Patent application number | Description | Published |
20110245948 | Method And Circuit To Generate Race Condition Test Data At Multiple Supply Voltages - A method and circuit for characterizing a process variation of a semiconductor die is disclosed. In a particular embodiment, the method includes operating a circuit at multiple supply voltage levels to generate race condition testing data. The circuit is disposed on at least one die of a wafer and includes at least one racing path circuit having at least two paths. The method further includes collecting the race condition testing data and evaluating the collected race condition testing data. The race condition testing data is correlated to a process variation of the at least one die. | 10-06-2011 |
20120210284 | Method and Apparatus for Characterizing and Reducing Proximity Effect on Cell Electrical Characteristics - Circuit elements are characterized for effects of proximity context on electrical characteristic. Based on the characterization, proximity context cell models, and corresponding modeled electrical characteristic values are obtained. Logic cells are characterized and modeled according to the proximity context cell models. Optionally the electrical characteristic can be time delay, leakage, dynamic power, or coupling noise among other parameters. | 08-16-2012 |
20130007681 | YIELD BASED FLOP HOLD TIME AND SETUP TIME DEFINITION - Systems and method for defining a timing parameter for a circuit element based on process variation, including, determining a point of failure parameter associated with the timing parameter, the point of failure parameter correlated with a specific value of the process variation. A standard deviation associated with the point of failure parameter is determined. The process variation per the standard deviation is calculated and the timing parameter for the circuit element is defined as a function of the failure parameter, the standard deviation, and the process variation per the standard deviation. A margin factor, which varies with the standard deviation, is optionally applied to the timing parameter. The timing parameter may be one of a setup time or hold time. | 01-03-2013 |
20140246753 | HIGH QUALITY FACTOR INDUCTOR IMPLEMENTED IN WAFER LEVEL PACKAGING (WLP) - Some novel features pertain to a first example provides a semiconductor device that includes a printed circuit board (PCB), asset of solder balls and a die. The PCB includes a first metal layer. The set of solder balls is coupled to the PCB. The die is coupled to the PCB through the set of solder balls. The die includes a second metal layer and a third metal layer. The first metal layer of the PCB, the set of solder balls, the second and third metal layers of the die are configured to operate as an inductor in the semiconductor device. In some implementations, the die further includes a passivation layer. The passivation layer is positioned between the second metal layer and the third metal layer. In some implementations, the second metal layer is positioned between the passivation layer and the set of solder balls. | 09-04-2014 |
20140252544 | DC/ AC DUAL FUNCTION POWER DELIVERY NETWORK (PDN) DECOUPLING CAPACITOR - Some implementations provide a semiconductor device that includes a first substrate, a die coupled to the first substrate, and a set of solder balls coupled to the first substrate. The set of solder balls is configured to provide an electrical connection between the die and a second substrate. The semiconductor device also includes at least one decoupling capacitor coupled to the die through the first substrate. The at least one decoupling capacitor is configured to provide an electrical connection between the die and the second substrate. The at least one decoupling capacitor is coupled to the first substrate such that the at least one decoupling capacitor is positioned between the first substrate and the second substrate. In some implementations, the second substrate is a printed circuit board (PCB). In some implementations, the first substrate is a first package substrate, and the second substrate is a second package substrate. | 09-11-2014 |
20140319652 | HIGH QUALITY FACTOR FILTER IMPLEMENTED IN WAFER LEVEL PACKAGING (WLP) INTEGRATED DEVICE - Some implementations provide an integrated device that includes a capacitor and an inductor. The inductor is electrically coupled to the capacitor. The inductor and the capacitor are configured to operate as a filter for an electrical signal in the integrated device. The inductor includes a first metal layer of a printed circuit board (PCB), a set of solder balls coupled to the PCB, and a second metal layer in a die. In some implementations, the capacitor is located in the die. In some implementations, the capacitor is a surface mounted passive device on the PCB. In some implementations, the first metal layer is a trace on the PCB. In some implementations, the inductor includes a third metal layer in the die. In some implementations, the second metal layer is an under bump metallization (UBM) layer of the die, and the third metal is a redistribution layer of the die. | 10-30-2014 |
20150048480 | INTEGRATED PASSIVE DEVICE (IPD) ON SUBTRATE - Some novel features pertain to a semiconductor device that includes a substrate, a first cavity that traverses the substrate. The first cavity is configured to be occupied by a interconnect material (e.g., solder ball). The substrate also includes a first metal layer coupled to a first side wall of the first cavity. The substrate further includes a first integrated passive device (IPD) on a first surface of the substrate, the first IPD coupled to the first metal layer. In some implementations, the substrate is a glass substrate. In some implementations, the first IPD is one of at least a capacitor, an inductor and/or a resistor. In some implementations, the semiconductor device further includes a second integrated passive device (IPD) on a second surface of the substrate. The second IPD is coupled to the first metal layer. | 02-19-2015 |
20150092314 | CONNECTOR PLACEMENT FOR A SUBSTRATE INTEGRATED WITH A TOROIDAL INDUCTOR - A system includes a first connector coupled to a first surface of a substrate. The first connector enables the system to be electrically coupled to a first device external to the substrate. The system includes a second connector coupled to a second surface of the substrate. The system also includes a plurality of conductive vias extending through the substrate from the first surface to the second surface. The plurality of conductive vias surrounds the first connector and the second connector. The plurality of conductive vias is electrically coupled together to form a toroidal inductor. A first lead of the toroidal inductor is electrically coupled to the first connector. A second lead of the toroidal inductor is electrically coupled to the second connector. | 04-02-2015 |