Patent application number | Description | Published |
20090272881 | Apparatus, method, and system providing pixel having increased fill factor - A method, apparatus, and system providing a pixel having increased fill factor by removing the row select transistor. A reset transistor in the pixel is connected to a column line, and the column line is used alternatively as a pixel readout line and as a voltage supply line for resetting a storage region in the pixel through the resent transistor. | 11-05-2009 |
20090302323 | Method and apparatus for providing a low-level interconnect section in an imager device - Imager pixels with low-level interconnect sections, methods of assembling imager pixels with low-level interconnect sections, and systems containing imager pixels with low-level interconnect sections. Imager pixels are formed such that specific interconnections between transistors and other components of an imager array are removed from one or more upper level metallization sections and placed on a low-level interconnect section closer to the photodetector, such that one upper metallization section is eliminated. | 12-10-2009 |
20100079646 | Vertical 4-way shared pixel in a single column with internal reset and no row select - A method and apparatus for reducing space and pixel circuit complexity by using a 4-way shared vertically aligned pixels in a same column. The at least four pixels in the pixel circuit share a reset transistor and a source follower transistor, can have a plurality of same colored pixels and a plurality of colors, but do not include a row select transistor. | 04-01-2010 |
20110310278 | SYSTEMS AND METHODS FOR ADAPTIVE CONTROL AND DYNAMIC RANGE EXTENSION OF IMAGE SENSORS - Systems and methods are provided for obtaining adaptive exposure control and dynamic range extension of image sensors. In some embodiments, an image sensor of an image system can include a pixel array with one or more clear pixels. The image system can separately control the amount of time that pixels in different lines of the pixel array are exposed to light. As a result, the image system can adjust the exposure times to prevent over-saturation of the clear pixels, while also allowing color pixels of the pixel array to be exposed to light for a longer period of time. In some embodiments, the dynamic range of the image system can be extended through a reconstruction and interpolation process. For example, a signal reconstruction module can extend the dynamic range of one or more green pixels by combining signals associated with green pixels in different lines of the pixel array. | 12-22-2011 |
20120091317 | IMAGING SYSTEMS AND METHODS INCLUDING PIXEL ARRAYS WITH REDUCED NUMBERS OF METAL LINES AND CONTROL SIGNALS - This is generally directed to systems and methods for reduced metal lines and control signals in an imaging system. For example, in some embodiments a pixel cell of an imaging system can operate without a row select transistor, and therefore can operate without a row select metal control line. As another example, in some embodiments a pixel cell can share its reset transistor control line with a transfer transistor control line of another pixel cell. In this manner, an imaging system can be created that averages a single metal line per pixel cell. In some embodiments, operation of such reduced-metal line imaging systems can use modified timing schemes of control signals. | 04-19-2012 |
20120097842 | IMAGING PIXELS WITH SHIELDED FLOATING DIFFUSIONS - An imaging system may include imaging pixels. Each imaging pixel may include floating diffusion metal lines associated with a floating diffusion node in that imaging pixel, pixel output metal lines associated with a pixel output, and additional metal lines. The floating diffusion metal lines node may be at least partially surrounded by the pixel output metal lines. Because the floating diffusion metal lines are at least partially surrounded by the pixel output metal lines, the parasitic capacitance between the floating diffusion metal lines and the additional metal lines may be reduced. A source-follower transistor in each imaging pixel may provide a gain between the floating diffusion metal lines and the pixel output metal lines. Due to the Miller effect, the gain induced by the source-follower transistor may reduce the parasitic capacitance between the floating diffusion metal lines and the pixel output metal lines. | 04-26-2012 |
20120188424 | COMMON ELEMENT PIXEL ARCHITECTURE (CEPA) FOR FAST SPEED READOUT - The present invention relates to a common element pixel architecture (CEPA) imager. The CEPA includes a first column of pixels and a second column of pixels. The CEPA also includes a first column line and a second column line. A first group of pixels is arranged including pixels from the first column and the second column coupled to the first column line. A second group of pixels is arranged including other pixels from the first column and the second column coupled to the second column line. | 07-26-2012 |
20120188430 | IMAGER PIXEL ARCHITECTURE WITH ENHANCED COLUMN DISCHARGE AND METHOD OF OPERATION - A pixel circuit includes a photosensor and a floating diffusion node. A circuit is coupled to the floating diffusion node, for selectively providing a pixel output signal to a column line. A reset circuit, which resets the floating diffusion node, is configured to be activated by the column line. A pullup circuit is included for controlling the reset circuit through a signal on the column line. A discharge circuit, which is separate from the reset circuit, is used for discharging the pixel output signal on the column line. The discharge circuit includes a transistor having a first source/drain terminal coupled to the column line and a second source/drain terminal coupled to a fixed voltage level. The gate of the transistor activates the discharging of the column line. | 07-26-2012 |
20120241591 | PUMPED PINNED PHOTODIODE PIXEL ARRAY - The present invention relates to a pumped pixel that includes a first photo-diode accumulating charge in response to impinging photons, a second photo-diode and a floating diffusion positioned on a substrate of the pixel. The pixel also includes a charge barrier positioned on the substrate between the first photo-diode and the second photo-diode, where the charge barrier temporarily blocks charge transfer between the first photo-diode and the second photo-diode. Also included is a pump gate positioned on the substrate adjacent to the charge barrier. The pump gate pumps the accumulated charge from the first photo-diode to the second photo-diode through the charge barrier in response to a pump voltage applied by a controller. Also included is a transfer gate positioned on the substrate between the second photo-diode and the floating diffusion. The transfer gate transfers the pumped charge from the second photo-diode to the floating diffusion in response to a transfer voltage applied by a controller. | 09-27-2012 |
20120274744 | STRUCTURED LIGHT IMAGING SYSTEM - Structured light imaging method and systems are described. An imaging method generates a stream of light pulses, converts the stream after reflection by a scene to charge, stores charge converted during the light pulses to a first storage element, and stores charge converted between light pulses to a second storage element. A structured light image system includes an illumination source that generates a stream of light pulses and an image sensor. The image sensor includes a photodiode, first and second storage elements, first and second switches, and a controller that synchronizes the image sensor to the illumination source and actuates the first and second switches to couple the first storage element to the photodiode to store charge converted during the light pulses and to couple the second storage element to the photodiode to store charge converted between the light pulses. | 11-01-2012 |
20130128089 | VERTICAL 4-WAY SHARED PIXEL IN A SINGLE COLUMN WITH INTERNAL RESET AND NO ROW SELECT - A method and apparatus for reducing space and pixel circuit complexity by using a 4-way shared vertically aligned pixels in a same column. The at least four pixels in the pixel circuit share a reset transistor and a source follower transistor, can have a plurality of same colored pixels and a plurality of colors, but do not include a row select transistor. | 05-23-2013 |
20130308021 | SYSTEMS AND METHODS FOR ADAPTIVE CONTROL AND DYNAMIC RANGE EXTENSION OF IMAGE SENSORS - Systems and methods are provided for obtaining adaptive exposure control and dynamic range extension of image sensors. In some embodiments, an image sensor of an image system can include a pixel array with one or more clear pixels. The image system can separately control the amount of time that pixels in different lines of the pixel array are exposed to light. As a result, the image system can adjust the exposure times to prevent over-saturation of the clear pixels, while also allowing color pixels of the pixel array to be exposed to light for a longer period of time. In some embodiments, the dynamic range of the image system can be extended through a reconstruction and interpolation process. For example, a signal reconstruction module can extend the dynamic range of one or more green pixels by combining signals associated with green pixels in different lines of the pixel array. | 11-21-2013 |
20140146209 | PUMPED PINNED PHOTODIODE PIXEL ARRAY - The present invention relates to a pumped pixel that includes a first photo-diode accumulating charge in response to impinging photons, a second photo-diode, and a floating diffusion positioned on a substrate. The pixel also includes a charge barrier positioned on the substrate between the first photo-diode and the second photo-diode, where the charge harrier temporarily blocks charge transfer between the first photo-diode and the second photo-diode. A pump gate may also be formed on the substrate adjacent to the charge barrier. The pump gate pumps the accumulated charge from the first photo-diode to the second photo-diode through the charge barrier. Also included is a transfer gate positioned on the substrate between the second photo-diode and the floating diffusion. The transfer gate serves to transfer the pumped charge from, the second photo-diode to the floating diffusion. | 05-29-2014 |
20140247378 | EXPOSURE CONTROL FOR IMAGE SENSORS - A method of operating an image sensor. Charge accumulated in a photodiode during a first sub-exposure may be selectively stored in a storage node responsive to a first control signal. Charge accumulated in the photodiode during a first reset period may be selectively discarded responsive to a second control signal. Charge accumulated in the photodiode during a second sub-exposure may be selectively stored responsive to the first control signal. Charge stored in the storage node from the first and second sub-exposures may be transferred to a floating diffusion node responsive to a third control signal. | 09-04-2014 |
20140252201 | CHARGE TRANSFER IN IMAGE SENSORS - Apparatuses and methods for charge transfer in image sensors are disclosed. One example of an image sensor pixel may include a first charge storage node and a second charge storage node. A transfer circuit may be coupled between the first and second charge storage nodes, and the transfer circuit may have a first region proximate the first charge storage node and configured to have a first potential. The transfer circuit may also have a second region proximate the second charge storage node configured to have a second, higher potential. An input node may be configured to control the first and second potentials based on a transfer signal provided to the input node. | 09-11-2014 |
20140253768 | IMAGE SENSOR WITH REDUCED BLOOMING - An image sensor for an electronic device. The image sensor includes a first light sensitive element for collecting charge and having a first saturation value and a well surrounding at least a portion of the first light sensitive element and having a first doping concentration. The image sensor further includes a bridge region defined in the well and in communication with the first light sensitive element and having a second doping concentration and a blooming node in communication with the bridge region and a voltage source. The second doping concentration is less than the first doping concentration and when light sensitive element collects sufficient charge to reach the first saturation value, additional charge received by the light sensitive element travels to the blooming node via the bridge region. | 09-11-2014 |
20140267850 | Image Sensor with In-Pixel Depth Sensing - An imaging area in an image sensor includes a plurality of photo detectors. A light shield is disposed over a portion of two photo detectors to partially block light incident on the two photo detectors. The two photo detectors and the light shield combine to form an asymmetrical pixel pair. The two photo detectors in the asymmetrical pixel pair can be two adjacent photo detectors. The light shield can be disposed over contiguous portions of the two adjacent photo detectors. A color filter array can be disposed over the plurality of photo detectors. The filter elements disposed over the two photo detectors can filter light representing the same color or different colors. | 09-18-2014 |
20150035028 | Image Sensor with Buried Light Shield and Vertical Gate - A pixel in an image sensor can include a photodetector and a storage region disposed in one substrate, or a photodetector disposed in one substrate and a storage region in another substrate. A buried light shield is disposed between the photodetector and the storage region. A sense region, such as a floating diffusion, can be adjacent to the storage region, with the buried light shield disposed between the photodetector and the storage and sense regions. When the photodetector and the storage region are disposed in separate substrates, a vertical gate can be formed through the buried light shield and used to initiate the transfer of charge from the photodetector and the storage region. A transfer channel formed adjacent to, or around the vertical gate provides a channel for the charge to transfer from the photodetector to the storage region. | 02-05-2015 |