| Patent application number | Description | Published |
|---|
| 20080207007 | Plasma Enhanced Cyclic Chemical Vapor Deposition of Silicon-Containing Films - The present invention is a process of plasma enhanced cyclic chemical vapor deposition of silicon nitride, silicon carbonitride, silicon oxynitride, silicon carboxynitride, and carbon doped silicon oxide from alkylaminosilanes having Si—H | 08-28-2008 |
| 20080254218 | Metal Precursor Solutions For Chemical Vapor Deposition - Metal source containing precursor liquid solutions for chemical vapor deposition processes, including atomic layer deposition, for fabricating conformal metal-containing films on substrates are described. More specifically, the metal source precursor liquid solutions are comprised of (i) at least one metal complex selected from β-diketonates, β-ketoiminates, β-diiminates, alkyl metal, metal carbonyl, alkyl metal carbonyl, aryl metal, aryl metal carbonyl, cyclopentadienyl metal, cyclopentadienyl metal isonitrile, cyclopentadienyl metal nitrile, cyclopentadienyl metal carbonyl, metal alkoxide, metal ether alkoxide, and metal amides wherein the ligand can be monodentate, bidentate and multidentate coordinating to the metal atom and the metal is selected from group 2 to 14 elements, and (ii) a solvent selected from organic amides including linear amides and cyclic amides for such metal source containing precursors. | 10-16-2008 |
| 20080286464 | Group 2 Metal Precursors For Depositing Multi-Component Metal Oxide Films - Novel Sr and Ba complexes containing both beta-diketonates and N-methyl-pyrrolidone were synthesized and characterized. TGA experiments indicated these complexes are volatile, they can be employed as potential precursors for ALD strontium titanate (STO) or barium strontium titanate films (BST) films in semiconductor fabrication. | 11-20-2008 |
| 20080318443 | Plasma enhanced cyclic deposition method of metal silicon nitride film - The present invention relates to a method for forming a metal silicon nitride film according to a cyclic film deposition under plasma atmosphere with a metal amide, a silicon precursor, and a nitrogen source gas as precursors. The deposition method for forming a metal silicon nitride film on a substrate comprises steps of: pulsing a metal amide precursor; purging away the unreacted metal amide; introducing nitrogen source gas into reaction chamber under plasma atmosphere; purging away the unreacted nitrogen source gas; pulsing a silicon precursor; purging away the unreacted silicon precursor; introducing nitrogen source gas into reaction chamber under plasma atmosphere; and purging away the unreacted nitrogen source gas. | 12-25-2008 |
| 20090130338 | Group 2 Metal Precursors for Depositing Multi-Component Metal Oxide Films - Novel Sr and Ba complexes containing both beta-diketonates and N-methyl-pyrrolidone were synthesized and characterized. TGA experiments indicated these complexes are volatile, they can be employed as precursors for ALD strontium titanate (STO) or barium strontium titanate films (BST) films in semiconductor fabrication. | 05-21-2009 |
| 20090130414 | Preparation of A Metal-containing Film Via ALD or CVD Processes - Methods for the deposition via chemical vapor deposition or atomic layer deposition of metal containing films, such as, for example, metal silicate or metal silicon oxynitride films are described herein. In one embodiment, the method for depositing a metal-containing film comprises the steps of introducing into a reaction chamber, a metal amide precursor, a silicon-containing precursor, and an oxygen source wherein each precursor is introduced after introducing a purge gas. | 05-21-2009 |
| 20090136677 | Metal Complexes of Tridentate Beta-Ketoiminates - Metal-containing complexes of a tridentate beta-ketoiminate, one embodiment of which is represented by the structure: | 05-28-2009 |
| 20090136685 | Metal Complexes of Tridentate Beta-Ketoiminates - Metal-containing complexes of a tridentate beta-ketoiminate, one embodiment of which is represented by the structure: | 05-28-2009 |
| 20100038785 | Materials for Adhesion Enhancement of Copper Film on Diffusion Barriers - We have used the state-of-the-art computational chemistry techniques to identify adhesion promoting layer materials that provide good adhesion of copper seed layer to the adhesion promoting layer and the adhesion promoting layer to the barrier layer. We have identified factors responsible for providing good adhesion of copper layer on various metallic surfaces and circumstances under which agglomeration of copper film occur. Several promising adhesion promoting layer materials based on chromium alloys have been predicted to be able to significantly enhance the adhesion of copper films. Chromium containing complexes of a polydentate β-ketoiminate have been identified as chromium containing precursors to make the alloys with chromium. | 02-18-2010 |
| 20100075067 | Preparation of Metal Oxide Thin Film Via Cyclic CVD or ALD - A cyclic deposition process to make a metal oxide film on a substrate, which comprises the steps: introducing a metal ketoiminate into a deposition chamber and depositing the metal ketoiminate on a heated substrate; purging the deposition chamber to remove unreacted metal ketominate and any byproduct; introducing an oxygen-containing source to the heated substrate; purging the deposition chamber to remove any unreacted chemical and byproduct; and, repeating the cyclic deposition process until a desired thickness of film is established. | 03-25-2010 |
| 20100119726 | Group 2 Metal Precursors For Deposition Of Group 2 Metal Oxide Films - This invention is related to Group 2 metal-containing polydentate β-ketoiminate precursors and compositions comprising Group 2 metal-containing polydentate β-ketoiminate precursors, wherein the polydentate β-ketoiminate precursors incorporate an alkoxy group in the imino portion of the molecule. The compounds and compositions are useful for fabricating metal containing films on substrates such as silicon, metal nitride, metal oxide and other metal layers via chemical vapor deposition (CVD) processes. | 05-13-2010 |
| 20100143607 | Precursors for Depositing Group 4 Metal-Containing Films - Described herein are Group 4 metal-containing precursors, compositions comprising Group 4 metal-containing precursors, and deposition processes for fabricating conformal metal containing films on substrates. In one aspect, the Group 4 metal-containing precursors are represented by the following formula I: | 06-10-2010 |
| 20100173075 | High Coordination Sphere Group 2 Metal B-Diketiminate Precursors - The present invention is directed to high coordination sphere Group 2 metal β-diketiminate compositions, such as bis(N-(2,2-methoxyethyl)-4-(2,2-methoxyethylimino)-2-penten-2-aminato) barium; and the deposition of the metals of such metal ligand compositions by chemical vapor deposition, pulsed chemical vapor deposition, molecular layer deposition or atomic layer deposition to produce Group 2 metal containing films, such as barium strontium titanate films or strontium titanate films or barium doped lanthanate as high k materials for electronic device manufacturing. | 07-08-2010 |
| 20100304047 | Low Temperature Deposition of Silicon-Containing Films - This invention discloses the method of forming silicon nitride, silicon oxynitride, silicon oxide, carbon-doped silicon nitride, carbon-doped silicon oxide and carbon-doped oxynitride films at low deposition temperatures. The silicon containing precursors used for the deposition are monochlorosilane (MCS) and monochloroalkylsilanes. The method is preferably carried out by using plasma enhanced atomic layer deposition, plasma enhanced chemical vapor deposition, and plasma enhanced cyclic chemical vapor deposition. | 12-02-2010 |
| 20110027617 | Methods of Forming Strontium Titanate Films - Embodiments of the current invention include methods of forming a strontium titanate (SrTiO | 02-03-2011 |
| 20110027960 | Methods of Forming Strontium Titanate Films - Embodiments of the current invention include methods of forming a strontium titanate (SrTiO | 02-03-2011 |
| 20110040124 | Method for Preparing Metal Complexes of Polydentate Beta-Ketoiminates - A method for making a group 2 metal-containing polydentate β-ketoiminate represented by the following structure A: | 02-17-2011 |
| 20110135838 | Liquid Precursor for Depositing Group 4 Metal Containing Films - The present invention is related to a family of liquid group 4 precursors represented by the formula: (pyr*)M(OR | 06-09-2011 |
| 20110212629 | LIQUID COMPOSITION CONTAINING AMINOETHER FOR DEPOSITION OF METAL-CONTAINING FILMS - A formulation, comprising: a) at least one metal-ligand complex, wherein one or more ligands are selected from the group consisting of β-diketonates, β-ketoiminates, β-ketoesterates, β-diiminates, alkyls, carbonyls, alkyl carbonyls, cyclopentadienyls, pyrrolyls, alkoxides, amidinates, imidazolyls, and mixtures thereof; and the metal is selected from Group 2 to 16 elements of the Periodic Table of the Elements; and, b) at least one aminoether selected from the group consisting of R | 09-01-2011 |
| 20110250126 | GROUP 4 METAL PRECURSORS FOR METAL-CONTAINING FILMS - The present invention is related to a family of Group 4 metal precursors represented by the formula: | 10-13-2011 |
| 20110256314 | METHODS FOR DEPOSITION OF GROUP 4 METAL CONTAINING FILMS - A method for forming metal-containing films by atomic layer deposition using precursors of the formula: | 10-20-2011 |
| 20110262642 | Process for Producing Silicon and Oxide Films from Organoaminosilane Precursors - A method for depositing a silicon containing film on a substrate using an organoaminosilane is described herein. The organoaminosilanes are represented by the formulas: | 10-27-2011 |
| 20120034767 | Method of Making a Multicomponent Film - Described herein is a method and liquid-based precursor composition for depositing a multicomponent film. In one embodiment, the method and compositions described herein are used to deposit Germanium Tellurium (GeTe), Antimony Tellurium (SbTe), Antimony Germanium (SbGe), Germanium Antimony Tellurium (GST), Indium Antimony Tellurium (IST), Silver Indium Antimony Tellurium (AIST), Cadmium Telluride (CdTe), Cadmium Selenide (CdSe), Zinc Telluride (ZnTe), Zinc Selenide (ZnSe), Copper indium gallium selenide (CIGS) films or other tellurium and selenium based metal compounds for phase change memory and photovoltaic devices. | 02-09-2012 |
| 20120045589 | Amidate Precursors For Depositing Metal Containing Films - Volatile metal amidate metal complexes are exemplified by bis(N-(tert-butyl)ethylamidate)bis(ethylmethylamido) titanium; (N-(tert-butyl)(tert-butyl)amidate)tris(ethylmethylamido) titanium; bis(N-(tert-butyl)(tert-butyl)amidate)bis(dimethylamido) titanium and (N-(tert-butyl)(tert-butyl)amidate)tris(dimethylamido) titanium. The term “volatile” referes to any precursor of this invention having vapor pressure above 0.5 torr at temperature less than 200° C. Metal-containing film depositions using these metal amidate ligands are also described. | 02-23-2012 |
| 20120121806 | Complexes Of Imidazole Ligands - Metal imidazolate complexes are described where imidazoles ligands functionalized with bulky groups and their anionic counterpart, i.e., imidazolates are described. Compounds comprising one or more such polyalkylated imidazolate anions coordinated to a metal or more than one metal, selected from the group consisting of alkali metals, transition metals, lanthanide metals, actinide metals, main group metals, including the chalcogenides, are contemplated. Alternatively, multiple different imidazole anions, in addition to other different anions, can be coordinated to metals to make new complexes. The synthesis of novel compounds and their use to form thin metal containing films is also contemplated. | 05-17-2012 |
| 20120128897 | Organoaminosilane Precursors and Methods for Depositing Films Comprising Same - Described herein are precursors and methods of forming dielectric films. In one aspect, there is provided a silicon precursor having the following formula I: | 05-24-2012 |
| 20120171378 | Binary and Ternary Metal Chalcogenide Materials and Method of Making and Using Same - This invention discloses the synthesis of metal chalcogenides using chemical vapor deposition (CVD) process, atomic layer deposition (ALD) process, or wet solution process. Ligand exchange reactions of organosilyltellurium or organosilylselenium with a series of metal compounds having neucleophilic substituents generate metal chalcogenides. This chemistry is used to deposit germanium-antimony-tellurium (GeSbTe) and germanium-antimony-selenium (GeSbSe) films or other tellurium and selenium based metal compounds for phase change memory and photovoltaic devices. | 07-05-2012 |
| 20120171874 | Plasma Enhanced Cyclic Chemical Vapor Deposition of Silicon- Containing Films - The present invention is a process of plasma enhanced cyclic chemical vapor deposition of silicon nitride, silicon carbonitride, silicon oxynitride, silicon carboxynitride, and carbon doped silicon oxide from alkylaminosilanes having Si—H | 07-05-2012 |
| 20120201958 | Multidentate Ketoimine Ligands For Metal Complexes - The present invention is a plurality of metal-containing complexes of a multidentate ketoiminate. | 08-09-2012 |
| 20120220076 | Method of Making a Multicomponent Film - Described herein is a method and liquid-based precursor composition for depositing a multicomponent film. In one embodiment, the method and compositions described herein are used to deposit Germanium Tellurium (GeTe), Antimony Tellurium (SbTe), Antimony Germanium (SbGe), Germanium Antimony Tellurium (GST), Indium Antimony Tellurium (IST), Silver Indium Antimony Tellurium (AIST), Cadmium Telluride (CdTe), Cadmium Selenide (CdSe), Zinc Telluride (ZnTe), Zinc Selenide (ZnSe), Copper indium gallium selenide (CIGS) films or other tellurium and selenium based metal compounds for phase change memory and photovoltaic devices. | 08-30-2012 |
| 20130008345 | Novel Metal Complexes for Metal-Containing Film Deposition - Novel families of tri-valent metal complexes including scandium, yttrium, lanthanum, cerium, praseodymium, neodymium, samarium, europium, gadolinium, terbium, dysprosium, holmium, erbium, thulium, ytterbium, lutetium, aluminum, gallium, indium, manganese, antimony, bismuth; and of divalent metal complexes including magnesium, calcium, strontium, barium, manganese, cobalt, iron, nickel, ruthenium, copper, zinc, cadium are disclosed. These metal complexes can be used as precursors to deposit metal or metal oxide films in semi-conductor industries. | 01-10-2013 |
| 20130011579 | Metal-Enolate Precursors For Depositing Metal-Containing Films - Organometallic compounds suitable for use as vapor phase deposition precursors for metal-containing films are provided. Methods of depositing metal-containing films using certain organometallic precursors are also provided. Such metal-containing films are particularly useful in the manufacture of electronic devices. | 01-10-2013 |
| 20130030191 | Group IV Metal Complexes For Metal-Containing Film Deposition - Metal-containing complexes with general formula (1) (R | 01-31-2013 |
| 20130066082 | Metal-Enolate Precursors For Depositing Metal-Containing Films - Organometallic compounds suitable for use as vapor phase deposition precursors for metal-containing films are provided. Methods of depositing metal-containing films using certain organometallic precursors are also provided. Such metal-containing films are particularly useful in the manufacture of electronic devices. | 03-14-2013 |
| 20130078391 | Complexes Of Imidazole Ligands - Metal imidazolate complexes are described where imidazoles ligands functionalized with bulky groups and their anionic counterpart, i.e., imidazolates are described. Compounds comprising one or more such polyalkylated imidazolate anions coordinated to a metal or more than one metal, selected from the group consisting of alkali metals, transition metals, lanthanide metals, actinide metals, main group metals, including the chalcogenides, are contemplated. Alternatively, multiple different imidazole anions, in addition to other different anions, can be coordinated to metals to make new complexes. The synthesis of novel compounds and their use to form thin metal containing films is also contemplated. | 03-28-2013 |
| 20130078392 | HALOGENATED ORGANOAMINOSILANE PRECURSORS AND METHODS FOR DEPOSITING FILMS COMPRISING SAME - Described herein are precursors and methods of forming films. In one aspect, there is provided a precursor having Formula I: | 03-28-2013 |
| 20130129940 | ORGANOAMINOSILANE PRECURSORS AND METHODS FOR MAKING AND USING SAME - Described herein are organoaminosilane precursors which can be used to deposit silicon containing films which contain silicon and methods for making these precursors. Also disclosed herein are deposition methods for making silicon-containing films or silicon containing films using the organoaminosilane precursors described herein. Also disclosed herein are the vessels that comprise the organoaminosilane precursors or a composition thereof that can be used, for example, to deliver the precursor to a reactor in order to deposit a silicon-containing film. | 05-23-2013 |
| 20130180215 | CATALYST AND FORMULATIONS COMPRISING SAME FOR ALKOXYSILANES HYDROLYSIS REACTION IN SEMICONDUCTOR PROCESS - A stable formulation comprising a silicon containing precursor selected from an alkoxysilane, aryloxysilane, or alkylalkoxysilane and a catalyst compound comprising a haloalkoxyalkylsilane or haloaryloxyalkylsilane wherein the substitutents within the silicon-containing precursor and catalyst compound are the same are described herein. More specifically, the formulation comprises a silicon-containing precursor comprising an alkoxyalkylsilane or aryloxysilane having a formula of Si(OR | 07-18-2013 |
| 20130189853 | Low Temperature Deposition of Silicon-Containing Films - This invention discloses the method of forming silicon nitride, silicon oxynitride, silicon oxide, carbon-doped silicon nitride, carbon-doped silicon oxide and carbon-doped oxynitride films at low deposition temperatures. The silicon containing precursors used for the deposition are monochlorosilane (MCS) and monochloroalkylsilanes. The method is preferably carried out by using plasma enhanced atomic layer deposition, plasma enhanced chemical vapor deposition, and plasma enhanced cyclic chemical vapor deposition. | 07-25-2013 |
| 20130196082 | ALKOXYAMINOSILANE COMPOUNDS AND APPLICATIONS THEREOF - Alkoxyaminosilane compounds having formula I, and processes and compositions for depositing a silicon-containing film, are described herein: | 08-01-2013 |
| 20130210217 | Precursors for GST Films in ALD/CVD Processes - The present invention is a process of making a germanium-antimony-tellurium alloy (GST) or germanium-bismuth-tellurium (GBT) film using a process selected from the group consisting of atomic layer deposition and chemical vapor deposition, wherein a silylantimony precursor is used as a source of antimony for the alloy film. The invention is also related to making antimony alloy with other elements using a process selected from the group consisting of atomic layer deposition and chemical vapor deposition, wherein a silylantimony or silylbismuth precursor is used as a source of antimony or bismuth. | 08-15-2013 |
| 20130243968 | CATALYST SYNTHESIS FOR ORGANOSILANE SOL-GEL REACTIONS - A formulation comprising a first organosilane precursor and a halogenation reagent wherein at least a portion or all of the halogenation reagent reacts to provide the second organosilane precursor. Methods of generating such formulation in situ from readily available pure materials are also provided. Further provided are methods of using the formulations as the precursor for a flowable vapor deposition process. | 09-19-2013 |
| 20130295779 | HIGH TEMPERATURE ATOMIC LAYER DEPOSITION OF SILICON OXIDE THIN FILMS - Composition(s) and atomic layer deposition (ALD) process(es) for the formation of a silicon oxide containing film at one or more deposition temperature of about 500° C. is disclosed. In one aspect, the composition and process use one or more silicon precursors selected from compounds having the following formulae I, II, described and combinations thereof | 11-07-2013 |
| 20130312855 | Vessel with Filter - A vessel for conveying a precursor-containing fluid stream from a precursor material contained within the vessel, the vessel comprising: an interior volume defined by a top, one or more sidewalls, and a base; and at least one fluid outlet for vaporized precursor, and at least one particle barrier that defines at least one particle restricted space within the interior volume, wherein said particle barrier comprises at least one 3-dimensional filter. A method for using the apparatus is also disclosed. | 11-28-2013 |
| 20130319290 | ORGANOAMINODISILANE PRECURSORS AND METHODS FOR DEPOSITING FILMS COMPRISING SAME - Described herein are precursors and methods for forming silicon-containing films. In one aspect, there is a precursor of following Formula I: | 12-05-2013 |
| 20130323435 | ORGANOAMINODISILANE PRECURSORS AND METHODS FOR DEPOSITING FILMS COMPRISING SAME - Described herein are precursors and methods for forming silicon-containing films. In one aspect, there is provided a precursor of Formula I: | 12-05-2013 |
| 20130330937 | Process for Producing Silicon and Oxide Films from Organoaminosilane Precursors - A method for depositing a silicon containing film on a substrate using an organoaminosilane is described herein. The organoaminosilanes are represented by the formulas: | 12-12-2013 |
| 20140024173 | Method of Making a Multicomponent Film - Described herein is a method and liquid-based precursor composition for depositing a multicomponent film. In one embodiment, the method and compositions described herein are used to deposit Germanium Tellurium (GeTe), Antimony Tellurium (SbTe), Antimony Germanium (SbGe), Germanium Antimony Tellurium (GST), Indium Antimony Tellurium (IST), Silver Indium Antimony Tellurium (AIST), Cadmium Telluride (CdTe), Cadmium Selenide (CdSe), Zinc Telluride (ZnTe), Zinc Selenide (ZnSe), Copper indium gallium selenide (CIGS) films or other tellurium and selenium based metal compounds for phase change memory and photovoltaic devices. | 01-23-2014 |
| 20140030448 | NON-OXYGEN CONTAINING SILICON-BASED FILMS AND METHODS OF FORMING THE SAME - Disclosed herein are non-oxygen containing silicon-based films, and methods for forming the same. The non-oxygen silicon-based films contain >50 atomic % of silicon. In one aspect, the silicon-based films have a composition SixCyNz wherein x is about 51 to 100, y is 0 to 49, and z is 0 to 50 atomic weight (wt.) percent (%) as measured by XPS. In one embodiment, the non-oxygen silicon-based films were deposited using at least one organosilicon precursor having at least two SiH | 01-30-2014 |
| 20140158580 | ALKOXYSILYLAMINE COMPOUNDS AND APPLICATIONS THEREOF - Described herein are alkoxysilylamine precursors having the following Formulae A and B: | 06-12-2014 |
| 20140191423 | Splashguard and Inlet Diffuser for High Vacuum, High Flow Bubbler Vessel - The present invention is a bubbler having a diptube inlet ending in a bubble size reducing outlet and at least one baffle disc positioned between the outlet of the diptube and the outlet of the bubbler to provide a narrow annular space between the baffle disc and the wall of the bubbler to prevent liquid droplets from entering the outlet to the bubbler. The bubble size reducing outlet is an elongated cylindrical porous metal frit situated in a sump of approximately the same dimensions. A metal frit is placed at the inlet of the outlet of the bubbler. The present invention is also a process of delivering a chemical precursor from a bubbler vessel having the above structure. | 07-10-2014 |
| 20140193578 | Splashguard and Inlet Diffuser for High Vacuum, High Flow Bubbler Vessel - The present invention is a bubbler having a diptube inlet ending in a bubble size reducing outlet and at least one baffle disc positioned between the outlet of the diptube and the outlet of the bubbler to provide a narrow annular space between the baffle disc and the wall of the bubbler to prevent liquid droplets from entering the outlet to the bubbler. The bubble size reducing outlet is an elongated cylindrical porous metal frit situated in a sump of approximately the same dimensions. A metal frit is placed at the inlet of the outlet of the bubbler. The present invention is also a process of delivering a chemical precursor from a bubbler vessel having the above structure. | 07-10-2014 |
| 20140272194 | ORGANOAMINOSILANE PRECURSORS AND METHODS FOR MAKING AND USING SAME - Described herein are organoaminosilane precursors which can be used to deposit silicon containing films which contain silicon and methods for making these precursors. Also disclosed herein are deposition methods for making silicon-containing films or silicon containing films using the organoaminosilane precursors described herein. Also disclosed herein are the vessels that comprise the organoaminosilane precursors or a composition thereof that can be used, for example, to deliver the precursor to a reactor in order to deposit a silicon-containing film. | 09-18-2014 |
| 20140287164 | COMPOSITIONS AND PROCESSES FOR DEPOSITING CARBON-DOPED SILICON-CONTAINING FILMS - Described herein are compositions for depositing a carbon-doped silicon containing film wherein the composition comprises a first precursor comprising at least one compound selected from the group consisting of: an organoaminoalkylsilane having a formula of R | 09-25-2014 |
| 20140308802 | METHOD OF MAKING A MULTICOMPONENT FILM - Described herein is a method and precursor composition for depositing a multicomponent film. In one embodiment, the method and composition described herein is used to deposit a germanium-containing film such as Germanium Tellurium, Antimony Germanium, and Germanium Antimony Tellurium (GST) films via an atomic layer deposition (ALD) and/or other germanium, tellurium and selenium based metal compounds for phase change memory and photovoltaic devices. In this or other embodiments, the Ge precursor used comprises trichlorogermane. | 10-16-2014 |
| 20150014823 | COMPOSITIONS AND METHODS FOR MAKING SILICON CONTAINING FILMS - Described herein are low temperature processed high quality silicon containing films. Also disclosed are methods of forming silicon containing films at low temperatures. In one aspect, there are provided silicon-containing film having a thickness of about 2 nm to about 200 nm and a density of about 2.2 g/cm | 01-15-2015 |
| 20150021599 | BARRIER MATERIALS FOR DISPLAY DEVICES - Described herein are apparatus comprising one or more silicon-containing layers and a metal oxide layer. Also described herein are methods for forming one or more silicon-containing layers to be used, for example, as passivation layers in a display device. In one particular aspect, the apparatus comprises a transparent metal oxide layer, a silicon oxide layer and a silicon nitride layer. In this or other aspects, the apparatus is deposited at a temperature of 350° C. or below. The silicon-containing layers described herein comprise one or more of the following properties: a density of about 1.9 g/cm | 01-22-2015 |
| 20150024608 | Organoaminodisilane Precursors and Methods for Depositing Films Comprising Same - Described herein are precursors and methods for forming silicon-containing films. In one aspect, there is provided a precursor of Formula I: | 01-22-2015 |
| 20150030782 | Volatile dihydropyrazinly and dihydropyrazine metal complexes - A composition comprising dihydropyrazinyl anions that can be coordinated as 6 electron ligands to a broad range of different metals to yield volatile metal complexes for ALD and CVD depositions are described herein. Also described herein are undeprotonated dihydropyrazines that can coordinate to metals as stabilizing neutral ligands. In one embodiment, the composition is used for the direct liquid injection delivery of the metal dihydropyrazinyl complex precursor to the chamber of an ALD or CVD chamber for the deposition of metal-containing thin films such as, for example, ruthenium or cobalt metal films. | 01-29-2015 |
| 20150087139 | ORGANOAMINOSILANE PRECURSORS AND METHODS FOR DEPOSITING FILMS COMPRISING SAME - Described herein are precursors and methods for forming silicon-containing films. In one aspect, the precursor comprises a compound represented by one of following Formulae A through E below: | 03-26-2015 |
