Patent application number | Description | Published |
20090141003 | Apparatus and method for operating a symmetric cipher engine in cipher-block chaining mode - An optical touch screen apparatus and method for manufacturing an optical touch screen apparatus are disclosed. The optical touch screen apparatus may comprise a touch screen plate having at least one pair of grooves formed on a front surface thereof; at least one pair of circuit boards disposed on the front surface of the touch screen plate, wherein each of the grooves respectively partially receives each of the circuit boards; an infrared emitting device for emitting an infrared beam, wherein the infrared emitting device is mounted on the first of the circuit boards; and an infrared receiving device for receiving the infrared beam, wherein the infrared receiving device is mounted on the second of the circuit boards and in optical communication with the infrared emitting device. | 06-04-2009 |
20090167724 | Optical Touch Panel - An optical touch panel is provided, which may comprise a rectangular position-detecting surface; a plurality of light-emitting element pairs configured for emitting a plurality of light beams; two reflectors configured for reflecting the plurality of light beams emitted by the plurality of light-emitting element pairs; and a plurality of light-receiving element pairs configured for receiving the plurality of light beams emitted by the plurality of light-emitting element pairs. The optical touch panel further may comprise a control circuit configured for causing the light-emitting element pairs to emit the plurality of light beams in a predetermined order to scan the position-detecting surface, and further configured for causing the plurality of light-receiving element pairs to receive the plurality of light beams, thereby forming optical paths on the position-detecting surface in a grid pattern. The control circuit further may be configured for determining the coordinates of an object positioned on the position-detecting surface. | 07-02-2009 |
20090322708 | Optical Touch Panel Having SMT Components As Optical Gates - An optical touch panel and corresponding method are disclosed. The optical touch panel may comprise a rectangular position-detecting surface; a frame-shaped circuit board surrounding the rectangular position-detecting surface; a plurality of light-emitting elements configured for emitting a plurality of light beams, wherein the light-emitting elements are arranged along a first side of the rectangular position-detecting surface and disposed on the frame-shaped circuit board; a plurality of light-receiving elements configured for receiving light beams emitted by the plurality of light-emitting elements; a plurality of SMT components configured as optical gates for isolating ambient light to prevent erroneous light detection; and a control circuit. The plurality of SMT components and the plurality of light-receiving elements may be alternately arranged along a second side of the rectangular position-detecting surface opposite to the first side and disposed on the frame-shaped circuit board. The plurality of light-receiving elements may be arranged behind the plurality of SMT components. | 12-31-2009 |
20140152625 | Optical Touch Panel Having SMT Components As Optical Gates - An optical touch panel and corresponding method are disclosed. The optical touch panel may include a rectangular position-detecting surface; a frame-shaped circuit board surrounding the rectangular position-detecting surface; a plurality of light-emitting elements configured for emitting a plurality of light beams, wherein the light-emitting elements are arranged along a first side of the rectangular position-detecting surface and disposed on the frame-shaped circuit board; a plurality of light-receiving elements configured for receiving light beams emitted by the plurality of light-emitting elements; a plurality of SMT components configured as optical gates for isolating ambient light to prevent erroneous light detection; and a control circuit. The plurality of SMT components and the plurality of light-receiving elements may be alternately arranged along a second side of the rectangular position-detecting surface opposite to the first side and disposed on the frame-shaped circuit board. The plurality of light-receiving elements may be arranged behind the plurality of SMT components. | 06-05-2014 |
Patent application number | Description | Published |
20110254044 | LIGHT EMITTING DEVICE AND METHOD OF FABRICATING A LIGHT EMITTING DEVICE - A light emitting device and a method of fabricating a light emitting device are provided. The light emitting device includes a carrier substrate, at least one epitaxy structure, a high resistant ring wall, a first electrode, and a second electrode. The epitaxy structure is disposed on the carrier substrate and includes a first semiconductor layer, an active layer, and a second semiconductor layer stacked in sequence. The first semiconductor layer is relatively away from the carrier substrate and the second semiconductor layer is relatively close to the carrier substrate. The high resistant ring wall surrounds the epitaxy structure and a width of the high resistant ring wall is greater than 5 μm. The first electrode is disposed between the carrier substrate and the epitaxy structure. The second electrode is disposed at a side of the epitaxy structure away from the carrier substrate. | 10-20-2011 |
20120098024 | NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE WITH MAGNETIC FILM - A nitride semiconductor light emitting device including an n-type nitride semiconductor layer, a p-type nitride semiconductor layer, a light emitting semiconductor layer, a first metal pad, a second metal pad, and a first magnetic material layer is provided. The light emitting semiconductor layer is disposed between the n-type nitride semiconductor layer and the p-type nitride semiconductor layer. The first metal pad is electrically connected to the n-type nitride semiconductor layer. The second metal pad is electrically connected to the p-type nitride semiconductor layer. The first magnetic material layer is disposed between the first metal pad and the n-type nitride semiconductor layer. A distribution area of the first magnetic material layer parallel to a (0001) plane of the n-type nitride semiconductor layer is greater than or equal to an area of the first metal pad parallel to the (0001) plane. | 04-26-2012 |
20120168801 | LIGHT EMITTING DEVICE AND PACKAGE STRUCTURE THEREOF - A light-emitting device package structure includes a carrier, at least one light-emitting device and a magnetic element. The magnetic element aids in enhancing overall luminous output efficiency. | 07-05-2012 |
20130168687 | ENHANCEMENT MODE GALLIUM NITRIDE BASED TRANSISTOR DEVICE - Provided is an enhancement mode GaN-based transistor device including an epitaxial stacked layer disposed on a substrate; a source layer and a drain layer disposed on a surface of the epitaxial stacked layer; a p-type metal oxide layer disposed between the source layer and the drain layer; and a gate layer disposed on the p-type metal oxide layer. Besides, the p-type metal oxide layer includes a body part disposed on the surface of the epitaxial stacked layer, and a plurality of extension parts connecting the body part and extending into the epitaxial stacked layer. With such structure, the enhancement mode GaN-based transistor device can effectively suppress generation of the gate leakage current. | 07-04-2013 |
20140054593 | NITRIDE SEMICONDUCTOR STRUCTURE - A nitride semiconductor structure is provided. The nitride semiconductor structure at least includes a silicon substrate, a AlN layer, a AlGaN layer and a GaN layer formed on the AlGaN layer. The silicon substrate has a surface tilted at 002-27-2014 | |
20140097442 | NITRIDE SEMICONDUCTOR DEVICE - A nitride semiconductor device includes a silicon substrate, a nucleation layer, a first buffer layer, a first type nitride semiconductor layer, a light-emitting layer and a second type nitride semiconductor layer is provided. The nucleation layer is disposed on the silicon substrate. The first buffer layer is disposed on the nucleation layer. The first buffer layer includes a dopant and Gallium, and an atomic radius of the dopant is larger than an atomic radius of Gallium. The first type nitride semiconductor layer is disposed over the first buffer layer. The light-emitting layer is disposed on the first type nitride semiconductor layer. The second type nitride semiconductor layer is disposed on the light-emitting layer. | 04-10-2014 |
20140097443 | NITRIDE SEMICONDUCTOR DEVICE - A nitride semiconductor device includes a silicon substrate, a nucleation layer, a buffer layer, a first type nitride semiconductor stacked layer, a light-emitting layer and a second type nitride semiconductor layer. The nucleation layer is disposed on the silicon substrate. The buffer layer is disposed on the nucleation layer. The first type nitride semiconductor stacked layer is disposed on the buffer layer. The first type nitride semiconductor stacked layer being a plurality of lattice mismatch stacked layers includes a plurality of first nitride semiconductor layers and a plurality of second nitride semiconductor layers. The first nitride semiconductor layers and the second nitride semiconductor layers are stacked alternately, and the first nitride semiconductor layers and the second nitride semiconductor layers are different material. The light-emitting layer is disposed on the first type nitride semiconductor stacked layer. The second type nitride semiconductor layer is disposed on the light-emitting layer. | 04-10-2014 |
20140097444 | NITRIDE SEMICONDUCTOR DEVICE - A nitride semiconductor device includes a silicon substrate, a nucleation layer, a buffer layer, a first type nitride semiconductor layer, a light-emitting layer and a second type nitride semiconductor layer is provided. The nucleation layer is disposed on the silicon substrate. The buffer layer is disposed on the nucleation layer. The first type nitride semiconductor layer is disposed on the buffer layer. The first type nitride semiconductor layer is doped with a first type dopant, at least one of the buffer layer and the first type nitride semiconductor layer comprises a codopant distributed therein, and an atomic radius of the codopant is larger than an atomic radius of the first type dopant. The light-emitting layer is disposed on the first type nitride semiconductor layer. The second type nitride semiconductor layer is disposed on the light-emitting layer, the second type nitride semiconductor layer comprising a second type dopant. | 04-10-2014 |
20140103354 | NITRIDE SEMICONDUCTOR STRUCTURE - A nitride semiconductor structure including a silicon substrate, a nucleation layer, a buffer layer and a nitride semiconductor layer is provided. The nucleation layer disposed on the silicon substrate includes a cubic silicon carbon nitride (SiCN) layer. The buffer layer is disposed on the nucleation layer. The nitride semiconductor layer is disposed on the buffer layer. | 04-17-2014 |
20140124833 | NITRIDE SEMICONDUCTOR STRUCTURE - A nitride semiconductor structure including a silicon substrate, a nucleation layer, a discontinuous defect blocking layer, a buffer layer and a nitride semiconductor layer is provided. The nucleation layer disposed on the silicon substrate, wherein the nucleation layer has a defect density d | 05-08-2014 |
20140131732 | LIGHT EMITTING DIODE - A light emitting diode device may include a carrier, a p-type and n-type semiconductor layers, an active layer, a first electrode and a second electrode is provided. The carrier has a growth surface and at least one nano-patterned structure on the growth surface, in which the carrier includes a substrate and a semiconductor capping layer disposed between the substrate and the n-type semiconductor layer. The n-type semiconductor layer and the p-type semiconductor layer are located over the growth surface of the carrier. The active layer is located between the n-type and p-type semiconductor layers, in which a wavelength λ of light emitted by the active layer is 222 nm≦λ≦405 nm, and a defect density of the active layer is less than or equal to 5×10 | 05-15-2014 |
20150137332 | CARRIER FOR A SEMICONDUCTOR LAYER - A carrier for carrying a semiconductor layer having a growth surface and at least one nano-patterned structure on the growth surface is provided. The at least one nano-patterned structure on the growth surface of the carrier has a plurality of mesas, a recess is formed between two adjacent mesas, in which a depth of the recess ranges from 10 nm to 500 nm, and a dimension of the mesa ranges from 10 nm to 800 nm. | 05-21-2015 |
Patent application number | Description | Published |
20100325508 | Method and Arrangement in a Telecommunication System in Which an Acknowledgment Message is Fed Back For a Bundle of Frames - A method in a receiving node for sending an acknowledgement/not acknowledgement “ACK/NACK” feedback report of received data units over a radio link is provided. When the receiving node have received ( | 12-23-2010 |
20110002307 | Controlling Node - A controlling node for a cellular communications system, arranged to handle the control of one or more user terminals in a first cell and configurable to receive transmissions from one or more user terminals in the first cell, with a defined periodicity. The controlling node includes a receipt monitor for one or more users in the cell, the receipt monitor being arranged to monitor timely receipt of the one or more of the certain transmissions from the one or more user terminals at the expected time for the defined periodicity, and to initiate handover of a user terminal from the first cell to another cell if the controlling node does not receive one or more of the certain transmissions at the expected time for the defined periodicity from the user terminal. | 01-06-2011 |
20120108252 | Methods and Arrangements for Mobility Management - The present invention relates to methods and devices for mobility management UE in a cellular communications system. A user equipment maintains ( | 05-03-2012 |
20140213255 | METHODS AND APPARATUSES FOR HANDLING A HANDOVER EVENT - A method in a wireless device for handling a handover event from a primary cell to a neighbour cell, the primary cell being serviced by a primary network node, the neighbour cell being serviced by a neighbour network node, and the wireless device, the primary network node, the primary cell, the neighbour network node and the neighbour cell being comprised in a wireless communications network. The method comprises: determining if an entering condition for a handover event is satisfied by determining if a first entering precondition and a second entering precondition are fulfilled. The first entering precondition is based on a measurement of signal quality from the primary cell; and the second entering precondition is based on a measurement of signal strength from the neighbour cell, and a measurement of signal strength from the primary cell. | 07-31-2014 |
20140256311 | Methods and Arrangement for Handling a Data Transferral in a Cellular Network - A method in a first base station ( | 09-11-2014 |
20140378142 | TRIGGERING A HANDOVER PROCESS BASED ON THE ACTIVITY OF A CONNECTION - Embodiments herein relates to a radio network node ( | 12-25-2014 |
20150092686 | Network-Assisted Cell Selection at Connection Re-establishment - According to several disclosed techniques, a wireless network provides assistance information to a mobile terminal for cell selection at re-establishment of a connection after a radio link failure. An example method is implemented in a mobile terminal served in a first cell of a wireless network, and includes receiving ( | 04-02-2015 |
20150110024 | Low Power Radio Base Station and a Method Therein for Scheduling Downlink Transmissions to a User Equipment - A low power RBS and a method therein for scheduling downlink transmission to a UE are provided. The low power RBS is associated to at least one macro RBS and the low power RBS is configured to provide radio coverage in a cell of a heterogeneous cellular communication network for scheduling downlink transmissions to a UE connected to the low power RBS. The method comprises receiving ( | 04-23-2015 |