Patent application number | Description | Published |
20100266281 | Allocating Demand According To Demand Weight - According to one embodiment, allocating demand includes receiving a demand graph that describes demands of a network. One or more weights are calculated for each demand. The demands are allocated according to the weights of the demands to optimize optical line card sharing. | 10-21-2010 |
20100329120 | Determining Disjoint Paths With An Optimized Number Of Regenerators - According to particular embodiments, determining disjoint paths includes receiving a graph representing a network comprising nodes and links. The graph is transformed such that the number of intermediate nodes of a path indicates the number of regenerators for the path. A set of seed paths from a source node to a destination node of the transformed graph is generated. For each seed path, a shortest path from the source node to the destination node is determined to yield one or more pairs of disjoint paths from the source node to the destination node. An optimized pair of disjoint paths is selected, where the optimized pair of disjoint paths has an optimized number of regenerators. | 12-30-2010 |
20110080846 | Determining Paths In A Network With Asymmetric Switches - According to particular embodiments, determining paths in a network with asymmetric switches includes receiving a graph representing the network. Each asymmetric switch has defined degree connectivity between one or more pairs of degrees of the asymmetric switch. The graph is transformed to yield a transformed graph that accounts for the asymmetric switches. A routing process is applied to the transformed graph to yield one or more paths through the network. | 04-07-2011 |
20110167183 | Minimizing Interconnections In A Multi-Shelf Switching System - In certain embodiments, minimizing interconnections in a multi-shelf switching system includes receiving a map describing the switching system, where the switching system comprises shelves and input/output (I/O) points. The map is transformed to yield a graph comprising nodes and edges. A node represents an I/O point, and a node weight represents a number of interface cards of the I/O point represented by the node. An edge between a node pair represents traffic demand between the I/O points represented by the node pair, and an edge weight represents the amount of the traffic demand represented by the edge. The graph is partitioned to yield a groups that minimize interconnection traffic among the shelves, where each group represents a shelf of the multi-shelf switching system. | 07-07-2011 |
20110206374 | System and Method for Demand Aggregation in Optical Networks Employing Shared Ring Protection - In accordance with embodiments of the present disclosure, a method for demand aggregation is provided. The method may include routing demands in a ring network such that a length for each routed demand does not exceed a route length maximum, and a load imbalance at each node in the ring network is minimized. The method may also include maximizing optical line card sharing by assigning routed demands sharing common ends to the same wavelength. | 08-25-2011 |
20110242995 | SYSTEMS AND METHODS FOR MULTI-DOMAIN ROUTING - Systems and methods for multi-domain routing are provided. In some embodiments, a method for determining a path calculation from a source node to a destination node over a multi-domain network is provided. The method may include steps for receiving a predetermined sequence of domains for communicating information from the source node to the destination node, determining a link type for each of a plurality of links in the predetermined sequence of domains, modifying the link type of one or more of the plurality of links such that the plurality of links are unidirectional links towards a destination node, and determining a path along the predetermined sequence of domains based on the modified plurality of links. | 10-06-2011 |
20110243030 | SYSTEMS AND METHODS FOR DETERMINING PROTECTION PATHS IN A MULTI-DOMAIN NETWORK - Systems and methods for determining multiple paths in a multi-domain network are provided. In some embodiment, a method for determining multiple paths in a network is provided. The method may include determining a first path between a source node and a destination node and determining a second path disjoint from the first path. In some embodiments, to determine the second path includes determining which ingress nodes are available in a domain that includes the destination node, where the available ingress nodes are not part of the first path, and implementing a disjoint path algorithm for each of the available ingress nodes. To determine the first path includes implementing forward path calculations. | 10-06-2011 |
20120093507 | Dynamic Circuit Adjustment - A system and method are provided for dynamically reconfiguring an optical circuit between a first node and a second node of a communication network. The system and method may include establishing a scheduling window for receiving a plurality of optical traffic demands, classifying the plurality of optical traffic demands into at least a set of bandwidth adjustable demands and a set of fixed bandwidth demands, provisioning a first set of provisioned wavelengths from the plurality of wavelengths to carry the set of fixed bandwidth demands during the scheduling window, allocating the bandwidth remaining on the first set of provisioned wavelengths to the set of bandwidth adjustable demands, and if necessary, provisioning a second set of provisioned wavelengths from the plurality of wavelengths to carry the bandwidth required by the set of bandwidth adjustable demands that could not be allocated to the first set of provisioned wavelengths. | 04-19-2012 |
20120117269 | SYSTEMS AND METHODS FOR MULTI-LAYER TRAFFIC GROOMING - A method may include constructing an auxiliary graph for a network comprising a plurality of network elements, the network elements having an Internet Protocol layer, a lower layer, and a wavelength layer, the auxiliary graph including a plurality of directed edges, the plurality of directed edges indicative of connectivity of components of the plurality of network elements. The method may further include: (i) deleting directed edges from the auxiliary graph whose available bandwidth is lower than the required bandwidth of a selected demand; (ii) finding a path for the demand on the auxiliary graph via remaining directed edges; (iii) deleting at least one directed edge of the auxiliary graph on the wavelength layer along the path; (iv) adding lower layer lightpath edges to the auxiliary graph for a lower layer lightpath for the path; and (v) converting lower layer lightpaths to Internet Protocol lightpaths if a conversion condition is satisfied. | 05-10-2012 |
20120237200 | METHOD AND SYSTEM FOR INCREASING TRANSPONDER SHARING FOR MESH RESTORATION IN A COMMUNICATION NETWORK - In accordance with embodiments of the present disclosure, a method may include for each particular working demand in a communication network, calculating a dedicated backup path for a working path of the particular working demand such that each particular backup path does not include links present in the working path. The method may also include, for each particular working demand: (i) assigning to the backup path a wavelength associated with the particular working demand; and (ii) assign to the backup path a transponder at each of the source and destination of the backup path associated with the wavelength; such that the backup path for at least one particular working demand is assigned a transponder that is also assigned to the backup path for at least one other particular working demand. | 09-20-2012 |
20120263455 | METHOD AND SYSTEM FOR CALCULATING SPECTRUM GRANULARITY IN FLEXIBLE GRID OPTICAL NETWORKS - In accordance with embodiments of the present disclosure, a method may include determining individual spectrum requirements for each of a plurality of signals to be communicated in an optical network, wherein a first signal of the plurality of signals has a first spectrum requirement and a second signal of the plurality of signals has a second spectrum requirement. The method may also include calculating a minimum spectrum granularity based on the individual spectrum requirements. The method may further include assigning each particular signal a channel spectrum equal to an integer multiple of the minimum spectrum granularity. | 10-18-2012 |
20120328286 | System and Method for Calculating Utilization Entropy - A system and method are provided for monitoring traffic in a network comprising a plurality of links, wherein each of the plurality of links comprises a plurality of neighboring pairs of slots. The system and method may include identifying a first usage status and a second usage status, calculating a utilization entropy value based at least on the difference between the first and second usage status, iteratively calculating a set of utilization entropy values for a portion of the network, and calculating an overall utilization entropy value for the portion of the network under analysis based at least on a statistical analysis of the set of utilization entropy values. | 12-27-2012 |
20130011138 | FLEXIBLE MULTI-BAND MULTI-TRAFFIC OPTICAL OFDM NETWORK - In accordance with some embodiments of the present disclosure a method for receiving and processing an optical orthogonal frequency-division multiplexed signal containing a plurality of traffics comprises receiving the optical orthogonal frequency-division multiplexed signal. The method further comprises down-converting the optical orthogonal frequency-division multiplexed signal into the electrical domain to obtain an electrical signal; filtering the electrical signal to obtain a first portion of the electrical signal containing a first of the plurality of traffics and preprocessing the first portion of the electrical signal in a first parallel preprocessor; filtering the electrical signal to obtain a second portion of the electrical signal containing a second of the plurality of traffics and preprocessing the second portion of the electrical signal in a second parallel preprocessor; and combining the preprocessed first and second portions of the electrical signal to yield a combined electrical signal and demodulating the combined electrical signal. | 01-10-2013 |
20130089317 | METHOD AND SYSTEM FOR HYBRID MULTI-LAYER MESH RESTORATION IN A COMMUNICATION NETWORK - In accordance with embodiments of the present disclosure, a method may include sorting potential optical layer link failures in a network in an increasing order of failed traffic amount. The method may further include, for each potential optical link failure in increasing order of failed traffic amount: determining the additional higher layer link capacity required on existing higher layer links associated with the potential optical link failure using higher layer restoration of the potential optical link failure; determining the additional optical layer capacity required for restoring the existing higher layer links associated with the potential optical link failure using optical layer restoration; and selecting one of the higher layer and the optical layer as a restoration layer for restoration of the existing higher layer links associated with the potential optical link failure based on the determined additional higher layer link capacity and the determined additional optical layer capacity. | 04-11-2013 |
20130251368 | WAVELENGTH REASSIGNMENT IN OPTICAL NETWORKS - An optical network for reassigning a carrier wavelength of an optical signal may include first and second optical nodes. The first optical node may be configured to transmit an optical signal along an optical path. The first optical node may also be configured to tune a carrier wavelength of the optical signal from a first wavelength to a second wavelength, according to a continuous function, to reassign the carrier wavelength of the optical signal. The second optical node may be configured to receive the optical signal and may include a feedback loop configured to adjust a wavelength of a reference optical signal to approximate the carrier wavelength of the optical signal. | 09-26-2013 |
20130272693 | SYSTEM AND METHOD FOR SHARED MESH RESTORATION IN OPTICAL NETWORKS - A method for shared mesh restoration includes configuring a switch to allow sharing of a plurality of backup line cards across a plurality of node degrees associated with a reconfigurable optical add/drop multiplexer (ROADM). The switch is communicatively coupled to the ROADM. The method further includes configuring a number of backup line cards coupled to the switch. The number of backup line cards is based on determining a number of active backup lightpaths for each of a plurality of network failures associated with each of the plurality of node degrees of the ROADM, identifying which node degree and failure has the largest number of active backup lightpaths for all of the plurality of node degrees of the ROADM and for each of the plurality of network failures, and determining the number of backup line cards to configure based on the identified largest number of active backup lightpaths. | 10-17-2013 |
20130272710 | DEFRAGMENTATION OF OPTICAL NETWORKS - According to an aspect of an embodiment, a method of spectrum defragmentation in an optical network may include assigning an optical signal within an optical network to a first frequency slot that spans a first portion of an optical spectrum of the optical network. The method may also include constructing a frequency slot dependency map based on the assignation of the optical signal to the frequency slot. The method may also include reassigning, as a result of an optical signal departure event, the optical signal to a second frequency slot based on the frequency slot dependency map. The second frequency slot may span a second portion of the optical spectrum of the optical network. | 10-17-2013 |
20140052419 | PROBABILITY-BASED REGENERATOR SITE ANALYSIS - An optical network analysis tool includes a computer-readable storage medium having computer-readable instructions stored thereon. The computer-readable instructions are executable by a computing device to perform operations. The operations include generating a simulated network that models an optical network. The simulated network includes regenerator candidate sites. The operations may also include conducting an analysis of the optical network. The analysis includes introducing a multiple signals transmitted between source/destination pairs and recording a number of times each of the regenerator candidate sites are selected as a regenerator site while applying each of a set of data traffic conditions in the simulated network. The operations may also include statistically analyzing the number of times each of the regenerator candidate sites is selected to generate statistically analyzed information and presenting the statistically analyzed information. | 02-20-2014 |
20140099102 | SYSTEMS AND METHODS FOR STATISTICAL SHARING IN OPTICAL COMMUNICATIONS NETWORKS - A method of statistical sharing in an optical communications network is disclosed. The method includes identifying a peak transmission rate and a base transmission rate for each of a plurality of client interface cards of an optical node. | 04-10-2014 |
20140099118 | SYSTEMS AND METHODS FOR ROUTING AND WAVELENGTH ASSIGNMENT FOR NETWORK VIRTUALIZATION - A method for routing and wavelength assignment for optical network resources required for a plurality of virtual network requests includes receiving the plurality of virtual network requests. The method further includes determining a number of virtual links for each virtual network request. The method includes sorting the plurality of virtual network requests based on the number of virtual links, and selecting a virtual network request from the plurality of virtual network requests and setting a number of allowable spans. Additionally, the method includes determining whether a valid virtual node mapping exists for the virtual network request on any of a plurality of wavelengths based on the allowable spans, and based on determining that no valid virtual node mapping exists on any of the plurality of wavelengths, incrementing the number of allowable spans. | 04-10-2014 |
20140215032 | SYSTEMS AND METHODS OF NETWORK RECONFIGURATION - The present disclosure may include a method of reconfiguring a network. The method includes collecting a plurality of network demands, each of the plurality of network demands having a possible resource release by rerouting the network demand from its current path to a new path. The method further includes selecting a subset of the plurality of network demands that, if rerouted, has the highest resource release without resource contention. The method additionally includes rerouting the subset of the plurality of network demands, and, in response to rerouting the subset of the plurality of network demands, releasing resources no longer used by rerouted demands. The present disclosure may further include associated systems and apparatuses. | 07-31-2014 |
20140308040 | OPTICAL PATH COMPUTATION BASED ON A REACHABILITY MATRIX - Methods and systems for optical path computation based on a reachability matrix may rely on matrix multiplication to determine a number and respective network locations of regenerators for establishing an end-to-end reachable path in an optical network between a source node and a destination node. The reachability matrix may specify directly reachable optical paths between nodes in the optical network. | 10-16-2014 |
20140317257 | RISK MITIGATION IN DATA CENTER NETWORKS - A method employing resource orchestration algorithms may find a fewest number of working data centers (DCs) to guarantee K-connect survivability using an overlay network representing a physical optical network. The overlay network may not include certain topological features of the physical optical network. A risk-based algorithm may result in fewer working DCs for K-connect survivability. A delay-based algorithm may be more suitable for delay-sensitive cloud applications. | 10-23-2014 |
20150104172 | FLEXIBLE VIRTUAL OPTICAL NETWORK PROVISIONING USING DISTANCE-ADAPTIVE MODULATION - Flexible VON provisioning may include calculating a candidate mapping pattern to satisfy a virtual optical network (VON) demand based on virtual-to-physical node mapping choices. A distance-adaptive routing and spectral slot assignment evaluation of the candidate mapping pattern may be performed. When the VON demand is satisfied by the candidate mapping pattern, the candidate mapping pattern may be added to a valid mapping patterns list. A final mapping pattern may be selected from the valid mapping patterns list, the final mapping pattern having one of a lowest slot layer and a smallest overall slot usage on the valid mapping patterns list. Then, network resources may be reserved based on the final mapping pattern selected to service the VON demand. | 04-16-2015 |
20150295673 | EFFICIENT UTILIZATION OF TRANSCEIVERS FOR SHARED RESTORATION IN FLEXIBLE GRID OPTICAL NETWORKS - Optical transceiver sharing methods may be based on different ROADM node architectures for shared restoration in flexible grid optical networks. A ROADM node architecture with a pool of transceivers may improve transceiver utilization for backup optical paths, compared to a conventional ROADM node architecture. Sharing of transceivers in the pool for working and backup optical paths may further improve transceiver utilization. The methods disclosed herein may be used for multiple bit rates and different modulation formats. | 10-15-2015 |
20150295761 | OBJECT-ORIENTED NETWORK VIRTUALIZATION - Object-oriented network virtualization may involve creating and operating virtual network objects (VNO) using a software-programmed networking operating system (SPN OS). A VNO may be a complete representation of a virtual network service provided under the SPN OS. A VNO may have a unique identity and properties, along with an internal set of methods for executing functionality encapsulated by the VNO. A VNO may exhibit persistence and autonomous control to enable improved virtual network services. | 10-15-2015 |
Patent application number | Description | Published |
20100307913 | PLATING APPARATUS FOR METALLIZATION ON SEMICONDUCTOR WORKPIECE - The present invention provides a plating apparatus with multiple anode zones and cathode zones. The electrolyte flow field within each zone is controlled individually with independent flow control devices. A gas bubble collector whose surface is made into pleated channels is implemented for gas removal by collecting small bubbles, coalescing them, and releasing the residual gas. A buffer zone built within the gas bubble collector further allows unstable microscopic bubbles to dissolve. | 12-09-2010 |
20110199842 | DRAM CELL UTILIZING FLOATING BODY EFFECT AND MANUFACTURING METHOD THEREOF - The present invention discloses a DRAM cell utilizing floating body effect and a manufacturing method thereof. The DRAM cell includes a first N type semiconductor region provided on a buried oxide layer, a P type semiconductor region provided on the first N type semiconductor region, a gate region provided on the P type semiconductor region, and an electrical isolation region surrounding the P type semiconductor region and the N type semiconductor region. A diode is taken as a storage node. Via a tunneling effect between bands, holes gather in the floating body, which is defined as a first storage state; via forward bias of PN junction, holes are emitted out from the floating body or electrons are injected into the floating body, which is defined as a second storage state. The present invention provides a highly efficient DRAM cell utilizing floating body effect with high density, which has low power consumption, has simple manufacturing process, and is compatible to the conventional CMOS and conventional logic circuit manufacturing process. | 08-18-2011 |
20110221002 | MOS-TYPE ESD PROTECTION DEVICE IN SOI AND MANUFACTURING METHOD THEREOF - The present invention discloses a MOS ESD protection device for SOI technology and a manufacturing method for the device. The MOS ESD protection device comprises: an epitaxial silicon layer grown on top of an SOI substrate; a first side-wall spacer disposed on both sides of the epitaxial silicon layer so as to isolate the ESD protection device from the intrinsic active structures; a source region and a drain region disposed respectively on two sides of the epitaxial silicon layer; a poly silicon gate and a gate dielectric formed on top of the epitaxial silicon layer; and a second side-wall spacer disposed on both sides of the poly silicon gate of . ESD leakage current passes down to the SOI substrate for protection. Because ESD protection device and intrinsic MOS transistor are located in the same plane, this fabrication process can be inserted in the current MOS process flow. | 09-15-2011 |
20110233727 | VERTICAL SOI BIPOLAR JUNCTION TRANSISTOR AND MANUFACTURING METHOD THEREOF - The present invention discloses a vertical SOI bipolar junction transistor and a manufacturing method thereof. The bipolar junction transistor includes an SOI substrate from down to up including a body region, a buried oxide layer and a top silicon film; an active region located in the top silicon film formed by STI process; a collector region located in the active region deep close to the buried oxide layer formed by ion implantation; a base region located in the active region deep close to the top silicon film formed by ion implantation; an emitter and a base electrode both located over the base region; a side-wall spacer located around the emitter and the base electrode. The present invention utilizing a simple double poly silicon technology not only can improve the performance of the transistor, but also can reduce the area of the active region in order to increase the integration density. Furthermore, the present invention utilizes side-wall spacer process to improve the compatibility of SOI BJT and SOI CMOS, which simplifies the SOI BiCMOS process and thus reduce the cost. | 09-29-2011 |
20110248354 | HYBRID MATERIAL INVERSION MODE GAA CMOSFET - A Ge and Si hybrid material inversion mode GAA (Gate-All-Around) CMOSFET includes a PMOS region having a first channel, an NMOS region having a second channel and a gate region. The first channel and the second channel have a racetrack-shaped cross section and are formed of n-type Ge and p-type Si, respectively; the surfaces of the first channel and the second channel are substantially surrounded by the gate region; a buried oxide layer is disposed between the PMOS region and the NMOS region and between the PMOS or NMOS region and the Si substrate to isolate them from one another. In an inversion mode, the devices have hybrid material, GAA structure with the racetrack-shaped, high-k gate dielectric layer and metal gate, so as to achieve high carrier mobility, prevent polysilicon gate depletion and short channel effects. | 10-13-2011 |
20110254013 | HYBRID ORIENTATION ACCUMULATION MODE GAA CMOSFET - A hybrid orientation accumulation mode GAA (Gate-All-Around) CMOSFET includes a PMOS region having a first channel, an NMOS region having a second channel and a gate region. The first channel and the second channel have a racetrack-shaped cross section and are formed of p-type Si(110) and n-type Si(100), respectively; the surfaces of the first channel and the second channel are substantially surrounded by the gate region; a buried oxide layer is disposed between the PMOS region and the NMOS region and between the PMOS or NMOS region and the Si substrate to isolate them from one another. The device structure according to the prevent invention is quite simple, compact and highly integrated. In an accumulation mode, current flows through the overall racetrack-shaped channel. The disclosed device results in high carrier mobility. Meanwhile polysilicon gate depletion and short channel effects are prevented, and threshold voltage is increased. | 10-20-2011 |
20110254058 | Gate-All-Around CMOSFET devices - A GAA (Gate-All-Around) CMOSFET device includes a semiconductor substrate, a PMOS region having a first channel, an NMOS region having a second channel and a gate region. The surfaces of the first channel and the second channel are substantially surrounded by the gate region. A buried insulation layer is disposed between the PMOS region and the NMOS region and between the PMOS or NMOS region and the semiconductor substrate to isolate them from one another. The structure is simple, compact and highly integrated, has high carrier mobility, and avoids polysilicon gate depletion and short channel effect. | 10-20-2011 |
20110254099 | Hybrid material accumulation mode GAA CMOSFET - A Ge and Si hybrid material accumulation mode GAA (Gate-All-Around) CMOSFET includes a PMOS region having a first channel, an NMOS region having a second channel and a gate region. The first channel and the second channel have a circular-shaped cross section and are formed of p-type Ge and n-type Si, respectively; the surfaces of the first channel and the second channel are substantially surrounded by the gate region; a buried oxide layer is disposed between the PMOS region and the NMOS region and between the PMOS or NMOS region and the Si substrate to isolate them from one another. In an accumulation mode, current flows through the overall cylindrical channel, so as to achieve high carrier mobility, reduce low-frequency noises, prevent polysilicon gate depletion and short channel effects and increase the threshold voltage of the device. | 10-20-2011 |
20110254100 | HYBRID MATERIAL ACCUMULATION MODE GAA CMOSFET - A Ge and Si hybrid material accumulation mode GAA (Gate-All-Around) CMOSFET includes a PMOS region having a first channel, an NMOS region having a second channel and a gate region. The first channel and the second channel have a racetrack-shaped cross section and are formed of p-type Ge and n-type Si, respectively; the surfaces of the first channel and the second channel are substantially surrounded by the gate region; a buried oxide layer is disposed between the PMOS region and the NMOS region and between the PMOS or NMOS region and the Si substrate to isolate them from one another. In an accumulation mode, current flows through the overall racetrack-shaped channel. The disclosed device has high carrier mobility, high device drive current, and maintains the electrical integrity of the device. Meanwhile, polysilicon gate depletion and short channel effects are prevented. | 10-20-2011 |
20110254101 | HYBRID MATERIAL INVERSION MODE GAA CMOSFET - A Ge and Si hybrid material inversion mode GAA (Gate-All-Around) CMOSFET includes a PMOS region having a first channel, an NMOS region having a second channel and a gate region. The first channel and the second channel have a circular-shaped cross section and are formed of n-type Ge and p-type Si, respectively; the surfaces of the first channel and the second channel are substantially surrounded by the gate region; a buried oxide layer is disposed between the PMOS region and the NMOS region and between the PMOS or NMOS region and the Si substrate to isolate them from one another. In an inversion mode, current flows through the overall cylindrical channel, so as to achieve high carrier mobility, reduce low-frequency noises, prevent polysilicon gate depletion and short channel effects and increase the threshold voltage of the device. | 10-20-2011 |
20110254102 | HYBRID ORIENTATION INVERSION MODE GAA CMOSFET - A hybrid orientation inversion mode GAA (Gate-All-Around) CMOSFET includes a PMOS region having a first channel, an NMOS region having a second channel and a gate region. The first channel and the second channel have a racetrack-shaped cross section and are formed of n-type Si (110) and p-type Si(100), respectively; the surfaces of the first channel and the second channel are substantially surrounded by the gate region; a buried oxide layer is disposed between the PMOS region and the NMOS region and between the PMOS or NMOS region and the Si substrate to isolate them from one another. The device structure according to the prevent invention is quite simple, compact and highly integrated. In an inversion mode, the devices have different orientation channels, the GAA structure with the racetrack-shaped, high-k gate dielectric layer and metal gate, so as to achieve high carrier mobility, and prevent polysilicon gate depletion and short channel effects. | 10-20-2011 |
20110259752 | METHOD FOR SUBSTANTIALLY UNIFORM COPPER DEPOSITION ONTO SEMICONDUCTOR WAFER - The methods practiced in an electrochemical deposition apparatus with two or more electrodes, described in earlier inventions, are disclosed. The methods produce uniform copper films with WFNU less than 2.5% on semiconductor wafers bearing a resistive copper seed layer with a thickness ranging from 50 to 9O0 A in a copper sulfate based electrolyte whose conductivity is between 0.02 to 0.8 S/cm. | 10-27-2011 |
20110291191 | MOS Structure with Suppressed SOI Floating Body Effect and Manufacturing Method thereof - The present invention discloses a MOS structure with suppressed floating body effect including a substrate, a buried insulation layer provided on the substrate, and an active area provided on the buried insulation layer comprising a body region, a first conductive type source region and a first conductive type drain region provided on both sides of the body region respectively and a gate region provide on top of the body region, wherein the active area further comprises a highly doped second conductive type region between the first conductive type source region and the buried insulation layer. For manufacturing this structure, implant ions into a first conductive type source region via a mask having an opening thereon forming a highly doped second conductive type region under the first conductive type source region and above the buried insulation layer. The present invention will not increase chip area and is compatible with conventional CMOS process. | 12-01-2011 |
20110292723 | DRAM CELL UTILIZING FLOATING BODY EFFECT AND MANUFACTURING METHOD THEREOF - The present invention discloses a DRAM cell utilizing floating body effect and a manufacturing method thereof. The DRAM cell includes a P type semiconductor region provided on a buried oxide layer, an N type semiconductor region provided on the P type semiconductor region, a gate region provided on the N type semiconductor region, and an electrical isolation region surrounding the P type semiconductor region and the N type semiconductor region. A diode of floating body effect is taken as a storage node. Via a tunneling effect between bands, electrons gather in the floating body, which is defined as a first storage state; via forward bias of PN junction, electrons are emitted out from the floating body or holes are injected into the floating body, which is defined as a second storage state. The present invention provides a highly efficient DRAM cell utilizing floating body effect with high density, which has low power consumption, has simple manufacturing process, and is compatible to the conventional CMOS and conventional logic circuit manufacturing process. | 12-01-2011 |
20120009741 | SOI MOS DEVICE HAVING A SOURCE/BODY OHMIC CONTACT AND MANUFACTURING METHOD THEREOF - The present invention discloses a manufacturing method of SOI MOS device having a source/body ohmic contact. The manufacturing method comprises steps of: firstly creating a gate region, then performing high dose source and drain light doping to form the lightly doped N-type source region and lightly doped N-type drain region; forming an insulation spacer surrounding the gate region; performing large tilt heavily-doped P ion implantation in an inclined direction via a mask with an opening at the position of the N type Si source region and implanting P ions into the space between the N type Si source region and the N type drain region to form a heavily-doped P-type region; finally forming a metal layer on the N type Si source region, then allowing the reaction between the metal layer and the remained Si material underneath to form silicide by heat treatment. In the device prepared by the method of the present invention, an ohmic contact is formed between the silicide and the heavily-doped P-type region nearby in order to release the holes accumulated in body region of the SOI MOS device and eliminate floating body effects thereof. Besides, the device of the present invention also has following advantages, such as limited chip area, simplified fabricating process and great compatibility with traditional CMOS technology. | 01-12-2012 |
20120012931 | SOI MOS DEVICE HAVING BTS STRUCTURE AND MANUFACTURING METHOD THEREOF - The present invention discloses a SOI MOS device having BTS structure and manufacturing method thereof. The source region of the SOI MOS device comprises: two heavily doped N-type regions, a heavily doped P-type region formed between the two heavily doped N-type regions, a silicide formed above the heavily doped N-type regions and the heavily doped P-type region, and a shallow N-type region which is contact to the silicide; an ohmic contact is formed between the heavily doped P-type region and the silicide thereon to release the holes accumulated in body region of the SOI MOS device and eliminate floating body effects thereof without increasing the chip area and also overcome the disadvantages such as decreased effective channel width of the devices in the BTS structure of the prior art. The manufacturing method comprises steps of: forming a heavily doped P-type region via ion implantation, forming a metal layer above the source region and forming a silicide via the heat treatment between the metal layer and the Si underneath. The device in the present invention could be fabricated via simplified fabricating process with great compatibility with traditional CMOS technology. | 01-19-2012 |
20120018809 | MOS DEVICE FOR ELIMINATING FLOATING BODY EFFECTS AND SELF-HEATING EFFECTS - A MOS device having low floating charge and low self-heating effects are disclosed. The device includes a connective layer coupling the active gate channel to the Si substrate. The connective layer provides electrical and thermal passages during device operation, which could eliminate floating effects and self-heating effects. An example of a MOS device having a SiGe connector between a Si active channel and a Si substrate is disclosed in detail and a manufacturing process is provided. | 01-26-2012 |
20120021571 | Method of Reducing Floating Body Effect of SOI MOS Device Via a Large Tilt Ion Implantation - The present invention discloses a method of reducing floating body effect of SOI MOS device via a large tilt ion implantation including a step of: (a) implanting ions in an inclined direction into an NMOS with a buried insulation layer forming a highly doped P region under a source region of the NMOS and above the buried insulation layer, wherein the angle between a longitudinal line of the NMOS and the inclined direction is ranging from 15 to 45 degrees. Through this method, the highly doped P region under the source region and a highly doped N region form a tunnel junction so as to reduce the floating body effect. Furthermore, the chip area will not be increased, manufacturing process is simple and the method is compatible with conventional CMOS process. | 01-26-2012 |
20120025267 | MOS DEVICE FOR ELIMINATING FLOATING BODY EFFECTS AND SELF-HEATING EFFECTS - A SOI MOS device for eliminating floating body effects and self-heating effects are disclosed. The device includes a connective layer coupling the active gate channel to the Si substrate. The connective layer provides electrical and thermal passages during device operation, which could eliminate floating body effects and self-heating effects. An example of a MOS device having a SiGe connector between a Si active channel and a Si substrate is disclosed in detail and a manufacturing process is provided. | 02-02-2012 |
20120112283 | ESD PROTECTION DEVICES FOR SOI INTEGRATED CIRCUIT AND MANUFACTURING METHOD THEREOF - The present invention discloses an ESD protection structure in a SOI CMOS circuitry. The ESD protection structure includes a variety of longitudinal (vertical) PN junction structures having significantly enlarged junction areas for current flow. The resulting devices achieve increased heavy current release capability. Processes of fabricating varieties of the ESD protection longitudinal PN junction are also disclosed. Compatibility of the disclosed fabrication processes with current SOI technology reduces implementation cost and improves the integration robustness. | 05-10-2012 |
20120115287 | MANUFACTURING METHOD OF SOI MOS DEVICE ELIMINATING FLOATING BODY EFFECTS - The present invention discloses a manufacturing method of SOI MOS device eliminating floating body effects. The active area of the SOI MOS structure according to the present invention includes a body region, a N-type source region, a N-type drain region, a heavily doped P-type region, wherein the N-type source region comprises a silicide and a buried insulation region and the heavily doped P-type region is located between the silicide and the buried insulation region. The heavily doped P-type region contacts to the silicide, the body region, the buried insulation layer and the shallow trench isolation (STI) structure respectively. The manufacturing method of the device comprises steps of forming a heavily doped P-type region via ion implantation method, forming a metal layer on a part of the surface of the source region, then obtaining a silicide by the heat treatment of the metal layer and the Si material below. The present invention utilizes the silicide and the heavily doped P-type region to form an ohmic contact in order to release the holes accumulated in the body region of SOI MOS device and eliminate SOI MOS floating body effects. Besides, the manufacturing process is simple and can be easily implement. Further, the manufacturing process according to the present invention will not increase chip area and is compatible with conventional CMOS process. | 05-10-2012 |
20120129320 | METHOD OF NISIGE EPITAXIAL GROWTH BY INTRODUCING AL INTERLAYER - The present invention discloses a method of NiSiGe epitaxial growth by introducing Al interlayer, comprising the deposition of an Al thin film on the surface of SiGe layer, subsequent deposition of a Ni layer on Al thin film and then the annealing process for the reaction between Ni layer and SiGe material of SiGe layer to form NiSiGe material. Due to the barrier effect of Al interlayer, NiSiGe layer features a single crystal structure, a flat interface with SiGe substrate and a thickness of up to 0.3 nm, significantly enhancing interface performance. | 05-24-2012 |
20120205743 | PD SOI DEVICE WITH A BODY CONTACT STRUCTURE - The present invention discloses a PD SOI device with a body contact structure. The active region of the PD SOI device includes: a body region; a gate region, which is inverted-L shaped, formed on the body region; a N-type source region and a N-type drain region, formed respectively at the two opposite sides of the anterior part the body region; a body contact region, formed at one side of the posterior part of the body region, which is side-by-side with the N-type source region; and a first silicide layer, formed on the body contact region and the N-type source region, which is contact to both of the body contact region and the N-type source region. The body contact region of the device is formed on the border of the source region and the leading-out terminal of the gate electrode. It can suppress floating body effect of the PD SOI device meanwhile not increasing the chip area, thereby overcoming the shortcoming in the prior art that the chip area is enlarged when the traditional body contact structure is employed. Furthermore, the fabrication process provided herein is simple and compatible to the CMOS technology. | 08-16-2012 |
20130029478 | METHOD OF FABRICATING HIGH-MOBILITY DUAL CHANNEL MATERIAL BASED ON SOI SUBSTRATE - The present invention discloses a method of fabricating high-mobility dual channel material based on SOI substrate, wherein compressive strained SiGe is epitaxially grown on a conventional SOI substrate to be used as channel material of PMOSFET; Si is then epitaixally grown on SiGe, and approaches such as ion implantation and annealing are employed to allow relaxation of part of strained SiGe and transfer strain to the Si layer thereon so as to form strained Si material as channel material of NMOSFET. With simple process and easy realization, this method can provide high-mobility channel material for NMOSFET and PMOSFET at the same time, well meeting the requirement of simultaneously enhancing the performance of NMOSFET and PMOSFET devices and therefore providing potential channel material for CMOS process of the next generation. | 01-31-2013 |
20130054209 | Modeling Method of SPICE Model Series of SOI FET - The present invention provides a modeling method of a SPICE model series of a Silicon On Insulator (SOI) Field Effect Transistor (FET), where auxiliary devices are designed and fabricated, electrical property data is measured, intermediate data is obtained, model parameters are extracted based on the intermediate data, a SPICE model of an SOI FET of a floating structure is established, model parameters are extracted by using the intermediate data and data of the auxiliary devices, a macro model is complied, and a SPICE model of an SOI FET of a body leading-out structure is established. The modeling method provided in the present invention takes an influence of a parasitic transistor of a leading-out part in a body leading-out structure into consideration, and model series established by using the method can more accurately reflect actual operating conditions and electrical properties of the SOI FET of a body leading-out structure and the SOI FET of a floating structure, thereby improving fitting effects of the models. | 02-28-2013 |
20130054210 | Method for Determining BSIMSOI4 DC Model Parameters - The present invention provides a method for determining BSIMSOI4 Direct Current (DC) model parameters, where a plurality of Metal Oxide Semiconductor Field Effect Transistor (MOSFET) devices of a body leading-out structure and of different sizes, and a plurality of MOSFET devices of a floating structure and of different sizes are provided; Id-Vg-Vp, Id/Ip-Vd-Vg, Ig-Vg-Vd, Ig-Vp, Ip-Vg-vd, Is/Id-Vp, and Id/Ip-Vp-Vd properties of all the MOSFET devices of a body leading-out structure, and Id-Vg-Vp, Id-Vd-Vg, and Ig-Vg-Vd properties of all the MOSFET devices of a floating structure are measured; electrical property curves without a self-heating effect of each MOSFET device of a body leading-out structure and each MOSFET device of a floating structure are obtained; and then DC parameters of a BSIMSOI4 model are successively extracted according to specific steps. In the present invention, proper test curves are successively selected according to model equations, and various kinds of parameters are successively determined, thereby accurately and effectively extracting the DC parameters of the BSIMSOI4 model. | 02-28-2013 |
20130054219 | Equivalent Electrical Model of SOI FET of Body Leading-Out Structure, and Modeling Method Thereof - The present invention provides an equivalent electrical model of a Silicon On Insulator (SOI) Field Effect Transistor (FET) of a body leading-out structure, and a modeling method thereof. The equivalent electrical model is formed by an internal FET and an external FET connected in parallel, where the SOI FET of a body leading-out structure is divided into a body leading-out part and a main body part, the internal FET represents a parasitic transistor of the body leading-out part, and the external FET represents a normal transistor of the main body part. The equivalent electrical model provided in the present invention completely includes the influence of parts of a physical structure of the SOIMOSFET device of a body leading-out structure, that is, the body leading-out part and the main body part, on the electrical properties, thereby improving a fitting effect of the model on the electrical properties of the device. | 02-28-2013 |
20130062696 | SOI Semiconductor Structure with a Hybrid of Coplanar Germanium and III-V, and Preparation Method thereof - The present invention provides an SOI semiconductor structure with a hybrid of coplanar germanium (Ge) and III-V, and a method for preparing the same. A heterogeneous integrated semiconductor structure with a hybrid of Ge and the group III-V semiconductor material coplanar on an insulator includes at least one Ge substrate formed on the insulating layer, and the other substrate is a group III-V semiconductor material formed on the Ge semiconductor. The preparation method for forming the semiconductor structure includes: preparing a global Ge on insulator substrate structure; preparing a group III-V semiconductor material layer on the Ge on insulator substrate structure; performing photolithography and etching for the first time to make a patterned window to the above of a Ge layer to form a recess; preparing a spacer in the recess; preparing a Ge film by selective epitaxial growth; performing a chemical mechanical polishing to obtain the heterogeneous integrated semiconductor structure with a hybrid of Ge and the group III-V semiconductor material being coplanar; removing the spacer and a defective Ge layer part close to the spacer; implementing isolation between Ge and the group III-V semiconductor material; and preparing a high-performance CMOS device including a Ge PMOS and a III-V NMOS by forming an MOS structure. | 03-14-2013 |
20130152033 | TCAD Emulation Calibration Method of SOI Field Effect Transistor - The present invention provides a Technology Computer Aided Design (TCAD) emulation calibration method of a Silicon On Insulator (SOI) field effect transistor, where process emulation Metal Oxide Semiconductor (MOS) device structures with different channel lengths Lgate are obtained by establishing a TCAD process emulation program; based on the process emulation MOS device structures, the process emulation MOS device structures are calibrated according to a Transmission Electron Microscope (TEM) test result, a secondary ion mass spectrometer (SIMS) test result, a Capacitor Voltage (CV) test result, a WAT test result, and a square resistance test result of an actual device, so as to complete TCAD emulation calibration of key electrical parameters of an SOI field effect transistor. Through the calibration method consistent with the present invention, in the same SOI process, TCAD emulation results of key parameters Vt and Idsat of MOSFETs of different sizes all meet a high-precision requirement that an error is less than 10%; moreover, accurate and effective pretest can be implement in the case of multiple splits, thereby providing effective guidance for research, development and optimization of a new process flow. | 06-13-2013 |
20130167605 | AQUEOUS SOLUTION LUBRICANT FOR ALUMINUM COLD ROLLING - Compositions related to a water-based lubricant fluid for aluminum cold rolling which is free from measurable particles or oil droplets which can be applied in field production. A single-phase lubricant fluid may include water-soluble polymers, lubricating additives, anti-rust additives, anti-oxidant additives, pH-adjust additives, or combinations thereof. | 07-04-2013 |
20130264609 | Semiconductor Structure of Hybrid of Coplanar Ge and III-V and Preparation Method Thereof - The present invention provides a semiconductor structure with a hybrid of Ge and a group III-V material coplanar and a preparation method thereof. A heterogeneously integrated semiconductor structure with Ge and a group III-V semiconductor material coplanar includes at least one Ge substrate formed on a bulk silicon substrate, and the other substrate is the group III-V semiconductor material formed on the Ge semiconductor. The preparation method includes: preparing a Ge semiconductor layer on a bulk silicon substrate; preparing a group III-V semiconductor material layer on the Ge semiconductor layer; performing first photolithography and etching to make a patterned window to a Ge layer so as to form a recess; preparing a spacer in the recess; preparing a Ge film through selective epitaxial growth; performing chemical mechanical polishing to obtain a heterogeneously integrated semiconductor structure with a hybrid of Ge and the group III-V semiconductor material coplanar; removing the spacer and a defect part of the Ge layer close to the spacer; implementing isolation between Ge and the group III-V semiconductor material; and preparing a high performance CMOS device including a Ge channel PMOS and a group III-V channel NMOS by forming an MOS structure. | 10-10-2013 |
20130273714 | METHOD FOR PREPARING SEMICONDUCTOR SUBSTRATE WITH INSULATING BURIED LAYER BY GETTERING PROCESS - A method for preparing a semiconductor substrate with an buried insulating layer by a guttering process, includes the following steps: providing a device substrate and a supporting substrate; forming an insulating layer on a surface of the device substrate; performing a heating treatment on the device substrate, so as to form a denuded zone on the surface of the device substrate; bonding the device substrate having the insulating layer with the supporting substrate, such that the insulating layer is sandwiched between the device substrate and the supporting substrate; annealing and reinforcing a bonding interface, such that an adherence level of the bonding interface meets requirements in the following chamfering grinding, thinning and polishing processes; performing the chamfering grinding, thinning and polishing processes on the device substrate which is bonded. | 10-17-2013 |
20140216940 | METHODS AND APPARATUS FOR UNIFORMLY METALLIZATION ON SUBSTRATES - An apparatus for substrate metallization from electrolyte is provided. The apparatus comprises: an immersion cell containing metal salt electrolyte; at least one electrode connecting to at least one power supply; an electrically conductive substrate holder holding at least one substrate to expose a conductive side of the substrate to face the at least one electrode; an oscillating actuator for oscillating the substrate holder with an amplitude and a frequency; at least one ultrasonic device with an operating frequency and an intensity, disposed in the metallization apparatus; at least one ultrasonic power generator connecting to the ultrasonic device; at least one inlet for metal slat electrolyte feeding; and at least one outlet for metal salt electrolyte draining. | 08-07-2014 |
20150332940 | METHOD AND APPARATUS FOR CLEANING SEMICONDUCTOR WAFER - A method and apparatus ( | 11-19-2015 |
20160005609 | MANUFACTURING METHOD OF GRAPHENE MODULATED HIGH-K OXIDE AND METAL GATE MOS DEVICE - A manufacturing method of a graphene modulated high-k oxide and metal gate Ge-based MOS device, which comprises the following steps: 1) introducing a graphene thin film on a Ge-based substrate; 2) conducting fluorination treatment to the graphene thin film to form fluorinated graphene; 3) activating the surface of the fluorinated graphene by adopting ozone plasmas, and then forming a high-k gate dielectric on the surface of the fluorinated graphene through an atomic layer deposition technology; and 4) forming a metal electrode on the surface of the high-k gate dielectric. Since the present invention utilizes the graphene as a passivation layer to inhibit the formation of unstable oxide GeO | 01-07-2016 |
Patent application number | Description | Published |
20140032652 | WEB BROWSER OPERATION METHOD AND SYSTEM - A browser operation and control method is provided for a server and a client having a browser. The server receives a query request message from the client, and the query request message contains a character string converted by the client from voice information inputted by a user of the client. The server obtains control information for operating the browser based on the character string in the query request message, and the control information indicating one of a plurality results provided by the server including a direct URL based on the character string, a direct operation command based on the character string, and a search result page based on the character string. The server sends a query response message containing the control information to the client such that the client operates the browser based on the control information in response to the voice information inputted by the user. | 01-30-2014 |
20140097246 | METHOD AND DEVICE FOR BATCH SCANNING 2D BARCODES - Methods and devices for batch scanning 2D barcodes are provided by using a 2D barcode positioning process to determine a barcode area corresponding to each 2D barcode of a plurality of 2D barcodes in an image. According to the barcode area corresponding to each 2D barcode, the image containing the plurality of 2D barcodes can be segmented to provide a plurality of 2D barcode images with each barcode image corresponding to one 2D barcode of the plurality of 2D barcodes. Each barcode image of the plurality of 2D barcode images corresponding to the plurality of 2D barcodes can be decoded to obtain data contained in each barcode image. An exemplary device can include a positioning module, a segmenting module, and a decoding module. | 04-10-2014 |
20140103111 | INFORMATION OBTAINING METHOD AND APPARATUS - Various embodiments provide methods, apparatus, and electronic devices for information obtaining, information management and 2D barcode generation. In an exemplary method implemented by an electronic device, a first two-dimensional (2D) barcode can be obtained. An image transformation can be performed on the first 2D barcode to obtain a virtual 2D barcode. Further, according to validity of the virtual 2D barcode, relationship information of the first 2D barcode can be obtained based on a mapping relationship of the virtual 2D barcode in a database. | 04-17-2014 |
20140110473 | METHOD AND SYSTEM FOR CROSS-TERMINAL CLOUD BROWSING - A method is provided for cross-terminal cloud browsing on the Internet. The method includes a second terminal obtaining a 2D bar code generated by a first terminal corresponding to a web content currently being presented on a webpage on the first terminal. The 2D bar code includes at least presentation information of the web content. The method also includes the second terminal parsing the 2D bar code to obtain the presentation information of the web content contained in the 2D bar code. Further, the method includes the second terminal establishing a link using the presentation information of the web content to realize cross-terminal presentation of the web content on the second terminal. | 04-24-2014 |
20140124580 | METHOD AND APPARATUS FOR EXECUTING USER ACTION COMMANDS - A method is provided for performing action commands on a mobile terminal. The method includes reading a 2D barcode to obtain 2D barcode information. The he 2D barcode information includes at least an action command identifier and a call instruction for calling an application program interface (API) corresponding to the action command. The method also includes calling the API corresponding to the action command and completing execution of the action command. | 05-08-2014 |
20140250407 | METHOD, APPARATUS AND COMPUTER READABLE STORAGE MEDIUM FOR DISPLAYING SIDEBAR INFORMATION - Embodiments of the present disclosure disclose a method, apparatus and computer readable storage medium for displaying sidebar information, relate to the field of information technology, and improve the display accuracy of the sidebar information. The method includes: first obtaining an operation trail on a screen interface; then determining whether the operation trail is an operation trail to trigger displaying the sidebar information; if the operation trail is the operation trail to trigger displaying the sidebar information, displaying or playing a piece of prompt information for confirming whether to display the sidebar information; finally receiving a confirmation operation for displaying the sidebar information and displaying the sidebar information on the screen interface. | 09-04-2014 |
20140285456 | SCREEN CONTROL METHOD AND THE APPARATUS - Screen control methods and apparatus are provided. When it is determined that a touch control pressure value on a touch control screen exceeds a pre-set pressure threshold value to, a touch control operation by a finger on the touch control screen can be obtained. Corresponding to the touch control operation, a control instruction can be called according to a mapping relationship table that is pre-set. The mapping relationship table includes a mapping relationship between the touch control operation and the control instruction. The touch control screen can be controlled to display contents according to the control instruction. | 09-25-2014 |
20140289316 | METHOD AND SYSTEM FOR SYNCHRONIZING BROWSER BOOKMARKS - Methods and systems for synchronizing browser bookmarks are provided herein. In an exemplary method, a server can receive a bookmark collection sent by a first terminal browser. The bookmark collection can contain one or more bookmarks. The server can push the bookmark collection to a second terminal browser for the second terminal browser to simultaneously add the one or more bookmarks contained in the bookmark collection as bookmarks of the second terminal browser. | 09-25-2014 |
20140289806 | METHOD, APPARATUS AND ELECTRONIC DEVICE FOR ENABLING PRIVATE BROWSING - The present disclosure discloses a method, apparatus, browser, electronic device and computer readable storage medium for enabling private browsing, and belongs to the field of computer technology. The method includes receiving user identification information for enabling a private browsing mode of the browser; checking whether the user identification information is matched with the prestored user identification information; and enabling the private browsing mode of the browser if the checking result is that the user identification information is matched with a prestored user identification information. By setting the user identification information for the private browsing mode of the browser, the private browsing mode of the browser can be used only when a legitimate user inputs the correct user identification information, thereby it is avoided that other users perform operations which infringe on the legitimate user's rights and interests or privacy, so that security risks are greatly reduced. | 09-25-2014 |
20140297285 | AUTOMATIC PAGE CONTENT READING-ALOUD METHOD AND DEVICE THEREOF - The present disclosure discloses a page content reading method and device thereof. The method includes obtaining page content requested to browse, and determining whether a format of the page content meets a pre-determined requirement; it the format of the page content meets the pre-determined requirement, displaying the page content, and processing the page content into a form adapted for reading-aloud and automatically reading-aloud the processed page content, upon receiving a reading-aloud request; if the format of the page content does not meet the pre-determined requirement, displaying a page content, after the format of which having been converted into a format that meets the pre-determined requirement, and processing the page content into a form adapted for reading-aloud and automatically reading-aloud the processed page content, upon receiving a reading-aloud request from the user. The embodiment of the present invention can be widely applied and can bring down the cost of realization. | 10-02-2014 |
20140298158 | METHOD AND APPARATUS FOR TEXT INPUT PROTECTION - Methods and apparatus for text input protection are provided. Text content inputted in an input field can be saved, after the text content inputted by a user in the input field of a browser on a mobile terminal is detected. When the browser is abnormally terminated while the user inputting the text content, the browser can be restarted and the saved text content can be imported into the input field. An exemplary apparatus can include a storage unit, an importing unit, and/or a cleanup unit. | 10-02-2014 |
20140298395 | METHODS AND SYSTEMS FOR PLAYING VIDEO ON MULTIPLE TERMINALS - A method and system for synchronized video playing across multiple user terminals are disclosed. The method includes sending a continued video playing request to a server from a first user terminal to play a video from a break point, receiving video information from the server, the video information being submitted from a second user terminal, and playing the video from the break point based on the received video information. The method and system consistent with the present disclosure may improve a user's video watching experience by enabling a user to seamless switch between different user terminals. | 10-02-2014 |
20140324810 | INTERNET ACCESSING METHOD AND DEVICE, MOBILE TERMINAL AND STORAGE MEDIUM - The invention discloses an Internet accessing method and device, a mobile terminal and a storage medium, and the method comprises: shooting and obtaining an image showing target characters; recognizing and obtaining contents of the target characters shown in the image; an accessing the Internet according to the contents of the target characters. In the present invention, the image showing the target characters is obtained through shooting/scanning by the terminal device, and the contents of the target characters can be recognized from the image based on the text recognition technologies, so that the Internet can be automatically accessed according to the obtained contents of the target characters. Therefore, it is possible to automatically access the Internet to obtain related information according to the external text or character information without manual input of the external text or character information by the user or with the manual input of a simple instruction. | 10-30-2014 |
20140327831 | METHOD AND SYSTEM FOR DYNAMIC SCREENSHOT APPLIED TO MOBILE TERMINAL - The present invention relates to computer technical field, and discloses a method and system for dynamic screenshot applied to mobile terminal, the mobile terminal includes a screen, the method includes: detecting an input dynamic screenshot starting command; responding to the dynamic screenshot starting command to continuous capture the contents displayed on the screen; detecting an input dynamic screenshot termination command; and responding to the dynamic screenshot termination command to terminate screenshot and stitch the continuous screenshot images together to form a dynamic video. The embodiments of the invention can capture and get a dynamic video and thereby expand the screenshot applications. | 11-06-2014 |
20140337699 | METHOD AND APPARATUS FOR EXTRACTING WEB PAGE CONTENT - Methods and apparatus for extracting web page content are provided herein. An exemplary method can be implemented by a mobile terminal. A request command to open a first web page can be received. Whether a source code contains text content tags can be determined. When the source code corresponding to the first web page contains the text content tags, text content of the first web page enclosed within the text content tags can be extracted by a reader. When the source code does not contain the text content tags, a start position and an end position to indicate the text content of the first web page can be identified in the source code. The text content tags can be respectively added after the start position and before the end position. The text content of the first web page enclosed within the text content tags can then be extracted. | 11-13-2014 |
20140351700 | APPARATUSES AND METHODS FOR RESOURCE REPLACEMENT - An apparatus may comprise at least one processor-readable non-statutory storage medium and at least one processor in communication with the at least one storage medium. The at least one medium may comprise at least one set of instructions for changing an audio-visual effect of a user interface on the apparatus. The at least one processor may be configured to execute the at least one set of instructions to obtain operating data associated with at least one of an acceleration input and acoustic input from a sensor of the terminal device; determine whether the operating data meet a preset condition; and replace a current audio-visual effect of a user interface (UI) with a selected audio-visual effect when the operating data meet the preset conditions. | 11-27-2014 |
20140351743 | METHOD AND SYSTEM FOR SUBSCRIBING READING FEED - Embodiments of the present disclosure disclose a method and system for subscribing reading feed. One of the method includes: detecting a subscription keyword command input by user from a reading software interface; the terminal responds to the subscription keyword command, and outputs a keyword subscribing interface; detecting a keyword input by user from the subscription keyword interface; searching a reading resources corresponding to the keyword from the reading feed associated with a reading software, and outputting the reading resources corresponding to the keyword; detecting the reading resources chosen by user from the output reading resources corresponding to the keyword, and generating the chosen reading resources to reading feed. Embodiments of the present disclosure can not only accurately provide the reading resources that users are interested in, but also enhance the users' enthusiasm for using the reading software. | 11-27-2014 |
20140354673 | METHOD AND SYSTEM FOR SIMULATING REAL-TIME PROCESSING OF VIRTUAL SCENE - Aspects of the invention are directed to method and system for simulating real-time processing of a virtual scene. The method includes acquiring a virtual scene; adding an effect to the virtual scene, and acquiring an effect scene; and invoking the effect scene so as to simulate real-time processing of the virtual scene. According to the invention, before the virtual scene is invoked, effect processing is performed on the virtual scene in advance according to effect requirements. When the virtual scene is invoked, an effect resulting from real-time processing of the virtual scene is simulated. Since there is no need for the computer where the computer game is played to perform processing in real time, the computer is not required to have very high performance capability to simulate real-time processing. Further, the virtual scene can be shown smoothly in a computer without very high performance configuration. | 12-04-2014 |
20140379821 | METHOD AND SYSTEM FOR SYNCHRONIZING DUPLICATED CONTENTS IN MULTIPLE TERMINALS - The present application discloses methods and systems for synchronizing duplicated contents between multiple terminals. By establishing a mapping relationship between multiple accounts for different application programs installed on different terminals, a server may transmit captured contents between the accounts so that the contents are displayed and/or further distributed. After receiving a content forwarding request from a second account associated with a browser application in a second terminal, the server may process the content forwarding request, which includes the captured contents and identifiers. Using the identifiers and the mapping relationship, the server may identify a first terminal with an instant messaging application having a first account. The captured contents may be transferred to the first account so that the captured contents may be displayed and/or further distributed. The present application provides additional convenience and efficiency for multi-terminal operations. | 12-25-2014 |
20140379824 | APPARATUSES AND METHODS FOR WEB PAGE SHARING - A method for web page sharing may include receiving, by at least one processor, a triggering operation executed on an interface of a current application running on a terminal device by a user of the terminal device; calling, by at least one processor, a sharing interface of a target application from the interface of the current application in response to the triggering operation; displaying, by at least one processor, a plurality of contacts of the user associated with the target application on the sharing interface of the target application; receiving, by at least one processor, a first selection operation from the user to select a contact of the user from the plurality of contacts; generating, by at least one processor, a sharing message in response to the first selection operation; and sending, by at least one processor, the sharing message to the selected contact through the server. | 12-25-2014 |
20150074517 | METHOD AND APPARATUS FOR DISPLAYING AN EXTENDED FUNCTION INFORMATION AREA - The present disclosure is applicable to the field of browser, and it provides a method and apparatus for displaying an extended function information area. The method comprises receiving an instruction for activating the extended function information area, acquiring a location where the extended function information area is to be displayed on a page according to the instruction; adjusting layout of the page according to the location and a predefined size of the extended function information area, so as to obtain a blank area on the page; and displaying the extended function information area in the blank area. According to embodiments of the present disclosure, the extended function information area is directly displayed, which enables the extended function information area to be displayed on the same layer as the page, ensures visual areas available to be browsed by users, and facilitates browsing of users. | 03-12-2015 |
20150128033 | METHOD AND APPARATUS FOR WEBPAGE BROWSING - A webpage browsing method is provided. The method includes receiving a web address entered by a user for a webpage to be displayed on a terminal device and sending webpage request information containing the received web address to a server based on the received web address. The method also includes receiving webpage information corresponding to the web address returned from the server, where the webpage information includes images, videos, Flash animations, source files and styles. Further, the method includes performing operations for saving network traffic volume on the webpage information based on the received webpage information and displaying the processed webpage information in a web browser. | 05-07-2015 |
20150220317 | METHOD, EQUIPMENT AND SYSTEM OF INCREMENTAL UPDATE - The disclosure discloses a method, equipment and system for incremental updates in the information processing technology. The method includes: unpacking a new version installation package to get a new version unpacked folder having a new version unpacked file and a new version signature subfolder having a new version unpacked file; obtaining header file information of the at least one new version unpacked, and converting a format of the header file information; packing the new version convert folder to a new version archive package and obtaining at one historical version archive package; generating and obtaining one differential file; and releasing the one differential file wherein the at least one differential file that is released is selected by a client that has memory and at least one processor to download and form a second new version installation package according to the at least one differential file that is downloaded. | 08-06-2015 |
20150332065 | METHOD AND APPARATUS FOR CONTROLLING A BROWSER - A method and apparatus for controlling a browser are provided. The method includes: acquiring a characteristic identifier of a user; comparing the characteristic identifier of the user with a pre-stored benchmark characteristic identifier to determine whether the characteristic identifier is identical to the benchmark characteristic identifier; if the characteristic identifier is identical to the benchmark characteristic identifier, entering a pre-set private browsing mode wherein a browser plug-in saves the browsing history data of the user; and when the user completes the browsing, receiving an instruction from the user to close the plug-in and exit the private browsing mode. The method and apparatus for controlling a browser save the browsing data of a user in private browsing mode and prevent other users from accessing such data without the correct characteristic identifier. | 11-19-2015 |
20150347462 | METHOD AND DEVICE FOR REPLACING THE APPLICATION VISUAL CONTROL - A method, device, and system are provided for change the application visual control. In the method: the terminal device obtains an image of a current scene. The terminal device performs intelligent matching on the image of the current scene and replaces the application visual control based on a result of intelligent matching. The system includes a device having a hardware processor and a non-transitory storage medium. The system also includes a database configured to store a plurality of subjects and corresponding pictures. | 12-03-2015 |