Patent application number | Description | Published |
20140161752 | PVOH COPOLYMERS FOR PERSONAL CARE APPLICATIONS - Various cosmetic compositions are disclosed that may be useful in face masks, epilatories, and pore strips. Also disclosed is a method of designing a cosmetic composition that may include: receiving a request to tailor a cosmetic composition to have a selected property or a selected property set. The method may be used to design and manufacture cosmetic compositions, such as epilatory compositions, face or skin care mask compositions used for cleansing and/or exfoliating the skin, and eyeliners, among others, having advantageous properties. | 06-12-2014 |
20140163134 | PVOH COPOLYMERS FOR PERSONAL CARE APPLICATIONS - Epilatory compositions may be formed from: 40 to 80 wt % water; 5 to 30 wt % of a mixture of at least one polyvinyl alcohol and at least one polyvinyl alcohol copolymer; 1 to 15 wt % plasticizer, where the plasticizer is a linear or branched composition having from 3 to 15 wt % OH; and up to 40 wt % of one or more additives. Pore strip, keratonic plug removal, and other cosmetic applications may be formed from a similar composition, where the plasticizer is a linear, cyclic, or branched composition having greater than 25 wt % OH; and up to 40 wt % of one or more additives. The adhesive properties of the formulations may be tailored, where a low OH content may result in increased adhesion relative to plasticizers having a high OH content. | 06-12-2014 |
Patent application number | Description | Published |
20100286277 | METHOD TO ENHANCE AQUEOUS SOLUBILITY OF POORLY SOLUBLE ACTIVES - A method to enhance solubility of an active compound comprises combining an active compound, having an aqueous solubility that is less than or equal to about 10 mg/mL, and an amount of methoxypolyethylene glycol that is sufficient to increase the aqueous solubility of the active compound. Enhancement of aqueous solubility for this combination may be significantly greater than that of an active compound in combination with an equivalent amount of polyethylene glycol. Particularly enhanced solubility is shown where a small amount of water is also included. The invention may be used in a wide variety of applications, such as for pharmaceutical, agricultural, antimicrobial, and personal care products. | 11-11-2010 |
20100288167 | LOW DIOL CONTENT MONOFUNCTIONAL ALKOXYPOLYALKYLENE GLYCOLS AND PROCESS FOR PRODUCING THEM - Provided is a process for preparing low diol content monofunctional polyalkylene glycols. The process includes introducing the initiator feed in two portions (a first and second initiator) and drying only the first initiator to remove water. The first and second initiators can be the same or different. Also provided are new monofunctional polyalkylene glycol compositions. | 11-18-2010 |
20120214385 | Polyalkylene Glycol-Grafted Polycarboxylate Suspension and Dispersing Agent for Cutting Fluids and Slurries - Cutting fluids for brittle materials, e.g., silicon ingot, comprise, in weight percent: A. 70-99% polyalkylene glycol (PAG), e.g., polyethylene glycol; B. 0.01-10% PAG-grafted polycarboxylate; and C. 0-30% water. These cutting fluids are used with abrasive materials, e.g., silicon carbide (SiC), to form cutting slurries. The slurry is sprayed on the cutting tool, e.g., a wire saw, to cut a brittle work piece, e.g., a silicon ingot. | 08-23-2012 |
Patent application number | Description | Published |
20080204695 | EUV Lithography System and Chuck for Releasing Reticle in a Vacuum Isolated Environment - A method for providing a vacuum isolated environment in a lithography system is disclosed. The method for dechucking a reticle includes providing a mask chamber having one or more vacuum valves for isolating the mask chamber from the lithography system. The one or more vacuum valves are closed to isolate the mask chamber from the rest of the lithography system. After the mask chamber is isolated, an inert gas is provided to the mask chamber to dechuck the reticle. | 08-28-2008 |
20090046273 | Systems and Methods for Monitoring and Controlling the Operation of Extreme Ultraviolet (EUV) Light Sources Used in Semiconductor Fabrication - Systems and methods for monitoring and controlling the operation of extreme ultraviolet (EUV) sources used in semiconductor fabrication are disclosed. A method comprises providing a semiconductor fabrication apparatus having a light source that emits in-band and out-of-band radiation, taking a first out-of-band radiation measurement, taking a second out-of-band radiation measurement, and controlling the in-band radiation of the light source, at least in part, based upon a comparison of the first and second out-of-band measurements. An apparatus comprises a detector operable to detect out-of-band EUV radiation emitted by an EUV plasma source, a spectrometer coupled to the electromagnetic detector and operable to measure at least one out-of-band radiation parameter based upon the detected out-of-band EUV radiation, and a controller coupled to the spectrometer and operable to monitor and control the operation of the EUV plasma source based upon the out-of-band measurements. | 02-19-2009 |
20100035431 | Reticle Stages for Lithography Systems and Lithography Methods - Reticle stages for lithography systems and lithography methods are disclosed. In a preferred embodiment, a lithography reticle stage includes a first region adapted to support a first reticle, and at least one second region adapted to support a second reticle. | 02-11-2010 |
20100066991 | Passivation of Multi-Layer Mirror for Extreme Ultraviolet Lithography - A reflector structure suitable for extreme ultraviolet lithography (EUVL) is provided. The structure comprises a substrate having a multi-layer reflector. A capping layer is formed over the multi-layer reflector to prevent oxidation. In an embodiment, the capping layer is formed of an inert oxide, such as Al | 03-18-2010 |
20100119981 | Passivation of Multi-Layer Mirror for Extreme Ultraviolet Lithography - A reflector structure suitable for extreme ultraviolet lithography (EUVL) is provided. The structure comprises a substrate having a multi-layer reflector. A capping layer is formed over the multi-layer reflector to prevent oxidation. In an embodiment, the capping layer is formed of an inert oxide, such as Al | 05-13-2010 |
20120069311 | Passivation of Multi-Layer Mirror for Extreme Ultraviolet Lithography - A reflector structure suitable for extreme ultraviolet lithography (EUVL) is provided. The structure comprises a substrate having a multi-layer reflector. A capping layer is formed over the multi-layer reflector to prevent oxidation. In an embodiment, the capping layer is formed of an inert oxide, such as Al | 03-22-2012 |
20120139117 | Dense Seed Layer and Method of Formation - A semiconductor device includes a workpiece and a first material layer disposed over the workpiece. The first material layer has a first number of atoms at a surface. A seed layer is disposed over the first material layer. The seed layer includes a chemisorbed monolayer of a second number of atoms at the surface having a surface coverage of at least 0.5 such that the ratio of the number of first atoms at the surface to the number of second atoms at the surface is no more than 2:1. The second atoms of the seed layer include oxygen or nitrogen. | 06-07-2012 |