Patent application number | Description | Published |
20100300207 | PRESSURE SENSOR FOR HARSH MEDIA SENSING AND FLEXIBLE PACKAGING - MEMS pressure sensing elements, the fabrication methods of the sensing elements, and the packaging methods using the new sensing elements are introduced to provide a way for a harsh media absolute pressure sensing and eliminating the negative effects caused by the gel used in the prior art. The invention uses vertical conductive vias to electrically connect the enclosed circuit to the outside, and uses a fusion bond method to attach a cap with the embedded conductive vias over a device die having a circuit for example a piezoresistive Wheatstone bridge to sense pressure. New packaging methods comprise a) a two-pocket housing structure and using a surface mounting method to attach a new sensing element into one pocket by a ball grid array (BGA), and b) a single pocket structure and using conventional die attach and wire bonding. Both methods can be used for harsh media pressure sensing but without the negative effects caused by the gel in prior art. | 12-02-2010 |
20100301431 | THIN SEMICONDUCTOR DEVICE HAVING EMBEDDED DIE SUPPORT AND METHODS OF MAKING THE SAME - Ultra-thin semiconductor devices, including piezoresistive sensing elements can be formed in a wafer stack that facilitates handling many thin device dice at a wafer level. Three embodiments are provided to form the thin dice in a wafer stack using three different fabrication techniques that include anodic bonding, adhesive bonding and fusion bonding. A trench is etched around each thin die to separate the thin die from others in the wafer stack. A tether layer, also known as a tether, is used to hold thin dice or dice in a wafer stack. Such as wafer stack holds many thin dice together at a wafer level for handling and enables easier die picking in packaging processes. | 12-02-2010 |
20120149153 | Thin Semiconductor Device Having Embedded Die Support and Methods of Making the Same - Ultra-thin semiconductor devices, including piezoresistive sensing elements can be formed in a wafer stack that facilitates handling many thin device dice at a wafer level. Three embodiments are provided to form the thin dice in a wafer stack using three different fabrication techniques that include anodic bonding, adhesive bonding and fusion bonding. A trench is etched around each thin die to separate the thin die from others in the wafer stack. A tether layer, also known as a tether, is used to hold thin dice or dice in a wafer stack. Such as wafer stack holds many thin dice together at a wafer level for handling and enables easier die picking in packaging processes. | 06-14-2012 |
20120153409 | Thin Semiconductor Device Having Embedded Die Support and Methods of Making the Same - Ultra-thin semiconductor devices, including piezo-resistive sensing elements can be formed a wafer stack that facilitates handling many thin device dice at a wafer level. Three embodiments are provided to form the thin dice in a wafer stack using three different fabrication techniques that include anodic bonding, adhesive bonding and fusion bonding. A trench is etched around each thin die to separate the thin die from others in the wafer stack. A tether layer, also known as a tether, is used to hold thin dice or dice in a wafer stack. Such as wafer stack holds many thin dice together at a wafer level for handling and enables easier die picking in packaging processes. | 06-21-2012 |
20130105999 | THIN SEMICONDUCTOR DIE PACKAGE | 05-02-2013 |
20140137653 | PIEZORESISTIVE TRANSDUCER WITH LOW THERMAL NOISE - In a MEMS PRT having a diaphragm that is located offset from the center of the die, thermally-induced thermal noise in the output of a Wheatstone bridge circuit is reduced by locating the Wheatstone bridge circuit away from the largest area of the die and supporting pedestal. | 05-22-2014 |
20140239424 | CAP BONDING STRUCTURE AND METHOD FOR BACKSIDE ABSOLUTE PRESSURE SENSORS - A pressure sensor includes a pressure sensing element having a diaphragm, a cavity, and bridge circuitry connected to the diaphragm. A top surface is formed as part of the pressure sensing element such that at least a portion of the top surface is part of the diaphragm, and the plurality of piezoresistors are located on the top surface. A cap is bonded to the top surface through the use of a plurality of layers. One of the layers is a silicon dioxide layer, another layer is a silicon nitride layer, another layer is an oxide layer, and another of the layers is a polysilicon layer. The plurality of layers provides proper bonding between the cap and the top surface of the pressure sensing element. | 08-28-2014 |
20150040675 | Absolute Pressure Sensor With Improved Bonding Boundary - A pressure sensor includes a top cap with a recess formed in an end of the top cap and a cavity formed in the end of the top cap to communicate with the recess. The cavity extends further axially into the top cap than the recess thereby having depth greater than a depth of the recess. Outer edges of the recess extend laterally outward beyond outer edges of the cavity thereby defining a bonding boundary. A silicon substrate has a sensing circuit on a top side thereof. The top cap is bonded to the top side of the silicon substrate in a range from the outer edges of the top cap to the bonding boundary. The recess and the cavity of the top cap face the top side of the silicon substrate and form a reference vacuum cavity. When pressure is exerted on a backside of the substrate, a portion of the substrate is constructed and arranged to deflect. | 02-12-2015 |