Woo Sik
Woo Sik Jang, Seoul KR
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20150186815 | SYSTEM AND METHOD FOR ANALYSING BUSINESS ENVIRONMENT OF OVERSEAS GAS PLANT PROJECT - A system for analyzing country's business environment of an overseas gas field development project includes a political system stability assessment section configured to calculate a political system stability index; a business execution stability assessment section configured to respectively calculate a general business execution stability index, an upstream expected reward index, a downstream expected reward index, and a business promotion condition index; and an overall business environment assessment section configured to calculate a business environment index, based on the political system stability index, the business execution stability index, the upstream expected reward index, the downstream expected reward index and the business promotion condition index. | 07-02-2015 |
20150186816 | SYSTEM AND METHOD FOR ASSESSING SUSTAINABILITY OF OVERSEAS GAS FIELD - A system for assessing sustainability of an overseas gas field development project includes a gas field factor analysis section configured to calculate assessment values for components of gas, expected reserves, ratio of NGL (natural gas liquid)/condensate, and infrastructure accessibility; a financial factor analysis section configured to calculate assessment values for independent oil company (IOC) share ratio, past collaboration experience, business execution experience, and favorable investment ratio; an organization factor analysis section configured to calculate assessment values for development business execution experience, securement level of expertise, the owner's risk, and securement level of dealer; and a sustainability index calculation section configured to calculate a sustainability index, based on the assessment values. | 07-02-2015 |
Woo Sik Jeon, Seoul KR
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20100176380 | ORGANIC PHOTOELECTRIC DEVICE AND MATERIAL USED THEREIN - The present invention relates to an organic photoelectric device and a material used therein. The organic photoelectric device includes a substrate, an anode disposed on the substrate, a hole transport layer (HTL) disposed on the anode, an emission layer disposed on the hole transport layer (HTL), and a cathode disposed on the emission layer. The emission layer is characterized in that it includes a host and a phosphorescent dopant, and the host has a difference between the reduction potential or oxidation potential of the host and the reduction potential or oxidation potential of the phosphorescent dopant of less than 0.5 eV. The organic photoelectric device according to the present invention is capable of accomplishing higher efficiency and a lower driving voltage than those of the conventional organic photoelectric device, and has a simplified structure resulting in saving of manufacturing cost. | 07-15-2010 |
Woo Sik Jun, Asan-Si KR
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20140346447 | LIGHT EMITTING DISPLAY AND METHOD FOR MANUFACTURING THE SAME - A light emitting device includes a pixel defining layer including a plurality of pixel defining layer elements, on a substrate; a first electrode in a space defined by the substrate and the pixel defining layer; a light emitting layer in a space defined by the first electrode and the pixel defining layer; and a second electrode on the light emitting layer and the pixel defining layer. The second electrode includes a plurality of layers, and an insulating layer between the plurality of layers, overlapping the light emitting layer, and exposing a layer among the plurality of layers in an area corresponding to the pixel defining layer. | 11-27-2014 |
Woo Sik Jung, Daejeon KR
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20100082318 | SINGLE QUANTIFICATION METHOD OF EXTERNAL EVENT PSA MODEL CONTAINING MULTI-COMPARTMENT PROPAGATION SCENARIOS - Provided is a single quantification method of an external event PSA model containing multi-compartment scenarios, including: loading an internal event PSA logic model having core damage as a top event; constituting a mapping table comprising external events containing the multi-compartment scenarios in consideration of information regarding external event occurrence frequencies, external event-induced initiators, and equipments damaged by external events; reflecting the mapping table in the internal event PSA logic model to establish an external event PSA model; calculating a final minimum cut set (MCS) based on the external event PSA model; and calculating a core damage frequency (CDF) value according to the final MCS. | 04-01-2010 |
Woo Sik Kim, Hwaseong-Si KR
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20130166783 | METHOD FOR CONTROLLING INTERFACE OPERATION AND INTERFACE DEVICE APPLYING THE SAME - Methods for controlling an interface operation, the method including stopping an operation being processed in a storage device and switching the state of the storage device to a first state, when a condition for switching the state of the storage device to an idle state occurs in a command processing process according to a communication protocol; performing an operation of deleting information from a previous command stored in hardware of the storage device when the state of the storage device is switched to the first state; and switching the state of the storage device to the idle state after the operation of deleting the information on the previous command is completed, wherein in the first state, the storage device cannot be switched to the first state before the information from the previous command is deleted. | 06-27-2013 |
Woo Sik Kim, Seoul KR
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20160104879 | METHOD FOR PREPARING CORE-SHELL STRUCTURED PARTICLE BY USING CONTINUOUS COUETTE-TAYLOR CRYSTALLIZER - The present invention provides a method for preparing a core-shell structured particle, the method using a continuous Couette-Taylor crystallizer in which a core reactant inlet, a shell reactant inlet, and a product outlet are sequentially formed on an outer cylinder along a flow direction of a fluid flowing in a Couette-Taylor fluid passage between the outer cylinder and an inner cylinder, wherein a core particle is primarily formed in the fluid passage by a core reactant supplied through the core reactant inlet; a shell layer is formed on a surface of the core particle to cover the core particle by a shell reactant supplied through the shell reactant inlet; and a core-shell structured particle in which the shell layer is formed on the circumference of the core particle, is discharged to the outside through the product outlet. | 04-14-2016 |
Woo Sik Lee, Yongin-Si KR
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20160052052 | METHOD FOR PRODUCING ALLUMINUM ALLOY - A method for producing an aluminum alloy, comprises: separately preparing an aluminum or aluminum alloy matrix and an aluminum nitride-aluminum composite; melting the matrix, and adding the aluminum nitride-aluminum composite to the molten matrix to prepare a melt; and casting the melt. | 02-25-2016 |
Woo Sik Lim, Seoul KR
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20110062480 | SEMI-CONDUCTOR LIGHT-EMITTING DEVICE - Disclosed is a semiconductor light emitting device. The semiconductor light emitting device includes a first conductive semiconductor layer, an active layer under the first conductive semiconductor layer, a second conductive semiconductor layer under the active layer, a second electrode layer under the second conductive semiconductor layer; and an insulating layer on an outer peripheral surface of at least two layers of the first conductive semiconductor layer, the active layer, and the second conductive semiconductor layer. | 03-17-2011 |
20110140161 | LIGHT EMITTING DEVICE, LIGHT EMITTING DEVICE AND PACKAGE, AND LIGHTING SYSTEM - Provided are a light emitting device, a light emitting device package, and a lighting system. The light emitting device comprises a light emitting structure layer comprising a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer between the first conductive type semiconductor layer and the second conductive type semiconductor layer, and an electrode comprising a pad part and a finger part on the light emitting structure layer. The pad part comprises a pattern in which at least one opening is defined, and the finger part comprises a pattern electrically connected to the pad part and linearly extending from the pad part. | 06-16-2011 |
20110198563 | LIGHT EMITTING DEVICE, LIGHT EMITTING DEVICE PACKAGE AND LIGHTING SYSTEM HAVING THE SAME - A light emitting device includes a light emitting structure including a first conductive type semiconductor layer, an active layer on the first conductive type semiconductor layer, and a second conductive type semiconductor layer on the active layer; and a transparent electrode layer formed at least one of on and under the light emitting structure, wherein the transparent electrode layer has a thickness in a range of 30 nm to 70 nm to obtain a transmittance equal to or greater than 70% with respect to a wavelength range of light of 420 nm to 510 nm. | 08-18-2011 |
20110204399 | LIGHT EMITTING DEVICE, METHOD OF MANUFACTURING THE LIGHT EMITTING DEVICE, LIGHT EMITTING DEVICE PACKAGE, AND LIGHTING SYSTEM - A light emitting device includes a substrate, at least one electrode, a first contact layer, a second contact layer, a light emitting structure layer, and an electrode layer. The electrode is disposed through the substrate. The first contact layer is disposed on a top surface of the substrate and electrically connected to the electrode. The second contact layer is disposed on a bottom surface of the substrate and electrically connected to the electrode. The light emitting structure layer is disposed above the substrate at a distance from the substrate and electrically connected to the first contact layer. The light emitting structure layer includes a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer. The electrode layer is disposed on the light emitting structure layer. | 08-25-2011 |
20110204403 | LIGHT EMITTING DEVICE, LIGHT EMITTING DEVICE PACKAGE, AND LIGHTING SYSTEM - Provided are a light emitting device, a light emitting device package, and a lighting system. The light emitting device includes a substrate, a light emitting structure layer, a second electrode, a first electrode, a contact portion, and a first electrode layer. The first electrode is disposed in the substrate from a lower part of the substrate to a lower part of a first conductive type semiconductor layer in a region under an active layer. The contact portion is wider than the first electrode and makes contact with the lower part of the first conductive type semiconductor layer. The first electrode layer is disposed under the substrate and connected to the first electrode. | 08-25-2011 |
20110210345 | LIGHT EMITTING DEVICE, LIGHT EMITTING DEVICE PACKAGE, AND LIGHTING SYSTEM - Provided is a light emitting device. The light emitting device includes a light emitting structure layer comprising a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer, a first electrode connected to the first conductive type semiconductor layer, a current spreading layer on the second conductive type semiconductor layer, an insulation layer on the first electrode, and a second electrode comprising at least one bridge portion on the insulation layer and a first contact portion contacting at least one of the second conductive type semiconductor layer and the current spreading layer. | 09-01-2011 |
20110254035 | LIGHT EMITTING DEVICE, LIGHT EMITTING DEVICE PACKAGE, AND ILLUMINATION SYSTEM - Disclosed are a light emitting device, a light emitting device package, and an illumination system. The light emitting device includes a substrate; a light emitting structure layer including a first conductive type semiconductor layer formed on the substrate and having first and second upper surfaces, in which the second upper surface is closer to the substrate than the first upper surface, an active layer on the first conductive type semiconductor layer, and a second conductive type semiconductor layer on the active layer; a second electrode on the second conductive type semiconductor layer; and at least one first electrode extending at least from the second upper surface of the first conductive type semiconductor layer to a lower surface of the substrate by passing through the substrate. | 10-20-2011 |
20110254036 | LIGHT EMITTING DEVICE, METHOD OF MANUFACTURING THE SAME, LIGHT EMITTING DEVICE PACKAGE, AND LIGHTING SYSTEM - Disclosed is a light emitting device. The light emitting device includes a light emitting structure layer including a first conductive type semiconductor layer, an active layer on the first conductive type semiconductor layer, and a second conductive type semiconductor layer on the active layer, a first light extracting structure formed on an outer portion of the first conductive type semiconductor layer and having a plurality of side surfaces and a plurality of upper surfaces formed in a step structure, and a transmissive layer on the first light extracting structure of the first conductive type semiconductor layer. | 10-20-2011 |
20110309383 | LIGHT EMITTING DEVICE, LIGHT EMITTING DEVICE PACKAGE, AND LIGHTING SYSTEM - Provided are a light emitting device, a light emitting device package, and a lighting system. The light emitting device includes a crystalline substrate having a plurality of side surfaces, a light emitting structure layer comprising a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer on the substrate, and a first electrode on the first conductive type semiconductor layer and a second electrode on the second conductive type semiconductor layer. An amorphous region is defined in a side surface of the substrate, and the amorphous regions of two sides adjacent to each other have different depths from a top surface of the substrate. | 12-22-2011 |
20130320389 | SEMICONDUCTOR LIGHT-EMITTING DEVICE - Disclosed is a semiconductor light emitting device. The semiconductor light emitting device includes a first conductive semiconductor layer, an active layer under the first conductive semiconductor layer, a second conductive semiconductor layer under the active layer, a second electrode layer under the second conductive semiconductor layer; and an insulating layer on an outer peripheral surface of at least two layers of the first conductive semiconductor layer, the active layer, and the second conductive semiconductor layer. | 12-05-2013 |
20150034999 | LIGHT EMITTING DEVICE, LIGHT EMITTING DEVICE PACKAGE, AND LIGHTING SYSTEM - Provided is a light emitting device. The light emitting device includes a light emitting structure layer comprising a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer. A first electrode is connected to the first conductive type semiconductor layer and includes first pad, plurality of first bridge portions and plurality of first contact portions. A current spreading layer is on a top surface of the second conductive type semiconductor layer. An insulation layer is on an upper surface of the first conductive type semiconductor layer and a top surface of the current spreading layer. A second electrode is on a top surface of the current spreading layer. The plurality of first bridge portions are extended from the first pad at an acute angle to each other. | 02-05-2015 |
20150048405 | LIGHT EMITTING DEVICE, LIGHT EMITTING DEVICE PACKAGE, AND LIGHTING SYSTEM - Provided are a light emitting device, a light emitting device package, and a lighting system. The light emitting device includes a substrate, a light emitting structure layer, a second electrode, a first electrode, a contact portion, and a first electrode layer. The first electrode is disposed in the substrate from a lower part of the substrate to a lower part of a first conductive type semiconductor layer in a region under an active layer. The contact portion is wider than the first electrode and makes contact with the lower part of the first conductive type semiconductor layer. The first electrode layer is disposed under the substrate and connected to the first electrode. | 02-19-2015 |
Woo Sik Nam, Seoul KR
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20150214497 | NONVOLATILE MEMORY DEVICE - Provided is a nonvolatile memory device. The nonvolatile memory device includes: first and second electrodes spaced from each other; at least one nano crystal layer disposed between the first and second electrodes; and first and second material layers respectively disposed between the first and second electrodes and the nano crystal layer and having a bistable conductive property, wherein the first and second material layers are formed asymmetrical to each other. | 07-30-2015 |
Woo-Sik Cho, Seoul KR
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20090161047 | COLOR FILTER SUBSTRATE FOR LIQUID CRYSTAL DISPLAY AND METHOD FOR MANUFACTURING THE SAME - A color filter substrate for a liquid crystal display (LCD) includes a substrate having a non-pixel region and a pixel region, a black matrix and a light blocking color filter layered in the non-pixel region, and a color filter arranged in the pixel region. The light blocking color filter may be formed simultaneously with the color filter, and may include color filter material having light blocking properties at various wavelengths to supplement the light blocking properties of the black matrix. The light blocking color filter occupies a portion of the non-pixel region and has a thickness so that the black matrix in the non-pixel region may have a thickness that is less than a thickness of the color filter arranged in the pixel region. | 06-25-2009 |
Woo-Sik Jung, Gyeonggi-Do KR
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20100295827 | DISPLAY DEVICE AND METHOD OF ADJUSTING VIEWING ANGLE THEREOF - A display device for selectively adjusting a viewing angle thereof and a method of adjusting a viewing angle thereof are provided. The display device comprises: a display unit displaying an input image based on a determined viewing angle; and a controlling unit determining a viewing angle of the display unit according to a predetermined viewing condition and controlling to display the input image with the determined viewing angle, wherein the viewing condition is one of a viewer position condition, an image type condition, and a viewer setting condition. | 11-25-2010 |
20150286547 | INTEGRATED CIRCUIT AND METHOD FOR TESTING SEMICONDUCTOR DEVICES USING THE SAME - An integrated circuit includes first to third failure information storage units, an input selection unit suitable for alternately storing plural pieces of failure information in the first and second failure information storage units generated whenever each of a plurality of tests is performed on a device under test (DUT), and a storage selection unit suitable for relocating the plural pieces of failure information from the first or second failure information storage unit that was not selected by the input selection unit, to the third failure information storage unit while excluding overlapping failure information from relocating. | 10-08-2015 |
Woo-Sik Kim, Incheon KR
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20090125765 | Apparatus for Certifying Hardware Abstraction Layer in Mobile Terminal and Method Thereof - Provided is an apparatus and method for certifying a hardware abstraction layer in a mobile terminal. The apparatus includes: a communication unit for receiving a predetermined test case from an external host certifying system and transmitting a test result of performing the received test cast to the host certifying system; an event receiver for receiving a test result of performing an event type test case from a hardware abstraction layer; and a controller for controlling the hardware abstraction layer to perform the test case received through the communication unit, and receiving the test result of performing the received test case received from the event receiver or the hardware abstraction layer and transmitting the received test result to the host certifying system. | 05-14-2009 |
20150321215 | METHOD OF PREPARING LARGE-AREA, THREE-DIMENSIONAL GRAPHENE TRANSPARENT ELECTRODE USING ELECTROSPRAY PROCESS AND LARGE-AREA, THREE-DIMENSIONAL GRAPHENE TRANSPARENT ELECTRODE PREPARED THEREFROM - Provided are a method of preparing a large-area, three-dimensional graphene transparent electrode using an electrospray deposition method and a large-area, three-dimensional graphene transparent electrode prepared therefrom. More particularly, the present invention is related to a method of preparing a large-area, three-dimensional graphene transparent electrode using an electrospray deposition method, which may easily prepare a large-area graphene transparent electrode having high transparency and conductivity through an electrospray process and may obtain effects, which may not be realized in a two-dimensional transparent electrode prepared by a typical method such as CVD, due to a three-dimensional stack structure in which graphene is arranged perpendicular to a substrate, and a large-area, three-dimensional graphene transparent electrode prepared therefrom. | 11-12-2015 |
20160068654 | Electrospinning solution Composition for Preparing Silver Nanofiber - The present invention relates to an electrospinning solution composition for fabricating a silver nanofiber, and more particularly to an electrospinning solution composition for fabricating a silver nanofiber through a spinning process, the electrospinning solution including a silver precursor, a reducing agent, a viscosity modifier, and a solvent wherein the viscosity modifier includes one selected from the group consisting of dextran, alginate, chitosan, guar gum, starch, carboxymethyl cellulose, hydroxyethyl cellulose, hydroxypropyl methylcellulose, xanthan gum, a carboxyvinyl polymer, pectin, sodium alginate, and a combination thereof. | 03-10-2016 |
Woo-Sik Kim, Gyeonggi-Do KR
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20080211059 | ELECTRONIC FUSE HAVING HEAT SPREADING STRUCTURE - A semiconductor device includes a fuse transistor for fuse programming and a fuse block connected to the fuse transistor, wherein the fuse block comprises a fuse line and a heat spreading structure connected to the fuse line. The electrical fuse employs the heat spreading structure connected to the fuse line to prevent a rupture of the electrical fuse such that heat, which is generated in the fuse line during a blowing of the fuse line, is spread throughout the heat spreading structure. Thus, a sensing margin of the electrical fuse can be secured and a deterioration of devices adjacent to the electrical fuse by heat generated in the electrical fuse can be prevented. | 09-04-2008 |
Woo-Sik Kim, Yongin-Si KR
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20080204516 | INKJET HEAD ASSEMBLY AND PRINTING APPARATUS AND METHOD USING THE SAME - An inkjet head assembly and a printing method using the same. The inkjet head assembly includes an ultraviolet (UV) emitting unit to emit UV light, and a printhead to move together with the UV emitting unit and to eject ink through nozzles using inkjet technology. | 08-28-2008 |
Woo-Sik Lee, Seoul KR
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20120099579 | ZIGBEE GATEWAY AND IP SERVICE SERVER INTERWORKING WITH ZIGBEE GATEWAY THROUGH IP NETWORK - A Zigbee gateway connected to a Zigbee node by a Zigbee network and connected to an IP service server through an IP network includes a primitive transport layer module and a Zigbee network layer module. The primitive transport layer module of the Zigbee gateway extracts first data from a first primitive frame packet transferred through the IP network from the IP service server. The Zigbee network layer module receives the first data from the primitive transport layer module and transfers the first data to a Zigbee node. The IP service server interworking with the Zigbee gateway through the IP network includes a primitive transport layer module and a Zigbee application layer module. The primitive transport layer module of the IP service server extracts first data from a first primitive frame packet transferred through the IP network from the Zigbee gateway. The Zigbee application layer module receives the first data from the primitive transport layer module. | 04-26-2012 |
Woo-Sik Nam, Ichon-Shi KR
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20090040805 | NON-VOLATILE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME - A non-volatile memory device includes lower and upper electrodes over a substrate, a conductive organic material layer between the lower and the upper electrodes, and a nanocrystal layer located within the conductive organic material layer, wherein the nanocrystal layer includes a plurality of nanocrystals surrounded by an amorphous barrier, wherein the device has a multi-level output current according to a voltage level of an input voltage coupled to the lower and the upper electrodes during a data read operation. | 02-12-2009 |
20120044767 | NON-VOLATILE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME - A non-volatile memory device includes a plurality of unit cells. Each unit cell includes lower and upper electrodes over a substrate, a conductive organic material layer between the lower and the upper electrodes, and a nanocrystal layer located within the conductive organic material layer, wherein the nanocrystal layer includes a plurality of nanocrystals surrounded by an amorphous barrier. A read operation is performed when an input voltage is in a first voltage range. A first write operation is performed when the input voltage is in a second voltage range higher than the first voltage range. A second write operation is performed when the input voltage is in a third voltage range higher than the second voltage range. An erase operation is performed when the input voltage is higher than the third voltage range. | 02-23-2012 |