheng San Jose CA USAANM Eaton; BradAACI Menlo ParkAAST CAAACO USAAGP Eaton; Brad Menlo Park CA USAANM Yalamanchili; Madhava RaoAACI Morgan HillAAST CAAACO USAAGP Yalamanchili; Madhava Rao Morgan Hill CA USAANM Singh; SaravjeetAACI Santa ClaraAAST CAAACO USAAGP Singh; Saravjeet Santa Clara CA USAANM Kumar; AjayAACI CupertinoAAST CAAACO USAAGP Kumar; Ajay Cupertino CA USAANM Iyer; AparnaAACI SunnyvaleAAST CAAACO USAAGP Iyer; Aparna Sunnyvale CA US - Methods of dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. A method includes forming a mask above the semiconductor wafer. The mask is composed of a layer covering and protecting the integrated circuits. The mask is patterned with a split-beam laser scribing process to provide a patterned mask with gaps. The patterning exposes regions of the semiconductor wafer between the integrated circuits. The semiconductor wafer is then etched through the gaps in the patterned mask to singulate the integrated circuits. | 01-17-2013 |
20130267076 | WAFER DICING USING HYBRID MULTI-STEP LASER SCRIBING PROCESS WITH PLASMA ETCH - Methods of dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. A method includes forming a mask above the semiconductor wafer. The mask is composed of a layer covering and protecting the integrated circuits. The mask is patterned with a multi-step laser scribing process to provide a patterned mask with gaps. The patterning exposes regions of the semiconductor wafer between the integrated circuits. The semiconductor wafer is then etched through the gaps in the patterned mask to singulate the integrated circuits. | 10-10-2013 |
20130280890 | LASER AND PLASMA ETCH WAFER DICING USING UV-CURABLE ADHESIVE FILM - Laser and plasma etch wafer dicing using UV-curable adhesive films is described. In an example, a method includes forming a mask above the semiconductor wafer. The semiconductor wafer is coupled to a carrier substrate by a UV-curable adhesive film. The mask covers and protects the integrated circuits. The mask is patterned with a laser scribing process to provide a patterned mask with gaps. The patterning exposes regions of the semiconductor wafer between the integrated circuits. The semiconductor wafer is then etched through the gaps in the patterned mask to form singulated integrated circuits. The UV-curable adhesive film is then irradiated with ultra-violet (UV) light. The singulated integrated circuits are then detached from the carrier substrate. | 10-24-2013 |
20130288474 | METHODS FOR FABRICATING DUAL DAMASCENE INTERCONNECT STRUCTURES - Methods for fabricating dual damascene interconnect structures are provided herein. In some embodiments, a method for fabricating a dual damascene interconnect structure may include etching a via into a substrate through a first photoresist layer; patterning a second photoresist layer atop the substrate to define a trench pattern, wherein the via is aligned within the trench pattern, and wherein a portion of undeveloped photoresist remains in the via after patterning; and etching the trench into the substrate to form a dual damascene pattern in the substrate. | 10-31-2013 |
20130299088 | LASER AND PLASMA ETCH WAFER DICING USING WATER-SOLUBLE DIE ATTACH FILM - Methods of dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. A method includes forming a mask above the semiconductor wafer. The semiconductor wafer is disposed on a water-soluble die attach film. The mask covers and protects the integrated circuits. The mask is patterned with a laser scribing process to provide a patterned mask with gaps. The patterning exposes regions of the semiconductor wafer between the integrated circuits. The semiconductor wafer is then etched through the gaps in the patterned mask to form singulated integrated circuits. The water-soluble die attach film is then patterned with an aqueous solution. | 11-14-2013 |
20140004685 | LASER AND PLASMA ETCH WAFER DICING WITH A DOUBLE SIDED UV-CURABLE ADHESIVE FILM | 01-02-2014 |
20140017879 | UNIFORM MASKING FOR WAFER DICING USING LASER AND PLASMA ETCH - Uniform masking for wafer dicing using laser and plasma etch is described. In an example, a method of dicing a semiconductor wafer having a plurality of integrated circuits having bumps or pillars includes uniformly spinning on a mask above the semiconductor wafer, the mask composed of a layer covering and protecting the integrated circuits. The mask is then patterned with a laser scribing process to provide a patterned mask with gaps, exposing regions of the semiconductor wafer between the integrated circuits. The semiconductor wafer is then etched through the gaps in the patterned mask to singulate the integrated circuits. | 01-16-2014 |
20140017880 | LASER, PLASMA ETCH, AND BACKSIDE GRIND PROCESS FOR WAFER DICING - Front side laser scribing and plasma etch are performed followed by back side grind to singulate integrated circuit chips (ICs). A mask is formed covering ICs formed on the wafer, as well as any bumps providing an interface to the ICs. The mask is patterned by laser scribing to provide a patterned mask with gaps. The patterning exposes regions of the semiconductor wafer, below thin film layers from which the ICs are formed. The semiconductor wafer is then etched through the gaps in the patterned mask to advance a front of an etched trench partially through the semiconductor wafer thickness. The front side mask is removed, a backside grind tape applied to the front side, and a back side grind performed to reach the etched trench, thereby singulating the ICs. | 01-16-2014 |
20140017881 | LASER SCRIBING AND PLASMA ETCH FOR HIGH DIE BREAK STRENGTH AND CLEAN SIDEWALL - In embodiments, a hybrid wafer or substrate dicing process involving an initial laser scribe and subsequent plasma etch is implemented for die singulation. The laser scribe process may be used to cleanly remove a mask layer, organic and inorganic dielectric layers, and device layers. The laser etch process may then be terminated upon exposure of, or partial etch of, the wafer or substrate. In embodiments, a multi-plasma etching approach is employed to dice the wafers where an isotropic etch is employed to improve the die sidewall following an anisotropic etch. The isotropic etch removes anisotropic etch byproducts, roughness, and/or scalloping from the anisotropically etched die sidewalls after die singulation. | 01-16-2014 |
20140017882 | METHOD OF COATING WATER SOLUBLE MASK FOR LASER SCRIBING AND PLASMA ETCH - Methods of using a hybrid mask composed of a first water soluble film layer and a second water-soluble layer for wafer dicing using laser scribing and plasma etch described. In an example, a method of dicing a semiconductor wafer having a plurality of integrated circuits involves forming a hybrid mask above the semiconductor wafer. The hybrid mask is composed of a first water-soluble layer disposed on the integrated circuits, and a second water-soluble layer disposed on the first water-soluble layer. The method also involves patterning the hybrid mask with a laser scribing process to provide a patterned hybrid mask with gaps, exposing regions of the semiconductor wafer between the integrated circuits. The method also involves etching the semiconductor wafer through the gaps in the patterned hybrid mask to singulate the integrated circuits. | 01-16-2014 |
20140065797 | IN-SITU DEPOSITED MASK LAYER FOR DEVICE SINGULATION BY LASER SCRIBING AND PLASMA ETCH - Methods of dicing substrates by both laser scribing and plasma etching. A method includes forming an in-situ mask with a plasma etch chamber by accumulating a thickness of plasma deposited polymer to protect IC bump surfaces from a subsequent plasma etch. Second mask materials, such as a water soluble mask material may be utilized along with the plasma deposited polymer. At least some portion of the mask is patterned with a femtosecond laser scribing process to provide a patterned mask with trenches. The patterning exposing regions of the substrate between the ICs in which the substrate is plasma etched to singulate the IC and the water soluble material layer washed off. | 03-06-2014 |
20140106542 | LASER AND PLASMA ETCH WAFER DICING WITH PARTIAL PRE-CURING OF UV RELEASE DICING TAPE FOR FILM FRAME WAFER APPLICATION - Methods and systems of laser and plasma etch wafer dicing using UV-curable adhesive films. A method includes forming a mask covering ICs formed on the wafer. The semiconductor wafer is coupled to a film frame by a UV-curable adhesive film. A pre-cure of the UV-curable adhesive film cures a peripheral portion of the adhesive extending beyond an edge of the wafer to improve the exposed adhesive material's resistance to plasma etch and reduce hydrocarbon redeposition within the etch chamber. The mask is patterned by laser scribing to provide a patterned mask with gaps. The patterning exposes regions of the semiconductor wafer, below thin film layers from which the ICs are formed. The semiconductor wafer is plasma etched through the gaps in the patterned mask to singulate the ICs. A center portion of the UV-curable adhesive is then cured and the singulated ICs detached from the film. | 04-17-2014 |
20140120697 | WAFER DICING USING FEMTOSECOND-BASED LASER AND PLASMA ETCH - Methods of dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. A method includes forming a mask above the semiconductor wafer, the mask including a layer covering and protecting the integrated circuits. The mask and a portion of the semiconductor wafer are patterned with a laser scribing process to provide a patterned mask and to form trenches partially into but not through the semiconductor wafer between the integrated circuits. Each of the trenches has a width. The semiconductor wafer is plasma etched through the trenches to form corresponding trench extensions and to singulate the integrated circuits. Each of the corresponding trench extensions has the width. | 05-01-2014 |
20140120698 | WAFER DICING USING HYBRID MULTI-STEP LASER SCRIBING PROCESS WITH PLASMA ETCH - Methods of dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. A method includes forming a mask above the semiconductor wafer. The mask is composed of a layer covering and protecting the integrated circuits. The mask is patterned with a multi-step laser scribing process to provide a patterned mask with gaps. The patterning exposes regions of the semiconductor wafer between the integrated circuits. The semiconductor wafer is then etched through the gaps in the patterned mask to singulate the integrated circuits. | 05-01-2014 |
20140144585 | HYBRID LASER AND PLASMA ETCH WAFER DICING USING SUBSTRATE CARRIER - Methods of and apparatuses for dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. A method includes forming a mask above the semiconductor wafer, the mask composed of a layer covering and protecting the integrated circuits. The semiconductor wafer is supported by a substrate carrier. The mask is then patterned with a laser scribing process to provide a patterned mask with gaps, exposing regions of the semiconductor wafer between the integrated circuits. The semiconductor wafer is then etched through the gaps in the patterned mask to singulate the integrated circuits while supported by the substrate carrier. | 05-29-2014 |
20140174659 | WATER SOLUBLE MASK FOR SUBSTRATE DICING BY LASER AND PLASMA ETCH - Methods of dicing substrates having a plurality of ICs are disclosed. A method includes forming a mask comprising a water soluble material layer over the semiconductor substrate. The mask is patterned with a femtosecond laser scribing process to provide a patterned mask with gaps. The patterning exposes regions of the substrate between the ICs. The substrate is then etched through the gaps in the patterned mask to singulate the IC and the water soluble material layer is washed off. | 06-26-2014 |
20140179084 | WAFER DICING FROM WAFER BACKSIDE - Methods of dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. For example, a method includes applying a protection tape to a wafer front side, the wafer having a dicing tape attached to the wafer backside. The dicing tape is removed from the wafer backside to expose a die attach film disposed between the wafer backside and the dicing tape. Alternatively, if no die attach film is initially disposed between the wafer backside and the dicing tape, a die attach film is applied to the wafer backside at this operation. A water soluble mask is applied to the wafer backside. Laser scribing is performed on the wafer backside to cut through the mask, the die attach film and the wafer, including all layers included within the front side and backside of the wafer. A plasma etch is performed to treat or clean surfaces of the wafer exposed by the laser scribing. A wafer backside cleaning is performed and a second dicing tape is applied to the wafer backside. The protection tape is the removed from the wafer front side. | 06-26-2014 |
20140179108 | Wafer Edge Protection and Efficiency Using Inert Gas and Ring - Embodiments of the invention generally relate to an apparatus and method for plasma etching. In one embodiment, the apparatus includes a process ring with an annular step away from an inner wall of the ring and is disposed on a substrate support in a plasma process chamber. A gap is formed between the process ring and a substrate placed on the substrate support. The annular step has an inside surface having a height ranging from about 3 mm to about 6 mm. During operation, an edge-exclusion gas is introduced to flow through the gap and along the inside surface, so the plasma is blocked from entering the space near the edge of the substrate. | 06-26-2014 |
20140199833 | METHODS FOR PERFORMING A VIA REVEAL ETCHING PROCESS FOR FORMING THROUGH-SILICON VIAS IN A SUBSTRATE - The present disclosure provides methods for via reveal etching process to form through-silicon vias (TSVs) in a substrate. In one embodiment, a method for performing a via reveal process to form through-silicon vias in a substrate includes providing a substrate having partial through-silicon vias formed from a first surface of the substrate into a processing chamber, wherein the partial through-silicon vias formed in the substrate are blind vias, supplying an etching gas mixture including at least a fluorine containing gas and a chlorine containing gas into the processing chamber, and preferentially removing a portion of the substrate from a second surface of the substrate to expose the through-silicon vias until a desired length of the through-silicon vias is exposed from the second surface of the substrate. | 07-17-2014 |
20140213042 | SUBSTRATE DICING BY LASER ABLATION & PLASMA ETCH DAMAGE REMOVAL FOR ULTRA-THIN WAFERS - Methods of dicing substrates having a plurality of ICs. A method includes forming a mask, patterning the mask with a femtosecond laser scribing process to provide a patterned mask with gaps, and ablating through an entire thickness of a semiconductor substrate to singulate the IC. Following laser-based singulation, a plasma etch is performed to remove a layer of semiconductor sidewall damaged by the laser scribe process. In the exemplary embodiment, a femtosecond laser is utilized and a 1-3 μm thick damage layer is removed with the plasma etch. Following the plasma etch, the mask is removed, rendering the singulated die suitable for assembly/packaging. | 07-31-2014 |
20140273401 | SUBSTRATE LASER DICING MASK INCLUDING LASER ENERGY ABSORBING WATER-SOLUBLE FILM - Methods of dicing substrates having a plurality of ICs. A method includes forming a mask comprising a laser energy absorbing material layer soluble in water over the semiconductor substrate. The laser energy absorbing material layer may be UV curable, and either remain uncured or be cured prior to removal with a water rinse. The mask is patterned with a laser scribing process to provide a patterned mask with gaps. The patterning exposes regions of the substrate between the ICs. The substrate may then be plasma etched through the gaps in the patterned mask to singulate the IC with the laser energy absorbing mask protecting the ICs for during the plasma etch. The soluble mask is then dissolved subsequent to singulation. | 09-18-2014 |
20140273460 | PASSIVE CONTROL FOR THROUGH SILICON VIA TILT IN ICP CHAMBER - Embodiments of the present disclosure generally provide apparatus and methods for improving process result near the edge region of a substrate being processed. One embodiment of the present disclosure provides a cover ring for improving process uniformity. The cover ring includes a ring shaped body, and an extended lip extending radially inwards from the ring shaped body. An inner edge of the extended lip forms a central opening to expose a processing region on a substrate being processed, and a width of the extended lip is between about 15% to about 20% of a radius of the central opening. | 09-18-2014 |
20140335679 | METHODS FOR ETCHING A SUBSTRATE - In some embodiments, a method for etching features into a substrate may include exposing a substrate having a photoresist layer disposed atop the substrate to a first process gas to form a polymer containing layer atop sidewalls and a bottom of a feature formed in the photoresist layer, wherein the first process gas is selectively provided to a first area of the substrate via a first set of gas nozzles disposed within a process chamber and; exposing the substrate to a second process gas having substantially no oxygen to etch the feature into the substrate, wherein the second process gas is selectively provided to a second area of the substrate via a second set of gas nozzles disposed in the process chamber. | 11-13-2014 |
20140346641 | WAFER DICING WITH WIDE KERF BY LASER SCRIBING AND PLASMA ETCHING HYBRID APPROACH - Methods of dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. In an example, approaches for wafer dicing with wide kerf by using a laser scribing and plasma etching hybrid approach are described. For example, a method of dicing a semiconductor wafer including a plurality of integrated circuits separated by dicing streets involves forming a mask above the semiconductor wafer, the mask having a layer covering and protecting the integrated circuits. The method also involves patterning the mask with a laser scribing process to provide a patterned mask having a pair of parallel gaps for each dicing street, exposing regions of the semiconductor wafer between the integrated circuits. Each gap of each pair of parallel gaps is separated by a distance. The method also involves etching the semiconductor wafer through the gaps in the patterned mask to singulate the integrated circuits. | 11-27-2014 |
20140363952 | LASER, PLASMA ETCH, AND BACKSIDE GRIND PROCESS FOR WAFER DICING - Front side laser scribing and plasma etch are performed followed by back side grind to singulate integrated circuit chips (ICs). A mask is formed covering ICs formed on the wafer, as well as any bumps providing an interface to the ICs. The mask is patterned by laser scribing to provide a patterned mask with gaps. The patterning exposes regions of the semiconductor wafer, below thin film layers from which the ICs are formed. The semiconductor wafer is then etched through the gaps in the patterned mask to advance a front of an etched trench partially through the semiconductor wafer thickness. The front side mask is removed, a backside grind tape applied to the front side, and a back side grind performed to reach the etched trench, thereby singulating the ICs. | 12-11-2014 |
20140367041 | WAFER DICING USING FEMTOSECOND-BASED LASER AND PLASMA ETCH - Methods of dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. A method includes forming a mask above the semiconductor wafer, the mask including a layer covering and protecting the integrated circuits. The mask and a portion of the semiconductor wafer are patterned with a laser scribing process to provide a patterned mask and to form trenches partially into but not through the semiconductor wafer between the integrated circuits. Each of the trenches has a width. The semiconductor wafer is plasma etched through the trenches to form corresponding trench extensions and to singulate the integrated circuits. Each of the corresponding trench extensions has the width. | 12-18-2014 |
20140377937 | METHOD OF COATING WATER SOLUBLE MASK FOR LASER SCRIBING AND PLASMA ETCH - Methods of using a hybrid mask composed of a first water soluble film layer and a second water-soluble layer for wafer dicing using laser scribing and plasma etch described. In an example, a method of dicing a semiconductor wafer having a plurality of integrated circuits involves forming a hybrid mask above the semiconductor wafer. The hybrid mask is composed of a first water-soluble layer disposed on the integrated circuits, and a second water-soluble layer disposed on the first water-soluble layer. The method also involves patterning the hybrid mask with a laser scribing process to provide a patterned hybrid mask with gaps, exposing regions of the semiconductor wafer between the integrated circuits. The method also involves etching the semiconductor wafer through the gaps in the patterned hybrid mask to singulate the integrated circuits. | 12-25-2014 |
20150011073 | LASER SCRIBING AND PLASMA ETCH FOR HIGH DIE BREAK STRENGTH AND SMOOTH SIDEWALL - In embodiments, a hybrid wafer or substrate dicing process involving an initial laser scribe and subsequent plasma etch is implemented for die singulation. The laser scribe process may be used to cleanly remove a mask layer, organic and inorganic dielectric layers, and device layers. The laser etch process may then be terminated upon exposure of, or partial etch of, the wafer or substrate. In embodiments, a hybrid plasma etching approach is employed to dice the wafers where an isotropic etch is employed to improve the die sidewall following an anisotropic etch with a plasma based on a combination of NF | 01-08-2015 |
20150028446 | WAFER DICING WITH WIDE KERF BY LASER SCRIBING AND PLASMA ETCHING HYBRID APPROACH - Methods of dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. In an example, approaches for wafer dicing with wide kerf by using a laser scribing and plasma etching hybrid approach are described. For example, a method of dicing a semiconductor wafer including a plurality of integrated circuits separated by dicing streets involves forming a mask above the semiconductor wafer, the mask having a layer covering and protecting the integrated circuits. The method also involves patterning the mask with a laser scribing process to provide a patterned mask having a pair of parallel gaps for each dicing street, exposing regions of the semiconductor wafer between the integrated circuits. Each gap of each pair of parallel gaps is separated by a distance. The method also involves etching the semiconductor wafer through the gaps in the patterned mask to singulate the integrated circuits. | 01-29-2015 |
20150037915 | METHOD AND SYSTEM FOR LASER FOCUS PLANE DETERMINATION IN A LASER SCRIBING PROCESS - In embodiments, a method of laser scribing a mask disposed over a semiconductor wafer includes determining a height of the semiconductor over which a mask layer is disposed prior to laser scribing the mask layer. In one embodiment the method includes: determining a height of the semiconductor wafer under the mask in a dicing street using an optical sensor and patterning the mask with a laser scribing process. The laser scribing process focuses a scribing laser beam at a plane corresponding to the determined height of the semiconductor wafer in the dicing street. Examples of determining the height of the semiconductor wafer can include directing a laser beam to the dicing street of the semiconductor wafer, which is transmitted through the mask and reflected from the wafer, and identifying an image on a surface of the wafer under the mask with a camera. | 02-05-2015 |
20150064878 | WAFER DICING METHOD FOR IMPROVING DIE PACKAGING QUALITY - In embodiments, a hybrid wafer or substrate dicing process involving an initial laser scribe and subsequent plasma etch is implemented for die singulation while also removing an oxidation layer from metal bumps on the wafer. In one embodiment, a method includes forming a mask over the semiconductor wafer covering the plurality of ICs, the plurality of ICs including metal bumps or pads with an oxidation layer. The method includes patterning the mask with a laser scribing process to provide a patterned mask with gaps, exposing regions of the semiconductor wafer between the ICs. The method includes plasma etching the semiconductor wafer through the gaps in the patterned mask to singulate the plurality of ICs and remove the oxidation layer from the metal bumps or pads. | 03-05-2015 |
20150122419 | LASER AND PLASMA ETCH WAFER DICING WITH A DOUBLE SIDED UV-CURABLE ADHESIVE FILM - Laser and plasma etch wafer dicing using UV-curable adhesive films. A mask is formed covering ICs formed on the wafer, as well as any bumps providing an interface to the ICs. The semiconductor wafer is coupled to a carrier substrate by a double-sided UV-curable adhesive film. The mask is patterned by laser scribing to provide a patterned mask with gaps. The patterning exposes regions of the semiconductor wafer, below thin film layers from which the ICs are formed. The semiconductor wafer is then etched through the gaps in the patterned mask to singulate the ICs. The UV-curable adhesive film is partially cured by UV irradiation through the carrier. The singulated ICs are then detached from the partially cured adhesive film still attached to the carrier substrate, for example individually by a pick and place machine. The UV-curable adhesive film may then be further cured for the film's complete removal from the carrier substrate. | 05-07-2015 |
20150200119 | LASER SCRIBING AND PLASMA ETCH FOR HIGH DIE BREAK STRENGTH AND CLEAN SIDEWALL - In embodiments, a hybrid wafer or substrate dicing process involving an initial laser scribe and subsequent plasma etch is implemented for die singulation. The laser scribe process may be used to cleanly remove a mask layer, organic and inorganic dielectric layers, and device layers. The laser etch process may then be terminated upon exposure of, or partial etch of, the wafer or substrate. In embodiments, a multi-plasma etching approach is employed to dice the wafers where an isotropic etch is employed to improve the die sidewall following an anisotropic etch. The isotropic etch removes anisotropic etch byproducts, roughness, and/or scalloping from the anisotropically etched die sidewalls after die singulation. | 07-16-2015 |
20160035577 | MULTI-LAYER MASK INCLUDING NON-PHOTODEFINABLE LASER ENERGY ABSORBING LAYER FOR SUBSTRATE DICING BY LASER AND PLASMA ETCH - Methods of dicing substrates having a plurality of ICs. A method includes forming a multi-layered mask comprising a laser energy absorbing, non-photodefinable topcoat disposed over a water-soluble base layer disposed over the semiconductor substrate. Because the laser light absorbing material layer is non-photodefinable, material costs associated with conventional photo resist formulations may be avoided. The mask is direct-write patterned with a laser scribing process to provide a patterned mask with gaps. The patterning exposes regions of the substrate between the ICs. Absorption of the mask layer within the laser emission band (e.g., UV band and/or green band) promotes good scribe line quality. The substrate may then be plasma etched through the gaps in the patterned mask to singulate the IC with the mask protecting the ICs during the plasma etch. The soluble base layer of the mask may then be dissolved subsequent to singulation, facilitating removal of the layer. | 02-04-2016 |
20160141210 | WAFER DICING USING FEMTOSECOND-BASED LASER AND PLASMA ETCH - Methods of dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. A method includes forming a mask above the semiconductor wafer, the mask including a layer covering and protecting the integrated circuits. The mask and a portion of the semiconductor wafer are patterned with a laser scribing process to provide a patterned mask and to form trenches partially into but not through the semiconductor wafer between the integrated circuits. Each of the trenches has a width. The semiconductor wafer is plasma etched through the trenches to for corresponding trench extensions and to singulate the integrated circuits. Each of the corresponding trench extensions has the width. | 05-19-2016 |
Patent application number | Description | Published |
20120328514 | N-ALKOXYAMIDE CONJUGATES AS IMAGING AGENTS - The present disclosure is directed to compounds, diagnostic agents, and related methods. In some cases, methods for treating patients are provided. More specifically, the disclosure provides compounds, diagnostic agents, and kits for detecting and/or imaging and/or monitoring elastin rich tissues. In addition, the disclosure provides methods of detecting and/or imaging and/or monitoring the presence of coronary plaque, carotid plaque, iliac/femoral plaque, aortic plaque, renal artery plaque, plaque of any arterial vessel, aneurism, vasculitis, other diseases of the arterial wall, and/or damage or structural changes in ligaments, uterus, lungs or skin, as indicated by changes in total vessel wall area, internal lumen size, and exterior arterial perimeter. | 12-27-2012 |
20130315822 | N-ALKOXYAMIDE CONJUGATES AS IMAGING AGENTS - The present disclosure is directed to compounds, diagnostic agents, and related methods. In some cases, methods for treating patients are provided. More specifically, the disclosure provides compounds, diagnostic agents, and kits for detecting and/or imaging and/or monitoring elastin rich tissues. In addition, the disclosure provides methods of detecting and/or imaging and/or monitoring the presence of coronary plaque, carotid plaque, iliac/femoral plaque, aortic plaque, renal artery plaque, plaque of any arterial vessel, aneurism, vasculitis, other diseases of the arterial wall, and/or damage or structural changes in ligaments, uterus, lungs or skin, as indicated by changes in total vessel wall area, internal lumen size, and exterior arterial perimeter. | 11-28-2013 |
20150078997 | N-ALKOXYAMIDE CONJUGATES AS IMAGING AGENTS - The present disclosure is directed to compounds, diagnostic agents, and related methods. In some cases, methods for treating patients are provided. More specifically, the disclosure provides compounds, diagnostic agents, and kits for detecting and/or imaging and/or monitoring elastin rich tissues. In addition, the disclosure provides methods of detecting and/or imaging and/or monitoring the presence of coronary plaque, carotid plaque, iliac/femoral plaque, aortic plaque, renal artery plaque, plaque of any arterial vessel, aneurism, vasculitis, other diseases of the arterial wall, and/or damage or structural changes in ligaments, uterus, lungs or skin, as indicated by changes in total vessel wall area, internal lumen size, and exterior arterial perimeter. | 03-19-2015 |
20150094465 | N-ALKOXYAMIDE CONJUGATES AS IMAGING AGENTS - The present disclosure is directed to compounds, diagnostic agents, and related methods. In some cases, methods for treating patients are provided. More specifically, the disclosure provides compounds, diagnostic agents, and kits for detecting and/or imaging and/or monitoring elastin rich tissues. In addition, the disclosure provides methods of detecting and/or imaging and/or monitoring the presence of coronary plaque, carotid plaque, iliac/femoral plaque, aortic plaque, renal artery plaque, plaque of any arterial vessel, aneurism, vasculitis, other diseases of the arterial wall, and/or damage or structural changes in ligaments, uterus, lungs or skin, as indicated by changes in total vessel wall area, internal lumen size, and exterior arterial perimeter. | 04-02-2015 |
Patent application number | Description | Published |
20130221714 | Soldier Platform and Energy Attenuation System - A soldier platform and energy attenuation system and method include a soldier platform system and energy attenuation system in a vehicle. In an embodiment, a tuneable energy attenuation system includes a plurality of energy attenuation units. The energy attenuation units are disposed to allow each energy attenuation unit to be in series and/or parallel to another energy attenuation unit. In addition, the tuneable energy attenuation system includes a base and a top. The energy attenuation units are disposed between the base and the top. | 08-29-2013 |
20130270879 | Soldier Support System in a Vehicle - A soldier restraint system and method secure a soldier in a vehicle. In one embodiment, the soldier restraint system includes a seat assembly comprising a seat and straps. The soldier restraint system also includes a restraint harness belt. The restraint harness belt is secured to the seat assembly. In addition, the soldier restraint system includes mounting assemblies. The straps attach the seat to the mounting assemblies. The mounting assemblies are securable to the vehicle. Attachment of at least one of the straps to the seat is releasable by a release assembly. The soldier restraint system also includes a strap retractor and a retractor strap. The retractor strap is extractable from the strap retractor. The retractor strap is retractable by the strap retractor. The strap retractor retracts the retractor strap upon achieving a strap threshold. | 10-17-2013 |
20130305914 | Vehicle Protection Grating - A vehicle protection grating, system, and method protect a vehicle against projectiles. In one embodiment, the vehicle protection grating includes a stabilizer. The vehicle protection grating also includes a second stabilizer on an opposing side of the vehicle protection grating from the stabilizer. The stabilizer and the second stabilizer each have a plurality of stabilizer links. Each stabilizer link is connected to another stabilizer link by a bar. In addition, the bar extends from the stabilizer to the second stabilizer. The vehicle protection grating is sufficiently flexible to be rolled into an overlapping configuration. | 11-21-2013 |
20130307306 | Wall Rail Platform and Release System - A system and method allow for a platform to be collapsed and moved in a vehicle. In one embodiment, a wall rail platform system disposed in a vehicle includes a collapsible platform. The collapsible platform has a position, which is a collapsed position or an un-collapsed position. The system also includes a rail and a carriage. The carriage is attached to the collapsible platform. The carriage is vertically moveable along the rail. The system further includes a soldier restraint system having a seat assembly and a single point release system. | 11-21-2013 |
20130307312 | Soldier Support System in a Vehicle - A soldier support system and a method for protecting soldiers are disposed in a vehicle. In an embodiment, a soldier support system includes a seat assembly. The soldier support system also includes a single point release system. The single point release system includes a release assembly. In addition, the single point release system includes a first seat side strap and a second seat side strap. Moreover, the single point release system includes a first main support strap and a second main support strap. The single point release system further includes a first side restraint tether and a second side restraint tether. | 11-21-2013 |
20130307313 | Soldier Platform System - A soldier platform system and a method for protecting soldiers are disposed in a vehicle. In an embodiment, a soldier platform system includes a seat assembly. The soldier platform system also includes a ratchet platform upon which an individual disposed in the seat assembly stands. The soldier support system also includes a single point release system. The single point release system includes a release assembly. In addition, the single point release system includes a first seat side strap and a second seat side strap. Moreover, the single point release system includes a first main support strap and a second main support strap. The single point release system further includes a first side restraint tether and a second side restraint tether. | 11-21-2013 |
20140021761 | Wall Rail Platform & System - A system and method allow for a platform to be collapsed and moved in a vehicle. In one embodiment, a wall rail platform system disposed in a vehicle includes a collapsible platform. The collapsible platform has a position, which is a collapsed position or an un-collapsed position. The system also includes a rail and a carriage. The carriage is attached to the collapsible platform. The carriage is vertically moveable along the rail. | 01-23-2014 |
20140035338 | Soldier Platform System - A soldier platform system and method includes a soldier platform system in a vehicle. In an embodiment, the soldier platform system includes a seat assembly. The seat assembly includes a seat and straps. The soldier platform system also includes a restraint harness belt. The restraint harness belt is secured to the seat assembly. In addition, the soldier platform system includes mounting assemblies. The straps attach the seat to the mounting assemblies. The soldier platform system further includes a ratchet platform that has a platform upper assembly and a platform lower assembly. The soldier platform system also has a strap retractor and a retractor strap. The retractor strap is extractable from the strap retractor, and the retractor strap is retractable by the strap retractor. Additionally, the strap retractor retracts the retractor strap upon achieving a strap threshold. Moreover, the strap retractor is secured to the platform lower assembly. | 02-06-2014 |
20150258920 | SOLDIER SUPPORT SYSTEM IN A VEHICLE - A soldier support system and a method for protecting soldiers are disposed in a vehicle. In an embodiment, a soldier support system includes a seat assembly. The soldier support system also includes a single point release system. The single point release system includes a release assembly. In addition, the single point release system includes a first seat side strap and a second seat side strap. Moreover, the single point release system includes a first main support strap and a second main support strap. The single point release system further includes a first side restraint tether and a second side restraint tether. | 09-17-2015 |
20150266396 | Soldier Platform System - A soldier platform system and method includes a soldier platform system in a vehicle. In an embodiment, the soldier platform system includes a seat assembly. The seat assembly includes a seat and straps. The soldier platform system also includes a restraint harness belt. The restraint harness belt is secured to the seat assembly. In addition, the soldier platform system includes mounting assemblies. The straps attach the seat to the mounting assemblies. The soldier platform system further includes a ratchet platform that has a platform upper assembly and a platform lower assembly. The soldier platform system also has a strap retractor and a retractor strap. The retractor strap is extractable from the strap retractor, and the retractor strap is retractable by the strap retractor. Additionally, the strap retractor retracts the retractor strap upon achieving a strap threshold. Moreover, the strap retractor is secured to the platform lower assembly. | 09-24-2015 |
20150274039 | Soldier Platform System - A soldier platform system and a method for protecting soldiers are disposed in a vehicle. In an embodiment, a soldier platform system includes a seat assembly. The soldier platform system also includes a ratchet platform upon which an individual disposed in the seat assembly stands. The soldier support system also includes a single point release system. The single point release system includes a release assembly. In addition, the single point release system includes a first seat side strap and a second seat side strap. Moreover, the single point release system includes a first main support strap and a second main support strap. The single point release system further includes a first side restraint tether and a second side restraint tether. | 10-01-2015 |