Patent application number | Description | Published |
20100183902 | Magnetic memory devices and methods of manufacturing such magnetic memory devices - A magnetic memory device may include a first ferromagnetic layer, a second ferromagnetic layer, and a tunnel barrier layer arranged on a substrate. The tunnel barrier layer may include a crystal structure and may be arranged between the first ferromagnetic layer and the second ferromagnetic layer. At least the first ferromagnetic layer may include a first layer in contact with the tunnel barrier layer and a second layer in contact with the first layer, and an orientation of the first layer with respect to the tunnel barrier layer may be greater than an orientation of the second layer with respect to the tunnel barrier layer. | 07-22-2010 |
20110062537 | Magnetic Memory Devices - A magnetic memory device may include a first vertical magnetic layer, a non-magnetic layer on the first vertical magnetic layer, and a first junction magnetic layer on the non-magnetic layer, with the non-magnetic layer being between the first vertical magnetic layer and the first junction magnetic layer. A tunnel barrier may be on the first junction magnetic layer, with the first junction magnetic layer being between the non-magnetic layer and the tunnel barrier. A second junction magnetic layer may be on the tunnel barrier with the tunnel barrier being between the first and second junction magnetic layers, and a second vertical magnetic layer may be on the second junction magnetic layer with the second junction magnetic layer being between the tunnel barrier and the second vertical magnetic layer. | 03-17-2011 |
20110260272 | Magnetic Memory Device - A magnetic memory device is provided. The magnetic memory device includes a first vertical magnetic layer and a second vertical magnetic layer on a substrate, a tunnel barrier layer between the first vertical magnetic layer and the second vertical magnetic layer, and an exchange-coupling layer between a first sub-layer of the first vertical magnetic layer and a second sub-layer of the first vertical magnetic layer. | 10-27-2011 |
20110303996 | MAGNETIC MEMORY DEVICES - A magnetic memory device includes a reference magnetic layer having a fixed magnetization direction, a tunnel barrier layer on the reference magnetic layer, a free layer having a variable magnetization direction on the tunnel barrier layer opposite the reference magnetic layer, and a magnetization reversal auxiliary layer on the free layer. The magnetization reversal auxiliary layer has a fixed magnetization direction that is substantially perpendicular to a plane along an interface between the tunnel barrier layer and the reference layer. The magnetization reversal auxiliary layer may be directly on the free layer, or an exchange coupling control layer may be provided between the magnetization reversal auxiliary layer and the free layer. | 12-15-2011 |
20120018825 | MAGNETIC MEMORY DEVICES, ELECTRONIC SYSTEMS AND MEMORY CARDS INCLUDING THE SAME, METHODS OF MANUFACTURING THE SAME, AND METHODS OF FORMING A PERPENDICULAR MAGNETIC FILM OF THE SAME - Magnetic memory devices, electronic systems and memory cards including the same, methods of manufacturing the same, and methods of forming perpendicular magnetic films are provided. The magnetic memory device may include a seed pattern on a substrate having a first crystal structure, a perpendicular magnetic pattern on the seed pattern having a second crystal structure, and an interlayer pattern between the seed pattern and the perpendicular magnetic pattern. The interlayer pattern may reduce a stress caused by a difference between horizontal lattice constants of the first and the second crystal structures. | 01-26-2012 |
20120023386 | Magnetic Memory Devices, Electronic Systems And Memory Cards Including The Same, Methods Of Manufacturing The Same, And Methods Of Controlling A Magnetization Direction Of A Magnetic Pattern - Provided are magnetic memory devices, electronic systems and memory cards including the same, methods of manufacturing the same, and methods of controlling a magnetization direction of a magnetic pattern. In a magnetic memory device, atomic-magnetic moments non-parallel to one surface of a free pattern increase in the free pattern. Therefore, critical current density of the magnetic memory device may be reduced, such that power consumption of the magnetic memory device is reduced or minimized and/or the magnetic memory device is improved or optimized for a higher degree of integration. | 01-26-2012 |
20120112298 | MAGNETIC MEMORY DEVICES - A magnetic memory device includes a magnetic pattern, a reference pattern, a tunnel barrier pattern interposed between the magnetic pattern and the reference pattern, and at least one magnetic segment disposed inside the magnetic pattern. The magnetic segment(s) is/are of magnetic material whose direction of magnetization has at least a component which lies in a plane perpendicular to the magnetization direction of the magnetic pattern. | 05-10-2012 |
20120135544 | Method of Fabricating Semiconductor Device and Apparatus for Fabricating the Same - Provided is a method of fabricating a semiconductor device. The method of fabricating a semiconductor device includes forming a plurality of magnetic memory patterns spaced apart from each other on a substrate, with each of the magnetic memory patterns including a free pattern, a tunnel barrier pattern, and a reference pattern which are stacked on the substrate, performing a magnetic thermal treatment process on the magnetic memory patterns, and forming a passivation layer on the magnetic memory patterns. The magnetic thermal treatment process and the forming of the passivation layer are simultaneously performed in one reactor. | 05-31-2012 |
20130234269 | MAGNETIC MEMORY DEVICES INCLUDING MAGNETIC LAYERS SEPARATED BY TUNNEL BARRIERS - A magnetic memory device may include a first vertical magnetic layer, a non-magnetic layer on the first vertical magnetic layer, and a first junction magnetic layer on the non-magnetic layer, with the non-magnetic layer being between the first vertical magnetic layer and the first junction magnetic layer. A tunnel barrier may be on the first junction magnetic layer, with the first junction magnetic layer being between the non-magnetic layer and the tunnel barrier. A second junction magnetic layer may be on the tunnel barrier with the tunnel barrier being between the first and second junction magnetic layers, and a second vertical magnetic layer may be on the second junction magnetic layer with the second junction magnetic layer being between the tunnel barrier and the second vertical magnetic layer. | 09-12-2013 |
20130285178 | Magnetic Memory Device - A magnetic memory device is provided. The magnetic memory device includes a first vertical magnetic layer and a second vertical magnetic layer on a substrate, a tunnel barrier layer between the fist vertical magnetic layer and the second vertical magnetic layer, and an exchange-coupling layer between a first sub-layer of the first vertical magnetic layer and a second sub-layer of the first vertical magnetic layer. | 10-31-2013 |
20140021566 | MAGNETIC DEVICE AND METHOD OF FABRICATING THE SAME - Provided are a magnetic memory device and a method of fabricating the same. The device may include a magnetic tunnel junction including a lower magnetic structure, an upper magnetic structure, and a tunnel barrier interposed therebetween. The tunnel barrier may have a width greater than that of the lower magnetic structure. | 01-23-2014 |
20140183674 | MAGNETIC MEMORY DEVICES HAVING A UNIFORM PERPENDICULAR NONMAGNETIC RICH ANTISOTROPY ENHANCED PATTERN - Provided are magnetic memory devices, electronic systems and memory cards including the same, methods of manufacturing the same, and methods of controlling a magnetization direction of a magnetic pattern. In a magnetic memory device, atomic-magnetic moments non-parallel to one surface of a free pattern increase in the free pattern. Therefore, critical current density of the magnetic memory device may be reduced, such that power consumption of the magnetic memory device is reduced or minimized and/or the magnetic memory device is improved or optimized for a higher degree of integration. | 07-03-2014 |
20140191346 | MAGNETIC MEMORY DEVICES INCLUDING MAGNETIC LAYERS SEPARATED BY TUNNEL BARRIERS - A magnetic memory device may include a first vertical magnetic layer, a non-magnetic layer on the first vertical magnetic layer, and a first junction magnetic layer on the non-magnetic layer, with the non-magnetic layer being between the first vertical magnetic layer and the first junction magnetic layer. A tunnel barrier may be on the first junction magnetic layer, with the first junction magnetic layer being between the non-magnetic layer and the tunnel barrier. A second junction magnetic layer may be on the tunnel barrier with the tunnel barrier being between the first and second junction magnetic layers, and a second vertical magnetic layer may be on the second junction magnetic layer with the second junction magnetic layer being between the tunnel barrier and the second vertical magnetic layer. | 07-10-2014 |
20140339504 | MAGNETIC MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME - A magnetic memory device and method of manufacturing the same are provided. The magnetic memory device can include a first vertical magnetic pattern on a substrate, a second vertical magnetic pattern on the first vertical magnetic pattern, and a tunnel barrier pattern disposed between the first vertical magnetic pattern and the second vertical magnetic pattern. The first vertical magnetic pattern can include a first pattern on the substrate, a second pattern on the first pattern, and an exchange coupling pattern between the first pattern and the second pattern. The first pattern can comprise an amorphous magnetic substance and a component comprising at least one of platinum, palladium, and nickel. | 11-20-2014 |
20140353784 | MAGNETIC MEMORY DEVICE - A magnetic memory device is provided. The magnetic memory device includes a first vertical magnetic layer and a second vertical magnetic layer on a substrate, a tunnel barrier layer between the first vertical magnetic layer and the second vertical magnetic layer, and an exchange-coupling layer between a first sub-layer of the first vertical magnetic layer and a second sub-layer of the first vertical magnetic layer. | 12-04-2014 |
20150008549 | MAGNETIC MEMORY DEVICES HAVING JUNCTION MAGNETIC LAYERS AND BUFFER LAYERS AND RELATED METHODS - A magnetic memory device may include a free magnetic structure, a tunnel barrier layer, and a pinned magnetic structure wherein the tunnel barrier layer is between the free magnetic structure and the pinned magnetic structure. The pinned magnetic structure may include first and second pinned layers and an exchange coupling layer between the first and second pinned layers. The second pinned layer may be between the first pinned layer and the tunnel barrier layer, and the second pinned layer may include a junction magnetic layer and a buffer layer between the junction magnetic layer and the exchange coupling layer. The buffer layer may include a layer of a material including a non-magnetic metallic element. Related devices, structures, and methods are also discussed. | 01-08-2015 |
20150035095 | MAGNETIC MEMORY DEVICES HAVING A PERPENDICULAR MAGNETIC TUNNEL JUNCTION - A magnetic memory device may include a free magnetic structure and a reference magnetic structure that are separated from each other by a tunnel barrier. The free magnetic structure may include an exchange-coupling layer, and first and second free layers that are separated from each other by the exchange-coupling layer. The first free layer may be provided between the second free layer and the tunnel barrier. A thickness of the first free layer may be greater than a first maximum anisotropy thickness, being the thickness at which the first free layer has maximum perpendicular anisotropy. A thickness of the second free layer may be smaller than a second maximum anisotropy thickness, being the thickness at which the second free layer has maximum perpendicular anisotropy. A magnetic tunnel junction having two free layers with different thicknesses can enable a magnetic memory device that has increased MR ratio and reduced switching current. | 02-05-2015 |