Patent application number | Description | Published |
20100035785 | AQUEOUS CLEANING COMPOSITION CONTAINING COPPER-SPECIFIC CORROSION INHIBITOR FOR CLEANING INORGANIC RESIDUES ON SEMICONDUCTOR SUBSTRATE - A semiconductor wafer cleaning formulation, including 1-35% wt. fluoride source, 20-60% wt. organic amine(s), 0.1-40% wt. nitrogenous component, e.g., a nitrogen-containing carboxylic acid or an imine, 20-50% wt. water, and 0-21% wt. metal chelating agent(s). The formulations are useful to remove residue from wafers following a resist plasma ashing step, such as inorganic residue from semiconductor wafers containing delicate copper interconnecting structures. | 02-11-2010 |
20110104875 | SELECTIVE SILICON ETCH PROCESS - A process for etching a silicon layer disposed on a substrate, including anisotropically etching a first trench in the silicon layer; selectively anisotropic wet etching silicon surfaces in the first trench, the wet etching comprising exposing the silicon surfaces to an aqueous composition including an aromatic tri(lower)alkyl quaternary onium hydroxide, and an unsymmetrical tetraalkyl quaternary phosphonium salt; in which the wet etching etches (110) and (100) planes of the silicon layer at about equal rates and preferentially to the (111) plane to form an enlarged trench having a sidewall in the (111) plane. A silicon alloy may be epitaxially deposited in the thus-produced trench as part of a process of introducing stress into at least a portion of the silicon layer. | 05-05-2011 |
20120231632 | Novel Etching Composition - This disclosure relates to an etching composition containing at least one sulfonic acid, at least one compound containing a halide anion, the halide being chloride or bromide, at least one compound containing a nitrate or nitrosyl ion, and water. The at least one sulfonic acid can be from about 25% by weight to about 95% by weight of the composition. The halide anion can be chloride or bromide, and can be from about 0.01% by weight to about 0.5% by weight of the composition. The nitrate or nitrosyl ion can be from about 0.1% by weight to about 20% by weight of the composition. The water can be at least about 3% by weight of the composition. | 09-13-2012 |
20130072411 | AQUEOUS CLEANING COMPOSITION CONTAINING COPPER-SPECIFIC CORROSION INHIBITOR FOR CLEANING INORGANIC RESIDUES ON SEMICONDUCTOR SUBSTRATE - A semiconductor wafer cleaning formulation, including 1-35% wt. fluoride source, 20-60% wt. organic amine(s), 0.1-40% wt. nitrogenous component, e.g., a nitrogen-containing carboxylic acid or an imine, 20-50% wt. water, and 0-21% wt. metal chelating agent(s). The formulations are useful to remove residue from wafers following a resist plasma ashing step, such as inorganic residue from semiconductor wafers containing delicate copper interconnecting structures. | 03-21-2013 |
20130122701 | Novel Passivation Composition and Process - This disclosure relates to a passivation composition containing at least one sulfonic acid, at least one compound containing a nitrate or nitrosyl ion, and water. The passivation composition is substantially free of a halide ion. | 05-16-2013 |
20140120734 | Novel Etching Composition - This disclosure relates to a method for manufacturing a semiconductor device. The method includes etching a metal film on a semiconductor substrate with an etching composition; and rinsing the etched metal film with a rinse solvent. The etching composition includes at least one acid; at least one compound containing a halide anion, the halide anion being chloride or bromide; at least one compound containing a nitrate or nitrosyl ion; and water. | 05-01-2014 |
20150159124 | CLEANING FORMULATION FOR REMOVING RESIDUES ON SURFACES - This disclosure relates to a cleaning composition that contains 1) at least one redox agent; 2) at least one first chelating agent, the first chelating agent being a polyaminopolycarboxylic acid; 3) at least one second chelating agent different from the first chelating agent, the second chelating agent containing at least two nitrogen-containing groups; 4) at least one metal corrosion inhibitor, the metal corrosion inhibitor being a substituted or unsubstituted benzotriazole; 5) at least one organic solvent selected from the group consisting of water soluble alcohols, water soluble ketones, water soluble esters, and water soluble ethers; 6) water; and 7) optionally, at least one pH adjusting agent, the pH adjusting agent being a base free of a metal ion. This disclosure also relates to a method of using the above composition for cleaning a semiconductor substrate. | 06-11-2015 |