Patent application number | Description | Published |
20090157372 | METHOD AND APPARATUS FOR MODELING SOURCE-DRAIN CURRENT OF THIN FILM TRANSISTOR - Provided are a method and apparatus for modeling source-drain current of a TFT. The method includes receiving sample data, the sample data including a sample input value and a sample output value; adjusting modeling variables according to the sample data; calculating a current model value according to the adjusted modeling variables; when a difference between the calculated current model value and the sample output value is smaller than a predetermined threshold value, fitting a current model by applying the adjusted modeling variables to the current model; applying actual input data to the fitted current model; and outputting a result value corresponding to the actual input data, wherein the current model is a model for predicting the source-drain current of the TFT. | 06-18-2009 |
20100006837 | COMPOSITION FOR OXIDE SEMICONDUCTOR THIN FILM, FIELD EFFECT TRANSISTOR USING THE COMPOSITION AND METHOD OF FABRICATING THE TRANSISTOR - Provided are a composition for an oxide semiconductor thin film, a field effect transistor using the same and a method of fabricating the field effect transistor. The composition includes an aluminum oxide, a zinc oxide, an indium oxide and a tin oxide. The thin film formed of the composition is in amorphous phase. The field effect transistor having an active layer formed of the composition can have an improved electrical characteristic and be fabricated by a low temperature process. | 01-14-2010 |
20100019239 | METHOD OF FABRICATING ZTO THIN FILM, THIN FILM TRANSISTOR EMPLOYING THE SAME, AND METHOD OF FABRICATING THIN FILM TRANSISTOR - Provided are a method of fabricating a zinc-tin-oxide (ZTO) thin film, a thin film transistor employing the same, and a method of fabricating a thin film transistor. The method of fabricating a ZTO thin film includes depositing zinc oxide and tin oxide at a deposition temperature of 450° C. or lower so that a zinc-to-tin atomic ratio is 4:1 or greater, to form an amorphous ZTO thin film. In the thin film transistor, the ZTO thin film is used as a channel layer. | 01-28-2010 |
20100096619 | ELECTRONIC DEVICES USING CARBON NANOTUBES HAVING VERTICAL STRUCTURE AND THE MANUFACTURING METHOD THEREOF - Provided are an electronic device to which vertical carbon nanotubes (CNTs) are applied and a method of manufacturing the same. The method of manufacturing an electronic device having a vertical CNT includes the steps of: (a) preparing a substrate on which a silicon source is formed; (b) forming a first insulating layer on the substrate, and etching the first insulating layer such that a top surface of the silicon source is exposed; (c) forming a second insulating layer on the silicon source, and forming a gate by patterning the second insulating layer; (d) forming a third insulating layer on the gate, and forming a through hole in which a carbon nanotube channel is to be formed by etching the third insulating layer and the second insulating layer; (e) forming a fourth insulating layer surrounding the gate on the through hole and the third insulating layer, and forming a spacer by etching the fourth insulating layer; (f) forming a metal catalyst on the silicon source; (g) vertically growing the carbon nanotube channel on the silicon source using the metal catalyst; (h) forming a fifth insulating layer on the through hole in which the carbon nanotube is formed and the third insulating layer; and (i) patterning the fifth insulating layer such that the carbon nanotube channel is exposed, and forming a silicon drain. An arrangement problem of horizontal CNTs can be solved by applying vertical CNTs and a selective silicon growth technique. | 04-22-2010 |
20100155716 | THIN FILM TRANSISTOR USING BORON-DOPED OXIDE SEMICONDUCTOR THIN FILM AND METHOD OF FABRICATING THE SAME - Provided are a thin film transistor, to which a boron-doped oxide semiconductor thin film is applied as a channel layer, and a method of fabricating the same. The thin film transistor includes source and drain electrodes, a channel layer, a gate insulating layer, and a gate electrode, which are formed on a substrate. The channel layer is an oxide semiconductor thin film doped with boron. Therefore, it is possible to remarkably improve electrical characteristics and high temperature stability of the thin film transistor. | 06-24-2010 |
20100258437 | APPARATUS FOR REACTIVE SPUTTERING DEPOSITION - Provided is a reactive sputtering apparatus, and more particularly, a reactive sputtering apparatus capable of effectively ionizing a reactive gas using inductively coupled plasma (ICP). The reactive sputtering apparatus includes: a chamber having an inlet port for introducing a plasma gas thereinto and an outlet port for exhausting the gas used during reactive sputtering to the exterior; an ICP generator disposed on the chamber, ionizing a reactive gas, and injecting the ionized gas into the chamber; and at least one sputter gun located at a side surface of the chamber and supporting a target. Therefore, the reactive sputtering apparatus can improve an ionization rate of a reactive gas using inductively coupled plasma to reduce a process temperature and improve uniformity and step coverage of thin film deposition at low cost. | 10-14-2010 |
20110140097 | THIN FILM TRANSISTOR AND METHOD OF FABRICATING THE SAME - Provided are a thin film transistor in which an oxide semiconductor combined with a nitride containing boron or aluminum is applied to a channel layer and a method of fabricating the same. The thin film transistor in which an oxide semiconductor combined with a nitride containing boron or aluminum is applied to a channel layer exhibits significantly improved mobility and increased stability at a high temperature. | 06-16-2011 |
20110147735 | THIN FILM TRANSISTOR AND METHOD OF FORMING THE SAME - Provided are a thin film transistor and a method of forming the same. The thin film transistor includes: a substrate; a source electrode and a drain electrode on the substrate; an oxide active layer between the source electrode and the drain electrode; a gate electrode on one side of the oxide active layer; a gate dielectric layer between the gate electrode and the oxide active layer; and a buffer layer between the gate dielectric layer and the oxide active layer. | 06-23-2011 |
20110272279 | APPARATUS FOR MANUFACTURING SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE BY USING THE SAME - In a process for manufacturing a hyperfine semiconductor device, an apparatus for manufacturing a semiconductor device such as a schottky barrier MOSFET and a method for manufacturing the semiconductor device using the same are provided. Two chambers are connected with each other. A cleaning process, a metal layer forming process, and subsequent processes can be performed in situ by using the two chambers, thereby the attachment of the unnecessary impurities and the formation of the oxide can be prevented and the optimization of the process can be accomplished. | 11-10-2011 |
20120090543 | THIN FILM DEPOSITING APPARATUS - Provided is a thin film depositing apparatus. The thin film depositing apparatus includes: a loading chamber loading a plurality of substrates; a first process chamber connected to the loading chamber and including a plurality of sputter guns inducing a first plasma on the plurality of substrates; a buffer chamber connected to the other side of the first process chamber facing the loading chamber; and a substrate transfer module simultaneously passing the plurality of substrates between the plurality of sputter guns during a process using the first plasma and transferring the plurality of substrates from the first process chamber to the buffer chamber. | 04-19-2012 |
20120103259 | THIN FILM DEPOSITING APPARATUS - Provided is a thin film depositing apparatus. The thin film depositing apparatus includes: a process chamber including at least one sputter gun inducing a first plasma on a film or a flat plate; a loading unit provided at one side of the process chamber and including first and second loading chambers loading the film or the flat plate into the process chamber; and an unloading unit provided at the other side of the process chamber facing the loading unit and including first and second loading chambers including first and second unloading chambers unloading the film or the flat plate from the process chamber, wherein the first loading chamber is connected to the first unloading chamber or the second loading chamber is connected to the second unloading chamber at both sides of the process chamber. | 05-03-2012 |
20120103802 | THIN FILM DEPOSITING APPARATUS - Provided is a thin film depositing apparatus. The thin film depositing apparatuses includes: a chamber where a process is performed on a subject to be processed; a plurality of supporters supporting the subject to be processed in the chamber; at least one sputter gun inducing a first plasma below or on the subject to be processed between the plurality of supporters; and a plurality of inductive coupled plasma tubes inducing a more expanded second plasma than the first plasma between the sputter gun and the subject to be processed. | 05-03-2012 |
20120297351 | METHODS OF MODELING A TRANSISTOR AND APPARATUS USED THEREIN - Methods of modeling a transistor are provided. The method includes the steps of (a) extracting reference mobility values of a channel layer of a transistor including a gate electrode, a source region and a drain region using a reference gate voltage, a reference drain current and a reference drain voltage, (b) fitting a mobility function including model parameters on the reference mobility values to extract the model parameters, and (c) putting the extracted model parameters into a drain current modeling function to calculate a drain current flowing through the channel layer between the drain region and the source region under a bias condition defined by an arbitrary gate voltage applied to the gate electrode and an arbitrary drain voltage applied to the drain region. Related apparatuses are also provided. | 11-22-2012 |
20120298985 | THIN FILM TRANSISTOR AND METHOD OF FABRICATING THE SAME - Provided are a thin film transistor able to increase or maximize productivity and production yield, and a method of fabricating the same. The method of fabricating the thin film transistor includes forming a gate electrode on a substrate, forming a gate insulating layer on the gate electrode, forming an active layer formed of an amorphous oxide semiconductor on the gate insulating layer, and respectively forming a source electrode and a drain electrode on both sides of the active layer above the gate electrode. The amorphous oxide semiconductor of the active layer may be doped with a metal oxide dielectric. | 11-29-2012 |
20130016054 | TOUCH SCREEN PANELAANM Cheong; Woo-SeokAACI DaejeonAACO KRAAGP Cheong; Woo-Seok Daejeon KRAANM Shin; JaeheonAACI DaejeonAACO KRAAGP Shin; Jaeheon Daejeon KR - Touch screen panels are provided. The touch screen panel may include a first hybrid electrode including first electrode cells arranged on a substrate in a first direction and first connection electrodes connecting the first electrode cells to each other in the first direction, and a second hybrid electrode spaced apart from the first hybrid electrode on the substrate. The second hybrid electrode may include second electrode cells arranged in a second direction crossing the first direction and second connection electrodes connecting the second electrode cells to each other in the second direction. The second electrode cells are disposed between the first connection electrodes. The first hybrid electrode may include a first lower transparent layer and a first metal layer which are sequentially stacked, and the second hybrid electrode may include a second lower transparent layer and a second metal layer which are sequentially stacked. | 01-17-2013 |
20130133735 | SOLAR CELL MODULE AND METHOD OF MANUFACTURING THE SAME - Provided are a solar cell module and a method of manufacturing the same. The solar cell module including: a substrate; a bottom electrode layer discontinuously formed on the substrate; a light absorbing layer formed on the bottom electrode layer and including a first trench that exposes the bottom electrode layer; and a transparent electrode layer extending from the top of the light absorbing layer to the bottom electrode layer at the bottom of the first trench, and including a first oxide layer, a metal layer, and a second oxide layer, all of which are staked on the light absorbing layer and the bottom electrode layer. | 05-30-2013 |
20130137208 | METHOD FOR MANUFACTURING SOLAR CELL MODULE - Provided is a method of manufacturing a solar cell module The method includes: forming a bottom electrode layer on a substrate; forming a light absorbing layer on the bottom electrode layer and the substrate; forming a first trench that exposes the bottom electrode layer by patterning the light absorbing layer; and forming a window electrode layer that extends from the top of the light absorbing layer to the bottom of the bottom of the first trench, wherein the window electrode layer is formed through an ionized physical vapor deposition method. | 05-30-2013 |
20130266724 | METHOD OF MANUFACTURING TOUCH SCREEN PANEL - Provided is a method of manufacturing a touch screen panel. The method of manufacturing the touch screen panel includes preparing a substrate including a cell region and an interconnection region formed around the cell region, forming bridge electrodes arranged at a predetermined distance on the cell region of the substrate, forming an insulation layer on the substrate including the bridge electrodes, patterning the insulation layer to form contact holes exposing both ends of the bridge electrodes, and forming X-axis electrode extending in a first direction between the contact holes spaced apart from and facing each other and Y-axis electrode cells filling the contact holes and formed in a second direction perpendicular to the first direction. The bridge electrodes, the X-axis electrodes, and the Y-axis electrode cells are formed as hybrid electrodes, respectively. | 10-10-2013 |
20140008650 | THIN FILM TRANSISTOR AND METHOD OF FABRICATING THE SAME - Provided are a thin film transistor in which an oxide semiconductor combined with a nitride containing boron or aluminum is applied to a channel layer and a method of fabricating the same. The thin film transistor in which an oxide semiconductor combined with a nitride containing boron or aluminum is applied to a channel layer exhibits significantly improved mobility and increased stability at a high temperature. | 01-09-2014 |
20140015771 | TOUCH SCREEN PANELS AND METHODS OF FABRICATING THE SAME - Provided are touch screen panels with improved transmittance and methods of fabricating the same. the method may include preparing a substrate including a cell region and an interconnection region provided around the cell region, sequentially forming a first buffer layer and a second buffer layer on the substrate, the second buffer layer having a refractive index less than that of the first buffer layer, and forming a transparent electrode on the second buffer layer. The second buffer layer is formed of a SiOC material. | 01-16-2014 |
20140327841 | TOUCH SCREEN PANEL AND DISPLAY INCLUDING THE SAME - Provided is a touch screen panel. The touch screen panel according to an embodiment of the inventive concept includes a transparent substrate including a first region and a second region, a buffer layer disposed on the first region and second region, the buffer layer having a first transmittances, and a transparent indium tin oxide (ITO) electrode disposed on the buffer layer of the second region, the transparent ITO electrode and the buffer layer on the second region having a second transmittance, wherein a thickness of the transparent ITO electrode is 100 nm to 500 nm, and a difference between the first transmittance and the second transmittance is less than 1.5%. | 11-06-2014 |