Patent application number | Description | Published |
20080237029 | Oxidized Barrier Layer - A method and resultant produce of forming barrier layer based on ruthenium tantalum in a via or other vertical interconnect structure through a dielectric layer in a multi-level metallization. The RuTa layer in a RuTa/RuTaN bilayer, which may form discontinuous islands, is actively oxidized, preferably in an oxygen plasma, to thereby bridge the gaps between the islands. Alternatively, ruthenium tantalum oxide is reactive sputtered onto the RuTaN or directly onto the underlying dielectric by plasma sputtering a RuTa target in the presence of oxygen. | 10-02-2008 |
20090053888 | Method of depositing a diffusion barrier layer which provides an improved interconnect - A method of depositing a duffusion barrier layer with overlying conductive layer or fill which lowers resistivity of a semiconductor device interconnect. The lower resistivity is achieved by inducing the formation of alpha tantalum within a tantalum-comprising barrier layer. | 02-26-2009 |
20090233438 | SELF-IONIZED AND INDUCTIVELY-COUPLED PLASMA FOR SPUTTERING AND RESPUTTERING - A magnetron sputter reactor for sputtering deposition materials such as tantalum, tantalum nitride and copper, for example, and its method of use, in which self-ionized plasma (SIP) sputtering and inductively coupled plasma (ICP) sputtering are promoted, either together or alternately, in the same or different chambers. Also, bottom coverage may be thinned or eliminated by ICP resputtering in one chamber and SIP in another. SIP is promoted by a small magnetron having poles of unequal magnetic strength and a high power applied to the target during sputtering. ICP is provided by one or more RF coils which inductively couple RF energy into a plasma. The combined SIP-ICP layers can act as a liner or barrier or seed or nucleation layer for hole. In addition, an RF coil may be sputtered to provide protective material during ICP resputtering. In another chamber an array of auxiliary magnets positioned along sidewalls of a magnetron sputter reactor on a side towards the wafer from the target. The magnetron preferably is a small, strong one having a stronger outer pole of a first magnetic polarity surrounding a weaker outer pole of a second magnetic polarity and rotates about the central axis of the chamber. The auxiliary magnets preferably have the first magnetic polarity to draw the unbalanced magnetic field component toward the wafer. The auxiliary magnets may be either permanent magnets or electromagnets. | 09-17-2009 |
20090308732 | APPARATUS AND METHOD FOR UNIFORM DEPOSITION - Embodiments of the present invention generally relate to an apparatus and method for uniform sputter depositing of materials into the bottom and sidewalls of high aspect ratio features on a substrate. In one embodiment, a sputter deposition system includes a collimator that has apertures having aspect ratios that decrease from a central region of the collimator to a peripheral region of the collimator. In one embodiment, the collimator is coupled to a grounded shield via a bracket member that includes a combination of internally and externally threaded fasteners. In another embodiment, the collimator is integrally attached to a grounded shield. In one embodiment, a method of sputter depositing material includes pulsing the bias on the substrate support between high and low values. | 12-17-2009 |
20100012029 | APPARATUS FOR CONTROLLING RADIAL DISTRIBUTION OF PLASMA ION DENSITY AND ION ENERGY AT A WORKPIECE SURFACE BY MULTI-FREQUENCY RF IMPEDANCE TUNING - In a physical vapor deposition plasma reactor, a multi-frequency impedance controller is coupled between RF ground and one of (a) the bias electrode, (b) the sputter target, the controller providing adjustable impedances at a first set of frequencies, said first set of frequencies including a first set of frequencies to be blocked and a first set of frequencies to be admitted. The first multi-frequency impedance controller includes a set of band pass filters connected in parallel and tuned to said first set of frequencies to be admitted, and a set of notch filters connected in series and tuned to said first set of frequencies to be blocked. | 01-21-2010 |
20100032289 | METHOD FOR ULTRA-UNIFORM SPUTTER DEPOSITION USING SIMULTANEOUS RF AND DC POWER ON TARGET - In a plasma-enhanced physical vapor deposition reactor, uniformity of radial distribution of the deposition rate across the workpiece is enhanced by applying both RF and D.C. power to the target and adjusting the power levels of the RF and D.C. power independently. Further optimization is obtained by adjusting the height of the magnet above the target, adjusting the radius of the orbital motion of the magnet above the target and providing an angle edge surface of the target. | 02-11-2010 |
20100089748 | CONTROL OF EROSION PROFILE ON A DIELECTRIC RF SPUTTER TARGET - The present invention generally includes a sputtering target assembly that may be used in an RF sputtering process. The sputtering target assembly may include a backing plate and a sputtering target. The backing plate may be shaped to have one or more fins that extend from the backing plate towards the sputtering target. The sputtering target may be bonded to the fins of the backing plate. The RF current utilized during a sputtering process will be applied to the sputtering target at the one or more fin locations. The fins may extend from the backing plate at a location that corresponds to a magnetic field produced by a magnetron that may be disposed behind the backing plate. By controlling the location where the RF current is coupled to the sputtering target to be aligned with the magnetic field, the erosion of the sputtering target may be controlled. | 04-15-2010 |
20100096253 | PVD CU SEED OVERHANG RE-SPUTTERING WITH ENHANCED CU IONIZATION - A method and apparatus for depositing metal on a patterned substrate are provided. A metal layer is formed in a physical vapor deposition process having a first energy. A second physical vapor deposition process is performed on the metal layer, using a second energy, wherein deposition interacts with brittle and plastic surface modification processes to form a substantially conformal metal layer on the substrate. | 04-22-2010 |
20100096273 | CU SURFACE PLASMA TREATMENT TO IMPROVE GAPFILL WINDOW - A method and apparatus for selectively controlling deposition rate of conductive material during an electroplating process. Dopants are predominantly incorporated into a conductive seed layer on field regions of a substrate prior to filling openings in the field regions by electroplating. A substrate is positioned in one or more processing chambers, and barrier and conductive seed layers formed. A dopant precursor is provided to the chamber and ionized, with or without voltage bias. The dopant predominantly incorporates into the conductive seed layer on the field regions. Electrical conductivity of the conductive seed layer on the field regions is reduced relative to that of the conductive seed layer in the openings, resulting in low initial deposition rate of metal on the field regions during electroplating, and little or no void formation in the metal deposited in the openings. | 04-22-2010 |
20100108500 | ENCAPSULATED SPUTTERING TARGET - Embodiments of the invention provide encapsulated sputtering targets and methods for preparing such targets prior to a physical vapor deposition (PVD) process. In one embodiment, an encapsulated target for PVD is provided which includes a target layer containing lanthanum disposed on a backing plate and an encapsulation layer containing titanium disposed on or over the target layer. In one example, the target layer contains metallic lanthanum or lanthanum oxide and the encapsulation layer contains titanium. The encapsulation layer may have a thickness within a range from about 1,000 Å to about 2,000 Å. In another embodiment, a method for preparing an encapsulated target prior to a PVD process is provided which includes positioning an encapsulated target within a PVD chamber and exposing the encapsulation layer to a plasma while removing the encapsulation layer and revealing an upper surface of the target layer. | 05-06-2010 |
20100252416 | Sputtering Target for PVD Chamber - Target assemblies and PVD chambers including target assemblies are disclosed. The target assembly includes a target that has a concave shaped target. When used in a PVD chamber, the concave target provides more radially uniform deposition on a substrate disposed in the sputtering chamber. | 10-07-2010 |
20100252417 | HIGH PRESSURE RF-DC SPUTTERING AND METHODS TO IMPROVE FILM UNIFORMITY AND STEP-COVERAGE OF THIS PROCESS - Embodiments of the invention generally provide a processing chamber used to perform a physical vapor deposition (PVD) process and methods of depositing multi-compositional films. The processing chamber may include: an improved RF feed configuration to reduce any standing wave effects; an improved magnetron design to enhance RF plasma uniformity, deposited film composition and thickness uniformity; an improved substrate biasing configuration to improve process control; and an improved process kit design to improve RF field uniformity near the critical surfaces of the substrate. The method includes forming a plasma in a processing region of a chamber using an RF supply coupled to a multi-compositional target, translating a magnetron relative to the multi-compositional target, wherein the magnetron is positioned in a first position relative to a center point of the multi-compositional target while the magnetron is translating and the plasma is formed, and depositing a multi-compositional film on a substrate in the chamber. | 10-07-2010 |
20110018073 | SUBSTRATE DEVICE HAVING A TUNED WORK FUNCTION AND METHODS OF FORMING THEREOF - Substrate devices having tuned work functions and methods of forming thereof are provided. In some embodiments, forming devices on substrates may include depositing a dielectric layer atop a substrate having a conductivity well; depositing a work function layer comprising titanium aluminum or titanium aluminum nitride having a first nitrogen composition atop the dielectric layer; etching the work function layer to selectively remove at least a portion of the work function layer from atop the dielectric layer; depositing a layer comprising titanium aluminum or titanium aluminum nitride having a second nitrogen composition atop the work function layer and the substrate, wherein at least one of the work function layer or the layer comprises nitrogen; etching the layer and the dielectric layer to selectively remove a portion of the layer and the dielectric layer from atop the substrate; and annealing the substrate at a temperature less than about 1500 degrees Celsius. | 01-27-2011 |
20110220488 | Apparatus and Method for Improved Darkspace Gap Design in RF Sputtering Chamber - Improved designs of target assemblies and darkspace shields are disclosed. Methods of improving darkspace gap in sputtering chambers and sputtering chambers having an improved darkspace gap are also disclosed. Disclosed is a target assembly having a substantially coplanar backing plate and a target are vertically spaced from the darkspace shield. | 09-15-2011 |
20110278165 | PROCESS KIT SHIELD FOR IMPROVED PARTICLE REDUCTION - Apparatus for improved particle reduction are provided herein. In some embodiments, an apparatus may include a process kit shield comprising a one-piece metal body having an upper portion and a lower portion and having an opening disposed through the one-piece metal body, wherein the upper portion includes an opening-facing surface configured to be disposed about and spaced apart from a target of a physical vapor deposition chamber and wherein the opening-facing surface is configured to limit particle deposition on an upper surface of the upper portion of the one-piece metal body during sputtering of a target material from the target of the physical vapor deposition chamber. | 11-17-2011 |
20110298062 | METAL GATE STRUCTURES AND METHODS FOR FORMING THEREOF - Metal gate structures and methods for forming thereof are provided herein. In some embodiments, a method for forming a metal gate structure on a substrate having a feature formed in a high k dielectric layer may include depositing a first layer within the feature atop the dielectric layer; depositing a second layer comprising cobalt or nickel within the feature atop the first layer; and depositing a third layer comprising a metal within the feature atop the second layer to fill the feature, wherein at least one of the first or second layers forms a wetting layer to form a nucleation layer for a subsequently deposited layer, wherein one of the first, second, or third layers forms a work function layer, and wherein the third layer forms a gate electrode. | 12-08-2011 |
20110303960 | LOW RESISTIVITY TUNGSTEN PVD WITH ENHANCED IONIZATION AND RF POWER COUPLING - Embodiments described herein provide a semiconductor device and methods and apparatuses of forming the same. The semiconductor device includes a substrate having a source and drain region and a gate electrode stack on the substrate between the source and drain regions. The gate electrode stack includes a conductive film layer on a gate dielectric layer, a refractory metal nitride film layer on the conductive film layer, a silicon-containing film layer on the refractory metal nitride film layer, and a tungsten film layer on the silicon-containing film layer. In one embodiment, the method includes positioning a substrate within a processing chamber, wherein the substrate includes a source and drain region, a gate dielectric layer between the source and drain regions, and a conductive film layer on the gate dielectric layer. The method also includes depositing a refractory metal nitride film layer on the conductive film layer, depositing a silicon-containing film layer on the refractory metal nitride film layer, and depositing a tungsten film layer on the silicon-containing film layer. | 12-15-2011 |
20110306200 | METHODS FOR FORMING INTERCONNECT STRUCTURES - Methods for forming interconnect structures are provided herein. In some embodiments, a method for forming an interconnect on a substrate may include depositing a material atop an upper surface of the substrate and atop one or more surfaces of a feature disposed in the substrate by a first deposition process that deposits the material at a faster rate on the upper surface than on a bottom surface of the feature; depositing the material atop the upper surface of the substrate and atop one or more surfaces of the feature by a second deposition process that deposits the material at a greater rate on the bottom surface of the feature than on the upper surface of the substrate; and heating the deposited material to draw the deposited material towards the bottom surface of the feature to at least partially fill the feature with the deposited material. | 12-15-2011 |
20110311735 | MAGNETRON DESIGN FOR RF/DC PHYSICAL VAPOR DEPOSITION - Methods and apparatus to improve target life and deposition uniformity in PVD chambers are provided herein. In some embodiments, a magnetron assembly includes a shunt plate having a central axis, the shunt plate rotatable about the central axis, a first open loop magnetic pole arc coupled to the shunt plate at a first radius from the central axis, and a second open loop magnetic pole arc coupled the shunt plate at a first distance from the first open loop magnetic pole arc, wherein at least one of the first radius varies along the first open loop magnetic pole arc or the first distance varies along the second open loop magnetic pole arc. In some embodiments, a first polarity of the first open loop magnetic pole arc opposes a second polarity of the second open loop magnetic pole arc. | 12-22-2011 |
20120024229 | CONTROL OF PLASMA PROFILE USING MAGNETIC NULL ARRANGEMENT BY AUXILIARY MAGNETS - Magnetrons for use in physical vapor deposition (PVD) chambers and methods of use thereof are provided herein. In some embodiments, an apparatus may include a support member having an axis of rotation; a plurality of first magnets coupled to the support member on a first side of the axis of rotation and having a first polarity oriented in a first direction perpendicular to the support member; and a second magnet coupled to the support member on a second side of the axis of rotation opposite the first side and having a second polarity oriented in a second direction opposite the first direction. In some embodiments, the apparatus is capable of forming a magnetic field including one or more magnetic nulls that modulate local plasma uniformity in a physical vapor deposition (PVD) chamber. | 02-02-2012 |
20120027954 | MAGNET FOR PHYSICAL VAPOR DEPOSITION PROCESSES TO PRODUCE THIN FILMS HAVING LOW RESISTIVITY AND NON-UNIFORMITY - Methods and apparatus for depositing thin films having high thickness uniformity and low resistivity are provided herein. In some embodiments, a magnetron assembly includes a shunt plate, the shunt plate rotatable about an axis, an inner closed loop magnetic pole coupled to the shunt plate, and an outer closed loop magnetic pole coupled the shunt plate, wherein an unbalance ratio of a magnetic field strength of the outer closed loop magnetic pole to a magnetic field strength of the inner closed loop magnetic pole is less than about 1. In some embodiments, the ratio is about 0.57. In some embodiments, the shunt plate and the outer close loop magnetic pole have a cardioid shape. A method utilizing RF and DC power in combination with the inventive magnetron assembly is also disclosed. | 02-02-2012 |
20120138457 | ENCAPSULATED SPUTTERING TARGET - Embodiments of the invention provide encapsulated sputtering targets for physical vapor deposition. In one embodiment, an encapsulated target contains a target layer containing a first metal or an oxide of the first metal disposed over a backing plate, an adhesion interlayer disposed between the target layer and the backing plate, and an encapsulation layer containing a second metal or an oxide of the second metal disposed over the target layer and an annular sidewall of the backing plate. The target layer is encapsulated by the backing plate and the encapsulation layer and the first metal is different than the second metal. In some examples, the first metal is lanthanum or lithium and the target layer contains metallic lanthanum, lanthanum oxide, or metallic lithium. In other examples, the second metal is titanium or aluminum and the encapsulation layer contains metallic titanium, titanium oxide, metallic aluminum, or aluminum oxide. | 06-07-2012 |
20120181166 | PVD PROCESS WITH SYNCHRONIZED PROCESS PARAMETERS AND MAGNET POSITION - Embodiments of the present invention generally relate to methods for physical vapor deposition processes. The methods generally include synchronizing process chamber conditions with the position of a magnetron. As the magnetron is scanned over a first area of a target, the conditions within the chamber are adjusted to a first set of predetermined process conditions. As the magnetron is subsequently scanned over a second area of the target, the conditions within the chamber are adjusted to a second set of predetermined process conditions different the first set. The target may be divided into more than two areas. By correlating the position of the magnetron with different sets of process conditions, film uniformity can be improved by reducing center-to-edge non-uniformities, such as re-sputter rates which may be higher when the magnetron is near the edge of the target. | 07-19-2012 |
20130199925 | HIGH DENSITY TiN RF/DC PVD DEPOSITION WITH STRESS TUNING - Methods for depositing a layer on a substrate are provided herein. In some embodiments, a method of depositing a metal-containing layer on a substrate in a physical vapor deposition (PVD) chamber may include applying RF power at a VHF frequency to a target comprising a metal disposed in the PVD chamber above the substrate to form a plasma from a plasma-forming gas; optionally applying DC power to the target; sputtering metal atoms from the target using the plasma while maintaining a first pressure in the PVD chamber sufficient to ionize a predominant portion of the sputtered metal atoms; and controlling the potential on the substrate to be the same polarity as the ionized metal atoms to deposit a metal-containing layer on the substrate. | 08-08-2013 |
20130285065 | PVD BUFFER LAYERS FOR LED FABRICATION - Fabrication of gallium nitride-based light devices with physical vapor deposition (PVD)-formed aluminum nitride buffer layers is described. Process conditions for a PVD AlN buffer layer are also described. Substrate pretreatments for a PVD aluminum nitride buffer layer are also described. In an example, a method of fabricating a buffer layer above a substrate involves pre-treating a surface of a substrate. The method also involves, subsequently, reactive sputtering an aluminum nitride (AlN) layer on the surface of the substrate from an aluminum-containing target housed in a physical vapor deposition (PVD) chamber with a nitrogen-based gas or plasma. | 10-31-2013 |
20130296158 | PVD ALN FILM WITH OXYGEN DOPING FOR A LOW ETCH RATE HARDMASK FILM - The present invention generally relates to a doped aluminum nitride hardmask and a method of making a doped aluminum nitride hardmask. By adding a small amount of dopant, such as oxygen, when forming the aluminum nitride hardmask, the wet etch rate of the hardmask can be significantly reduced. Additionally, due to the presence of the dopant, the grain size of the hardmask is reduced compared to a non-doped aluminum nitride hardmask. The reduced grain size leads to smoother features in the hardmask which leads to more precise etching of the underlying layer when utilizing the hardmask. | 11-07-2013 |
20130330920 | METHOD AND APPARATUS FOR SUBSTRATE PRECLEAN WITH HYDROGEN CONTAINING HIGH FREQUENCY RF PLASMA - A high-frequency, hydrogen-based radio-frequency (RF) plasma is used to reduce a metal oxide and other contaminant disposed in an aperture that is formed in an ultra-low k dielectric material. Because the frequency of the plasma is at least about 40 MHz and the primary gas in the plasma is hydrogen, metal oxide can be advantageously removed without damaging the dielectric material. | 12-12-2013 |
20140042016 | LOW RESISTIVITY TUNGSTEN PVD WITH ENHANCED IONIZATION AND RF POWER COUPLING - Embodiments described herein provide a semiconductor device and methods and apparatuses of forming the same. The semiconductor device includes a substrate having a source and drain region and a gate electrode stack on the substrate between the source and drain regions. In one embodiment, the method includes positioning a substrate within a processing chamber, wherein the substrate includes a source and drain region, a gate dielectric layer between the source and drain regions, and a conductive film layer on the gate dielectric layer. The method also includes depositing a refractory metal nitride film layer on the conductive film layer, depositing a silicon-containing film layer on the refractory metal nitride film layer, and depositing a tungsten film layer on the silicon-containing film layer. | 02-13-2014 |
20140110248 | CHAMBER PASTING METHOD IN A PVD CHAMBER FOR REACTIVE RE-SPUTTERING DIELECTRIC MATERIAL - According to embodiments provide a method for forming dielectric films using physical vapor deposition chamber. Particularly, a pasting process may be performed to apply a conductive coating over inner surfaces of the physical vapor deposition chamber. The pasting process may be performed under adjusted process parameters, such as increased spacing and/or increased chamber pressure. The adjusted parameters allow the conductive coating to be formed more efficiently and effectively. | 04-24-2014 |
20140238843 | Variable radius dual magnetron - A dual magnetron particularly useful for RF plasma sputtering includes a radially stationary open-loop magnetron comprising opposed magnetic poles and rotating about a central axis to scan an outer region of a sputter target and a radially movable open-loop magnetron comprising opposed magnetic poles and rotating together with the stationary magnetron. During processing, the movable magnetron is radially positioned in the outer region with an open end abutting an open end of the stationary magnetron to form a single open-loop magnetron. During cleaning, part of the movable magnetron is moved radially inwardly to scan and clean an inner region of the target not scanned by the stationary magnetron. The movable magnetron can be mounted on an arm pivoting about an axis at periphery of a rotating disk-shaped plate mounting the stationary magnetron so the arm centrifugally moves between radial positions dependent upon the rotation rate or direction. | 08-28-2014 |
20140251217 | TARGET FOR PVD SPUTTERING SYSTEM - Embodiments of apparatus for physical vapor deposition are provided. In some embodiments, a target assembly for use in a substrate processing system to process a substrate includes a plate having a first side and an opposing second side, wherein the second side comprises a target supporting surface extending from the second side in a direction normal to the second side, wherein the target supporting surface has a first diameter and is bounded by a first edge; and a target having a first side bonded to the target supporting surface, wherein a diameter of the target is greater than the first diameter of the target supporting surface. | 09-11-2014 |
20140305802 | SELF-IONIZED AND INDUCTIVELY-COUPLED PLASMA FOR SPUTTERING AND RESPUTTERING - A magnetron sputter reactor for sputtering deposition materials such as tantalum, tantalum nitride and copper, for example, and its method of use, in which self-ionized plasma (SIP) sputtering and inductively coupled plasma (ICP) sputtering are promoted, either together or alternately, in the same or different chambers. Also, bottom coverage may be thinned or eliminated by ICP resputtering in one chamber and SIP in another. SIP is promoted by a small magnetron having poles of unequal magnetic strength and a high power applied to the target during sputtering. ICP is provided by one or more RF coils which inductively couple RF energy into a plasma. The combined SIP-ICP layers can act as a liner or barrier or seed or nucleation layer for hole. In addition, an RF coil may be sputtered to provide protective material during ICP resputtering. In another chamber an array of auxiliary magnets positioned along sidewalls of a magnetron sputter reactor on a side towards the wafer from the target. The magnetron preferably is a small, strong one having a stronger outer pole of a first magnetic polarity surrounding a weaker outer pole of a second magnetic polarity and rotates about the central axis of the chamber. The auxiliary magnets preferably have the first magnetic polarity to draw the unbalanced magnetic field component toward the wafer. The auxiliary magnets may be either permanent magnets or electromagnets. | 10-16-2014 |
20150075980 | EXTENDED DARK SPACE SHIELD - Apparatus for physical vapor deposition are provided. In some embodiments, an apparatus for use in a physical vapor deposition substrate processing chamber includes a process shield having a central opening passing through a body of the process shield and defining a processing volume of the substrate processing chamber, wherein the process shield comprises an annular dark space shield fabricated from a ceramic material and an annular ground shield fabricated from a conductive material, and wherein a ratio of a length of the annular dark space shield to a length of the annular ground shield is about 2:1 to about 1.6:1. | 03-19-2015 |